Takeshi Ohshima
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Computer Science
Takeshi Ohshima's Degrees
- PhD Computer Science University of Tokyo
- Masters Computer Science Kyoto University
- Bachelors Computer Science Kyoto University
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(Suggest an Edit or Addition)Takeshi Ohshima's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Stimulated emission from nitrogen-vacancy centres in diamond (2016) (490)
- Quantum error correction in a solid-state hybrid spin register (2013) (456)
- Coherent control of single spins in silicon carbide at room temperature. (2014) (431)
- Isolated electron spins in silicon carbide with millisecond coherence times. (2014) (341)
- Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble. (2011) (315)
- A room temperature single photon source in silicon carbide (2013) (311)
- Observation of the Decay B0J (2007) (277)
- A silicon carbide room-temperature single-photon source. (2014) (211)
- Negative-U system of carbon vacancy in 4H-SiC. (2012) (186)
- High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide (2018) (149)
- Single-photon emitting diode in silicon carbide (2015) (149)
- Experimental implementation of assisted quantum adiabatic passage in a single spin. (2012) (145)
- Electrical and optical control of single spins integrated in scalable semiconductor devices (2019) (140)
- Divacancy in 4H-SiC. (2006) (136)
- Intrinsic defects in cubic silicon carbide (1997) (126)
- Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface (2017) (125)
- Detection of atomic spin labels in a lipid bilayer using a single-spin nanodiamond probe (2013) (119)
- Extending spin coherence times of diamond qubits by high-temperature annealing (2013) (116)
- Scalable quantum photonics with single color centers in silicon carbide (2016) (116)
- Multi-mode storage and retrieval of microwave fields in a spin ensemble (2014) (113)
- Nanomechanical Sensing Using Spins in Diamond. (2016) (106)
- Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers (2008) (100)
- Tolerance of Perovskite Solar Cell to High-Energy Particle Irradiations in Space Environment (2018) (88)
- Room temperature quantum emission from cubic silicon carbide nanoparticles. (2014) (87)
- Entanglement and control of single nuclear spins in isotopically engineered silicon carbide (2020) (84)
- Locking of electron spin coherence above 20 ms in natural silicon carbide (2016) (83)
- Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons (2009) (81)
- Degradation mechanisms of cable insulation materials during radiation–thermal ageing in radiation environment☆ (2011) (80)
- High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells (2001) (79)
- Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC (2002) (78)
- Magnetically sensitive nanodiamond-doped tellurite glass fibers (2018) (77)
- Quantum properties of dichroic silicon vacancies in silicon carbide (2017) (76)
- NV−–N+ pair centre in 1b diamond (2018) (74)
- Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation (2014) (73)
- ACHIEVEMENT OF HIGH FUSION PERFORMANCE IN JT-60U REVERSED SHEAR DISCHARGES (1997) (73)
- Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide. (2017) (71)
- Universal coherence protection in a solid-state spin qubit (2020) (66)
- Identification of the carbon antisite-vacancy pair in 4H-SiC. (2006) (65)
- Purcell enhancement of a single silicon carbide color center with coherent spin control. (2020) (65)
- Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles (2009) (60)
- Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide (2017) (60)
- EPR identification of intrinsic defects in SiC (2008) (59)
- Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation (2018) (56)
- Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device. (2019) (56)
- Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation (2015) (55)
- Radiation degradation characteristics of component subcells in inverted metamorphic triple‐junction solar cells irradiated with electrons and protons (2017) (55)
- Proton radiation analysis of multi-junction space solar cells (2003) (54)
- Electrically driven optical interferometry with spins in silicon carbide (2019) (51)
- Vector Magnetometry Using Silicon Vacancies in 4 H -SiC Under Ambient Conditions (2016) (51)
- Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide (2020) (51)
- Identification of Si-vacancy related room-temperature qubits in 4 H silicon carbide (2017) (50)
- Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride. (2018) (50)
- pH Nanosensor Using Electronic Spins in Diamond. (2019) (49)
- Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells (2001) (48)
- Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide (2001) (47)
- Bright and photostable nitrogen-vacancy fluorescence from unprocessed detonation nanodiamond. (2017) (47)
- Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance (2011) (47)
- Energetically deep defect centers in vapor-phase grown zinc oxide (2007) (46)
- Storage and retrieval of microwave fields at the single-photon level in a spin ensemble (2015) (46)
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin-Film Solar Cells (2002) (45)
- Zero-Field Magnetometry Based on Nitrogen-Vacancy Ensembles in Diamond (2018) (44)
- Towards a spin-ensemble quantum memory for superconducting qubits (2015) (43)
- Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation (2016) (43)
- Magnetometer with nitrogen-vacancy center in a bulk diamond for detecting magnetic nanoparticles in biomedical applications (2020) (42)
- Engineering the Interface: Nanodiamond Coating on 3D-Printed Titanium Promotes Mammalian Cell Growth and Inhibits Staphylococcus aureus Colonization. (2019) (42)
- Identification of the gallium vacancy-oxygen pair defect in GaN (2009) (41)
- Spectrally reconfigurable quantum emitters enabled by optimized fast modulation (2020) (40)
- EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC (2004) (40)
- Electron spin resonance detected by a superconducting qubit (2012) (39)
- Singlet levels of the NV− centre in diamond (2014) (39)
- Strongly coupled diamond spin qubits by molecular nitrogen implantation (2013) (39)
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide (2003) (39)
- LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell (2009) (37)
- Charge transfer and superconductivity in Nd(Ba1-xNdx)2Cu3O7+x prepared in high pressure oxygen (1992) (37)
- N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films (2003) (36)
- Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR (2005) (36)
- Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions (2019) (36)
- EPR identification of two types of carbon vacancies in 4H-SiC (2004) (35)
- Impact of Surface Functionalization on the Quantum Coherence of Nitrogen-Vacancy Centers in Nanodiamonds. (2017) (34)
- Enhanced Charge Collection by Single Ion Strike in AlGaN/GaN HEMTs (2013) (34)
- Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers (2019) (34)
