Tibor Grasser

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Why Is Tibor Grasser Influential?

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According to Wikipedia, Tibor Grasser is an electrical engineer and full professor at the Vienna University of Technology in Vienna, Austria. Since 2016 he heads the Institute for Microelectronics at that University. Grasser's research interests are focused on numerical simulation of solid-state devices and integrated circuits. For contributions to the modeling of the reliability of semiconductor devices, he was named a Fellow of the Institute of Electrical and Electronics Engineers in 2016.

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Tibor Grasser's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012) (395)
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011) (390)
Origin of NBTI variability in deeply scaled pFETs (2010) (297)
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability (2010) (271)
A review of hydrodynamic and energy-transport models for semiconductor device simulation (2003) (252)
Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008) (226)
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010) (207)
A two-stage model for negative bias temperature instability (2009) (204)
Analytic modeling of the bias temperature instability using capture/emission time maps (2011) (158)
The Universality of NBTI Relaxation and its Implications for Modeling and Characterization (2007) (155)
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors (2016) (141)
Insulators for 2D nanoelectronics: the gap to bridge (2020) (138)
Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors. (2016) (135)
Atomistic approach to variability of bias-temperature instability in circuit simulations (2011) (135)
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors (2010) (126)
Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability (2007) (124)
Transistors based on two-dimensional materials for future integrated circuits (2021) (120)
Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices—Application to NBTI (2010) (120)
Bias Temperature Instability for Devices and Circuits (2014) (118)
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise (2009) (111)
Recent advances in understanding the bias temperature instability (2010) (109)
Comphy - A compact-physics framework for unified modeling of BTI (2018) (103)
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors (2019) (98)
NBTI from the perspective of defect states with widely distributed time scales (2009) (95)
Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs (2009) (95)
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation (2011) (93)
Understanding and modeling AC BTI (2011) (90)
On the microscopic structure of hole traps in pMOSFETs (2014) (86)
A unified perspective of RTN and BTI (2014) (85)
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials (2021) (84)
Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs (2012) (81)
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence (2018) (77)
The ‘permanent’ component of NBTI: Composition and annealing (2011) (77)
SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI (2013) (76)
ViennaCL - Linear Algebra Library for Multi- and Many-Core Architectures (2016) (73)
Hot Carrier Degradation in Semiconductor Devices (2015) (70)
Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide. (2015) (70)
Response of a single trap to AC negative Bias Temperature stress (2011) (69)
Predictive Hot-Carrier Modeling of n-Channel MOSFETs (2014) (69)
Mixed-mode device simulation (2000) (66)
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019) (65)
Failure of moments-based transport models in nanoscale devices near equilibrium (2005) (64)
Understanding negative bias temperature instability in the context of hole trapping (Invited Paper) (2009) (59)
Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM (2013) (58)
An energy-level perspective of bias temperature instability (2008) (58)
Controversial issues in negative bias temperature instability (2018) (57)
Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks (2013) (56)
Using six moments of Boltzmann’s transport equation for device simulation (2001) (55)
Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation (2018) (55)
Unambiguous identification of the NBTI recovery mechanism using ultra-fast temperature changes (2009) (53)
Degradation of time dependent variability due to interface state generation (2013) (52)
Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models (2008) (51)
Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs (2016) (51)
Interface traps density-of-states as a vital component for hot-carrier degradation modeling (2010) (51)
On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale (2013) (50)
On the frequency dependence of the bias temperature instability (2012) (50)
Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation (2017) (50)
Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation (2013) (49)
Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics (2011) (48)
NBTI in Nanoscale MOSFETs—The Ultimate Modeling Benchmark (2014) (48)
Highly-stable black phosphorus field-effect transistors with low density of oxide traps (2017) (47)
Theoretical models of hydrogen-induced defects in amorphous silicon dioxide (2015) (47)
A multi-purpose Schrödinger-Poisson Solver for TCAD applications (2007) (45)
Electron Mobility Model for $\langle \hbox{110} \rangle$ Stressed Silicon Including Strain-Dependent Mass (2007) (44)
On the temperature dependence of NBTI recovery (2008) (44)
Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices (2016) (44)
Characterization of the hot electron distribution function using six moments (2002) (43)
On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs (2016) (43)
Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy (2013) (43)
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability (2007) (41)
Observations of negative bias temperature instability defect generation via on the fly electron spin resonance (2010) (41)
The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes (2012) (41)
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes (2015) (39)
Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs (2012) (39)
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors. (2018) (39)
Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (2019) (39)
Physical modeling of hot-carrier degradation for short- and long-channel MOSFETs (2014) (39)
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI (2013) (38)
Energetic mapping of oxide traps in MoS2 field-effect transistors (2017) (38)
