Tae‐yeon Seong
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Physics
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(Suggest an Edit or Addition)Tae‐yeon Seong's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride. (2001) (476)
- Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films (2004) (295)
- Facile control of C₂H₅OH sensing characteristics by decorating discrete Ag nanoclusters on SnO₂ nanowire networks. (2011) (240)
- Superplastic deformation of defect-free Au nanowires via coherent twin propagation. (2011) (190)
- Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers (2000) (188)
- Electrochemical and structural properties of radio frequency sputtered cobalt oxide electrodes for thin-film supercapacitors (2001) (149)
- Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact (2010) (147)
- Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO (2005) (143)
- Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN (1999) (143)
- Enhanced ethanol sensing properties of TiO2 nanotube sensors (2012) (134)
- Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes (2005) (125)
- High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing (2005) (119)
- III-Nitride Based Light Emitting Diodes and Applications (2013) (119)
- Ohmic and degradation mechanisms of Ag contacts on p-type GaN (2005) (118)
- Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers (2000) (113)
- Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer (2003) (111)
- Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment (1999) (109)
- Fabrication of ZnO quantum dots embedded in an amorphous oxide layer (2004) (99)
- Structural dependence of mechanical properties of Si incorporated diamond-like carbon films deposited by RF plasma-assisted chemical vapour deposition (1997) (90)
- Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry (2007) (90)
- Mechanism for CuPt-type ordering in mixed III–V epitaxial layers (1994) (88)
- Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 (2001) (86)
- Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN (2003) (85)
- Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells (2001) (84)
- Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures. (2018) (80)
- Origin of size dependency in coherent-twin-propagation-mediated tensile deformation of noble metal nanowires. (2013) (78)
- Fiber-optic waveguide coupled surface plasmon resonance sensor. (2012) (76)
- Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency (2017) (72)
- Electrical and Structural Properties of Ti/Au Ohmic Contacts to n ZnO (2001) (71)
- Electrical characteristics of contacts to thin film N-polar n-type GaN (2008) (68)
- Schottky barrier characteristics of Pt contacts to n-type InGaN (2006) (68)
- Effect of a Mo back contact on Na diffusion in CIGS thin film solar cells (2013) (68)
- Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN (2000) (68)
- Optical analysis of the microstructure of a Mo back contact for Cu(In,Ga)Se2 solar cells and its effects on Mo film properties and Na diffusivity (2011) (67)
- Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN (2000) (66)
- Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO (2005) (66)
- Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures. (2008) (64)
- Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN (2000) (61)
- Electrical properties of CIGS/Mo junctions as a function of MoSe2 orientation and Na doping (2014) (61)
- Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots (2005) (61)
- Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition (2001) (59)
- Fabrication of high-density arrays of individually isolated nanocapacitors using anodic aluminum oxide templates and carbon nanotubes (2005) (59)
- Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition (2005) (59)
- Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni–Mg solid solution (2003) (59)
- Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes (2003) (58)
- Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering (2005) (58)
- All solid-state rechargeable thin-film microsupercapacitor fabricated with tungsten cosputtered ruthenium oxide electrodes (2003) (58)
- Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p-type electrodes (2005) (57)
- High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes (2007) (57)
- Highly transparent Ag∕SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes (2004) (56)
- Inductively coupled plasma reactive ion etching of ZnO using BCl 3 -based plasmas (2003) (56)
- TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes (2009) (56)
- Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes (2005) (55)
- Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process (2006) (54)
- Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching (2007) (53)
- Effects of annealing on the microstructures and mechanical properties of TiN/AlN nano-multilayer films prepared by ion-beam assisted deposition (2002) (52)
- Growth behavior of carbon nanotubes on Fe-deposited (001) Si substrates (2001) (51)
- Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better (1991) (51)
- Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films (2008) (50)
- Micro‐Light Emitting Diode: From Chips to Applications (2021) (49)
- The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films (2018) (49)
- Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer (2004) (48)
- Co(OH)2-combined carbon-nanotube array electrodes for high-performance micro-electrochemical capacitors (2008) (48)
- Metallization contacts to nonpolar a-plane n-type GaN (2008) (47)
- Naturally formed InxAl1−xAs/InyAl1−yAs vertical superlattices (1996) (47)
- Surfactant effects of dopants on ordering in GaInP (2000) (45)
- Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers (1994) (44)
- Atomic ordering in molecular beam epitaxial InAsySb1−y natural strained layer superlattices and homogeneous layers (1994) (43)
- Te doping of GaInP: Ordering and step structure (1999) (41)
- Effect of heat treatment on precipitation behaviour in a Cu-Ni-Si-P alloy (1986) (41)
- Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers (2007) (41)
- Electrochemical capacitors fabricated with carbon nanotubes grown within the pores of anodized aluminum oxide templates (2006) (41)
- Inductively-coupled-plasma reactive ion etching of ZnO using BCl3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO (2004) (40)
- The use of a surfactant (Sb) to induce triple period ordering in GaInP (2000) (40)
- Flexible ITO films with atomically flat surfaces for high performance flexible perovskite solar cells. (2018) (40)
- Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters (2012) (38)
- Growth and structural characterization of III–N–V semiconductor alloys (2002) (38)
- High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas (2003) (38)
- Measurements of current spreading length and design of GaN-based light emitting diodes (2007) (38)
- Optimized ITO/Ag/ITO multilayers as a current spreading layer to enhance the light output of ultraviolet light-emitting diodes (2019) (37)
- Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system (2009) (37)
- Growth of InAs/GaSb strained layer superlattices. I (1994) (37)
- Dependence of optical and electrical properties on Ag thickness in TiO2/Ag/TiO2 multilayer films for photovoltaic devices (2015) (36)
- Graphene–titania films by supersonic kinetic spraying for enhanced performance of dye-sensitized solar cells (2014) (35)
- Highly flexible ZnO/Ag/ZnO conducting electrode for organic photonic devices (2015) (35)
- Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution (2002) (34)
- Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters (2013) (33)
- Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes (2005) (32)
- One-pot fabrication of hollow SiO2 nanowires via an electrospinning technique (2011) (32)
- Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering (2009) (32)
- Control of the preferred orientations of Cu(In,Ga)Se2 films and the photovoltaic conversion efficiency using a surface‐functionalized molybdenum back contact (2014) (32)
- Epitaxial growth of Cr2O3 thin film on Al2O3 (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing (2010) (31)
- Formation of vanadium-based ohmic contacts to n-GaN (2003) (31)
- Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular‐beam epitaxial layers (1993) (31)
- Improved efficiency of dye-sensitized solar cells through fluorine-doped TiO2 blocking layer (2013) (31)
- Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films (2011) (31)
- Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnO (2002) (31)
- Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature (2016) (31)
- Formation and characterization of Cu–Si nanocomposite electrodes for rechargeable Li batteries (2006) (30)
- Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy (1998) (30)
- Effects of hydrogen implantation on the structural and electrical properties of nickel silicide (2002) (30)
- Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy (2000) (30)
- Preparation and characterization of electro-spun RuO2–Ag2O composite nanowires for electrochemical capacitors (2011) (30)
- Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p‐In0.15Ga0.85N∕p‐GaN layer (2007) (29)
- Low Resistance and High Reflectance Pt/Rh Contacts to p-Type GaN for GaN-Based Flip Chip Light-Emitting Diodes (2005) (29)
- Realization of highly transparent and low resistance TiO2/Ag/TiO2 conducting electrode for optoelectronic devices (2015) (29)
- Effect of Ag nanoparticle size on the plasmonic photocatalytic properties of TiO2 thin films (2011) (29)
- Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p -contacts (2008) (29)
- Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by metalorganic vapour phase epitaxy (1993) (28)
- Low-resistance Pt'Pd'Au ohmic contacts to p-type AlGaN (2004) (28)
- High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN (2003) (28)
- Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design (2007) (28)
- Thermally Stable and Low Resistance Re/Ti/Au Ohmic Contacts to n ZnO (2005) (28)
- Superhydrophilic Transparent Titania Films by Supersonic Aerosol Deposition (2013) (27)
- Single-crystalline rocksalt CdO layers grown on GaAs (001) substrates by metalorganic molecular-beam epitaxy (2001) (27)
- Step structure and ordering in Te-doped GaInP (1998) (26)
- Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit (2015) (26)
- Hydrogen in polycrystalline ZnO thin films (2010) (25)
- Effects of a SiO2 Capping Layer on the Electrical Properties and Morphology of Nickel Silicides (2002) (25)
- Aggregation-free process for functional CdSe/CdS core/shell quantum dots (2009) (25)
- Use of Sn-Si nanocomposite electrodes for Li rechargeable batteries. (2005) (25)
- Enhanced resolution of a surface plasmon resonance sensor detecting C-reactive protein via a bimetallic waveguide-coupled mode approach (2018) (25)
- Characteristics of RuO2–SnO2 nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors (2005) (25)
- Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing (2006) (25)
- High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells: a route towards more robust back contacts (2011) (25)
- Epitaxial ZnO growth and p‐type doping with MOMBE (2004) (25)
- Structural and optical properties of InGaN/GaN multiple quantum wells : The effect of the number of InGaN/GaN pairs (2000) (24)
- Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetron (2010) (24)
- Fabrication of a Thin Film Battery Using a Rapid-Thermal-Annealed LiNiO2 Cathode (2002) (24)
- Formation of nonalloyed low resistance Ni/Au ohmic contacts to p-type GaN using Au nanodots (2004) (24)
- Crystalline Ag Nanocluster-Incorporated RuO2 as an Electrode Material for Thin-Film Micropseudocapacitors (2008) (24)
- Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes (2005) (24)
- Interfacial Reaction of Ni/Pt/Au Contact Schemes to p‐Type GaN (1999) (24)
- GaNAs as Strain Compensating Layer for 1.55 µm Light Emission from InAs Quantum Dots (2003) (24)
- Characteristics of ZnO:Al thin films co-doped with hydrogen and fluorine (2010) (23)
- Effect of a Mo Interlayer on the Electrical and Structural Properties of Nickel Silicides (2003) (23)
- Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films (2016) (22)
- Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films (2010) (22)
- Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films (2010) (22)
- Zn ∕ Au Ohmic Contacts on n-Type ZnO Epitaxial Layers for Light-Emitting Devices (2005) (22)
- Ga Ordering and Electrical Conductivity in Nanotwin and Superlattice-Structured Ga-Doped ZnO (2012) (22)
- High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer. (2018) (21)
- High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer (2018) (21)
- Ultrahigh transparency of Ni/Au ohmic contacts to surface-treated p-type GaN (2000) (21)
- Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes (2010) (21)
- Electrochemical properties of the carbon-coated lithium vanadium oxide anode for lithium ion batteries (2011) (21)
- Oxidation behavior of TiN/AlN multilayer films prepared by ion beam-assisted deposition (2001) (21)
- Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice (2006) (21)
- Rapid thermal annealing effect on surface of LiNi1−xCoxO2 cathode film for thin-film microbattery (2002) (21)
- Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy (2000) (21)
- Sb enhancement of lateral superlattice formation in GaInP (2001) (21)
- Synthesis and characterization of NiO–Ta2O5 nanocomposite electrode for electrochromic devices (2005) (20)
- Study of the Electrical and Structural Characteristics of Al/Pt Ohmic Contacts on n-Type ZnO Epitaxial Layer (2004) (20)
- Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy (1999) (20)
- Microstructures and electrochemical properties of Pt-doped amorphous V2O5 cathode films for thin film microbatteries (2001) (20)
- GUIDED NANOSTRUCTURES USING ANODIZED ALUMINUM OXIDE TEMPLATES (2011) (19)
- Direct formation of nanocrystalline silicon by electron cyclotron resonance chemical vapor deposition (1997) (19)
- Growth of InAsGaSb strained layer superlattices. II (1995) (19)
- Plasmonic Au nanoparticles on 8 nm TiO2 nanotubes for enhanced photocatalytic water splitting (2013) (19)
- Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices (2015) (19)
- Three-dimensional nanostructured carbon nanotube array/PtRu nanoparticle electrodes for micro-fuel cells (2009) (19)
- Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth (2001) (18)
- Rapid thermal annealed WO3-doped In2O3 films for transparent electrodes in organic photovoltaics (2012) (18)
- Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes (2005) (18)
- ITO-free inverted organic solar cells fabricated with transparent and low resistance ZnO/Ag/ZnO multilayer electrode (2015) (18)
- Effect of different metal deposition methods on the growth behaviors of carbon nanotubes (2007) (18)
- Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers (1997) (18)
- Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode. (2012) (18)
- Structural study of amorphous vanadium oxide films for thin film microbattery (2003) (18)
- Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes (2015) (17)
- Buffer and anode-integrated WO3-doped In2O3 electrodes for PEDOT:PSS-free organic photovoltaics (2013) (17)
- Atomic Ordering and Alloy Clustering in MBE-Grown InAsy Sb1-y Epitaxial Layers (1989) (17)
- Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al omnidirectional reflectors (2008) (17)
- Optical, electrical, and structural properties of ZrON/Ag/ZrON multilayer transparent conductor for organic photovoltaics application (2013) (17)
- Formation of low resistance nonalloyed Ti/Au ohmic contacts to n-type ZnO by KrF excimer laser irradiation (2005) (17)
- Modified electrochromism of tungsten oxide via platinum nanophases (2006) (17)
- Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode (2015) (17)
- MICROSTRUCTURES OF GAN1-XPX LAYERS GROWN ON (0001)GAN SUBSTRATES BY GAS SOURCE MOLECULAR BEAM EPITAXY (1999) (17)
- Optical and Structural Studies of Phase Separation in InGaN Film Grown by MOCVD (1999) (17)
- Carrier transport mechanism of strained AlGaN/GaN Schottky contacts (2012) (17)
- Improvement of the Light Output Power of GaN-Based Vertical Light Emitting Diodes by a Current Blocking Layer (2010) (17)
- Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes (2019) (16)
- Effect of Zinc Acetate Concentration on Structural, Optical and Electrical Properties of ZnO Thin Films Deposited by Electrostatic Spray on an ITO Substrate (2012) (16)
- InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate. (2016) (16)
- Characteristics of rapid-thermal-annealed LiNi1−xCoxO2 cathode films for all-solid-state rechargeable thin film microbatteries (2004) (16)
- A study of stress-induced p/sup +//n salicided junction leakage failure and optimized process conditions for sub-0.15-/spl mu/m CMOS technology (2002) (16)
- Sputtering-deposited amorphous SrVOx-based memristor for use in neuromorphic computing (2020) (16)
- Highly self-assembled nanotubular aluminum oxide by hard anodization (2011) (16)
- Tuning Hydrophobicity with Honeycomb Surface Structure and Hydrophilicity with CF4 Plasma Etching for Aerosol‐Deposited Titania Films (2012) (15)
- Electrochromism of Sn-modified WO3 electrodes prepared from sol-gel method (2007) (15)
- Improved materials for MOVPE growth of GaSb and InSb (1993) (15)
- Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy (2001) (15)
- Effect of different sputtering gas mixtures on the structural, electrical, and optical properties of p-type NiO thin films (2013) (15)
- Effect of platinum co-sputtering on characteristics of amorphous vanadium oxide films (2002) (15)
- Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode (2015) (15)
- Quantum wells due to ordering in GaInP (1998) (15)
- Low-resistance and transparent ohmic contacts to p-type GaN using Zn–Ni solid solution/Au scheme (2004) (15)
- Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching. (2013) (15)
- Improved angular color uniformity and hydrothermal reliability of phosphor-converted white light-emitting diodes by using phosphor sedimentation. (2018) (15)
- Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p-type GaN (2006) (15)
- CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy (2002) (14)
- Possible Ohmic Mechanisms of Ag/Indium Tin Oxide p-Type Contacts for High-Brightness GaN -Based Light Emitting Diodes (2008) (14)
- In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes (2007) (14)
- Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN (2002) (14)
- Investigation of Fermi level pinning at semipolar (11-22) p-type GaN surfaces (2015) (14)
- Fabrication of monolithic polymer nanofluidic channels using nanowires as sacrificial templates (2010) (14)
- Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN (2014) (13)
- Co-sputtering growth and electro-oxidation properties of Pt–CuO nanocomposites for direct methanol thin film fuel cells (2009) (13)
- Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn–Ag interlayer (2007) (13)
- An Optically Flat Conductive Outcoupler Using Core/Shell Ag/ZnO Nanochurros. (2018) (13)
- Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB (2009) (13)
- Effect of an In layer on the thermal stability of Ag reflector for vertical GaN-based light-emitting diodes (2013) (13)
- Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN (2004) (13)
- Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip LEDs (2004) (13)
- Effect of Pt nanostructures on the electrochemical properties of Co3O4 electrodes for micro-electrochemical capacitors (2009) (13)
- Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers (2005) (13)
- Optimization of tunable guided-mode resonance filter based on refractive index modulation of graphene (2019) (13)
- Improvement of the ohmic characteristics of Pd contacts to p-type GaN using an Ag interlayer (2006) (13)
- Formation of Sb-Doped SnO2 p-Type Ohmic Contact for Near-UV GaN -Based LEDs by a CIO Interlayer (2007) (12)
- Formation mechanisms of low-resistance and thermally stable Pd∕Ni∕Pd∕Ru Ohmic contacts to Mg-doped Al0.15Ga0.85N (2007) (12)
- Low resistance and transparent Ni–La solid solution/Au ohmic contacts to p-type GaN (2004) (12)
- Effect of MnTiO3 surface treatment on the performance of dye-sensitized solar cells (2013) (12)
- Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy (2000) (12)
- Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode (2016) (12)
- Synthesis and characterization of Co3O4/RuO2 composite nanofibers fabricated by an electrospinning method (2011) (12)
- Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance (2012) (12)
- Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes (2017) (12)
- Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN (2004) (12)
- Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN (2004) (12)
- Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells (2013) (12)
- Effect of thermal annealing on the properties of ZnO thin films (2021) (12)
- High-Quality Cu-Ni Solid Solution/Ag Ohmic Contacts for Flip-Chip Light-Emitting Diodes (2004) (11)
- Reduction of Threading Dislocations in InGaN/GaN Double Heterostructure through the Introduction of Low-Temperature GaN Intermediate Layer (2002) (11)
- Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN (2006) (11)
- Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio (1997) (11)
- Effects of Oxygen Partial Pressure on the Electrical and Optical Properties of Pulsed-Laser-Deposited Sb-Doped SnO2 Films (2006) (11)
- Flexible and transparent TiO 2 /Ag/ITO multilayer electrodes on PET substrates for organic photonic devices (2015) (11)
- Recovery of dry etch‐induced damage of nano‐patterned GaN‐based light‐emitting diodes by rapid‐thermal‐annealing (2007) (11)
- Abnormal junction profile of silicided p/sup +//n shallow junctions: a leakage mechanism (2002) (11)
- Electrochemical and structural properties of MoO3–V2O5 nanocomposite thin film electrodes for lithium rechargeable batteries (2006) (11)
- Characteristics of Pt Schottky contacts on hydrogen peroxide-treated n-type ZnO(0001) layers (2006) (11)
- Transmission Electron Microscopy Study of Two‐Dimensional Dopant Profiling in Metal‐Oxide‐Semiconductor Field Effect Transistor Test Structures and Devices (2000) (11)
- Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors. (2013) (11)
- Thickness Effect of a Ge Interlayer on the Formation of Nickel Silicides (2007) (11)
- Transparent Sn-doped In2O3 electrodes with a nanoporous surface for enhancing the performance of perovskite solar cells (2019) (11)
- Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition (2006) (10)
- Characteristics of gradient-interface-structured ZnCdSSe quantum dots with modified interface and its application to quantum-dot-sensitized solar cells (2018) (10)
- Nano‐dot addition effect on the electrical properties of Ni contacts to p‐type GaN (2004) (10)
- Effect of Amine Additive for the Synthesis of Cadmium Selenide Quantum Dots in a Microreactor (2016) (10)
- Ultrafast chemical lithiation of single crystalline silicon nanowires: in situ characterization and first principles modeling (2015) (10)
- Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition (1999) (10)
- One-pot synthesis of gradient interface quaternary ZnCdSSe quantum dots (2017) (10)
- Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering (2009) (10)
- Studies of porous silicon field emitters (1995) (10)
- Highly transparent Nb-doped indium oxide electrodes for organic solar cells (2014) (9)
- Optimum condition for the growth of Pt–CeO2 nanocomposite electrodes for thin-film fuel cells (2009) (9)
- Microstructual study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers (1997) (9)
- Electrical and thermal stability of Ag ohmic contacts for GaN-based flip-chip light-emitting diodes by using an AgAl alloy capping layer (2007) (9)
- Correlation between the microstructures and the cycling performance of RuO2 electrodes for thin-film microsupercapacitors (2002) (9)
- Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes (2006) (9)
- Electrical and structural properties of Ti/W/Au ohmic contacts on n-type GaN (2004) (9)
- Pt Doping Mechanism of Vanadium Oxide Cathode Film Grown on ITO Glass for Thin Film Battery (2001) (9)
- Effects of Surface Treatment on the Electrical Properties of Ohmic Contacts to (In)GaN for High Performance Optical Devices (2002) (9)
- Fine Tuning of Colloidal CdSe Quantum Dot Photovoltaic Properties by Microfluidic Reactors (2016) (9)
- Pt-embedded MoO3 electrodes for rechargeable lithium batteries (2007) (8)
- Effects of Fe Film Thickness and Pretreatments on the Growth Behaviours of Carbon Nanotubes on Fe-doped (001) Si Substrates (2002) (8)
- Structural and optical properties of GaxIn1−xP layers grown by chemical beam epitaxy (1998) (8)
- High-Efficiency GaN-Based Light-Emitting Diodes Fabricated With Metallic Hybrid Reflectors (2008) (8)
- Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer (2009) (8)
- Diffuse diffracted features and ordered domain structures in GalnP layers grown by organometallic vapor phase epitaxy (1998) (8)
- Ag–Pd–Cu alloy reflector to improve the opto-electrical performance and electromigration resistance of near ultraviolet GaN-based light-emitting diode (2019) (8)
- Low Resistance and Thermally Stable Pt/Ru Ohmic Contacts to p‐Type GaN (2000) (8)
- Formation of low resistance Ti/Al-based ohmic contacts on (11–22) semipolar n-type GaN (2015) (8)
- Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy (2002) (8)
- Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry (2005) (8)
- Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes (2012) (8)
- GaN-based light-emitting diodes with Ni–Mg solid solution/Au p-type ohmic contact (2004) (7)
- Charge-discharge induced phase transformation of RuO2 electrode for thin film supercapacitor (2003) (7)
- ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices (2015) (7)
- Heteroepitaxial growth behavior of SrRuO3/SrTiO3(001) by pulsed laser deposition (2002) (7)
- Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer (2014) (7)
- Electrical and optical properties of point-contacted a-Si:H/c-Si heterojunction solar cells with patterned SiO2 at the interface (2007) (7)
- Structural properties of nickel silicided Si1−xGex(001) layers (2004) (7)
- Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer (2012) (7)
- Formation of High-Quality Ag-Based Ohmic Contact to p-Type GaN for UV LEDs Using a Tin-Zinc Oxide Interlayer (2005) (7)
- Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer (2015) (7)
- Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes. (2006) (7)
- Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices (2020) (7)
- Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN (2009) (7)
- Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN (2004) (7)
- Origin of dislocation-related photoluminescence bands in very thin silicon-germanium layers grown on silicon substrates (1997) (7)
- Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes (2005) (7)
- Heterostructures in GaInP grown using a change in Te doping (2000) (6)
- Reflective and Low-Resistance Zn∕Rh Contacts to p-Type GaN for Flip-Chip Light-Emitting Diodes (2005) (6)
- Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode (2017) (6)
- Ag/Ni/Ag Multilayer Reflector for GaN-Based Vertical Light-Emitting Diode (2013) (6)
- Nickel-silicidation process using hydrogen implantation (2004) (6)
- Improving output power performance of InGaN-based light-emitting diodes by employing step-down indium contents (2015) (6)
- Improvement of the electrochemical properties of SnO2 electrodes for lithium rechargeable battery using protective Ta2O5 thin films (2005) (6)
- Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy (2001) (6)
- Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors (2021) (6)
- Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN (2005) (6)
- Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes (2021) (6)
- Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes (2009) (6)
- Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes. (2017) (6)
- Ordering and Associated Domain Structures in Zinc and Silicon Doped Ga0.51In0.49P and GaxIn1-xAsyP1-y Layers Grown on GaAs by Metalorganic Vapour Phase Epitaxy (1996) (6)
- Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells (1993) (6)
- Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode (2020) (6)
- Structural Investigation of the Bias‐Enhanced Nucleation and Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition (1998) (6)
- Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy (2000) (6)
- Low-Resistance and Reflective Ni/Rh and Ni/Au/Rh Contacts to p-GaN for Flip-Chip LEDs (2005) (6)
- Fabrication and Magnetic Properties of Nonmagnetic Ion Implanted Magnetic Recording Films for Bit-Patterned Media (2011) (6)
- Carbon nanofibers combined with Pt nanoparticles for use as counter electrodes in dye-sensitized solar cells (2012) (6)
- Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process (2011) (6)
- Electrical Characteristics of V/Ti/Au Contacts to Ga-Polar and N-Polar n-GaN Prepared by Different Methods (2010) (6)
- Heterostructures in GaInP grown using a change in V/III ratio (1997) (6)
- Delayed texture for improving the thermal stability of Ag reflectors for high-performance GaN-based light-emitting diodes (2014) (6)
- Growth of crack-free high-quality GaN on Si(111) using a low-temperature AlN interlayer: observation of tilted domain structures in the AlN interlayer (2003) (5)
- Fabrication of Patterned Magnetic Nanomaterials for Data Storage Media (2012) (5)
- Formation of nickel disilicide using nickel implantation and rapid thermal annealing (2003) (5)
- Improved Light Output Power of GaN-Based Light Emitting Diodes by Enhancing Current Spreading Using Single-Wall Carbon Nanotubes (2010) (5)
- Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots (2005) (5)
- N/sup +//P junction leakage characteristics of Co salicide process for 0.15 /spl mu/m CMOS devices (2002) (5)
- Thermally stable Nb and Nb/Au ohmic contacts to p-GaN (2001) (5)
- Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy (1999) (5)
- Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes (2011) (5)
- Electrical characteristics of Cu-doped In2O3/Sb-doped SnO2 ohmic contacts for high-performance GaN-based light-emitting diodes (2011) (5)
- The use of nitrogen to disorder GaInP (2004) (5)
- Combined effects of oxygen pressures and RF powers on the electrical characteristics of ITO-based multilayer transparent electrodes (2019) (5)
- Nitrogen surfactant effects in GaInP (2004) (5)
- Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector (2013) (5)
- Low Resistance CrB2 / Ti / Al Ohmic Contacts to N-face n-GaN for High Power GaN-Based Vertical Light Emitting Diodes (2010) (5)
- Inhomogeneity of barrier heights of transparent Ag/ITO Schottky contacts on n-type GaN annealed at different temperatures (2018) (5)
- Tetragonal distortion and the domain structure of thin Pb(Zr,Ti)O3/MgO(100) films (1998) (5)
- Improving the light output power of GaN-based light-emitting diodes through the use of SiO2 cones (2013) (5)
- Electrical and Structural Properties of W Ohmic Contacts to InGaN (2000) (5)
- Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs (2006) (5)
- Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector (2020) (5)
- Improving the thermal stability of nickel monosilicide thin films by combining annealing with the use of an interlayer and a capping layer (2011) (5)
- Effects of rapid thermal annealing on electrical, optical, and structural properties of Ni-doped In2O3 anodes for bulk heterojunction organic solar cells (2013) (5)
- Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films (2017) (5)
- Low resistance and highly reflective Cu–Ni solid solution/Ag ohmic contacts to p‐GaN for flip‐chip light emitting diodes (2004) (4)
- Interfacial reactions to form high-barrier-height ITO-based Schottky contacts on p-type GaN using a Ti interlayer (2018) (4)
- Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode (2014) (4)
- Visualization of Methanol Concentration Using the Electrochromism of Nickel Oxide (2005) (4)
- Effect of deposition temperature on cubic boron nitride thin film deposited by unbalanced magnetron sputtering method with a nanocrystalline diamond buffer layer (2013) (4)
- Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes (2012) (4)
- Surface photoabsorption transients and ordering in GaInP (1998) (4)
- ORDERING AND MICROSTRUCTURES OF GAN1-XASX LAYERS GROWN ON (0001) GAN/SAPPHIRE SUBSTRATES (1999) (4)
- Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode pattern (2015) (4)
- Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN (2003) (4)
- Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer (2006) (4)
- Characterization of sub ‐ 30 nm p + / n Junction Formed by Plasma Ion Implantation (2000) (4)
- Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes (2000) (4)
- The effects of nitrogen bonding on hardness of AIN/CrN multilayer hard coatings. (2012) (4)
- Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O2 Plasma Treatment (2011) (4)
- Effects of Te Doping on Ordering and Antiphase Boundaries in GaInP (2000) (4)
- Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers (2012) (4)
- Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes (2001) (4)
- Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes (2019) (4)
- Formation of High-Quality Ohmic Contacts to p-GaN for Flip-Chip LEDs Using Ag ∕ TiN x ∕ Al (2005) (4)
- Insights into the reactive ion etching mechanism of nanocrystalline diamond films as a function of film microstructure and the presence of fluorine gas (2010) (4)
- Influence of Size Reduction and Current Density on the Optoelectrical Properties of Green III-Nitride Micro-LEDs (2018) (4)
- Electrical, optical and etching properties of Zn-Sn-O thin films deposited by combinatorial sputtering (2012) (4)
- Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN (2001) (4)
- Improvement of the morphological stability of Ni-silicided Si0.8Ge0.2 layers by using a molybdenum interlayer (2004) (4)
- Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer (2010) (4)
- Heavy Mg Doping to Form Reliable Rh Reflective Ohmic Contact for 278 nm Deep Ultraviolet AlGaN-Based Light-Emitting Diodes (2020) (4)
- Electronic Transport Mechanism for Nonalloyed Ti-Based Ohmic Contacts to Strained n-AlGaN ∕ GaN Heterostructure (2007) (3)
- Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode (2020) (3)
- Self-catalytic-grown SnOx nanocones for light outcoupling enhancement in organic light-emitting diodes (2019) (3)
- Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer (2016) (3)
- Solution Processed High-k Lanthanide Oxides for Low Voltage Driven Transparent Oxide Semiconductor Thin Film Transistors (2011) (3)
- Design of mid-infrared filter array based on plasmonic metal nanodiscs array and its application to on-chip spectrometer (2021) (3)
- Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode (2011) (3)
- Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer. (2019) (3)
- Oblique-Angle Deposited SiO2/Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diode (2020) (3)
- Structural and optical properties of lateral composition modulation in (GaP)/sub n//(InP)/sub n/ short-period superlattice (2002) (3)
- Stable electrical performance of AlGaInP-based red micro-light emitting diode by controlling interfacial morphologies of metal contacts (2021) (3)
- Improved light output power of GaN‐based ultraviolet light‐emitting diode using a mesh‐type GaN/SiO2/Al omnidirectional reflector (2017) (3)
- High transparency of Ag∕Zn–Ni solid–solution ohmic contacts for GaN-based ultraviolet light-emitting diodes (2005) (3)
- Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer (2012) (3)
- Effects of Ultraviolet Wavelength and Ambient Temperature on Reliability of Silicones in InAlGaN-Based Light-Emitting-Diode Package (2020) (3)
- Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes (2014) (3)
- Improvement of the Electrical Properties of Al-Based Reflective Electrode on P-Type GaN for Flip-Chip Light-Emitting Diodes (2005) (3)
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths (2006) (3)
- Using Self-Aligned Si Barrier to Enhance the Contrast Ratio and Performance of Pixelated Light Emitting Diode for Vehicle Headlamp (2021) (3)
- A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes (2016) (3)
- Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness (2011) (3)
- High-Transmittance NiSc/Ag/ITO p-Type Ohmic Electrode for Near-UV GaN-Based Light-Emitting Diodes (2007) (3)
- Cellular uptake of folate-conjugated lipophilic superparamagnetic iron oxide nanoparticles (2009) (3)
- Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes (2010) (3)
- Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes (2014) (3)
- Low-resistance and transparent Ni–Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes (2008) (3)
- Dependence of thickness and temperature on the thermal stability of Ag films deposited on GaN layers for vertical-geometry GaN-based light-emitting diodes (2013) (3)
- Effects of Fe film Thickness and Ammonia on the Growth Behavior of Carbon Nanotubes grown by thermal Chemical Vapor Deposition (2001) (3)
- Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer (2009) (3)
- Structural properties of CdO layers grown on GaAs (0 0 1) substrates by metalorganic molecular beam epitaxy (2003) (3)
- Improved light output power of GaN-based light-emitting diodes by using Ag grids (2012) (3)
- Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes (2011) (3)
- Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy (2001) (3)
- Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode (2019) (3)
- Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodes (2011) (3)
- Relationship between the lateral length and thickness of the platelets in naturally occurring strained layer superlattice structures (2000) (2)
- Plasma and Annealing Treatments to Form Height-Barrier Ni-Based Schottky Contact to n-GaN (2019) (2)
- Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN (2006) (2)
- Using a NiZn solid solution layer to produce high-barrier height Schottky contact to semipolar (20–21) n-type GaN (2021) (2)
- Optical Diagnosis of the Microstructure of Mo Back Contact for CIGS Solar Cell (2009) (2)
- The Effect of Surface Defects on the Optical Properties of ZnSe:Eu Quantum Dots (2016) (2)
- Silver-induced activation for improving the electrical characteristics of GaN-based vertical light-emitting diodes (2013) (2)
- Photoluminescence investigation of rare-earth activated GdCa3(GaO)3(BO3)4 phosphors under UV excitation (2009) (2)
- Comparison of the Performance of Lateral and Vertical InGaN/GaN-Based Light-Emitting Diodes with GaN and AlN Nucleation Layers (2016) (2)
- Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN (2014) (2)
- Modulated Contrast and Associated Diffracted Intensity of GaPySb1-y Layers Grown Using Organometallic Vapor Phase Epitaxy (2008) (2)
- Effects of Pt junction on electrical transport of individual ZnO nanorod device fabricated by focused ion beam. (2012) (2)
- Improvement of the light output of AlGaInP-based light-emitting diode by employing highly transparent Au/ITO p-type electrode (2017) (2)
- Using Ag Sinter Paste to Improve the Luminous Flux and Reliability of InGaN-Based LED Package for Commercial Vehicle Daytime Running Light (2021) (2)
- Properties of ZnO thin films co-doped with hydrogen and fluorine. (2012) (2)
- Comparative study on the thickness-dependent properties of ITO and GZO thin films grown on glass and PET substrates (2012) (2)
- Transmission electron microscope structural study of Y2O3 films grown on Si(111) substrates by ultrahigh vacuum ionized cluster beam (1999) (2)
- Reducing forward voltage and enhancing output performance of InGaN‐based blue light‐emitting diodes using metal dot‐embedded transparent p‐type finger (2017) (2)
- Formation of thermally stable Ni monosilicide using an inductively coupled plasma process (2004) (2)
- Inverted Organic Solar Cells Fabricated with Room‐Temperature‐deposited Transparent Multilayer Electrodes (2017) (2)
- Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN (2009) (2)
- A Comparison Study on Multilayered Barrier Oxide Structure in Charge Trap Flash for Synaptic Operation (2021) (2)
- Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer (2016) (2)
- Modulated Structures and Atomic Ordering in InPySb1-y Layers Grown by Organometallic Vapor Phase Epitaxy (2008) (2)
- Effects of Br and Cl on organometallic vapor phase epitaxial growth and ordering in GaInP (2004) (2)
- The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer (2022) (2)
- Optimization of Ni/Ag-Based Reflectors to Improve the Performance of 273 nm Deep Ultraviolet AlGaN-Based Light Emitting Diodes (2021) (2)
- Effect of TiO2 nanopatterns on the performance of hydrogenated amorphous silicon thin-film solar cells (2012) (2)
- GaN-based Light Emitting Diode with Transparent Nanoparticles-Embedded p-Ohmic Electrodes (2005) (2)
- Effect of moisture in a vacuum chamber on the deposition of c-BN thin film using an unbalanced magnetron sputtering method (2012) (1)
- Improved Leakage and Output Characteristics of Pixelated LED Array for Headlight application (2020) (1)
- Selective Coating of White Silicone to Improve the Optical and Thermal Characteristics of White LED Packages (2020) (1)
- Growth behavior of cubic boron nitride (cBN) phase in B-C-N film deposited on Si substrate with non-uniform ion flux (2013) (1)
- Formation of Nonalloyed Low Resistance Ni/Au Ohmic Contacts to p-Type GaN Using Au Nanodots [Electrochemical and Solid-State Letters, 7, G179 (2004)] (2004) (1)
- Effects of Si doping on ordering and domain structures in GaInP (2000) (1)
- Ultra - Shallow p + /n Junction Formed by Plasma Ion Implantation (2000) (1)
- Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride (2000) (1)
- Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio (1997) (1)
- Recent development of patterned structure light-emitting diodes (2005) (1)
- High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes (2006) (1)
- Effect of a Mo Interlayer on the Electrical Properties of Ni-Silicided n + ∕ p Diode and n + Poly-Si Gate Electrode (2007) (1)
- Thermally stable AgCu alloy disc array for near infrared filters (2020) (1)
- Inductively coupled plasma reactive ion etching of ZrO2:H solid electrolyte film in BCl3-based plasmas (2005) (1)
- Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs Quantum Well Structure (1997) (1)
- Formation of InAs quantum dots on GaAs(100) by chemical beam epitaxy (1997) (1)
- Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga_ In_ As/Ga_xIn_ As_yP_ /Ga_ In_ P/GaAs Quantum Well Structure (1997) (1)
- In Situ Heating Transmission Electron Microscopy Observation of Nanoeutectic Lamellar Structure in Sn–Ag–Cu Alloy on Au Under-Bump Metallization (2013) (1)
- Structural, optical, and magnetic properties of Ag+, Mn+ and Ar+ ions implanted ZnO thin films: effect of implantation dose and stopping energy (2022) (1)
- Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes (2017) (1)
- Improving Performance of GaAs-Based Vertical-Cavity Surface-Emitting Lasers by Employing Thermally Conductive Metal Substrate (2021) (1)
- Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode (2020) (1)
- Ni implantation-induced enhancement of the crystallisation of amorphous Si (2006) (1)
- Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer. (2014) (1)
- Effect of deposition temperature on the alignment of hexagonal laminates in turbostratic boron nitride thin film (2014) (1)
- A Ferroelectric Thin-Film Transistor Based on Sputtered HfZrO and IGZO (2020) (1)
- Preface—JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki (2019) (1)
- Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaN∕GaN quantum-well active layers (2005) (1)
- Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact (2021) (1)
- Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes (2012) (1)
- Growth and properties of completely amorphous vanadium oxide cathode thin film with Pt co-sputtering method (2003) (1)
- Synthesis of Crystalline film from ${CH_4}-{H_2}-{N_2}$ gases with MW-PACVD (2000) (0)
- Low Resistance and Thermally Stable Pt/W/Au Ohmic Contacts to P-Type GaN (1999) (0)
- Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0) (2012) (0)
- Erratum to: Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes (2012) (0)
- Structural evolution of carbon nanotubes grown on Fe-deposited Si substrates by thermal chemical vapour deposition (2018) (0)
- Erratum to: Growth Behavior of Cubic Boron Nitride (cBN) Phase in B-C-N Film Deposited on Si Substrate with Non-Uniform Ion Flux (2013) (0)
- plasmas and effect of the plasma treatment on TiyAu ohmic contacts to ZnO (2004) (0)
- Frequency-tunable nano-oscillator based on Ovonic Threshold Switch (OTS). (2020) (0)
- Designing transparent conductive electrodes for photovoltaic cells (2013) (0)
- Effect of RuO$_2$ Thin Film Microstructure on Characteristics of Thin Film Micro-supercapacitor (2001) (0)
- Synthesis of Electrospun RuO2 and Co3O4 Composite Nanofibers for Electrochemical Supercapacitors (2009) (0)
- Low resistance and highly reflective ohmic contacts to p ‐type GaN using transparent interlayers for flip‐chip light emitting diodes (2006) (0)
- Ultrashallow P(+) /N Junction Formation by Plasma Ion Implantation (2000) (0)
- A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes (2017) (0)
- Role of a Mo interlayer on the thermal stability of nickel silicides (2018) (0)
- Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers (2018) (0)
- Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy (1999) (0)
- Core/Shell Ag/ZnO Nanochurros: An Optically Flat Conductive Outcoupler Using Core/Shell Ag/ZnO Nanochurros (Small 20/2018) (2018) (0)
- Publisher’s Note: “Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes” [Appl. Phys. Lett. 101, 021115 (2012)] (2012) (0)
- High Quality Non-Alloyed Pt Ohmic Contacts to P -Type GaN Using Two-Step Surface Treatment (1999) (0)
- Effects of Tantalum Doping on Electrical Characteristics of Indium-Gallium-Zinc Oxide Thin-Film Transistors (2020) (0)
- Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts (2011) (0)
- Phase separation and atomic ordering in InAsSb epitaxial layers grown by molecular beam epitaxy (1997) (0)
- (Electronics and Photonics Division Award Address) Performance of InGaN/GaN-Based Light Emitting Diodes Fabricated with ZnO Nanorods (2018) (0)
- Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN (2004) (0)
