Takashi Fukui
#157,402
Most Influential Person Now
Takashi Fukui's AcademicInfluence.com Rankings
Takashi Fukuiengineering Degrees
Engineering
#6627
World Rank
#7963
Historical Rank
Electrical Engineering
#2000
World Rank
#2103
Historical Rank
Applied Physics
#2158
World Rank
#2197
Historical Rank
Download Badge
Engineering
Takashi Fukui's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering University of Tokyo
Why Is Takashi Fukui Influential?
(Suggest an Edit or Addition)Takashi Fukui's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- A III–V nanowire channel on silicon for high-performance vertical transistors (2012) (661)
- Control of InAs nanowire growth directions on Si. (2008) (322)
- GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si. (2010) (313)
- Single GaAs/GaAsP coaxial core-shell nanowire lasers. (2009) (248)
- Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy (2005) (229)
- Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy (2009) (209)
- Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays (2005) (209)
- GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition (1991) (197)
- Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence (2005) (196)
- Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates (2004) (180)
- Self-organized growth of quantum-dot structures (1996) (174)
- (AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition (1987) (169)
- Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy (2005) (160)
- (AlAs)1/2(GaAs)1/2 fractional‐layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition (1988) (157)
- Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy (2006) (155)
- Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction (2012) (146)
- Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si(111) substrate (2009) (145)
- Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE (2007) (140)
- Two-stage Kondo effect in a quantum dot at a high magnetic field. (2001) (137)
- III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (2011) (137)
- Growth of highly uniform InAs nanowire arrays by selective-area MOVPE (2007) (123)
- A majority-logic device using an irreversible single-electron box (2003) (120)
- Tunnel field-effect transistor using InAs nanowire/Si heterojunction (2011) (114)
- van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene. (2012) (111)
- Selective-area growth of III-V nanowires and their applications (2011) (111)
- Organometallic VPE Growth of InAs1-xSbx on InAs (1980) (103)
- Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy (2008) (100)
- Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires. (2011) (96)
- Structural transition in indium phosphide nanowires. (2010) (91)
- Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates (2010) (90)
- Realization of conductive InAs nanotubes based on lattice-mismatched InP∕InAs core-shell nanowires (2006) (76)
- Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs (2013) (72)
- Atomic force microscopy study of strained InGaAs quantum disks self‐organizing on GaAs (n11)B substrates (1994) (71)
- Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition (1990) (71)
- Acoustic phonon generation and detection in GaAs/Al0.3Ga0.7As quantum wells with picosecond laser pulses (2005) (71)
- New GaAs quantum wires on (1989) (70)
- Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires (1989) (68)
- Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices. (2011) (67)
- Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique. (2013) (64)
- Metallic Mesh Bandpass Filters and Fabry-Perot Interferometer for the Far Infrared (1969) (63)
- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVD (1984) (62)
- Anomalous molecular orientation of isotactic polypropylene sheet containing N,N′-dicyclohexyl-2,6-naphthalenedicarboxamide (2009) (62)
- Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy (2007) (61)
- Observation of Microcavity Modes and Waveguides in InP Nanowires Fabricated by Selective-Area Metalorganic Vapor-Phase Epitaxy (2007) (57)
- Position controlled nanowires for infrared single photon emission (2010) (53)
- Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy (2007) (52)
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method (1980) (51)
- Mechanism of Multiatomic Step Formation during Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy (1994) (51)
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy (1995) (49)
- Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE (2004) (49)
- Kink defects and Fermi level pinning on (2×4) reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and x-ray photoelectron spectroscopy (1997) (47)
- Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy (2008) (45)
- Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy (1992) (45)
- Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy (2007) (43)
- Terrace width ordering mechanism during epitaxial growth on a slightly tilted substrate (1989) (43)
- Improved 2DEG mobility in selectively doped GaAs/N-AlGaAs grown by MOCVD using triethyl organometallic compounds (1984) (43)
- InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application (2003) (43)
