Tsunenobu Kimoto

Tsunenobu Kimoto's AcademicInfluence.com Rankings

Tsunenobu Kimoto

Engineering

#3577

World Rank

#4679

Historical Rank

Applied Physics

#694

World Rank

#716

Historical Rank

Electrical Engineering

#814

World Rank

#882

Historical Rank

engineering Degrees

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Engineering

Tsunenobu Kimoto's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering Kyoto University

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Tsunenobu Kimoto's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (2014) (672)
Material science and device physics in SiC technology for high-voltage power devices (2015) (599)
Step-controlled epitaxial growth of SiC: High quality homoepitaxy (1997) (480)
Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy (1997) (361)
Power Conversion with SiC Devices at Extremely High Ambient Temperatures (2005) (304)
High performance of high-voltage 4H-SiC Schottky barrier diodes (1995) (207)
Performance limiting surface defects in SiC epitaxial p-n junction diodes (1999) (194)
High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face (1999) (189)
Negative-U system of carbon vacancy in 4H-SiC. (2012) (186)
Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation (2005) (174)
Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation (2007) (171)
Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination (1996) (154)
Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation (2009) (153)
Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's (1999) (152)
Step‐Controlled Epitaxial Growth of High‐Quality SiC Layers (1997) (150)
Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces (1994) (148)
Growth mechanism of 6H-SiC in step-controlled epitaxy (1993) (147)
Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons (2006) (147)
Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001} (1997) (144)
Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) (2004) (143)
Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes (2005) (130)
Generation of very fast states by nitridation of the SiO[2]/SiC interface (2012) (129)
Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition (2001) (119)
Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation (2008) (116)
Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) faces (1995) (114)
Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment (2009) (112)
Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance (2012) (103)
Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates (2010) (102)
Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition (1995) (101)
21-kV SiC BJTs With Space-Modulated Junction Termination Extension (2012) (100)
Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping (2008) (97)
Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics (2015) (95)
Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching (2000) (92)
Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers (2007) (91)
Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers (2009) (87)
Nitrogen Ion Implantation into α‐SiC Epitaxial Layers (1997) (85)
The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C (2008) (85)
Bulk and epitaxial growth of silicon carbide (2016) (83)
Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC (2012) (83)
A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) face (2001) (80)
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC (2006) (79)
High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances (1993) (77)
Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes (2008) (74)
Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC (1995) (74)
Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy (2005) (72)
Electrical activation of high-concentration aluminum implanted in 4H-SiC (2004) (72)
A 3 kV Schottky barrier diode in 4H-SiC (1998) (70)
High‐quality 4H‐SiC homoepitaxial layers grown by step‐controlled epitaxy (1994) (70)
The effects of N+ dose in implantation into 6h-sic epilayers (1995) (70)
Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers (2010) (68)
Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates (1994) (68)
Analytical model for reduction of deep levels in SiC by thermal oxidation (2012) (66)
Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors (2008) (66)
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes (2016) (66)
4H‐SiC MISFETs with nitrogen‐containing insulators (2009) (65)
Development of Ultrahigh-Voltage SiC Devices (2015) (64)
21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension (2012) (63)
Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC (2009) (63)
Aluminum and boron ion implantations into 6H-SiC epilayers (1996) (63)
Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation (2007) (63)
Defect engineering in SiC technology for high-voltage power devices (2020) (63)
Triple Shockley type stacking faults in 4H-SiC epilayers (2009) (61)
Surface diffusion lengths of adatoms on 6H‐SiC{0001} faces in chemical vapor deposition of SiC (1995) (59)
Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes (2016) (59)
Nucleation and step motion in chemical vapor deposition of SiC on 6H‐SiC{0001} faces (1994) (58)
Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (2007) (58)
Current status and perspectives of ultrahigh-voltage SiC power devices (2017) (57)
Shallow states at SiO2/4H-SiC interface on (112̄0) and (0001) faces (2002) (55)
Thermal instability effects in SiC Power MOSFETs (2012) (54)
Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces (2013) (54)
Characterization of major in-grown stacking faults in 4H-SiC epilayers (2009) (52)
4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication (2003) (51)
Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices (2015) (50)
Investigation on origin of Z[1/2] center in SiC by deep level transient spectroscopy and electron paramagnetic resonance (2013) (50)
Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence (1997) (49)
Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes (2012) (49)
Radiation-induced defect centers in 4H silicon carbide (1997) (48)
Traps at the SiC/SiO 2 -Interface (2000) (48)
High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime (2012) (48)
Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density (2007) (48)
Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation (2011) (47)
High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition (2002) (47)
Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing (2004) (47)
MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation (2000) (46)
SiC technologies for future energy electronics (2010) (46)
Impacts of growth parameters on deep levels in n-type 4H-SiC (2007) (45)
4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on ($ \hbox{000}\bar{\hbox{1}}$) (2011) (44)
A Study on SiC Devices in Synchronous Rectification of DC-DC Converter (2007) (43)
Formation of semi‐insulating 6H‐SiC layers by vanadium ion implantations (1996) (43)
Epitaxial growth of 4H–SiC on 4° off-axis (0 0 0 1) and (0 0 0 1¯) substrates by hot-wall chemical vapor deposition (2006) (43)
Understanding and reduction of degradation phenomena in SiC power devices (2017) (43)
Effects of C/Si ratio in fast epitaxial growth of 4H-SiC(0001) by vertical hot-wall chemical vapor deposition (2005) (43)
Interface Properties of 4H-SiC ( $11\bar {2}0$ ) and ( $1\bar {1}00$ ) MOS Structures Annealed in NO (2015) (42)
Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode (2002) (42)
Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC (2003) (41)
Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions (2003) (41)
Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT (2013) (40)
Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor (2002) (40)
Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in $\hbox{N}_{2}\hbox{O}$ or NO (2011) (39)
Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination (2019) (39)
Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers (2012) (38)
4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance (2007) (38)
Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition (2003) (38)
Deep levels induced by reactive ion etching in n- and p-type 4H-SiC (2010) (37)
Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC (2011) (37)
Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0) (2002) (37)
Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC (2014) (37)
High-quality nonpolar 4H-AlN grown on 4H-SiC (112¯0) substrate by molecular-beam epitaxy (2006) (36)
Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures (2012) (36)
Anisotropy in breakdown field of 4H–SiC (2002) (36)
Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes (2018) (35)
Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338) (2003) (34)
Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing (2006) (33)
Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) (2005) (33)
4H-SiC MOSFETs on (03-38) Face (2002) (32)
P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and $\hbox{N}_{2}\hbox{O}$ Annealing (2009) (32)
Negative-U carbon vacancy in 4H-SiC : Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site (2013) (32)
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face (2000) (32)
Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations (2018) (32)
Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8) (2002) (32)
Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC (2010) (32)
Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements (2014) (31)
Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates (1997) (30)
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature (2004) (30)
Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation (2017) (30)
Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H–SiC epilayers (2011) (30)
Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates (2006) (30)
Promise and Challenges of High-Voltage SiC Bipolar Power Devices (2016) (29)
High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors (1999) (29)
Breakdown characteristics of 12–20 kV-class 4H-SiC PiN diodes with improved junction termination structures (2012) (28)
Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing (2016) (28)
4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 °C (2012) (27)
Engineering the band gap of SiC nanotubes with a transverse electric field (2010) (27)
Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001) (2003) (27)
Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers (2011) (27)
Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs (2005) (27)
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy (2019) (27)
Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode (2017) (27)
Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC (2012) (27)
Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers (2016) (26)
m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates (2007) (26)
Interface state density of SiO2/p-type 4H-SiC (0001), (112¯0), (11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes (2016) (26)
Silicon Carbide: Volume 2: Power Devices and Sensors (2009) (26)
1330 V, 67 m/spl Omega//spl middot/cm/sup 2/ 4H-SiC(0001) RESURF MOSFET (2005) (25)
Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap (2004) (25)
SiC JFET dc characteristics under extremely high ambient temperatures (2004) (25)
Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET (2007) (25)
4H-SiC (11-20) Epitaxial Growth (2000) (25)
Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping (2011) (25)
Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition (2004) (25)
Recent Achievements and Future Challenges in SiC Homoepitaxial Growth (2002) (25)
Impact of surface step heights of 6H–SiC (0 0 0 1) vicinal substrates in heteroepitaxial growth of 2H–AlN (2008) (24)
Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics (2012) (24)
High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers (2006) (24)
Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC (2012) (24)
Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy (2018) (24)
Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition (2001) (24)
Carbon Ejection from a SiO2/SiC(0001) Interface by Annealing in High-Purity Ar (2017) (24)
Conductivity Control of SiC by In-Situ Doping and Ion Implantation (1997) (24)
Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy (2012) (24)
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters (2005) (23)
Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications (2009) (23)
Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation (2010) (23)
Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC (2013) (23)
Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing (2014) (23)
Deposition of high‐quality a‐Si:H by direct photodecomposition of Si2H6 using vacuum ultraviolet light (1988) (22)
Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement (1999) (22)
Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth (2011) (22)
Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals (2012) (22)
Impact ionization coefficients and critical electric field in GaN (2021) (22)
Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices (2016) (22)
Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy (2013) (21)
Ion implantation technology in SiC for power device applications (2014) (21)
Temperature Dependence of Impact Ionization Coefficients in 4H-SiC (2014) (21)
Thermo-Optic Coefficients of 4H-SiC, GaN, and AlN for Ultraviolet to Infrared Regions up to 500 °C (2012) (21)
Homoepitaxial growth of 4H-SiC (0 3 3̄ 8) and nitrogen doping by chemical vapor deposition (2003) (21)
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs (2015) (20)
Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy (2007) (20)
Hall scattering factors in p-type 4H-SiC with various doping concentrations (2016) (20)
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission (2002) (20)
Single-crystalline 4H-SiC micro cantilevers with a high quality factor (2013) (19)
Epitaxial Growth of Cubic SiC Films on Si Substrates by High Vacuum Chemical Vapor Deposition Using 1,3‐Disilabutane (1997) (19)
Chemical vapor deposition and deep level analyses of 4H-SiC(112̄0) (2001) (19)
Electronic energy model for single Shockley stacking fault formation in 4H-SiC crystals (2019) (19)
Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces (2006) (19)
Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction (2019) (19)
Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices (2018) (19)
The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study (2009) (19)
Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging (2014) (18)
Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001) (2005) (18)
Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H–SiC Homoepitaxial Film (2002) (18)
Structural and electronic characterization of (2,33) bar-shaped stacking fault in 4H-SiC epitaxial layers (2011) (18)
High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes (2002) (18)
Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination (2019) (18)
Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation (2013) (18)
Ultrahigh-voltage SiC devices for future power infrastructure (2013) (18)
SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology (2006) (18)
High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate (2018) (17)
DII Revisited in an Modern Guise - 6H and 4H SiC (1997) (17)
Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n+-p junction (1997) (17)
Photoluminescence of homoepitaxial 3C-SiC on sublimation-grown 3C-SiC substrates (1995) (17)
Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate (2019) (17)
Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing (2008) (17)
SiC MISFETs with MBE-grown AlN Gate Dielectric (2000) (17)
Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure (2011) (17)
Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO (2009) (17)
Physics of SiC MOS interface and development of trench MOSFETs (2013) (16)
Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H‐SiC (2007) (16)
Specular Surface Morphology of 4H–SiC Epilayers Grown on (112̄0) Face (1999) (16)
Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors (2014) (16)
Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature (2017) (16)
Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation (2014) (16)
Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing (2017) (16)
Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy (2012) (16)
Fast Epitaxial Growth of 4H–SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition (2001) (16)
Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides (2010) (16)
High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers (1997) (16)
Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing (2019) (15)
Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process (2015) (15)
Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates (2017) (15)
Deep levels in 6H‐SiC wafers and step‐controlled epitaxial layers (1994) (15)
Oxygen in silicon carbide : shallow donors and deep acceptors (1999) (15)
Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes (1995) (15)
Interface States of SiO2/SiC on (11-20) and (0001) Si Faces (2001) (15)
High-Voltage 4H–SiC Schottky Barrier Diodes Fabricated on (033̄8) with Closed Micropipes (2003) (15)
Effects of surface defects on the performance of 4H– and 6H–SiC pn junction diodes (1999) (15)
Estimation of Threshold Voltage in SiC Short-Channel MOSFETs (2018) (15)
Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes (1997) (15)
Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation (2020) (15)
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation (2021) (15)
4H-SiC MIS Capacitors and MISFETs With Deposited $\hbox{SiN}_{x}/ \hbox{SiO}_{2}$ Stack-Gate Structures (2008) (15)
Demonstration of 3 kV 4H-SiC reverse blocking MOSFET (2016) (14)
Physical Properties of Silicon Carbide (2014) (14)
Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC (2018) (14)
Enhancement of initial layer‐by‐layer growth and reduction of threading dislocation density by optimized Ga pre‐irradiation in molecular‐beam epitaxy of 2H‐AlN on 6H‐SiC(0001) (2010) (14)
Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage (2018) (14)
Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique (2017) (14)
The Development of 4H-SiC {03-38} Wafers (2002) (14)
Impact ionization coefficients of 4H-SiC in a wide temperature range (2018) (14)
High‐voltage 4H‐SiC pn diodes fabricated by p‐type ion implantation (2003) (14)
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD (1997) (14)
4H-SiC bipolar junction transistors with record current gains of 257 on (0001) and 335 on (000–1) (2011) (13)
SiC Epitaxy on Non-Standard Surfaces (2003) (13)
Progress and future challenges of SiC power devices and process technology (2017) (13)
Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces (2020) (13)
Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy (2018) (13)
Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing (2016) (13)
Control of carbon vacancy in SiC toward ultrahigh-voltage power devices (2016) (13)
High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch (2017) (13)
Direct determination of Burgers vector sense and magnitude of elementary dislocations by synchrotron white x-ray topography (2008) (13)
Detection of minority carrier traps in p-type 4H-SiC (2014) (13)
Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes (2020) (13)
Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC (2010) (13)
Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center (1993) (13)
Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps (2014) (13)
Deep Interface States in SiO 2/p-type α-SiC Structure (1997) (13)
Oxygen-Related Defect Centers in 4H Silicon Carbide (1997) (13)
Stress Characterization of 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method (2016) (12)
Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum (2007) (12)
Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation (2007) (12)
Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors (2009) (12)
27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control (2018) (12)
Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes (2019) (12)
Defect Control in Growth and Processing of 4H-SiC for Power Device Applications (2010) (12)
Characterization of silicon dioxide films on 4H-SiC (0001) Si, (1-100) M, and (11-20) A faces by cathodoluminescence spectroscopy (2013) (12)
A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy (2007) (12)
Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells (2017) (12)
Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT (2014) (12)
Silicon Carbide Epitaxy (2015) (12)
STEP-CONTROLLED EPITAXY OF SIC: HIGH-QUALITY HOMOEPITAXIAL GROWTH (1998) (12)
Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering (2012) (12)
Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface (2010) (11)
TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors (2017) (11)
Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics (2006) (11)
Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor (2005) (11)
Characterization of traps in SiC/SiO2 interfaces close to the conduction band by deep-level transient spectroscopy (2014) (11)
Selective homoepitaxy of 4H-SiC on (0 0 0 1) and (1 1 2 0) masked substrates (2002) (11)
Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD (2003) (11)
Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing (2020) (11)
Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory (2011) (11)
Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons (2010) (10)
Device Processing of Silicon Carbide (2014) (10)
Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells (2013) (10)
Temperature dependence of optical absorption coefficient of 4H- and 6H-SiC from room temperature to 300 °C (2014) (10)
Nuclear Transmutation Doping of Phosphorus into 6H-SiC (2000) (10)
Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process (2012) (10)
Molecular‐beam epitaxy of AlN on off‐oriented SiC and demonstration of MISFET using AlN/SiC interface (2005) (10)
1580-V–40-m Ω · cm 2 Double-RESURF MOSFETs on 4H-SiC ( 000 ¯ 1 ) (2018) (10)
Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation (2002) (10)
Optical cross sections of deep levels in 4H-SiC (2006) (10)
Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure (2018) (10)
Interface properties of NO-annealed 4H-SiC (0001), ( 11 2 ¯ 0), and ( 1 1 ¯ 00) MOS structures with heavily doped p-bodies (2017) (10)
High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface (2008) (10)
Passivation of Surface Recombination at the Si-Face of 4H-SiC by Acidic Solutions (2018) (10)
Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories (2016) (10)
Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals (2012) (9)
4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC $(11\bar{2}0)$ (2014) (9)
Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure (2009) (9)
E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy (2013) (9)
Ion implantation technology in SiC for high-voltage/high-temperature devices (2016) (9)
Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers (2003) (9)
Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition (2004) (9)
Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM cells (2020) (9)
Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H–SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy (2013) (9)
1580-V-40-m Omega . cm(2) Double-RESURF MOSFETs on 4H-SiC (000(1)over-bar) (2009) (9)
Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer (2018) (9)
Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET (2017) (9)
Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy (1991) (9)
Dominant conduction mechanism in NiO-based resistive memories (2015) (9)
Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001) (2013) (9)
Special Issue on Silicon Carbide Devices and Technology (2008) (9)
Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer (2016) (9)
Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure (2002) (9)
Nonpolar 4H-AlN grown on 4H-SiC (11¯00) with reduced stacking fault density realized by persistent layer-by-layer growth (2008) (9)
