Takashi Mukai
#162,881
Most Influential Person Now
Takashi Mukai's AcademicInfluence.com Rankings
Takashi Mukaiengineering Degrees
Engineering
#7089
World Rank
#8451
Historical Rank
Electrical Engineering
#2182
World Rank
#2288
Historical Rank
Applied Physics
#2384
World Rank
#2425
Historical Rank
Download Badge
Engineering
Takashi Mukai's Degrees
- PhD Electrical Engineering University of Tokyo
- Masters Electrical Engineering University of Tokyo
- Bachelors Electrical Engineering University of Tokyo
Why Is Takashi Mukai Influential?
(Suggest an Edit or Addition)Takashi Mukai's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes (1994) (3269)
- Surface-plasmon-enhanced light emitters based on InGaN quantum wells (2004) (1324)
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes (1995) (943)
- Thermal Annealing Effects on P-Type Mg-Doped GaN Films (1992) (870)
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes (1999) (671)
- White light emitting diodes with super-high luminous efficacy (2010) (627)
- High‐power InGaN/GaN double‐heterostructure violet light emitting diodes (1993) (613)
- High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes (1994) (387)
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates (2006) (346)
- Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy (2005) (339)
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode (2002) (338)
- Blue InGaN-based laser diodes with an emission wavelength of 450 nm (2000) (249)
- 510–515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate (2009) (246)
- Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip (2002) (232)
- Ultra-High Efficiency White Light Emitting Diodes (2006) (195)
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates (2000) (190)
- In situ monitoring and Hall measurements of GaN grown with GaN buffer layers (1992) (185)
- Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor (2003) (180)
- High-Quality InGaN Films Grown on GaN Films (1992) (179)
- Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes (1998) (177)
- Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature (2011) (167)
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates (1998) (164)
- Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well (2002) (159)
- InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films (1993) (156)
- Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection (2008) (155)
- Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates (1999) (153)
- Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures (1998) (146)
- Efficient radiative recombination from -oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique (2004) (144)
- High-power UV InGaN/AlGaN double-heterostructure LEDs (1998) (129)
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode (1999) (129)
- Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells (2010) (125)
- Recent progress of high efficiency white LEDs (2007) (117)
- Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage (2007) (111)
- Epitaxial growth and optical properties of semipolar (112¯2) GaN and InGaN∕GaN quantum wells on GaN bulk substrates (2006) (103)
- Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage (2006) (98)
- 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy (2003) (93)
- Wavelength Dependence of InGaN Laser Diode Characteristics (2001) (88)
- Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer (1999) (86)
- Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells (2008) (84)
- Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate (2009) (82)
- High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure (2002) (79)
- Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors (2006) (78)
- Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips (2008) (77)
- Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers (2008) (77)
- Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams (2001) (76)
- Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes (2000) (74)
- Optical and structural studies in InGaN quantum well structure laser diodes (2001) (73)
- Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy (2002) (73)
- High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics (2014) (73)
- Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes. (2007) (73)
- Prismatic stacking faults in epitaxially laterally overgrown GaN (2006) (72)
- Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112¯2} microfacets (2005) (71)
- Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes (2004) (69)
- Confocal microphotoluminescence of InGaN-based light-emitting diodes (2005) (65)
- Radiative and nonradiative recombination processes in GaN-based semiconductors (2001) (65)
- Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting (2008) (63)
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary AlxInyGa(1-x-y)N (2001) (58)
- Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures (2006) (58)
- High-power and wide wavelength range GaN-based laser diodes (2006) (57)