- Recent progress in integration of III–V nanowire transistors on Si substrate by selective-area growth (2014) (43)
- A majority-logic nanodevice using a balanced pair of single-electron boxes. (2002) (42)
- Self‐organization of strained GaInAs microstructures on InP (311) substrates grown by metalorganic vapor‐phase epitaxy (1995) (42)
- GaAs/InGaP Core–Multishell Nanowire-Array-Based Solar Cells (2013) (40)
- Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(1 1 1)B surface reconstructions in selective-area metal organic vapour-phase epitaxy (2009) (40)
- Indium Phosphide Core–Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer (2013) (39)
- Ideal Crystal Growth from Kink Sites on a GaAs Vicinal Surface by Metalorganic Chemical Vapor Deposition (1990) (39)
- Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires (2008) (39)
- Natural Superstep Formed on GaAs Vicinal Surface by Metalorganic Chemical Vapor Deposition (1990) (39)
- Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy (1997) (38)
- Narrow two‐dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth (1987) (38)
- Position-Controlled III–V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal–Organic Vapor Phase Epitaxy (2012) (36)
- Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length (2014) (33)
- Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application. (2015) (32)
- Formation and photoluminescence characterization of quantum well wires using multiatomic steps grown by metalorganic vapor phase epitaxy (1994) (31)
- Quantum well wire fabrication method using self-organized multiatomic steps on vicinal (001) GaAs surfaces by metalorganic vapor phase epitaxy (1995) (31)
- InGaAs axial-junction nanowire-array solar cells (2014) (30)
- Atomic structure model for Ga1−xInxAs solid solution (1985) (30)
- Molecular orientation and mechanical anisotropy of polypropylene sheet containingN,N′-dicyclohexyl-2,6-naphthalenedicarboxamide (2009) (29)
- Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs∕GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy (2006) (29)
- Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch (2013) (29)
- Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy (2000) (29)
- Indium tin oxide and indium phosphide heterojunction nanowire array solar cells (2013) (29)
- Single-electron AND/NAND logic circuits based on a self-organized dot network (2003) (28)
- Calculation of Bond Length in Ga1-xInxAs Ternary Semiconductors (1984) (28)
- Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy (2009) (28)
- Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals (2004) (28)
- Properties of InP Films Grown by Organometallic VPE Method (1980) (27)
- MOCVD Methods for Fabricating GaAs Quantum Wires and Quantum Dots (1992) (27)
- Bidirectional growth of indium phosphide nanowires. (2012) (27)
- Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs∕InP (111)B layers by metal-organic vapor phase epitaxy (2006) (27)
- GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE (2013) (26)
- New field-effect transistor with quantum wire and modulation-doped heterostructures (1988) (26)
- Selective epitaxy of GaAs/AlGaAs on (111) B substrates by MOCVD and applications to nanometer structures (1991) (26)
- InAs quantum dot formation on GaAs pyramids by selective area MOVPE (1998) (26)
- Growth of All-Wurtzite InP/AlInP Core-Multishell Nanowire Array. (2017) (24)
- Self-assembly and selective-area formation of ferromagnetic MnAs nanoclusters on lattice-mismatched semiconductor surfaces by MOVPE (2008) (24)
- Reaction-Diffusion Systems Consisting of Single-Electron Oscillators (2005) (24)
- Lateral interface mixing in GaAs quantum well wire arrays (1989) (24)
- Anisotropy in photoluminescence and absorption spectra of fractional layer superlattices (1991) (23)
- High Power Travelling-Wave Type Ultrasonic Motor (1995) (23)
- Vapor-solid distribution relation in MOCVD GaAsxP1−x and InAsxP1−x (1985) (23)
- Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE (2015) (23)
- Photoluminescence Spectroscopy of Near-Surface Quantum Wells : Electronic Coupling Between Quantized Energy Levels and the Sample Surface (1993) (23)
- Direct observation of optical anisotropy in a GaAs/AlAs quantum well wire array (1991) (22)
- SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement (2008) (22)
- Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy (2003) (22)
- Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure. (2009) (21)
- Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence (2007) (21)
- Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs (2005) (21)
- Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy (2012) (20)
- Multiatomic step formation mechanism of metalorganic vapor phase epitaxial grown GaAs vicinal surfaces and its application to quantum well wires (1995) (20)
- Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors (2007) (20)
- Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses (2012) (20)
- Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy (2005) (19)
- Self-Organized Quantum Dots (1996) (19)
- Electron wave interference device with vertical superlattices working in large current region (1989) (19)
- A methodological and preliminary study on the acoustic effect of a trumpet player's vocal tract. (2011) (18)
