Tak Hung Ning
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Tak Hung Ningengineering Degrees
Engineering
#7371
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#8741
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Electrical Engineering
#2297
World Rank
#2405
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Engineering
Tak Hung Ning's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering Stanford University
Why Is Tak Hung Ning Influential?
(Suggest an Edit or Addition)Tak Hung Ning's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Fundamentals of Modern VLSI Devices (1998) (1994)
- Emission probability of hot electrons from silicon into silicon dioxide (1977) (284)
- The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface (1972) (243)
- 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints (1979) (227)
- Optically induced injection of hot electrons into SiO2 (1974) (214)
- Hot-electron emission in N-channel IGFET's (1979) (209)
- High‐field capture of electrons by Coulomb‐attractive centers in silicon dioxide (1976) (192)
- Effect of emitter contact on current gain of silicon bipolar devices (1980) (174)
- Method for determining the emitter and base series resistances of bipolar transistors (1984) (168)
- Hot-electron emission from silicon into silicon dioxide (1978) (144)
- Self-aligned bipolar transistors for high-performance and low-power-delay VLSI (1981) (116)
- Electron scattering in silicon inversion layers by oxide and surface roughness (1976) (115)
- Electron trapping in SiO2 due to electron‐beam deposition of aluminum (1978) (103)
- Capture cross section and trap concentration of holes in silicon dioxide (1976) (94)
- Multivalley Effective-Mass Approximation for Donor States in Silicon. I. Shallow-Level Group-V Impurities (1971) (90)
- Effect of electron trapping on IGFET characteristics (1977) (88)
- Thermal reemission of trapped electrons in SiO2 (1978) (86)
- A Room Temperature 0.1 /spl mu/m CMOS on SOI (1993) (77)
- Theory of Scattering of Electrons in a Nondegenerate-Semiconductor-Surface Inversion Layer by Surface-Oxide Charges (1972) (76)
- High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET (2012) (68)
- A model for negative bias temperature instability (NBTI) in oxide and high κ pFETs (2004) (64)
- Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface (2011) (60)
- Effect of emitter contact on current gain of silicon bipolar devices (1979) (52)
- Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors (2003) (51)
- Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics (2001) (50)
- Electron trapping at positively charged centers in SiO2 (1975) (49)
- A novel high-performance lateral bipolar on SOI (1991) (46)
- 1 pm MOSFET VLSI Technology: Part lV— Hot-Electron Design Constraints (1979) (45)
- Vertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate (2003) (44)
- 1.25 /spl mu/m Deep-Groove-Isolated Self-Aligned Bipolar Circuits (1982) (44)
- Design considerations of high-performance narrow-emitter bipolar transistors (1987) (40)
- An advanced high-performance trench-isolated self-aligned bipolar technology (1987) (39)
- Why BiCMOS and SOI BiCMOS (2002) (39)
- Threshold instability in IGFET’s due to emission of leakage electrons from silicon substrate into silicon dioxide (1976) (38)
- 1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints (1979) (38)
- CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications (1995) (38)
- A submicrometer high-performance bipolar technology (1989) (37)
- Multivalley Effective-Mass Approximation for Donor States in Silicon. II. Deep-Level Group-VI Double-Donor Impurities (1971) (35)
- On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI (2013) (35)
- Scaling properties of bipolar devices (1980) (34)
- Bipolar trends (1986) (34)
- A High Performance 0.25/spl mu/m CMOS (1993) (33)
- High-performance devices for a 0.15- mu m CMOS technology (1993) (31)
- Reliability analysis of self-aligned bipolar transistor under forward active current stress (1986) (31)
- Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing (1990) (31)
- SOI for a 1-volt CMOS technology and application to a 512 Kb SRAM with 3.5 ns access time (1993) (30)
- On the narrow-emitter effect of advanced shallow profile bipolar transistors (1988) (29)
- Subnanosecond self-aligned I2L/MTL circuits (1980) (27)
- Fully-depleted-collector polysilicon-emitter SiGe-base vertical bipolar transistor on SOI (2002) (26)
