Theodore Moustakas
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Engineering
Theodore Moustakas's Degrees
- PhD Electrical Engineering University of California, Santa Barbara
- Masters Electrical Engineering University of California, Santa Barbara
- Bachelors Electrical Engineering University of California, Santa Barbara
Why Is Theodore Moustakas Influential?
(Suggest an Edit or Addition)According to Wikipedia, Theodore D. Moustakas holds the title of Distinguished Professor of Photonics and Optoelectronics at the Boston University Department of Electrical & Computer Engineering. He was named a Fellow of the Institute of Electrical and Electronics Engineers in 2014 for his contributions to the epitaxial growth of nitride semiconductors. He has been granted 62 patents.
Theodore Moustakas's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Scattering of electrons at threading dislocations in GaN (1998) (563)
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition (1997) (438)
- The role of dislocation scattering in n-type GaN films (1998) (369)
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon (1991) (321)
- Metal contacts to gallium nitride (1993) (308)
- Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon (1992) (306)
- Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy (1998) (212)
- Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates (1993) (201)
- Growth of GaN by ECR-assisted MBE (1993) (196)
- Effect of nitrogen on the growth of diamond films (1994) (195)
- Thermal expansion of gallium nitride (1994) (193)
- Mechanism of yellow luminescence in GaN (1995) (190)
- Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer (1994) (156)
- High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy (2000) (154)
- Optoelectronic control of surface charge and translocation dynamics in solid-state nanopores (2013) (150)
- DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON (1981) (149)
- Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz (2017) (141)
- Electron transport mechanism in gallium nitride (1993) (141)
- Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency (2009) (131)
- Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy (1995) (130)
- Defect-induced stabilization of diamond films (1989) (116)
- Characterization of filament‐assisted chemical vapor deposition diamond films using Raman spectroscopy (1989) (115)
- Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy (1996) (115)
- Hydrogenation of p‐type gallium nitride (1994) (115)
- Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species (1994) (112)
- Gallium nitride (GaN) (1998) (110)
- Long range order in AlxGa1−xN films grown by molecular beam epitaxy (1997) (108)
- AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (2011) (108)
- Preparation of highly photoconductive amorphous silicon by rf sputtering (1977) (99)
- Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures (2008) (99)
- Intensity dependence of photoluminescence in GaN thin films (1994) (98)
- GROWTH AND DOPING OF GaN FILMS BY ECR-ASSISTED MBE (1992) (96)
- Surface and bulk electronic structure of thin-film wurtzite GaN (1997) (94)
- Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy (2002) (94)
- Broadening of near-band-gap photoluminescence in n-GaN films (1998) (91)
- Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors (2009) (91)
- Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy. (2006) (91)
- Distributed Bragg reflectors based on AlN/GaN multilayers (1999) (81)
- Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy (1993) (79)
- Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition (2007) (74)
- Cathodoluminescence imaging of defects and impurities in diamond films grown by chemical vapor deposition (1991) (73)
- The role of dislocations as nonradiative recombination centers in InGaN quantum wells (2008) (69)
- Sputtered hydrogenated amorphous silicon (1979) (68)
- Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys (1998) (66)
- Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides. (2007) (65)
- Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells (2012) (63)
- Strongly localized excitons in gallium nitride (1996) (62)
- Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy (1999) (62)
- A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE (1992) (61)
- Chemical ordering in AlGaN alloys grown by molecular beam epitaxy (2001) (56)
- Thickness dependent thermal conductivity of gallium nitride (2017) (56)
- Electrical characterization of GaN/SiC n-p heterojunction diodes (1998) (55)
- Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy (1996) (55)
- Growth and properties of near‐UV light emitting diodes based on InN/GaN quantum wells (2008) (55)
- Studies of thin-film growth of sputtered hydrogenated amorphous silicon (1982) (54)
- Electron drift mobility in hydrogenated a‐Si (1980) (53)
- Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations (2012) (51)
- Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy (1994) (50)
- Growth and device applications of III-nitrides by MBE (2001) (49)
- Transport and recombination properties of amorphous arsenic telluride (1975) (48)
- Experimental determination of the N-p-partial density of states in the conduction band of GaN: Determination of the polytype fractions in mixed phase samples (1998) (48)
- Thermal transport through GaN–SiC interfaces from 300 to 600 K (2015) (47)
- Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy (2004) (47)
- III-V nitrides (1997) (47)
- Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire (2007) (45)
- Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells (2009) (43)
- Transport and recombination in sputtered hydrogenated amorphous germanium (1977) (43)
- Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxy (1999) (43)
- The role of extended defects on the performance of optoelectronic devices in nitride semiconductors (2013) (42)
- MBE growth and doping of III–V nitrides (1998) (42)
- Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells (2007) (42)
- Spherical nanoindentation and deformation mechanisms in freestanding GaN films (2007) (41)
- Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells. (2007) (41)
- Plasmon-enhanced light emission based on lattice resonances of silver nanocylinder arrays. (2012) (41)
- Effect of hydrogen on the density of gap states in reactively sputtered amorphous silicon (1981) (40)
- Development of AlGaN-based graded-index-separate-confinement- heterostructure deep UV emitters by molecular beam epitaxy (2013) (39)
- High reflectivity and crack-free AlGaN 'AlN ultraviolet distributed Bragg reflectors (2002) (38)
- Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures (2016) (37)
- Photoconductive detectors based on partially ordered AlxGa1−xN alloys grown by molecular beam epitaxy (1999) (36)
- Micro-Raman imaging of GaN hexagonal island structures (1999) (36)
- The role of liquid phase epitaxy during growth of AlGaN by MBE (2012) (35)
- Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption (2005) (35)
- Properties and photovoltaic applications of microcrystalline silicon films prepared by rf reactive sputtering (1985) (34)
- Complex and incommensurate ordering in Al0.72Ga0.28N thin films grown by plasma-assisted molecular beam epitaxy (2006) (33)
- Blue–green–red LEDs based on InGaN quantum dots grown by plasma‐assisted molecular beam epitaxy (2007) (33)
- Electrical conductivity studies of diamond films prepared by electron cyclotron resonance microwave plasma (1993) (33)
- Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes (2000) (32)
- Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy (2016) (31)
- Amorphous silicon p‐i‐n solar cells fabricated by reactive sputtering (1982) (30)
- Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles (2009) (29)
- Study of defects in wide band gap semiconductors by electron paramagnetic resonance (1993) (28)
- Sub-250 nm light emission and optical gain in AlGaN materials (2013) (27)
- N K-edge x-ray-absorption study of heteroepitaxial GaN films (1997) (27)
- Growth of III‐nitride quantum dots and their applications to blue‐green LEDs (2008) (27)
- Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells (2013) (27)
- Electron-hole recombination in reactively sputtered amorphous silicon solar cells (1981) (26)
- Photoluminescence and pressure effects in short period InN/nGaN superlattices (2013) (26)