- Superlattice Structure Observation for (AlAs)1/2(GaAs)1/2 Grown on (001) Vicinal GaAs Substrates (1988) (18)
- Step-density dependence of growth rate on vicinal surface of MOCVD (1991) (18)
- Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE (2002) (18)
- Dielectric constants of H2O and D2O ice in the terahertz frequency regime over a wide temperature range (2014) (18)
- High field electron transport in n‐InP/GaInAs two‐dimensional electron gas (1985) (18)
- Organometallic VPE Growth of InAs (1979) (17)
- Formation and characterization of InGaAs strained quantum wires on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy (1997) (17)
- Channeling studies of InGaAs ternary alloys and InGaAs/InP superlattices grown by metalorganic chemical vapor deposition (1985) (17)
- Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires (2010) (17)
- GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices (2001) (17)
- Magnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vapor phase epitaxy (2009) (16)
- Anomalous Luminescence near the InGaAsP–InP Heterojunction Interface (1979) (16)
- Advances in III-V Semiconductor Nanowires and Nanodevices (2018) (16)
- In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface (1998) (16)
- Self-organised InGaAs quantum wire lasers on GaAs multi-atomic steps (1998) (15)
- Dynamics of selective metalorganic vapor phase epitaxy growth for GaAs/AlGaAs micro-pyramids (1994) (15)
- GaAs tetrahedral quantum dot structures fabricated using selective area MOCVD (1992) (14)
- Vertical In0.7Ga0.3As nanowire surrounding-gate transistors with high-k gate dielectric on Si substrate (2011) (14)
- Dependence on In content of InxGa1−xAs quantum dots grown along GaAs multiatomic steps by MOVPE (2002) (13)
- Multiatomic step formation on GaAs(001) vicinal surfaces during thermal treatment (1996) (13)
- Fractional superlattices grown by MOCVD and their device applications (1992) (12)
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition (1984) (12)
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide (1983) (12)
- Self-assembled formation of ferromagnetic MnAs nanoclusters on GaInAs/InP (111) B layers by metal-organic vapor phase epitaxy (2007) (12)
- Polarized photoluminescence from single wurtzite InP/InAs/InP core-multishell nanowires (2011) (12)
- Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy (1998) (12)
- Selective area MOVPE growth of two-dimensional photonic crystals having an air-hole array and its application to air-bridge-type structures (2002) (12)
- Growth and characterization of InAs/GaAs monolayer structures (1988) (11)
- (InAs)1(GaAs)1 Layered Crystal Grown on (100)InP by MOCVD (1985) (11)
- Growth Direction Control of Ferromagnetic MnAs Grown by Selective-Area Metal–Organic Vapor Phase Epitaxy (2009) (11)
- Electron wave interference device with fractional layer superlattices (1991) (11)
- A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy (2005) (11)
- Step ordering during fractional‐layer superlattice growth on GaAs(001) vicinal surfaces by metalorganic chemical vapor deposition (1993) (11)
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates. (1995) (11)
- Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well (2008) (11)
- Polarization‐dependent optical nonlinearities in fractional‐layer superlattices (1991) (11)
- Fabrication of high density ultrafine GaAs quantum wire array structures using selective metalorganic chemical vapor deposition (1992) (11)
- Optical characterization and laser operation of InGaAs quantum wires on GaAs multiatomic steps (1998) (11)
- Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy (2009) (11)
- Lattice-mismatched InGaAs nanowires formed on GaAs(1 1 1)B by selective-area MOVPE (2011) (11)
- One- and two-dimensional spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowires (2010) (10)
- Catalyst-free selective-area MOVPE of semiconductor nanowires (2006) (10)
- Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor‐phase epitaxy (2004) (10)
- Application of free-standing InP nanowire arrays and their optical properties for resource-saving solar cells (2014) (10)
- Macroscopic electronic behavior and atomic arrangements of GaAs surfaces immersed in HCl solution (1994) (10)
- Magnetophonon Resonance in Epitaxial n-InP in High Pulsed Magnetic Fields (1984) (10)
- Natural formation of multiatomic steps on patterned vicinal substrates by MOVPE and application to GaAs QWR structures (1998) (10)
- Step-flow growth and fractional-layer superlattices on GaAs vicinal surfaces by MOCVD (1991) (10)
- (AlAs)12(GaAs)12 Fractional-layer superlattices grown on (001) vicinal GaAs substrates by MOCVD (1990) (10)
- Micro-photoluminescence spectroscopy study of high-quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy (2008) (10)
- Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy (1998) (10)
- Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates (2002) (10)
- Impurity‐induced disordering in fractional‐layer growth on a (001) vicinal surface by metalorganic chemical vapor deposition (1990) (10)
- Comparison between Atmospheric and Reduced Pressure GaAs MOCVD (1982) (9)
- Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes: selective area metal organic vapor phase epitaxy. (2005) (9)
- Study on High Specific Power Micro-Stirling Engine (1999) (9)
- Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene (2018) (9)
- MOVPE selectively grown GaAs nano-wires with self-aligned W side gate (2004) (9)
- Optically Induced Low Photoluminescence Regions in InGaAsP (1979) (8)
- Wavelength selective photoexcitation of picosecond acoustic-phonon pulses in a triple GaAs/Al0.3Ga0.7As quantum well structure (2002) (8)
- GaAs tetrahedral quantum dots grown by selective area MOCVD (1992) (7)
- Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer (2016) (7)
- Investigation of Optical Magnetic Flux Generation in Superconductive YBCO Strip-Line (2002) (7)
- Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy (2013) (7)
- Fabrication and transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy (1998) (7)
- Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors (2002) (7)
- Large positive magnetoresistance in periodically modulated two-dimensional electron gas formed on self-organized GaAs multiatomic steps (2000) (7)
- Aharonov–Bohm Oscillations in Photoluminescence from Charged Exciton in Quantum Tubes (2007) (7)
- Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy (2011) (7)
- Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures (2016) (7)
- Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy (2000) (7)
- Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates (1995) (6)
- Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy (1996) (6)
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping (1976) (6)
- Self-formed quantum nano-structures by selective area MOVPE and their application to GaAs single electron devices (2000) (6)
- Formation of GaAs wire structures and position-controlled In0.8Ga0.2As quantum dots on SiO2-patterned vicinal (001) GaAs substrates (2004) (6)
- Ferromagnetic MnAs Nanocluster Composites Position-Controlled on GaAs (111)B Substrates toward Lateral Magnetoresistive Devices (2011) (6)
- MOCVD growth of AlAs1−xPx lattice-matched to GaAs and AlAs1−xPx-GaAs superlattices (1984) (6)
- Optical Anisotropy in InAs Quantum Dots Formed on GaAs Pyramids (2001) (6)
- Self-Limited GaAs Wire Growth by Movpe and Application to InAs Quantum Dot Array (1999) (6)
- Pyramidal quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy (1996) (6)
- Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD (1984) (6)
- Self-organized microstructure growth (1995) (6)
- Metal–Organic Vapor Phase Epitaxial Growth Condition Dependences of MnAs Nanocluster Formation on GaInAs (111)A Surfaces (2008) (6)
- Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates (1999) (5)
- Lateral thickness modulation of InGaAs layers on GaAs in selective area metalorganic vapor phase epitaxy (2001) (5)
- Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy (2012) (5)
- InGaAs-InP core–shell nanowire/Si junction for vertical tunnel field-effect transistor (2020) (5)
- Effect of porosity on strength of zirconia refractory. (1988) (5)
- Ultrafast optical magnetic flux generation and the improved THz-imaging (2003) (5)
- Growth and characterization of GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes (2005) (5)
- Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides (2005) (5)
- Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs(111)B substrates using flow-rate modulation mode (2005) (5)
- Step-flow growth and fractional-layer superlattices on ()B GaAs vicinal surfaces (1991) (5)
- Atomic structure studies of (113)B GaAs surfaces grown by metalorganic vapor phase epitaxy (1998) (5)
- III–V Semiconductor Nanowires on Si by Selective-Area Metal-Organic Vapor Phase Epitaxy (2012) (5)
- Two-way current switch using Coulomb blockade in GaAs quantum dots by selective area metalorganic vapor phase epitaxy (2002) (4)
- Distribution of optically-generated vortices in YBCO thin film strips (2001) (4)
- The initial stage of InGaAs growth by MOVPE on multiatomic-stepped GaAs structures (2001) (4)
- Knowledge exploratory project for nanodevice design and manufacturing (2010) (4)
- Growth of GaAs and InGaAs nanowires by utilizing selective area MOVPE (2004) (4)
- Effect of growth interruption time and growth temperature on the natural formation of InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates (2000) (4)
- Transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy (1998) (4)
- Novel in situ optical monitoring method for selective area metalorganic vapor phase epitaxy (1996) (4)
- Study on High Specific Power Micro Stirling Engine. (1999) (4)
- Optical evidence for Aharonov-Bohm effect in quantum tubes (2008) (4)
- Mobility anisotropy and magnetoresistance at an (InAs)1(GaAs)1–InP heterointerface grown on a (001) vicinal InP substrate (1987) (4)
- Baking Effect on the Surface Morphology of GaAs–AlGaAs LPE (1977) (4)
- Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes (2020) (4)
- Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth (1998) (4)
- Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE (2004) (3)
- Advances in steep-slope tunnel FETs (2016) (3)
- Acoustic phonon pulse generation and detection in GaAs/Al0.3Ga0.7As quantumwells (2004) (3)