Progress in ultrahigh-voltage SiC devices for future power infrastructure (2014) (9)
Step-Controlled Epitaxial Growth of α-Sic and Device Applications (1996) (9)
Impact of III/V ratio on polytype and crystalline quality of AlN grown on 4H-SiC (110) substrate by molecular-beam epitaxy (2006) (8)
Characterization of Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layers by High-Resolution Transmission Electron Microscopy (2013) (8)
Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films (2004) (8)
Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing (2007) (8)
Appendix C: Major Physical Properties of Common SiC Polytypes (2014) (8)
Conductance fluctuation in NiO-based resistive switching memory (2018) (8)
Design Criterion for SiC BJTs to Avoid ON-Characteristics Degradation Due to Base Spreading Resistance (2017) (8)
Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth (2006) (8)
Short-Channel Effects in 4H-SiC MOSFETs (2005) (8)
Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC (2017) (8)
4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles (2005) (8)
Decay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers (2014) (8)
Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy (2006) (8)
Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes (2009) (8)
Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy (2007) (8)
N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes (2008) (8)
Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs (2013) (8)
Improved Performance of 4H-SiC Double Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors by Increasing RESURF Doses (2008) (8)
Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy (2011) (8)
High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition (2002) (8)
High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient (2004) (8)
Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ? (2012) (8)
Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC (2015) (8)
Bandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations (2011) (8)
Demonstration of Common–Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors (2010) (8)
Technological Aspects of Ion Implantation in SiC Device Processes (2005) (8)
Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations (2011) (7)
Temperature dependence of forward characteristics for ultrahigh-voltage SiC p–i–n diodes with a long carrier lifetime (2015) (7)
High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena (2008) (7)
Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers (2015) (7)
Fast epitaxial growth of high-purity 4H-SiC( $$000\bar 1$$ ) in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition (2005) (7)
Homoepitaxial mesa structures on 4H–SiC (0 0 0 1) and (1 1 2̄ 0) substrates by chemical vapor deposition (2003) (7)
Origin of Etch Hillocks Formed on On-Axis SiC(0001) Surfaces by Molten KOH Etching (2011) (7)
Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(0001̄) Substrate by Molecular-Beam Epitaxy (2011) (7)
Optical Properties of Silicon Carbide: Some Recent Developments (1997) (7)
Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(112¯0) (2018) (7)
Mechanism of stabilization of zincblende GaN on hexagonal substrates : Insight gained from growth on ZrB2 (0001) (2005) (7)
Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping (2010) (7)
Determination of Surface Recombination Velocity From Current–Voltage Characteristics in SiC p-n Diodes (2018) (7)
Electronic properties of finite‐length silicon carbide nanotubes (2009) (7)
Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy (2016) (7)
Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy (2017) (7)
Temperature dependence of current gain in 4H-SiC bipolar junction transistors (2014) (7)
Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors (2019) (7)
Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy (1997) (7)
Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes (2003) (7)
Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes (2005) (7)
Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model (2012) (7)
Rate-determining process in chemical vapor deposition of SiC on off-axis α -SiC ( 0 0 0 1 ) (2004) (7)
Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces (2020) (7)
Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain (2018) (7)
Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD (2005) (6)
Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime (2013) (6)
Phonon-assisted optical absorption due to Franz–Keldysh effect in 4H-SiC p–n junction diode under high reverse bias voltage (2018) (6)
Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces (2004) (6)
Recent Progress in SiC Epitaxial Growth and Device Processing Technology (2001) (6)
Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility (2014) (6)
Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device (2007) (6)
In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face (2009) (6)
Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors (2006) (6)
Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps (2003) (6)
Source of Surface Morphological Defects Formed on 4H–SiC Homoepitaxial Films (2006) (6)
Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100) (2010) (6)
Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO (2011) (6)
Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures (2021) (6)
Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature (2011) (6)
Theoretical study of Cl-related defect complexes in cubic SiC (2012) (6)
Four Current Examples of Characterization of Silicon Carbide (2002) (6)
Deep-ultraviolet micro-Raman investigation of surface defects in a 4H–SiC homoepitaxially grown film (2005) (6)
Observation of novel defect structure in 2H‐AlN grown on 6H‐SiC(0001) substrates with 3‐bilayer‐height step‐and‐terrace structures (2009) (6)
Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures (2008) (6)
Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy (2004) (6)
Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD (2002) (6)
Enhanced Performance of 50 nm Ultra-Narrow-Body Silicon Carbide MOSFETs based on FinFET effect (2020) (6)
Ab initio prediction of SiC nanotubes with negative strain energy (2014) (5)
Design and Fabrication of RESURF MOSFETs on (2005) (5)
Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC (2010) (5)
Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires (2014) (5)
Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC (2020) (5)
Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy (2006) (5)
Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates (2005) (5)
Progress and future challenges of silicon carbide devices for integrated circuits (2014) (5)
Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC (2002) (5)
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage (2006) (5)
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs (2010) (5)
Effects of TiO2 crystallinity and oxygen composition on forming characteristics in Pt/TiO2/Pt resistive switching cells (2018) (5)
Lateral spreads of ion-implanted Al and P atoms in silicon carbide (2021) (5)
High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC (2008) (5)
Surface Morphologies of 4H-SiC(1120) and (1100) Treated by High-Temperature Gas Etching (2008) (5)
Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching (2011) (5)
Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices (2011) (5)
Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices (2013) (5)
Systematic Investigation of c-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates (2009) (5)
Optimization and Comparison of Power Devices (2014) (5)
Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors With Reduced Base Spreading Resistance (2019) (5)
Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition (2003) (5)
Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing (2005) (5)
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing (2021) (5)
Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) (2002) (5)
Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations (2018) (5)
Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation (2007) (5)
Ab initio study of isolated chlorine defects in cubic SiC (2011) (5)
P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing (2020) (5)
Anisotropic etching of single crystalline SiC using molten KOH for SiC bulk micromachining (2006) (5)
Robust 4H–SiC pn Diodes Fabricated using (112̄0) Face (2004) (5)
Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC (2012) (5)
Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor (2007) (4)
Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC (2010) (4)
New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC (2010) (4)
Bulk Growth of Silicon Carbide (2014) (4)
Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes (2012) (4)
Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current (2021) (4)
Anomalously low Ga incorporation in high Al‐content AlGaN grown on $(11{\bar {2}}0)$ non‐polar plane by molecular beam epitaxy (2011) (4)
High-voltage SiC power devices for improved energy efficiency (2022) (4)
Dose Designing and Fabrication of 4H-SiC Double RESURF MOSFETs (2006) (4)
Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy (2014) (4)
A study on electro thermal response of SiC power module during high temperature operation (2008) (4)
Epitaxial Growth and Device Processing of SiC on Non-Basal Planes (2004) (4)
4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose (2008) (4)
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation (2002) (4)
Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction (2009) (4)
Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC (2014) (4)
Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient (2001) (4)
4H‐SiC/6H‐SiC interface structures studied by high‐resolution transmission electron microscopy (1993) (4)
AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter (2013) (4)
Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate (2007) (4)
Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC (2001) (4)
Reduction of threading dislocations in nonpolar 4H-AlN on 4H-SiC (110) grown by molecular-beam epitaxy with slightly Al-rich conditions (2007) (4)
Effect of Postoxidation Nitridation on Forward Current–Voltage Characteristics in 4H–SiC Mesa p-n Diodes Passivated With SiO2 (2017) (4)
Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires (2014) (4)
MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N 2 O Oxidation (2004) (4)
Impact of conduction type and doping density on thermal oxidation rate of SiC(0001) (2014) (4)
Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures (2011) (4)
Bulk crystal growth of 6H-SiC on polytype-controlled substrates through vapor phase and characterization (1991) (4)
MOS interface properties and MOSFET performance on 4H-SiC{0001} and (11-20) processed by N/sub 2/O oxidation (2004) (4)
On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps (2012) (4)
Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires (2016) (4)
Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition (2002) (4)
High-temperature surface structure transitions and growth of α-SiC (0001) in ultrahigh vacuum (1999) (4)
Evidence for a hydrogen-related defect in implanted p-type 4H-SiC (2008) (4)
Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation (2017) (4)
Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics (2000) (4)
Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems (2020) (4)
Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition (2006) (4)
A study of SiC Power BJT performance and robustness (2011) (4)
4H-SiC MOSFETs on (03(3)over-bar8) face (2002) (3)
Tunneling Current in 4H-SiC p-n Junction Diodes (2020) (3)
Analysis of carrier lifetimes in n-type 4H-SiC by rate equations (2019) (3)
Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001) (2017) (3)
Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature (2021) (3)
Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors (2020) (3)
Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method (1992) (3)
Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions (2009) (3)
Structure Analysis of ZrB2(0001) Surface Prepared by ex situ HF Treatment (2006) (3)
Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors (2020) (3)
Dominant conduction mechanism in TaOx-based resistive switching devices (2019) (3)
XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation (2007) (3)
Unipolar Power Switching Devices (2014) (3)
Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires (2014) (3)
Solubility and diffusion of chromium in 4H-SiC (2016) (3)
A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching (2009) (3)
A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors (2018) (3)
Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect (2019) (3)
Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces (2000) (3)
SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation (2019) (3)
Single versus double ion implantation: a deep level study (2009) (3)
Hydrogen Implantation and Annealing-Induced Exfoliation Process in SiC Wafers with Various Crystal Orientations (2008) (3)
AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy (2011) (3)
Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates (1997) (3)
Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers (2010) (3)
Thermal stability of deep levels between room temperature and 1500 °C in as-grown 3C-SiC (2009) (3)
Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations (2020) (3)
Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC (2013) (3)
Epitaxial growth of 4H–SiC{0001} and reduction of deep levels (2006) (3)
Growth of high-quality non-polar AlN on 4H-SiC(11–20) substrate by molecular-beam epitaxy (2003) (3)
Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model (2016) (3)
Impacts of Finger Numbers on ON-State Characteristics in Multifinger SiC BJTs With Low Base Spreading Resistance (2018) (3)
Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the 〈11 2 ¯ 0〉 direction (2019) (3)
Progress in High and Ultrahigh Voltage Silicon Carbide Device Technology (2018) (3)
Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET (2020) (3)
Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition (2004) (3)
Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering (2020) (3)
High-Sensitivity Analysis of Z1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition (2002) (3)
SiC Schottky Barrier Diodes with High Blocking Voltage of 1kV (1993) (3)
Deep Interface States in SiO2/p-type .ALPHA.-SiC Structure. (1997) (3)
Thermal stability of defects in p-type as-grown 6H-SiC (2007) (3)
Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation (2017) (3)
Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications (2011) (3)
Design and Fabrication of SiC RESURF MOSFETs (2001) (3)
4H-SiC MIS Capacitors and MISFETs With Deposited SiNx/SiO2 Stack-Gate Structures (2018) (3)
Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy (2013) (3)
Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS (2005) (2)
Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD (2006) (2)
Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers (2000) (2)
Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires (2018) (2)
1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face (2009) (2)
Applications of Silicon Carbide Devices in Power Systems (2014) (2)
Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices (2010) (2)
Laplace Transform Deep Level Transient Spectroscopy Study of the EH6/7 Center (2013) (2)
Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC (2011) (2)
Progress and Challenge in High to Ultra-High Voltage SiC Power Devices (2017) (2)
Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face (2000) (2)
High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face (2004) (2)
Unipolar and Bipolar Power Diodes (2014) (2)
Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE (2016) (2)
Impact of the Oxygen Amount of an Oxide Layer and Post Annealing on Forming Voltage and Initial Resistance of NiO-based Resistive Switching Cells (2013) (2)
Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors (2010) (2)
Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes (2006) (2)
Ultrahigh voltage SiC bipolar devices (2013) (2)
Sub-μm Scale Photoluminescence Image of SiC and GaN at a Low Temperature (2000) (2)
High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer (2009) (2)
Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies (2018) (2)
Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes (2008) (2)
8. Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors (2011) (2)
Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE (2020) (2)
Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation (2017) (2)
Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy (2005) (2)
Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers (2010) (2)
Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy (2021) (2)
First-principles study of Cl diffusion in cubic SiC (2013) (2)
Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons (2010) (2)
Determination of the thermo‐optic coefficients of GaN and AlN up to 515 °C (2009) (2)
Influence of vacuum annealing on interface properties of SiC (0001) MOS structures (2019) (2)
Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas (2013) (2)
Impacts of surface roughness scattering on hole mobility in germanium nanowires (2015) (2)
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate (2010) (2)
Appendix A: Incomplete Dopant Ionization in 4H‐SiC (2014) (2)
Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process (2022) (2)
Epitaxial Growth and Defect Control of SiC for High-Voltage Power Devices (2011) (2)
Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching (2009) (2)
SiC material properties (2019) (2)
1200 V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances (2005) (2)
Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs (2020) (2)
Spin transport in n-type 3C–SiC observed in a lateral spin-pumping device (2020) (2)
Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping (2009) (2)
Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates (2013) (2)
ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC (2016) (2)
The Effects of Transverse Electric Fields on the Electronic Properties of SiC Nanostructures (2012) (2)
Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC (2009) (2)
High-Purity and Thick 4H– and 6H–SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes (2001) (2)
Quantitative comparison between Z ( 1 / 2 ) center and carbon vacancy in 4 H-SiC (2014) (2)
Development of ultrahigh voltage SiC power devices (2014) (2)
Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask (2005) (2)
Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition (2005) (2)
Theoretical analysis of quasi-ballistic hole transport in Ge and Si nanowires focusing on energy relaxation process (2017) (1)
Formation of Deep pn Junctions by High-Energy Al and B Ion Implantations into SiC (2002) (1)
Conduction-type dependence of thermal oxidation rate on SiC(0001) (2014) (1)
Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes With Various Doping Concentrations (2022) (1)
Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001) (2004) (1)
Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (2011) (1)
Influence of Substrate Misorientation Angle and Direction in Growth of GaN on Off-axis SiC (0001) (2004) (1)
Nucleation and Step Dynamics in SIC Epitaxial Growth (1994) (1)
High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N2O Annealing (2005) (1)
MOS Structures Annealed in NO (2015) (1)
Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes (2012) (1)
Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN (2003) (1)
4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching (2002) (1)
Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities (2015) (1)
Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs (2006) (1)
In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy (2000) (1)
Hetero-Interface Properties of SiO~2/4H-SiC on Various Crystal Orientations (2003) (1)
Temperature Dependence of Electrical Properties of NiO Thin Films for Resistive Random Access Memory (2008) (1)
Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure (2007) (1)
Orientation and size effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires (2014) (1)
Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs (2014) (1)
SiO 2 /SiC Interface Properties on Various Surface Orientations (2002) (1)
Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition (2002) (1)
4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET) (2004) (1)
Complementary junction field-effect transistor logic gate operational at 300$^\circ$C with 1.4 V supply voltage (2021) (1)
Body doping dependence of field-effect mobility in both n- and p-channel 4H-SiC metal-oxide-semiconductor field-effect transistors with nitrided gate oxides (2022) (1)
SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter (2010) (1)
Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates (2002) (1)
Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films (2006) (1)
Electrically Active Defects in Electron Irradiated P-Type 6H-SiC (2011) (1)
Epitaxial growth of 4H–SiC(033̄8) and control of MOS interface (2003) (1)
Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD (2003) (1)
Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation (2017) (1)
Measurement of Electron and Hole Impact Ionization Coefficients in GaN (2020) (1)
Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38) (2002) (1)
Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation (2018) (1)
Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers (2015) (1)
9. High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen (2011) (1)
Determination of Phase Diagram of Electron-Hole Systems in 4H-SiC (2013) (1)
Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates (2022) (1)
Step-controlled epitaxial growth of SiC and its conductivity control (1998) (1)
High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers (2003) (1)
Integrated Simulation Solution for Advanced Power Devices (2011) (1)
Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching (2014) (1)
Chlorine in SiC: Experiment and Theory (2012) (1)
Characterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy (2015) (1)
Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face (2004) (1)
Fabrication and Performance of 16-kV Ultrahigh-Voltage SiC Power Devices (2014) (1)
Erratum to "Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition". [J. Crystal Growth 306 (2007) 297] (2007) (1)
Characterization Techniques and Defects in Silicon Carbide (2014) (1)
Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells (2019) (1)
Time-Dependent Forming Characteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory (2012) (1)
Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition (2004) (1)
Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals (2013) (1)
Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC (2012) (1)
Defect Formation in (0001)- and (112̄0)-Oriented 4H-SiC Crystals P+-Implanted at Room Temperature (2004) (1)
Microscopic mechanism of carbon annihilation upon SiC oxidation due to phosphorus treatment: Density functional calculations combined with ion mass spectrometry (2017) (1)
Crystal growth of SiC II. Epitaxial growth (2001) (1)
Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC (2010) (1)
Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers (2011) (1)
Schottky barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000(1)over-bar), (1(1)over-bar-00) and (1(2)over-bar-10) faces measured by I-V, C-V and internal photoemission (2002) (1)
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy (2000) (1)
Junction technology in SiC for high-voltage power devices (2013) (1)
Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN (2020) (1)
Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors (2022) (0)
Issues with Deep Defect Spectra in Electron Irradiated 4H SiC (2009) (0)
Single crystal growth of 3C-SiC on 15R-SiC (1999) (0)
Electron-spin-resonance study on nitrided MOS interfaces of epitaxial 4H-SiC substrates (2016) (0)
Temperature dependence of Avalanche multiplication in GaN p-n junction diodes measured by using the light absorption due to Franz-Keldysh effect (2018) (0)
Title Effects of TiO 2 crystallinity and oxygen composition onforming characteristics in Pt / TiO 2 / Pt resistive switching cells (2019) (0)
Characterization of lateral spread of implanted ions in a SiC substrate by scanning electron microscopy and scanning capacitance microscopy (2020) (0)
Point Defects in SiC from a Perspective of Power Device Application (2016) (0)
[Young Scientist Presentation Award Speech] Measurement of avalanche multiplication in GaN p-n junction diode using sub-bandgap optical absorption due to Franz-Keldysh effect (2018) (0)
Demonstration of SiC heterojunction bipolar transistors with AlN/GaN short-period superlattice widegap emitter (2009) (0)
Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations (2014) (0)
The “P bC ” dangling-bond center at 4H-SiC(0001)/SiO 2 interfaces studied by electron-spin-resonance (ESR) spectroscopy (2018) (0)
Epitaxial growth of β-SiC on α-SiC substrates by chemical vapor deposition (1992) (0)
Thin Film Technology for SiC Power Devices (2019) (0)
The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC (2011) (0)
Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation (2023) (0)
Universal mobility of electrons in SiC(0001)/SiO 2 systems with phosphorus treatment (2020) (0)
Oxygen composition and thickness dependences of electrical characteristics in Ta 2 O 5 -based ReRAM (2018) (0)
A method of growing a thin film of diamond or c-BN (1991) (0)
Recent Progress in Epitaxial Growth of SiC for Power Devices (2003) (0)
Interface states of SiO2/SiC on (11(2)over-bar-0) and (0001) Si faces (2000) (0)
The development of 4H-SiC {03(3)over-bar8) wafers (2002) (0)
Title Enhanced Drain Current of 4 H-SiC MOSFETs by Adopting aThree-Dimensional Gate Structure (2018) (0)
Analysis of high-field hole transport in Si and Ge nanowires (2016) (0)
Non-destructive Detection and Visualization of Extended Defects in 4H-SiC Epilayers (2010) (0)
Energy Distribution Measurements of Silicon Field Emitter Arrays with a Hemispherical Energy Analyzer (2008) (0)
Impact of deep-level traps on depth profiling of homoepitaxial lightly-doped n-type GaN (2016) (0)
Crystallinity of transition metal oxides on Pt or TiN bottom electrodes and resistive switching characteristics (2019) (0)
High-Temperature Operation of Electrostatically-Excited Single-Crystalline 4H-SiC Microcantilever Resonators (2015) (0)
Identification of the Location of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells and Investigation on Their Properties (2012) (0)
RHEED Oscillations during N* Irradiation in MBE Growth of AlN with Alternative Source Supply Sequence (2017) (0)
Dispositif a semi-conducteurs de compose et son procede de fabrication (2006) (0)
Title Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H‒SiC epilayers (2018) (0)
Dislocations in SiC from a Perspective of Power Device Application (2017) (0)
Size and geometric effects on conduction band structure of GaAs nanowires (2013) (0)
Shape and Size Effects on Electron Mobility (2013) (0)
Theoretical Analysis of Donor Density Dependence of Carrier Lifetimes in SiC and Comparison with Experiment (2018) (0)
Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates (2002) (0)
Bipolar Power Switching Devices (2014) (0)
Impacts of energy relaxation rates on quasi-ballistic hole transport capability in Ge and Si nanowires (2016) (0)
Surface recombination velocity for the a-face of 4H-SiC (2017) (0)
Title Deep levels induced by reactive ion etching in n- and p-type 4H-SiC (2018) (0)
Specialized Silicon Carbide Devices and Applications (2014) (0)
Electron paramagnetic resonance studies of carbon interstitial related defects in 4H-SiC (2015) (0)
Performance Improvement and Reliability Physics in SiC MOSFETs (2022) (0)
[INVITED] Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode (2019) (0)
Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition (2003) (0)
Design criterion for SiC BJTs to avoid negative effects of base spreading resistance on on-characteristics (2017) (0)
400°C operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate (2018) (0)
SiC SEMICONDUCTOR WAFER, SiC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN SiC SEMICONDUCTOR WAFER (2000) (0)
Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication (2005) (0)
The appearance of quantum point contact in Pt/NiO/Pt stack structures (2016) (0)
Theoretical Analysis of Carrier Lifetimes in p-type SiC (2019) (0)
Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations (2022) (0)
High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces (2009) (0)
Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0) (2002) (0)
Growth and Electrical Characterization of 4H-SiC Epilayers (2007) (0)
Impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO2 followed by POCl3 annealing (2016) (0)
SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth (2003) (0)
Characterization of hole traps in n-type GaN homoepitaxial layers by MCTS using sub-bandgap light excitation (2017) (0)
Characterization of lateral channeling from threshold voltages of SiC side-gate JFETs fabricated by ion implantation (2020) (0)
Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces (2023) (0)
Fabrication of normally-off n-JFETs and p-JFETs on a semi-insulating SiC substrate by ion implantation (2018) (0)
Spin-pump-induced spin transport in n-type 3C-SiC (2018) (0)
Characterization of a Shockley-Read-Hall lifetime in homoepitaxial p-GaN based on the analysis of the recombination current in GaN p-n junction diodes (2018) (0)
Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations (2019) (0)
Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs (2014) (0)
Progress and Challenges in SiC MOS Interface toward SiC Power Devices (2015) (0)
Title Investigation on origin of Z[1/2] center in SiC by deep level transient spectroscopy and electron paramagnetic resonance (2020) (0)
High electron mobility along the c-axis in 4H-SiC (2020) (0)
In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy (2000) (0)
Experimental study on short channel effects in SiC MOSFETs (2017) (0)
Electron-spin-resonance observations on dry-oxide, nitrided, and POCl 3 -annealed 4H-SiC/SiO 2 interfaces (2017) (0)
P-SiC semiconductor (2009) (0)
Characterization of Hole Trap Occupancy Ratio under Sub-bandgap Light Irradiation for Accurate Evaluation of Hole Trap Concentration in n-Type GaN (2018) (0)
Dependence of interface-state-density distribution on doping concentration of p-body in SiC MOSFETs (2019) (0)
Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices (2000) (0)
Lateral satellite peaks originating from confined misfit dislocations in HRXRD study of AlN layer grown on step-height-controlled SiC substrates (2016) (0)
Title A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face (2018) (0)
Methods of controlling operation modes in Pt/TaO x /Ta2O5/Pt resistive switching cells (2022) (0)
Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC (2021) (0)
Deep States in SiO2/p-Type 4H-SiC Interface (1997) (0)
Improved V th stability of SiC MOSFET by post-nitridation CO 2 annealing (2019) (0)
Correlation between NiO crystallinity and forming characteristics in Pt/NiO/Pt stacks (2017) (0)
Consideration of oxide removal process in electrochemical etching of p-SiC (2016) (0)
Theoretical analysis of high-field hole transport in germanium and silicon nanowires (2016) (0)
Analysis of breakdown phenomena in 4H-SiC p-n junction diodes with a wide range of doping concentration (2017) (0)
Fabrication and Electronic Characteristics of Silicon Nanowire MOSFETs (2008) (0)
Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC (2023) (0)
Ion Implantation into SiC and Device Applications (2019) (0)
High Selectivity in SiC/SiO 2 Etching by ICP-RIE in a SF 6 -O 2 -Ar Chemistry (2016) (0)
Ballistic and Quasi-ballistic Hole Transport Properties in Germanium Nanowire pMOSFETs Based on an Extended "Top of the Barrier" Model (2015) (0)
Wide-bandgap Semiconductor Devices using Group-III Nitride/SiC Heterointerface (2010) (0)
Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation (2011) (0)
Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge (2014) (0)
High-quality Epitaxial Growth of SiC and State-of-the-art Device Development (1999) (0)
Rate Determining Process and Loading Effects in Si Etching with HCl Gas (2012) (0)
A method for pulling SiC single crystals and sic-einkristall (2005) (0)
Characterization of deep levels in 4H-SiC epilayers by Optical Capacitance Transient Spectroscopy(O-CTS) (2004) (0)
Energy model for expansion/contraction of single Shockley stacking faults in 4H-SiC (2017) (0)
Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface (2003) (0)
Appendix B: Properties of the Hyperbolic Functions (2014) (0)
Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires (2010) (0)
[Young Scientist Presentation Award Speech] Forward Thermionic Field Emission Current and Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes (2019) (0)
A Model for Double Positioning Twin Formation in Cubic SiC on Noncubic SiC Substrates (1992) (0)
Title The effects of displacement threshold irradiation energy ondeep levels in p-type 6 H-SiC (2019) (0)
Estimation of interface state density in SiC MOS structures from gate characteristics of MOSFETs at room temperature (2018) (0)
[JSAP Young Scientist Award Speech] Correlation between shapes of Shockley stacking faults and structure of basal plane dislocations in 4H-SiC epilayers (2017) (0)
Epitaxial Growth of Cubic SiC Films on Si Substrates by High Vacuum Chemical Vapor Deposition Using 1,3‐Disilabutane. (1997) (0)
Low-dislocation-density Nonpolar AlN Grown on 4H-SiC (11-20) Substrates (2006) (0)
Surface Step Structures of SiC Epitaxial Layers Grown on Off-axis SiC (0001) (2001) (0)
Sub-bandgap optical absorption due to Franz-Keldysh effect in GaN p-n junction diodes (2017) (0)
Epitaxial Growth of Silicon Carbide (2014) (0)
Microscopic Mechanism of Reduction in Carbon-Related Defects at a SiC/SiO 2 Interface Due to Phosphorus Treatment (2019) (0)
Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure (2009) (0)
Development of Contact Materials for Semiconductor Devices. Silicon Carbide Semiconductors, Devices, and Contact Materials. (1994) (0)
Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission (2002) (0)
400℃ operation of SiC n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating substrate (2017) (0)
Quick measurement method for carbon-related defect density in n-type GaN layer by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy (2019) (0)
Hole trap occupancy ratio in homoepitaxial n-type GaN under sub-bandgap light irradiation (2018) (0)
Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Annealed at High Temperature or Thermally Oxidized (2019) (0)
Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications (2020) (0)
Phonon-assisted optical absorption induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under electric field along direction (2019) (0)
Shallow states at SiO 2 Õ 4 H-SiC interface on „ 11 2̄ 0 ... and „ 0001 ... faces (2020) (0)
Dependence of channel mobility on doping concentration of p-body in POCl 3 -annealed SiC MOSFETs (2019) (0)
Analyses of interface-type resistive switching phenomena in Ti/Pr_{0.7}Ca_{0.3}MnO_x/Pt cells (2019) (0)
Electrical properties of sulfur donors characterized by Hall effect measurements of sulfur-implanted n-type SiC (2021) (0)
Diffusion Study of Chlorine in SiC by First Principles Calculations (2013) (0)
Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs (2012) (0)
Theoretical Analysis of Carrier Lifetimes in SiC by using Rate Equations (2018) (0)
Chemical vapor deposition and deep level analyses of 4 H-SiC „ 11 2̄ 0 ... (2018) (0)
Investigations on Electrical Characteristics of 1-kV pnp SiC BJTs Compared with npn SiC BJT (2017) (0)
Invited) Progress in Process Technologies for SiC Power Devices (2016) (0)
Deep interface states at nitrogen-passivated SiO 2 /SiC by photo-assisted C-V measurements (2019) (0)
Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence (2014) (0)
Temperature dependence of barrier height in Ni/n-GaN vertical Schottky barrier diode (2017) (0)
Generation of etch pits in electrochemical etching of p-type SiC (2016) (0)
Driving force of reset operation in Pt/NiO/Pt stack cells (2017) (0)
Characterization of Thermal Oxides on 4H Silicon Carbide (4H-SiC) Epitaxial Substrate Using Fourier Transform Infrared Spectroscopy. (2015) (0)
Shunt current in 4H-SiC mesa pn diodes caused by post-oxidation nitridation of SiO 2 passivation (2016) (0)
SiO2 Deposition by Photo-initiation (1986) (0)
Novel Semiconductor Material for Advanced Low-Loss Power Devices (2007) (0)
Influence of interface states on short channel effects in SiC MOSFETs (2018) (0)
Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy (2021) (0)
Resistance Increase in Forming Process in Pt/TiO 2 /Pt Cells (2017) (0)
Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate (2020) (0)
Electrical characteristics of Pt/TiO 2 /Pt using TiO 2 with various crystallinities (2018) (0)
Electrical Characteristics of 21-kV SiC BJTs with Space-Modulated Junction Termination Extension (2013) (0)
Deep levels generated by RIE in n-type GaN layer (2020) (0)
Title Simulation and experimental study on the junction terminationstructure for high-voltage 4 H-SiC PiN diodes (2016) (0)
Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (11 20), and 6H-SiC(0001) (2019) (0)
Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons (2010) (0)
Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC (2007) (0)
A method for manufacturing a semiconductor device having a trench in a silicon carbide semiconductor substrate (2005) (0)
Diffusion and Gettering of Transition Metals in 4H-SiC (2012) (0)
Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC (2006) (0)
Analog resistive switching between two types of bipolar resistive switching in Pt/TaO x /Ta 2 O 5 /Pt cells (2019) (0)
(Invited) Physical Understanding and Prevention of Bipolar Degradation in SiC Power Devices (2022) (0)
Effects of oxidation/anneal atmosphere on SiC MOS interface and MOSFETs (1999) (0)
Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy (2003) (0)
Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) (2003) (0)
Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC (2008) (0)
A Studyon SiC Devices inSynchronous Rectification ofDC-DC Converter (2007) (0)
The silicon carbide semiconductor device (2003) (0)
4H-SiC (11(2)over-bar-0) epitaxial growth (2000) (0)
Molecular beam epitaxy of GaN on lattice-matched ZrB 2 substrates using low-temperature GaN and AlN nucleation layers (2004) (0)
Estimation of interface state density in heavily-doped SiC MOS structures from gate characteristics of MOSFETs (2018) (0)
Mobility degradation under a high effective normal field in an inversion layer of 4H-SiC (0001) metal–oxide–semiconductor structures annealed in POCl3 (2022) (0)
Characterization of hole traps in n-type GaN homoepitaxial layers by optical isothermal capacitance transient spectroscopy considering thermal distribution of electrons at the edge of the depletion layer (2017) (0)
Either step-flow or layer-by-layer growth for AlN on SiC (0001) substrates (2003) (0)
High-Voltage SiC Power Devices for Energy Electronics (2011) (0)
Optical characterization of single photon sources at SiO 2 /SiC inetrfaces (2020) (0)
Electrical Characteristics of GaN/SiC Heterojunction diodes by molecular-beam epitaxy (2004) (0)
Effects of Band Structure on Impact Ionization Coefficients in Wide Bandgap Semiconductors (2020) (0)
E-l-4 ( Invited ) Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices (2008) (0)
High-rate deposition of a Si:H by direct photo-decomposition of Si2H6 using vacuum ultra violet light (1987) (0)
Title 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication (2018) (0)
Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals (2020) (0)
Molecular beam epitaxy of GaN on lattice-matched zirconium diboride substrates using low-temperature GaN and ALN nucleation layers (2004) (0)

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