- History and future perspective of the modern silicon bipolar transistor (2001) (26)
- A simulation study on thin SOI bipolar transistors with fully or partially depleted collector (2002) (25)
- Hot-electron-induced instability in 0.5- mu m p-channel MOSFETs patterned using synchrotron X-ray lithography (1989) (24)
- Complementary thin-base symmetric lateral bipolar transistors on SOI (2011) (24)
- A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO/sub 2/) (2005) (22)
- A 27 GHz 20 ps PNP technology (1989) (21)
- Photothermal ionization via excited states of sulfur donor in silicon (1971) (20)
- A comprehensive study of hot-carrier instability in p- and n-type poly-Si gated MOSFET's (1994) (18)
- A subnanosecond 5-kbit bipolar ECL RAM (1988) (17)
- A comparison between bipolar transistor and nanowire field effect transistor biosensors (2015) (17)
- On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors (2014) (16)
- 73ps si bipolar ECL circuits (1986) (16)
- A 23 ps/2.1 mW ECL gate (1989) (16)
- A model for negative bias temperature instability (NBTI) in oxide and high /spl kappa/ pFETs 13/spl times/-C6D8C7F5F2 (2004) (16)
- Observation of Mobility Anisotropy of Electrons on (110) Silicon Surfaces at Low Temperatures (1972) (15)
- A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric (1992) (15)
- Hot-carrier charge trapping and reliability in high-k dielectrics (2002) (15)
- Technologies to further reduce soft error susceptibility in SOI (2009) (15)
- CMOS in the new millennium (2000) (14)
- Effect of off-axis implant on the characteristics of advanced self-aligned bipolar transistors (1987) (13)
- A high performance BiCMOS technology using 0.25 mu m CMOS and double poly 47 GHz bipolar (1992) (13)
- A Perspective on Symmetric Lateral Bipolar Transistors on SOI as a Complementary Bipolar Logic Technology (2015) (13)
- Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography (1990) (13)
- Sub-300-ps CBL circuits (1989) (13)
- Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI (2005) (13)
- Effects of inhomogeneities of surface-oxide charges on the electron energy levels in a semiconductor surface-inversion layer (1974) (13)
- Advancing the state of the art in high-performance logic and array technology (1992) (12)
- Substrate bias effects in vertical SiGe HBTs fabricated on CMOS-compatible thin film SOI (2005) (12)
- Self-aligned npn bipolar transistors (1980) (12)
- A perspective on the theory of MOSFET scaling and its impact (2007) (11)
- The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistors (1989) (11)
- Bipolar transistors on thin SOI: concept, status and prospect (2004) (11)
- Hot-electron emission currents in N-channel IGFET's (1977) (11)
- SiGe-on-insulator symmetric lateral bipolar transistors (2015) (10)
- Sub-nanosecond self-aligned I2L/MTL circuits (1979) (10)
- A Perspective on SOI Symmetric Lateral Bipolar Transistors for Ultra-Low-Power Systems (2016) (10)
- IIIa-2 characterization of electronic gate current in IGFETS operating in the linear and saturation regions (1977) (10)
- Hot-electron design constraints for one-micron IGFET's (1978) (9)
- SOI lateral bipolar transistor with drive current >3mA/μm (2013) (9)
- On the Base Current Components in SOI Symmetric Lateral Bipolar Transistors (2016) (9)
- Will SOI have a life for the low-power market? (2008) (9)
- A sub-50 ps single poly planar bipolar technology (1988) (8)
- Silicon technology directions in the new millennium (2000) (8)
- Photoionization cross sections of a two-electron donor center in silicon (1976) (8)
- SOI for Low-Voltage and High-Speed CMOS (1994) (8)
- A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS (1989) (8)
- Subnanosecond Self-Aligned I/sup 2/L/MTL Circuits (1980) (8)
- Substrate-Voltage Modulation of Currents in Symmetric SOI Lateral Bipolar Transistors (2016) (8)
- Stacked devices for SEU immune design (2010) (7)
- Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors (1991) (7)
- A CMOS technology roadmap for the next fifteen years (1995) (7)
- Epitaxial-base double-poly self-aligned bipolar transistors (1990) (6)
- Multi-valley effective-mass approximation of shallow donor levels in silicon (1970) (6)
- SOI series MOSFET for embedded high voltage applications and soft-error immunity (2008) (5)
- On the impurity profiles of down scaled bipolar transistors (1986) (5)
- Silicon VLSI trends - what else besides scaling CMOS to its limit? (2003) (5)