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs (2014) (38)
Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias (2011) (37)
A numerical study of partial-SOI LDMOSFETs (2003) (37)
Modeling of hot-carrier degradation: Physics and controversial issues (2012) (36)
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability (2018) (36)
In Situ Poly Heater—A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip (2010) (35)
Understanding temperature acceleration for NBTI (2011) (35)
Improvements of NBTI reliability in SiGe p-FETs (2010) (35)
Bias-temperature instability in single-layer graphene field-effect transistors: A reliability challenge (2014) (34)
Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress (2011) (33)
Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function (2002) (33)
Origins and implications of increased channel hot carrier variability in nFinFETs (2015) (33)
On the volatility of oxide defects: Activation, deactivation, and transformation (2015) (33)
Complete extraction of defect bands responsible for instabilities in n and pFinFETs (2016) (32)
Advanced Transport Models for Sub-Micrometer Devices (2004) (32)
A Physical Model for the Hysteresis in MoS2 Transistors (2018) (31)
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs (2018) (31)
Negative bias temperature instability: Recoverable versus permanent degradation (2007) (31)
Miniaturized TEG with thermal generation of free carriers (2007) (31)
Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation (2015) (30)
The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing (2016) (30)
Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation (2012) (29)
Revision of the standard hydrodynamic transport model for SOI simulation (2002) (29)
Thermoelectric power generation using large-area Si/SiGe pn-junctions with varying Ge content (2006) (29)
On the feasibility of spherical harmonics expansions of the Boltzmann transport equation for three-dimensional device geometries (2011) (29)
A study of NBTI by the statistical analysis of the properties of individual defects in pMOSFETS (2009) (29)
The Capture/Emission Time Map Approach to the Bias Temperature Instability (2014) (29)
Recovery-free electron spin resonance observations of NBTI degradation (2010) (29)
Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007 (2007) (28)
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET (2011) (28)
Multiphonon hole trapping from first principles (2011) (27)
Physics-Based Hot-Carrier Degradation Modeling (2011) (27)
On the microscopic origin of the frequency dependence of hole trapping in pMOSFETs (2012) (27)
Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique (2009) (27)
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology (2017) (26)
Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique (2018) (26)
Dielectric Properties of Ultrathin CaF2 Ionic Crystals (2020) (26)
A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs (2014) (25)
Microstructure and Stress Aspects of Electromigration Modeling (2006) (25)
A rigorous study of measurement techniques for negative bias temperature instability (2007) (25)
NBTI modeling in analog circuits and its application to long-term aging simulations (2014) (24)
Efficient physical defect model applied to PBTI in high-κ stacks (2017) (24)
Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias (2013) (24)
Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer (2009) (24)
SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices—Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues (2013) (23)
Charging and Discharging of Oxide Defects in Reliability Issues (2007) (23)
Hot-carrier degradation modeling using full-band Monte-Carlo simulations (2010) (23)
TCAD Modeling of Negative Bias Temperature Instability (2006) (23)
Extraction of the Random Component of Time-Dependent Variability Using Matched Pairs (2015) (22)
Recent Trends in Bias Temperature Instability (2011) (22)
On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs (2011) (22)
Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs (2015) (22)
Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data (2005) (21)
Maximizing reliable performance of advanced CMOS circuits—A case study (2014) (21)
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT (2010) (21)
Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress (2011) (21)
Influence of the distribution function shape and the band structure on impact ionization modeling (2001) (21)
Fully coupled electrothermal mixed-mode device simulation of SiGe HBT circuits (2001) (21)
Hot-carrier degradation caused interface state profile—Simulation versus experiment (2011) (21)
Hydrodynamic Mixed-Mode Simulation (1998) (21)
Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide (2017) (21)
Physical modeling of NBTI: From individual defects to devices (2014) (21)
Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation (2017) (21)
A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI (2009) (20)
Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress (2016) (20)
Defect-centric perspective of time-dependent BTI variability (2012) (20)
Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences (2015) (20)
Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators (2019) (19)
Physics-Based Hot-Carrier Degradation Models (2011) (19)
Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental (2017) (19)
Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units (2014) (19)
Observing two stage recovery of gate oxide damage created under negative bias temperature stress (2010) (19)
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part I: Experimental (2019) (19)
Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress (2010) (18)
A single-trap study of PBTI in SiON nMOS transistors: Similarities and differences to the NBTI/pMOS case (2014) (18)
A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides (2009) (18)
Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress (2012) (18)
Impact of the carrier distribution function on hot-carrier degradation modeling (2011) (18)
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation (2016) (18)
Simulation of Semiconductor Processes and Devices 2007 (2007) (18)
Impact of Individual Charged Gate-Oxide Defects on the Entire $I_{D}$–$V_{G}$ Characteristic of Nanoscaled FETs (2012) (17)
The defect-centric perspective of device and circuit reliability — From individual defects to circuits (2015) (17)
Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks (2008) (17)
NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack (2013) (17)
Investigation of Spurious Velocity Overshoot Using Monte Carlo Data (2001) (17)
The effect of recovery on NBTI characterization of thick non-nitrided oxides (2008) (17)