- Growth and properties of InxGa1−xN/AlyGa1−yN multiquantum wells developed by molecular beam epitaxy (1996) (26)
- Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE (1995) (26)
- Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1 1 0 0) and (0 0 0 1) GaN (2003) (26)
- High-temperature GaN/SiC heterojunction bipolar transistor with high gain (1994) (25)
- Ultraviolet electroabsorption modulator based on AlGaN∕GaN multiple quantum wells (2005) (24)
- Application of near‐edge x‐ray absorption fine structure for the identification of hexagonal and cubic polytypes in epitaxial GaN (1996) (24)
- Sequential tunneling transport characteristics of GaN/AlGaN coupled- quantum-well structures (2010) (23)
- Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency (2012) (23)
- The role of the tungsten filament in the growth of polycrystalline diamond films by filament-assisted CVD of hydrocarbons (1989) (23)
- Effect of phosphorus and boron impurities on amorphous silicon solar cells (1982) (23)
- Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons (2008) (22)
- Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire (2008) (22)
- Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates (2017) (22)
- X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes (1998) (22)
- Optical properties of reactively sputtered a-SiHx films (1980) (22)
- Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations (2012) (21)
- Enhancement of Yellow Light Extraction Efficiency of Y 3Al 5O 12:Ce 3+ Ceramic Converters Using a 2-D TiO 2 Hexagonal-Lattice Nanocylinder Photonic Crystal Layer (2016) (21)
- Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies (2004) (21)
- Molecular-Scale Mlcroporous Superlattices (1987) (20)
- High power ultraviolet light emitting diodes based on GaN∕AlGaN quantum wells produced by molecular beam epitaxy (2006) (20)
- Composition dependent bilayer atomic ordering in AlxGa1−xN films examined by polarization-dependent extended x-ray absorption fine structure (2012) (20)
- (Invited) Experimental Evidence that the Plasma-Assisted MBE Growth of Nitride Alloys is a Liquid Phase Epitaxy Process (2011) (20)
- Enhanced internal quantum efficiency and light extraction efficiency from textured GaN∕AlGaN quantum wells grown by molecular beam epitaxy (2006) (20)
- Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy (2007) (20)
- Recent progress of efficient deep UV‐LEDs by plasma‐assisted molecular beam epitaxy (2012) (20)
- Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides (2008) (19)
- Surface Electronic Structure of p-type GaN(0001) (2000) (19)
- UV emitters based on an AlGaN p–n junction in the form of graded-index separate confinement heterostructure (2013) (19)
- Growth and silicon doping of AlGaN films in the entire alloy composition by molecular beam epitaxy (2005) (19)
- Photogeneration, optical absorption and transport in hydrogenated sputtered amorphous silicon (1980) (18)
- Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy (1995) (18)
- Microstructure of relaxed InN quantum dots grown on GaN buffer layers by molecular-beam epitaxy (2006) (18)
- Deep-UV optical gain in AlGaN-based graded-index separate confinement heterostructure (2015) (18)
- Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys (2015) (18)
- OPTICAL PROPERTIES OF GAN GROWN OVER SIO2 ON SIC SUBSTRATES BY MOLECULAR BEAM EPITAXY (1998) (17)
- Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy (2001) (17)
- Band-gap evolution, hybridization, and thermal stability of In x Ga 1¿x N alloys measured by soft X-ray emission and absorption (2002) (17)
- Unoccupied Band Structure of Wurtzite GaN(0001) (1999) (17)
- Growth and Doping of AlGaN Alloys by ECR-assisted MBE (1996) (16)
- Doping Studies of n- and p-Type AlxGa1-xN Grown by ECR-Assisted MBE (1996) (16)
- Electronic structure of InN studied using soft x-ray emission, soft x-ray absorption, and quasiparticle band structure calculations (2007) (16)
- Complex ordering in ternary wurtzite nitride alloys (2003) (15)
- GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature (2007) (15)
- Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep‐UV laser structures in the form of graded‐index separate confinement heterostructure (GRINSCH) (2016) (15)
- The optical properties and electronic transitions of cubi and hexagonal GaN films between 1.5 and 10 eV (1995) (14)
- Origin of the high photoconductive gain in AlGaN films (2007) (14)
- Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy (2006) (14)
- Real-time synchrotron x-ray studies of low- and high-temperature nitridation of c-plane sapphire (2006) (14)
- Polarization Properties of Deep-Ultraviolet Optical Gain in Al-Rich AlGaN Structures (2012) (14)
- Doping, Schottky barrier and p-n junction formation in amorphous germanium and silicon by rf sputtering (1993) (14)
- Measurement of electric field across individual wurtzite GaN quantum dots using electron holography (2011) (13)
- Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells (2011) (13)
- Two-dimensional electron gas in monolayer InN quantum wells (2014) (13)
- Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N (1998) (13)
- Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides. (1999) (13)
- How Indium Nitride Senses Water. (2017) (13)
- Molecular Beam Epitaxy: Thin Film Growth and Surface Studies (1988) (12)
- Plasmonic off-axis unidirectional beaming of quantum-well luminescence (2013) (12)
- Modeling of a GaN Based Static Induction Transistor (1998) (12)
- Photoemission study of sulfur and oxygen adsorption on GaN(0001) (2005) (12)
- Study of group-III binary and ternary nitrides using X-ray absorption fine structure measurements (2001) (12)
- Photovoltaic properties of reactively sputtered a-SiHx films (1980) (12)
- Photovoltaic properties of amorphous silicon produced by reactive sputtering (1986) (12)
- Interfacial and defect structures in multilayered GaN/AlN films (2002) (12)
- Optically controlled amorphous silicon photosensitive device (1984) (11)
- Photoluminescence microscopy of InGaN quantum wells (1997) (11)
- Well width dependence of disorder effects on the optical properties of AlGaN∕GaN quantum wells (2004) (11)
- Gallium K-edge EXAFS measurements on cubic and hexagonal GaN. (1999) (11)
- III-V nitride materials and processes (1996) (11)
- Effects of power and hydrogen in the discharge on the photovoltaic properties of sputtered amorphous silicon (1983) (11)
- Comparison of Fe and Si doping of GaN: An EXAFS and Raman study (2011) (10)
- Growth and doping of GaN directly on 6H-SiC by MBE (1995) (10)
- Compositional and strain analysis of In(Ga)N/GaN short period superlattices (2018) (10)
- Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates (2010) (10)
- Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells (1983) (9)
- Electronic characterization of diamond films prepared by electron cyclotron resonance microwave plasma (1994) (9)
- Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures (1981) (9)
- A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates (1992) (9)
- Structural fluctuations and randomness in GaAsAlxGa1−xAs superlattices (1988) (9)
- Wide Band Gap Semiconductors Symposium Held in Boston, Massachusetts on 2-6 December 1991. Materials Research Society Symposium Proceedings. Volume 242 (1992) (9)
- Molecular Beam Epitaxy (2002) (9)
- Quasi-Equilibrium Nucleation and Growth of Diamond and Cubic Boron-Nitride (1992) (8)
- Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy (2010) (8)
- Nitrogen in diamond thin films (1996) (8)
- Photoconductivity Recombination Kinetics in GaN films (2000) (8)
- Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy (2000) (8)
- Investigation of vacancies in GaN by positron annihilation (1996) (8)
- EPR Investigation of Defects in Boron Nitride thin Films (1992) (8)
- Growth of non-polar (1120) and semi-polar (1126) AlN and GaN films on the R-plane sapphire (2007) (8)
- Observation of an inverted band structure near the surface of InN (2008) (7)
- Nonlinear carrier recombination and transport features in highly excited InN layer (2009) (7)
- Microporous GaAs/GaAlAs superlattices (1988) (7)
- Effects of optical stress on the properties of sputtered amorphous silicon solar cells and thin films (1983) (7)
- Growth of diamond thin films by ECR plasma-assisted CVD at low pressures and temperatures (1993) (7)
- Analysis of InGaN nanodots grown by droplet heteroepitaxy using grazing incidence small-angle X-ray scattering and electron microscopy (2017) (7)
- Chemical structure of vanadium-based contact formation on n-AlN (2010) (7)
- InGaN‐based LEDs grown by plasma‐assisted MBE on (0001) sapphire with GaN QDs in the nucleation layer (2008) (7)
- Amorphous GexH1−x bolometers (1976) (7)
- Theory and Experiment: Defect Stabilization of Diamond Films Through Multiple-Regrowth (1989) (7)
- Metal Contacts to n- Al X Ga 1-x N (1997) (7)
- Chapter 1 Introduction: A Historical Survey of Research on Gallium Nitride (1997) (7)
- Plasma nanosheath formation with carrier accumulation and enhanced localized spontaneous emission at “quantum wedges” in textured GaN (2007) (6)
- Excitonic transitions in GaAsAlGaAs superlattices studied with lateral photoconductivity (1991) (6)
- Real-time x-ray studies of gallium adsorption and desorption (2006) (6)
- Generation Recombination Noise in GaN Photoconducting Detectors (1998) (6)
- Anomalous thermoelectric power of some liquid chalcogenide systems (1975) (6)
- Sequential tunneling transport in GaN/AlGaN quantum cascade structures (2012) (6)
- Chapter 4 Sputtering (1984) (6)
- Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire (2002) (6)
- Enhanced light extraction through nano-textured GaN interfaces via supercritical angle scattering (2005) (6)
- Visible Light-Emitting Diodes Grown by Plasma Assisted Molecular Beam Epitaxy on Hydride Vapor-Phase Epitaxy GaN Templates and the Development of Dichromatic (Phosphorless) White LEDs (2005) (6)
- Potassium and ion beam induced electron accumulation in InN (2015) (5)
- Photoconducting Properties of Ultraviolet Detectors Based on GaN and Al1-xGaxN Films Grown by ECR-MBE (1996) (5)
- Growth and Crystallization Mechanism of Microcrystalline Silicon Films Produced by Reactive RF Sputtering (1985) (5)
- Epitaxial growth and structure of III-V nitride thin films (2002) (5)
- Structural Studies of Microcrystalline Silicon Films Produced by Sputtering (1984) (5)
- Subpicosecond Luminescence Studies of Carrier Dynamics in Nitride Semiconductors Grown Homoepitaxially By MBE On GaN Templates (2002) (5)
- Structure of tungsten carbide‐cobalt multilayers (1989) (5)
- Microstructure of vanadium-based contacts on n-type GaN (2012) (5)
- Influence of the wavelength of incident light on shunt conductance and fill factor in amorphous silicon solar cells (1984) (5)
- Electron Mobility of N-Type GaN Films (1997) (5)
- Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN (2005) (5)
- Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique (1998) (5)
- Materials Research Society Symposium Proceedings. Volume 449. III-V Nitrides. December 2-6, 1996, Boston, Massachusetts. (1996) (4)
- A comparative study of UV electro-absorption modulators based on bulk III-nitride films and multiple quantum wells (2012) (4)
- Chapter 2 Growth of III-V Nitrides by Molecular Beam Epitaxy (1999) (4)
- N-K-Edge EXAFS Study of Epitaxial GaN Films (1996) (4)
- Nitride Semiconductors: Why they Work in Optoelectronic Devices (2011) (4)
- Bulk and Surface Electronic Structure of GaN Measured Using Angle-Resolved Photoemission, Soft X-ray Emission and Soft X-ray Absorption (1996) (4)
- Influence of the impurity concentration on charge carrier dynamics in GaAs films (1990) (4)
- Growth of polycrystalline scandium nitride by ECR-MBE (1996) (4)
- Surface degradation of InxGa1−xN thin films by sputter-anneal processing: A scanning photoemission microscope study (2003) (4)
- Pride: Photonics Research In Interdisciplinary Education (1996) (4)
- Correlation Between Deposition Parameters And Performance Of Sputtered Amorphous Silicon Solar Cells (1983) (3)
- Characterization of a-plane GaN templates grown by HVPE and high efficiency deep UV emitting AlGaN/AlN MQWs grown by MBE on such templates (2014) (3)
- Nitride-based UV detectors improve photodetection (2008) (3)
- Vacuum flashover on diamond-like carbon-coated insulators (1996) (3)
- MBE growth and optical characterization of InGaN/AlGaN multi-quantum wells (1996) (3)
- InN/GaN Superlattices: Band Structures and Their Pressure Dependence (2013) (3)
- Porous Morphology and Oxidation Kinetics in a-Si:H RF Sputtered by He/H 2 (1987) (3)
- Growth mode of nitride semiconductors on nano‐patterned sapphire substrates by molecular beam epitaxy (2016) (3)
- Group-III nitride VCSEL structures grown by molecular beam epitaxy (2000) (3)
- Transient Photoconductivity in GaAs Films Grown by Molecular Beam Epitaxy. (1989) (3)
- Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications (2010) (3)
- Determination of argon in sputtered silicon films by energy-dispersive x-ray fluorescence spectrometry (1981) (3)
- Phase Separation and Ordering in InGaN alloys (1998) (3)
- Plasmonic off-axis unidirectional beaming of luminescence (2013) (3)
- Planarization of GaN by the Etch-Back Method (2005) (3)
- Nitrogen K-edge EXAFS measurements on Mg- and Si-doped GaN. (1999) (3)
- Photoemission study of the electronic structure of wurtzite GaN(0001) surfaces (1997) (3)
- Phase Separation and Atomic Ordering in AlGaInN Alloys (1997) (3)
- Growth of III-nitride QDs and their applications to blue-green LEDs. Phys Stat Sol (a) 205:2560 (2008) (3)
- Tungsten carbide−transition metal multilayers (1990) (3)
- MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors (2003) (3)
- The Effect Of Si And Mg Doping In The Microstructure Of Epitaxially Grown Gan (1997) (2)
- Short period polar and nonpolar m InN/n GaN superlattices (2014) (2)
- Growth and Characterization of III-Nitride Quantum Dots and their Application to Emitters (2008) (2)
- Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization (2008) (2)
- High Density Plasma Etching Damage Effects on Contacts to n -GaN (2000) (2)
- Piezoresistance and Quantum Confinement in Microcrystalline Silicon (1991) (2)
- Erratum: “Distributed Bragg reflectors based on AlN/GaN multilayers” [Appl. Phys. Lett. 74, 1036 (1999)] (1999) (2)
- Solid State Lighting Program (2007) (2)
- Reactive Ion Etching of GaN Thin Films (1993) (2)
- GaN/AlN Nonlinear Optical Waveguides for Ultrafast Intersubband All-Optical Switching (2007) (2)
- Near Band Gap Photoluminescence Broadening In n-Gan Films (1997) (2)
- Sensors based on SiC-AIN MEMS (2004) (2)
- Characterization of AlGaN-based GRINSCH Using TEM and Electron Holography (2013) (2)
- Nitride LEDs based on flat and wrinkled quantum wells (2005) (2)
- GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substrates (2000) (2)
- Intersubband device applications of nitride quantum structures (2010) (2)
- GaN Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy (2004) (2)
- Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering (2006) (1)
- Growth of InGaN films and InGaN/AlGaN multiple quantum wells produced by molecular beam epitaxy (1996) (1)
- Hydrogenation of Gallium Nitride (1993) (1)
- Structural characterization of III-nitride materials and devices (2011) (1)
- Intersubband transitions in GaN-based quantum wells: a new materials platform for infrared device applications (2010) (1)
- Enhanced transmission through quasirandom nanostructured dielectric interfaces via supercritical angle scattering (2007) (1)
- Growth of wide-bandgap nitride semiconductors by MBE (2002) (1)
- Characterization of electron cyclotron resonance plasmas for diamond deposition (1992) (1)
- Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys (1999) (1)
- GaN Schottky diode ultraviolet detectors grown by molecular beam epitaxy (2000) (1)
- Properties of optically smooth diamond thin films produced by ECR-PACVD (1992) (1)
- Enhanced light extraction and spontaneous emission from textured GaN templates formed during growth by the HVPE method (2004) (1)
- Growth of Tetrahedral Phases of Boron Nitride thin Films by Reactive Sputtering (1992) (1)
- Plasmonic collimation and beaming from LED active materials (2013) (1)
- Nitrogen Gas-Cluster Ion Beam – A New Nitrogen Source for GaN Growth (2002) (1)
- One-dimensional carrier localization and effective quantum wire behavior in two-dimensional quantum wedges (2009) (1)
- Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap (1995) (1)
- Physics of Textured III-Nitride Quantum Wells for Applications to LEDs (2005) (1)
- Intersubband nonlinear optical processes in GaN/AlN quantum-well waveguides (2008) (1)
- Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire (1997) (1)
- Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes (2002) (1)
- Temperature dependent photon echoes of a GaN thin film (2012) (1)
- Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy (2009) (1)
- Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN (2006) (1)
- Growth and Structure of Tungsten Carbide-Transition Metal Superlattices (1987) (1)
- Experimental evidence for a kinetic model of hydrogen incorporation into sputtered a‐Si films (2008) (1)
- Charge Carrier Recombination in AlGaAs Studied by Time-Resolved Microwave Conductivity Experiments (1989) (1)
- Electron Microscopy and Spectroscopy of Vapor Deposited Diamond (1988) (1)
- A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates (1999) (1)
- Morphology of Diamond Films Produced by ECR-PACVD (1992) (1)
- Determination of the Percentage of the Cubic and Hexagonal Phases in Gan with Nexafs (1996) (1)
- Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors (2003) (1)
- Soft X-Ray Spectroscopic studies of Intrinsic Quantum Well States, Shallow Core Level Hybridization, and Valence Band Structure in CdO and InN (2008) (0)
- Development of 50 mm diameter non-polar gallium nitride substrates for device applications (2003) (0)
- Growth and characterization of deep ultraviolet emitting AlGaN structures on SiC substrates (2011) (0)
- Deep Ultraviolet Laser Diode for UV-Resonance Enhanced Raman Identification of Biological Agents (2003) (0)
- Influence of extended defects on optoelectronic and electronic nitride devices (2012) (0)
- Diffraction-coupled plasmon-enhanced light emission from InGaN/GaN quantum wells (2011) (0)
- 1-D wavefunction localization and effective quantum wire behavior inside QWs deposited on textured GaN materials (2007) (0)
- Carrier dynamics in Al0.72Ga0.18N multiple quantum wells exhibiting varying internal quantum efficiencies (2011) (0)
- Homoepitaxial growth of GaN/(In,Ga,Al)N MQWs on M-GaN (non-polar) and C-GaN (polar) substrates (2002) (0)
- The role of extended defects in Nitride Semiconductors on the performance of optoelectronic devices (2012) (0)
- Plasmon-enhanced light emission from InGaN quantum wells using lithographically defined nanoparticle arrays (2010) (0)
- Optoelectronic properties of boron compensated amorphous silicon solar cells (1984) (0)
- GaN Devices for High-Efficiency, High Power X-band Radar Performance Enhancement Grown on High Thermal Conductivity AlN Substrates (2004) (0)
- STRUCTURAL FLUCTUATIUNS AND RANDOMNESS IN GaAs-AlxGaI_xAs SUPERLATTICES (1988) (0)
- Materials Issues for Vertical Gallium Nitride Power Devices (2013) (0)
- Gallium Nitride Static Induction Power Transistors (2000) (0)
- Comparison of Physical Properties of Bulk Crystals and Epitaxial Layers of GaN (1996) (0)
- Energetics of Ga and N adatom diffusion on GaN(0001): effect of steady light excitation (2004) (0)
- Sputtered-amorphous-silicon solar cells. Final technical report, July 22, 1980-July 22, 1981 (1981) (0)
- Dispositif optiques comportant des couches semi-conductrices texturees (2005) (0)
- (Invited) Fundamental Differences Between the Traditional III-V Compounds and Nitride Semiconductors (2016) (0)
- ZnS/Si/ZnS Quantum Well Structures for Visible Light Emission (1995) (0)
- Time- resolved photoluminescence studies of Al0.72Ga0.28N films with incommensurate chemical ordering (2009) (0)
- Free Electrons and Resonant Donor State in Gallium Nitride (1995) (0)
- Room temperature low threshold stimulated emission of electron beam-pumped AlGaN-based deep UV laser structures emitting below 250 nm (2012) (0)
- Method to produce a doping gradient in the amorphous silicon and to form an ohmic contact on the photoconductor intrinsic amorphous silicon (1980) (0)
- Plasmon-Enhanced Light Emission from InGaN Quantum Wells Using Chemically Synthesized Silver Nanoparticles (2009) (0)
- X-ray Spectroscopic Studies of the Bulk Electronic Structure of InGaN Alloys (2002) (0)
- Proceedings of wide band gap semiconductors (1992) (0)
- Ab initio study of nitrogen antisites in GaN and AIN (1996) (0)
- Deep ultraviolet LEDs based on AlGaN alloys by plasma-assisted molecular beam epitaxy (2010) (0)
- Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. (1992) (0)
- Ultraviolet light emitting diodes using non-polar A-plane AlGaN multiple quantum wells (2006) (0)
- Comparative Study of GaN/InGaAlN MQWs grown homoepitaxially on (1-100) and (0001) GaN substrates (2003) (0)
- Coupled metallic thin-film/nanoparticle-array systems for far-field engineering of quantum-well luminescence (2012) (0)
- Observation of Quantized Electron Accumulation States in InN(0001 (2006) (0)
- Tunable Surface-Plasmon Resonances in Strongly Coupled Metallo-Dielectric Multiple Layers (2008) (0)
- III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics (2017) (0)
- GaN terahertz photodetectors for the reststrahlen gap of intersubband optoelectronics (2017) (0)
- Pt-SiO 2 Granular Metals for Cryogenic Thermometry in High Magnetic Fields (1990) (0)
- Short-wavelength intersubband light emission from optically pumped GaN/AlN quantum wells (2009) (0)
- Monte Carlo study of the temperature dependent performance of GaN versus GaAs terahertz quantum cascade structures (2008) (0)
- Cs Adsorption of GaN Studied using Angle Resolved Photoemission (1996) (0)
- AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy (2011) (0)
- High reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy (2000) (0)
- Publisher's Note: “AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy” [Appl. Phys. Lett. 98, 081110 (2011)] (2012) (0)
- Sub-250nm room temperature optical gain from AlGaN/AlN multiple quantum wells structures (2012) (0)
- Growth and properties of GaN films (1994) (0)
- Native Paramagnetic Defects in Diamond Films (1993) (0)
- Microstructural Characterization of InN/GaN Multiple Quantum Wells (2008) (0)
- Photonics Research and Development (2010) (0)
- Evidence of deep ultraviolet amplified spontaneous emission in electron beam pumped AlGaN multiple-quantum-well-based structures (2012) (0)
- High efficiency amorphous silicon solar cells fabricated by reactive sputtering (1983) (0)
- Optically pumped intersubband light emission near 2 µm from GaN/AlN quantum wells (2009) (0)
- Sub-250nm room temperature optical gain from AlGaN materials with strong compositional fluctuations (2013) (0)
- Plasmon-Enhanced Near-Green Light Emission from InGaN/GaN Quantum Wells (2011) (0)
- Jacques Isaac Pankove (2017) (0)
- reprint reprint Effect of indium in Al0.65Ga0.35N/ Al0.8Ga0.2NMQWs for thedevelopment of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH) (2016) (0)
- Sputtered amorphous silicon solar cells. Quarterly report No. 2, October 22, 1980-January 22, 1981 (1981) (0)
- Plasmon-Enhanced Emission Rates from III-Nitride Quantum Wells Using Tunable Surface Plasmons (2011) (0)
- Experimental Observation of Sequential Tunneling Transport in GaN/AlGaN Coupled Quantum Wells Grown on a Free-Standing GaN Substrate (2009) (0)
- Progress in amorphous silicon solar cells produced by reactive sputtering (1984) (0)
- Carrier localization and enhanced spontaneous emission due to plasma nanosheath formation in polar nanostructured materials (2006) (0)
- United States Patent ( 19 ) Moustakas et al . ( 54 ) GRADIENT DOPING IN AMORPHOUS SLICON 75 Inventors : (2017) (0)
- Design and Fabrication of GaN-based Permeable-Base Transistors (2003) (0)
- TEMPERATURE DEPENDENCE OF THE ELECTRON DRIFT MOBILITY IN HYDROGENATED a-Si PREPARED BY SPUTTERING (1981) (0)
- Doping studies of n- and p-type Al{sub x}Ga{sub 1{minus}x}N grown by ECR assisted MBE (1997) (0)
- Intensity dependence of photoluminescence iin GaN t (2002) (0)
- High Mobility GaN films Produced by ECR-Assisted MBE (1992) (0)
- Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy (1999) (0)
- Using Polarization Effects in Deep UV Nitride Emitters (2012) (0)
- III-Nitride UV Detector Arrays Fabricated by Combining HVPE Lateral Epitaxial Overgrowth and MBE Methods (2002) (0)
- Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy (2017) (0)
- A process for the manufacture of amorphous silicon and produced by this process apparatus (1980) (0)
- AlN/GaN/AlGaN Coupled Quantum Wells for Short-Wavelength Intersubband Devices (2007) (0)
- Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy (1993) (0)
- Relaxation of photoinduced sub‐bandgap absorption in a‐Si:H (2008) (0)
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