Thomas Lee Paoli

Thomas Lee Paoli's AcademicInfluence.com Rankings

Thomas Lee Paoli

Engineering

#6271

World Rank

#7587

Historical Rank

Photonics

#60

World Rank

#61

Historical Rank

Electrical Engineering

#1843

World Rank

#1945

Historical Rank

engineering Degrees

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Engineering

Thomas Lee Paoli's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering Stanford University

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Thomas Lee Paoli's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Gain spectra in GaAs double−heterostructure injection lasers (1975) (828)
cw degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain (1973) (300)
Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion (1986) (185)
Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror (1983) (169)
Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures (1987) (135)
Direct modulation of semiconductor lasers (1970) (118)
Waveguiding in a stripe-geometry junction laser (1977) (112)
Changes in the optical properties of CW (AlGa)As junction lasers during accelerated aging (1977) (105)
Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes (1994) (105)
Nonlinearities in the emission characteristics of stripe-geometry (AlGa)As double-heterostructure junction lasers (1976) (100)
Saturation of the junction voltage in stripe‐geometry (AlGa)As double‐heterostructure junction lasers (1976) (100)
Monolithic waveguide coupled cavity lasers and modulators fabricated by impurity induced disordering (1988) (88)
Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers (1976) (87)
A new technique for measuring the thermal impedance of junction lasers (1975) (86)
Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion (1983) (84)
Saturable absorption effects in the self‐pulsing (AlGa)As junction laser (1979) (74)
Low threshold planar buried heterostructure lasers fabricated by impurity‐induced disordering (1985) (72)
STRIPE‐GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS: MODE STRUCTURE AND cw OPERATION ABOVE ROOM TEMPERATURE (1971) (69)
Coupled Longitudinal Mode Pulsing in Semiconductor Lasers (1969) (69)
GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement (1974) (67)
Study of intensity pulsations in proton‐bombarded stripe‐geometry double‐heterostructure AlxGa1−xAs lasers (1979) (60)
Noise characteristics of stripe-geometry double-heterostructure junction lasers operating continuously - I. Intensity noise at room temperature (1975) (58)
OPTICAL COUPLING OF ADJACENT STRIPE‐GEOMETRY JUNCTION LASERS (1970) (57)
Observation of supermodes in a phase‐locked diode laser array (1984) (52)
cw degradation at 300°K of GaAs double‐heterostructure junction lasers. I. Emission spectra (1973) (51)
Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity (1986) (48)
Phase‐locked (GaAl)As laser emitting 1.5 W cw per mirror (1983) (45)
Optical Pulses from cw GaAs Injection Lasers (1969) (44)
Continuous microwave oscillations in GaAs junction lasers (1968) (44)
Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant (1982) (41)
Saturation behavior of the spontaneous emission from double-heterostructure junction lasers operating high above threshold (1973) (41)
Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering (1986) (40)
High power (2.1 W) 10‐stripe AlGaAs laser arrays with Si disordered facet windows (1986) (40)
Frequency stabilization and narrowing of optical pulses from CW GaAs injection lasers (1970) (39)
Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering (1984) (39)
An analysis of cleaved coupled-cavity lasers (1984) (39)
Dynamic characteristics of phase-locked multiple quantum well injection lasers (1985) (37)
Observation of Intrinsic Quantum Fluctuations in Semiconductor Lasers (1970) (36)
Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering (1986) (33)
OPTICAL SELF‐PULSING OF JUNCTION LASERS OPERATING CONTINUOUSLY AT ROOM TEMPERATURE (1971) (33)
High power cw operation of phased array diode lasers with diffraction limited output beam (1985) (33)
Zero‐order transverse mode operation of GaAs double‐heterostructure lasers with thick waveguides (1973) (32)
Resonant modes of GaAs junction lasers - II: High-injection level (1969) (32)
Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator (2002) (32)
Near‐field and far‐field patterns of phase‐locked semiconductor laser arrays (1983) (30)
Thermal‐anneal wavelength modification of multiple‐well p‐n AlxGa1−x As‐GaAs quantum‐well lasers (1984) (28)
Low threshold, 633 nm, single tensile‐strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laser (1992) (27)
Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices (1985) (26)
Near-threshold behavior of the intrinsic resonant frequency in a semiconductor laser (1979) (26)
Transverse modes of gain‐guided coupled‐stripe lasers: External cavity control of the emitter spacing (1985) (26)
Intrinsic fluctuations in the output intensity of double‐heterostructure junction lasers operating continuously at 300°K (1974) (25)
Growth and characterization of AlGaAs/GaAs quantum well lasers (1984) (25)
Suppression of intensity self-pulsations in CW junction lasers by frequency-selective optical feedback (1975) (24)
Single longitudinal mode operation of cw junction lasers by frequency‐selective optical feedback (1974) (23)
Tensile-strained AlGaAsP and InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P quantum well laser diodes for TM-mode emission in the wavelength range 650 (1994) (22)
Stabilization of aging‐induced self‐pulsations and the elimination of an initial temporally saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings (1979) (22)
Observations of negative resistance associated with superlinear emission characteristics of (Al, Ga) As double-heterostructure lasers (1980) (21)
AlGaAs multiple‐wavelength light‐emitting bar grown by laser‐assisted metalorganic chemical vapor deposition (1988) (21)
Individual spatial modes of a phase-locked injection laser array (1985) (20)
Phased array diode lasers (1984) (20)
One watt CW visible single-quantum-well lasers (1983) (19)
Far‐field supermode patterns of a multiple‐stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity (1984) (19)
Photopumped low threshold Alx″Ga1−x″As ‐Alx′Ga1−x′As‐AlxGa1−xAs (x″∼0.85, x′∼0.3, x=0) single quantum well lasers (1983) (19)
cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW (1983) (19)
Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity‐induced disordering (1987) (19)
FREQUENCY PULLING AND PULSE POSITION MODULATION OF PULSING cw GaAs INJECTION LASERS (1969) (19)
Opto-electronic device structures fabricated by impurity induced disordering (1986) (18)
Reduction in the rate of increase of spontaneous emission from double‐heterostructure injection lasers at threshold (1972) (18)
Broadband tuning (ΔE∼100 meV) of Alx Ga1−xAs quantum well heterostructure lasers with an external grating (1983) (17)
Properties of closely spaced independently addressable lasers fabricated by impurity-induced disordering (1990) (17)
Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering (1988) (17)
Supermodes of multiple‐stripe quantum‐well heterostructure laser diodes operated (cw, 300 K) in an external‐grating cavity (1985) (17)
300 mW operation of a surface-emitting phase-locked array of diode lasers (1987) (16)
Theoretical derivatives of the electrical characteristic of a junction laser operated in the vicinity of threshold (1978) (16)
Magnitude of the intrinsic resonant frequency in a semiconductor laser (1981) (16)
Accelerated aging of 100‐mW cw multiple‐stripe GaAlAs lasers grown by metalorganic chemical vapor deposition (1985) (16)
Carrier trapping in room‐temperature, time‐resolved photoluminescence of a GaAs/AlxGa1−xAs multiple quantum well structure grown by metalorganic chemical vapor deposition (1985) (15)
Mode configurations in second-order mode-locked lasers (1972) (15)
Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing (1983) (14)
Recent developments in surface-emitting distributed-feedback arrays (1990) (14)
2.4 W CW 770 nm laser arrays with nonabsorbing mirrors (1987) (13)
VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si (1987) (13)
High‐power multiple‐emitter AlGaAs superluminescent diodes (1985) (13)
Optical response of a stripe-geometry junction laser to sinusoidal current modulation at 1.2 GHz (1981) (13)
Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source (1987) (13)
Observation of second derivatives of the electrical characteristics of double-heterostructure junction lasers (1976) (13)
CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41-52) 22 Soft x-ray production from transition radiation using thin foils (1981) (13)
Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−x barriers (1986) (13)
Layer disordering of GaAs‐AlGaAs superlattices by diffusion of laser‐incorporated Si (1988) (12)
Low‐threshold disorder‐defined buried‐heterostructure AlGaAs diode lasers by anisotropic diffusion of laser‐incorporated Si (1987) (12)
Low threshold GaxIn1−xP/(AlyGa1−y)0.5In0.5P strained quantum well lasers (1992) (12)
High‐energy (λ≲7300 Å) 300 K operation of single‐ and multiple‐stripe quantum‐well heterostructure laser diodes in an external grating cavity (1984) (12)
Derivative measurement by frequency mixing (1976) (11)
Long‐lived GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy (1983) (11)
Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array (1987) (11)
Depolarization of the lasing emission from CW double-heterostructure junction lasers (1975) (11)
Low threshold buried heterostructure quantum well diode lasers by laser‐assisted disordering (1987) (11)
SELF‐STABILIZATION AND NARROWING OF OPTICAL PULSES FROM GaAs JUNCTION LASERS BY INJECTION CURRENT FEEDBACK (1970) (11)
Dual-polarization, single quantum-well AlGaInP laser diode structure (1994) (11)
In situ laser patterned desorption of GaAs quantum wells for monolithic multiple wavelength diode lasers (1989) (10)
Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes (1985) (10)
Impurity-induced disordering of AlxGa1−xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1−x barriers (1987) (10)
Below‐threshold waveguiding in a stripe‐geometry junction laser (1977) (9)
Multiple-wavelength diode laser superarray (1990) (9)
Impurity‐induced disordering of single well AlxGa1−xAs‐GaAs quantum well heterostructures (1984) (9)
Diffraction effects in a diode array traveling-wave amplifier (1987) (9)
Determination of the lasing threshold in stripe-geometry double-heterostructure junction lasers (1976) (9)
Characteristics of bistable CW GaAs junction lasers operating above the delay-transition temperature (1970) (7)
Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser (2000) (7)
High‐energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1−x barriers (ℏω≳EL, EX) (1986) (7)
Low‐threshold gain‐guided coupled‐stripe quantum well diode lasers by laser‐assisted processing (1987) (6)
Bistable operation of CW junction lasers due to saturable absorbing centers (1970) (5)
CW high-power single-mode operation of gain-guided stripe-geometry multiple-quantum-well lasers (1983) (5)
Mode‐locked coupled‐stripe quantum well laser operation (λ∼7350 Å) in a tunable (Δℏω∼37 meV>kT) external grating cavity (1985) (5)
Low threshold buried-heterostructure quantum well lasers by excimer laser assisted disordering (1988) (5)
Transverse mode control of junction lasers optically coupled to single-mode fibers (1975) (5)
Locking of spontaneously pulsing CW GaAs injection lasers by fractional-harmonic current modulation (1970) (5)
Photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping (1986) (5)
Modulation characteristics of cw laser diodes (1976) (5)
Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers (1986) (4)
Coupling strength and influence in cleaved-coupled-cavity lasers (1984) (4)
Threshold analysis of cleaved-coupled-cavity lasers (1984) (4)
Electrical interactions of a superlinear laser diode with its external circuit (1980) (4)
Impurity Induced Disordering Of Heterojunction Interfaces: Phenomenology And Laser Device Applications (1987) (4)
Statistical characterization of the self-induced intensity modulation exhibited by AlGaAs junction lasers with proton stripes (1980) (4)
Dependence of central-lobe output power on fill factor of an in-phase laser array (1987) (4)
Improvements of the electro‐optic properties of (Al,Ga)As lasers by means of reduced reflection dielectric facet coatings (1981) (4)
Multi-wavelength semiconductor laser (1992) (3)
Analysis of cleaved coupled-cavity (C3) diode lasers - Part II: Frequency modulation, above threshold operation, and residual amplitude modulation (1985) (3)
CW operation of a cleaved-coupled-cavity array of phase-locked GaAlAs lasers (1985) (3)
Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x ‘‘barriers’’ (1986) (3)
Current confinement in a GaAs/AlGaAs heterostructure by in situ laser‐patterned desorption of a current‐blocking quantum well (1990) (3)
Polarized electroluminescence spectra of GaxIn1−xP/(Al0.6Ga0.4)0.5In0.5P quantum wells (1993) (3)
Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers (1987) (3)
Dynamic Properties of Phased-Array Multiple Quantum Well Injection Lasers (1984) (2)
Multiple-wavelength array of buried heterostructure lasers (1990) (2)
Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers (1992) (2)
Stabilization of aging-induced self-pulsations and the elimination of an initial saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings (1979) (2)
Anomalous threshold current and time delays in index-guided AlxGa1−xAs-GaAs quantum-well lasers (1987) (2)
Frequency Modulation in the Cleaved Coupled Cavity (C 3 ) Laser (1984) (2)
ROLE OF THE PHOTON FIELD COMMUTATOR IN THE QUANTUM THEORY OF INTENSITY CORRELATIONS. (1967) (2)
Optical derivative measurements of the electrical parameters for a junction diode (1979) (2)
Frequency modulation in the cleaved-coupled-cavity laser (1984) (2)
Cleaved-coupled-cavity laser analysis (A) (1984) (1)
Quantum well laser operation at low temperature in strong magnetic fields (1983) (1)
Modulation of diode lasers (1977) (1)
Lifetime of Diode Laser Arrays Operating at 200 mW CW (1985) (1)
High-power diode laser arrays with silicon impurity-induced disordered nonabsorbing mirrors (1987) (1)
Far-field characterization of diode lasers with standard vidicons. (1983) (1)
Phase-locked (GaAl)As diode-laser arrays (A) (1983) (1)
Laser-Patterned Desorption Of GaAs In An Inverted Metalorganic Chemical Vapor Deposition Reactor (1989) (1)
Time-Resolved Photoluminescence of GaAs/Al x Ga 1−x As Quantum Well Structures Grown by Metal-Organic Chemical Vapor Deposition (1985) (1)
Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor (1989) (1)
Optoelectronic saturation behavior of a p-n junction (1980) (1)
A quantum theory of photodetector correlations (1967) (0)
Optical model for radiation patterns of phase-locked diode laser arrays (1985) (0)
Impurity-Induced Disordering and Laser Device Applications (1987) (0)
Semiconductor lasers grown by MO-CVD (1982) (0)
GaA1As/CaAs Quantum-Well Lasers by Metalorganic Chemical-Vapor Deposition (1984) (0)
Intensity noise in junction lasers operating continuously at room temperature (1974) (0)
Array to operate modulation solid laser array having reduced thermal crosstalk and method thereof (1991) (0)
Visible Semiconductor Lasers (1993) (0)
Variation correction method and apparatus using a controllable in the direction of jet / raster output scanner with a polygon and a spherical optics (1994) (0)
GaAlAs/GaAs quantum-well lasers by metalorganic chemical-vapor deposition (A) (1984) (0)
Monolithic integration of a laser and modulator and use in Q-switched lasers (1988) (0)
IVA-6 high-energy (λ ≤ 7300 Å) 300-K operations of single- and multiple-stripe quantum-well heterostructure laser diodes in an external grating cavity (1984) (0)
Semiconductor lasers - 1975 [Special Issue introduction] (1975) (0)
Laser Incorporation of Silicon into GaAs-AlGaAs Heterostructures (1988) (0)
Monolithic semiconductor light emission array (1994) (0)
Testing holder for lasers with rectangular studs. (1982) (0)
Multiple close proximity independently addressable lasers with minimal crosstalk (1990) (0)
Multiple arrangement of lasers. (1986) (0)
Tensile-S trained AlGaAsP- (1994) (0)
Semiconductor laser provided with dynamic output stabilizing integrated phototransistor (1993) (0)
A process for thermal patterning of semiconductor substrates (1989) (0)
Focused-ion-beam micromachined coupled-cavity and surface-emitting arrays of diode lasers (1987) (0)
InGaN MQW laser diode with integrated intracavity electroabsorption modulator (2002) (0)
AlGaAs laser arrays with Si disordered facet windows for high-power applications (1987) (0)
Polygon ros image forming device (1994) (0)
VB-6 continuous room-temperature laser operation of Al x Ga 1-x As-GaAs quantum well heterostructures grown on Si (1987) (0)
In situ patterning of impurity induced layer disordering and other applications of laser patterned desorption (2008) (0)
Highly efficient long-lived AIGaAs lasers fabricated by silicon impurity-induced disordering (1986) (0)
CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF AL//XGA//1// minus //XAS-GAAS QUANTUM WELL HETEROSTRUCTURES GROWN ON SI. (1987) (0)
Laser-induced disordering of GaAs/Al-GaAs heterostructure layers (1987) (0)
Time-Resolved Photoluminescence of GaAs/AlxGa1−xAs Quantum Well Structures Grown by Metal-Organic Chemical Vapor Deposition (1985) (0)
Method for producing p-type impurity induced layer disordering and device structure therefor (1994) (0)
Impurity-induced layer disordering of quantum-well heterostructures for integrated optoelectronics (1991) (0)
Low Threshold Ga/sub x/ln/sub 1-x/P(X=0.4, 0.6)/(AI/sub x/Ga/sub 1-x/)/sub 0.5/ln/sub 0.5/P Strained Quantum Well Layers (1992) (0)
Integration of Optical and Electronic Devices by Impurity Induced Layer Disordering (1991) (0)
Laser-Assisted Processing Of GaAs-AlGaAs Optoelectronic Devices (1988) (0)
IIIA-3 high-power superluminescent light-emitting diodes with ultralow-reflectivity facet coatings (1985) (0)
Monolithic semiconductor and control method of coherent radiation (1992) (0)
Properties of GaAlAs/GaAs Quantum Well Heterostructures Grown by Metalorganic Chemical Vapor Deposition (1985) (0)
A Model For The Nearly Single Lobed Far-Field In A Diode Array Traveling-Wave Amplifier (1988) (0)
High-power (2.5-W) cw phase-locked diode-laser arrays with coated facets (1983) (0)
Impurity-induced disordering in multilayer structures (1986) (0)
Properties of stripe geometry double-heterostructure junction lasers operating continuously at and above room temperature (1970) (0)
CW degradation at room temperature of GaAs double-heterostructure junction lasers (1973) (0)
In Situ Control of Energy Bandgap by Laser Enhanced Metalorganic Chemical Vapor Deposition (1988) (0)
Strained GaJn 1 -zP/(AIGa)o, 5P Heterostructures and Quantum-Well Laser Diodes (1994) (0)
IVB-3 long-lived GaAlAs laser diodes with multiple quantum wells grown by organometallic vapor phase epitaxy (1983) (0)
IVA-8 low-threshold AlGaAs laser diodes fabricated by silicon impurity-induced disordering (1985) (0)
Time-resolved photoluminescence from GaAs/Al x -Ga 1-x As quantum wells grown by metal-organic chemical vapor deposition (1985) (0)
United States Patent ( 19 ) Epler et al . 54 METHOD OF INSITU PHOTO INDUCED EVAPORATION ENHANCEMENT OF COMPOUND THEN FILMS DURING OR AFTER EPITAXIAL GROWTH (2017) (0)
Laser apparatus comprising means for detecting the laser power (1991) (0)

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