- A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation (2018) (5)
- 0.25 /spl mu/m low power CMOS devices and circuits from 8 inch SOI materials (1995) (5)
- Directions for silicon technology as we approach the end of CMOS scaling (2010) (4)
- Trade-offs between SiGe and GaAs bipolar ICs (1995) (4)
- Advances in Bipolar IC Technology (1987) (3)
- CMOS Device Design (2009) (3)
- A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs (1989) (3)
- Summary Abstract: Materials and physics issues in scaling bipolar devices (1987) (3)
- A perspective on future nanoelectronic devices (2013) (3)
- Polysilicon-emitter SiGe-base bipolar transistors-what happens when Ge gets into the emitter? (2003) (3)
- Bipolar junction transistor based sensors for chemical and biological sensing (2016) (3)
- Voltage and Temperature Dependence of Interface Trap Generation by Hot Electrons in P- and N- Poly Gated MOSFETs (1991) (3)
- Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology (2008) (2)
- Trends in CMOS technology and application development (1997) (2)
- Silicon VLSI technology-today and tomorrow (1991) (2)
- Group-VI donor impurities in silicon (1971) (2)
- Silicon technology-emerging trends from a system application perspective (2003) (2)
- FEOL technology trend (1998) (2)
- TP-A1 shallow-level electron traps in SiO2 (1978) (2)
- The Potential of Bipolar Devices for VLSI (1981) (2)
- Ultra-Low Leakage Silicon-on-Insulator Technology for 65 nm Node and Beyond (2007) (2)
- Comparison of Effects of Ionizing Radiation and High-Current Stress on Characteristics of Self-Aligned Bipolar Transistors (1988) (1)
- GLSVLSI 2008 invited/keynote talk (2008) (1)
- A high performance low temperature 0.3 mu m CMOS on SIMOX (1992) (1)
- First demonstration of symmetric lateral NPN transistors on SOI featuring epitaxially-grown emitter/collector regions (2017) (1)
- Heterojunction bipolar transistors with hydrogenated amorphous silicon contacts on crystalline silicon (2012) (1)
- History, Present Trends, and Scaling of Silicon Bipolar Technology (1987) (1)
- A Statistical Mechanics Model for NBTI in Oxides (2006) (1)
- SiGe HBTs on CMOS-Compatible SOI (2005) (1)
- 0.1μm Technology and Beol (1996) (1)
- Hot-carrier induced instability of 0.5 mu m CMOS devices patterned using synchrotron X-ray lithography (1989) (1)
- With SiGe, who needs GaAs? (1998) (1)
- Future directions for CMOS device technology development from a system application perspective (2007) (1)
- Semiconductor-On-Insulator lateral bipolar transistors for high-speed low-power applications (2017) (1)
- The Wiring Challenge: Complexity and Crowding (1996) (0)
- On Shockley's 1952 Proceedings Of The IRE Paper (1997) (0)
- Multi-Valley Effective-Mass Approximation of Group -v and Group-Vi Donor States in Silicon. (1971) (0)
- Design and technology challenges for sub-0.5 mu m CMOS and bipolar (1989) (0)
- Eeprom memory cell structure and its manufacturing method (1993) (0)
- Leakage Engineering Enabling PDSOI Ring Oscillators Operating in Sub-100pA/µm Ioff Regime (2011) (0)
- The physics of scaled bipolar devices (2008) (0)
- A Study of NBTI and PBTI (Charge Trapping) in High k Stacks with NiSi, TiN, Re Gates (2007) (0)
- Polycrystalline Silicon in ULSI Technologies: Challenges for Deep-Submicron Structures (1990) (0)
- Session 15 Integrated circuits—Bipolar integrated circuits (1980) (0)
- Increasing the current driving capability of epitaxial Schottky-barrier diodes using high-energy implantation (1985) (0)
- Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions (2018) (0)
- Silicon VLSI Technology Trends (1992) (0)
- Invited Possibilities and Limitations of Bipolar Devices (2008) (0)
- Include sensors, the lateral complementary bipolar transistors (2016) (0)
- Session 8 Integrated circuitsAdvanced bipolar integrated circuits (1979) (0)
- Invited The Technology Trends in Sub-O , 5 pm Bipolar (2008) (0)
- Ge-on-insulator lateral bipolar transistors (2016) (0)
- Future silicon technology trends from a system application perspective (2003) (0)
- The Technology Trends in Sub-0.5 μm Bipolar (1990) (0)
- Measuring biomolecules and charged ions in an electrolyte (2011) (0)
- Simulation Study of Simple CMOS-Compatible Thin-SOI Vertical Bipolar Transistors on Thin BOX with an Inversion Collector (2004) (0)
- CMOS performance and density trends as we approach 0.1 /spl mu/m (1998) (0)
- The Future of CMOS -- Limits and Opportunities (2007) (0)
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