Tatau Nishinaga
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Japanese engineer
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Automotive Engineering
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Mechanical Engineering
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Engineering
Tatau Nishinaga's Degrees
- Bachelors Mechanical Engineering Institute of Science Tokyo
- Masters Automotive Engineering Institute of Science Tokyo
Why Is Tatau Nishinaga Influential?
(Suggest an Edit or Addition)According to Wikipedia, Tatau Nishinaga is the fifth president of Toyohashi University of Technology. He received his Ph.D. in electrical engineering at Nagoya University in 1967. He became a professor at the engineering faculty of Toyohashi University of Technology in 1977, the engineering faculty of Nagoya University in 1980, the engineering faculty of University of Tokyo in 1983, and the engineering and science faculty of Meijo University in 2000. In April 2002, he became the president of Toyohashi University of Technology.
Tatau Nishinaga's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- (GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy (1997) (148)
- Epitaxial Lateral Overgrowth of GaAs on a Si Substrate (1989) (118)
- Epitaxial Lateral Overgrowth of GaAs by LPE (1988) (117)
- MAGNETIC AND TRANSPORT PROPERTIES OF III-V BASED MAGNETIC SEMICONDUCTOR (GAMN)AS : GROWTH CONDITION DEPENDENCE (1999) (104)
- III–V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices (1997) (99)
- Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs (1988) (83)
- Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on Si (001) substrates (1995) (73)
- Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs (1997) (70)
- Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructures (1999) (68)
- Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates (1989) (65)
- Transport Reaction in Closed Tube Process (1965) (50)
- Microchannel epitaxy: an overview (2002) (49)
- Surface diffusion length of cation incorporation studied by microprobe-RHEED/SEM MBE (1996) (47)
- Epitaxial lateral overgrowths of GaAs on (001) GaAs substrates by LPE: Growth behavior and mechanism (1990) (46)
- Epitaxial lateral overgrowth of InP by liquid phase epitaxy (1995) (44)
- Melt growth of striation and etch pit free GaSb under microgravity (1997) (42)
- Growth kinetics in space- and earth-grown InP and GaSb crystals (1990) (39)
- Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy (1998) (39)
- Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation Dependence (1989) (38)
- Resharpening effect of AlAs and fabrication of quantum wires on V-grooved substrates by molecular-beam epitaxy (1993) (37)
- Surface diffusion and related phenomena in MBE growth of III–V compounds (1990) (36)
- Epitaxial ferromagnetic MnAs thin films grown on Si (001): The effect of substrate annealing (1996) (34)
- Advances in the understanding of crystal growth mechanisms (1997) (33)
- LPE Lateral Overgrowth of GaP (1990) (33)
- Molecular beam epitaxial growth of GaAs, AlAs and Al0.45Ga0.55As on (111) A-(001) V-grooved substrates (1994) (32)
- Vapor growth of boron monophosphide using open and closed tube processes (1972) (29)
- Spatially resolved photoluminescence of laterally overgrown InP on InP-coated Si substrates (1997) (28)
- A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy (2000) (27)
- First real time observation of reconstruction transition associated with Ga droplet formation and annihilation during molecular beam epitaxy of GaAs (1994) (27)
- Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate (1997) (27)
- Coalescence in microchannel epitaxy of InP (2000) (27)
- Interface supersaturation in microchannel epitaxy of InP (1999) (26)
- Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate (1991) (26)
- Effect of Si doping on epitaxial lateral overgrowth of GaAs on GaAs-coated Si substrate (1992) (25)
- Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B–(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron Diffraction (1993) (25)
- Studies of LPE ripple based on morphological stability theory (1978) (24)
- Inter-surface diffusion of In on (111)A-(001) InAs nonplanar substrates in molecular beam epitaxy (1995) (23)
- In-situ observation of GaAs selective epitaxy on GaAs (111)B substrates (1995) (22)
- Atomistic aspects of molecular beam epitaxy (2004) (22)
- Arsenic pressure dependence of incorporation diffusion length on (0 0 1) and (1 1 0) surfaces and inter-surface diffusion in MBE of GaAs (1999) (21)
- Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process (1966) (21)
- Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer (1981) (21)
- Behavior of macrosteps and grooves during LPE growth as observed by photoluminescence images (1983) (21)
- Thermodynamics of Vapor Growth of ZnSe-Ge-I2 System in Closed Tube Process (1966) (21)
- The role of step kinetics in MBE of compound semiconductors (1991) (21)
- Surface diffusion and atom incorporation kinetics in MBE of InGaAs and AlGaAs (1991) (20)
- RHEED oscillation and surface diffusion length on GaAs(111)B surface (1990) (20)
- Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence (1989) (18)
- The Origin of Dark Region in LPE GaP Associating with Macrostep Riser (1985) (18)
- Atomic‐scale morphology and interfaces of epitaxially embedded metal (CoAl)/semiconductor (GaAs/AlAs) heterostructures (1992) (18)
- Growth induced compositional non-uniformity in (Ga,Al)As and thermodynamical analysis (1989) (17)
- Measurement of Specific Heat of Boron Monophosphide by AC Calorimetry (1978) (16)
- Two-Dimensional Computer Analysis of Liquid Phase Epitaxy (1979) (16)
- Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication (2001) (16)
- Thermal Expansion Coefficient of Boron Monophosphide (1976) (15)
- Room‐temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs (1996) (15)
- MBE Growth of GaAs1-xSbx and InyGa1-yAs and Application of BCF Theory to Study the Alloy Composition (1988) (15)
- Sheet Resistivity of the Epitaxially Grown Germanium Layer (1968) (15)
- Surface diffusion and adatom stoichiometry in GaAs MBE studied by microprobe-RHEED/SEM MBE (1994) (15)
- Faceting of LPE GaAs grown on a misoriented Si(100) substrate (1991) (14)
- The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask (1971) (14)
- Dependence of the degree of selectivity on the Al content during the selective area growth of AlGaAs on GaAs(0 0 1) by PSE/MBE (1998) (14)
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's (1983) (14)
- Vapor‐Phase Etching of InP Using Anhydrous HCl and PH 3 Gas (1986) (14)
- Selective area MBE of GaAs, AlAs and their alloys by periodic supply epitaxy (2000) (14)
- The sources of atomic steps in epitaxial lateral overgrowth of Si (1990) (14)
- Towards understanding the growth mechanism of III-V semiconductors on an atomic scale (1993) (14)
- Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate (1975) (14)
- Surface Morphology of LPE Grown InP (1977) (13)
- Step sources in microchannel epitaxy of InP (1998) (13)
- Vapour transport equations for III–V compound semiconductors (1972) (13)
- Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy (2003) (13)
- Thermodynamical calculations on the chemical transport of GaS in a closed tube system (1973) (13)
- Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams (2000) (13)
- Distribution of Te in GaSb grown by Bridgman technique under microgravity (2000) (13)
- Quantum transport theory of semiconductors under high electric field (1977) (13)
- In situ observation of macrostep formation on misoriented GaAs(111) B by molecular beam epitaxy (1996) (13)
- Surface diffusion of Al and Ga atoms on GaAs (001) and (111) B vicinal surfaces in molecular beam epitaxy (1991) (13)
- Periodic supply epitaxy: a new approach for the selective area growth of GaAs by molecular beam epitaxy (1995) (12)
- Crystal Growth Aspect of High-Tc Superconductors (1996) (12)
- Si LPE Lateral Overgrowth from a Ridge Seed (1990) (12)
- Experimental studies on meltback morphology of InP (1977) (12)
- Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy (1990) (11)
- Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds (2001) (11)
- Shape of atomic steps and interface supersaturation between LPE macrosteps (1986) (11)
- Thermal Etching Effect of InP Substrate in LPE Saturation Process (1975) (11)
- Interface supersaturation dependence of step velocity in liquid-phase epitaxy of InP (1999) (11)
- Initial growth behaviors of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates (1997) (10)
- Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source (2000) (10)
- Real-time observations of faceting and shrinkage processes of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates (1996) (10)
- AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs (2000) (10)
- Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride (1968) (10)
- Epitaxial lateral overgrowth of Si on non-planar substrate (1991) (10)
- Arsenic pressure dependence of pure two-face inter-surface diffusion between (0 0 1) and (1 1 1)B in molecular beam epitaxy of GaAs (1997) (9)
- Liquid-phase epitaxy (LPE) microchannel epitaxy of InP with high reproducibility achieved by predeposition of In thin layer (1999) (9)
- Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy (2000) (9)
- Growth of GaAs on Si by employing AlAs/GaAs double amorphous buffer (1993) (9)
- Macrostep formation and growth condition dependence in MBE of GaAs on GaAs (1 1 1)B vicinal surface (1999) (8)
- Real time observation and formation mechanism of Ga droplet during molecular beam epitaxy under excess Ga flux (1994) (8)
- Understanding of crystal growth mechanisms through experimental studies of semiconductor epitaxy (2005) (8)
- Two-dimensional numerical calculation of solute diffusion in microchannel epitaxy of InP (2000) (8)
- Arsenic pressure dependence of inter-surface diffusion in MBE of GaAs studied by the microprobe-RHEED/SEM MBE system (1997) (8)
- (1 1 1)B growth elimination in GaAs MBE of (0 0 1)-(1 1 1)B mesa structure by suppressing 2D-nucleation (2000) (8)
- Computer Calculations of the Chemical Transport of GaSe in Closed Tubes (1975) (8)
- Real time observation of reconstruction transitions on GaAs (111)B surface by scanning electron microscopy (1996) (8)
- Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride (1977) (7)
- Te distribution in space grown GaSb (2002) (7)
- Si Contamination in Epitaxial Boron Monophosphide (1978) (7)
- Real-time observations of mesa shrinkage process in MBE of GaAs on (1 1 1)B patterned substrates and theoretical analysis (1999) (7)
- Current distributions at the lateral spreading of electron-hole plasma in a thyristor (1982) (7)
- Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrate (2010) (7)
- Non-linear and hopping transport of wide-band-gap semiconductors (1980) (7)
- Interface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPE (2001) (7)
- Selective area growth of AlGaAs on GaAs by PSE/MBE (1997) (6)
- Epitaxial CoAl/AlAs/GaAs metal semiconductor heterostructures: Growth, structure, and electrical properties (1994) (6)
- Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy (2003) (6)
- Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication (2000) (6)
- Fabrication of submicrometer structures by PSE/MBE (2000) (6)
- Theoretical study of macrostep stability under temperature gradient (1995) (6)
- Concentration profiles of surface atoms during epitaxial growth on vicinal surfaces (1993) (6)
- Suppression of Thermal Damage of InP by Adding Ar in H2 Atmosphere (1979) (6)
- Elementary growth process of molecular beam epitaxy (1995) (6)
- Sharp-Flat Reversible Change of Top of Pyramid in GaAs Molecular Beam Epitaxy on (111)B Patterned Substrate (2002) (6)
- Recent understandings of elementary growth processes in MBE of GaAs (1999) (6)
- Solid phase epitaxial growth of GaAs on Si substrates (1990) (5)
- Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs (1991) (5)
- 2D-nucleation on (1 1 1)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication (2000) (5)
- Doping Effect of Oxygen on Horizontal Bridgman Grown InP (1981) (5)
- Perfection and homogeneity of space-grown GaSb:Te crystals (2002) (5)
- Analysis of Disorder Scattering in Ga0.47In0.53As Using Gaussian Potential (1983) (5)
- Liquid-phase epitaxial lateral overgrowth of GaAs on 0.3°-misoriented epitaxial Si substrates (1995) (5)
- Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si (1991) (5)
- A detailed comparison of the degree of selectivity, morphology and growth mechanisms between PSE/MBE and conventional MBE (1999) (4)
- Two-dimensional nucleation at stacking fault during InP microchannel epitaxy (1999) (4)
- Theoretical studies of step edge supersaturation and its As/Ga flux dependence in molecular beam epitaxy of GaAs on vicinal surfaces (1995) (4)
- Start of 2D nucleation by accumulation of Ga adatoms on GaAs (1 1 1)B facet (2002) (4)
- Selective Area Growth by Periodic Supply Molecular Beam Epitaxy (1998) (4)
- Magnetotransport properties of new III-V-based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices (1998) (4)
- Theoretical Studies of Disorder Scattering in Compound Semiconductor Alloys (1976) (4)
- A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy (2002) (4)
- Crystallization process of amorphous GaAs buffer layers for the heteroepitaxial growth of GaAs on Si(0 0 1) substrates (1997) (4)
- Rate Determining Processes of Gaseous Transport in a Ga-As-Cl Closed Tube System (1975) (4)
- Mechanism of macrostep formation in solution growth of compound semiconductor and the evidence given by space experiment (2013) (4)
- Molecular beam epitaxy of gallium arsenide on 0.3°-misoriented epitaxial Si substrates (1995) (4)
- The perfection of space-grown GaSb studied by X-ray topography and high-resolution diffractometry (2002) (3)
- Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates. (1998) (3)
- Epitaxial growth and properties of MnAs/GaAs/MnAs trilayer heterostructures (1999) (3)
- Thermodynamics -for understanding crystal growth- (2016) (3)
- Experimental Studies of Impurity Doping in Vapor Growth of Ge (1963) (3)
- PL Property of ZnTe Grown by Chemical Transport and Its Growth Method Dependency (1986) (3)
- Growth of CoAl/AlAs/GaAs metal/ semiconductor heterostructures by molecular beam epitaxy (1992) (3)
- Nucleation and Surface Diffusion in Molecular Beam Epitaxy (2015) (3)
- The evidence for a preferential growth of a MnAs thin film on an as-preadsorbed Si(001) surface (1998) (2)
- Oxygen incorporation into MBE-grown AlGaAs layers (2002) (2)
- Progress in art and science of crystal growth and its impacts on modern society (2015) (2)
- Modulation molecular beam epitaxy under constant low As pressure (1994) (2)
- Heteroepitaxy of III-V Compound Semiconductors (1976) (2)
- Real time observation of In deposition on GaAs during molecular beam epitaxy by scanning electron microscopy (1995) (2)
- Plasma Spreading and Turn-On Delay in a Power Thyristor (1978) (2)
- Epitaxial semimetal (ErAs)/semiconductor (III-V) heterostructures: Negative differential resistance in novel resonant tunneling structures with an ErAs quantum well (1996) (2)
- Oxidation of the Bismuth Thin Films (1978) (2)
- Epitaxial Growth of III-V Compounds (2003) (1)
- A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis (1969) (1)
- Scanning electron microscopy of InAs aggregation on GaAs vicinal surfaces in molecular beam epitaxy (1997) (1)
- Growth of GaSb single crystal in space (2001) (1)
- Growth mechanism of beam-induced lateral epitaxy on (001) GaAs substrate in molecular beam epitaxy (2005) (1)
- Electrical properties of bulk InP synthesized by modified horizontal Bridgman method (1986) (1)
- Elementary growth process in semiconductor epitaxy —Molecular beam epitaxy as an example of epitaxy— (2001) (1)
- Vertical Bridgman growth of AlxGa1−xSb single crystals (2000) (1)
- Vapor-Phase Etching of InP Using Anhydrous HCl and PH3 Gas. (1987) (1)
- Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys (1983) (1)
- New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation (2005) (1)
- Initial stage of InAs MBE growth on GaAs substrate (1994) (1)
- A numerical model of selective meltback morphology on InP (1983) (1)
- Microchannel Epitaxy-Physics of Lateral and Vertical Growth and its Applications (2004) (1)
- Electrical Properties of Bulk InP Synthesized by Modified Horizontal Bridgman Method. (1987) (0)
- Removal of Acidic Protons (2010) (0)
- Preface to Volume I (2015) (0)
- Epitaxial Lateral Overgrowth of GaAs by LPE : Condensed Matter (1988) (0)
- A method of forming a single-crystal film (2000) (0)
- Experimental Studies of Impurity Doping in Vapor Growth of Ge (1964) (0)
- Properties of III-V based (Ga/sub 1-x/Mn/sub x/)As/AlAs magnetic semiconductor superlattices (1998) (0)
- HOT HOLES AND NOISE IN SPACE CHARGE LIMITED CURRENT FLOW IN P-TYPE SILICON (1981) (0)
- Solute Redistribution in Laser Crystallization in Concentrated InAs–GaAs Alloy (1982) (0)
- Growth of Si spherical crystals and the surface oxidation (M-9) (1993) (0)
- Electron-Phonon Interaction and the Generalized Kinetic Equation for Systems Interacting With High-Intensity Electromagnetic Wave Fields (2017) (0)
- A new method of SOS epitaxial growth with amorphous Si buffer layer (1983) (0)
- Comparative Ground Experiment of GaSb:Te Melt Growth to the Space Experiment by Chinese Recoverable Satellite (2001) (0)
- Thermodynamics and kinetics (2015) (0)
- Extrusion of Oxygen (2010) (0)
- The Preparation and Properties of Indium Phosphide (2016) (0)
- [INVITED]Epitaxial growth mechanisms-what we know and what we should know- (2013) (0)
- Selective Area Growth of GaAs by Periodic Supply Epitaxy (1995) (0)
- The Japanese FMPT and related ground experiments—material experiments aspects (1988) (0)
- Atomical processes in the epitaxial growth of semiconductors. (1989) (0)
- Vertical transport in epitaxial semimetal (ErAs)/semiconductor (III–V) quantum heterostructures (1999) (0)
- Extrusion of Sulfur Dioxide (2010) (0)
- Compositional inhomogeneity between the inside and outside of macrostep in THM-grown (Ga,Al)Sb crystal and its origin (1991) (0)
- Elemental Process in the Growth of Semiconductor Alloy (1988) (0)
- A method of manufacturing a single-crystal body (2000) (0)
- Theoritical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs : Condensed Matter (1988) (0)
- Photolysis of Barrelene (2010) (0)
- AlSb Compositional Nonuniformity Induced by Different Ga–Al Exchange Modes in the Melt Growth of AlxGa1-xSb (2001) (0)
- Crystal Growth and Nobel Prize in Physics (2015) (0)
- A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor (1974) (0)
- The distribution of the imperfection centres in an epitaxially-grown germanium layer (1968) (0)
- Epitaxy in Lattice-Mismatched Systems. Hetero-epitaxy with Large Lattice Mismatch and Microchannel Epitaxy of Compound Semiconductor. (2000) (0)
- Fundamentals of epitaxial technologies (1996) (0)
- Elemental Growth Process in Nano-structure Fabrication Studied by Microprobe-RHEED/SEM MBE(Abstract from International Seminar on Manufacturing of Advanced Materials) (1996) (0)
- Inter-surface diffusion of cation incorporation in MBE of GaAs and InAs (1999) (0)
- B-010 Development of Sustainable Society Coordinators to Encourage Environmental Education for Sustainable Societies : Educational Program to mediate between Sustainable Society and Engineering (2007) (0)
- Adatom Concentration Profiles on Simulated Vicinal Surfaces During Epitaxial Growth (1992) (0)
- Simulation of GaSb:Te Crystal Growth in Space Experiment (2017) (0)
- Materials experiment under microgravity - from Fuwatto'92 - (1993) (0)
- MBE Growth of GaAs_ Sb_x and In_yGa_ As and Application of BCF Theory to Study the Alloy Composition : Condensed Matter (1988) (0)
- Erratum to “Chairpersons’ Preface” (2003) (0)
- The perfection of space grown GaSb studies by x-ray topography and diffractometry (1999) (0)
- Computer simulation of rapid crystal growth under microgravity (1993) (0)
- Ab initio calculations on the dissociative reaction of As4 molecules (2000) (0)
- Towards high quality heteroepitaxy on mismatched substrate (1994) (0)
- Selective Area Growth of GaAs on GaAS (100) by PSE/MBE (1997) (0)
- Computer Simulation of Si Crystal Growth in Space (1991) (0)
- Surface diffusion and incorporation of group III atoms during III–V MBE (1996) (0)
- Computer Simulation of Spherical Crystal Growth in Space (1983) (0)
- The utilization of JEM for scientific and technological investigation (1991) (0)
- Kinetic dopant inhomogeneities in semiconductor crystals: formation and suppression (1993) (0)
- Experimental and Theoretical Studies on LPE Morphology of Semiconductors( Morphology of Crystals) (1979) (0)
- Properties of III-V Based Ferromagnetic Semiconductor (Ga1-xMnx)As: As Pressure Dependence (1999) (0)
- The Reconstruction of GaSb:Te Crystal Growth in Space Experiment (2015) (0)
- From Atomic Layer Controlled Epitaxy to Atomic Position Controlled Epitaxy (1991) (0)
- Status of international co-operation. Case study: Elucidation of the cause and control of second impurity pattern in semiconductors (1992) (0)
- Electrical Properties of Bi2O3 Thin Films (1980) (0)
- Crystal Growth of Semiconductors. (1994) (0)
- Report on the Meetings of the IOCG Executive Committee, Council and General Assembly held during ICCG-13/ICVGE-11 in Kyoto, Japan, 30 July?4 August 2001 (2002) (0)
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