Tom Foxon

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Tom Foxon

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Physics

Tom Foxon's Degrees

Masters Physics University of Oxford
Bachelors Physics University of Manchester

Why Is Tom Foxon Influential?

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According to Wikipedia, Tom Charles Bayley Foxon FRS is a British physicist, and emeritus professor at the University of Nottingham.

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Tom Foxon's Published Works

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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Group III nitride semiconductors for short wavelength light-emitting devices (1998) (442)
Lattice parameters of gallium nitride (1996) (348)
Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy (1995) (141)
Direct band-gap crossover in epitaxial monolayer boron nitride (2019) (139)
Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy (2017) (85)
Anisotropic magnetoresistance and magnetic anisotropy in high-quality (Ga,Mn)As films (2005) (84)
Voltage enhancement in quantum well solar cells (1996) (78)
Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates (2008) (77)
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers (2008) (76)
An experimental determination of electrical resistivity of dislocations in aluminium (1966) (67)
Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range (2009) (64)
The growth and properties of group III nitrides (1995) (59)
A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy (2009) (58)
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures (2003) (57)
Photoluminescence of MBE grown wurtzite Be-doped GaN (1998) (52)
An experimental determination of the electrical resistivity of dislocations in copper (1967) (49)
Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN (2000) (49)
Domain boundaries in epitaxial wurtzite GaN (1997) (49)
The dependence of Auger electron yield on primary beam energy at normal and glancing incidence (1972) (48)
The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers (2003) (46)
Energy relaxation by hot electrons in n-GaN epilayers (2001) (46)
MBE growth of GaAs and III‐V alloys (1983) (45)
Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016) (45)
Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy (2008) (44)
Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy (1997) (43)
Low-temperature luminescence study of GaN films grown by MBE (1996) (42)
Highly mismatched GaN 1-x Sb x alloys (2016) (41)
Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)] (2003) (40)
High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN (1999) (36)
Determination of Group III Nitride Film Properties by Reflectance and Spectroscopic Ellipsometry Studies (2000) (35)
Reflectivity study of hexagonal GaN films grown on GaAs: Surface roughness, interface layer, and refractive index (1998) (34)
Strong blue emission from As doped GaN grown by molecular beam epitaxy (2000) (34)
Optically transparent indium-tin-oxide (ITO) ohmic contacts in the fabrication of vertical-cavity surface-emitting lasers (1994) (34)
Dynamics and kinetics of MBE growth (1991) (34)
Systematic errors in dislocation densities measured by thin film electron microscopy (1966) (33)
Morphology of luminescent GaN films grown by molecular beam epitaxy (1996) (33)
Growth of epitaxial thin films of scandium nitride on 100-oriented silicon (2008) (32)
Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates (2010) (31)
Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2016) (30)
Three decades of molecular beam epitaxy (2003) (30)
GaN1−xBix: Extremely mismatched semiconductor alloys (2010) (30)
Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. (2016) (29)
Lattice-Matched Epitaxial Graphene Grown on Boron Nitride. (2018) (29)
Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy (2008) (28)
Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy (2013) (28)
The growth and properties of mixed group V nitrides (1995) (27)
Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry (2010) (27)
The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy (2002) (27)
Auger electron spectroscopy, x‐ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates (1995) (27)
Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy (1999) (27)
Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range (2015) (27)
Band gap of GaN films grown by molecular‐beam epitaxy on GaAs and GaP substrates (1995) (27)
The Effect of Surface Passivation and Illumination on the Device Properties of AlGaN/GaN HFETs (2001) (26)
Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source (1995) (26)
Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content (2009) (25)
Γ-X-Γ electron transfer in mixed type I-type II GaAs/AlAs quantum well structures (1992) (25)
Collective properties of spatially indirect excitons in asymmetric GaAs/AlGaAs double quantum wells (1999) (25)
Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes (2010) (25)
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate (2001) (25)
Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy (1998) (25)
Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy (1997) (24)
Arsenic-doped GaN grown by molecular beam epitaxy (2000) (24)
Contactless detection of current breakdown of the quantum Hall effect (1996) (24)
High-temperature molecular beam epitaxy of hexagonal boron nitride layers (2018) (23)
Low gap amorphous GaN1−xAsx alloys grown on glass substrate (2010) (22)
The implications of spontaneous polarization effects for carrier transport measurements in GaN (2000) (22)
The decay of induced eddy currents in a two-dimensional electron system (1995) (22)
Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE (2000) (22)
Measurement of 'material' parameters in multi-quantum-well structures (1987) (21)
Optimization of RF plasma sources for the MBE growth of nitride and dilute nitride semiconductor material (2007) (21)
Growth and characterization of highly mismatched GaN1−xSbx alloys (2014) (21)
Photoluminescence from GaN films grown by MBE on an substrate (1997) (21)
Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy (1999) (20)
A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride (2001) (20)
Growth and Optical Properties of GaN Grown by MBE on Novel Lattice-Matched Oxide Substrates (1995) (20)
The electron mobility and compensation in n-type GaN (1998) (20)
Nano-fabrication of GaN pillars using focused ion beam etching (1999) (20)
Study of electron-hole generation and recombination in semiconductors using the Osaka free electron laser (2002) (20)
Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy (2009) (19)
Resonance and current instabilities in AlN/GaN resonant tunnelling diodes (2004) (19)
High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire (2016) (19)
Molecular Beam Epitaxy: A Short History (2015) (18)
Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN (2017) (18)
GaN1−xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions (2013) (18)
Phonon drag thermopower and weak localization (1998) (18)
Growth and characterization of free‐standing zinc‐blende GaN layers and substrates (2010) (17)
Determination of the local microstructure of epitaxial AlN by x-ray absorption (1997) (17)
Raman scattering by surface polaritons in cubic GaN epitaxial layers (1997) (17)
Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics (2009) (17)
Incorporation of Mg in GaN grown by molecular beam epitaxy (1999) (17)
Zinc‐blende (cubic) GaN bulk crystals grown by molecular beam epitaxy (2011) (17)
High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes (2018) (16)
A comparison of AlAs/GaAs multiple quantum wells grown by molecular beam and migration-enhanced epitaxy (1990) (16)
Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers (2018) (16)
Mn doping and p-type conductivity in zinc-blende GaMnN layers grown by molecular beam epitaxy (2005) (16)
Growth and transport properties of p-type GaNBi alloys (2011) (16)
Microstructure and composition analysis of group III nitrides by X-ray scattering (2001) (16)
Reflection high-energy electron diffraction studies of wurtzite GaN grown by molecular beam epitaxy (1998) (16)
Picosecond photoluminescence studies of carrier escape processes in a ? single quantum well (1996) (15)
Direct Laser Writing of Nanoscale Light‐Emitting Diodes (2010) (15)
Reflectivity investigations as a method for characterizing group III nitride films (1999) (14)
Free‐standing zinc‐blende (cubic) GaN substrates grown by a molecular beam epitaxy process (2008) (14)
EXAFS studies of Mg doped InN grown on Al2O3 (1999) (14)
Highly mismatched GaN1−xSbx alloys: synthesis, structure and electronic properties (2016) (14)
Anharmonic phonon decay in cubic GaN (2015) (14)
Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE (1997) (14)
Photoluminescence and Raman scattering from GaN layers grown on GaAs and GaP substrates (1995) (14)
An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy (2000) (14)
Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux (1998) (14)
The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer (2008) (13)
Evidence for Shallow Acceptor Levels in MBE Grown GaN (1996) (13)
Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices (2011) (13)
Recombination lifetime measurements in AlGaAs/GaAs quantum well structures (1994) (13)
Yellow Band and Deep levels in Undoped MOVPE GaN. (1996) (13)
Picosecond strain pulses probed by the photocurrent in semiconductor devices with quantum wells (2011) (13)
Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAs (2007) (13)
An atomic carbon source for high temperature molecular beam epitaxy of graphene (2017) (13)
Tailored carrier escape rates in asymmetric double quantum wells (1997) (13)
Photoluminescence of magnesium and silicon doped cubic GaN (2014) (13)
Growth of InNAs on GaAs(1 0 0) substrates by molecular-beam epitaxy (1998) (13)
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth (2017) (12)
A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates (1998) (12)
The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy (2002) (12)
Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt (2012) (12)
Carrier localization and related photoluminescence in cubic AlGaN epilayers (2011) (12)
Observation of resonant Raman lines during the photoluminescence of doped GaN (1997) (12)
Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys (2013) (12)
Depth dependence of the Mn valence and Mn-Mn coupling in (Ga,Mn)N (2007) (12)
Structural characterisation of Al grown on group III-nitride layers and sapphire by molecular beam epitaxy (2002) (12)
Molecular beam epitaxy growth kinetics for group III nitrides (1996) (12)
Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire (2001) (12)
MBE growth and characterization of magnesium-doped gallium nitride (1998) (12)
Auger investigation of group III nitride films grown by molecular beam epitaxy (1995) (12)
Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes (2006) (11)
The growth of high quality GaMnAs films by MBE (2004) (11)
Bismuth a new dopant for GaN films grown by molecular beam epitaxy surfactant effects, formation of GaN1-xBix alloys and co-doping with arsenic (2003) (11)
Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE (2014) (11)
Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE (2001) (11)
Molecular beam epitaxy of p-type cubic GaMnN layers (2005) (11)
Ga-metal inclusions in GaN grown on sapphire (1999) (10)
RHEED Studies of Group III‐Nitrides Grown by MBE (1999) (10)
Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy (2020) (10)
Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals (2011) (10)
Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy (2014) (10)
RHEED studies of the GaN surface during growth by molecular beam epitaxy (1999) (10)
Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations (1997) (10)
Temperature-dependent study of the quasi-Fermi level separation in double quantum well P-I-N structures (2000) (10)
Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy (2011) (10)
Exploration of the growth parameter space for MBE-grown GaN1−xSbx highly mismatched alloys (2015) (10)
Photoelectron spectroscopy study of Ga1-xMnxAs(001) surface oxide and low temperature cleaning (2005) (10)
Study of confined coherent acoustic phonon modes in a free-standing cubic GaN membrane by femtosecond spectroscopy (2015) (10)
Summary Abstract: Kinetic processes in molecular beam epitaxy growth of III–V materials (1986) (10)
Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content (2012) (10)
Temperature dependence of the miscibility gap on the GaN-rich side of the Ga-N-As system (2001) (10)
Thermal stability of amorphous GaN1−xAsx alloys (2011) (9)
Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN (2012) (9)
Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source (2016) (9)
Studies of Mg-GaN grown by MBE on GaAs(111)B substrates (1997) (9)
Carrier relaxation dynamics for As defects in GaN (2001) (9)
Hot Electron Energy Relaxation in Gallium Nitride (1999) (9)
Exafs Studies of Group III-Nitrides (1998) (9)
Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE) (1996) (9)
Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride (2015) (9)
Isoelectronic doping of AlGaN alloys with As and estimates of AlGaN/GaN band offsets (2003) (9)
EXAFS studies of plasma-enhanced MBE grown Group III-Nitrides (1997) (9)
Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates (1996) (8)
The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates (1999) (8)
Influence of internal fields on radiative and nonradiative processes in AlN/GaN superlattices (2004) (8)
GaN devices based on nanorods (2010) (8)
Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures (2021) (8)
Raman Characterization of MBE Grown (Al)GaAsN (2001) (8)
GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates (2011) (8)
Generation of terahertz monochromatic acoustic phonon pulses by femtosecond optical excitation of a gallium nitride/aluminium nitride superlattice (2005) (8)
Temperature effects during the growth of InxGa1−xN films through the whole compositional range by plasma-assisted molecular beam epitaxy (2010) (8)
Ultrafast acoustical gating of the photocurrent in a p-i-n tunneling diode incorporating a quantum well (2009) (8)
Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range (2013) (8)
Transmission electron microscopy investigation of InNAs on GaAs grown by molecular beam epitaxy (1998) (8)
TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs (1996) (8)
Temperature-dependent study of the radiative losses in double-quantum well solar cells (2001) (8)
The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules (2001) (8)
Donor acceptor pair in molecular beam epitaxy grown GaN (1997) (8)
Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality (2000) (8)
Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy (1997) (8)
The nature of arsenic incorporation in GaN (2001) (8)
Photoenhanced wet chemical etching of MBE grown gallium nitride (1999) (8)
Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry (2007) (8)
Selective meltback etching of GaN layers in liquid-phase electroepitaxial technique (1997) (7)
Doping of GaN1-xAsx with high As content (2011) (7)
Substrate temperature dependence of the minority carrier lifetime in (AlGa)As/GaAs MQWs grown with As2 and As4 (1993) (7)
Investigation of the GaN-on-GaAs interface for vertical power device applications (2014) (7)
Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy (2002) (7)
Electrical characterization of single barrier GaAs/GaN/GaAs heterostructures (1995) (7)
Relaxation Processes of AlGaN/GaN Heterostructures Grown onto Single Crystal GaN(0001) Substrates (1999) (7)
Annealing of gallium nitride under high-N2 pressure (1999) (7)
X-ray detection with zinc-blende (cubic) GaN Schottky diodes (2016) (7)
External photoluminescence efficiency and minority carrier lifetime of (Al,Ga)As/GaAs multi‐quantum‐well samples grown by molecular beam epitaxy using both As2 and As4 (1994) (7)
The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy (2001) (7)
Arsenic incorporation in GaN during growth by molecular beam epitaxy (2002) (7)
MBE growth of GaN using 15N isotope for nuclear magnetic resonance applications (2007) (6)
Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy (1997) (6)
On dislocation loss in thin film electron microscopy of polycrystalline copper (1968) (6)
MOMBE growth studies of GaN using metalorganic sources and nitrogen (2003) (6)
Study of GaN thin layers subjected to high-temperature rapid thermal annealing (1998) (6)
Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates (2014) (6)
Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates (1998) (6)
Anomalous influence of magnetic field on the indirect exciton in GaAs/AlGaAs double quantum wells (1998) (6)
Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy (1996) (6)
X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy (2002) (6)
Direct evidence for defect conduction at interface between gallium nitride and sapphire (2000) (6)
Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy (2009) (6)
Transmission electron microscopy of indium gallium nitride nanorods grown by molecular beam epitaxy (2014) (6)
Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method (1996) (6)
Photoemission of Ga1–x Mnx As with high Curie temperature and transformation into MnAs of zincblende structure (2009) (6)
Spin Split Cyclotron Resonance in a 2-D Electron System at Very High Magnetic Fields (1993) (6)
Characterization of nitride thin films by electron backscatter diffraction (2002) (6)
Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source (2016) (6)
On the Origin of Blue Emission from As-Doped GaN (2001) (6)
Electron Diffraction from a 2D Electron Wigner Crystal (1995) (6)
Electron Backscattered Diffraction Patterns from Cooled Gallium Nitride Thin Films (2001) (5)
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources (2017) (5)
Molecular Beam Epitaxy (1988) (5)
A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source (2010) (5)
Tellurium n-type doping of highly mismatched amorphous GaN1−xAsx alloys in plasma-assisted molecular beam epitaxy (2014) (5)
Study of unintentional arsenic incorporation into free‐standing zinc‐blende GaN and AlGaN layers grown by molecular beam epitaxy on GaAs substrates (2010) (5)
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy (2000) (5)
TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate (2000) (5)
Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy (2015) (5)
Positron studies of MBE-grown gallium nitride (1999) (5)
Independent determination of In and N concentrations in GaInNAs alloys (2009) (5)
Electrical properties of n-GaN/n+-GaAs interfaces (1998) (5)
Plasma-assisted electroepitaxy as a method for the growth of GaN layers (2011) (5)
Transparent indium tin oxide (ITO) ohmic contacts to both p- and n-GaAs for surface emitting lasers (1993) (4)
Molecular beam epitaxy of free-standing wurtzite AlxGa1xN layers (2015) (4)
Heat pulse studies of the energy relaxation rate of hot electrons in n-type GaN epilayers (1999) (4)
Tunnelling of Direct and Indirect Excitons in Slightly Asymmetric Double Quantum Wells (1996) (4)
Imaging phonon drag in gallium nitride (2000) (4)
Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy (2012) (4)
Photoluminescence study of silicon-doped GaN grown by MBE on GaAs substrates (1997) (4)
Manifestation of collective properties of spatially indirect excitons in GaAs/AlGaAs asymmetric double quantum wells (1999) (4)
Microstructure of GaN1−xBix (2012) (4)
Modelling Multi Quantum Well Solar Cell Efficiency (2010) (4)
Optical study of the -GaN/GaAs interface properties as a function of MBE growth conditions (1999) (4)
The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy (2001) (4)
Strong blue emission from GaN isoelectronically doped with arsenic (2002) (4)
Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy (2014) (4)
Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals (1999) (4)
The influence of the annealing ambient on strain and doping in GaN during high-temperature processing (1999) (4)
Raman characterization of cubic GaN epitaxial layers grown on (0 0 1)GaAs and GaP substrates (1998) (4)
Studies of p-GaN grown by MBE on GaAs(1 1 1)B (1998) (4)
The current status of plasma assisted MBE growth of group III-nitrides (1998) (4)
Structural characterisation of zinc-blende Ga1−xMnxN epilayers grown by MBE as a function of Ga flux (2005) (4)
Intermixing studies in GaN1-xSbx highly mismatched alloys. (2017) (3)
Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates (2003) (3)
X-ray studies of group III-nitride quantum wells with high quality interfaces (2000) (3)
State of the Art Molecular Beam Epitaxy of III-V Compounds (1995) (3)
Composition and strain relaxation of InxGa1−xN graded core–shell nanorods (2018) (3)
Plasma‐assisted electroepitaxy as a novel method for the growth of GaN layers (2012) (3)
Blue emission from arsenic doped gallium nitride (2001) (3)
Phonon generation by femtosecond pulsed laser excitation of an aluminium nitride/gallium nitride superlattice (2004) (3)
Isoelectronic doping of AlGaN alloys (2003) (3)
Growth of GaNAs films by molecular beam epitaxy (2001) (3)
Studies of Group III-Nitride Growth on Silicon (1996) (3)
Luminescence of excitons in slightly asymmetric double quantum wells (1997) (3)
Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source (2016) (3)
A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy (2001) (3)
Optical characterisation of Bi‐doped GaN films grown by molecular beam epitaxy (2005) (2)
Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs (1999) (2)
Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022) (2)
Absorption of nonequilibrium acoustic phonons by low-mobility electrons in GaN (2001) (2)
Raman spectroscopy of GaAs-AlAs superlattices: a study of interface roughness (1994) (2)
Photoluminescence from self‐assembled GaAs inclusions embedded in a GaN host crystal (2003) (2)
Structural studies of GaN1-x Asx and GaN1-x Bix alloys for solar cell applications (2012) (2)
Indium Nitride and Indium Gallium Nitride layers grown on nanorods (2013) (2)
Study of photoluminescence from self-formed GaAs nanocrystallites in As-doped GaN grown by molecular beam epitaxy (2003) (2)
Molecular beam epitaxy-surface and kinetic effects (1981) (2)
Raman scattering study of undoped and As-doped GaN grown with different III/V ratios (2007) (2)
The Micro-Magnetic Structures of Mn+ Ion-Implanted GaSb (2003) (2)
The Influence of As on the Optimum Nitrogen to Gallium Ratio Required to Grow High Quality GaN Films by Molecular Beam Epitaxy (2001) (2)
Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016) (2)
The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays (2013) (2)
Optimisation of the blue emission from As-doped GaN films grown by molecular beam epitaxy (2002) (2)
Exciton Tunnelling Induced by Nonequilibrium Phonons in Slightly Asymmetric Double Quantum Wells (1997) (2)
Plasma-assisted electroepitaxy of GaN layers (2013) (2)
Highly Mismatched GaN 1x Sb x Alloys : Synthesis , Structure and Electronic Properties (2016) (2)
Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy (2014) (2)
Photoluminescence microscopy investigation of lattice relaxation and defect formation processes in pseudomorphically strained InGaAsN multiple quantum wells (2008) (2)
Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy (1998) (2)
71Ga Nuclear Magnetic Relaxation Measurements in Zinc‐blende GaN (2007) (2)
Characterization of p-GaN1−xAsx/n-GaN PN junction diodes (2016) (2)
Spatially Resolved Cathodoluminescence Study of As Doped GaN (2001) (2)
Amorphous GaN1−xAsx alloys for multi-junction solar cells (2010) (1)
Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layers (2013) (1)
Microstructure of Mg doped GaNAs alloys (2013) (1)
Zinc‐blende (Cubic) GaN and AlGaN Layers, Structures and Bulk Crystals by Molecular Beam Epitaxy (2010) (1)
Wurtzite-to Amorphous-to Cubic Phase Transition of GaN1-XAsx Alloys with Increasing as Content (2012) (1)
Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi (2017) (1)
Anion modulation epitaxy (AME), an alternative growth strategy for group III‐nitrides (2012) (1)
Quasi-particle recombination and spatial ordering of 2D electrons in the extreme quantum limit (1994) (1)
Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxy (2015) (1)
Angle Resolved NEXAFS Spectra of Hexagonal and Cubic GaN (1997) (1)
Nonradiative processes and phonon emission in GaAsN alloys (2002) (1)
InGaN Technology for IBSC Applications (2012) (1)
Free Exciton Recombination in Tensile Strained GaN Grown on GaAs (1997) (1)
The growth of high quality GaMnAs layers and heterostructures by molecular beam epitaxy (2007) (1)
The growth of GaN films by migration enhanced epitaxy (1996) (1)
Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2017) (1)
Identification of the cubic and hexagonal polytypes of GaN with X-ray absorption measurements (1997) (1)
Optical Enhancement of 15N Nuclear Magnetic Resonance in Zinc‐blende Ga15N (2007) (1)
Modelling Photocathode Performance using Density Functional Theory (2019) (1)
Influences of Boundary Condition on Laminar Natural Convection of Bingham Fluids in Square Cross-Sectioned Cylindrical Annular Enclosures with Differentially Heated Vertical Walls (2018) (1)
Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa 1-xN (2017) (1)
Novikov, S. V. and Staddon, C. R. and Luckert, F. and Edwards, P. R. and Martin, R. W. and Kent, A. J. and Foxon, C. T. (2012) Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy (2018) (0)
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)] (1998) (0)
History of MBE (2019) (0)
The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy (2003) (0)
An atomic carbon source for high temperature molecular beam epitaxy of graphene (2017) (0)
High-temperature Plasma-assisted Molecular Beam Epitaxy of hBN Layers (2019) (0)
Time-resolved single-electron tunnelling between Landau states in a quantum dot (1996) (0)
Growth and characterization of highly mismatched GaN 1 2 x Sb x alloys (2018) (0)
Characterisation of nitrides by energy filtered TEM and EELS (2003) (0)
Optical Effect of Electric Field on Indirect Exciton Luminescence in Double Quantum Wells of GaAs (1998) (0)
Microwave Excitations in the 2D Electron System GaAs/AlGaAs (1995) (0)
The FAST ACCESS project: Low cost 1.3 µm sources for FAST ACCESS technologies (2006) (0)
Reduced‐threshold‐current vertical cavity surface‐emitting laser (1995) (0)
Doping of GaN 1 2 xAsx with high As content (2011) (0)
The microstructure of (0001)GaN films grown by molecular beam epitaxy from a nanocolumn precursor layer (2008) (0)
N- and Al-K-Edge EXAFS of AIN Grown on GaAs by MBE (1997) (0)
Photoluminescence Spectroscopy of Incompressible Electron Liquid States in GaAs (1993) (0)
Nitrides, Phosphides, Antimonides and Bismides (2015) (0)
MBE of GaN with DC-plasma source for nitrogen activation (1997) (0)
Far-infrared characterization of GaN epilayers (2001) (0)
Surface Polariton Raman Spectroscopy in Cubic GaN Epitaxial Layers (1997) (0)
A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy (1993) (0)
MOMBE growth studies of GaN using metalorganic sources and N or NH/sub 3/ (2002) (0)
Efficient near IR photoluminescence from gallium nitride layers doped with arsenic (2005) (0)
Suppression of Hexagonal GaN in Cubic GaN Growth by In Surfactant Effect Combined with the Precise Control of V/III Ratio (2001) (0)
Nitridation of the surface of LiGaO 2 substrates in molecular-beam epitaxy (1996) (0)
A Tem Study Of The Microstructural Evolution Of Mbe-Grown Gan (1997) (0)
Non-radiative processes in gallium nitride based superlattices (2004) (0)
Kinetics in Molecular Beam Epitaxy — Modulated Beam Studies (1990) (0)
Direct band-gap crossover in epitaxial monolayer boron nitride (2019) (0)
Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy (2003) (0)
Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates (1997) (0)
Energy Relaxation Rate of Hot Electrons in N-Type GaN Epilayers using Heat Pulse Techniques (1999) (0)
CrlfstaZ Growth 5 ( 197 eJ 185-197-FUNDAMENTALS OF MOLECULAR BEAM EPITAXY (2014) (0)
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)] (1998) (0)
Local Structure of Amorphous GaNAs Alloys Across the Composition Range (2012) (0)
REFLECTANCE AND ELECTROREFLECTANCE OF MBE GROWN GaN LAYERS (1997) (0)
Three decades of MBE (2002) (0)
Activated nitrogen source with an inverted magnetron geometry for molecular beam epitaxy of GaN (1996) (0)
Nanometre precision of semiconductor multilayer growth (1996) (0)
Electronic energy levels, wavefunctions and potential landscape of nanostructures probed by magneto-tunnelling spectroscopy (2011) (0)
STATE OF THE ART MOLECULAR BEAM ΕPIΤΑΧΥ OF III-V COMPOUNDS C (2013) (0)
Alloys : Synthesis , Structure and Electronic Properties (2018) (0)
1 Characterization of p-GaN 1-xAsx / nGaN PN Junction Diodes (2017) (0)
Doping of GaN 1-x As x with High As content (2011) (0)
Angular Dependence of Luminescence from GaAs/AlGaAs DQW (1999) (0)
The structure of dislocations in GaN grown by MBE as a function of the gallium to nitrogen ratio (2003) (0)
1 Characterization of GaN 1x As x / GaN PN Junction Diodes (2016) (0)
TEM assessment of As-doped GaN epitaxial layers grown on sapphire (2004) (0)
CBE growth and characterization on InGaAsN/InP quantum well structures using NH3 (2000) (0)
Magnetisation measurements on two-dimensional electron systems in the magnetic quantum limit (1995) (0)
II-VI and IV-VI Compounds and Si/Ge (2015) (0)
The electrical resistivity of dislocations in aluminium (1965) (0)
Study of electron dynamics in n -type GaN using the Osaka free electron laser (2004) (0)
Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy (1997) (0)
Nanorods as a precursor for high quality GaN layers (2008) (0)
MBE—The Early History (2015) (0)
High-temperature molecular beam epitaxy of hexagonal boron nitride layers (Conference Presentation) (2018) (0)
Transverse depinning threshold revealed by non linear Hall effect of Wigner solid in a disorder field (2002) (0)
Comparison of lattice relaxation processes in pseudomorphically strained InGaAsN/GaAs and InGaAs/GaAs multiple quantum wells (2007) (0)
The Influence of Arsenic Incorporation on the Optical Properties of As‐doped GaN Films Grown by Molecular Beam Epitaxy Using Arsenic Tetramers (2001) (0)
Novikov, Sergei V. and Staddon, Chris R. and Whale, Josh and Kent, Anthony J. and Foxon, C. Thomas (2016) Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma (2017) (0)
The phonon-drag effect in low mobility gallium nitride epilayers (2002) (0)
Mn doping of InAs quantum dots studied by X-STM. (2009) (0)
Modeling Photocathode Performance Using MedeA-VASP Simulation Software (2020) (0)
Modified Growth Techniques (2015) (0)
Ultrafast Acoustic Gating of Photocurrent in Nanodevices with Quantum Wells (2011) (0)
Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers (1997) (0)
Molecular beam epitaxy of free-standing wurtzite Al x Ga 1 x N layers (2015) (0)
Growth of GaN and related materials for light emitting devices (1995) (0)
Growth and characterization of highly mismatched GaN 1 2 xSbx alloys (2014) (0)
Low dimensional structures (2008) (0)
The relationship between epitaxial growth, defect microstructure and luminescence in GaN (2022) (0)

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University of Nottingham
Imperial College London
University of Oxford
Newcastle University
University of Manchester
University of Surrey

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