- Erratum: Measurement of azimuthal asymmetries in inclusive production of hadron pairs in e+e− annihilation at s=10.58 GeV [Phys. Rev. D 78 , 032011 (2008)] (2012) (33)
- Recent results in JT-60 experiments (1989) (33)
- Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC (2007) (32)
- Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose (2003) (32)
- Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H - SiC (2020) (32)
- Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications (2018) (32)
- A Study of CP violation in B meson decays: Technical design report (1995) (31)
- In vivo imaging and tracking of individual nanodiamonds in drosophila melanogaster embryos. (2013) (31)
- Five-second coherence of a single spin with single-shot readout in silicon carbide (2021) (31)
- Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors (2013) (31)
- Bright single photon sources in lateral silicon carbide light emitting diodes (2018) (31)
- Study of \Omega_c^0 and \Omega_c^{*0} Baryons at Belle (2008) (31)
- Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study (2018) (30)
- ESR studies of incorporation of phosphorus into high-pressure synthetic diamond (1997) (30)
- Excitation properties of the divacancy in 4H -SiC (2018) (30)
- Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions (2013) (30)
- Activity and current status of R&D on space solar cells in Japan (2005) (27)
- Nanodiamond-polycaprolactone composite: A new material for tissue engineering with sub-dermal imaging capabilities (2016) (27)
- Monodisperse Five-Nanometer-Sized Detonation Nanodiamonds Enriched in Nitrogen-Vacancy Centers. (2019) (27)
- Radiation effect on pn-SiC diode as a detector (2005) (26)
- Influence of Irradiation on Defect Spin Coherence in Silicon Carbide (2019) (26)
- Effects of proton irradiation on n+p InGaP solar cells (2002) (25)
- Nanodiamond in tellurite glass Part II: practical nanodiamond-doped fibers (2014) (25)
- Tolerance of Perovskite Solar Cell to High-Energy Particle Irradiations in Space Environment (2018) (25)
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines (1998) (25)
- An ultra-thin diamond membrane as a transmission particle detector and vacuum window for external microbeams (2013) (25)
- Anomalous degradation in silicon solar cells subjected to high-fluence proton and electron irradiations (1997) (25)
- Single spin optically detected magnetic resonance with 60-90 GHz (E-band) microwave resonators. (2015) (24)
- EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites (2003) (24)
- Identification of divacancy and silicon vacancy qubits in 6H-SiC (2019) (24)
- Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation (1998) (24)
- Silicon carbide diodes for neutron detection (2020) (24)
- Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs (2009) (23)
- Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3 (2020) (23)
- Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement (2014) (23)
- Microwave-Free Vector Magnetometry with Nitrogen-Vacancy Centers along a Single Axis in Diamond (2019) (23)
- A comparative study of the radiation hardness of silicon carbide using light ions (2003) (23)
- Mechanism of anomalous degradation of silicon solar cells subjected to high-fluence irradiation (1996) (23)
- Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation (2019) (22)
- Vacancy production by 3 MeV electron irradiation in 6H-SiC studied by positron lifetime spectroscopy (1997) (22)
- Observation of psi(4040) and psi(4160) decay into eta J/psi (2012) (22)
- Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface (2018) (22)
- Radiation effects on the performance of flexible perovskite solar cells for space applications (2020) (21)
- First flight demonstration of film‐laminated InGaP/GaAs and CIGS thin‐film solar cells by JAXA's small satellite in LEO (2011) (21)
- Initial experiments in JT-60 (1986) (21)
- Evaluation of radiation tolerance of perovskite solar cell for use in space (2015) (21)
- Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors (2020) (21)
- Characterization of Mn-doped 3C-SiC prepared by ion implantation (2007) (21)
- Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells (2002) (20)
- Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy (2007) (20)
- Optimization of Temperature Sensitivity Using the Optically Detected Magnetic-Resonance Spectrum of a Nitrogen-Vacancy Center Ensemble (2018) (20)
- Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance (2014) (20)
- Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures (1996) (20)
- Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors (2018) (20)
- Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes (2013) (19)
- Recent results of LH experiments on the JT-60 tokamak (1990) (19)
- Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling (2018) (19)
- Fluorescent color centers in laser ablated 4H-SiC nanoparticles. (2017) (19)
- Strategies for improving radiation tolerance of Si space solar cells (2003) (19)
- Effect of Cl ion implantation on electrical properties of CuInSe2 thin films (2003) (19)
- Search for a low mass particle decaying into μ+ μ- in B0 → K*0 X and B0 → ρ0 X at Belle. (2010) (18)
- Effects of Al composition on luminescence properties of europium implanted AlxGa1−xN (0 ≤ x ≤ 1) (2003) (18)
- Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diode (2007) (18)
- Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications (2018) (18)
- Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC (2011) (18)
- Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments (2012) (18)
- Radiation Hardness Evaluation of SiC-BGSIT (2010) (18)
- Search for CP Violation in tau(+/-) -> K-S(0)pi(+/-)nu(tau) Decays at Belle (2011) (18)
- Recombination centers in as-grown and electron-irradiated ZnO substrates (2007) (18)
- Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy (2014) (18)
- The measurement of electron transport coefficients in methane by a double-shutter drift tube method combined with ATS analysis (1996) (17)
- Search for CP violation in τ ± → K 0 S π ± ν τ decays at Belle (2013) (17)
- γ-Ray irradiation effects on 6H-SiC MOSFET (1999) (17)
- Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching (2006) (17)
- Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation (1998) (17)
- Simultaneous thermometry and magnetometry using a fiber-coupled quantum diamond sensor (2021) (17)
- Radiation Response of Silicon Carbide Diodes and Transistors (2012) (17)
- Si Substrate Suitable for Radiation-Resistant Space Solar Cells (2006) (17)
- Enhancement effect of Tb‐related luminescence in AlxGa1–xN with the AlN molar fraction 0 ≤ x ≤ 1 (2005) (17)
- Super radiation tolerance of CIGS solar cells demonstrated in space by MDS-1 satellite (2003) (17)
- Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN (2002) (17)
- Millimetre-scale magnetocardiography of living rats with thoracotomy (2022) (17)
- Extending coherence time of macro-scale diamond magnetometer by dynamical decoupling with coplanar waveguide resonator. (2018) (16)
- Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC (2019) (16)
- ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons (1997) (16)
- Improvement of luminescence capability of Tb3+‐related emission by AlxGa1−xN (2003) (16)
- Study of radiation response on single-junction component sub-cells in triple-junction solar cells (2003) (16)
- The evaluation of radiation damage parameter for CVD diamond (2016) (16)
- Soft-Error Rate in a Logic LSI Estimated From SET Pulse-Width Measurements (2009) (16)
- Impacts of gate bias and its variation on gamma‐ray irradiation resistance of SiC MOSFETs (2017) (16)
- Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors (2014) (16)
- Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region (2015) (16)
- Measurement of electron transport coefficients in tetraethoxysilane by a double-shutter drift tube method (1996) (16)
- Defects in Ion-Implanted 3C–SiC Probed by a Monoenergetic Positron Beam (1996) (16)
- Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV (2009) (16)
- Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets (2018) (15)
- Effect of proton irradiation on electrical properties of CuInSe2 thin films (2003) (15)
- Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation (2017) (15)
- Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing (2018) (15)
- Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime (2017) (15)
- Broadband excitation by chirped pulses: application to single electron spins in diamond (2013) (15)
- Defect-engineering in SiC by ion implantation and electron irradiation (2006) (15)
- Change in I–V characteristics of subcells in a multi-junction solar cell due to radiation irradiation (2012) (15)
- Magnetic field-induced enhancement of the nitrogen-vacancy fluorescence quantum yield. (2017) (15)
- Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation (2008) (15)
- Search for CP violation in the decays D(s)+ --> KS0pi+ and D(s)+ --> KS0K+. (2010) (15)
- Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams (2000) (15)
- Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC (2012) (15)
- Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions (2007) (15)
- The JT-60 diagnostic system (1987) (14)
- Loop-gap Microwave Resonator for Hybrid Quantum Systems (2018) (14)
- Search for lepton-flavor-violating $τ\to\ell V^0$ decays at Belle (2008) (14)
- Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO (2013) (14)
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams (1997) (14)
- New application of NV centers in CVD diamonds as a fluorescent nuclear track detector (2015) (14)
- Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC (2018) (14)
- Enhancement of local electrical conductivities in SiC by femtosecond laser modification (2011) (14)
- Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission (2017) (14)
- Bright Nitrogen-Vacancy Centers in Diamond Inverted Nanocones (2020) (14)
- Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation (2004) (13)
- Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films (2003) (13)
- Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation (2013) (13)
- Radiation hardness assessment of high voltage 4H-SiC BJTs (2009) (13)
- Status and prospect of JT-60 plasma control and diagnostic data processing systems for advanced operation scenarios (2006) (13)
- Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions (2002) (13)
- Amplification by stimulated emission of nitrogen-vacancy centres in a diamond-loaded fibre cavity (2019) (13)
- M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies (2021) (13)
- High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits (2017) (13)
- Analysis of Radiation Response and Recovery Characteristics of Amorphous Silicon Solar Cells (2006) (13)
- In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions (2008) (13)
- (Invited) SiC MOS Interface States: Difference between Si Face and C Face (2013) (12)
- Evaluation of the electrical characteristics of III-V compounds solar cells irradiated with protons at low temperature (2005) (12)
- Effects of implantation conditions on the luminescence properties of Eu-doped GaN (2003) (12)
- Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond (2015) (12)
- Proton-induced photoconductivity increment and the thermal stability of a-Si:H thin film (2010) (12)
- Dopant effects on solid phase epitaxy in silicon and germanium (2012) (12)
- Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator (2022) (12)
- Electron beam irradiation effect on the mechanical properties of nanosilica-filled polyurethane films (2017) (12)
- Effect of Mg ion implantation on electrical properties of CuInSe2 thin films (2000) (12)
- Deactivation of nitrogen donors in silicon carbide (2006) (12)
- Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation (2016) (12)
- Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells (2005) (12)
- Ligand hyperfine interactions at silicon vacancies in 4H-SiC (2019) (11)
- Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security (2020) (11)
- Analysis of Anomalous Degradation of Cu(In,Ga)Se2 Thin-Film Solar Cells Irradiated with Protons (2007) (11)
- Narrow inhomogeneous distribution of spin-active emitters in silicon carbide (2021) (11)
- Defects at nitrogen site in electron-irradiated AlN (2011) (11)
- Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature (2014) (11)
- Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage (2019) (11)
- Investigation of the silicon vacancy color center for quantum key distribution. (2015) (11)
- 3 MeV electron irradiation-induced defects in CuInSe2 thin films (2003) (11)
- Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing (1997) (11)
- Spectral response, carrier lifetime, and photocurrents of SiC photocathodes (2015) (11)
- Impact of metal deposition process upon reliability of dual-damascene copper interconnects (2003) (11)
- EPR and ENDOR Studies of Shallow Donors in SiC (2010) (11)
- High Power Heating Results on JT-60 (1988) (11)
- Investigation of the radiation hardness on semiconductor devices using the ion micro-beam (2002) (11)
- Charge multiplication effect in thin diamond films (2016) (11)
- Diffusion of Vacancies Created by High‐Energy Heavy Ion Strike Into Diamond (2017) (11)
- Development of Space Solar Sheet with inverted triple-junction cells (2015) (11)
- Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC (2020) (11)
- Reliability of gamma-irradiated n-channel ZnO thin-film transistors: electronic and interface properties (2018) (11)
- Investigation of Vacancy-Type Defects in P+-Implanted 6H-SiC Using Monoenergetic Positron Beams (1998) (11)
- Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing (2018) (10)
- Effect of proton irradiation on AlGaN/GaN micro-Hall sensors (2013) (10)
- Abnormal increase in soft-error sensitivity of back-biased thin-BOX SOI SRAMs (2017) (10)
- Measurement of the Townsend first ionization coefficient in tetraethoxysilane (1995) (10)
- The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors (2007) (10)
- Pulsed EPR studies of shallow donor impurities in SiC (2003) (10)
