Tso-Ping Ma
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Engineering
Tso-Ping Ma's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering National Taiwan University
Why Is Tso-Ping Ma Influential?
(Suggest an Edit or Addition)According to Wikipedia, Tso-Ping Ma was a Chinese-American electronic engineer and professor of electrical engineering and applied physics at Yale University, USA. Early life Tso-Ping Ma was born in Lanzhou, China in 1945, but relocated to Taiwan to escape the Chinese Civil War. After graduating from National Taiwan University in 1968, he moved to live and study in the United States. He completed his Ph.D. degree from Yale University in 1974.
Tso-Ping Ma's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Ionizing radiation effects in MOS devices and circuits (1989) (906)
- Black Phosphorus Mid-Infrared Photodetectors with High Gain. (2016) (528)
- Why is nonvolatile ferroelectric memory field-effect transistor still elusive? (2002) (372)
- Making silicon nitride film a viable gate dielectric (1998) (275)
- Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics (2002) (237)
- Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics (2004) (229)
- Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric (2000) (174)
- Charge trapping in ultrathin hafnium oxide (2002) (156)
- Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content (1998) (146)
- High‐quality transparent conductive indium oxide films prepared by thermal evaporation (1980) (130)
- Polarity dependent gate tunneling currents in dual-gate CMOSFETs (1998) (129)
- The impact of device scaling on the current fluctuations in MOSFET's (1994) (126)
- Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films (1997) (125)
- Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (2016) (120)
- High-quality oxide/nitride/oxide gate insulator for GaN MIS structures (2001) (119)
- Lateral profiling of oxide charge and interface traps near MOSFET junctions (1993) (107)
- Interface trap transformation in radiation or hot-electron damaged MOS structures (1989) (106)
- Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's (1998) (105)
- Temperature dependence of channel mobility in HfO/sub 2/-gated NMOSFETs (2004) (105)
- Radiation Response of MOS Capacitors Containing Fluorinated Oxides (1987) (100)
- Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/ (1988) (99)
- Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitors (1975) (99)
- Making Silicon Nitride Film a Viable Gate Dielectric (1998) (96)
- Hot-electron hardened Si-gate MOSFET utilizing F implantation (1989) (96)
- Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs (2001) (95)
- SrBi2Ta2O9 memory capacitor on Si with a silicon nitride buffer (1998) (91)
- Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application (2009) (88)
- On physical models for gate oxide breakdown (1984) (84)
- Effects of electron‐beam radiation on MOS structures as influenced by the silicon dopant (1977) (77)
- Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric (2008) (74)
- A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation (2018) (74)
- Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels (2010) (73)
- Anomalous diffusion of fluorine in silicon (1992) (70)
- Dependence of X-Ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures (1984) (70)
- HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport (2001) (66)
- Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics (1999) (66)
- Gate‐width dependence of radiation‐induced interface traps in metal/SiO2/Si devices (1983) (65)
- Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method (2013) (65)
- Oxide thickness dependence of electron‐induced surface states in MOS structures (1975) (64)
- Frenkel-Poole trap energy extraction of atomic layer deposited Al2O3 and HfxAlyO thin films (2007) (64)
- Kilovolt AlGaN/GaN HEMTs as Switching Devices (2001) (63)
- Work function of In2O3 film as determined from internal photoemission (1980) (62)
- Scattering of silicon inversion layer electrons by metal/oxide interface roughness (1987) (58)
- Metal–oxide–semiconductor gate oxide reliability and the role of fluorine (1992) (54)
- Dielectric characteristics of fluorinated ultradry SiO2 (1989) (52)
- Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics (2018) (51)
- Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen (2013) (48)
- Special reliability features for Hf-based high-/spl kappa/ gate dielectrics (2005) (47)
- Two distinct interface trap peaks in radiation‐damaged metal/SiO2/Si structures (1987) (44)
- Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure (2002) (44)
- Surface-state spectra from thick-oxide MOS tunnel junctions (1974) (44)
- Dependence of radiation‐induced interface traps on gate Al thickness in metal/SiO2/Si structures (1984) (44)
- Effect of stress relaxation on the generation of radiation‐induced interface traps in post‐metal‐annealed Al‐SiO2‐Si devices (1984) (43)
- Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme (2007) (42)
- 1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps (1993) (42)
- Role of implantation‐induced defects in surface‐oriented diffusion of fluorine in silicon (1994) (41)
- Hot‐electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate‐induced strain (1986) (41)
- Erase Source Bias on Flash EPROM Device Reliability (1995) (41)
- Retention mechanism study of the ferroelectric field effect transistor (2011) (40)
- High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics (2004) (40)
- A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions (1991) (39)
- High performance gate first HfSiON dielectric satisfying 45nm node requirements (2005) (39)
- Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? (2002) (38)
- Theory of complementary holograms arising from electron–hole transport in photorefractive media (1990) (38)
- Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs (2013) (38)
- A new method to extract EOT of ultrathin gate dielectric with high leakage current (2004) (38)
- Possible observation of Pb0 and Pb1 centers at irradiated (100)Si/SiO2 interface from electrical measurements (1991) (36)
- Electrical properties and interfacial structure of epitaxial LaAlO3 on Si (001) (2009) (34)
- Radiation and hot‐electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane (1988) (34)
- Temperature dependence of gate currents in thin Ta2O5 and TiO2 films (2001) (32)
- Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system (1997) (31)
- Charge Trapping in Al2O3/$\beta$ -Ga2O3-Based MOS Capacitors (2018) (31)
- Inelastic electron tunneling spectroscopy study of traps in ultrathin high-k gate dielectrics (2003) (31)
- Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFETs (1998) (31)
- AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact (2012) (30)
- Causes of ferroelectricity in HfO2-based thin films: an ab initio perspective. (2019) (29)
- Effect of gamma‐ray irradiation on the surface states of MOS tunnel junctions (1974) (29)
- Channel length dependence of random telegraph signal in sub-micron MOSFET's (1994) (29)
- rf annealing mechanisms in metal‐oxide‐semiconductor structures—an experimental simulation (1980) (28)
- Interface trap generation and electron trapping in fluorinated SiO2 (1991) (28)
- Gate dielectric properties of silicon nitride films formed by jet vapor deposition (1997) (28)
- Field and temperature acceleration of time-dependent dielectric breakdown for reoxidized-nitrided and fluorinated oxides (1992) (28)
- Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO (2003) (27)
- Effect of radiation-induced interface traps on 1/f noise in MOSFET's (1992) (27)
- Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM) (1999) (27)
- Radiation hardened micron and submicron MOSFETs containing fluorinated oxides (1989) (26)
- Channel length and width dependence of hot-carrier hardness in fluorinated MOSFETs (1989) (26)
- Random telegraph signals arising from fast interface states in metal‐SiO2‐Si transistors (1992) (25)
- Equivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection (1988) (25)
- Screening of Oxide/GaAs Interfaces for MOSFET Applications (2008) (25)
- Ferroelectric DRAM (FEDRAM) FET With Metal/SrBi Ta O /SiN/Si Gate Structure (2002) (25)
- Highly transparent conductive films of thermally evaporated In2O3 (1981) (24)
- Current - voltage characteristic of asymmetric ferroelectric capacitors (1996) (24)
- Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors (2013) (24)
- High-quality MNS capacitors prepared by jet vapor deposition at room temperature (1992) (24)
- A new technique for determining the capacitive coupling coefficients in flash EPROMs (1992) (24)
- Effects of X-ray irradiation on GIDL in MOSFETs (1992) (24)
- Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion (2007) (24)
- Interface traps generated by internal photoemission in Al‐SiO2‐Si structures (1983) (24)
- Optically induced bistable states in metal/tunnel‐oxide/semiconductor (MTOS) junctions (1981) (23)
- Transconductance in nitride-gate or oxynitride-gate transistors (1999) (23)
- Electroluminescence emission from indium oxide and indium‐tin‐oxide (1985) (23)
- Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs (2015) (23)
- Tunneling leakage current in ultrathin (<4 nm) nitride/oxide stack dielectrics (1998) (23)
- Hot-carrier effects in fully depleted submicrometer NMOS/SIMOX as influenced by back interface degradation (1992) (23)
- Special Reliability Features for Hf-Based High- Gate Dielectrics (2005) (22)
- Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps (2005) (22)
- The effect of fluorine implantation on the interface radiation hardness of Si‐gate metal‐oxide‐semiconductor transistors (1989) (22)
- The Effect of Metal Masks on the Plasma Etch Rate of Silicon (1989) (22)
- Ionizing radiation damage near CMOS transistor channel edges (1992) (22)
- Passivation of (111) Si/SiO2 interface by fluorine (1992) (21)
- SEB Hardened Power MOSFETs With High-K Dielectrics (2015) (21)
- High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric (2000) (21)
- Radiation-Induced Interface Traps in Mo/SiO2/Si Capacitors (1987) (21)
- Highly Reliable Silicon Nitride Thin Films Made by Jet Vapor Deposition (1995) (21)
- Dependence of radiation‐induced interface traps on gate electrode material in metal/SiO2/Si devices (1985) (21)
- Comparison of single- and two-species models of electron–hole transport in photorefractive media (1992) (20)
- Orientation dependence of interface-trap transformation (1989) (19)
- A front-gate charge-pumping method for probing both interfaces in SOI devices (1998) (19)
- Removal of radiation‐induced electron traps in MOS structures by rf annealing (1980) (18)
- Advanced Dual Metal Gate MOSFETs with High-k Dielectric for CMOS Application (2006) (18)
- Pre‐Oxidation Fluorine Implantation into Si Process‐Related MOS Characteristics (1992) (18)
- Random telegraph signals in small MOSFETs after X-ray irradiation (1991) (18)
- Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer (1998) (18)
- Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides (1992) (18)
- Radiation effects on fluorinated field oxides and associated devices (1990) (17)
- Gate-oxide breakdown accelerated by large drain current in n-channel MOSFET's (1991) (17)
- MIS structures based on spin‐on SiO2 on GaAs (1979) (17)
- High performance 0.1 /spl mu/m gate-length p-type SiGe MODFET's and MOS-MODFET's (2000) (17)
- Growth and structural properties of crystalline LaAlO3 on Si (001) (2008) (17)
- Lateral distribution of radiation-induced damage in MOSFETs (1991) (17)
- Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching (2020) (17)
- Lateral profiling of interface traps and oxide charge in MOSFET devices: charge pumping versus DCIV (2001) (17)
- Electrical Characterization of Gate Traps in FETs With Ge and III–V Channels (2013) (17)
- Impact of radiation-induced nonuniform damage near MOSFET junctions (1993) (17)
- Reduction of apparent dopant concentration in the surface space charge layer of oxidized silicon by ionizing radiation (1984) (16)
- p-Type SiGe transistors with low gate leakage using SiN gate dielectric (1999) (16)
- Mask Dependent Etch Rates II The Effect of Aluminum vs. Photoresist Masking on the Etch Rates of Silicon and Silicon Dioxide in Fluorine Containing Plasmas (1987) (16)
- Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4 (2007) (16)
- A Critical Examination of ‘Quasi-Static Negative Capacitance’ (QSNC) theory (2018) (16)
- Effects of electron‐beam irradiation on the properties of CVD Si3N4 films in MNOS structures (1976) (16)
- Effect of H on interface properties of Al2O3/In0.53Ga0.47As (2011) (15)
- Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration (1997) (15)
- The Effect of Aluminum vs. Photoresist Masking on the Etching Rates of Silicon and Silicon Dioxide in CF 4 / O 2 Plasmas (1987) (15)
- Impacts of fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs (2014) (15)
- Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics (2010) (15)
- Improved charge-pumping method for lateral profiling of interface traps and oxide charge in MOSFET devices (1999) (15)
- Molybdenum metal gate MOS technology for post-SiO/sub 2/ gate dielectrics (2000) (15)
- Processing dependence of metal/tunnel‐oxide/silicon junctions (1980) (15)
- AC transconductance: A novel method to characterize oxide traps in advanced FETs without a body contact (2012) (14)
- Infrared transparent and electrically conductive thin film of In2O3 (1983) (14)
- Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors (2013) (14)
- High quality ultra-thin (1.5 nm) TiO/sub 2/-Si/sub 3/N/sub 4/ gate dielectric for deep sub-micron CMOS technology (1999) (14)
- Direct lateral profiling of both interface traps and oxide charge in thin gate MOSFET devices (1996) (13)
- Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors (2012) (13)
- Single-transistor-latch-induced degradation of front- and back-channel thin-film SOI transistors (1992) (13)
- A 1.1 nm oxide equivalent gate insulator formed using TiO/sub 2/ on nitrided silicon (1998) (13)
- Low pressure rf annealing: A new technique to remove charge centers in MIS dielectrics (1978) (13)
- Interface properties in fluorinated (100) and (111)Si/SiO 2 MOSFETs (1993) (12)
- Properties of Si‐rich SiNx:H films prepared by plasma‐enhanced chemical vapor deposition (1988) (12)
- Charge Collection Mechanisms in GaAs MOSFETs (2015) (12)
- Photocurrent in thermal SiO2 under x‐ray irradiation: Significance of contact injection (1982) (12)
- Investigation of fluorine in SiO2 and on Si surface by the 19F(p,αγ)16O reaction, secondary‐ion mass spectrometry, and x‐ray photoelectron spectroscopy (1990) (11)
- Time evolution of capture cross sections of radiation‐induced Si/SiO2 interface traps studied by single‐frequency ac conductance technique (1991) (11)
- INTERFACE TRAPS IN JET-VAPOR-DEPOSITED SILICON NITRIDE-SILICON CAPACITORS (1996) (11)
- A study of electrically active traps in AlGaN/GaN high electron mobility transistor (2013) (11)
- Hot-carrier effects on interface-trap capture cross sections in MOSFETs as studied by charge pumping (1992) (11)
- Front- and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates (1998) (11)
- ac conductance measurements on radiation‐damaged (100) Si/SiO2 interface after defect transformation (1990) (10)
- Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric (2018) (10)
- SONOS-Type Flash Memory Cell With Metal Structure for Low-Voltage High-Speed Program/Erase Operation (2008) (10)
- The effect of RF annealing upon electron-beam irradiated MIS structures (1979) (10)
- JVD silicon nitride as tunnel dielectric in p-channel flash memory (2002) (10)
- Spatial distribution of radiation‐induced interface traps under the gate of an Al/SiO2/Si capacitor (1985) (10)
- Reduction of interface-trap density in metal-oxide-semiconductor devices by irradiation (1993) (10)
- Effects of water vapor anneal on MIS devices made of nitrided gate dielectrics (1996) (10)
- Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs (2017) (10)
- Generation and transformation of interface traps in MOS structures (1993) (10)
- Interface‐trap transformation at radiation‐damaged (111)Si/SiO2 interface (1989) (10)
- Highly Reliable Silicon Nitride Films Made by Jet Vapor Deposition (1994) (9)
- Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel (2017) (9)
- Ferroelectric Pb(Zr,Ti)03 Thin Films Prepared by Gas Jet Deposition, (1992) (9)
- Analysis of enhanced hot-carrier effects in scaled flash memory devices (1998) (9)
- Electron trapping during high‐field tunneling injection in metal‐oxide‐silicon capacitors: The effect of gate‐induced strain (1987) (9)
- Reliability of MOSFETs as affected by the interface trap transformation process (1989) (9)
- Enhanced electron trapping near channel edges in NMOS transistors (1992) (9)
- Retention and Endurance of FeFET Memory Cells (2019) (9)
- Total Ionizing Dose Radiation Effects in Al 2 O $_{3}$ -Gated Ultra-Thin Body In $_{0.7}$ Ga $_{0.3}$ As MOSFETs (2013) (9)
- Ultra-thin ZrO/sub 2/ (or silicate) with high thermal stability for CMOS gate applications (2001) (9)
- Unveiling the Apparent “Negative Capacitance” Effects Resulting From Pulse Measurements of Ferroelectric-Dielectric Bilayer Capacitors (2020) (8)
- Oxide charge buildup and spread-out during channel-hot-carrier injection in NMOSFETs (1992) (8)
- Opportunities and challenges for high-k gate dielectrics (2004) (8)
- Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3 (2007) (8)
- Metal-insulator-semiconductor structure on low-temperature grown GaAs (2006) (8)
- High-quality high-k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories (2008) (8)
- Effects of avalanche hole injection in fluorinated SiO/sub 2/ MOS capacitors (1993) (7)
- Mobility degradation in very thin Oxide p-channel MOSFET's (1985) (7)
- Effects of trichloroethane during oxide growth on radiation‐induced interface traps in Metal/SiO2/Si capacitors (1987) (7)
- Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface (2011) (7)
- High‐field tunneling calculations in metal‐oxide‐silicon capacitors incorporating the perimeter effect (1986) (7)
- Hot-carrier effects on gate-induced-drain-leakage (GIDL) current in thin-film SOI/NMOSFET's (1994) (7)
- Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique (1992) (7)
- Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors (2016) (7)
- Sub-quarter micron Si-gate CMOS with ZrO/sub 2/ gate dielectric (2001) (7)
- Determination of trap energy levels in AlGaN/GaN HEMT (2013) (6)
- Voltage and frequency dependence of simulated rf plasma annealing in metal‐SiO2‐Si structures (1982) (6)
- Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire (2016) (6)
- Tunneling spectroscopy of the silicon metal-oxide-semiconductor system (1998) (6)
- FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor (2014) (6)
- SrBi2Ta2O9(SBT) thin films prepared by electrostatic spray (1997) (6)
- Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs (2017) (6)
- Perimeter‐related current in high‐field tunneling into SiO2 (1985) (6)
- High quality ultra-thin TiO/sub 2//Si/sub 3/N/sub 4/ gate dielectric for giga scale MOS technology (1998) (6)
- Top electrode dependence of forming gas annealing effects on ferroelectric films (1997) (6)
- Optical Properties of Jet-Vapor-Deposited TiAlO and HfAlO Determined by Vacuum Utraviolet Spectroscopic Ellipsometry (2003) (6)
- Interface traps at midgap during defect transformation in (100) Si/SiO2 (1988) (6)
- Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si (2001) (5)
- Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition (2003) (5)
- A charge pumping method for rapid determination of interface‐trap parameters in metal‐oxide‐semiconductor devices (1992) (5)
- Ultra-thin Nitride/oxide Stack Dielectric Produced By In-situ Jet Vapor Deposition (1997) (5)
- Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy (2010) (5)
- Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths (2000) (5)
- Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics (2011) (5)
- Properties of plasma‐deposited Si‐rich silicon nitride films in current enhancement injectors (1988) (5)
- Electrical characterization of high-k gate dielectrics (2004) (5)
- Back-channel hot-electron effect on the front-channel characteristics in thin-film SOI MOSFETs (1991) (5)
- Inelastic electron tunneling spectroscopy study of ultrathin Al2O3–TiO2 dielectric stack on Si (2010) (5)
- Effect of nonuniform carrier distribution on channel mobility measurement in metal/SiO2/Si field effect transistors (1987) (4)
- Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si3N4 as gate dielectric (2008) (4)
- A Study of BEOL Processed Hf0.5Zr0.5O2-based Ferroelectric Capacitors and Their Potential for Automotive Applications (2020) (4)
- Thickness measurement of ultra-thin gate dielectrics under inversion condition (2001) (4)
- Properties And Applications Of Infrared Transparent And Electrically Conductive In2O3 Thin Film (1984) (4)
- Charge Trapping in Al 2 O 3 / β-Ga 2 O 3-Based MOS Capacitors (2018) (4)
- Radiation‐induced enhancement of minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with trichloroethane additive (1988) (4)
- High permittivity gate insulators TiO/sub 2/ and ZrO/sub 2/ (1999) (4)
- Improvement of radiation hardness due to aging of fluorinated and chlorinated SiO/sub 2//Si MOS capacitors (1992) (4)
- Improved method for lateral profiling of interface traps and oxide charge in MOSFET devices (1999) (4)
- Time‐dependent evolution of SiO2/Si interface traps after repeated radiation damage (1988) (4)
- High performance 0.15 /spl mu/m self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric (1999) (4)
- Determination of Si/SiO 2 interfacial roughness using weak localization (1993) (4)
- SONOS-Type Flash Memory Cell With Metal $/\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{SiN}/\hbox{Si}_{3}\hbox{N}_{4}/\hbox{Si}$ Structure for Low-Voltage High-Speed Program/Erase Operation (2008) (4)
- Effect of Aluminum vs. Photoresist Masking on the Etching Rates of Silicon and Silicon Dioxide in CF4/O2 Plasmas. (1987) (3)
- Apparent ‘Negative Capacitance’ Effects in the Pulse Measurements of Ferroelectrics (2021) (3)
- Demonstration of a flash memory cell with 55 /spl Aring/ EOT silicon nitride tunnel dielectric (2001) (3)
- Investigation of GaN channel thickness on the channel mobility in AlGaN/GaN HEMTs grown on sapphire substrate (2017) (3)
- Effects of combined x-ray Irradiation and hot-electron injection on NMOS transistors (1992) (3)
- A low voltage erase technique for DINOR flash memory devices (1999) (3)
- FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor (2008) (3)
- Reliability issues concerning thin gate SiO2 and SiO2/Si interface for ULSI applications (1993) (3)
- High-Quality $\hbox{Al}_{2}\hbox{O}_{3}$ for Low-Voltage High-Speed High-Temperature (Up to 250 $^{\circ}\hbox{C}$ ) Nonvolatile Memory Technology (2010) (3)
- Adaptive refreshing and read voltage control scheme for FeDRAM (2016) (3)
- Radiation and Hot-Electron Hardness of SiO2/Si Grown in O2 with Trichloroethane Additive (1988) (3)
- Evidence for (100) Si/SiO/sub 2/ interfacial defect transformation after ionizing radiation (1988) (3)
- Gate Quality Al2O3 by Molecular-Atomic-Deposition (MAD) and its Potential Applications in III-V Semiconductor CMOS Technology (2007) (2)
- The dual role of PZT in metal-PZT-Al2O3 structure for nonvolatile memory cell (2010) (2)
- Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center (2006) (2)
- Early stages of interface‐trap transformation in metal‐SiO2‐(100)Si structures (1990) (2)
- Electrical Characterization of High-k Gated MOSFETs and Interfaces (2004) (2)
- Role of Implantation-Induced Defects in Surface-Oriented Diffusion of Fluorine in Silicon (1994) (2)
- Observation of interface traps in the silicon conduction band at the (100)Si/SiO2 interface at 4.2 K (1992) (2)
- Integration issues with high k gate stacks (2003) (2)
- Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics (2017) (2)
- RF annealing of radiation-induced electron traps in MOS structures (1979) (2)
- GaP-based MIS Capacitors Using a SiN Gate Dielectric (2003) (2)
- Hot-Carrier Effects on Interface-Trap Capture Studied by Cross Sections in MOSFET's as Charge Pumping (1992) (2)
- The Use Of Jet-vapor Deposited Silicon Nitride For Scaled Dram Applications (1997) (2)
- Pre‐Oxidation Fluorine Implantation Into Si. Process‐Related MOS Characteristics. (1992) (2)
- Determination of Si/SiO/sub 2/ interface roughness using weak localization (1993) (2)
- Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers (2000) (2)
- High temperature (450/spl deg/C) reliable NMISFET's on p-type 6H-SiC (1999) (2)
- Energy shift of (100)Si/SiO2 interface traps resulting from avalanche hole injection (1992) (2)
- Study of gate oxide traps in HfO [ subscript 2 ] / AlGaN / GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method (2014) (2)
- Characterization Of Conditions Required To Implement Submicron Processes Over Topography Using Dry Develop Method(S) (1988) (2)
- Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride (2001) (2)
- Two Silicon Nitride Technologies for Post (2001) (2)
- Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams (2007) (2)
- (Keynote) Unipolar CMOS Logic for Post-Si ULSI and TFT Technologies (2011) (2)
- Inelastic Electron Tunneling Spectroscopy (IETS) Study of Ultra-Thin Gate Dielectrics for Advanced CMOS Technology (2011) (2)
- RF annealing: A method of removing radiation damage in MIS structures (1977) (2)
- High permittivity gate insulators TiO2 and ZrO2 (1999) (1)
- Mechanism of Gm degradation and comparison of Vt instability and reliability of HfO/sub 2/, HfSiO/sub x/ and HfAlO/sub x/ gate dielectrics with 80 nm poly-Si gate CMOS (2005) (1)
- Inelastic Electron Tunnelling Spectroscopy (IETS) of High‐k Dielectrics (2005) (1)
- Improving hot-electron hardness of narrow channel MOSFETs by fluorine implantation (1991) (1)
- Charge Trapping: A Major Reliability Challenge for High-k Gate Dielectrics (2006) (1)
- Front-Channel Hot-Carrier Effect on the Drain-Source Breakdown Voltage in Thin-Film Soi/nmosfet's (1992) (1)
- Radiation-induced interface traps in MoSiO/sub 2/Si capacitors (1987) (1)
- Group IVB Oxides as High Permittivity Gate Insulators (1999) (1)
- JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics (1999) (1)
- Time‐dependent changes of parasitic effects induced by high‐field electron injection in metal‐oxide‐semiconductor transistors (1991) (1)
- Reaction of interfacial layer and trapping in HfO/sub 2/ gated MOS structures (2004) (1)
- Thin Film Thickness and Grain Structure Determination of Ferroelectric SrBi2Ta2O9 with Cross-Sectional Atomic Force Microscopy (2002) (1)
- Enhanced Hot Carrier Effects In Scaled Flash Memory Devices (1997) (1)
- Welcome from the conference co-chairs (2010) (1)
- Microstructure and physical properties of ferroelectric-gate memory capacitors with various buffer layers (2001) (1)
- Hot-electron damage-resistant Si-gate submicrometer MOSFETs with a fluorinated oxide (1989) (1)
- Improved Program Mode for Memory Array Based on Ferroelectric-Gate Field-Effect Transistor (2006) (1)
- Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications (2008) (1)
- Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration (2000) (1)
- Electrical and Physical Characterization of Ultrathin Silicon Oxynitride Gate Dielectric Films Formed by the Jet Vapor Deposition Technique (1999) (1)
- Total Ionizing Dose Radiation Effects in Al O-Gated Ultra-Thin Body In Ga As MOSFETs (2013) (1)
- Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf0.5Zr0.5O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory (2020) (0)
- Back- C hannel Hot -Elec tr on Effect Front- C hannel Character is tics Thin-Film SO1 MOSFET's (1991) (0)
- Metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si ferroelectric DRAM (FEDRAM) transistors with ultrathin SiN buffer and long retention (2001) (0)
- (Invited) Some Recent Progress in Ferroelectric Memory Technology (2020) (0)
- Electrical characterization of high-k gate dielectrics on semiconductors (2008) (0)
- Analytical Spectroscopic Ellipsometry of Ta2O5 and TiO2 for Use as High-k Gate Dielectrics (1999) (0)
- Ultra-Thin HfON Films Formed with He/FG Plasma Jet Assisted PVD Process (2006) (0)
- Isotopically Enriched (28)Si Crystals for Electronics Applications. (1993) (0)
- Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3) (2006) (0)
- Understanding the resistance switching mechanisms of binary metal oxides with the percolation model (2008) (0)
- (Plenary) Beyond-Si CMOS Technologies Based on High-Mobility Channels (2013) (0)
- Reliability improvement on HfO/sub 2/ nMOSFETs by replacing polySi gate with TaSiN gate (2005) (0)
- Structures, Pd spacer polarization and magnetic properties of Co-Nb/Pd multilayers (1997) (0)
- FEDRAM: A DRAM cell based on ferroelectric-gated field-effect transistor (2009) (0)
- Magnetic polarization of spacer Pd layer and magnetic properties of Co/Pd multilayers (1997) (0)
- Novel electrical characterization for advanced CMOS gate dielectrics (2008) (0)
- Response to ‘‘Comment on ‘Random telegraph signals arising from fast interface states in metal‐SiO2‐Si transistors’ ’’ [Appl. Phys. Lett. 63, xxxx (1993)] (1993) (0)
- Electron-Hole—Transport in Photorefractive Media (1992) (0)
- Low Voltage High Speed Programming/Erasing Charge Trapping Memory with Metal-Al2O3-SiN-Si3N4-Si Structure (2007) (0)
- Inelastic Electron Tunneling Spectroscopy Study of Ultra-Thin TiO2/Al2O3 on GaAs (2009) (0)
- Effective Capture Cross-Sections of Traps in High-k Gate Dielectrics (2007) (0)
- A charge-trapping memory structure featuring low-voltage high-speed operation and 250 °C retention (2010) (0)
- A Comparative Study of High-Field Endurance for Reoxidized-Nitrided and Fluorinated Oxides (1991) (0)
- Complementary gratings in photorefractive media owing to two-level electron-hole transport (1991) (0)
- Preparation, Microstructure and Physical Characteristics of Ferroelectric Pb 5 Ge 3 O 11 Thin Films for Memory Application (2003) (0)
- Defect Transformation Process at SiO2/Si Interfaces (1988) (0)
- Beyond-Si CMOS technologies based on high-mobility channels (2013) (0)
- Charge Collection Mechanism in AlGaN/GaN MOS High Electron Mobility Transistors. (2013) (0)
- Unipolar CMOS Logic for Thin-Film Transistor Technology (2014) (0)
- Proposed mechanism for the improvements of PZT thin films deposited by direct-current glow discharge assisted laser ablation (1997) (0)
- ROLE OF [_WLANTATION-fiNDUCED DEFECTS INSURFACE-ORIENTED DWFUSION OF FLUORINE INSILICON (2004) (0)
- Electrical Characterization of High-k Gated MOSFETs and Interfaces (2004) (0)
- Polarity dependence of charge trapping in poly-silicon gate HfO/sub 2/ MOSFETs (2004) (0)
- A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors fabricated with Hf and Zr Chlorides (2022) (0)
- High efficiency inversion layer solar cells based on ionizing radiation‐induced surface inversion (1984) (0)
- Crested Tunnel Barriers for Fast Scalable Nonvolatile Memories (2004) (0)
- Electrical Characterization of Nanoscale Transistors: Emphasis on Traps Associated with MOS Gate Stacks (2016) (0)
- Observation Of Extended-lifetime Holograms In Photorefractive Bi/sub 12/ SiO/sub 20/ At 785 nm (1990) (0)
- Comment on "Channel length dependence of random telegraph signal in sub-micron MOSFET's" [with reply] (1995) (0)
- Time-Resolved Programming Current Measurement and Modeling for nand -type Nanodot Flash Cell (2008) (0)
- Advanced tunnel dielectrics for flash memory technology (2006) (0)
- Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3(Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0.2Ga0.8As (2007) (0)
- Some Special Reliability Features Associated with Hf-based High-k Gate Dielectrics (2006) (0)
- Etching of Si Through SiO2 in CF 4 / N 2 O Plasma (1988) (0)
- Inelastic Electron Tunnelling Spectroscopy (IETS) Study of High-k Gate Dielectrics on GaAs and InGaAs (2011) (0)
- Inelastic Electron Tunneling Spectroscopy for Measuring Microscopic Bonding Structures, Impurities, and Traps (2005) (0)
- Structure and stability of alternative gate dielectrics for Si CMOS (2003) (0)
- Electrical Characterization of Advanced Gate Dielectrics for Scaled CMOS Technology (2007) (0)
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