- Electrochemical Properties of Carbon-Coated Lithium Vanadium Oxide Anode for Lithium-Ion Battery (2010) (0)
- Passivation to Improve the Efficiency and Reliability of III-Nitride Micro-Light-Emitting Diode (2020) (0)
- Fabrication and Analysis of Thin Film Supercapacitor using a Cobalt Oxide Thin Film Electrode (2001) (0)
- High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment (2000) (0)
- TEM structural study of GaInP layers grown by solid source molecular beam epitaxy (2018) (0)
- Erratum: Visualization of Methanol Concentration Using the Electrochromism of Nickel Oxide [ Electrochem. Solid-State Lett. , 8 , A277 (2005) ] (2005) (0)
- Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist (2017) (0)
- Erratum: “Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN” [Appl. Phys. Lett. 89, 262115 (2006)] (2007) (0)
- Effect of the Surface Morphology of Plated Printed Circuit Board on the Reliability of LED Packages (2020) (0)
- The Effect Of The Nucleation Layer On The Low Temperature Growth Of Gan Using A Remote Plasma Enhanced – Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD) (1997) (0)
- Microstructural characterization of heteroepitaxial layers of III-V compound semiconductors (1991) (0)
- Highly Oriented Textured Diamond Films on Si Substrate though 2-step Growth Method (1999) (0)
- IIIVN-related quantum structures for 1.5 [micro sign]m emission (2003) (0)
- Electronic Structure of Supelattice and Twin in Ga Doped ZnO Measured by Monochromated EELS (2011) (0)
- Vertical growth of core-shell III-V nanowires for solar cells application. (2014) (0)
- Performance Comparison of InGaN-Based Phosphor Converted and AlGaInP-Based Red Light-Emitting Diode Packages for Vehicle Rear Fog Lamps (2020) (0)
- TEM study of diffused n+/p junctions produced by KrF excimer laser thermal annealing (2018) (0)
- Improved Reliability of 278 nm Deep Ultraviolet AlGaN-Based Flip-Chip Light Emitting Diodes by Using ITO/Al Contact (2021) (0)
- Growth and defect behaviour of diamond films grown on BEN - pretreated Si substrates (1998) (0)
- Electrical and Structure Properties of W Ohmic Contacts to $\textrm{In}_{x}\textrm{Ga}_{1-x}\textrm{N}$ (1999) (0)
- Improving the thermal stability of Ag Ohmic contacts for GaN-based vertical light-emitting diodes with a Cu capping layer (2012) (0)
- Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes (2004) (0)
- Title High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing (2005) (0)
- Comparative study on the thickness-dependent properties of ITO and GZO thin films grown on glass and PET substrates (2012) (0)
- Improving the thermal stability of Ag Ohmic contacts for GaN-based vertical light-emitting diodes with a Cu capping layer (2012) (0)
- Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer (1996) (0)
- al lithiation of single crystalline silicon nanowires : in situ characterization and fi rst principles modeling † (2015) (0)
- Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer (2016) (0)
- Applications of Nanomanipulator in Nanowires (2009) (0)
- Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes (2022) (0)
- (Electronics and Photonics Division Award Address) Technological Issues and Design Rules of Electrodes for High-Efficiency GaN-Based Light-Emitting Diodes (2018) (0)
- High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment (1999) (0)
- Tantalum Doping to Improve Switching Characteristics and Bias Stress Stability of Amorphous Indium-Gallium-Zin Oxide Thin-Film Transistors (2021) (0)
- Electrical transport phenomena of single ZnO nanowire device directly measured using nano manipulator (2010) (0)
- Palladium-Based Alloy Nanoparticles for Direct Liquid Fuel Cells (2018) (0)
- Reverse layered transfer technology as an innovative manufacturing process for high-efficiency OLED lightings (Conference Presentation) (2018) (0)
- Characterisation of GaNP Layers Grown on (0001) GaN/Sapphire by Gas Source Molecular Beam Epitaxy (1998) (0)
- Formation of Natural InAlAs Vertical Superlattices (1996) (0)
- Reducing forward bias voltage of InGaN/GaN-based light emitting diodes by using (In)GaN contact layer (2015) (0)
- Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism (2016) (0)
- Optimized SrVO3/Ag/SrVO3 Multilayers As High Transparency Electrodes for UV Optoelectronic Devices (2020) (0)
- Hardness and nitrogen bonding structure of AlxTi1-xN/CrN multilayer hard coating. (2012) (0)
- Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation (2006) (0)
- LED Mater & Process (2015) (0)
- Effect of Phosphor Layer Size on the Optical and Thermal Properties of Chip Scale Packaged Light-Emitting Diodes (2018) (0)
- Electrical, optical and etching properties of Zn-Sn-O thin films deposited by combinatorial sputtering (2012) (0)
- Influence of CCI₄ on GaAs surface morphology during the AP - MOCVD GaAs growth (1997) (0)
- Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides (2003) (0)
- Di-block copolymer directed anodization of hexagonally ordered nanoporous aluminum oxide (2011) (0)
- Atomic Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching (1997) (0)
- Electrical and Structural Properties of Ti/Au Ohmic Contacts on N-ZnO:Al (2000) (0)
- TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD InxGa1-xAs layers. Dependence on growth temperature and growth rate (1991) (0)
- Improved Light Output Power of Ultraviolet GaN-Based Light-Emitting Diode by Using AgPdCu Reflector (2019) (0)
- Structural and electrochemical properties of Ag nano-dots combined amorphous Si electrodes for thin-film lithium rechargeable batteries. (2010) (0)
- (Invited) Vertical-Geometry GaN-Based Light-Emitting Diodes: Improving Current Injection and Light Extraction Efficiencies (2014) (0)
- Electrical Characteristics of Thermally Stable Ag-Pd-Cu Alloy Schottky Contacts on n-Al0.6Ga0.4N (2022) (0)
- Electrochromic Properties of WO3-Ta2O5 Nanocomposite Electrodes (2006) (0)
- Structural Characteristics of $Y_2O_3$ Films Grown on Differently Surface-treated Si(111) by Ultrahigh Vacuum Ionized Cluster Beam (1999) (0)
- Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching (1997) (0)
- Carrier Concentration Dependence of the Electrical Behaviors of ITO Contacts on n-Type ZnO (2009) (0)
- Fabrication of Amorphous SRVOX-Based Memristor for Neuromorphic Computing (2020) (0)
- Effect of Bi3+ addition on photoluminescence of (Y,Gd)(V,P)04:Eu phosphor (2008) (0)
- Microstructures of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy (2018) (0)
- Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates (2003) (0)
- Growth and Characterization of Si-based Nanocomposite Electrode (2006) (0)
- Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy (2008) (0)
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