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures (2020) (17)
Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices (2005) (17)
Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs (2019) (16)
Accurate impact ionization model which accounts for hot and cold carrier populations (2002) (16)
Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTI (2014) (16)
Advanced Modeling of Oxide Defects (2014) (15)
Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices (2014) (15)
Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets (2016) (15)
Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact model (2016) (15)
Effect of electric field on migration of defects in oxides: Vacancies and interstitials in bulk MgO (2018) (15)
NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling (2019) (15)
Non-parabolic macroscopic transport models for semiconductor device simulation (2005) (14)
BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration (2018) (14)
Gate current random telegraph noise and single defect conduction (2013) (14)
Analytical solution of the switching trap model for negative bias temperature stress (2009) (14)
Dependence of the negative bias temperature instability on the gate oxide thickness (2010) (14)
Energetic distribution of oxide traps created under negative bias temperature stress and their relation to hydrogen (2010) (14)
Applicability of Charge Pumping on Germanium MOSFETs (2008) (14)
Accurate High Temperature Measurements Using Local Polysilicon Heater Structures (2014) (14)
The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits (2016) (14)
An advanced description of oxide traps in MOS transistors and its relation to DFT (2010) (14)
Performance Aspects of a DSEL for Scientific Computing with C + + (2006) (13)
Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors (2010) (13)
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part II: Theory (2019) (13)
The impact of recovery on BTI reliability assessments (2010) (13)
Advanced Device Modeling and Simulation (2003) (13)
Toward a streamlined projection of small device bias temperature instability lifetime distributions (2013) (13)
On the recoverable and permanent components of Hot Carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs (2011) (13)
Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs (2001) (13)
A Model for Switching Traps in Amorphous Oxides (2009) (12)
Hole trapping at hydrogenic defects in amorphous silicon dioxide (2015) (12)
Understanding correlated drain and gate current fluctuations (2013) (12)
Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD (2005) (12)
A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures (2012) (12)
Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies (2021) (12)
Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs (2012) (12)
Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces (2019) (12)
The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices (2016) (12)
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress (2017) (12)
Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination (2004) (11)
Recovery of negative and positive bias temperature stress in pMOSFETs (2010) (11)
Toward Automated Defect Extraction From Bias Temperature Instability Measurements (2021) (11)
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs (2011) (11)
HOT CARRIER EFFECTS WITHIN MACROSCOPIC TRANSPORT MODELS (2003) (11)
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures (2013) (11)
Superior NBTI in High-k SiGe Transistors–Part II: Theory (2017) (11)
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures (2004) (11)
Advanced data analysis algorithms for the time-dependent defect spectroscopy of NBTI (2012) (11)
New SOI lateral power devices with trench oxide (2004) (10)
On the microscopic limit of the modified reaction-diffusion model for the negative bias temperature instability (2011) (10)
Simulation of Reliability on Nanoscale Devices (2012) (10)
Similarities and Differences of BTI in SiC and Si Power MOSFETs (2020) (10)
Device Simulator Calibration for Quartermicron CMOS Devices (1998) (10)
Adaptive variable-order spherical harmonics expansion of the Boltzmann Transport Equation (2011) (10)
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited) (2017) (10)
Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps (2013) (10)
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors (2014) (10)
New insights on the PBTI phenomena in SiON pMOSFETs (2012) (10)
Electron Mobility Model for 〈 110 〉 Stressed Si Including Strain-Dependent Mass (2006) (9)
Rigorous modeling approach to numerical simulation of SiGe HBTs (2004) (9)
A detailed evaluation of model defects as candidates for the bias temperature instability (2013) (9)
Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation (2018) (9)
Technology CAD: Device simulation and characterization (2002) (9)
On the ‘permanent’ component of NBTI (2010) (9)
A comparison of quantum correction models for the three-dimensional simulation of FinFET structures (2004) (9)
Transformation: nanotechnology—challenges in transistor design and future technologies (2017) (9)
Performance portability study of linear algebra kernels in OpenCL (2014) (9)
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors (2018) (9)
Quantum correction for DG MOSFETs (2007) (9)
Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs (2017) (9)
Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices (2017) (9)
Small-signal analysis and direct S-parameter extraction (2002) (9)
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits (2014) (9)
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? (2022) (9)
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities (2020) (8)
‘Atomistic’ simulation of RTS amplitudes due to single and multiple charged defect states and their interactions (2010) (8)
Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks (2009) (8)
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic (2012) (8)
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs (2019) (8)
Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices (2005) (8)
Inclusion of carrier-carrier-scattering into arbitrary-order spherical harmonics expansions of the Boltzmann transport equation (2012) (8)
Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors (2020) (8)
Separation of electron and hole trapping components of PBTI in SiON nMOS transistors (2020) (8)
The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects (2017) (8)
Toward a streamlined projection of small Device BTI lifetime distributions (2012) (8)
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices (2020) (8)
Toward Engineering Modeling of Negative Bias Temperature Instability (2008) (8)
Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs (2017) (8)
On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects (2016) (8)
On the importance of electron–electron scattering for hot-carrier degradation (2014) (8)
On the thermal activation of negative bias temperature instability (2009) (8)
On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements (2015) (8)
NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability (2019) (8)
Benchmarking time-dependent variability of junctionless nanowire FETs (2017) (8)
Modeling of negative bias temperature instability (2007) (7)
Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs (2011) (7)
On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices (2021) (7)
Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques (2019) (7)
On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI (2019) (7)
Simulation of gallium-arsenide based high electron mobility transistors (2000) (7)
Multi scale modeling of multi phonon hole capture in the context of NBTI (2011) (7)
Circuit simulation of workload-dependent RTN and BTI based on trap kinetics (2014) (7)
Consistent comparison of drift-diffusion and hydro-dynamic device simulations (1999) (7)
Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI variability (2013) (7)
Numerical study of partial-SOI LDMOSFET power devices (2001) (7)
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures (2007) (7)
Advanced modeling of oxide defects for random telegraph noise (2011) (7)
Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning (2021) (7)
Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices (2006) (7)
Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability (2007) (7)
Continuous Property Gradation for Multi-material 3D-printed Objects (2018) (7)
A Compact Physics Analytical Model for Hot-Carrier Degradation (2020) (7)
A Methodology for Deep Sub-0 . 25 m CMOS Technology Prediction (2001) (7)
Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs (2014) (7)
Experimental evidences and simulations of trap generation along a percolation path (2015) (7)
Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs (2017) (6)
Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs (2011) (6)
Atomistic Modeling of Oxide Defects (2020) (6)
Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning (2018) (6)
Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs (2016) (6)
CONCEPTS FOR HIGH PERFORMANCE GENERIC SCIENTIFIC COMPUTING (2006) (6)
An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps (2019) (6)
Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs (2009) (6)
On the temperature and voltage dependence of short-term negative bias temperature stress (2009) (6)
Physical modeling of hot-carrier degradation in nLDMOS transistors (2014) (6)
Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors (2016) (6)
A methodology for deep sub-0.25 /spl mu/m CMOS technology prediction (2001) (6)
Power Output Improvement of Silicon-Germanium Thermoelectric Generators (2006) (6)
BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs (2014) (6)
Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation (2012) (6)
Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications (2006) (6)
Detrimental impact of hydrogen passivation on NBTI and HC degradation (2013) (6)
Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs (2019) (6)
Crystalline insulators for scalable 2D nanoelectronics (2021) (5)
A Physically-Based Electron Mobility Model for Silicon Device Simulation (1998) (5)
Native high-k oxides for 2D transistors (2020) (5)
Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model (2002) (5)
pMOSFET with Optimized Reliability ( VDD = 1 V ) : Meeting the NBTI Lifetime Target at Ultra-Thin EOT (2010) (5)
Limitations of hydrodynamic and energy-transport models (2002) (5)
Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator (2005) (5)
Direct tunneling and gate current fluctuations (2013) (5)
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release (2020) (5)
Applicability of Macroscopic Transport Models to Decananometer MOSFETs (2012) (5)
Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach (2017) (5)
Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique (2016) (5)
Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric (2014) (5)
Adaptive Energy Integration of Non-Equilibrium Green's Functions (2007) (5)
Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach (2019) (5)
Advanced modeling of charge trapping at oxide defects (2013) (5)
Critical Modeling Issues in Negative Bias Temperature Instability (2009) (5)
High-Field Electron Mobility Model for Strained-Silicon Devices (2006) (5)
Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability (2006) (5)
Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part II: The Role of Polarons (2022) (5)
Numerical Analysis of SiC Merged PiN Schottky Diodes (2005) (5)
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS (2021) (5)
An analytical approach for physical modeling of hot-carrier induced degradation (2011) (5)
CONTROLLING TCAD APPLICATIONS WITH A DYNAMIC DATABASE (2000) (5)
The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters (2020) (4)
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs (2019) (4)
A Performance Comparison of Algebraic Multigrid Preconditioners on CPUs, GPUs, and Xeon Phis (2015) (4)
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI (2018) (4)
First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation (2019) (4)
A new physics-based NBTI model for DC-and AC-stress enabling accurate circuit aging simulations considering recovery (2010) (4)
Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors (2017) (4)
A novel technique for coupling three dimensional mesh adaptation with an a posteriori error estimator (2005) (4)
Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations (2010) (4)
Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approach (2015) (4)
Characterization of charge trapping phenomena at III-N/dielectric interfaces (2016) (4)
Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric (2019) (4)
On the Microscopic Limit of the RD Model (2014) (4)
TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures (2015) (4)
Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits (2012) (4)
Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio (2018) (4)
A SIMULATION STUDY OF PARTIALLY DEPLETED SOI MOSFETS (2001) (4)
Evidence for Pb center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study (2012) (4)
Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTs (2015) (4)
Reliability of next-generation field-effect transistors with transition metal dichalcogenides (2018) (4)
Possible Correlation between Flicker Noise and Bias Temperature Stress (2009) (4)
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications (2012) (4)
Improving strained-Si on Si/sub 1-x/Ge/sub x/ deep submicron MOSFETs performance by means of a stepped doping profile (2001) (4)
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning (2022) (4)
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures (2018) (4)
Silicon carbide accumulation-mode laterally diffused MOSFET (2003) (4)
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices (2019) (4)
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics (2019) (4)
Advanced Equation Processing for TCAD (4)
On the impact of mechanical stress on gate oxide trapping (2020) (4)
An Impact Ionization Model Including Non-Maxwellian And Non-Parabolicity Effects (2001) (4)
Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications] (2003) (4)
Editorial for the Special Issue on Miniaturized Transistors (2019) (4)
Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs (2015) (4)
A 2D non-parabolic six-moments model (2008) (4)
Comprehensive analysis of vacancy dynamics due to electromigration (2005) (4)
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking (2020) (4)
A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices (2004) (4)
Electro-thermal effects in mixed-mode device simulation (2000) (4)
INVESTIGATION OF THERMO-MECHANICAL STRESS IN MODERN INTERCONNECT LAYOUTS (2005) (4)
Mobility Parameter Tuning for Device Simulation (1998) (3)
Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium (2005) (3)
An analytical model for MOSFET local oxide capacitance (2011) (3)
Inverse modeling of oxid deposition using measurements of a TEOS CVD process (2005) (3)
Design optimization of multi-barrier tunneling devices using the transfer-matrix method (2001) (3)
Determination of correlation length for thickness fluctuations in thin oxide and fluoride films (2009) (3)
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper (2021) (3)
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations (2006) (3)
The Evolution of the Resistance and Current Density During Electromigration (2004) (3)
MODELING OF HOT-CARRIER DEGRADATION BASED ON THOROUGH CARRIER TRANSPORT TREATMENT (2014) (3)
Green ’ s function asymptotic in two-layered periodic medium (2009) (3)
Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes (2019) (3)
Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials (2022) (3)
An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs (2002) (3)
Analytical Modeling of Electron Mobility in Strained Germanium (2006) (3)
Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines (2005) (3)
A GENERALLY APPLICABLE APPROACH FOR ADVANCED EQUATION ASSEMBLING (3)
Optimization of electrothermal material parameters using inverse modeling [polysilicon fuse interconnects] (2003) (3)
(Invited) Charge Trapping and the Negative Bias Temperature Instability (2010) (3)
Interface states charges as a vital component for hc degradation modeling. (2010) (3)
A density-functional study of defect volatility in amorphous silicon dioxide (2015) (3)
Impact of Gate Dielectrics on the Threshold Voltage in MoS 2 Transistors (2017) (3)
Parameter modeling for higher-order transport models in UTB SOI MOSFETs (2008) (3)
Border Trap Based Modeling of SiC Transistor Transfer Characteristics (2018) (3)
Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental (2021) (3)
Epitaxial Volmer-Weber growth modelling (2013) (3)
Modeling of Tunneling Currents for Highly Degraded CMOS Devices (2005) (3)
Three-dimensional topography simulation for deposition and etching processes using a level set method (2004) (3)
A Note on the GPU Acceleration of Eigenvalue Computations (2013) (3)
Finding Suitable Gate Insulators for Reliable 2D FETs (2022) (3)
Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability—Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic (2021) (3)
Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacks (2021) (3)
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs (2018) (3)
Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population (2001) (3)
Modeling of Macroscopic Transport Parameters in Inversion Layers (2007) (3)
Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory (2022) (3)
Direct extraction feature for scattering parameters of SiGe-HBTs (2004) (3)
Analysis of the Features of Hot-Carrier Degradation in FinFETs (2018) (3)
An ab initio study on resistance switching in hexagonal boron nitride (2022) (3)
A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs (2014) (3)
On the correlation between NBTI, SILC, and flicker noise (2012) (3)
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling (2019) (2)
Characterization and modeling of charge trapping: From single defects to devices (2014) (2)
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs (2022) (2)
Superior reliability of high mobility (Si)Ge channel pMOSFETs (2013) (2)
An Impact Ionization Model Including an Explicit Cold Carrier Population (2002) (2)
Recent developments in understanding the bias temperature instability (2012) (2)
Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices (2015) (2)
A SIMULATOR MODULE FOR ADVANCED EQUATION ASSEMBLING (2003) (2)
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors (2021) (2)
A 2D-non-parabolic six moments model (2007) (2)
On the effect of interface traps on the carrier distribution function during hot-carrier degradation (2016) (2)
Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping (2020) (2)
Thermoelectric Power Generation Using Large Area pn-Junctions (2005) (2)
Improving SiC lateral DMOSFET reliability under high field stress (2003) (2)
On the microscopic limit of the reaction-diffusion model for the negative bias temperature instability (2011) (2)
CONTROLLING TCAD APPLICATIONS WITH AN OBJECT-ORIENTED DYNAMIC DATABASE (2001) (2)
On the temperature behavior of hot-carrier degradation (2015) (2)
Transformation: nanotechnology—challenges in transistor design and future technologies (2017) (2)
Oxide traps in MOS transistors: Semi-automatic extraction of trap parameters from time dependent defect spectroscopy (2010) (2)
On the highest order moment closure problem [semiconductor device modelling applications] (2004) (2)
Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress (2006) (2)
Assessing reliability of nano-scaled CMOS technologies one defect at a time (2012) (2)
A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors (2011) (2)
Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs (2019) (2)
Recent results concerning the influence of hydrogen on the bias temperature instability (2012) (2)
Impact of gate oxide thickness variations on hot-carrier degradation (2012) (2)
Level shifts and gate interfaces as vital ingredients in modeling of charge trapping (2008) (2)
Transient model for terminal current noise (2002) (2)
Boundary Condition Models for Terminal Current Fluctuations (2001) (2)
Parallel preconditioning for spherical harmonics expansions of the Boltzmann transport equation (2011) (2)
An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs (2014) (2)
Editorial: Extended papers selected from ESSDERC 2015 (2016) (2)
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide (2021) (2)
Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems (2007) (2)
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants (2019) (2)
Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies (2021) (2)
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate (2009) (2)
Energy transport gate current model accounting for non-Maxwellian energy distribution (2003) (2)
A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion scheme (2015) (2)
Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays (2020) (2)
A Global Self-Heating Model for Device Simulation (2000) (2)
On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models (2004) (2)
Level Set Method Based General Topography Simulator and its Applications in Interconnect Processes (2005) (2)
Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function (2003) (2)
Statistical Characterization of BTI and RTN using Integrated pMOS Arrays (2019) (2)
Critical thickness for GaN thin film on AlN substrate (2013) (2)
14 Engineering Modeling of Negative Bias (2008) (2)
First-Principles Investigation on Oxide Trapping (2007) (2)
Improving Strained-Si on Si 1 x Ge x Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile (2001) (2)
Physical modeling of the hysteresis in M0S2 transistors (2017) (2)
EXTRACTION OF MATERIAL PARAMETERS BASED ON INVERSE MODELING OF THREE-DIMENSIONAL INTERCONNECT STRUCTURES (2003) (2)
Thermal simulations of III/V HEMTs (1999) (2)
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures (2020) (2)
A Physically Based Quantum Correction Model for DG MOSFETs (2006) (2)
Efficient Modeling of Charge Trapping at Cryogenic Temperatures--Part I: Theory (2021) (2)
Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors (2014) (2)
A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation (2001) (2)
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network (2021) (2)
(Late) Essential ingredients for modeling of hot-carrier degradation in ultra-scaled MOSFETs (2013) (2)
Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration (2018) (2)
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM (2022) (2)
Simulation of Microelectronic Structures using A Posteriori Error Estimation and Mesh Optimization (2006) (1)
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices (2021) (1)
CALIBRATION OF A MOBILITY MODEL FOR QUARTERMICRON CMOS DEVICES (2014) (1)
The effect of recovery on NBTI characterization of thick non-nitrided oxides (2008) (1)
A rigorous model for trapping and detrapping in thin gate dielectrics (2008) (1)
Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET Fabrication (2005) (1)
Recent advances in transport modeling for miniaturized CMOS devices (2002) (1)
Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices (2022) (1)
Hydrodynamic and energy-transport models for semiconductor device simulation: review of basic models (2002) (1)
Epitaxial Growth of Crystalline CaF2 on Silicene (2021) (1)
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics (2020) (1)
The Control System of the Device Simulator MINIMOS-NT (2002) (1)
Investigation of NBTI Recovery During Measurement (2006) (1)
Long-Term Stability and Reliability of Black Phosphorus Field-E ff ect Transistors (2016) (1)
On the Highest Order Moment Closure Problem (2004) (1)
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays (2022) (1)
Improved PBTI reliability in junction-less nFET fabricated at low thermal budget for 3D Sequential Integration (2019) (1)
VSP - A gate stack analyzer (2007) (1)
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping (2020) (1)
Inorganic molecular crystals for 2D electronics (2021) (1)
Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation (2004) (1)
Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs (2004) (1)
Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators (2016) (1)
Special Issue on Miniaturized Transistors, Volume II (2022) (1)
Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects (2019) (1)
Modeling of DCIV recombination currents using a multistate multiphonon model (2011) (1)
Invited) Reliability of SiGe Channel MOS (2013) (1)
Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions (2007) (1)
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs (2015) (1)
Charge Trapping and the Negative Bias Temperature Instability (2010) (1)
Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations (2009) (1)
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors (2015) (1)
Evidence for defect pairs in SiON pMOSFETs (2014) (1)
ADAPTIVE MESH GENERATION FOR TCAD WITH GUARANTEED ERROR BOUNDS (2005) (1)
Simulation of Polysilicon Emitter Bipolar Transistors (2000) (1)
Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements (2011) (1)
PERFORMANCE ANALYSIS FOR HIGH-PRECISION INTERCONNECT SIMULATION (2006) (1)
Process and Device Simulation with a Generic Scientific Simulation Environment (2006) (1)
Investigation of Vector Discretization Schemes for Box Volume Methods (2007) (1)
Modeling and Simulation Approaches for Drain Current Computation (2013) (1)
Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs (2019) (1)
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures (2015) (1)
Multiphonon Processes As the Origin of Reliability Issues (2013) (1)
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models (2009) (1)
Experimental characterization of BTI defects (2013) (1)
Comparison of fast measurement methods for short-term negative bias temperature stress and relaxation (2009) (1)
Investigation of quantum transport in nanoscaled GaN high electron mobility transistors (2014) (1)
Consistent Comparison of Tunneling Models for Device Simulation (1)
Bistable Defects as the Cause for NBTI and RTN (2011) (1)
Hybrid 2D/CMOS microchips for memristive applications. (2023) (1)
Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices (2006) (1)
Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling (2002) (1)
Quantum Correction Models for Modern Semiconductor Devices (1)
Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs (2019) (1)
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors (2020) (1)
Self‐Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering (2007) (1)
Applicability of Shockley-Read-Hall Theory for Interface States (2020) (1)
A Comprehensive Model for Correlated Drain and Gate Current Fluctuations (2013) (1)
INTEGRATING INTERACTIVE DESIGN AND SIMULATION FOR MASS CUSTOMIZED 3D-PRINTED OBJECTS Œ A CUP HOLDER EXAMPLE (2017) (1)
Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture (2022) (1)
A Physically Based Substrate Current Simulation (1997) (1)
Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis (2005) (1)
AUTOMATIC BINDING OF SPICE MODELS TO THE DEVICE / CIRCUIT SIMULATOR MINIMOS-NT (1)
System matrix compression for spherical harmonics expansions of the Boltzmann transport equation (2010) (1)
The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision (2002) (1)
A method to determine the lateral trap position in ultra-scaled MOSFETs (2013) (1)
On the limits of applicability of drift-diffusion based hot carrier degradation modeling (2016) (1)
Expanding TCAD simulations from grid to cloud (2015) (1)
A Tensorial High-Field Electron Mobility Model for Strained Silicon (2006) (1)
A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization (2001) (1)
Impact of single-defects on the variability of CMOS inverter circuits (2021) (1)
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors (2015) (1)
TuP 12 Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements (2011) (0)
Discussion Group (DG) summary: NBTI (2008) (0)
Polarons as a universal source of leakage currents in amorphous oxides: a multiscale modeling approach (2023) (0)
Charging and discharging of oxide defects in reliability issues (2007) (0)
Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI / PBTI in nMOS / pMOS (2018) (0)
EDMO / VIENNA Optimization of High-Speed SiGe HBTs (2001) (0)
Editorial Special Issue on Dielectrics for 2-D Electronics (2023) (0)
Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI / PBTI in nMOS / pMOS (2018) (0)
Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment (2006) (0)
Reliable prediction of deep sub-quarter micron CMOS technology performance (2001) (0)
Vertical localization of trapped holes in SiON pMOSFETs after positive and negative gate stress (2010) (0)
Session 07-A invited (2010) (0)
THREE-DIMENSIONAL STATE-OFTHE-ART TOPOGRAPHY SIMULATION (2005) (0)
Closure relations for macroscopic transport models (2003) (0)
Recent trends in CMOS reliability: From individual traps to circuit simulations (2011) (0)
INSTITUT FÜR MIKROELEKTRONIK / INSTITUTE FOR MICROELECTRONICS (2016) (0)
International Conference on Thermoelectrics 2006 Table of Contents WELCOME ADDRESS (2006) (0)
Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric (2014) (0)
Table of Contents. (2017) (0)
Insulators for 2D nanoelectronics: the gap to bridge (2020) (0)
Chapter 2 Recent Trends in Bias Temperature Instability (2015) (0)
The Limits of Applicability of the Analytic Model for Hot Carrier Degradation (2015) (0)
Applicability of Shockley–Read–Hall Theory for Interface States (2021) (0)
Origin of trap assisted tunnelling in ammonia annealed SiC trench MOSFETs (2022) (0)
Analysis of worst-case hot-carrier conditions for n-type MOSFET (2011) (0)
Simulation of Semiconductor Devices and Circuits at High Frequencies (2001) (0)
Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET (2012) (0)
Vector Discretization Schemes Based on Unstructured Neighborhood Information (2006) (0)
Statistics of SiO bond-breakage rate variations induced by OSiO angle fluctuations (2009) (0)
Hydrodynamic and energy-transport models for semiconductor device simulation: extensions and critical issues (2002) (0)
Numerical Simulation of High-Speed High-Breakdown Indium Phosphide (0)
MESHING ASPECTS ON THREE-DIMENSIONAL FIN-FET DEVICE SIMULATIONS (0)
SiO 2 ( a ) ( b ) Characterization of Single Defects : from Si to MoS 2 FETs (2018) (0)
Contents 1 Parallel and Distributed Simulation 1 (1999) (0)
Analysis of the Features of Hot-Carrier Degradation in FinFETs (2018) (0)
Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and HK Gate Stacks (2008) (0)
TCAD Modeling ofNegative BiasTemperature Instability (2006) (0)
Editorial (2007) (0)
Investigation of correlated trap sites in SILC, BTI and RTN in SiON and HKMG devices (2014) (0)
Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop (2008) (0)
Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors (2014) (0)
TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs (2022) (0)
FULLY THREE-DIMENSIONAL ANALYSIS OF LEAKAGE CURRENT IN NON-PLANAR OXIDES (2005) (0)
Electromigration modelling of void nucleation in open Cu-TSVs (2015) (0)
Comparison of deposition models for a TEOS LPCVD process (2007) (0)
Identifying Oxide Defects in Semiconductor Devices Using Carrier Capture and Emission Rate Calculations (2017) (0)
Building robust machine learning force fields by composite Gaussian approximation potentials (2022) (0)
Simultaneous Extraction ofRecoverable andPermanent Components Contri buting toBias-Temperature Instab ility (2007) (0)
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface (2021) (0)
Dynamic modeling of Si(100) thermal oxidation: Oxidation mechanisms and realistic amorphous interface generation (2022) (0)
Optimization of high-speed SiGe HBTs (2001) (0)
A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation (2010) (0)
D I P L O M A T H E S I S Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS (2016) (0)
Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices (2004) (0)
Towards Understanding Negative Bias Temperature Instability (2008) (0)
Transient electro-thermal investigations of interconnect structures exposed to mechanical stress (2005) (0)
Recent Advances in Understanding Oxide Traps in pMOS Transistors (2013) (0)
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors (2022) (0)
Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors (2022) (0)
TCAD Analysis of Gain Cell Retention Time for SRAM Applications (2001) (0)
MODELING AND SIMULATION OF SiC MOSFETs (0)
Achieving Portable High Performance for Iterative Solvers on Accelerators (2014) (0)
(Invited) Where Are the Best Insulators for 2D Field-Effect Transistors? (2020) (0)
Impact and measurement of s (2012) (0)
SiGe HBT in Mixed-Mode Device and Circuit Simulation (2014) (0)
Description of Si-O bond breakage using pair-wise interatomic potentials under consideration of the whole crystal (2009) (0)
Dielectric Properties of Ultrathin CaF2 Ionic Crystals. (2021) (0)
Reliability Perspective of 2 D Electronics (2016) (0)
Consistent higher-order transport models for SOI MOSFETs (2008) (0)
Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance (2006) (0)
Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models (2022) (0)
Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices (2015) (0)
Macroscopic Transport Models for Microelectronics Devices (2002) (0)
Modeling of the bias temperature instability under dynamic stress and recovery conditions (2012) (0)
THE UNIVERSALITY OF NBTIRELAXATION AND ITSIMPLICATIONS FOR MODELINGAND CHARACTERIZATION (2007) (0)
Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors (2022) (0)
Concepts and Implementation of an Advanced Equation Assembly Module (0)
Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs (2021) (0)
Impact of body bias on nanoscaled MOSFETs with individual trapped gate oxide charges (2011) (0)
Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators (2019) (0)
Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin Barrier Layers in Silicon Microelectronics (2015) (0)
Reliability of SiGe channel MOS (2012) (0)
Field Effect Transistors: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (Adv. Funct. Mater. 18/2020) (2020) (0)
Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics (2009) (0)
ViennaSHE : A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method (2014) (0)
RECENTADVANCESIN TRANSPORTMODELIN G FORMINIATURIZEDC MOSDEVICES (INVITED) (2002) (0)
BENCHMARKING LINEAR SOLVERS WITH SEMICONDUCTOR SIMULATION EXAMPLES (2004) (0)
Reliability challenges of high mobility channel technologies: SiGe, Ge and InGaAs (2014) (0)
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study (2022) (0)
Implications of channel hot carrier degradation in Si0.45Ge0.55 pMOSFETs (2010) (0)
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs (2016) (0)
Reception of Frequency-Coded Synapses through Fabry-Perot SOA-REAM Integrating Weighting and Detection Functions (2022) (0)
MOS-AK: Open Compact Modeling Forum Invited IWCM Paper (2007) (0)
Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs (2022) (0)
Cryogenic to room temperature effects of NBTI in high-k PMOS devices (2011) (0)
Analytical Modeling ofElectron Mobility inStrained Germanium (2006) (0)
Power Output Improvement of SiGe Thermoelectric Generators (2006) (0)
Simulating and Modeling the Influence of Deep Trench Interface Recombination on Si Photodiodes (2022) (0)
Simulation of partially depleted SOI MOSFETS using an improved hydrodynamic transport model (2002) (0)
Development of Experimental Techniques for the Study of Negative Bias Temperature Instability in pMOSFET Devices (2010) (0)
Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices (2015) (0)
Numerical Power/HV Device Modeling (2010) (0)
The Importance of Secondary Generated Carriers in Modeling of Full Bias Space (2022) (0)
Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors (2015) (0)
Temperature-dependent hysteresis in black phosphorus FETs (2016) (0)
Accurate mapping of oxide traps in highly-stable black phosphorus FETs (2017) (0)
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States (2021) (0)
ADVANCED EQUATION ASSEMBLING TECHNIQUES FOR NUMERICAL SIMULATORS (0)
TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors (0)
CONTROLLING SCHEME OF THE DEVICE SIMULATOR MINIMOS-NT (2002) (0)
Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices (2019) (0)
Computational Modeling of Initial Stage Si(100) Surface Oxidation (2022) (0)
Vector Discretization Schemes in Technology CAD Environments (2007) (0)
Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach (2022) (0)
Modeling bias temperature instability during stress and recovery (2008) (0)
Higher-Order Moment Models for Engineering Applications (2005) (0)
High Performance Process and Device Simulation with a Generic Environment (2006) (0)
Machine Learning Prediction of Defect Formation Energies in a-SiO2 (2020) (0)
Towards Understanding Negative Bias Temperature Instability (2008) (0)
Si-O Bond-breakage Energetics Under Consideration of the Whole Crystal (2009) (0)
A non-parabolic six moments model for the simulation of sub-100 nm devices (2004) (0)
AN EXTENDABLE MULTI-PURPOSE SIMULATION AND OPTIMIZATION FRAMEWORK FOR THERMAL PROBLEMS IN TCAD APPLICATIONS (2006) (0)
CaF2 Insulators for Ultrascaled 2D Field Effect Transistors (2019) (0)
Metastability of Negatively Charged Hydroxyl-E’ Centers and their Potential Role in Positive Bias Temperature Instabilities (2022) (0)
High-voltage super-junction SOI-LDMOSFETs with reduced drift length (2003) (0)
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures (2018) (0)
A new gate current model accounting for a non-Maxwellian electron energy distribution function (2002) (0)
An advanced equation assembly module (2005) (0)
Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation (2003) (0)
Revealing the Impact of Gate Area Scaling on Charge Trapping employing SiO2 Transistors (2023) (0)
Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulators (2019) (0)
Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs (2019) (0)
Deterministic Numerical Solution of the Boltzmann Transport Equation (2012) (0)
DISCRETIZATION SCHEMES FOR MACROSCOPIC TRANSPORT EQUATIONS ON NON-CARTESIAN COORDINATE SYSTEMS (2006) (0)
A systematic study of charge trapping in single-layer double-gated GFETs (2016) (0)
SOA-REAM Assisted Synaptic Receptor for Weighted-Sum Detection of Multiple Inputs (2023) (0)
A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays (2023) (0)
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs (2018) (0)
Characterization and modeling of reliability issues in nanoscale devices (2015) (0)
6 angstrom EOT Si0.45Ge0.55 pMOSFET with Optimized Reliability (V-DD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT (2010) (0)
What triggers NBTI? An “on the fly” electron spin resonance approach (2009) (0)
(Late) Reliability and performance considerations for NMOSFET pass gates in FPGA applications (2013) (0)
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors (2019) (0)
VISTA Status Report December 1997 (1997) (0)
Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors (2023) (0)
A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD (2006) (0)
PHYSICAL MODELING OF SEMICONDUCTOR DEVICES FOR MICROWAVE APPLICATIONS (0)
An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution (0)
What triggers NBTI? An “on the fly” electron spin resonance approach (2009) (0)
On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI (2018) (0)
Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress (2017) (0)
A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures (2012) (0)
Applications of Two-and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes (2006) (0)
Encapsulated MoS 2 FETs with Improved Performance and Reliability (2017) (0)
Comprar Simulation of Semiconductor Processes and Devices 2007 · SISPAD 2007 | Grasser, Tibor | 9783211728604 | Springer (2007) (0)

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