- Cortical Dipole Imaging of Movement-related Potentials by Means of Parametric Inverse Filters Incorporating with Signal and Noise Covariance (2007) (10)
- Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection (2011) (10)
- Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions (1997) (10)
- Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons (2010) (10)
- Isotopic identification of engineered nitrogen-vacancy spin qubits in ultrapure diamond (2014) (10)
- Effect of Alloy Composition on Photoluminescence Properties of Europium Implanted AlGaInN (2003) (10)
- Strong blue emission from Er3+ doped in AlxGa1-xN (2004) (10)
- Experimental Verification of Scan-Architecture-Based Evaluation Technique of SET and SEU Soft-Error Rates at Each Flip-Flop in Logic VLSI Systems (2009) (10)
- Photoluminescence at the ground-state level anticrossing of the nitrogen-vacancy center in diamond: A comprehensive study (2020) (10)
- 380 keV proton irradiation effects on photoluminescence of Eu-doped GaN (2008) (10)
- Comparative study of transient current induced in SiC p+n and n+p diodes by heavy ion micro beams (2009) (9)
- Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments (2015) (9)
- ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals (1997) (9)
- Dicarbon antisite defect in n-type 4H-SiC (2009) (9)
- Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions (2016) (9)
- Light emitting FET based-on spatially selective doping of Eu in AlGaN/GaN HEMT (2009) (9)
- Deep levels in low‐energy electron‐irradiated 4H‐SiC (2009) (9)
- Creation and Functionalization of Defects in SiC by Proton Beam Writing (2016) (9)
- Time Resolved Ion Beam Induced Current measurements on MOS capacitors using a cyclotron microbeam (2009) (9)
- 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics (2016) (9)
- Oxygen-related defects in O+-implanted 6H–SiC studied by a monoenergetic positron beam (1999) (9)
- Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S Ä 32 and C 3 v symmetry in n-type 4 H-SiC (2002) (9)
- Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays (2017) (9)
- ESR characterization of activation of implanted phosphorus ions in silicon carbide (2003) (9)
- E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy (2013) (9)
- Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation (2012) (9)
- High efficiency and radiation resistant InGaP/GaAs//CIGS stacked solar cells for space applications (2016) (9)
- Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications (2021) (9)
- EPR and ab initio calculation study on the EI4 center in 4H and 6H-SiC (2010) (9)
- JT-60 experiments (1987) (9)
- Bistable defects in low‐energy electron irradiated n‐type 4H‐SiC (2010) (9)
- Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature (2016) (8)
- Optimum structures for gamma‐ray radiation resistant SiC‐MOSFETs (2016) (8)
- Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons (2013) (8)
- Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV (2009) (8)
- Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars (2021) (8)
- GAS EVOLUTION FROM INSULATING MATERIALS FOR SUPERCONDUCTING COIL OF ITER BY GAMMA RAY IRRADIATION AT LIQUID NITROGEN TEMPERATURE (2008) (8)
- Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis (2015) (8)
- Effect of coating adhesion and degradation on tin whisker mitigation of polyurethane-based conformal coatings (2019) (8)
- Anomalous enhancement in radiation induced conductivity of hydrogenated amorphous silicon semiconductors (2012) (8)
- Characterization of charge generated in silicon carbide n + p diodes using transient ion beam-induced current (2005) (8)
- Gradiometer Using Separated Diamond Quantum Magnetometers (2021) (8)
- Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation (2010) (8)
- Radiation Response of Negative Gate Biased SiC MOSFETs (2019) (8)
- Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike (2010) (8)
- Qualification Test Results of IMM Triple-Junction Solar Cells, Space Solar Sheets, and Lightweight&Compact Solar Paddle (2017) (8)
- Publisher's Note: Divacancy in 4H-SiC [Phys. Rev. Lett. 96, 055501 (2006)] (2006) (8)
- Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy (2004) (8)
- Investigation of Tb‐related green emission in group‐III nitrides by time‐resolved photoluminescence measurement (2008) (8)
- Identification of a Frenkel-pair defect in electron-irradiated 3C SiC (2009) (8)
- Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam (2015) (7)
- Structural And Magnetic Properties Of Mn-Doped SiC (2010) (7)
- Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation (Phys. Status Solidi A 11∕2015) (2015) (7)
- Fluorescent Silicon Carbide Nanoparticles (2021) (7)
- Preparation of metal doped SiO2 films by magnetron sputtering deposition using metal oxide mixture powder target (2018) (7)
- Response of 4H-SiC Detectors to Ionizing Particles (2020) (7)
- Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC (2006) (7)
- High-precision robust monitoring of charge/discharge current over a wide dynamic range for electric vehicle batteries using diamond quantum sensors (2022) (7)
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime (2010) (7)
- Electron and proton irradiation effects on substrate-type amorphous silicon solar cells (2011) (7)
- Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs (2017) (7)
- Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions (2001) (7)
- Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation (2013) (7)
- Structural analysis of (Ga,Mn)N epilayers and self‐organized dots using MeV ion channeling (2006) (7)
- Analysis of end-of-life performance for proton-irradiated triple-junction space solar cell (2003) (7)
- Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor (2011) (7)
- Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy (2016) (7)
- In-situ measurement of degradation of Cu(In,Ga)Se/sub 2/ thin film solar cells during electron and proton irradiations (2002) (7)
- Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H–SiC (2006) (7)
- Measurement of the Townsend first ionization coefficient in tetraethoxysilane and oxygen mixtures (1996) (7)
- Multimodal Imaging and Soft X‐Ray Tomography of Fluorescent Nanodiamonds in Cancer Cells (2020) (7)
- Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation (2020) (7)
- Atom–Photon Coupling from Nitrogen-vacancy Centres Embedded in Tellurite Microspheres (2015) (7)
- Analysis for Radiation-Resistance of InGaP and GaAs Sub-Cells for InGaP/GaAs/Ge 3-Junction Solar Cells (2006) (6)
- Highly sensitive macro-scale diamond magnetometer operated by dynamical decoupling sequence with coplanar waveguide resonator (2018) (6)
- Fluorescence EXAFS study on local structures around Eu atoms implanted in AlxGa1-xN (2006) (6)
- Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell (2004) (6)
- PseudoMorphic Glass to enable high efficiency space photovoltaic devices (2011) (6)
- Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC ${\hbox{p}}^{+}{\hbox{n}}$ Diode Irradiated With High-Energy Electrons (2011) (6)
- Radiation Resistance of Wide Band Gap n+/ p AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells (2007) (6)
- Observation of transient current induced in silicon carbide diodes by ion irradiation (2003) (6)
- Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID (2020) (6)
- Deep-level transient spectroscopy analysis of proton-irradiated n+/p InGaP solar cells (2001) (6)
- Piezoelectric photothermal investigation of proton irradiation induced defects in CuInSe2 epitaxial films (2005) (6)
- Room-temperature hyperpolarization of polycrystalline samples with optically polarized triplet electrons: pentacene or nitrogen-vacancy center in diamond? (2021) (6)
- Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams (2015) (6)
- Transient current induced in thin film diamonds by swift heavy ions (2017) (6)
- Electric properties of undoped hydrogenated amorphous silicon semiconductors irradiated with self-ions (2012) (6)
- Verification for EMI test of cardiac pacemaker by portable telephones with an anatomically based human model (2003) (6)
- Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals (2018) (6)
- (Invited) SiC MOS Interface States: Similarity and Dissimilarity from Silicon (2012) (6)
- Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes (2019) (6)
- Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices (2021) (6)
- Equilibrium charge state of NV centers in diamond (2021) (6)
- Proximal nitrogen reduces the fluorescence quantum yield of nitrogen-vacancy centres in diamond (2021) (6)
- Temporal electric conductivity variations of hydrogenated amorphous silicon due to high energy protons (2012) (6)
- Radiaton effects on high-efficiency InGaP/InGaAs/Ge triple-junction solar cells developed for terrestrial use (2002) (6)
- Observation of the (1680) and the Y (2175) in e + e ! + (2009) (6)
- A hollow-cathode discharge as a cold uniform plasma source (1981) (6)
- Phase transformation of Mg–Fe alloys (2010) (6)
- The role of a radial ion-track distribution in semiconductors studied by numerical simulations (2009) (6)
- Do humoral factors removed by plasmapheresis suppress the cellular immune system in cryoglobulinemia? (1991) (6)
- Identification of divacancies in 4H-SiC (2006) (6)
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge (2010) (6)
- Comparative study on degradation characteristics of component subcells in IMM triple-junction solar cells irradiated with high-energy electrons and protons (2013) (6)
- Focused Microbeam Irradiation Effects in Transmission CVD Diamond Film Detectors (2013) (6)
- Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots (2016) (6)
- Ion beam induced charge gate rupture of oxide on 6H-SiC (2001) (6)
- Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays (1997) (5)
- Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation (2008) (5)
- Preparation of Sn doped SiO2 films using SiO2 and SnO2 mixture powder target by magnetron sputtering deposition (2017) (5)
- Surface modifications of hydrogen storage alloy by heavy ion beams with keV to MeV irradiation energies (2015) (5)
- Experimental and Theoretical Analysis of Noise Strength and Environmental Correlation Time for Ensembles of Nitrogen-Vacancy Centers in Diamond (2019) (5)
- Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation (2009) (5)
- Degradation behavior of flexible a-Si/a-SiGe/a-SiGe triple junction solar cells irradiated with 20-350 keV protons (2012) (5)
- Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing (2009) (5)
- Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC (2011) (5)
- Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation (2004) (5)
- Magnetic-field-dependent stimulated emission from nitrogen-vacancy centers in diamond (2022) (5)
- Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics (2017) (5)
- Radiation study in quantum well III-V multi-junction solar cells (2013) (5)
- Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC (2003) (5)
- Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells (2006) (5)
- Acoustomicrofluidic Concentration and Signal Enhancement of Fluorescent Nanodiamond Sensors. (2021) (5)
- Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions (2007) (5)
- Near‐Infrared Fluorescence from Silicon‐ and Nickel‐Based Color Centers in High‐Pressure High‐Temperature Diamond Micro‐ and Nanoparticles (2020) (5)
- Deep levels related to the carbon antisite–vacancy pair in 4H-SiC (2021) (5)
- Study the effects of proton irradiation on GaAs/Ge solar cells (2010) (5)
- Effect of annealing under high oxygen pressure on the structure and superconductivity of (Ba0.85Nd0.15)2NdCu3O6+z (1990) (5)
- Change in the electrical performance of InGaAs quantum dot solar cells due to irradiation (2010) (5)
- Evaluation of Damage Coefficient for Minority-Carrier Diffusion Length of Triple-Cation Perovskite Solar Cells under 1 MeV Electron Irradiation for Space Applications (2021) (5)
- Fluorescent Nanodiamonds Embedded in Poly-ε-Caprolactone Fibers as Biomedical Scaffolds (2020) (5)
- 51.3: 2.1‐inch QCIF+ Dual Emission AMOLED Display having Transparent Cathode Electrode (2004) (5)
- Improvement of Hydrogen Absorption Characteristics of Pd Using Irradiation of Heavy Ions (2011) (5)
- Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC (2006) (5)
- Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs (2009) (5)
- Effects of irradiation beam conditions on radiation degradation of solar cells (2010) (5)
- Defects in low-energy electron-irradiated n-type 4H-SiC (2010) (5)
- M center in 4 H -SiC is a carbon self-interstitial (2021) (5)
- Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons (2014) (5)
- Radiation hardness of Ga2O3 MOSFETs against gamma-ray irradiation (2017) (5)
- Flight demonstration of inverted metamorphic triple-junction solar cells in space (2018) (5)
- Effect of Electron Irradiation on Properties of CuInSe2 Thin Films (2000) (5)
- Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures (2013) (5)
- Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation (2013) (5)
- First study of ηc(1S), η(1760) and X(1835) production via η′π+π− final states in two-photon collisions (2012) (5)
- Spatial, LET and Range Dependence of Enhanced Charge Collection by Single Ion Strike in 4H-SiC MESFETs (2011) (5)
- (Invited) Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study (2017) (5)
- Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance (2010) (5)
- Analysis of radiation effects in space for terrestrial solar cells on MDS-1 (2003) (5)
- Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC (2012) (5)
- High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate (2015) (5)
- Charge generated in 6H–SiC n+p diodes by MeV range heavy ions (2011) (5)
- First flight demonstration of glass-type space solar sheet (2014) (5)
- Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence (2009) (5)
- Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons (2007) (4)
- Low-energy proton-induced defects in n+/p InGaP solar cells (2003) (4)
- Evaluation of the characteristics of silicon carbide diodes using transient-IBIC technique (2003) (4)
- Study of electron irradiation-induced defects in CuInSe2 and CuInxGa1-xSe2 by electron spin resonance (2006) (4)
- Effects of Proton Irradiation on the Magnetoelectric Properties of 2DEG AlGaN/GaN Micro-Hall Sensors (2012) (4)
- Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures (2002) (4)
- Entanglement and control of single quantum memories in isotopically engineered silicon carbide (2020) (4)
- Hydrogen at zinc vacancy of ZnO : an EPR and ESEEM study (2014) (4)
- Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance (2008) (4)
- Electrical Conduction Properties of SiC Modified by Femtosecond Laser (2012) (4)
- Energy loss process analysis for radiation degradation and immediate recovery of amorphous silicon alloy solar cells (2015) (4)
- Study of the hadronic transitions Υ(2S)→(η,π$^0$)Υ(1S) at Belle (2012) (4)
- Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method (2010) (4)
- Kinetics of TiO 2 thin film fabrication by sputtering deposition using metal based powder target (2015) (4)
- Band Alignment at n-GaN/Electrolyte Interface Explored by Photo-Induced Offset of Open-Circuit Potential for Efficient Water Splitting (2017) (4)
- Characteristics of the JT-60 divertor and limiter plasmas with high power auxiliary heating (1989) (4)
- Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC (2007) (4)
- A study on the artifact external quantum efficiency of Ge bottom subcells in triple-junction solar cells (2013) (4)
- Various Single Photon Sources Observed in SiC Pin Diodes (2018) (4)
- Radiation degradation and damage coefficients of InGaP/GaAs/Ge triple-junction solar cell by low-energy electrons (2011) (4)
- New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC (2010) (4)
- Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs (2000) (4)
- Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces (2012) (4)
- Microwave-Assisted Spectroscopy of Vacancy-Related Spin Centers in Hexagonal SiC (2021) (4)
- Effectiveness evaluation of shielding material in reducing electromagnetic interference of cardiac pacemaker induced by portable information terminals (2003) (4)
- Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing (2021) (4)
- Radiation-induced defects in GaN (2010) (4)
- Status of the high brightness polarized electron source using transmission photocathode (2011) (4)
- Evidence for direct CP violation in B±→ηh± and observation of B0→ηK0. (2012) (3)
- Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment (2011) (3)
- Electronic properties of defects in high‐fluence electron‐irradiated bulk GaN (2016) (3)
- Spatial, LET and range dependence of enhanced charge collection by single ion strike in 4H-SiC MESFETs (2011) (3)
- Degradation and regeneration of radiation-induced defects in silicon: A study of vacancy-hydrogen interactions (2019) (3)
- Change in Ion Beam Induced Current from Si Metal‐Oxide‐Semiconductor Capacitors after Gamma‐Ray Irradiation (2009) (3)
- The study of dependency of external quantum efficiency of triple-junction solar cells on measurement condition (2014) (3)
- Non-contact measurement of internal body temperature using subcutaneously implanted diamond microparticles. (2021) (3)
- Effects of Electron Irradiation on CuInS2 Crystals (2005) (3)
- Detection of paramagnetic spins with an ultrathin van der Waals quantum sensor (2023) (3)
- Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs (2022) (3)
- Proton-beam-induced defect levels in CuInSe2 thin-film absorbers: An investigation on nonradiative electron transitions (2004) (3)
- Radiation Effects on Semiconductors and Polymers for Space Applications (2010) (3)
- Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions (2000) (3)
- Search for lepton flavor violating tau ---> mu gamma decay (2002) (3)
- Reversible changes in temperature dependence of electric conductivity of hydrogenated amorphous silicon caused by proton irradiation (2014) (3)
- Degradation Behavior of Flexible a-Si/a-SiGe/a-SiGe Triple-Junction Solar Cells Irradiated With Protons (2013) (3)
- Preliminary Study on Super Radiation-Resistant Mechanical-Stack Triple-Junction Space Solar Cell: PHOENIX (2019) (3)
- First Evidence for the Suppressed Decay B- -> DK-, D -> K+pi- (2011) (3)
- Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment (2020) (3)
- Estimation of subcell photocurrent in IMM3J using LED bias light (2013) (3)
- Radiation resistance of InGaP/GaAs dual-junction thin-film space solar cell (2009) (3)
- Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics (2023) (3)
- 0.5-/spl mu/m-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-/spl mu/m CMOS applications (1999) (3)
- New Applications of Ion Beams to Material, Space, and Biological Science and Engineering (2003) (3)
- Efficiently Engineered Room Temperature Single Photons in Silicon Carbide (2012) (3)
- Imaging Current Paths in Silicon Photovoltaic Devices with a Quantum Diamond Microscope (2022) (3)
- Irradiation and measurement of solar cells at low intensity, low temperature (LILT) conditions (2008) (3)
- 4H-SiC Schottky Barrier Diodes for Efficient Thermal Neutron Detection (2021) (3)
- Terrestrial Solar Cells in Space (2004) (3)
- Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs (2016) (3)
- Creation of silicon vacancy color centers with a narrow emission line in nanodiamonds by ion implantation (2021) (3)
- Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation (2006) (3)
- Locking of electron spin coherence over fifty milliseconds in natural silicon carbide (2018) (3)
- Quenching of impact ionization in heavy ion induced tracks in wide bandwidth Si Avalanche Photodiodes (2007) (3)
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges (2002) (3)
- Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers (2016) (3)
- EPR Identification of Defects and Impurities in SiC: To be Decisive (2008) (3)
- Effectiveness evaluation of shielding material for reducing electromagnetic interference of cardiac pacemaker by portable information terminals (2001) (3)
- E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor (2020) (3)
- Opportunity of single atom control for quantum processing in silicon and diamond (2014) (3)
- Evaluation of subcell power conversion efficiencies of radiation‐damaged triple‐junction solar cells using photoluminescence decays (2017) (3)
- Deep Level Defects in 4H-SiC Epitaxial Layers (2018) (3)
- Effects of Beam Conditions in Ground Irradiation Tests on Degradation of Photovoltaic Characteristics of Space Solar Cells (2021) (3)
- Anomalous Formation of Irradiation-Induced Nitrogen-Vacancy Centers in 5 nm-Sized Detonation Nanodiamonds (2021) (3)
- Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence (2014) (3)
- Remote Nanodiamond Magnetometry (2016) (3)
- Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers (2010) (3)
- Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC (2011) (3)
- Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition (2000) (3)
- Ensemble Negatively-Charged Nitrogen-Vacancy Centers in Type-Ib Diamond Created by High Fluence Electron Beam Irradiation (2021) (3)
- Radiation effects in solar cells (2013) (3)
- Charged particle radiation effects on flexible a-Si/a-SiGe/a-SiGe triple junction solar cells for space use (2013) (3)
- Observation of B^{+}→pΛ[over ¯]π^{+}π^{-} at Belle (2009) (2)
- Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride (2019) (2)
- Search forB0→pp¯,ΛΛ¯andB+→pΛ¯at Belle (2007) (2)
- Magnetic resonance studies of defects in electron-irradiated ZnO substrates (2007) (2)
- C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance (2014) (2)
- Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays (2008) (2)
- (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory (2007) (2)
- Millimetre-scale magnetocardiography of living rats using a solid-state quantum sensor (2021) (2)
- Radiation Resistant Low Bandgap InGaAsP Solar Cell for Multi-Junction Solar Cells (2001) (2)
- Long-lived quantum memory in silicon carbide with natural isotope abundance (2016) (2)
- Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays (2011) (2)
- 60Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors (2011) (2)
- Hydrogen production from water by using hybrid gas-liquid nanosecond pulsed discharge (2015) (2)
- Evaluation of soft error rates using nuclear probes in bulk and SOI SRAMs with a technology node of 90 nm (2010) (2)
- Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC (2011) (2)
- Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC (2008) (2)
- Observation of B0 → D*-(5π)+, B+ → D*-(4π)++ and B+ → D*0 (5π)+ (2004) (2)
- Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons (2010) (2)
- Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC (2010) (2)
- Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect (2004) (2)
- An SRAM SEU Cross Section Curve Physics Model (2022) (2)
- Theoretical and experimental investigation of point defects in cubic boron nitride (2017) (2)
- Radiation-resistance analysis of GaAs and InGaP sub cells for InGaP/GaAs/Ge 3-junction space solar cells (2008) (2)
- Durability of Triple-Junction Solar Cell for HIHT Environments, Venus and Mercury Exploration Missions (2008) (2)
- Radiation response of the fill-factor for GaAs solar cells with InGaAs quantum dot layers (2014) (2)
- EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC (2002) (2)
- The effect of luminescence coupling in external quantum efficiency measurement of multi-junction solar cells (2015) (2)
- Energy-Back-Transfer Process in Rare-Earth Doped AlGaN (2005) (2)
- Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC (2004) (2)
- Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions (2001) (2)
- Modified divacancies in 4H-SiC (2022) (2)
- A Methodology for Reconstructing DSET Pulses from Heavy-Ion Broad-Beam Measurements (2020) (2)
- Characterization of stability of benchmark organic photovoltaic films after proton and electron bombardments (2018) (2)
- M-center in low-energy electron irradiated 4H-SiC (2022) (2)
- Magnetic Field Generation System of the Magnetic Probe With Diamond Quantum Sensor and Ferromagnetic Materials for the Detection of Sentinel Lymph Nodes With Magnetic Nanoparticles (2020) (2)
- All-Optical Wide-Field Selective Imaging of Fluorescent Nanodiamonds in Cells, In Vivo and Ex Vivo. (2021) (2)
- First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure (2019) (2)
- Nitrogen related paramagnetic defects: Decoherence source of ensemble of NV− center (2022) (2)
- Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces (2021) (2)
- Targeting cell surface glycans with lectin-coated fluorescent nanodiamonds (2022) (2)
- Displacement Damage Dose Analysis of Alpha-ray Degradation on Output of an InGaP Solar Cell (2020) (2)
- Characterization of LiNbO3 Single-Crystal Substrates Irradiated with Electrons (2011) (2)
- Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices Due to Radiations (2009) (2)
- Defective leukocyte function‐related cryoprecipitable protein in Cryoglobulinemia (1994) (2)
- Evaluation of materials for use in extracorporeal circulation. In vitro serum-material interaction. (1991) (2)
- Mechanisms of Reduction in Hole Concentration in Al-Implanted p-Type 6H-SiC by 1 MeV Electron Irradiation (2008) (2)
- Deep level transient spectroscopy study of electron-irradiated CuInSe2 thin films (2003) (2)
- Observation of the interference fragmentation function for charged pion pairs in $e^+e^-$ annihilation near $\sqrt{s}=10.58$ GeV (2011) (2)
- Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes (2015) (2)
- Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer (2019) (2)
- Electrical performance degradation of GaAs solar cells with InGaAs quantum dot layers due to proton irradiation (2013) (2)
- Hot-Implantation of Phosphorus Ions into 6H-SiC (1997) (2)
- Static and Dynamic Stark Tuning of the Silicon Vacancy in Silicon Carbide (2020) (2)
- Analysis on degradation characteristics of component subcells in IMM triple-junction solar cells (2016) (2)
- Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs (2018) (2)
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- The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET (2019) (2)
- Defects Introduced by Electron-Irradiation at Low Temperatures in SiC (2009) (2)
- Effects of high-energy proton irradiation on the density and Hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films (2003) (2)
- Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs (2015) (2)
- Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams (2006) (2)
- Pulsed EPR Studies of the Tv2a Center in 4H-SiC (2009) (2)
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- Bias Dependence of Heavy-Ion-Induce Charge Collected from SiC MOSFET (2017) (0)
- Luminescence properties of Eu- implanted GaN for full color micro light emitting diode array. (2013) (0)
- Measurement of electron transport coefficients in tetraethoxysilane by a double-shutter drift tube method (1996) (0)
- Influence of hydrogen on single photon sources in channel region of 4H-SiC MOSFETs (2017) (0)
- Ion irradiation effects on electric properties of hydrogenated amorphous silicon thin films (2013) (0)
- Research and Development of Space Solar Cells Based on Compound Semiconductors (2017) (0)
- Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC (2008) (0)
- Radiation response of 4 H-SiC JFETs in in high dose region (2019) (0)
- Study of intermediate two-body decays in B̄ 0 → Σ c ( 2455 ) 0 p̄π + Belle Collaboration (2008) (0)
- Evidencefordirect CP violationinthedecay B ! D ð Þ K , D ! K 0 þ andmeasurementof the CKM phase 3 (2010) (0)
- Analysis of Radiation Resistance in GaN HEMT (2018) (0)
- Research on 4H-SiC Trench pMOSFETs for High-Frequency CMOS inverter (2018) (0)
- Capture cross section of electron-irradiation-induced defects in bulk GaN grown by halide vapor phase epitaxy (2014) (0)
- Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array (2019) (0)
- 3 0 O ct 2 01 2 Observation of ψ ( 4040 ) and ψ ( 4160 ) decay into ηJ / ψ (2014) (0)
- Understanding the long-term performance of space-based solar cells (2014) (0)