- Recent progress in group-III nitride light-emitting diodes (2002) (56)
- Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence (2018) (55)
- Characteristics of InGaN laser diodes in the pure blue region (2001) (54)
- High-output-power deep ultraviolet light-emitting diode assembly using direct bonding (2016) (52)
- Ultraviolet GaN Single Quantum Well Laser Diodes (2001) (51)
- Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy (2003) (50)
- Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells (2007) (49)
- Surface plasmon enhanced bright light emission from InGaN/GaN (2007) (48)
- Recent progress of AlInGaN laser diodes (2005) (45)
- Study of GaN-based Laser Diodes in Near Ultraviolet Region (2002) (44)
- Recent progress of nitride‐based light emitting devices (2003) (43)
- Recent progress of high-power GaN-based laser diodes (2007) (42)
- Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets (2005) (42)
- Gain suppression phenomena observed in InxGa1-xN quantum well laser diodes emitting at 470 nm (2006) (40)
- Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate (2007) (38)
- InGaN‐based 518 and 488 nm laser diodes on c‐plane GaN substrate (2010) (37)
- Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN (2006) (36)
- A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes (2005) (36)
- Recent status of white LEDs and nitride LDs (2008) (33)
- White LEDs for solid state lighting (2004) (31)
- Additive color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets (2007) (30)
- In inhomogeneity and emission characteristics of InGaN (2001) (30)
- CW Operation of the First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes (2006) (29)
- Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts (2004) (28)
- GaN‐Based Light‐Emitting Diodes and Laser Diodes, and Their Recent Progress (2001) (27)
- Recent development of nitride LEDs and LDs (2009) (27)
- Efficient green emission from (11(2)over-bar2) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy (2007) (27)
- Current status and future prospects of GaN-based LEDs and LDs (2004) (26)
- GaN films deposited by planar magnetron sputtering (2002) (25)
- Investigation of optical-output-power degradation in 365-nm UV-LEDs (2006) (25)
- Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structure (2003) (25)
- Hydrogen Dissociation from Mg-doped GaN (2004) (25)
- Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells (2006) (25)
- Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illumination-Collection Mode (2001) (24)
- GaN‐based high‐output‐power blue laser diodes for display applications (2007) (24)
- Silicon p-n junction photodiodes sensitive to ultraviolet radiation (1979) (24)
- Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range (2007) (21)
- InGaN-based UV/blue/green/amber LEDs (1999) (21)
- GaN-based laser diodes emitting from ultraviolet to blue-green (2003) (21)
- Blue-Violet Nitride Lasers (2002) (20)
- Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage (2008) (20)
- High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors (2002) (20)
- Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm (2001) (20)
- Effects of internal electrical field on transient absorption in InxGa1-xN thin layers and quantum wells with different thickness by pump and probe spectroscopy (2003) (19)
- Recombination dynamics in low‐dimensional nitride semiconductors (2003) (19)
- Expanding Emission Wavelength on Nitride Light-Emitting Devices (2002) (19)
- Effects of air-based nonequilibrium atmospheric pressure plasma jet treatment on characteristics of polypropylene film surfaces (2020) (18)
- Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm (2003) (18)
- 67.4: GaN‐Based High‐Power Blue Laser Diodes for Display Applications (2006) (18)
- Observation of optical instabilities in the photoluminescence of InGaN single quantum well (2006) (18)
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy (2004) (17)
- Optical nonlinearities and phase relaxation of excitons in GaN (2002) (17)
- Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures (2007) (17)
- Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes (2008) (17)
- Strain states in semipolar III-nitride semiconductor quantum wells (2010) (17)
- Optical properties of Si‐, Ge‐ and Sn‐doped GaN (2003) (17)
- Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser (2001) (17)
- InGaN/GaN/AlGaN-Based Leds and Laser Diodes (1998) (17)
- 52.3: High ‐ Power InGaN Blue ‐ Laser Diodes for Displays (2005) (16)
- Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal (2002) (16)
- Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells (2010) (16)
- Exciton-exciton interaction and heterobiexcitons in GaN (2003) (16)
- 高出力255/280/310nm深紫外発光ダイオードとその寿命特性 (2014) (16)
- Surface plasmon enhanced super bright InGaN light emitter (2005) (14)
- Dislocation Reduction Mechanism in Low-Nucleation-Density GaN Growth Using AlN Templates (2007) (14)
- High-Power Pure Blue InGaN Laser Diodes (2009) (14)
- Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near‐field photoluminescence spectroscopy (2006) (13)
- Nondegenerated pump and probe spectroscopy in InGaN-based semiconductors (2002) (13)
- Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer (2002) (13)
- Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers (2017) (12)
- Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes (2006) (12)
- Characteristics of Laser Diodes Composed of GaN‐Based Semiconductor (2002) (12)
- Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations (2007) (12)
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen (2005) (11)
- Comparison between AlGaN surfaces etched by carbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface (2015) (11)
- Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage (2009) (10)
- Localized exciton dynamics in InGaN quantum well structures (2002) (9)
- Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy (2012) (8)
- First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes by Current Injection (2006) (8)
- Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics (2005) (8)
- Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers (2006) (7)
- Proton radiation effects in nitride lasers and light emitting diodes (2007) (7)
- Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas (2013) (7)
- Progress of high-power deep-ultraviolet LEDs (2015) (7)
- Surface analysis of n‐GaN crystal damaged by RF‐plasma‐etching with Ar, Kr, and Xe gases (2011) (7)
- Electroluminescence Mapping of InGaN‐based LEDs by SNOM (2002) (7)
- Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments (2015) (6)
- Optically pumped lasing and gain formation properties in blue Inx Ga1–x N MQWs (2004) (6)
- Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors (2001) (6)
- (Invited) High Output Power Deep Ultraviolet Light-Emitting Diodes with Hemispherical Lenses Fabricated Using Room Temperature Bonding (2016) (6)
- Degenerate four-wave-mixing spectroscopy on epitaxially laterally overgrown GaN: Signals from below the fundamental absorption edge (2001) (6)
- Direct observation of the nonradiative recombination processes in InGaN-based LEDs probed by the third-order nonlinear spectroscopy (2001) (5)
- Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas (2013) (5)
- Capacitively coupled radio frequency nitrogen plasma etch damage to N-type gallium nitride (2013) (5)
- GaN-based light-emitting diodes suitable for white light (2003) (5)
- Surface plasmon enhanced InGaN light emitter (2005) (5)
- Characterization of AlInGaN-based 405nm distributed feedback laser diodes (2008) (4)
- Effects of ultraviolet wavelength and intensity on AlGaN thin film surfaces irradiated simultaneously with CF4 plasma and ultraviolet (2019) (4)
- Near‐field photoluminescence study in violet light emitting InGaN single quantum well structures (2005) (4)
- Irradiation with narrowband-ultraviolet B suppresses phorbol ester-induced up-regulation of H1 receptor mRNA in HeLa cells (2016) (4)
- Etch-induced damage characteristics of n-GaN surfaces by capacitively coupled radio frequency He and Ar plasmas (2011) (4)
- Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium (2001) (4)
- Characteristics of TiO 2 thin films surfaces treated by O 2 plasma in dielectric barrier discharge with the assistance of external heating (2018) (4)
- AlGaN surfaces etched by CF4 plasma with and without the assistance of near-ultraviolet irradiation (2017) (4)
- High output power 365 nm ultraviolet LEDs and white LEDs (2005) (4)
- Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas (2014) (4)
- Degenerate four‐wave mixing spectroscopy of GaN films on various substrates (2006) (3)
- Application of Inertial and GNSS Integrated Navigation to Seabird Biologging (2021) (3)
- Structural and optical properties of MOCVD InAlN epilayers (2005) (3)
- 365-nm ultraviolet-light-emitting diodes with an output power of over 400 mW (2004) (3)
- Current-modulated electroluminescence spectroscopy and its application to InGaN single-quantum-well blue and green light-emitting diodes (2001) (3)
- 63.3: GaN‐Based 1‐W Continuous‐Wave Blue‐Laser Diodes (2008) (3)
- Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures (2001) (3)
- Scattering processes and dynamics of exciton-biexciton system in GaN (2003) (2)
- Multi-color light-emitting diodes based on GaN microstructures (2009) (2)
- Wide-bandgap group-III nitride lasers (2002) (2)
- Synergy Effect of Xenon Plasma Ions and Ultraviolet Lights on GaN Etch Surface Damage and Modification (2011) (2)
- Fabrication and characterization of GaN‐based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics [phys. stat. sol. (c) 2, No. 7, 2895–2898 (2005)] (2005) (2)
- Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals (2003) (2)
- Surface Analysis of AlGaN Treated with CF 4 and Ar Plasma Etching (2015) (1)
- Micro-PL analysis of high current density resonant tunneling diodes for THz applications (2021) (1)
- Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg (2003) (1)
- High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode (1999) (1)
- Crystal Structure of Low‐Resistance Au‐Ni/p‐GaN Contacts (2005) (1)
- Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-Ray Absorption Spectroscopy (2016) (1)
- The hot carrier dynamics in InGaN multi‐quantum well structure (2003) (1)
- Recombination Dynamics in In x Ga 1™ x N-Based Nanostructures (2005) (1)
- Semipolar InGaN/GaN Quantum Wells for Highly Functional Light Emitters (2008) (1)
- High color rendering and high luminous efficacy white light emitting diodes (2003) (1)
- Photocatalytic Activity Enhancement of Anatase/Rutile‐Mixed Phase TiO2 Nanoparticles Annealed with Low‐Temperature O2 Plasma (2021) (1)
- Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction (2000) (1)
- GaN-Based High-Output-Power Blue Laser Diodes (2008) (1)
- Characteristics of N2 and O2 Plasma‐Induced Damages on AlGaN Thin Film Surfaces (2017) (1)
- Effects of nonequilibrium atmospheric-pressure O2 plasma-assisted annealing on anatase TiO2 nanoparticles (2020) (1)
- Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment (2007) (1)
- Effect of Oxygen Plasma Irradiation on AlGaN Surface Properties (2016) (0)
- GaN Coupled Microring Lasers: Towards a Topological Laser Array (2022) (0)
- Wavelength Elongation of GaN-based Laser Diodes (2005) (0)
- Multicolor emission from InGaN/GaN three-dimensional quantum structures (2005) (0)
- Comparison between optical gain spectra of Inx Ga1–x N/In0.02Ga0.98N laser diodes emitting at 404 nm and 470 nm (2007) (0)
- Uncooled Si infrared photodetector for 2 μm wavelength using stimulated emission by dressed photons (2022) (0)
- High Luminous Light-Emitting Diodes for Automotive Headlamps Fabricated Using Surface Activated Bonding (2021) (0)
- Remote Bactericidal Effect of Anatase TiO2 Photocatalytic Nanoparticles Annealed with Low-Temperature O2 Plasma. (2022) (0)
- Hydride Vapor Phase Epitaxy of Thick GaN Layers on ScAlMgO 4 Substrates and their Self-Separation Process (2017) (0)
- Three-Dimensional Imaging of Threading Dislocations in GaN using Two-Photon-Excitation Photoluminescence Spectroscopy (2017) (0)
- Damage characteristics of n‐GaN thin film surfaces etched by N2 plasmas (2013) (0)
- Growth of thick GaN crystals on (000 1 ) GaN substrates by HVPE (2018) (0)
- Room-Temperature Continuous-Wave Lasing of A Violet GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection (2009) (0)
- Comparison of optical properties in GaN and InGaN quantum well structures (1999) (0)
- Study of long time-scale photoluminescence dynamics of Gan/InGaN quantum wells and comparison with samples grown on ELOG-GaN (2004) (0)
- Ultra high output power 365 nm ultraviolet light-emitting diodes (2004) (0)
- Development of Visible Range Semiconductor Laser Diodes Grown on c-Plane GaN Substrate (2010) (0)
- GaN-based violet laser diodes (2001) (0)
- High-Power Blue Laser Diodes for Displays (2007) (0)
- Current Status and Future Prospect of GaN-based Violet Laser Diodes (2008) (0)
- The light emitting device based on a gallium nitride compound semiconductor (1993) (0)
- Strain Relaxation Mechanisms in InGaN Epilayers (2005) (0)
- [JSAP Young Scientist Award Speech] Propagation Properties of Threading Dislocations in HVPE-grown GaN Observed by Two-Photon-Excitation Photoluminescence (2017) (0)
- Graphene/AlGaN Schottky barrier photodiodes and its application for array devices (2022) (0)
- Properties of quantum well excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, blue, green, and amber light emitting diode structures (1999) (0)
- Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation (2017) (0)
- Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells (2004) (0)
- UV and White Light LEDs (2014) (0)
- High Output Power 280-nm Deep Ultraviolet LED by Using AlGaN MQWs (2011) (0)
- Exciton–exciton correlation effects on FWM in GaN (2003) (0)
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_ N : Semiconductors (2001) (0)
- Advanced Development of GaN-Based UV-LED and UV-LD (2004) (0)
- GaN, AlN, InN and Related Materials (Materials Research Society Symposium Proceedings, vol 892) (2006) (0)
- HIGH-NA EUV LITHOGRAPHY: CURRENT STATUS AND OUTLOOK FOR THE FUTURE (Keynote) Harry Levinson, HJL Lithography, USA Keynote-12 DEVELOPMENT OF MASSIVE PARALLEL ELECTRON BEAM WRITE (MPEBW) SYSTEM : AIMING AT DIGITAL FABRICATION OF INTEGRATED CIRCUIT (Keynote) (2021) (0)
- The Trend of Light-Emitting Diodes (1999) (0)
- Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells (2004) (0)
- Uncooled Si infrared photodetector for 1.3-1.9 μm-wavelength using stimulated emission by dressed photons (2021) (0)
- Recombination mechanism in low-dimensional nitride semiconductors (2003) (0)
- The Electronic Nature of metal/p‐GaN Junctions (2005) (0)
- Effect of ultraviolet light-assisted CF4 plasma irradiation on AlGaN thin film surface (2016) (0)
This paper list is powered by the following services:
