Thomas Lee Paoli
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Thomas Lee Paoliengineering Degrees
Engineering
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Photonics
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Electrical Engineering
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Engineering
Thomas Lee Paoli's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering Stanford University
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(Suggest an Edit or Addition)Thomas Lee Paoli's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Gain spectra in GaAs double−heterostructure injection lasers (1975) (828)
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain (1973) (300)
- Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion (1986) (185)
- Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror (1983) (169)
- Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures (1987) (135)
- Direct modulation of semiconductor lasers (1970) (118)
- Waveguiding in a stripe-geometry junction laser (1977) (112)
- Changes in the optical properties of CW (AlGa)As junction lasers during accelerated aging (1977) (105)
- Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes (1994) (105)
- Nonlinearities in the emission characteristics of stripe-geometry (AlGa)As double-heterostructure junction lasers (1976) (100)
- Saturation of the junction voltage in stripe‐geometry (AlGa)As double‐heterostructure junction lasers (1976) (100)
- Monolithic waveguide coupled cavity lasers and modulators fabricated by impurity induced disordering (1988) (88)
- Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers (1976) (87)
- A new technique for measuring the thermal impedance of junction lasers (1975) (86)
- Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion (1983) (84)
- Saturable absorption effects in the self‐pulsing (AlGa)As junction laser (1979) (74)
- Low threshold planar buried heterostructure lasers fabricated by impurity‐induced disordering (1985) (72)
- STRIPE‐GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS: MODE STRUCTURE AND cw OPERATION ABOVE ROOM TEMPERATURE (1971) (69)
- Coupled Longitudinal Mode Pulsing in Semiconductor Lasers (1969) (69)
- GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement (1974) (67)
- Study of intensity pulsations in proton‐bombarded stripe‐geometry double‐heterostructure AlxGa1−xAs lasers (1979) (60)
- Noise characteristics of stripe-geometry double-heterostructure junction lasers operating continuously - I. Intensity noise at room temperature (1975) (58)
- OPTICAL COUPLING OF ADJACENT STRIPE‐GEOMETRY JUNCTION LASERS (1970) (57)
- Observation of supermodes in a phase‐locked diode laser array (1984) (52)
- cw degradation at 300°K of GaAs double‐heterostructure junction lasers. I. Emission spectra (1973) (51)
- Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity (1986) (48)
- Phase‐locked (GaAl)As laser emitting 1.5 W cw per mirror (1983) (45)
- Optical Pulses from cw GaAs Injection Lasers (1969) (44)
- Continuous microwave oscillations in GaAs junction lasers (1968) (44)
- Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant (1982) (41)
- Saturation behavior of the spontaneous emission from double-heterostructure junction lasers operating high above threshold (1973) (41)
- Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering (1986) (40)
- High power (2.1 W) 10‐stripe AlGaAs laser arrays with Si disordered facet windows (1986) (40)
- Frequency stabilization and narrowing of optical pulses from CW GaAs injection lasers (1970) (39)
- Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering (1984) (39)
- An analysis of cleaved coupled-cavity lasers (1984) (39)
- Dynamic characteristics of phase-locked multiple quantum well injection lasers (1985) (37)
- Observation of Intrinsic Quantum Fluctuations in Semiconductor Lasers (1970) (36)
- Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering (1986) (33)
- OPTICAL SELF‐PULSING OF JUNCTION LASERS OPERATING CONTINUOUSLY AT ROOM TEMPERATURE (1971) (33)
- High power cw operation of phased array diode lasers with diffraction limited output beam (1985) (33)
- Zero‐order transverse mode operation of GaAs double‐heterostructure lasers with thick waveguides (1973) (32)
- Resonant modes of GaAs junction lasers - II: High-injection level (1969) (32)
- Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator (2002) (32)
- Near‐field and far‐field patterns of phase‐locked semiconductor laser arrays (1983) (30)
- Thermal‐anneal wavelength modification of multiple‐well p‐n AlxGa1−x As‐GaAs quantum‐well lasers (1984) (28)
- Low threshold, 633 nm, single tensile‐strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laser (1992) (27)
- Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices (1985) (26)
- Near-threshold behavior of the intrinsic resonant frequency in a semiconductor laser (1979) (26)
- Transverse modes of gain‐guided coupled‐stripe lasers: External cavity control of the emitter spacing (1985) (26)
- Intrinsic fluctuations in the output intensity of double‐heterostructure junction lasers operating continuously at 300°K (1974) (25)
- Growth and characterization of AlGaAs/GaAs quantum well lasers (1984) (25)
- Suppression of intensity self-pulsations in CW junction lasers by frequency-selective optical feedback (1975) (24)
- Single longitudinal mode operation of cw junction lasers by frequency‐selective optical feedback (1974) (23)
- Tensile-strained AlGaAsP and InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P quantum well laser diodes for TM-mode emission in the wavelength range 650 (1994) (22)
- Stabilization of aging‐induced self‐pulsations and the elimination of an initial temporally saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings (1979) (22)
- Observations of negative resistance associated with superlinear emission characteristics of (Al, Ga) As double-heterostructure lasers (1980) (21)
- AlGaAs multiple‐wavelength light‐emitting bar grown by laser‐assisted metalorganic chemical vapor deposition (1988) (21)
- Individual spatial modes of a phase-locked injection laser array (1985) (20)
- Phased array diode lasers (1984) (20)
- One watt CW visible single-quantum-well lasers (1983) (19)
- Far‐field supermode patterns of a multiple‐stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity (1984) (19)
- Photopumped low threshold Alx″Ga1−x″As ‐Alx′Ga1−x′As‐AlxGa1−xAs (x″∼0.85, x′∼0.3, x=0) single quantum well lasers (1983) (19)
- cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW (1983) (19)
- Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity‐induced disordering (1987) (19)
- FREQUENCY PULLING AND PULSE POSITION MODULATION OF PULSING cw GaAs INJECTION LASERS (1969) (19)
- Opto-electronic device structures fabricated by impurity induced disordering (1986) (18)
- Reduction in the rate of increase of spontaneous emission from double‐heterostructure injection lasers at threshold (1972) (18)
- Broadband tuning (ΔE∼100 meV) of Alx Ga1−xAs quantum well heterostructure lasers with an external grating (1983) (17)
- Properties of closely spaced independently addressable lasers fabricated by impurity-induced disordering (1990) (17)
- Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering (1988) (17)
- Supermodes of multiple‐stripe quantum‐well heterostructure laser diodes operated (cw, 300 K) in an external‐grating cavity (1985) (17)
- 300 mW operation of a surface-emitting phase-locked array of diode lasers (1987) (16)
- Theoretical derivatives of the electrical characteristic of a junction laser operated in the vicinity of threshold (1978) (16)
- Magnitude of the intrinsic resonant frequency in a semiconductor laser (1981) (16)
- Accelerated aging of 100‐mW cw multiple‐stripe GaAlAs lasers grown by metalorganic chemical vapor deposition (1985) (16)
- Carrier trapping in room‐temperature, time‐resolved photoluminescence of a GaAs/AlxGa1−xAs multiple quantum well structure grown by metalorganic chemical vapor deposition (1985) (15)
- Mode configurations in second-order mode-locked lasers (1972) (15)
- Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing (1983) (14)
- Recent developments in surface-emitting distributed-feedback arrays (1990) (14)
- 2.4 W CW 770 nm laser arrays with nonabsorbing mirrors (1987) (13)
- VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si (1987) (13)
- High‐power multiple‐emitter AlGaAs superluminescent diodes (1985) (13)
- Optical response of a stripe-geometry junction laser to sinusoidal current modulation at 1.2 GHz (1981) (13)
- Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source (1987) (13)
- Observation of second derivatives of the electrical characteristics of double-heterostructure junction lasers (1976) (13)
- CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41-52) 22 Soft x-ray production from transition radiation using thin foils (1981) (13)
- Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−x barriers (1986) (13)
- Layer disordering of GaAs‐AlGaAs superlattices by diffusion of laser‐incorporated Si (1988) (12)
- Low‐threshold disorder‐defined buried‐heterostructure AlGaAs diode lasers by anisotropic diffusion of laser‐incorporated Si (1987) (12)
- Low threshold GaxIn1−xP/(AlyGa1−y)0.5In0.5P strained quantum well lasers (1992) (12)
- High‐energy (λ≲7300 Å) 300 K operation of single‐ and multiple‐stripe quantum‐well heterostructure laser diodes in an external grating cavity (1984) (12)
- Derivative measurement by frequency mixing (1976) (11)
- Long‐lived GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy (1983) (11)
- Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array (1987) (11)
- Depolarization of the lasing emission from CW double-heterostructure junction lasers (1975) (11)
- Low threshold buried heterostructure quantum well diode lasers by laser‐assisted disordering (1987) (11)
- SELF‐STABILIZATION AND NARROWING OF OPTICAL PULSES FROM GaAs JUNCTION LASERS BY INJECTION CURRENT FEEDBACK (1970) (11)
- Dual-polarization, single quantum-well AlGaInP laser diode structure (1994) (11)
- In situ laser patterned desorption of GaAs quantum wells for monolithic multiple wavelength diode lasers (1989) (10)
- Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes (1985) (10)
- Impurity-induced disordering of AlxGa1−xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1−x barriers (1987) (10)
- Below‐threshold waveguiding in a stripe‐geometry junction laser (1977) (9)
- Multiple-wavelength diode laser superarray (1990) (9)
- Impurity‐induced disordering of single well AlxGa1−xAs‐GaAs quantum well heterostructures (1984) (9)
- Diffraction effects in a diode array traveling-wave amplifier (1987) (9)
- Determination of the lasing threshold in stripe-geometry double-heterostructure junction lasers (1976) (9)
- Characteristics of bistable CW GaAs junction lasers operating above the delay-transition temperature (1970) (7)
- Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser (2000) (7)
- High‐energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1−x barriers (ℏω≳EL, EX) (1986) (7)
- Low‐threshold gain‐guided coupled‐stripe quantum well diode lasers by laser‐assisted processing (1987) (6)
- Bistable operation of CW junction lasers due to saturable absorbing centers (1970) (5)
- CW high-power single-mode operation of gain-guided stripe-geometry multiple-quantum-well lasers (1983) (5)
- Mode‐locked coupled‐stripe quantum well laser operation (λ∼7350 Å) in a tunable (Δℏω∼37 meV>kT) external grating cavity (1985) (5)
- Low threshold buried-heterostructure quantum well lasers by excimer laser assisted disordering (1988) (5)
- Transverse mode control of junction lasers optically coupled to single-mode fibers (1975) (5)
- Locking of spontaneously pulsing CW GaAs injection lasers by fractional-harmonic current modulation (1970) (5)
- Photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping (1986) (5)
- Modulation characteristics of cw laser diodes (1976) (5)
- Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers (1986) (4)
- Coupling strength and influence in cleaved-coupled-cavity lasers (1984) (4)
- Threshold analysis of cleaved-coupled-cavity lasers (1984) (4)
- Electrical interactions of a superlinear laser diode with its external circuit (1980) (4)
- Impurity Induced Disordering Of Heterojunction Interfaces: Phenomenology And Laser Device Applications (1987) (4)
- Statistical characterization of the self-induced intensity modulation exhibited by AlGaAs junction lasers with proton stripes (1980) (4)
- Dependence of central-lobe output power on fill factor of an in-phase laser array (1987) (4)
- Improvements of the electro‐optic properties of (Al,Ga)As lasers by means of reduced reflection dielectric facet coatings (1981) (4)
- Multi-wavelength semiconductor laser (1992) (3)
- Analysis of cleaved coupled-cavity (C3) diode lasers - Part II: Frequency modulation, above threshold operation, and residual amplitude modulation (1985) (3)
- CW operation of a cleaved-coupled-cavity array of phase-locked GaAlAs lasers (1985) (3)
- Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x ‘‘barriers’’ (1986) (3)
- Current confinement in a GaAs/AlGaAs heterostructure by in situ laser‐patterned desorption of a current‐blocking quantum well (1990) (3)
- Polarized electroluminescence spectra of GaxIn1−xP/(Al0.6Ga0.4)0.5In0.5P quantum wells (1993) (3)
- Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers (1987) (3)
- Dynamic Properties of Phased-Array Multiple Quantum Well Injection Lasers (1984) (2)
- Multiple-wavelength array of buried heterostructure lasers (1990) (2)
- Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers (1992) (2)
- Stabilization of aging-induced self-pulsations and the elimination of an initial saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings (1979) (2)
- Anomalous threshold current and time delays in index-guided AlxGa1−xAs-GaAs quantum-well lasers (1987) (2)
- Frequency Modulation in the Cleaved Coupled Cavity (C 3 ) Laser (1984) (2)
- ROLE OF THE PHOTON FIELD COMMUTATOR IN THE QUANTUM THEORY OF INTENSITY CORRELATIONS. (1967) (2)
- Optical derivative measurements of the electrical parameters for a junction diode (1979) (2)
- Frequency modulation in the cleaved-coupled-cavity laser (1984) (2)
- Cleaved-coupled-cavity laser analysis (A) (1984) (1)
- Quantum well laser operation at low temperature in strong magnetic fields (1983) (1)
- Modulation of diode lasers (1977) (1)
- Lifetime of Diode Laser Arrays Operating at 200 mW CW (1985) (1)
- High-power diode laser arrays with silicon impurity-induced disordered nonabsorbing mirrors (1987) (1)
- Far-field characterization of diode lasers with standard vidicons. (1983) (1)
- Phase-locked (GaAl)As diode-laser arrays (A) (1983) (1)
- Laser-Patterned Desorption Of GaAs In An Inverted Metalorganic Chemical Vapor Deposition Reactor (1989) (1)
- Time-Resolved Photoluminescence of GaAs/Al x Ga 1−x As Quantum Well Structures Grown by Metal-Organic Chemical Vapor Deposition (1985) (1)
- Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor (1989) (1)
- Optoelectronic saturation behavior of a p-n junction (1980) (1)
- A quantum theory of photodetector correlations (1967) (0)
- Optical model for radiation patterns of phase-locked diode laser arrays (1985) (0)
- Impurity-Induced Disordering and Laser Device Applications (1987) (0)
- Semiconductor lasers grown by MO-CVD (1982) (0)
- GaA1As/CaAs Quantum-Well Lasers by Metalorganic Chemical-Vapor Deposition (1984) (0)
- Intensity noise in junction lasers operating continuously at room temperature (1974) (0)
- Array to operate modulation solid laser array having reduced thermal crosstalk and method thereof (1991) (0)
- Visible Semiconductor Lasers (1993) (0)
- Variation correction method and apparatus using a controllable in the direction of jet / raster output scanner with a polygon and a spherical optics (1994) (0)
- GaAlAs/GaAs quantum-well lasers by metalorganic chemical-vapor deposition (A) (1984) (0)
- Monolithic integration of a laser and modulator and use in Q-switched lasers (1988) (0)
- IVA-6 high-energy (&#955; &#8804; 7300 &#197;) 300-K operations of single- and multiple-stripe quantum-well heterostructure laser diodes in an external grating cavity (1984) (0)
- Semiconductor lasers - 1975 [Special Issue introduction] (1975) (0)
- Laser Incorporation of Silicon into GaAs-AlGaAs Heterostructures (1988) (0)
- Monolithic semiconductor light emission array (1994) (0)
- Testing holder for lasers with rectangular studs. (1982) (0)
- Multiple close proximity independently addressable lasers with minimal crosstalk (1990) (0)
- Multiple arrangement of lasers. (1986) (0)
- Tensile-S trained AlGaAsP- (1994) (0)
- Semiconductor laser provided with dynamic output stabilizing integrated phototransistor (1993) (0)
- A process for thermal patterning of semiconductor substrates (1989) (0)
- Focused-ion-beam micromachined coupled-cavity and surface-emitting arrays of diode lasers (1987) (0)
- InGaN MQW laser diode with integrated intracavity electroabsorption modulator (2002) (0)
- AlGaAs laser arrays with Si disordered facet windows for high-power applications (1987) (0)
- Polygon ros image forming device (1994) (0)
- VB-6 continuous room-temperature laser operation of Al x Ga 1-x As-GaAs quantum well heterostructures grown on Si (1987) (0)
- In situ patterning of impurity induced layer disordering and other applications of laser patterned desorption (2008) (0)
- Highly efficient long-lived AIGaAs lasers fabricated by silicon impurity-induced disordering (1986) (0)
- CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF AL//XGA//1// minus //XAS-GAAS QUANTUM WELL HETEROSTRUCTURES GROWN ON SI. (1987) (0)
- Laser-induced disordering of GaAs/Al-GaAs heterostructure layers (1987) (0)
- Time-Resolved Photoluminescence of GaAs/AlxGa1−xAs Quantum Well Structures Grown by Metal-Organic Chemical Vapor Deposition (1985) (0)
- Method for producing p-type impurity induced layer disordering and device structure therefor (1994) (0)
- Impurity-induced layer disordering of quantum-well heterostructures for integrated optoelectronics (1991) (0)
- Low Threshold Ga/sub x/ln/sub 1-x/P(X=0.4, 0.6)/(AI/sub x/Ga/sub 1-x/)/sub 0.5/ln/sub 0.5/P Strained Quantum Well Layers (1992) (0)
- Integration of Optical and Electronic Devices by Impurity Induced Layer Disordering (1991) (0)
- Laser-Assisted Processing Of GaAs-AlGaAs Optoelectronic Devices (1988) (0)
- IIIA-3 high-power superluminescent light-emitting diodes with ultralow-reflectivity facet coatings (1985) (0)
- Monolithic semiconductor and control method of coherent radiation (1992) (0)
- Properties of GaAlAs/GaAs Quantum Well Heterostructures Grown by Metalorganic Chemical Vapor Deposition (1985) (0)
- A Model For The Nearly Single Lobed Far-Field In A Diode Array Traveling-Wave Amplifier (1988) (0)
- High-power (2.5-W) cw phase-locked diode-laser arrays with coated facets (1983) (0)
- Impurity-induced disordering in multilayer structures (1986) (0)
- Properties of stripe geometry double-heterostructure junction lasers operating continuously at and above room temperature (1970) (0)
- CW degradation at room temperature of GaAs double-heterostructure junction lasers (1973) (0)
- In Situ Control of Energy Bandgap by Laser Enhanced Metalorganic Chemical Vapor Deposition (1988) (0)
- Strained GaJn 1 -zP/(AIGa)o, 5P Heterostructures and Quantum-Well Laser Diodes (1994) (0)
- IVB-3 long-lived GaAlAs laser diodes with multiple quantum wells grown by organometallic vapor phase epitaxy (1983) (0)
- IVA-8 low-threshold AlGaAs laser diodes fabricated by silicon impurity-induced disordering (1985) (0)
- Time-resolved photoluminescence from GaAs/Al x -Ga 1-x As quantum wells grown by metal-organic chemical vapor deposition (1985) (0)
- United States Patent ( 19 ) Epler et al . 54 METHOD OF INSITU PHOTO INDUCED EVAPORATION ENHANCEMENT OF COMPOUND THEN FILMS DURING OR AFTER EPITAXIAL GROWTH (2017) (0)
- Laser apparatus comprising means for detecting the laser power (1991) (0)
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