- DERIVING EXTERNAL QUANTUM EFFICIENCY OF SOLAR CELLS FROM PHOTLUMINESCENCE MEASUREMENT (2017) (0)
- Coherent control of single spins in a silicon carbide pn junction device at room temperature (2016) (0)
- PL spectra for single photon sources formed in SiC p + nn + diodes (2017) (0)
- Observation of color centers in SiC pin diodes (2017) (0)
- Heavy-Ion-Induced Charge Enhancement in 4 H-SiC Schottky Barrier Diodes (2013) (0)
- J ul 2 01 2 Search for B → φπ decays (2013) (0)
- Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis (2007) (0)
- Native and radiation induced defects in lattice mismatched InGaAs and InGaP (2005) (0)
- Short-range to long-range order structure change of Mg–Fe alloys (2008) (0)
- Difference of soft error rates in SOI SRAM induced by various high energy ion species (2012) (0)
- The EI4 EPR centre in 6H SiC (2010) (0)
- Latest progress in gallium-oxide electronic devices (2018) (0)
- Fabrication of SiV centers by ion implantation and the dependence of creation yield on the implantation energy (2016) (0)
- Transport properties of neutron-irradiated 4H-SiC Schottky diode (2017) (0)
- Measurement of the Townsend first ionization coefficient in tetraethoxysilane and oxygen mixtures (1996) (0)
- Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures (2000) (0)
- Self-align fabrication of nano-reservoirs with NV centers in diamond for high-resolution nano-NMR (2020) (0)
- Recent results of LH experiments on the JT-60 tokamak (1990) (0)
- Research on Pseudo-CMOS logic inverters using 4H-SiC nMOSFETs (2016) (0)
- Outside Front Cover: (Biotechnology Journal 3/2021) (2021) (0)
- Search for lepton-flavor-violating tau-->lV decays at Belle (2008) (0)
- Fabrication of nitrogen-vacancy center array using nano-hole resist mask II (2015) (0)
- Ion-Irradiation Effects of Hydrogen Absorption in Palladium Metal (2008) (0)
- Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance (2016) (0)
- Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures (2020) (0)
- Annealing Temperature Dependence of Creation Efficiency of NV Center (2016) (0)
- Initial experiments in JT-60 (1986) (0)
- Effect of a body-tie structure fabricated by partial trench isolation on the suppression of floating body effect induced soft errors in SOI SRAM investigated using nuclear probes (2011) (0)
- Photoacoustic Characterization of Semi-Insulating 6 H-SiC Single Crystal Irradiated by Electron 6 H-SiC (2011) (0)
- Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles (2012) (0)
- Influence of Gate Bias on Gamma-ray Radiation Response of SiC MOSFETs (2016) (0)
- Extending spin relaxation times of nitrogen-vacancy centres in nanodiamonds via surface modification (2017) (0)
- A ug 2 00 9 Evidence for B → Kη ′ γ Decays at Belle (2009) (0)
- Research on 4H-SiC Logic Inverters with MOSFETs (2016) (0)
- Estimation Method for Radiation Resistance of Multi-junction Solar Cells using I-V Characteristics of Subcells (2013) (0)
- Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C (2011) (0)
- Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation (2011) (0)
- NV center formation efficiency by high temperature high pressure treatment (2019) (0)
- Analysis of flight demonstration results of an InGaP/GaAs dual-junction tandem solar cell (2005) (0)
- Confocal-microscope observation on single photon sources in 4H-SiC MOSFETs (2016) (0)
- Effect of high temperature and humidity on dose dependence of charges generated in SiC MOSFETs due to gamma-ray irradiation (2016) (0)
- Recovery of Short Circuit Current of 3J Solar Cells by Current Injection at Low Temperature (2006) (0)
- Oxidation-process dependence of single photon sources in 4H-SiC MOSFETs studied by confocal microscope (2016) (0)
- Dependence of Ion Species Using Diamond Fluorescent Nuclear Track Detector (2016) (0)
- Measurement of the Townsend first ionization coefficient in tetraethoxysilane (1995) (0)
- Magnetic Field Sensing with Silicon Vacancy in 4H-SiC under Ambient Conditions (2018) (0)
- Author ' s personal copy Mechanisms of changes of hole concentration in Al-doped 6 H-SiC by electron irradiation and annealing (2010) (0)
- Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges (2019) (0)
- Recovery of electrical properties of SiC MOSFETs due to gamma-ray irradiation under high temperature condition (2017) (0)
- Charge Collection Characteristics of A Super-Thin Diamond Membrane Detector Measured With High-Energy Heavy Ions (2014) (0)
- Fundamental studies on effect of ozone injection to the internal-combustion engine - FTIR spectrum of hydrocarbon compound reformulated by ozone (2008) (0)
- Luminescence Properties of Praseodymium in Gallium Nitride Semiconductor Implanted at Elevated Temperature (2018) (0)
- Engineering Silicon Carbide for Enhanced Borders and Ports Security (2020) (0)
- TiO2/TiN/TiO2 heat mirrors by laser ablation of single TiN target (2008) (0)
- Fabrication of and Investigation on Grating coupler for the Improvement of Light Extraction Efficiency of Magnetometer with Nitrogen-Vacancy Center in Diamond (2020) (0)
- Relationship between soft error rate in SOI-SRAM and amount of generated charge by high energy ion probes (2013) (0)
- Development Processes of the Heavy Ion Induced Charge Collection in SiC-MOSFETs (2016) (0)
- Divacancy spin defects coupled to photonic crystal cavities in 4H-SiC (2019) (0)
- Defects Introduction to a nano-diamond for the NV center formation (2019) (0)
- Gamma-Ray Irradiation Effects on Ga 2 O 3 MOSFETs (2017) (0)
- Single Event Gate Rupture Detection Experiment in SiC MOS Capacitors at CYRIC (2013) (0)
- Quantum magnetic sensor using fibre-cavity diamond nitrogen-vacancy centre laser (2020) (0)
- Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC (2001) (0)
- Contents list. (2017) (0)
- Absorption and birefringence study for reduced optical losses in diamond with high NV concentration (2023) (0)
- Proceedings of the 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons (2006) (0)
- Experimental Results about Receiving ISDB-T Using an Antenna on a Portable Terminal (2004) (0)
- Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy (2017) (0)
- Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC (2008) (0)
- Effect of Resistive Sheet in Reducing Electromagnetic Interference Level Induced in a Pacemaker for Portable Information Terminals (2000) (0)
- Nanopillar structures for enhanced dipole emission (2022) (0)
- Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation (2019) (0)
- Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide (2020) (0)
- Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays (2017) (0)
- A hollow-cathode discharge as a cold uniform plasma source (1981) (0)
- Supplementary material to "Room temperature hyperpolarization of polycrystalline samples with optically polarized triplet electrons: Pentacene or Nitrogen-Vacancy center in diamond?" (2020) (0)
- Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor (2023) (0)
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What Schools Are Affiliated With Takeshi Ohshima?
Takeshi Ohshima is affiliated with the following schools: