Thomas Tiedje

Q: What Schools Are Affiliated With Thomas Tiedje

Thomas Tiedje is affiliated with the following schools: University of British Columbia, University of Victoria

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Thomas Tiedje

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#9282

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Physics

Thomas Tiedje's Degrees

PhD Physics Stanford University
Bachelors Physics University of British Columbia

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Thomas Tiedje's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon (1981) (846)
Limiting efficiency of silicon solar cells (1984) (763)
A physical interpretation of dispersive transport in disordered semiconductors (1981) (566)
Evidence for Exponential Band Tails in Amorphous Silicon Hydride (1981) (435)
Molecular beam epitaxy growth of GaAs1−xBix (2003) (403)
Band gap of GaAs1−xBix, 0 (2003) (371)
Amorphous semiconductor superlattices (1983) (363)
Giant spin-orbit bowing in GaAs1-xBix. (2006) (362)
Composition dependence of photoluminescence of GaAs1-xBix alloys (2009) (176)
Temperature dependence of the Urbach edge in GaAs (1995) (170)
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix (2008) (162)
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing (2012) (160)
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices (1995) (156)
Optical absorption edge of semi-insulating GaAs and InP at high temperatures (1997) (152)
DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON (1981) (149)
Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy (2012) (138)
OBSERVATION OF LEAKY SLAB MODES IN AN AIR-BRIDGED SEMICONDUCTOR WAVEGUIDE WITH A TWO-DIMENSIONAL PHOTONIC LATTICE (1997) (136)
Clustering effects in Ga(AsBi) (2010) (124)
Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy (2006) (114)
Surfactant enhanced growth of GaNAs and InGaNAs using bismuth (2003) (111)
Band tail recombination limit to the output voltage of amorphous silicon solar cells (1982) (106)
Nanoplasmonic terahertz photoconductive switch on GaAs. (2012) (103)
Recombination centers in phosphorous doped hydrogenated amorphous silicon (1982) (98)
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix (2008) (89)
Bismuth surfactant growth of the dilute nitride GaNxAs1−x (2005) (78)
Bi isoelectronic impurities in GaAs (2008) (78)
Growth and properties of the dilute bismide semiconductor GaAs1-xBix a complementary alloy to the dilute nitrides (2008) (75)
Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy (1993) (74)
Electron transport in hydrogenated amorphous silicon: drift mobility and junction capacitance (1980) (74)
Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs (1991) (73)
Evidence for lattice-mismatch-induced defects in amorphous semiconductor heterojunctions (1984) (65)
Photoelectron spectroscopy measurements of the band gap in porous silicon (1993) (65)
Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes (2012) (63)
Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x (2005) (62)
Growth and structure of layered amorphous semiconductors (1984) (62)
Charge transfer doping in amorphous semiconductor superlattices (1984) (58)
Exponential absorption edge in hydrogenated α-Si films (1980) (58)
Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films. (2001) (56)
Bandgap and resistivity of amorphous semiconductor superlattices (1984) (56)
GaAs1-xBixGaAs1-xBix light emitting diodes (2009) (55)
Urbach edge and the density of states in hydrogenated amorphous silicon (1983) (54)
Electron drift mobility in hydrogenated a‐Si (1980) (53)
Chapter 6 Information about Band-Tail States from Time-of-Flight Experiments (1984) (53)
Tip contamination effects in ambient pressure scanning tunneling microscopy imaging of graphite (1988) (51)
Evidence for quantum confinement in porous silicon from soft x‐ray absorption (1992) (51)
Ultraviolet photoemission studies of GaAs(100) surfaces chemically stabilized by H2S treatments (1989) (50)
Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8% (2014) (50)
Spatial correlation between Bi atoms in dilute GaAs 1-x Bi x : From random distribution to Bi pairing and clustering (2008) (49)
Internal photoemission in hydrogenated amorphous‐Si films (1980) (46)
Epitaxial Nd-doped α-(Al(1-x)Ga(x))2O3 films on sapphire for solid-state waveguide lasers. (2010) (46)
Nanoplasmonics enhanced terahertz sources. (2014) (46)
Giant Spin-Orbit Bowing in GaAs$_{1-x}$Bi$_{x}$ (2007) (45)
Compositional dependence of the exciton reduced mass in GaAs1-xBix (x=0-10%) (2010) (44)
Temperature dependence of hole mobility in GaAs1―XBiX alloys (2010) (43)
Surface morphology of GaAs during molecular beam epitaxy growth: Comparison of experimental data with simulations based on continuum growth equations (2002) (42)
Time-resolved charge transport in hydrogenated amorphous silicon (1984) (42)
X‐ray diffraction and x‐ray absorption studies of porous silicon, siloxene, heat‐treated siloxene, and layered polysilane (1994) (41)
Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy (2012) (41)
Deep level defects in n-type GaAsBi and GaAs grown at low temperatures (2013) (41)
Bi-induced p-type conductivity in nominally undoped Ga(AsBi) (2012) (41)
Plasmon-Enhanced below Bandgap Photoconductive Terahertz Generation and Detection. (2015) (40)
Effect of hydrogen on the density of gap states in reactively sputtered amorphous silicon (1981) (40)
Photoconductivity enhancement by light trapping in rough amorphous silicon (1983) (39)
RELATIONSHIP BETWEEN SURFACE MORPHOLOGY AND STRAIN RELAXATION DURING GROWTH OF INGAAS STRAINED LAYERS (1995) (39)
Carrier collection efficiency of a‐SiHx Schottky‐barrier solar cells (1981) (36)
UV photoemission study of sulfide passivated GaAs surfaces (1989) (35)
An rf bridge technique for contactless measurement of the carrier lifetime in silicon wafers (1983) (35)
Formation and vanishing of short range ordering in GaAs 1-x Bi x thin films (2010) (34)
Comment on the optical absorption edge in a-Si:H (1983) (34)
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells (2013) (34)
A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy (1991) (33)
Bismuth incorporation in GaAs1–xBix grown by molecular beam epitaxy with in‐situ light scattering (2007) (32)
Recent experimental results on a-Si:H/a-Ge:H superlattice structures (1985) (32)
Magnetoresistance of TTF-TCNQ (1975) (31)
Compositional evolution of bi-induced acceptor states in gaas(1-x)bi(x) alloy (2011) (31)
Sound velocity measurements on (TMTSF)2PF6 (1982) (30)
Temperature dependence of sound velocities in TTF-TCNQ (1977) (29)
Capacitance studies of the depletion region in hydrogenated a-Si Schottky barrier solar cells (1980) (29)
Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures (2013) (28)
Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs (2012) (28)
Electron-hole recombination in reactively sputtered amorphous silicon solar cells (1981) (26)
Ion beam characterization of GaAs1−x−yNxBiy epitaxial layers (2004) (25)
Luminescence dynamics in Ga(AsBi) (2011) (24)
Bi-induced vibrational modes in GaAsBi (2005) (23)
Comparison of strain relaxation in InGaAsN and InGaAs thin films (2002) (23)
Plasmonic Antireflection Coating for Photoconductive Terahertz Generation (2017) (22)
MBE growth optimization for GaAs1−xBix and dependence of photoluminescence on growth temperature (2015) (22)
Effect of substrate thickness, back surface texture, reflectivity, and thin film interference on optical band-gap thermometry (1997) (22)
Quantum confinement effects in the soft X-ray fluorescence spectra of porous silicon nanostructures (1996) (22)
Enhanced Terahertz Bandwidth and Power from GaAsBi‐based Sources (2013) (21)
Excitons Bound to Nitrogen Pairs in GaAs as Seen by Photoluminescence of High Spectral and Spatial Resolution (2007) (21)
How much room for BiGa heteroantisites in GaAs1−xBix? (2011) (21)
Limiting efficiency of indoor silicon photovoltaic devices. (2018) (20)
Diffuse optical reflectivity measurements on GaAs during molecular‐beam epitaxy processing (1992) (20)
Resonant inelastic soft X-ray scattering at the Si L3 edge: experiment and theory (1998) (19)
Radiation transport model for ablation hollows on snowfields (2006) (19)
Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy (2008) (19)
Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers (2000) (19)
Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure (2011) (19)
SURFACE MORPHOLOGY DYNAMICS IN STRAINED EPITAXIAL INGAAS (1997) (18)
Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation. (2017) (18)
A learning curve approach to projecting cost and performance in thin film photovoltaics (1996) (17)
Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples (2013) (17)
Deep level defects in GaAs1−xBix/GaAs heterostructures (2011) (16)
Evidence of two disorder scales in Ga(AsBi) (2011) (16)
Hydrogenated amorphous silicon solar cells (1982) (15)
Structure and photoluminescence of Nd:Y2O3 grown by molecular beam epitaxy (2008) (15)
Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN (2006) (15)
Semiconductor substrate cleaning and surface morphology in molecular beam epitaxy (1997) (15)
Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states (2013) (14)
Synthesis and field electron emission characteristics of diamond multilayer films grown by graphite etching (2007) (14)
Performance limits for the scanning tunneling microscope (1990) (14)
Faceting transition in epitaxial growth of dilute GaNAs films on GaAs (2001) (14)
Learning curve approach to projecting cost and performance for photovoltaic technologies (1997) (14)
Selective surface modifications with a scanning tunneling microscope (1997) (14)
Giant Spin-Orbit Bowing in GaAs (2006) (12)
Real-time monitoring of InAs/GaAs quantum dot growth using ultraviolet light scattering (1999) (12)
Interference between magnetism and surface roughness in coherent soft x-ray scattering (2002) (12)
Student Success in First-Year University Physics and Mathematics Courses: Does the high-school attended make a difference? (2013) (11)
Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers. (2009) (11)
A learning curve approach to projecting cost and performance for photovoltaic technologies (2008) (11)
The application of capacitive transducers to sound velocity measurements in TTF‐TCNQ (1979) (11)
Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy (2009) (11)
Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures (2016) (10)
Role of Coulomb repulsion in 4f orbitals in electrical excitation of rare‐earth impurities in semiconductors (1992) (10)
E+ Transition in GaAs1-xNx and GaAs1-xBix Due to Isoelectronic-Impurity-Induced Perturbation of the Conduction Band (2007) (10)
Strain relaxation by 〈100〉 misfit dislocations in dilute nitride InxGa1–xAs1–yNy/GaAs quantum wells (2005) (10)
Charge transfer enhancement of photoconductivity in hydrogenated amorphous Ge/Si multilayer films (1986) (10)
Temperature dependence of the photoconductive absorption edge in amorphous silicon (1983) (10)
Filled and empty states of disordered GaN studied by x-ray absorption and emission (2004) (10)
Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films (2016) (10)
Effect of the starting surface on the morphology of MBE-grown GaAs (2000) (10)
Kinetic roughening of GaAs(001) during thermal Cl 2 etching (2002) (9)
Molecular beam epitaxy growth of neodymium-doped yttrium aluminum perovskite (2009) (9)
Effects of hydrogen on the electronic properties of Ga(AsBi) alloys (2012) (9)
Molecular beam epitaxy growth and optical properties of Mg3N2 films (2018) (9)
Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy (2015) (9)
Meaning of the photovoltaic band gap for amorphous semiconductors (1982) (9)
Growth and fluctuations of suncups on alpine snowpacks (2010) (9)
Soft–X-ray fluorescence of porous silicon: electronic structure of Si nanostructures (1997) (9)
Effect of growth conditions on surface roughening of relaxed InGaAs on GaAs (1997) (8)
Temperature dependence of hole mobility in GaAs 1x Bi x alloys (2010) (8)
Complex dielectric function of GaAs1−xBix as a function of Bi content (2019) (8)
Raman and AFM studies on nominally undoped, p- and n-type GaAsBi alloys (2017) (8)
STM study of SiC crystallite growth on vicinal Si(111) surfaces (1992) (7)
Electron effective mass enhancement in Ga(AsBi) alloys probed by cyclotron resonance spectroscopy (2016) (7)
Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation (1997) (7)
Structural analysis of thin epitaxial Y2O3 films on sapphire (2010) (7)
Theory of electron–hole kinetics in amorphous semiconductors under illumination: Application to solar cells (1983) (7)
Chapter 12 Amorphous Semiconductor Superlattices (1984) (7)
Bandgap tunable Zn3-3Mg3N2 alloy for earth-abundant solar absorber (2019) (7)
Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss (1998) (6)
Factors affecting the temperature uniformity of semiconductor substrates in molecular‐beam epitaxy (1994) (6)
Photogenerated plasmons in GaAs1- xBix (2007) (6)
Predicting GaAs surface shapes during MBE regrowth on patterned substrates (2004) (6)
Ambient pressure scanning tunneling microscope imaging of hydrogen-passivated Si/Ge multilayers (1992) (6)
Emergence of macroscopic surface structure from atomistic dynamics in epitaxial film growth (2006) (6)
Cross‐sectional imaging of doped layers in epitaxial gallium arsenide films by scanning tunneling microscopy (1993) (6)
The applicability of implanted ?-sources to thickness and stoichiometry measurements of thin films (1997) (6)
In situ detection of misfit dislocations by light scattering (1997) (6)
Bragg reflection model for x-ray absorption near edge structure in crystalline solids (1993) (6)
Smoothing of textured GaAs surfaces during molecular beam epitaxy growth (2000) (5)
Photoemission study of the ZnSe/GaAs (100) interface: Composition and band offset (1991) (5)
Bismuth-containing III–V semiconductors (2013) (5)
Closed cycle chiller as a low cost alternative to liquid nitrogen in molecular beam epitaxy (2013) (5)
Closed-cycle cooling of cryopanels in molecular beam epitaxy (2014) (5)
Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)] (2015) (5)
Tight-binding model for the x-ray absorption and emission spectra of dilute GaN x As 1-x at the nitrogen K edge (2004) (5)
Optical wave propagation in epitaxial Nd:Y2O3 planar waveguides. (2010) (5)
In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss (1997) (4)
Comparison of the Band Gap of Porous Silicon as Measured by Photoelectron Spectroscopy and Photoluminescence (1994) (4)
X-Ray Diffuse Scattering from Misfit Dislocation at Buried Interface (2001) (4)
Temperature and Intensity Dependence of the Limiting Efficiency of Silicon Solar Cells (2021) (4)
In Situ Etch Rate Measurements by Alpha-Particle Energy Loss (1999) (4)
Surface modification and imaging of hydrogen passivated silicon with a combined scanning electron/scanning tunneling microscope (1997) (4)
Temperature dependence of the optical absorption edge in indium phosphide (1996) (4)
Theory of ultrasonic attenuation in one and two dimensional metals (1976) (4)
Interfacial band alignments for LaF3, NdF3, and TmF3 heterojunctions on Si(111) (1992) (4)
INDIUM-INDUCED SMOOTHING OF GAAS FILMS DURING MBE GROWTH (1996) (4)
Faceting at the step flow threshold in epitaxial growth on patterned surfaces (2009) (4)
SURFACE ROUGHNESS AND RESONANT SCATTERING EFFECTS IN SOFT X-RAY SPECKLE FROM RANDOM SEMICONDUCTOR INTERFACES (1999) (4)
Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-AlxGa1-xAs superlattices (1995) (4)
Light Scattering Measurements of Surface Roughness in Molecular Beam Epitaxy Growth of GaAs (1993) (3)
Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions (2013) (3)
Speckle with soft X-rays: A demonstration (1998) (3)
Multilevel infrared coupling of excitons in quantum-well semiconductors (2000) (3)
Soft X-ray emission of porous silicon nanostructures (1996) (3)
Electron Mobility in Dilute Nitride and Bismide Alloys of GaAs (2007) (3)
Characterization of GaAs/Ga1−xAlxAs multilayer systems by infrared spectroscopy at normal incidence (1993) (3)
Amorphous Semiconductor Multilayer Structures: Interface and Layer Thickness Effects in Photoluminescence (1985) (3)
Determining the profile of textured membranes by the alpha particle energy loss method (2002) (3)
Dual THz emissions of GaAsBi for THz photoconductive switching (2013) (3)
Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source (2007) (3)
Surface pattern transfer in GaAs with molecular beams of Cl2 (2004) (3)
Comment on "Transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth". (2004) (3)
Coherent soft x-ray scattering from InP islands on a semiconductor substrate (1999) (2)
ELECTRON MOMENTUM SPECTROSCOPY OF SURFACES (1999) (2)
Scanning tunneling microscopy study of carbon and hydrogen reactions with Si(111) in ultrahigh vacuum (1993) (2)
Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures (2013) (2)
Diffusion studies of Ra and Pb in GaAs by the alpha-particle energy loss method (1998) (2)
Carrier–phonon coupling in GaAs1−xBix/GaAs quantum wells (2012) (2)
In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss (1999) (2)
Surface pattern evolution during thermal Cl2 etching of GaAs(001) (2003) (2)
Multiple Trapping Models for Dispersive Admittance of Amorphous MIS Structures (1985) (1)
Analytical microscopy of titanium nitride (1991) (1)
Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films. (2019) (1)
Nonlinear Growth in GaAs Molecular Beam Epitaxy (2005) (1)
Bismuth surfactant growth of thedilutenitrideGaN x As 1 x (2005) (1)
Temperature Dependence of the Limiting Efficiency of Bifacial Silicon Solar Cells (2020) (1)
Experimental evidence for a kinetic model of hydrogen incorporation into sputtered a‐Si films (2008) (1)
Optical Characterization of GaAsBi (2004) (1)
Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides: Model and experimental results (1996) (1)
A physical interpretation of dispersive transport in amorphous silicon hydride (2008) (1)
Optical spectroscopy of Bi containing semiconductors (2010) (1)
Optoelectronic Properities of A-Ge:H/A-Si:H Superlattic Structures (1986) (1)
Enhancement of Photocarrier Lifetime Due to Charge Separation in a-Si:H/a-Ge:H Superlattices (1986) (1)
Carbon filament source for p‐type doping in molecular beam epitaxy (1994) (1)
Luminescent coupling and efficiency of bifacial GaAs/Si tandem solar cells (2022) (1)
Summary Abstract: Structure of interfaces in compositionally modulated amorphous semiconductor superlattices (1986) (1)
Surfactant enhanced growth of GaNAs and InGaNAs using a Bi flux (2002) (1)
Surface Morphology Evolution During GaAs Homoepitaxy (2001) (1)
Cl2-Etching and MBE-Regrowth for GaAs/AlOx Photonic Crystals (2001) (1)
Linear smoothing of GaAs(1 0 0) during epitaxial growth on rough substrates (2008) (1)
Epitaxial Nd:Sapphire films – candidate solid state laser material for 1096 nm emission (2009) (0)
How Scientific Research at ExxonMobil in the 1980's showed the way for solar electricity 35 years later (2019) (0)
Dilute GaAs-Nitride Alloys Grown with Bismuth by MBE (2005) (0)
MBE-grown Nd:Y$_x$Al$_y$O solid state laser crystals: Compositional control leading to films of the primary phases YAG, YAP and YAM (2010) (0)
Electroabsorption measurements of interface charges in a‐Si: H/a‐SiNx: H superlattices (2008) (0)
Surface Reconstructions and Bi Incorporation in GaAs1-xBix Alloys (2010) (0)
Carrier lifetime measurements in silicon wafers (1983) (0)
Electronic properties of dilute Bismide alloys (2008) (0)
Formation of Suncups on Snowfields Exposed to Solar Radiation (2005) (0)
Photoluminescence in amorphous silicon/amorphous silicon nitride double heterostructures (2008) (0)
Effect of Preparation Conditions on the Silicon L-Edge In Electrochemically Prepared Porous Silicon (1993) (0)
Enhanced nitrogen incorporation in GaNAs films grown with a bismuth surfactant (2004) (0)
Sputtered-amorphous-silicon solar cells. Final technical report, July 22, 1980-July 22, 1981 (1981) (0)
Radiation Transport Model for the Formation of Ablation Hollow in Snow (2001) (0)
Microporous Amorphous Superlattices (1986) (0)
Enhanced optical absorption produced by light trapping in amorphous silicon films (1982) (0)
Origin of the suppression in low frequency terahertz conductivity in dilute GaAs nitride and bismide alloys (2009) (0)
Growth of InP Islands on LaF 3/InP(111)B Heterostructures by Molecular Beam Epitaxy (1999) (0)
Scanning tunneling microscopy and low energy electron diffraction study of the formation of a ∛×∛R30° reconstruction on the hydrogen etched Si(111) 1×1 surface (1997) (0)
Molecular Beam Epitaxy Growth of Nd:Y2O3 for Planar Waveguide Lasers (2007) (0)
Structure and properties of CaF2/GaAs (100) heterojunctions (1990) (0)
Step Density Minimum on Vicinal Surfaces and Surface Cusps in Epitaxial Regrowth on Patterned Substrates (2007) (0)
Concentration dependence of the E + transition in dilute GaAs1-xNx alloy. (2007) (0)
Strain relaxation by ·100Ò misfit dislocations in dilute nitride InxGa1–xAs1–yNy/GaAs quantum wells (2005) (0)
STRUCTURE OF AMORPHOUS SOLID INTERFACES USING COMPOSITIONALLY MODULATED SUPERLATTICES (1985) (0)
A Continuum Model For the Morphology of Regrown GaAs Gratings Derived from Atomic Scale Processes (2004) (0)
COMPOSITIONALLY MODULATED AMORPHOUS SEMICONDUCTOR SUPERLATTICES (1986) (0)
Photoluminescence of GaAsBi alloys with emission wavelength up to 1.5 $\mu$m (2009) (0)
Collection efficiency of photogenerated carriers in silicon hydride a‐SiHx MIS solar cell structures (2008) (0)
A Coupled Equations Model for Epitaxial Growth on Textured Surfaces (2004) (0)
Light Scattering and Electron Microscopy Study of the Surface Morphology of GaAs Films Grown by Molecular Beam Epitaxy (2021) (0)
Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures (2023) (0)
Surface morphology of GaNAs thin films grown by MBE (2001) (0)
Prediction of Macroscopic Surface Shapes from Adatom Rate Equations in Epitaxial Growth (2005) (0)
Evolution of textured GaAs surfaces during Cl2 etching and MBE growth (2004) (0)
GROWTH AND STRUCTURE OF COMPOSITIONALLY MODULATED AMORPHOUS SUPERLATTICES (1985) (0)
High spectral and spatial resolution photoluminescence experiments on excitons bound to nitrogen pairs in GaAs (2007) (0)
Structural Characterization of $Y_{2}O_{3}$ Films Grown on Sapphire by MBE (2010) (0)
TEMPERATURE DEPENDENCE OF THE ELECTRON DRIFT MOBILITY IN HYDROGENATED a-Si PREPARED BY SPUTTERING (1981) (0)
Defect Energy Levels in GaAsBi and GaAs Grown at Low Temperatures (2014) (0)
Reactive evaporation of BaF2 in water vapour for in situ growth of YBa2Cu3Ox thin films (1991) (0)
Fifteenth International Conference on molecular beam epitaxy: Vancouver, BC, Canada, August 7–14, 2008 (2009) (0)
Bismuth related changes in the electronic properties of high quality dilute GaAs$_{1-x}$Bi$_{x}$. (2008) (0)
Current Matching in Bifacial GaAs/Si Tandem Cells (2021) (0)
Deep Level Defects in Epitaxial GaAsBi/GaAs (2010) (0)
Contribution of a single strained layer InGaAs quantum well to the anisotropic group velocity dispersion of GRINSCH waveguides: Experiment and model results (1996) (0)
Light Scattering Study of the Evolution of the Surface Morphology During Growth of Ingaas on GaAs (1995) (0)
Ion beam characterization of GaAs1-xNx and GaAs1-x-yNxBiy epitaxial layers (2004) (0)
De-excitation spectroscopy of L2,3 core excitons in CaF2 thin films (1990) (0)
A Novel Method for Fabrication of Free Standing Subwavelength Gratings in Gaas/Algaas (2006) (0)
Interface States in Amorphous Silicon/Amorhous Silicon Nitride Superlattice Structures (1984) (0)
Continuum Model for Chaotic Pattern Dynamics on Au Surfaces Sputtered by Focused Ion Beam (2007) (0)

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What Schools Are Affiliated With Thomas Tiedje?

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