- Theoretical and experimental investigation of an electron interference device using multiatomic steps on vicinal GaAs surfaces (1996) (3)
- Terahertz characterization of propane hydrate (2019) (3)
- Ultra High Vacuum Scanning Tunneling Microscopy Observation of Multilayer Step Structure on GaAs and AlAs Vicinal Surface Grown by Metalorganic Vapor Phase Epitaxy (1996) (3)
- Photonic crystal slabs with hexagonal air holes fabricated by selective area metal organic vapor phase epitaxy (2007) (3)
- One- and Two-Dimensional Spectral Diffusions in InP/InAs/InP Core–Multishell Nanowires (2009) (3)
- Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs (2010) (3)
- Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP (1979) (3)
- Bimolecular interlayer scattering of electrons in InP/InAs/InP core–multishell nanowires (2013) (3)
- Spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowires (2010) (3)
- Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applications (2002) (3)
- InGaAs/Si Heterojunction Tunnel FET with Modulation-doped Channel (2016) (2)
- Drain-Current Deep Level Transient Spectroscopy Study of Carrier Emission Process from InAs Quantum Dots in GaAs Narrow-Wire Field Effect Transistors (2007) (2)
- Self-ordered quantum dots: A new growth mode on high-index semiconductor surfaces (1996) (2)
- Density of states of AlAs/GaAs fractional layer superlattice quantum wires in a modulation doped structure (1992) (2)
- Ultra high vacuum scanning tunneling microscope observation of vicinal (001) GaAs surface and (117)B GaAs surface grown by metalorganic vapor phase epitaxy (1997) (2)
- Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces (2000) (2)
- Microcavity structures in single GaAs nanowires (2008) (2)
- Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth (2001) (2)
- Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate (1991) (2)
- Growth of Semiconductor Nanocrystals (2015) (2)
- (InAs)1(GaAs)1 monolayers on InP(001) studied by x-ray absorption fine structure (1989) (2)
- Relationship Between Cutting-Edge Hardness and Tool Life for Alloy-Steel Bit in Machine Boring of MDF (1998) (2)
- Novel Nano-Faceting Structures Grown on Patterned Vicinal (110) GaAs Substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE) (2000) (2)
- Origin of persistent photoconductivity in n-InP/GaInAs two-dimensional electron gas (1986) (2)
- Growth of GaAs Nanowires on Poly-Si by Selective-Area MOVPE (2011) (2)
- Influence of TiN Coating on the Rolling Contact Fatigue Strength of Mild Steel (1996) (2)
- Magnetic properties of hexagonal MnAs nanoclusters formed on GaInAs (1 1 1) surfaces by metal-organic vapor phase epitaxy (2007) (2)
- Correction to Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires (2012) (2)
- Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (1 0 0) and (3 1 1)B substrates (1999) (2)
- (Invited) Growth of InAs/InAlAs Core-Shell Nanowires on Si and Transistor Application (2011) (2)
- Optical response of BSCCO thin film in superconducting state (2002) (2)
- III-V compound semiconductor nanowire solar cells (2013) (2)
- Effect of Pressure Drop Owing to Friction between Pipe Inner Wall and Water on Non-equilibrium Flow Fields in an Air-lifting Pipe. Fundamental study on lifting system for mining marine mineral resources. (1997) (2)
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure (1979) (2)
- A morphological and acoustic study on the effect of a trumpet player's vocal tract (2013) (2)
- Vertical III-V Nanowire-Channels On Si (2013) (1)
- SIMULTANEOUS ENHANCEMENT OF WATER VAPOR AND SILICATE DUST IN THE INNER SOLAR NEBULA: IMPLICATION FOR THE SMALL OXYGEN ISOTOPIC VARIATION OF CHONDRULES (2008) (1)
- Time- and spectrally-resolved PL study of a regular array of InP/InAs/InP core-multishell nanowires (2007) (1)
- Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si (2013) (1)
- Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE (2003) (1)
- Spectral diffusion of type-II excitons in wurtzite InP/InAs/InP core-multishell nanowires (2009) (1)
- Fractional superlattices and their device applications (1993) (1)
- Terahertz Ultrasonic Generation and Detection in GaAs/AlGaAs Quantum Wells (2005) (1)
- Graphene: Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs (Adv. Mater. 47/2013) (2013) (1)
- Transient band‐bending in InP/InAs/InP core‐multishell nanowires (2009) (1)
- Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE (2004) (1)
- Growth and Optical Properties of 2D Photonic Crystals Based on Hexagonal GaAs/AlGaAs Pillar Arrays by Selective-Area Metalorganic Vapor Phase Epitaxy (2003) (1)
- Effect of Boron, Oxygen, Sulphur, Nickel, Copper and Zirconium on Austenite Grain Size of Steels (1973) (1)
- New gaseous impurity and its effect on the purity of LPE GaAs (1978) (1)
- Photoluminescence from Single Hexagonal Nano-Wire Grown by Selective Area MOVPE (2005) (1)
- Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces (2000) (1)
- Research on Pitting Strength under Rolling Contact of White Cast Iron (1973) (1)
- Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors (2003) (1)
- Catalyst‐free growth of semiconductor nanowires by selective area MOVPE (2005) (1)
- Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate (2012) (1)
- (Invited) Vertical III-V Nanowire-Channel on Si (2013) (1)
- Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices (1999) (1)
- Nonsteady Behaviour of Free Surface Configuration and Velocity Distribution in a Flow Field of Molten Steel in a Mold (1996) (1)
- (Invited) Transistor Applications Using Vertical III-V Nanowires on Si Platform (2017) (1)
- Spectroscopy and imaging of GaAs/InGaAs/GaAs nanowires grown by selective‐area metalorganic vapor phase epitaxy (2008) (1)
- Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy (2002) (1)
- Selectively formed GaAs quantum nanostructures and their application to single electron integrated circuits (2006) (1)
- Steep-Slope Tunnel FET using InGaAs-InP Core-Shell Nanowire/Si Heterojunction (2015) (0)
- Scanning and reading process for flat color images (1982) (0)
- Longitudinal and transverse exciton spin relaxation times in single InP/InAsP/InP nanowire quantum dots (2011) (0)
- Surface Roughness Control of VHF-DC Superimposed Magnetron Sputtering (2015) (0)
- Non-equilibrium cyclotron resonances in GaInAs/InP two-dimensional electron gas (1986) (0)
- Self organization in InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates (1999) (0)
- 1-bit BDD full adder circuit using single electron transistors by selective area metalorganic vapor phase epitaxy (2003) (0)
- Heteroepitaxy of Vertical InAs Nanowires on Thin Graphitic Films (2011) (0)
- Cosmetic O emulsion (2010) (0)
- The influence of work hardening on the rolling contact fatigue strength of high manganese austenitic steel. (1987) (0)
- Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)InP Surfaces Studied by UHV Scanning Tunneling Microscope (1996) (0)
- cosmetic emulsion of O / W (2010) (0)
- First Demonstration of Tunnel Field-Effect Transistor Using InGaAs/Si Junction (2012) (0)
- Quantum Wire Formations by Crystal Growth (2010) (0)
- Selective growth of MOVPE on AlGaAs/GaAs patterned substrates for quantum nano-structures (1996) (0)
- 4-4 Monocolor Recording Methods (1973) (0)
- Fabrication and characterization of semiconducting and ferromagnetic nanostructures on crystallized Al2O3 layers (2018) (0)
- Taper Growth of GaAs–AlGaAs Layers by Wipingless LPE (1977) (0)
- Organometallic VPE Growth of InAs1-x-ySbxPy on InAs (1981) (0)
- Anisotropic magneto-transport properties of 70 nm-period lateral surface superlattices in high magnetic fields (2001) (0)
- Influence of Solution Treatment on Rolling Contact Fatigue Strength of Mild Steel. (1995) (0)
- Optical Parameters of Gas Hydrates for Terahertz Applications (2020) (0)
- A tunnel high-electron mobility transistor (t-HEMT) (2016) (0)
- Structural and Optical Properties of Wurtzite InP/AlInP Core-Multishell Nanowires (2016) (0)
- Erratum: “Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy” [Appl. Phys. Lett. 89, 203110 (2006)] (2008) (0)
- Origin of Substrate Heating During Oxide Film Deposition by DC Magnetron Discharge and Superposition of VHF Power (2015) (0)
- MOCVD Methods for Fabricating Quantum Wires and Quantum Boxes (1990) (0)
- Selective‐area MOVPE of GaSb on GaAs (111)‐oriented substrates (2011) (0)
- Experimental Study of Deformation Process of a Water Droplet Impinging on Polished and Rough Surfaces Heated to above the Leidenfrost Temperature (1996) (0)
- Pyramidal Quantum Dot Structures Fabricated Using Selective Area MOCVD (1995) (0)
- 23pRB-6 EXCITON POLARIZATION IN A SINGLE NANOWIRE QUANTM DOT (2011) (0)
- MOCVD Methods for Fabricating Semiconductor Nano-Structures (1992) (0)
- Fabrication of InP and InGaAs air-hole type Two-dimensional Photonic Crystals by Selective Area MOVPE (2005) (0)
- Self-organization phenomenon of strained InGaAs grown on InP (311) substrates by metalorganic vapor phase epitaxy (1995) (0)
- Probing electron wavefunctions in quantum wells using ultrafast coherent acoustic phonon generation (2004) (0)
- III-V Semiconductor Nanowire Light Emitting Diodes and Lasers (2011) (0)
- Rolling contact fatigue strength of high manganese austenitic steel containing Cr or Ni. (1988) (0)
- Influence of Heat Treatment on Machinability of High Chromium Cast Iron (1996) (0)
- P2-45 Terahertz ultrasonic generation and detection in GaAs/AlGaAs quantum wells(Short presentation for poster) (2004) (0)
- Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System (2014) (0)
- Quantum dots fabricated by selective area MOVPE and their application to single electron devices (1999) (0)
- Largepositivemagnetoresistanceinperiodicallymodulated two-dimensionalelectrongasformedonself-organized GaAsmultiatomicsteps (2000) (0)
- Lasing in GaAs-based nanowires grown by selective-area MOVPE (2010) (0)
- Growth of III-V Semiconductor Nanowires and Their Photovoltaic Application (2018) (0)
- Alternatives for High Strength Materials in Sour Environments (2005) (0)
- Theoretical study on the photonic crystal slabs with hexagonal optical atoms (2004) (0)
- Influence of Solution Treatment Temperature on the Rolling Contact Fatigue Strength of Mild Steel. (1992) (0)
- Formation and characterization of semiconductor nanostructures (2001) (0)
