Thomas C. Mcgill
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Thomas C. Mcgillengineering Degrees
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Materials Science
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Applied Physics
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Engineering Physics
Thomas C. Mcgill's Degrees
- PhD Electrical Engineering Stanford University
- Masters Physics University of California, Berkeley
- Bachelors Physics University of California, Berkeley
Why Is Thomas C. Mcgill Influential?
(Suggest an Edit or Addition)Thomas C. Mcgill's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes (1991) (733)
- Lattice match: An application to heteroepitaxy (1984) (276)
- Energy spectra of donors in GaAs − Ga 1 − x Al x As quantum well structures in the effective-mass approximation (1982) (224)
- New negative differential resistance device based on resonant interband tunneling (1989) (223)
- The CdTe/HgTe superlattice: Proposal for a new infrared material (1979) (208)
- Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity (1976) (188)
- Advantages of the HgTe‐CdTe superlattice as an infrared detector material (1983) (156)
- High voltage (450 V) GaN Schottky rectifiers (1999) (150)
- Minority carrier diffusion length and lifetime in GaN (1998) (134)
- Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy (2001) (126)
- Fundamental Transition in the Electronic Nature of Solids (1969) (122)
- Fermi-level position at a semiconductor-metal interface (1983) (113)
- Band Offsets in Semiconductor Heterojunctions (1992) (111)
- Variation of impurity−to−band activation energies with impurity density (1975) (105)
- Electron diffusion length and lifetime in p-type GaN (1998) (103)
- Electronic properties of the AlAs-GaAs (001) interface and superlattice (1979) (85)
- Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy (1999) (83)
- Infrared optical characterization of InAs/Ga1−xInxSb superlattices (1990) (77)
- Transition‐metal silicides lattice‐matched to silicon (1985) (70)
- Inverted base‐collector tunnel transistors (1985) (68)
- Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices (1990) (67)
- Oxidation of silicon surfaces (1981) (67)
- Strain relaxation kinetics in Si1–xGex/Si heterostructures (1989) (65)
- Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation (1978) (64)
- Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes (1991) (62)
- The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices (2000) (61)
- Schottky barriers on compound semiconductors: The role of the anion (1976) (58)
- Diffraction of Gaussian Laser Beams by a Semi-Infinite Plane (1969) (58)
- Type II superlattices for infrared detectors and devices (1991) (57)
- The Tunneling Time of an Electron (1967) (56)
- n‐CdSe/p‐ZnTe based wide band‐gap light emitters: Numerical simulation and design (1993) (56)
- Electron Tunneling Time Measured by Photoluminescence Excitation Correlation Spectroscopy (1989) (56)
- Schottky-based band lineups for refractory semiconductors (1995) (56)
- Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface (1995) (55)
- Temperature dependence of the electron-hole-liquid luminescence in Si (1976) (54)
- Photoluminescence studies of ZnTe‐CdTe strained‐layer superlattices (1986) (53)
- ELECTRONIC STRUCTURE OF GAN STACKING FAULTS (1997) (53)
- Carrier lifetimes in ion‐damaged GaAs (1989) (53)
- Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region (1969) (53)
- Reconstruction of the (110) surface of III–V semiconductor compounds☆ (1981) (52)
- Nature of the 0.111‐eV acceptor level in indium‐doped silicon (1979) (52)
- Luminescence from HgCdTe alloys (1981) (52)
- Two‐band modeling of narrow band gap and interband tunneling devices (1990) (51)
- The peroxy radical model for the chemisorption of O2 onto silicon surfaces (1976) (51)
- Resonant tunneling transistors with controllable negative differential resistances (1985) (50)
- Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy (1998) (49)
- Electric field dependence of GaAs Schottky barriers (1968) (48)
- Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy (1999) (47)
- Optical Reflection Studies of Damage in Ion Implanted Silicon (1970) (47)
- Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition (1985) (47)
- Reconstruction and oxidation of the GaAs(110) surface (1979) (47)
- Experimental realization of a resonant tunneling transistor (1987) (45)
- Schottky barrier heights on p-type diamond and silicon carbide (6h) (1976) (45)
- Observation of negative differential resistance from a single barrier heterostructure (1988) (45)
- Observation of long lifetime lines in photoluminescence from Si: In (1979) (45)
- Study of interface asymmetry in InAs–GaSb heterojunctions (1995) (44)
- Complex band structure and superlattice electronic states (1981) (44)
- Ab initioeffective potentials for silicon (1977) (43)
- InAs/AlSb double-barrier structure with large peak-to-valley current ratio: a candidate for high-frequency microwave devices (1990) (42)
- Prospects for the future of narrow bandgap materials (1993) (42)
- Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe (1989) (42)
- Charge transfer in overlapping gate charge-coupled devices (1973) (42)
- Measurement of the valence‐band offset in strained Si/Ge (100) heterojunctions by x‐ray photoelectron spectroscopy (1990) (41)
- Photoluminescence of Si-rich Si-Ge alloys (1982) (41)
- Short-Range Order and Pseudogaps in Elemental Amorphous Covalent Semiconductors (1972) (41)
- X‐ray photoelectron spectroscopy measurement of valence‐band offsets for Mg‐based semiconductor compounds (1994) (40)
- Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds (1980) (40)
- Neutral impurity scattering in semiconductors (1975) (40)
- Demonstration of large peak‐to‐valley current ratios in InAs/AlGaSb/InAs single‐barrier heterostructures (1989) (39)
- Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors (1989) (38)
- Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor (1987) (38)
- Schottky barrier height measurements of epitaxial NiSi2 on Si (1985) (38)
- Phenomenology of metal-semiconductor electrical barriers (1974) (37)
- Large peak current densities in novel resonant interband tunneling heterostructures (1990) (36)
- Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100) (1990) (36)
- Study of surfaces and interfaces using quantum chemistry techniques (1979) (36)
- Ohmic contacts to n‐type GaAs (1985) (36)
- Infrared absorption in ionic insulators due to multiphonon processes (1973) (35)
- Experimental observation of negative differential resistance from an InAs/GaSb interface (1990) (35)
- Impact ionization of excitons in Ge and Si (1975) (34)
- Negative differential resistances from Hg1−xCdxTe‐CdTe single quantum barrier heterostructures (1986) (34)
- EFFICIENT, NUMERICALLY STABLE MULTIBAND K.P TREATMENT OF QUANTUM TRANSPORTIN SEMICONDUCTOR HETEROSTRUCTURES (1996) (34)
- Role of heavy‐hole states in interband tunnel structures (1991) (33)
- Modeling of novel heterojunction tunnel structures (1990) (33)
- Infrared photoluminescence spectra from HgTe‐CdTe superlattices (1985) (33)
- Platinum diffusion into silicon from PtSi (1983) (33)
- Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices (1988) (33)
- Monte Carlo simulation of light-emitting diode light-extraction characteristics (1995) (33)
- Chemisorption of Al and Ga on the GaAs (110) surface (1980) (33)
- Measurement of the CdSe/ZnTe valence band offset by x‐ray photoelectron spectroscopy (1991) (32)
- Observation of resonant tunneling through GaAs quantum well states confined by AlAs X‐point barriers (1987) (32)
- Mott insulator model of the Si(111)–(2×1) surface (1982) (32)
- Bound-exciton absorption in Si:Al, Si:Ga, and Si:In (1978) (32)
- Scanning tunneling microscopy of InAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry (1994) (31)
- Numerical spurious solutions in the effective mass approximation (2003) (31)
- Binding of an exciton to a neutral acceptor (1976) (31)
- Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors (1992) (31)
- Electronic band structure of far-infrared Ga1-xInxSb/InAs superlattices (1993) (31)
- Direct interelectrode tunneling in GaSe (1971) (31)
- Description of bulk inversion asymmetry in the effective-bond-orbital model (2003) (30)
- The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices (1973) (30)
- Surface vacancies in II–VI and III–V zinc blende semiconductors (1981) (30)
- Picosecond time‐resolved photoluminescence using picosecond excitation correlation spectroscopy (1988) (29)
- Strain effects in HgTe‐CdTe superlattices grown on CdTe substrates (1985) (29)
- Correlation between the surface defect distribution and minority carrier transport properties in GaN (1998) (29)
- Fabrication of GaN suspended microstructures (2001) (29)
- Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices (1990) (28)
- Observation of large peak‐to‐valley current ratios and large peak current densities in AlSb/InAs/AlSb double‐barrier tunnel structures (1989) (27)
- Hole tunneling times in GaAs/AlAs double‐barrier structures (1989) (27)
- Growth of InAs/Ga1-xInxSb infrared superlattices (1991) (26)
- Solid phase recrystallization of ZnS thin films on sapphire (1998) (25)
- Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates (1995) (25)
- Semiempirical calculation of deep levels: divacancy in Si (1973) (25)
- Piezoelectric fields in nitride devices (1999) (25)
- Inelastic tunneling characteristics of AlAs/GaAs heterojunctions (1984) (25)
- X‐ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface (1993) (25)
- Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire (1999) (25)
- Near‐band‐gap photoluminescence of Hg1−xCdxTe (1980) (25)
- Luminescence studies of HgCdTe alloys (1982) (25)
- III‐V/II‐VI double‐barrier resonant tunneling structures (1988) (25)
- Temperature dependence of silicon luminescence due to splitting of the indirect ground state (1975) (24)
- InAs/Ga1−xInxSb strained‐layer superlattices grown by molecular‐beam epitaxy (1990) (24)
- Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes (2003) (24)
- Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride (1976) (23)
- Evidence of segregation in (100) strained Si1−xGex alloys grown at low temperature by molecular beam epitaxy (1990) (23)
- Deposition of Ga2O3–x ultrathin films on GaAs by e-beam evaporation (2002) (23)
- Electronic properties of deep levels in p‐type CdTe (1983) (23)
- Selective excitation luminescence in bulk‐grown GaAs (1982) (23)
- Bound exciton lifetimes for acceptors in Si (1977) (22)
- Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode (2000) (22)
- Structure of CdTe/ZnTe superlattices (1987) (22)
- Energy gaps in amorphous covalent semiconductors (1970) (22)
- P-TYPE DOPING OF GALLIUM ANTIMONIDE GROWN BY MOLECULAR BEAM EPITAXY USING SILICON (1990) (21)
- Chemisorption of oxygen and aluminum on the GaAs (110) surface from ab initio theory (1980) (21)
- GaN Schottky diodes for piezoelectric strain sensing (2003) (21)
- A feedforward artificial neural network based on quantum effect vector-matrix multipliers (1993) (21)
- Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures (1996) (20)
- Investigation of tellurium−implanted silicon (1975) (20)
- Energy-band diagrams and current-voltage characteristics of single-barrier tunnel structures (1987) (19)
- Edge luminescence spectra of acceptors in Si: Implications for multiexciton complexes (1978) (19)
- Final stage of the charge-transfer process in charge-coupled devices (1974) (19)
- A DLTS study of deep levels in n‐type CdTe (1982) (19)
- Band offsets, defects, and dipole layers in semiconductor heterojunctions (1984) (19)
- Interface roughness effects in resonant tunneling structures (1994) (19)
- Superlattices: Progress and prospects (1986) (18)
- Ideal CdTe/HgTe superlattices (1979) (18)
- Nitride based high power devices: design and fabrication issues (1998) (18)
- An efficient multiband envelope function approximation method for spintronics (2003) (18)
- Sb‐surfactant‐mediated growth of Si/Si1−yCy superlattices by molecular‐beam epitaxy (1995) (18)
- Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection (2003) (18)
- New approach to the k⋅ p theory of semiconductor superlattices (1984) (18)
- Infrared absorption measurement and analysis of HgTe–CdTe superlattices (1986) (18)
- Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress (1997) (17)
- Transport characteristics of L‐point and Γ‐point electrons through GaAs–Ga1−xAlxAs–GaAs(111) double heterojunctions (1983) (17)
- Effect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset (1995) (17)
- Resistance fluctuations in ohmic contacts due to discreteness of dopants (1986) (17)
- Magnetotunneling in interband tunnel structures (1997) (17)
- Overlapping-gate buried-channel charge-coupled devices (1973) (17)
- Relaxation of (111) silicon surface atoms from studies of Si4H9 clusters (1976) (17)
- Intersubband absorption in Si1–xGex/Si superlattices for long wavelength infrared detectors (1990) (16)
- The Metal-Semiconductor Interface (1980) (16)
- Bulk vacancies in CdxHg1-xTe (1982) (16)
- Superlattices of II VI semiconductors (1987) (15)
- Model Hamiltonian of donors in indirect-gap materials (1981) (15)
- High-frequency resonant-tunneling oscillators (1991) (15)
- Auger lifetimes in ideal InGaSb/InAs superlattices (1993) (14)
- Electrical determination of the valence‐band discontinuity in HgTe‐CdTe heterojunctions (1987) (14)
- Raman scattering determination of strain in CdTe/ZnTe superlattices (1989) (14)
- HgSe, a highly electronegative stable metallic contact for semiconductor devices (1976) (14)
- Applications of resonant-tunneling field-effect transistors (1988) (14)
- Band Structure of AlAs-GaAs(100) Superlattices (1977) (14)
- Observation of nanometer-scale optical property discrimination by use of a near-field scanning apertureless microscope. (1999) (14)
- Tunneling and propagating transport in GaAs–Ga1−xAlxAs–GaAs(100) double heterojunctions (1983) (14)
- Eddy‐Current‐Limited Domain‐Wall Motion in Thin Ferromagnetic Films (1966) (14)
- Equivalence of the Langevin method and the impedance-field method of calculating noise in devices (1974) (14)
- Breit-Wigner-Fano resonances in the photoconductivity of semiconductors: Experiment (1983) (14)
- Temperature dependence of the relative integrated intensities of symmetry-allowed phonon-assisted exciton emission in Si and Ge (1976) (14)
- Tunneling Currents and the E-k Relation (1970) (13)
- Effect of cylindrical geometry on the wet thermal oxidation of AlAs (1998) (13)
- Rashba effect resonant tunneling spin filters (2003) (13)
- Schottky barrier height measurements of type‐A and type‐B NiSi2 epilayers on Si (1986) (12)
- Band alignment of Zn1-xCdxTe/ZnTe and ZnTe1-xSex/ZnTe strained layer superlattices (1990) (12)
- Exciton capture cross sections of indium and boron impurities in silicon (1980) (12)
- Absorption and luminescence of the bound exciton in thallium doped silicon (1978) (12)
- Reflection high energy electron diffraction observation of anion exchange reactions on InAs surfaces (1994) (12)
- Proposal of a new visible light emitting structure - n-AlSb/p-ZnTe heterojunctions (1988) (12)
- Theoretical investigations of spin splittings in asymmetric AlSb/InAs/GaSb heterostructures and the possibility of electric field induced magnetization (2001) (12)
- Design And Fabrication Of Nitride Based High Power Devices (1997) (12)
- Band offset of the ZnSe/ZnTe superlattices: A fit to photoluminescence data by k.p theory (1988) (12)
- Mbe-Growth of InAs and GaSb Epitaxial Layers on GaAs Substrates (1989) (12)
- Geometry of the abrupt (110) Ge/GaAs interface (1981) (12)
- Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment (1999) (12)
- Selective excitation luminescence and electronic Raman scattering study of the 78‐meV acceptor in GaAs (1984) (11)
- Current transport mechanisms in GaAs/AlAs tunnel structures grown by metal–organic chemical vapor deposition (1986) (11)
- Defect Reactions in GaP: (Zn,O) (1981) (11)
- Isotope shifts for the P, Q, R lines in indium-doped silicon (1983) (11)
- Growth and characterization of light emitting ZnS/GaN heterostructures (1997) (11)
- Role of short-range order in producing an energy gap in amorphous covalent semiconductors (1970) (11)
- The Mott insulator model of the Si(111)-(2 × 1) surface (1983) (11)
- Strain in wet thermally oxidized square and circular mesas (2000) (10)
- Determination of relative impurity concentrations using photoluminescence: A case study of the Si: (B,In) system (1980) (10)
- Thermodynamic Determination of Work Functions of Bound Multiexciton Complexes (1978) (10)
- Observation of a (2×8) surface reconstruction on Si1−xGex alloys grown on (100) Si by molecular‐beam epitaxy (1991) (10)
- Vibrational modes of oxygen in GaP including second-nearest-neighbor interactions (1983) (10)
- Structure of the Langevin and impedance-field methods of calculating noise in devices (1974) (10)
- k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field (1989) (10)
- Role of Fe in new luminescence lines in Si:T1 and Si:In (1982) (10)
- Spin-excitation spectra and resistance minima in amorphous ferromagnetic alloys (1974) (10)
- Core to surface excitations on GaAs(110) (1981) (10)
- Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy (1997) (10)
- Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions (1994) (10)
- Interface roughness effects on transport in tunnel structures (1996) (10)
- Capture cross section of excitons on neutral indium impurities in silicon (1977) (10)
- Reflection high energy electron diffraction observation of exchange reaction dynamics on InAs surfaces (1994) (9)
- Concentration broadening of bound-exciton spectral lines (1980) (9)
- A transistorless-current-mode static RAM architecture (1998) (9)
- Energy spectra of donors in GaAs-Ga1−xAlxAs quantum well structures (1982) (9)
- Interband tunneling in InAs/GaSb/AlSb heterostructures (1991) (9)
- Resonant tunneling field-effect transistors (1988) (9)
- OPTICAL PROPERTIES OF HgTe-CdTe SUPERLATTICES (1985) (9)
- Temperature dependence of multiphonon absorption in ionic insulators (1973) (9)
- Critical analysis of the 'generalized coherent wave approximation' (1970) (9)
- Large peak-to-valley current ratios in triple barrier heterostructures (1989) (9)
- Capacitance‐voltage characteristics of GaAs‐AlAs heterostructures (1985) (9)
- Three‐dimensional simulations of quantum transport in semiconductor nanostructures (1993) (9)
- Contact‐Limited Currents in Metal‐Insulator‐Metal Structures (1970) (9)
- Energy spectra of donors in GaAs–Ga1−xAlxAs quantum well structures in the effective mass approximation (1982) (9)
- Excitons in II-VI heterostructures (1992) (8)
- Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures (2002) (8)
- Structural perfection in poorly lattice matched heterostructures (1989) (8)
- Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain (1999) (8)
- Damping of electron-hole-droplet motion. I. Deformation potential scattering (1978) (8)
- Isotope-shift experiments on luminescence attributed to (Fe,B) pairs in silicon (1983) (8)
- Negative differential resistance due to resonant interband tunneling of holes (1990) (8)
- Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi 2 on Si (1985) (8)
- Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface (1983) (8)
- Uniformity in the electrical characteristics of GaAs/AlAs tunnel structures grown by metalorganic chemical vapor deposition (1985) (8)
- Surface morphology of silicon grown on CaF2/Si by electron‐beam‐assisted molecular‐beam epitaxy (1994) (7)
- Characterization of CdSe/ZnTe heterojunctions (1991) (7)
- Band structure effects in interband tunnel devices (1991) (7)
- Fluctuations in the transmission properties of a quantum dot with interface roughness and impurities (1994) (7)
- Electronic structure of steps on silicon (111) surfaces from theoretical studies of finite clusters (1981) (7)
- Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon (1978) (7)
- Charge transfer in charge-coupled devices (1972) (7)
- Theory of donor states in GaP: The role of the camel's back☆ (1980) (7)
- Electrical interface barriers (1974) (7)
- Reaction kinetics in GaP:(Zn,O) (1982) (7)
- Measurement of the MgSe/Cd0.54Zn0.46Se valence band offset by X-ray photoelectron spectroscopy (1994) (7)
- Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures (1994) (7)
- Dependence of the I-V curve of a metal insulator semiconductor switch on insulator thickness-an experimental and theoretical investigation (1998) (7)
- Push clocks: a new approach to charge‐coupled devices clocking (1973) (7)
- RELAXATION OF COHERENT STRAIN IN Si1 − xGex/Si SUPERLATTICES AND ALLOYS (1989) (6)
- Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers (1999) (6)
- MAPPING OF ALXGA1-XAS BAND EDGES BY BALLISTIC ELECTRON EMISSION SPECTROSCOPY (1997) (6)
- Extracting discontinuities in early vision with networks of resonant tunneling diodes (1992) (6)
- Excited states of donor bound excitons in GaP (1980) (6)
- Interface Roughness Effects in Ultra-Thin Tunneling Oxides (1998) (6)
- Ground state energies of bound exciton for all mass ratios (1979) (6)
- Transient decay of satellite lines of bound excitons in Si: P (1979) (6)
- Tight‐binding calculation for the AlAs–GaAs (100) interface (1978) (6)
- Luminescence of bound exciton and bound multiexciton complexes in Si:Li (1978) (5)
- Effect of Γ-X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures (1992) (5)
- Theory ofD−states in Ge and Si (1982) (5)
- Low-temperature photoluminescence spectra of doped Ge (1977) (5)
- Band offsets and the optical properties of HgTe‐CdTe superlattices (1985) (5)
- Condensation of injected electrons and holes in silicon (1974) (5)
- Theory of fine-structure splittings for donor-bound excitons in indirect materials (1982) (5)
- Si‐Si1−xGex n‐type resonant tunnel structures (1989) (5)
- Advances in the development of graded injector visible light emitters (1994) (5)
- Accommodation of lattice mismatch in GexSi1−x/Si superlattices (1988) (5)
- Photovoltaic investigations of GaAs/AlAs heterostructures (1984) (5)
- Model calculations for n-CdZnS light emitter grown on p-GaN hole injector (1996) (5)
- Compositionally Dependent Band Offsets In Aln/Al x Ga 1-x N Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy (1997) (5)
- Growth of superconducting V3Si on Si by molecular beam epitaxial techniques (1988) (5)
- Electrical studies of single‐barrier Hg1−xCdxTe heterostructures (1988) (5)
- Investigation of crystal quality and surface morphology of ZnTe:N epilayers grown on ZnTe and GaSb substrates (1994) (5)
- Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals (1998) (5)
- Experimental investigation of the infrared absorption saturation in p‐type germanium and silicon (1982) (5)
- Scale dependence of resistance fluctuations at metal‐semiconductor junctions (1988) (4)
- Kinetics of Nitrogen in GaAsN Layers During GaAs Overgrowth (1996) (4)
- Charge transfer in buried-channel charge-coupled devices (1974) (4)
- Auger and radiative recombination of acceptor bound excitons in semiconductors (1978) (4)
- Self-consistent solutions of electronic wave functions at GaAs–AlxGa1–xAs interfaces (1987) (4)
- Ionic model for the linear electro-optic effect☆ (1967) (4)
- Experimental Study of Sputter Deposited Contacts to Gallium Nitride (1997) (4)
- Electrical behavior of GaAs–AlAs heterostructures (1986) (4)
- Novel InAs/GaSb/AlSb tunnel structures (1990) (4)
- XPS Study of Oxygen Adsorption on (3×3) Reconstructed MBE Grown Gan Surfaces (1999) (4)
- Experimental observation of large room‐temperature current gains in a Stark effect transistor (1991) (4)
- Evidence for an excited level of the neutral indium acceptor in silicon (1979) (4)
- Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer (2000) (4)
- Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE (1998) (4)
- Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy (2004) (4)
- Breit-Wigner-Fano resonances in the photoconductivity of semiconductors: theory (1983) (4)
- Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling (1996) (4)
- Interfaces and Devices (1985) (4)
- Excitation Spectra of Bound Excitons and Bound Multiexciton Complexes in n -Type Si (1980) (4)
- Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers* (1998) (4)
- Real-time extraction of growth rates from rotating substrates during molecular-beam epitaxy (1995) (4)
- Characterization and Analysis of Indium-Doped Silicon Extrinsic Detector Material (1980) (3)
- Tunnel switch diode based on AlSb/GaSb heterojunctions (2000) (3)
- Characterization of Si/Si1−yCy superlattices grown by surfactant assisted molecular beam epitaxy (1996) (3)
- Valley-orbit splittings for the donor states in GaP (1981) (3)
- Transients of the photoluminescence intensities of the electron-hole droplets in pure and doped Ge (1978) (3)
- Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm (1995) (3)
- Superlattice k⋅p models for calculating electronic structure (1988) (3)
- X‐point tunneling in AlAs–GaAs–AlAs double barrier heterostructures (1989) (3)
- Theoretical investigation of the effect of strain on phase separation in epitaxial layers (1985) (3)
- Properties of the electron–hole liquid luminescence in si double injection diodes (1976) (3)
- Summary Abstract: Surface core excitons in III–V semiconductors (1981) (3)
- Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy (1997) (3)
- X-point tunneling in AlAs/GaAs double barrier heterostructures (1989) (3)
- Evanescent states and the CdTe/HgTe superlattice (1980) (3)
- Growth of Iii-Nitrides by Rf-Assisted Molecular Beam Epitaxy (1998) (3)
- Tunneling spectroscopy of resonant interband tunneling structures (1997) (3)
- Theoretical study of the electronic properties of semimagnetic superlattices (1986) (3)
- Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes (1998) (2)
- Electric field assisted doping of semiconductors during epitaxial growth (1991) (2)
- Experimental and theoretical study of ultra-thin oxides (1998) (2)
- Optical investigations of electron transport through GaAs/AlAs heterostructures (1985) (2)
- Dipoles, defects and interfaces (1983) (2)
- XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces (1998) (2)
- InAs/Ga1-xInxSb superlattices for infrared applications (1990) (2)
- Space‐ and time‐resolved photoluminescence of In‐alloyed GaAs using photoluminescence excitation correlation spectroscopy (1989) (2)
- Nickel layers on indium arsenide (2000) (2)
- Proposal for the formation of a minority carrier injecting contact on wide bandgap semiconductors (1992) (2)
- Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures (2002) (2)
- Properties of the electron-hole condensate in Ge double-injection diodes. I (1976) (2)
- Exciton effects on intervalence band transitions in excited Ge (1976) (2)
- Ratio of TO- to LA-phonon assisted luminescence intensities from the exciton and electron-hole condensate in Ge (1976) (2)
- Tunneling Spectroscopy of Single-Crystal CoSi 2 and NiSi 2 Epilayers on n-type Si (1986) (2)
- Strain effects and optical properties of Si1−xGex/Si superlattices (1989) (2)
- Theory of Multiphonon Absorption: A Review (1975) (2)
- Development and Application of Heterojunctions for Nanoelectronics for Silicon (2002) (2)
- InAs/GaSb/AlSb: The Material System of Choice for Novel Tunneling Devices (1991) (2)
- Summary Abstract: Band offsets at HgTe CdTe interfaces (1985) (2)
- Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures (1998) (2)
- Bulk Inversion Asymmetry effects on the band structure of zincblende heterostructures in an 8-band Effective Mass Approximation model (2002) (2)
- Summary Abstract: Elastic and inelastic tunneling characteristics of AlAs/GaAs heterojunctions (1984) (2)
- Phonon damping of the electron-hole droplet motion (1977) (2)
- Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si (1986) (2)
- Photoresponse of GaAs/AlAs heterostructures under external bias (1985) (2)
- Damping of electron-hole-droplet motion. II. Impurity and piezoelectric scattering (1978) (2)
- Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems" (1992) (2)
- Multiband and Multidimensional Analysis of Quantum Transport in Ultrasubmicron Devices (1995) (2)
- Low lying excited states of the bound exciton in a spherical model (1979) (1)
- Schottky barrier induced injecting contact on wide band gap semiconductors (1992) (1)
- Photoresponse of asymmetrically doped GaAs‐AlAs heterostructures under external bias (1986) (1)
- Statistical Fluctuations in Devices (1995) (1)
- Forming of Al-doped ZnTe epilayers grown by molecular beam epitaxy (1992) (1)
- Characterization of InAs/AlSb tunneling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode (2003) (1)
- Periodicity in the undulation spectra of GaP: N (1982) (1)
- Growth of ZnTe and ZnSexTe1-x epilayers and superlattices on GaSb (1990) (1)
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- A new approach to wide band gap visible-light emitters (1993) (1)
- The role of materials in the electronics world of 2012 A.D.: An update (1999) (1)
- Spin Injection from Ferromagnetic Metals into Gallium Nitride (2000) (1)
- Dissociation of (Zn,O) pairs in GaP (1983) (1)
- Nucleation and Growth of Gallium Nitride Films on Si and Sapphire Substrates Using Buffer Layers (1996) (1)
- Infrared photoluminescence spectra from HgTe-CdTe superlattices (1986) (1)
- Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field (1987) (1)
- Theory of multiexciton complexes bound to donors in multivalley semiconductors (1982) (1)
- Transients of the photoluminescence from EHD in doped and undoped Ge (1977) (1)
- Electron hole condensate radiation from Ge double injection devices between 1.5° and 4.2°☆ (1974) (1)
- HIGH-FREQUENCY OSCILLATORS BASED ON RESONANT TUNNELING (1991) (1)
- Space and Time Resolved Photoluminescence of Defects at Dislocations in In-Alloyed GaAs Substrate Material (1987) (1)
- HgTe-CdTe superlattice infrared detectors (1986) (1)
- Perspectives on Formation and Properties of Semiconductor Interfaces (1987) (1)
- Summary Abstract: Localization of superlattice electronic states and complex bulk band structures (1980) (1)
- Summary Abstract: Mott insulator model of the Si(111)‐(2×1) surface (1982) (1)
- Time and spatially resolved absorption at 3.4 μm in highly excited germanium (1978) (0)
- II-VI HETEROSTRUCTURES AND MULTI-QUANTUM WELLS (1989) (0)
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- Summary Abstract: Inelastic tunneling characteristics of AlAs/GaAs heterojunction barriers (1984) (0)
- Temperature Dependence of Surface Morphology of Silicon Grown on CaF2/Si by Electron Beam Assisted Mbe (1994) (0)
- Characterization of Si / Si 1 2 yCy superlattices grown by surfactant assisted molecular beam epitaxy * (1996) (0)
- Heterojunction Approaches to Light Emitters: The Role of Band Offsets (1990) (0)
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- Summary Abstract: HgTe–CdTe superlattices (1983) (0)
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- Experimental and Theoretical Studies of Radiative and Nonradiative Processes in Semiconductors. (1984) (0)
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- Erratum: “Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy” [Appl. Phys. Lett. 70, 3588 (1997)] (1998) (0)
- Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices (1992) (0)
- Erratum: Eddy‐Current‐Limited Domain‐Wall Motion in Thin Ferromagnetic Films (1966) (0)
- Multiphonon Absorption in the Alkaline Earth Fluorides (1975) (0)
- Transport analysis of filamentary dielectric breakdown model for metal-oxide-semiconductor tunnel structures (1998) (0)
- Modeling InAs/GaSb/AlSb interband tunnel structures (1991) (0)
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