- Smooth Criminals in the Late Nineteenth-Century U.S. : An Alger Hero's Possible Fall from Grace (2010) (0)
- Magneto-Optics of GaAs Quantum Wire Lattices Grown by Selective-Area MOVPE (2006) (0)
- MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces (2007) (0)
- Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes (2020) (0)
- Optical Parameters of Gas Hydrates for Terahertz Applications (2019) (0)
- Fabrtcation of Quantum Nanostructures by Selective Area MOVPE and Their Device Application : Fabrication of Quantum Nanostructures and Their Device Application (2002) (0)
- III-V/Si heterojunctions for steep subthreshold-slope transistor (2013) (0)
- Selective-area growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si and tunneling transistor application (2016) (0)
- Fabrication of Narrow Two-Dimensional Electron Gas Channels in GaAs/AlGaAs Sidewall Interfaces by Selective Growth (1987) (0)
- Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy (1999) (0)
- Formation of oxygen isotopic heterogeneity among chondritic constituents due to radial gas-dust fractionation in protoplanetary disks (2006) (0)
- Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces (1995) (0)
- III-V semiconductor hetero-structure nanowires by selective area MOVPE (2007) (0)
- Fabrication of InAs Nanowire Vertical Surrounding-Gate Field Effect Transistor on Si Substrates (2009) (0)
- Mechanism Examination in Surface Roughness Improvement of VHF-DC Superimposed Magnetron Sputtering (2016) (0)
- Formation of III-V Compound Semiconductor Nanowires by using Selective-area MOVPE (2008) (0)
- Electrical Characterization of InGaAs nanowire MISFETs Fabricated by Dielectric-first Process (2010) (0)
- Fabrication and characterization of periodic nano-faceting structures on patterned vicinal [110] GaAs substrates by MOVPE (2000) (0)
- Formation of InP and InGaAs Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal–Organic Vapor Phase Epitaxy (2008) (0)
- (Invited) Recent Progress in Vertical Si/III-V Tunnel FETs: From Fundamentals to Current-Boosting Technology (2016) (0)
- Influence of Lead and Sulphur Addition on Machinability of High Chromium Cast Iron (1999) (0)
- Phase Transition from Zinc Blende to Wurtzite and Green Emission of AlInP Grown on (10-10) GaN by Crystal Structure Transfer Epitaxy (2016) (0)
- Oxygen Isotopic Evolution in the Early Solar Nebula: Validation of the H2O Transport Model (2008) (0)
- Publisher's Note: Acoustic phonon generation and detection in GaAs/ Al 0.3 Ga 0.7 As quantum wells with picosecond laser pulses [Phys. Rev. B 71, 115330 (2005)] (2005) (0)
- Origin of Persistent Photoconductivity in n-InP/GaInAs Two Dimensional Electron Gas (1985) (0)
- Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth (1997) (0)
- The Relation between Analog Images and Digital Images (1985) (0)
- 搬送誤差計測方法、校正方法、描画方法、露光描画方法、描画装置及び露光描画装置 (2005) (0)
- The effect of imperfect sticking on the collisional growth of dust in the Jovian subnebula (2004) (0)
- Picosecond acoustics in semiconductor quantum wells (Invited Paper) (2005) (0)
- Formation of nanostructures by selective-area MOVPE and their applications (2005) (0)
- Ideal Crystal Growth from Kink Sites and Fractional-Layer Growth on GaAs Vicinal Substrate by MOCVD (1991) (0)
- Fabrication of the Photonic Crystal Slabs with Hexagonal Optical Atoms by Selective-area Metal-organic-vapor-phase Epitaxy (2005) (0)
- Method of manufacturing dielectric ceramic composition and method of manufacturing electronic component (2001) (0)
- Fine-structure Semiconductor Crystals and Electron Wave Interference Devices (1990) (0)
- Microscopic Modelling of Interference Processes in On-facet Quantum Wires (1988) (0)
- Near-Infrared Lasers in GaAs/GaAsP Coaxial Core-Shell Nanowires (2008) (0)
- Fabrication of III-V semicondctor nanowires by SA-MOVPE and their applications to photonic and photovoltaic devices (2010) (0)
- III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session) (2008) (0)
- Deposition Rate Evaluation of VHF-DC Superimposed Magnetron Sputter (2015) (0)
- III–V Nanowires: Transistor and Photovoltaic Applications (2017) (0)
- Longitudinal Magnetophonon Resonance in n -Type InP in Ohmic and Hot Electron Region (1985) (0)
- Integration of InGaAs Nanowire Vertical Surrounding-Gate Transistors on Si (2011) (0)
- Magnetic flux letters visualized by a laser-terahertz emission microscope (2004) (0)
- Growth and Characterization of Wurtzite InP/AlInP Core-Shell Nanowires (2015) (0)
- Epitaxy on High-Index Surfaces: A Key to Self-Organizing Quantum-Wires and Dots (1995) (0)
- [INVITED]Selective Area Growth Mechanisms of Compound Semiconductor Nanowires (2013) (0)
- Spectroscopy and Imaging of GaAs/InGaAs/GaAs Nanowires Grown by Selective-area Metalorganic Vapor Phase Epitaxy (2008) (0)
- Acoustic Modes of GaAs Nanopillars Studied with Ultrashort Optical Pulses GaAs (2010) (0)
- Formation of 1μm-period GaAs Kagome Lattice Structure by Selective Area Metalorganic Vapor Phase Epitaxy (2003) (0)
- A process for preparing a ceramic composition and process for the production of an electronic device (2001) (0)
- Optical properties of In/sub 0.8/Ga/sub 0.2/As self-assembled quantum dots on SiO/sub 2/-patterned [001] vicinal GaAs substrates (2003) (0)
- Growth Direction Control and Magnetic Characterizations of MnAs Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy (2008) (0)
- Electrical spin injection from ferromagnet into an InAs quantum well (2018) (0)
- [Isamu Akasaki Award Speech] Pioneering study on compound semiconductor nanostructure fabrication and its nano-electronics application (2017) (0)
- Vibrations of nanostructures probed by ultrashort optical pulses ������������������� � (2009) (0)
- Radial redistribution of solids in an accreting protoplanetary disk: On the effect of variation in adhesive properties between H2O ice and silicate (2007) (0)
- GaAs quantum dots by MOCVD (1992) (0)
- Polarization-Dependent Optical Nonlinearities in GaAs/AlGaAs Fractional Layer Superlattices (1992) (0)
- Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE (2000) (0)
- Color scanner system for customized edition of color separations (1982) (0)
- Excitation-power-density-dependent micro-photoluminescence from selective-area-grown hexagonal nanopillars with single InGaAs/GaAs quantum well on the GaAs (111)B substrate (2007) (0)
- In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface (1997) (0)
- Chapter 14: III–V Nanowires: Transistor and Photovoltaic Applications (2016) (0)
- III-V Semiconductor Epitaxial Nanowires and Their Applications (2008) (0)
- Fabrication of Semiconductor Quantum Dots (1991) (0)
- One-dimensional and Two-dimensional Spectral Diffusion in InP/InAs/InP Core-Multishell Nanowires (2008) (0)
- Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure (2020) (0)
- Mechanism of Multiatomic Step Formation during MOCVD Growth of GaAs on (001) Vicinal Substrate Studied by Atomic Force Microscopy (1993) (0)
- A method for determining blurred photographic images (1982) (0)
- Material mixing in a protoplanetary disk formed by the collapse of a molecular cloud core (2011) (0)
- 10/sup 5/ times biasing current improvement in an electron wave interference device with vertical superlattices (1989) (0)
- Fabrication of GaAs/AlGaAs Quantum Dots by Metal-Organic Vapor Phase Epitaxy on Patterned GaAs Substrates (1994) (0)
- (Invited) Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions (2014) (0)
- Polarization-Dependent Optical Absorption in (AlAs)1/2(GaAs)1/2 Fractional-Layer Superlattice Grown by MOCVD (1990) (0)
- Formation of 0.5 /spl mu/m-period GaAs network structures for two-dimensional photonic crystals by selective area metal-organic vapor phase epitaxy (2000) (0)
- Fabrication of One- or Double- row Aligned Self-organized Quantum Dots by Utilizing SiO2-patterned Vicinal (001) GaAs Substrates (2002) (0)
- Quantum Wires and Dots by MOCVD (I) (1998) (0)
- Influence of grain size on rolling contact fatigue strength of high manganese austenitic cast steel. (1988) (0)
- Lateral Thickness Modulation of InGaAs/GaAs Structures by Selective Area MOVPE (2000) (0)
- Research on Pitting Strength under Rolling Contact of a Structual Mild Steel (1969) (0)
- Selective-area Growth of the Hexagonal Nano-pillars with Single InGaAs/GaAs Quantum Well and Their Temperature-dependence Photoluminescence (2006) (0)
- Superlattice Structure Observation for (AlAs) _ (GaAs)_ Grown on (001) Vicinal GaAs Substrates : Semiconductors and Semiconductors Devices (1988) (0)
- InGaP Nanowires grown by Selective-Area MOVPE (2012) (0)
- Fabrication of III-V Nanowire-Based Surrounding-Gate Transistors on Si Substrate (2011) (0)
- III-V nanowire channel on Si: From high-performance vertical FET to steep-slope devices (2015) (0)
- Novel Step Height Reduction Phenomenon during Alkyl-Desorption Limited Atomic Layer Epitaxial Growth on Vicinal Substrate (1993) (0)
- FOREWORD ( Quantum Dot Structures) (1997) (0)
- Polarized photoluminescence of fractional layer superlattices (1992) (0)
- Optical properties and application of MOVPE-grown III-V nanowires (2010) (0)
- A Majority-Logic Device Using a Single-Electron Box (2002) (0)
- Selective-Area Growth of InGaAs Nanowires on Ge(111) Substrate (2016) (0)
- Growth and Characterization of GaAsP Nanowires on GaAs(111)B Substrate by Selective-Area Metal Organic Vapor Phase Epitaxy (2010) (0)
- Integration of Vertical InAs Nanowires on Ge(111) by Selective-Area MOVPE (2014) (0)
- GaAs Tetrahedral Quantum Dots: Towards a Zero-Dimensional Electron-Hole System (1990) (0)
- Wurtzite AlInP grown on GaN (10-10) and green emission (2016) (0)
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties (1996) (0)
- Fabrication of III–V semiconductor core-shell nanowires by SA-MOVPE and their device applications (2010) (0)
- Catalyst-free Growth and FET Application of (InGa) As Nanowires (2008) (0)
- From Whisker to Nanowire (2008) (0)
- GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy (2005) (0)
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps (1998) (0)
- アライメント部の校正方法と、アライメント校正可能な描画装置と、搬送装置 (2004) (0)
- A consideration on Teaching of Metal Processing in Technical Education (1989) (0)
- Structural and optical characterization of wurtzite InP/AlInP core-multishell nanowires (2016) (0)
This paper list is powered by the following services:
What Schools Are Affiliated With Takashi Fukui?
Takashi Fukui is affiliated with the following schools:
