Umesh. K. Mishra

Umesh. K. Mishra's AcademicInfluence.com Rankings

Umesh. K. Mishra

Engineering

#2367

World Rank

#3267

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Electrical Engineering

#416

World Rank

#464

Historical Rank

engineering Degrees

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Engineering

Umesh. K. Mishra's Degrees

PhD Electrical and Computer Engineering University of California, Santa Barbara
Masters Electrical and Computer Engineering University of California, Santa Barbara

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Umesh. K. Mishra's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

AlGaN/GaN HEMTs-an overview of device operation and applications (2002) (1635)
GaN-Based RF Power Devices and Amplifiers (2008) (1359)
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (2001) (1257)
30-W/mm GaN HEMTs by field plate optimization (2004) (975)
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors (2000) (957)
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018) (655)
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements (1997) (643)
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) (624)
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells (1998) (622)
Very-high power density AlGaN/GaN HEMTs (2001) (486)
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures (1998) (425)
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap (2008) (418)
High-power AlGaN/GaN HEMTs for Ka-band applications (2005) (399)
AlGaN/AlN/GaN high-power microwave HEMT (2001) (394)
POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY (1999) (379)
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate (2001) (369)
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006) (363)
AlGaN/GaN high electron mobility transistors with InGaN back-barriers (2006) (342)
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition (2002) (332)
VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS (1996) (329)
Electrical characterization of GaN p-n junctions with and without threading dislocations (1998) (324)
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) (324)
Heavy doping effects in Mg-doped GaN (2000) (322)
Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire (1995) (309)
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (2004) (303)
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (2004) (303)
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN (1999) (300)
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy (2001) (295)
Anisotropic epitaxial lateral growth in GaN selective area epitaxy (1997) (272)
Phase noise in coupled oscillators: theory and experiment (1997) (266)
High breakdown GaN HEMT with overlapping gate structure (2000) (266)
Coupling of InGaN quantum-well photoluminescence to silver surface plasmons (1999) (266)
Dislocation generation in GaN heteroepitaxy (1998) (265)
Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition (1996) (252)
High Al-content AlGaN/GaN MODFETs for ultrahigh performance (1998) (251)
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 3202 Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study (1998) (251)
ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES (1999) (245)
Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition (1998) (236)
Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN (1996) (222)
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition (1998) (221)
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010) (219)
Dislocation scattering in a two-dimensional electron gas (2000) (214)
The toughest transistor yet [GaN transistors] (2002) (214)
High internal and external quantum efficiency InGaN/GaN solar cells (2011) (205)
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) (203)
N-polar GaN∕AlGaN∕GaN high electron mobility transistors (2007) (201)
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004) (199)
Semiconductor Device Physics and Design (2007) (191)
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition (2009) (185)
Ultra-high speed modulation-doped field-effect transistors: a tutorial review (1992) (180)
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB (2001) (174)
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures (2003) (171)
Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V (1997) (170)
GaN microwave electronics (1997) (170)
Spin coherence and dephasing in GaN (2001) (169)
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors (2001) (165)
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy (2000) (165)
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors (2004) (161)
Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) (160)
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition (2007) (156)
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition (2004) (156)
Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length (1988) (155)
Current instabilities in GaN-based devices (2001) (154)
High-performance E-mode AlGaN/GaN HEMTs (2006) (153)
Growth and characterization of bulk InGaN films and quantum wells (1996) (152)
Optical properties of InGaN quantum wells (1999) (149)
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures (1999) (148)
N-polar GaN epitaxy and high electron mobility transistors (2013) (148)
Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005) (147)
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth (1999) (146)
Polarization-enhanced Mg doping of AlGaN/GaN superlattices (1999) (143)
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon (2005) (143)
Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure (2013) (142)
Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition (2008) (140)
Measured microwave power performance of AlGaN/GaN MODFET (1996) (140)
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012) (138)
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors (2003) (131)
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition (2003) (130)
Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films (2003) (129)
Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (2010) (128)
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN (2000) (126)
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm (2011) (125)
Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE (1990) (123)
AlGaN/GaN current aperture vertical electron transistors with regrown channels (2004) (122)
Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition (2004) (121)
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (2017) (121)
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application (2013) (121)
Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors (2000) (120)
Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008) (119)
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method (2011) (119)
Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes (2000) (118)
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate (2004) (117)
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth (2010) (116)
Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask (2006) (116)
AlGaN/GaN heterojunction bipolar transistor (1999) (115)
Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy (2017) (111)
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy (2000) (111)
Hydrogen passivation of deep levels in n–GaN (2000) (111)
Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics (2006) (106)
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation (2004) (105)
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors (2004) (105)
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers (2000) (105)
Gallium nitride based transistors (2001) (105)
Growth and characterization of N-polar InGaN/GaN multiquantum wells (2007) (103)
In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates (2017) (103)
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer (1999) (102)
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers (1999) (102)
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies (2000) (99)
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs (2018) (99)
Surface Potential at as‐Grown GaN(0001) MBE Layers (2002) (99)
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures (2003) (98)
Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs (2001) (95)
Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells (2006) (95)
Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface (2009) (93)
Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz (1997) (92)
Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE (2004) (92)
Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts (2005) (91)
Phase noise in externally injection-locked oscillator arrays (1997) (91)
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition (1998) (91)
Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD (1998) (90)
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction (2000) (90)
Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances (2008) (89)
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates (2005) (88)
Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs (2004) (88)
The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs (2006) (88)
Solar-blind AlGaN-based inverted heterostructure photodiodes (2000) (88)
HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (1999) (86)
High-performance submicrometer AlInAs-GaInAs HEMT's (1988) (86)
Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells (1998) (86)
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers (2004) (85)
Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors (2013) (85)
High quality AlN grown on SiC by metal organic chemical vapor deposition (2008) (85)
Two-photon absorption study of GaN (2000) (85)
Gate breakdown in MESFETs and HEMTs (1991) (84)
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques (2004) (84)
Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN (1995) (84)
Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy (2008) (84)
Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition (1996) (84)
AlGaN/GaN polarization-doped field-effect transistor for microwave power applications - eScholarship (2004) (84)
Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer (2004) (83)
Refractive index study of AlxGa1−xN films grown on sapphire substrates (2003) (83)
CATHODOLUMINESCENCE MAPPING OF EPITAXIAL LATERAL OVERGROWTH IN GALLIUM NITRIDE (1999) (82)
Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition (2008) (81)
A C-band high-dynamic range GaN HEMT low-noise amplifier (2004) (80)
Multi‐color light emitting diode using polarization‐induced tunnel junctions (2007) (80)
/sup 60/Co gamma irradiation effects on n-GaN Schottky diodes (2003) (79)
Direct water photoelectrolysis with patterned n-GaN (2007) (79)
Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy (2004) (79)
Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature (2006) (78)
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors (2011) (78)
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells (2011) (78)
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures (2003) (77)
AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE (1989) (76)
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements (2013) (76)
Growth and characteristics of Fe-doped GaN (2003) (76)
High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy (2011) (74)
Short-channel Al/sub 0.5/Ga/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz (1997) (73)
Distribution of donor states on etched surface of AlGaN/GaN heterostructures (2010) (73)
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes (2011) (72)
Accurate mobility and carrier concentration analysis for GaN (1997) (72)
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates (2006) (72)
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation (2006) (71)
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN (2005) (71)
Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures (2005) (71)
High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance (1999) (71)
Transient characteristics of GaN-based heterostructure field-effect transistors (2003) (71)
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction (2015) (71)
Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs (2006) (70)
High power AlGaN/GaN HEMTs for microwave applications (1997) (70)
GaN HBT: toward an RF device (2001) (70)
High conductivity modulation doped AlGaN/GaN multiple channel heterostructures (2003) (69)
AlGaN/GaN High Electron Mobility Transistors (2007) (67)
Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology (1988) (67)
Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells (1998) (67)
Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures (2010) (66)
V-Gate GaN HEMTs for X-Band Power Applications (2008) (66)
Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment (2006) (65)
Time-resolved photoluminescence of In x Ga 1 − x N / G a N multiple quantum well structures: Effect of Si doping in the barriers (2001) (65)
A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz (2006) (65)
Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions (2010) (65)
Ultrafast electron dynamics study of GaN (1999) (64)
Depletion region effects in Mg-doped GaN (2000) (64)
Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate (2005) (64)
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology (2003) (64)
Kilovolt AlGaN/GaN HEMTs as Switching Devices (2001) (63)
Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth (2007) (63)
High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels (2010) (63)
60Co gamma-irradiation-induced defects in n-GaN (2002) (62)
Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy (2009) (61)
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors (2013) (61)
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD (1998) (61)
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz (2017) (60)
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes (1998) (59)
Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth (2011) (59)
Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors (2011) (59)
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope (2003) (59)
Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition (1997) (58)
Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures (2013) (58)
Molecular beam epitaxy for high-performance Ga-face GaN electron devices (2013) (58)
Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy (2002) (57)
High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts (1998) (57)
Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition (2001) (57)
Preparation of indium nitride micro- and nanostructures by ammonolysis of indium oxide (2004) (57)
Effect of ohmic contacts on buffer leakage of GaN transistors (2006) (57)
Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride (2000) (56)
Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz (2007) (56)
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells (2012) (56)
AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit (2008) (56)
Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN (2001) (56)
1 - 8-GHz GaN-based power amplifier using flip-chip bonding (1999) (56)
Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN (2001) (55)
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (2002) (55)
Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures (2012) (55)
Characterization of an AlGaN/GaN two-dimensional electron gas structure (2000) (55)
Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs (2008) (54)
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation (2009) (54)
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy (2013) (53)
AlInAs-GaInAs HEMT for microwave and millimeter-wave applications (1989) (53)
Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN (2005) (53)
Measurement of second order susceptibilities of GaN and AlGaN (2005) (53)
Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures (2006) (53)
Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2005) (53)
Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors (2004) (52)
Millimeter-wave low-noise high electron mobility transistors (1985) (52)
Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition (2002) (52)
High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells (1998) (51)
OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET (2016) (51)
Mercury(II) selective sensors based on AlGaN/GaN transistors. (2016) (51)
Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers (2000) (51)
Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures (2008) (51)
Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts (2008) (51)
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) (2002) (50)
Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films (2008) (50)
Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition (2008) (50)
MOVPE growth and characterization of Mg-doped GaN (1998) (49)
Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress (2010) (49)
Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy (2006) (49)
Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases (2002) (48)
Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates (2009) (48)
Spiral Growth of InGaN Nanoscale Islands on GaN (1998) (48)
Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors (1999) (48)
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) (2005) (47)
V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation (2008) (47)
Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs (2002) (47)
Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition (2009) (47)
Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices (2017) (47)
GAIN SPECTROSCOPY ON INGAN/GAN QUANTUM WELL DIODES (1997) (46)
Selective-area regrowth of GaN field emission tips (1997) (46)
A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier (2000) (46)
Polarity inversion of N-face GaN using an aluminum oxide interlayer (2010) (45)
Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions (2010) (45)
Femtosecond Z-scan measurement of GaN (1999) (44)
p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents (2010) (44)
Electron mobility in graded AlGaN alloys (2006) (44)
Low resistance ohmic contact to n-GaN with a separate layer method (1997) (44)
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$ (2012) (44)
Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC (2006) (43)
Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures (1997) (43)
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance (2018) (43)
Microwave performance of 0.25-µm gate length high electron mobility transistors (1985) (43)
3 - 9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching (1999) (43)
2.1 A/mm current density AlGaN/GaN HEMT (2003) (43)
Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films (2003) (43)
Electron Transport in III–V Nitride Two‐Dimensional Electron Gases (2001) (42)
SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES (2004) (42)
Nonpolar a-plane p-type GaN and p-n Junction Diodes (2004) (42)
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures (2000) (42)
High breakdown voltage p–n diodes on GaN on sapphire by MOCVD (2016) (42)
Polarity control during molecular beam epitaxy growth of Mg-doped GaN (2003) (42)
Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge (2000) (42)
The impact of epitaxial layer design and quality on GalnAs/AllnAs high-electron-mobility transistor performance (1988) (42)
N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier (2008) (41)
Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy (2012) (41)
A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors (2009) (41)
Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K (1986) (41)
Selective area epitaxy of GaN for electron field emission devices (1997) (41)
ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors (2006) (41)
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy (2014) (40)
Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator (2001) (40)
Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films (2004) (40)
Impact of strain on free-exciton resonance energies in wurtzite AlN (2007) (39)
Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors (2001) (39)
Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs (2011) (39)
Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices (2010) (38)
The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs (2009) (38)
Epitaxially-grown GaN junction field effect transistors (2000) (38)
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition (2008) (38)
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer (2009) (38)
High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate (2006) (37)
Coupling of InGaN quantum well photoluminescence to silver surface plasmons (1999) (37)
Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells (2015) (37)
Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs (2012) (37)
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs (2020) (37)
Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN (2007) (37)
Linear and nonlinear optical properties of In x Ga 1 − x N / G a N heterostructures (2000) (37)
Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs (2002) (37)
AlGaN/GaN HBTs using regrown emitter (1999) (37)
Dipole scattering in polarization induced III–V nitride two-dimensional electron gases (2000) (36)
Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells (1998) (36)
N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax (2012) (36)
Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs (2012) (35)
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) (2018) (35)
N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LG product of 16.8 GHz-µm (2009) (35)
Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy (2006) (35)
Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates (2005) (35)
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors (2011) (35)
High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration (1999) (35)
Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors (2012) (35)
Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs (2003) (35)
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors (2016) (34)
8-watt GaN HEMTs at millimeter-wave frequencies (2005) (34)
Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs (2002) (34)
Power and linearity characteristics of GaN MISFETs on sapphire substrate (2004) (34)
Next generation defect characterization in nitride HEMTs (2011) (34)
Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding (2006) (34)
Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits (1989) (34)
Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells (2001) (33)
Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz (2007) (33)
Nitride-based high electron mobility transistors with a GaN spacer (2006) (33)
Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers (2012) (33)
GaN field emitter array diode with integrated anode (1998) (33)
Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition (2013) (33)
Optimization of AlGaN/GaN HEMTs for high frequency operation (2006) (33)
Biocompatibility of semiconducting AlGaN/GaN material with living cells (2012) (33)
Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs (2009) (33)
Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology (2012) (33)
GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage (1997) (33)
GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design (2002) (33)
High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage (2000) (32)
Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source (2012) (32)
Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels (2016) (32)
GaAs MESFET's on a truly insulating buffer layer: demonstration of the GaAs on insulator technology (1997) (32)
Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT (2006) (32)
REDUCED THERMAL CONDUCTIVITY IN LOW-TEMPERATURE-GROWN GAAS (1999) (32)
Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors (2013) (32)
Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN (2009) (31)
Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor (2012) (31)
The effect of InP substrate misorientation on GaInAs‐AlInAs interface and alloy quality (1988) (31)
N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz (2016) (31)
Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography (2017) (31)
The growth of N-face GaN by MOCVD: effect of Mg, Si, and In (2004) (31)
Optimization of AlGaN∕GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching (2004) (31)
Generation of coherent acoustic phonons in strained GaN thin films (2001) (30)
Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties (2004) (30)
Total GaN solution to electrical power conversion (2011) (30)
GaN-Based FETs for Microwave Power Amplification (1999) (30)
Commercialization and reliability of 600 V GaN power switches (2015) (29)
Demonstration of ultra-small ( 0.2%) for mini-displays (2021) (29)
Step-flow growth of ZnO(0 0 0 1) on GaN(0 0 0 1) by metalorganic chemical vapor epitaxy (2008) (29)
Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz (2000) (29)
LiNbO3 thin film growth on (0001)-GaN (2005) (29)
Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\Omega\cdot \hbox{mm}$ $R_{\rm on}$ (2012) (29)
High performance and large area flip-chip bonded AlGaN/GaN MODFETs (1997) (29)
The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy (2002) (29)
Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition (2010) (29)
Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes (2016) (29)
Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers (1998) (29)
Channeling as a mechanism for dry etch damage in GaN (2000) (28)
Scanning tunneling microscope-induced luminescence of GaN at threading dislocations (1999) (28)
A GaN differential oscillator with improved harmonic performance (2005) (28)
N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage (2016) (28)
Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm (2012) (28)
Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition (2007) (28)
Quantum and classical scattering times due to charged dislocations in an impure electron gas (2002) (28)
Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs (2009) (28)
High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation (2009) (28)
Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates (2010) (27)
Gate Breakdown in MESFET's and HEMT's (1991) (27)
Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy (2015) (27)
Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors (2009) (27)
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors (2013) (27)
InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices (2012) (27)
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz (2020) (27)
Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN (1998) (27)
Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition (2009) (26)
600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates (2014) (26)
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition (2009) (26)
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (2007) (26)
Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates (2020) (26)
Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs (2005) (26)
Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications (2005) (26)
Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures (2012) (26)
Space-charge-limited currents in nonstoichiometric GaAs (1996) (26)
Ca2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes. (2017) (26)
N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate (2011) (26)
Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures (2016) (26)
Proton-induced damage in gallium nitride-based Schottky diodes (2005) (25)
N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates (2015) (25)
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect (2009) (25)
Non-planar Selective Area Growth and Characterization of GaN and AlGaN (2003) (25)
Observation of arsenic precipitates in GaInAs grown at low temperature on InP (1993) (25)
Growth and properties of InGaN nanoscale islands on GaN (1998) (25)
N‐face high electron mobility transistors with a GaN‐spacer (2007) (25)
Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices (2012) (25)
Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface (1997) (25)
First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET (2017) (25)
High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD (1993) (25)
Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays (2020) (24)
Two-stage quasi-class-E power amplifier in GaN HEMT technology (2006) (24)
Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy (2011) (24)
Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films (1995) (24)
Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material (2012) (24)
Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing (2004) (24)
Growth of high purity N-polar (In,Ga)N films (2017) (24)
N-Polar InAlN/AlN/GaN MIS-HEMTs (2010) (24)
Flow modulation epitaxy of indium gallium nitride (1997) (23)
Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors (1998) (23)
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz (2012) (23)
W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz (2016) (23)
Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy. (2006) (23)
Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs (1998) (23)
Hydrogenation of GaAs MISFETs with Al2O3 as the gate insulator (1996) (23)
Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN (2019) (23)
Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment (2014) (23)
Explanation of anomalously high current gain observed in GaN based bipolar transistors (2003) (23)
High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts (1996) (23)
Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base (2011) (23)
Measurement of the hot electron mean free path and the momentum relaxation rate in GaN (2014) (23)
Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN (2001) (23)
RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate (2009) (23)
High power GaN oscillators using field-plated HEMT structure (2005) (22)
MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications (2009) (22)
Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate (2007) (22)
Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs (2002) (22)
High-performance N-polar GaN enhancement-mode device technology (2013) (22)
Observation of impurity effects on the nucleation of arsenic precipitates in GaAs (1993) (22)
Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates (2020) (22)
Impact of CF 4 Plasma Treatment on GaN (2007) (22)
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's (2002) (22)
N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax (2013) (22)
Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates (2010) (22)
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull (2016) (22)
High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency (2009) (22)
Improvement of GaN-based laser diode facets by FIB polishing (1998) (22)
Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors (2014) (22)
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design (2004) (22)
Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer (2010) (21)
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2007) (21)
Proceedings of low temperature (LT) GaAs and related materials (1992) (21)
Current-induced spin polarization in gallium nitride (2008) (21)
Power performance of microwave high-electron mobility transistors (1985) (21)
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition (2013) (21)
Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs (1989) (21)
Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime (2014) (21)
Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films (2005) (21)
Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays (1998) (21)
Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors (2011) (20)
AlGaN/GaN-based biosensor for label-free detection of biological activity (2013) (20)
Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs (2012) (20)
Bias-dependent performance of high-power AlGaN/GaN HEMTs (2001) (20)
A high-efficiency traveling-wave power amplifier topology using improved power-combining techniques (1998) (20)
Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well (2006) (20)
Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors (2008) (20)
InP-based HEMTs: status and potential (1994) (20)
AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate (2004) (19)
Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures (2007) (19)
Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity (2014) (19)
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells (2006) (19)
Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well (1999) (19)
Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs (2008) (19)
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells (2011) (19)
Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor (2005) (19)
N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications (2011) (19)
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure (2000) (19)
Characterization of AlGaN/GaN p-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors (2005) (18)
Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress (2011) (18)
Structural and electrical characterization of a‐plane GaN grown on a‐plane SiC (2003) (18)
Impact of Point Defects on the Luminescence Properties of (Al,Ga)N (2008) (18)
MBE Grown GaAs MESFETs with ultra-high gmand fT (1986) (18)
Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices (2016) (18)
The effect of interface and alloy quality on the DC and RF performance of Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As HEMTs (1989) (18)
A 50-W AlGaN/GaN HEMT amplifier (2000) (18)
Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) (2002) (18)
Effects of As4 flux on reflection high‐energy electron diffraction oscillations during growth of GaAs at low temperatures (1994) (18)
Low temperature limits to molecular beam epitaxy of GaAs (1994) (18)
Spatial control of InGaN luminescence by MOCVD selective epitaxy (1998) (18)
Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors (2008) (18)
$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT (2009) (18)
Neutron irradiation effects on gallium nitride-based Schottky diodes (2013) (18)
Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers (1999) (18)
Interface roughness scattering in ultra-thin N-polar GaN quantum well channels (2012) (18)
AlGaN/GaN dual-gate modulation-doped field-effect transistors (1999) (18)
AlGaN/GaN HEMT With a Transparent Gate Electrode (2009) (17)
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions (2011) (17)
Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors (2001) (17)
GaAs-based, 1.55 /spl mu/m high speed, high saturation power, low-temperature grown GaAs p-i-n photodetector (1998) (17)
Suppression of Mg propagation into subsequent layers grown by MOCVD (2017) (17)
Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN (2018) (17)
Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN (2001) (17)
Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices (2017) (17)
Annealing of C60o gamma radiation-induced damage in n-GaN Schottky barrier diodes (2007) (17)
Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy (2008) (17)
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors (2019) (17)
Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition (2010) (17)
Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch (2018) (17)
A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier (1993) (17)
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion (2016) (16)
Observation of huge nonlinear absorption enhancement near exciton resonance in GaN (2003) (16)
Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz (2016) (16)
AlInAs/GaInAs on InP HEMT low noise MMIC amplifiers (1991) (16)
Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress (2008) (16)
Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure (2010) (16)
Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition (2019) (16)
AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment (2019) (16)
Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an In x Ga 1 − x N / GaN double heterostructure (2001) (16)
Large near resonance third order nonlinearity in GaN (2000) (16)
Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states (2001) (16)
Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs (2011) (16)
X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE (2008) (16)
Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN (2020) (16)
Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors (2012) (16)
Current–voltage characteristics of polar heterostructure junctions (2002) (15)
Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy (2008) (15)
Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts (2007) (15)
Cleaved and etched facet nitride laser diodes (1998) (15)
Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition (2003) (15)
Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode (1984) (15)
Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors (2002) (15)
AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport (2004) (15)
Solar‐Blind p‐GaN/i‐AlGaN/n‐AlGaN Ultraviolet Photodiodes on SiC Substrate (2001) (15)
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells (1997) (15)
Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs (2008) (15)
Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations (2010) (15)
Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz (2011) (15)
Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation (2007) (14)
Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process (1998) (14)
Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates (2008) (14)
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells (2013) (14)
A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency (2013) (14)
Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration (1997) (14)
Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors (2013) (14)
In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge (2014) (14)
Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs (2004) (14)
Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current (2020) (14)
Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN (2013) (14)
6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates (2021) (14)
Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells (1998) (14)
Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire (1999) (14)
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy (2006) (14)
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy (2017) (14)
An improved methodology for extracting interface state density at Si3N4/GaN (2020) (14)
Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (2016) (14)
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE (2019) (13)
Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD (2016) (13)
Integration of Ba Sr TiO Thin Films With AlGaN/GaN HEMT Circuits (2004) (13)
Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence (1998) (13)
Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding (2006) (13)
High-linearity class B power amplifiers in GaN HEMT technology (2003) (13)
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density (2020) (13)
GaAs planar-doped barrier vacuum microelectronic electron emitters (1993) (13)
Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ (2018) (13)
Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films (2018) (13)
Interdigitated Multipixel Arrays for the Fabrication of High-Power Light-Emitting Diodes With Very Low Series Resistances, Reduced Current Crowding, and Improved Heat Sinking (2007) (13)
Field-plated GaN HEMTs and amplifiers (2005) (13)
Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs (2019) (13)
Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures (2020) (13)
Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale (2012) (13)
Neutron irradiation effects on metal-gallium nitride contacts (2014) (13)
Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures (2015) (13)
Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors (2019) (13)
Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure (2001) (13)
AlGaN/GaN current aperture vertical electron transistors (2002) (13)
Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence (2010) (13)
Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN (2013) (13)
Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization (2000) (13)
Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy (2001) (13)
Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures (2004) (13)
MMIC Class-F Power Amplifiers using Field-Plated AlGaN/GaN HEMTs (2006) (12)
Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers (2014) (12)
First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain (2019) (12)
GaN based microwave power HEMTs (1998) (12)
Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition (2016) (12)
Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode (2015) (12)
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces (2016) (12)
Low Phase-Noise 5 GHz AlGaN/GaN HEMT Oscillator Integrated with BaxSr1-xTiO3 Thin Films (2004) (12)
Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance (2007) (12)
Reconfigurable optical properties in InGaN/GaN quantum wells (1997) (12)
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs (2002) (12)
Characteristics of metal/tunnel-oxide/n/p+ silicon switching devices—II: Two-dimensional effects in oxide-isolated structures (1982) (12)
Status of AlGaN/GaN HEMT technology - a UCSB perspective (2005) (12)
RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (2011) (12)
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs (2002) (12)
Gallium nitride electronics: Watt is the limit? [summary of GaN semiconductor devices] (2004) (12)
Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances (2006) (12)
Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale (2010) (12)
Polarization effects and transport in AlGaN/GaN system (2000) (12)
Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers (2011) (12)
A 30-GHz monolithic single balanced mixer with integrated dipole receiving element (1985) (11)
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz (2003) (11)
High-breakdown AlGaAs/InGaAs/GaAs PHEMT with tellurium doping (1995) (11)
Atom probe tomography studies of Al2O3 gate dielectrics on GaN (2014) (11)
AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching (2003) (11)
Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability (2012) (11)
Photoreflectance studiesof N‐ and Ga‐face AlGaN/GaN heterostructures confininga polarisation induced 2DEG (2003) (11)
Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN (2019) (11)
Dislocation reduction in GaN films through selective island growth of InGaN (2000) (11)
Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] (2008) (11)
Indium surfactant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition (2001) (11)
Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN (2014) (11)
W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width (2016) (11)
First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) (2017) (11)
650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control (2016) (11)
InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays (2015) (11)
Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs (2018) (10)
Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells (1998) (10)
Linearity and gain characteristics of AlGaN/GaN HEMTs (2002) (10)
MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode (1997) (10)
Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping (1992) (10)
Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor (2003) (10)
Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime (2008) (10)
Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy (2001) (10)
High Linearity, Robust, AIGaN-GaN HEMTs for LNA & Receiver ICs (2002) (10)
Impact ionization in N-polar AlGaN/GaN high electron mobility transistors (2014) (10)
Optimization of the p-GaN window layer for InGaN/GaN solar cells (2010) (10)
Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN (2019) (10)
Electron transport and intrinsic mobility limits in two-dimensional electron gases of III-V nitride heterostructures (2001) (10)
Lateral GaN Devices for Power Applications (from kHz to GHz) (2017) (10)
Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (2007) (10)
Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis (2010) (10)
Capacitance-voltage profiling on polar III-nitride heterostructures (2012) (10)
High-temperature performance of GaAs-based HFET structure containing LT-AlGaAs and LT-GaAs (1998) (10)
N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications (2010) (10)
Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base (2015) (10)
Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes (1999) (10)
Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells (2008) (10)
Toward a physical understanding of the reliability-limiting EC-0.57 eV trap in GaN HEMTs (2014) (10)
GaxIn1−xAs/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic chemical vapor deposition (1994) (10)
Growth of N-polar GaN by ammonia molecular beam epitaxy (2018) (10)
Short-channel effects in 0.5-µm source-drain spaced vertical GaAs FET's—A first experimental investigation (1983) (10)
High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz (2017) (10)
Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors (2013) (9)
Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy (2000) (9)
Surface-oriented low-parasitic Mott diode for EHF mixer applications (1985) (9)
Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels (2018) (9)
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs (2006) (9)
X-band power performance of N-face GaN MIS-HEMTs (2011) (9)
Transient processes in AlGaN/GaN heterostructure field effect transistors (2000) (9)
Selective Area Mass Transport Regrowth of Gallium Nitride (2001) (9)
Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (9)
Polarization induced three-dimensional hole gas in compositionally graded InxGa1−xN layer (2016) (9)
AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy (2012) (9)
Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN (2020) (9)
Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates (2017) (9)
Use of multichannel heterostructures to improve the access resistance and f/sub T/ linearity in GaN-based HEMTs (2004) (9)
mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire (2016) (9)
Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy (2012) (9)
High linearity GaN HEMT power amplifier with pre-linearization gate diode (2004) (9)
Selective dry etching of GaN over AlGaN in BCl/sub 3//SF/sub 6/ mixtures (2004) (9)
MBE-grown AlGaN/GaN HEMTs on SiC (2004) (8)
1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) (2017) (8)
Elucidation of the correlation between atomic-level defects in GaN nanoparticles and photoluminescence properties by NMR, XRD and TEM (2006) (8)
Polarization engineered 1-dimensional electron gas arrays (2012) (8)
AlGaN/GaN transistors for power electronics (2010) (8)
High performance deeply-recessed GaN power HEMTs without surface passivation (2006) (8)
Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits (1996) (8)
A novel device design to lower the on-resistance in GaN trench MOSFETs (2016) (8)
Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD (2018) (8)
High aspect ratio asymmetric gate structures employed in novel self‐aligned high electron mobility transistor technology (1990) (8)
InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs) (2012) (8)
Electron Beam Pumped MQW InGaN/GaN Laser (1997) (8)
Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures (2011) (8)
Demonstration of a GaN‐spacer high electron mobility transistor with low alloy scattering (2005) (8)
Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy (2015) (8)
AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer (1997) (8)
High speed and high power AlGaN/GaN MODFETs (1997) (8)
Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices (2020) (8)
Commercialization of 600V GaN HEMTs (2014) (8)
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE (2021) (8)
Applications of GaAs grown at a low temperature by molecular beam epitaxy (1993) (8)
Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness (2016) (8)
Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors (2019) (8)
Field Effect Transistors (2008) (8)
GaN-Based Transistors for High-Frequency Applications (2011) (8)
High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes (2001) (8)
Device performance of submicrometre MESFETs with LTG passivation (1993) (8)
InGaN/GaN nanopillar‐array light emitting diodes (2007) (7)
Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures (2020) (7)
Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures (2001) (7)
Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane (2017) (7)
Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors (2020) (7)
Field effect transistors: FETs and HEMTs (2001) (7)
Microwave class-E GaN power amplifiers (2005) (7)
Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG (2002) (7)
Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition (2020) (7)
MMIC class-F power amplifiers using field-plated GaN HEMTs (2006) (7)
Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source (2009) (7)
P–n junction diodes with polarization induced p-type graded InxGa1–xN layer (2017) (7)
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices (2016) (7)
High-speed p/sup +/ GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD (1993) (7)
Oxidation control of GaAs pHEMTs for high efficiency applications (2002) (7)
Control of Be diffusion in AlInAs/GaInAs heterostructure bipolar transistors through use of low‐temperature GaInAs (1992) (7)
3-watt AlGaN-GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding (1998) (7)
Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films (2004) (7)
N-polar GaN MIS-HEMTs on sapphire with a proposed figure of merit fmax·VDS, Q of 9.5THz.V (2017) (7)
Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs (2020) (7)
AlGaN/GaN HEMTs with an InGaN-based back-barrier (2005) (7)
Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching (2008) (7)
Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells (2013) (7)
Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs (2017) (7)
AlGaN GaN polarization-doped ﬁeld-effect transistor for microwave power applications (2004) (7)
Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors (2010) (7)
Mega‐cone blue LEDs based on ZnO/GaN direct wafer bonding (2007) (6)
A 3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs (2000) (6)
Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates (2011) (6)
Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures (2001) (6)
Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition (2017) (6)
Towards an AlGaN, solar blind, p-i-n photodetector (1999) (6)
Study of deleterious aging effects in GaN/AlGaN heterostructures (2003) (6)
Surface Passivation of AlGaN/GaN HEMTs (2008) (6)
Detection of biological reactions by AlGaN/GaN biosensor (2012) (6)
Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs (2007) (6)
Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy (2020) (6)
Growth and characterization of AlGaN/GaN/AlGaN field effect transistors (2010) (6)
DC and AC characteristics of a nonalloyed delta-doped MESFET by atomic layer epitaxy (1991) (6)
Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment (2008) (6)
GaN HEMTs grown on sapphire substrates for microwave power amplification (1999) (6)
Submicron GaAs vertical electron transistor (1982) (6)
Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition (2014) (6)
25GHz Static Frequency Dividers in AlInAs-GalnAs HEMT Technology (1988) (6)
Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas (1999) (6)
Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon (2011) (6)
Effect of 60Co gamma-irradiation on two-dimensional electron gas transport and device characteristics of AlGaN/GaN HEMTs (2005) (6)
n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550–750 °C (2003) (6)
High Voltage AlGaN/GaN Heterojunction Transistors (2004) (6)
Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD (2020) (6)
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN (2006) (6)
Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition (2003) (6)
Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching (2011) (6)
First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel (2020) (6)
Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs (2005) (6)
Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (0001¯) GaN (2012) (6)
The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor (2002) (5)
Tellurium‐doped Al0.43Ga0.57As/(In0.2)GaAs modulation doped heterostructures by molecular‐beam‐epitaxy (1995) (5)
Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy (2012) (5)
Short-Circuit Capability Demonstrated for GaN Power Switches (2021) (5)
N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess (2011) (5)
A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods (2020) (5)
MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth (2004) (5)
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment (2019) (5)
Compact Phase Shifter Design Using Barium Strontium Titanate Thin-Film Varactors (2003) (5)
Effect of Sb composition on lateral oxidation rates in AlAs1−xSbx (2000) (5)
AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers (2011) (5)
Comparison of deep level spectra in p‐type and n‐type GaN grown by molecular beam epitaxy (2007) (5)
Establishment of design space for high current gain in III-N hot electron transistors (2017) (5)
Maskless regrowth of GaN for trenched devices by MOCVD (2017) (5)
Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs (2004) (5)
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN (2017) (5)
m-plane ( 101¯0) and ( 202¯1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling (2014) (5)
GaN HFETs and MODFETs with very high breakdown voltage and large transconductance (1996) (5)
A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design (2010) (5)
MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructures (2007) (5)
Co Gamma Irradiation Effects on -GaN Schottky Diodes (2003) (5)
A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si (2005) (5)
Determination of the switching criterion for metal/tunnel-oxide/N/P+silicon switching devices (1981) (5)
Linearity of high Al-content AlGaN/GaN HEMTs (2001) (5)
Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition (2017) (5)
AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts (2007) (5)
Study of Pd/Au metallisation and surface characteristics on Mg-doped GaN induced by low power inductively coupled plasma etching (2010) (5)
An Improved MM-PO Method with UV Technique for Scattering from an Electrically Large Ship on a Rough Sea Surface at Low Grazing Angle (2011) (5)
Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN (1998) (5)
N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design (2011) (5)
Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN (2019) (5)
Anomalous output conductance in N-polar GaN-based MIS-HEMTs (2011) (5)
Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (5)
IIA-3 cryogenic noise performance of quarter-micrometer gate-length high-electron-mobility transistors (1985) (5)
A new field-plated GaN HEMT structure with improved power and noise performance (2004) (5)
First demonstration of GaAs on insulator (GOI) technology (1996) (5)
Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n+-GaN contact layer (2012) (5)
Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz (2011) (5)
Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology (1999) (4)
A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs (2008) (4)
Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures (2007) (4)
Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications (2004) (4)
Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system (2009) (4)
Ultra-high speed AlInAs-GaInAs HEMT technology (1987) (4)
Optimization of Annealing Process for Improved InGaN Solar Cell Performance (2013) (4)
1200V GaN Switches on Sapphire Substrate (2022) (4)
Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)] (2002) (4)
Effects of Carrier Localization on the Optical Characteristics of MOCVD‐Grown InGaN/GaN Heterostructures (1999) (4)
Investigation of the electronic properties of in situ annealed low‐temperature gallium arsenide grown by molecular beam epitaxy (1992) (4)
Effects of doping variations on electron transport in GaAs n+‐n‐n+ structures (1992) (4)
Improvement in low energy ion‐induced damage with a low temperature GaAs capping layer (1996) (4)
High Electron Mobility Transistors (HEMTs) (2007) (4)
Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors (2007) (4)
T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art fMAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs (2010) (4)
Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation (2004) (4)
GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current (2021) (4)
AlGaN-GaN HEMTs: material, device, circuit technology and applications (2003) (4)
Breakdown characterization of AlInAs/GaInAs junction modulated HEMTs (JHEMTs) with regrown ohmic contacts by MOCVD (1993) (4)
AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n/sup +/ re-growth (1998) (4)
Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors (2002) (4)
MOCVD growth of AlGaN films for solar blind photodetectors (2004) (4)
High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology (2010) (4)
Design Space of III-N Hot Electron Transistors Using AlGaN and InGaN Polarization-Dipole Barriers (2015) (4)
Noise performance of submicrometer AlInAs-GaInAs HEMTs (1988) (4)
Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on 4-6 December 1991. Low Temperature (LT) GaAs and Related Materials. Volume 241. (1992) (4)
Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale (2021) (4)
High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs (1995) (4)
Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure (2001) (4)
High performance InP JFETs grown by MOCVD using tertiarybutylphosphine (1994) (4)
High current gain GaN bipolar junction transistors with regrown emitters (2000) (4)
High-efficiency class-E power amplifier using field-plated GaN HEMTs (2005) (4)
Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers (2014) (4)
Electrostatic mechanisms responsible for device degradation in AlGaN/AlN/GaN HEMTs (2007) (4)
Strain relaxation of InGaAs by lateral oxidation of AlAs (2000) (4)
Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm (2011) (3)
A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology (2012) (3)
Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions (2021) (3)
Novel devices based on the combination of nitride and II–VI materials (2006) (3)
Phase Noise in Externally Injection-Locked (1997) (3)
Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs (2004) (3)
Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells (1999) (3)
Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ (2018) (3)
Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor (2013) (3)
Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (3)
Field Effect Transistors: MOSFET (2008) (3)
GaN vertical n‐p junctions prepared by Si ion implantation (2008) (3)
Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTs (2004) (3)
Barrier height fluctuations in InGaN polarization dipole diodes (2015) (3)
Strain relaxation in InGaAs lattice engineered substrates (2000) (3)
Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator (1991) (3)
Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy (2016) (3)
Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy (2003) (3)
Erratum: “Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures” [Appl. Phys. Lett. 101, 091601 (2012)] (2012) (3)
N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz (2016) (3)
Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth (2010) (3)
Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition (2018) (3)
GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges (2018) (3)
Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy (2009) (3)
Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe (2000) (3)
Current flow mechanisms in GaAs planar‐doped‐barrier diodes with high built‐in fields (1993) (3)
Modeling of CPW Based Passive Networks using Sonnet Simulations for High Efficiency Power Amplifier MMIC Design (2011) (3)
Oxide based compound semiconductor electronics (1997) (3)
Tunnel junctions in GaN/AlN for optoelectronic applications (2005) (3)
Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain (2015) (3)
AlGaN-GaN HEMTs: material, device, circuit technology and applications (2003) (3)
Commercially Available N-polar GaN HEMT Epitaxy for RF Applications (2021) (3)
Temperature dependence of the current-voltage characteristics of AlGaN/GaN HEMT (2003) (3)
Progress in gallium nitride-based bipolar transistors (2001) (3)
IIA-6 High performance submicrometer AlInAs-GaInAs HEMT's (1987) (3)
Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica (2012) (3)
GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes (1994) (3)
Reliability of AlGaN/GaN HEMTs; An overview of the results generatedunder the ONR DRIFT program (2012) (3)
MOCVD growth and properties of thin Al/sub x/Ga/sub 1-x/N layers on GaN (1998) (3)
Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates (2009) (3)
Electronic and Optoelectronic Applications of Materials Grown at a Low Temperature by MBE (1991) (3)
Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback (2003) (3)
High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition (1995) (3)
High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector (1998) (3)
AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS (2008) (3)
Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN (2008) (3)
Vertical electron transistors with In0.53Ga0.47As channel and N-polar In0.1Ga0.9N/GaN drain achieved by direct wafer-bonding (2014) (2)
Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN (2000) (2)
Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization‐doped 3D electron slabs in graded‐AlGaN (2003) (2)
High electron mobility transistors (2003) (2)
Structural Properties of Semiconductors (2008) (2)
M ‐plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c ‐plane patterned templates (2008) (2)
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures (2008) (2)
Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin ﬁlms (2003) (2)
Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells (2005) (2)
InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs (2013) (2)
Active device technologies (2000) (2)
Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy (2021) (2)
On the identification of trap location in AlGaN/GaN HEMTs during electrical stress (2010) (2)
Electrical characterization of low defect density nonpolar (11 ¯ 2 0) a -plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (2)
Novel vertical GaAs FET structure with submicrometre source-to-drain spacing (1983) (2)
AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate (2000) (2)
Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) (2003) (2)
Monolithic optically variable capacitors for tunable microwave antennas (1997) (2)
Record power added efficiency, low voltage GOI (GaAs On Insulator) MESFET technology for wireless applications (1998) (2)
Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current (2020) (2)
First Demonstration of p-HEMTs in the newly developed GaAs On Insulator (GOI) Technology (1996) (2)
Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition (2003) (2)
A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element (1985) (2)
INP-BASED DEVICES AND THEIR APPLICATIONS FOR MERGED FET-HBT TECHNOLOGIES (1996) (2)
Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits (2003) (2)
Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE (2022) (2)
N-polar GaN-based MIS-HEMTs for mixed signal applications (2010) (2)
Time-resolved photoluminescence studies of GaN, InGaN, and AlGaN grown by metalorganic chemical vapor deposition (1999) (2)
pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. (2019) (2)
Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor (2015) (2)
Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding (2008) (2)
A Comparison of the Optical Characteristics of AlGaN, GaN, and InGaN Thin Films (1999) (2)
High speed devices (2009) (2)
n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION (2004) (2)
HBT on LEO GaN (2000) (2)
Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD (2019) (2)
Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy (2017) (2)
OSA Proceedings on Ultrafast Electronics and Optoelectronics Held in San Francisco, California on January 25 -27, 1993. Volume 14, (1993) (2)
Gallium nitride based electronics and opto-electronics (1998) (2)
Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices (2022) (2)
Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures (1999) (2)
Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers (2014) (2)
Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting (2012) (2)
Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding (2005) (2)
Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films (2021) (2)
Low contact resistance to plasma-etched p-type GaN (2011) (2)
Field emission from selectively regrown GaN pyramids (1996) (2)
Junction heterostructures for high performance electronics (1995) (2)
0.2 [micro sign]m gate length, non-alloyed P+-AlInAs/N-AlInAs/GaInAs JHEMTs with ft = 62 GHz (1996) (2)
Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices (2022) (2)
Dispersion-free AlGaN/GaN CAVET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer (2010) (2)
The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor (2015) (2)
Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures (1996) (2)
1% efficiency Al/sub 0.3/Ga/sub 0.7/As planar-doped-barrier electron emitters (1993) (2)
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT (2020) (2)
Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs (2004) (2)
GaN planar-doped-barrier electron emitter with piezoelectric surface barrier lowering (2001) (2)
Electronic levels in semiconductors (2008) (2)
Group-III nitride nanoparticles - synthesis and photoluminescence studies (2003) (1)
ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING (2004) (1)
High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells (2017) (1)
Generation of coherent acoustic phonons in GaN‐based p‐n junction (2004) (1)
Chapter 3 – Field Effect Transistors: FETs and HEMTs (2000) (1)
<formula formulatype="inline"><tex Notation="TeX">$f_{T}$</tex></formula> and <formula formulatype="inline"><tex Notation="TeX">$f_{\rm MAX}$</tex></formula> of 47 and 81 <emphasis emphasistype="roman">GHz </emphasis>, Respectively, on N-Polar GaN/AlN MIS-HEMT (2009) (1)
High speed devices (2010) (1)
Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation (2000) (1)
GaN characterizations using femtosecond optical pulses (1999) (1)
Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N (2017) (1)
60Co gamma-irradiation-induced defects in MOCVD n-GaN (2001) (1)
Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates (2022) (1)
Identification of Carbon-related Bandgap States in GaN Grown by MOCVD (2003) (1)
High performance heterojunction InGaAs/InP JFET grown by MOCVD using tertiarybutylphosphine (TBP) (1992) (1)
Ga/sub 0.51/In/sub 0.49/P channel MESFET (1993) (1)
Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence (2000) (1)
Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors (2015) (1)
Deep Levels in n-Type Schottky and p + -n Homojunction GaN Diodes (1999) (1)
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. (2020) (1)
SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy (2020) (1)
Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands (2002) (1)
Manufacturable 200GHz, Low Noise P+-GaInAs/N-AlInAs/GaInAs JHEMT Technology (1995) (1)
High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications (2020) (1)
High Speed Heterojunction JFETs Grown by Non-Hydride MOCVD (1993) (1)
Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure (2000) (1)
Effect of very low power inductively coupled plasma etching on ohmic contacts to p-GaN (2010) (1)
Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN:C and their Influence on Yellow Luminescence (2004) (1)
Transient wavefunction analysis of a phononic bandgap nano-crystal (2006) (1)
Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs (2011) (1)
Optical Characteristics Of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated By Excitation Energy Dependent Pl And Ple Spectroscopy (1998) (1)
Comparison of spontaneous and stimulated emission from UV-blue photonic materials (1999) (1)
Thermal conductivity of low-temperature-grown GaAs (1999) (1)
Charge transport in materials (2008) (1)
High frequency, high breakdown AlInAs/GaInAs junction modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD (1993) (1)
GaN-Based RF Power Devices and Amplifiers Gallium nitride power transistors can operate at millimeter wave and beyond to meet future needs of cell phones, satellites, and TV broadcasting. (2008) (1)
Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells (1998) (1)
Design of composite channels for optimized transport in nitride devices (2003) (1)
GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate (2023) (1)
Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise (2022) (1)
Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) (2016) (1)
Virtual-Source Modeling of N-polar GaN MISHEMTS (2019) (1)
Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices (2019) (1)
Characteristics of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT's with n-and p-channel doping (1993) (1)
High T c YBa 2 Cu 3 O 7−x Thin Films on GaAs-Based Substrate Using MgO Buffer Layers with Sb Passivation Technique 1 (1992) (1)
A new FET-based integrated circuit technology: the SASSFET (1996) (1)
GaN HEMT geometry and piezoelectric quantum 1/f noise (2004) (1)
Intrinsic mobility limits in polarization induced two-dimensional electron gases (2001) (1)
Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization (2018) (1)
Electron transport in nitrogen‐polar high electron mobility transistors (2009) (1)
Anomalous drain current–voltage characteristics in AlGaN/GaN MODFETs at low temperatures (2000) (1)
AlGaN-GaN HEMTs and HBTs for microwave power (2000) (1)
Microstructural, pyroelectric and energy storage performance of rare earth doped Ba0.15 R0.70 Ca0.15 Zr0.1Ti0.9 O3 (R=Ce, La & Gd) lead-free ceramics (2019) (1)
Effect of epitaxial layer design on the microwave performance of high electron mobility transistors (1986) (1)
GaN HEMTs: material, device, circuit technology and applications (2004) (1)
Lateral oxide current aperture for InP-based vertical electron current flow devices: Demonstration using RTD's (1997) (1)
Tera-hertz acousto-electric modulation in piezoelectric InGaN/GaN quantum wells using nano acoustic waves (2003) (1)
Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures (2007) (1)
Nonlinear optical spectroscopy of band tail states in highly excited InGaN (1999) (1)
Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs (2008) (1)
Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD (1996) (1)
35 GHz f/sub max/ InP JFET grown by non-hydride MOCVD (1993) (1)
Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple (2006) (1)
High Voltage GaN HEMTs (1999) (1)
Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates (2008) (1)
GaN FEA diode with integrated anode (2002) (1)
Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction (1999) (1)
3D Characterization Study of High-k Dielectric on GaN Using Atom Probe Tomography (2013) (1)
Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells (1998) (1)
Demonstration of Low ON-Resistance CAVETS with Ammonia MBE Grown Active p-GaN Layer as the Current Blocking Layer for High Power Applications (2012) (1)
Study of Transport Through Low-Temperature GaAs Surface Insulator Layers (1991) (1)
"S-Shaped" Temperature Dependent Emission Shift and Carrier Dynamics in MOCVD-Grown InGaN/GaN Multiple Quantum Wells (1998) (1)
Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy (2013) (1)
A scanning tunneling microscopy study of low-temperature grown GaAs (1993) (1)
Deep levels in n-type Schottky and p+-n homojunction GaN diodes (2000) (1)
Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride. (2021) (1)
On the interface resistance of regrown GaInAs on InP (1995) (1)
Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films (2007) (1)
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs (2021) (1)
Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates (2010) (1)
Measurement of the hot electron mean free path in GaN (2015) (1)
A Gate Breakdown Mechanism in Mesfets and HEMTs (1991) (1)
Junctions in Semiconductors: P-N Diodes (2008) (1)
Proceedings 2000 IEEE/CornelI Conference on High Performance Devices (2000) (1)
reshold Uniformity, Millimeter-Wave (1995) (1)
P-GaN/AlGaN/GaN high electron mobility transistors (2002) (1)
Direct‐current and radio‐frequency characterization of submicron striped‐channel field effect transistor structures using focused ion beam and electron‐beam lithography (1992) (1)
V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band (2008) (1)
Integrated non-III-nitride/III-nitride tandem solar cell (2011) (0)
Fabrication and characterization of GaN junction field effect transistors (2000) (0)
Fabrication of AlGaN-GaN-InN High Electron Mobility Transistors (2003) (0)
High frequency, high breakdown AlInAs/GaInAs junction modulated hemts (JHEMTs) with regrown ohmic contacts by MOCVD (1993) (0)
Ultrafast Hole Capture Dynamics in Mg-doped GaN Thin Films (2002) (0)
AlGaN (cid:213) GaN current aperture vertical electron transistors with regrown channels (2004) (0)
Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films (2021) (0)
Depletion mode Al/sub 2/O/sub 3//GaAs MOSFETs with high current density (1997) (0)
Fabrication and Characterization of GaN Junctionfield Effect Transistors (1999) (0)
Monte Carlo study of noise scaling in AlGaN / GaN HFETs (2005) (0)
Non-Cesiated Solid State Electron Emitters (Cold Cathodes) & Their Applications in Vacuum Microelectronics (1999) (0)
Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition (2013) (0)
Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development (2010) (0)
Large Schottky barriers and memory operation for Ni/p-GaN contacts (1999) (0)
Deformation potential scattering from dislocations in III-V nitride quantum wells (2001) (0)
Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation (2006) (0)
Commercialization of 600 V GaN HEMTs (2014) (0)
A Novel mm-Wave Heterojunction JFET Technology with Suppressed Hole Injection. (1995) (0)
Uncooled RF Electronics for Airborne Radar. AlGaN/GaN HEMT Structure Development by MBE (1999) (0)
Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers (2009) (0)
Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges (2023) (0)
1.55 /spl mu/m absorption, high speed, high saturation power p-i-n photodetectors using low-temperature grown GaAs (1998) (0)
A study of two-dimensional effects in metal/tunnel-oxide/ N/P+ silicon switching devices. (1980) (0)
Chapter 3 - Unipolar InP-Based Transistors (1994) (0)
Electronic Applications of GaN Devices (1998) (0)
Preface: phys. stat. sol. (c) 5/6 (2008) (0)
Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM (2022) (0)
Materials, Device and Circuit Properties of AlInAs-GaInAs HEMTs (1991) (0)
Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants (1998) (0)
Wafer Cleaning and Pre-Bonding Module for Wafer Bonding (2007) (0)
Technical program (2020) (0)
Nonlinear piezoelectric effect in InGaN/GaN quantum wells revealed at high pressures (2001) (0)
Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits (2004) (0)
Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm gm and 0.76 Ω-mm Ron (2011) (0)
Gain spectroscopy in lnGaN/GaN quantum well diodes (1997) (0)
Uncooled RF Electronics for Airborne Radar (2003) (0)
Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged by cathodoluminescence microscopy (2003) (0)
Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2006) (0)
Coplanar waveguide InP-based HEMT MMICs for microwave and millimeter wave applications (1991) (0)
First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz (2023) (0)
Proton-Induced Damage in Gallium Nitride-Based (2005) (0)
Erratum for ‘X-band power performance of N-face GaN MIS-HEMTs’ (2011) (0)
Anti Reflection (AR) Coating for Indium Gallium Nitride InGaN Solar Cells (2012) (0)
Short-Circuit Capability with GaN HEMTs : Invited (2022) (0)
High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates (2006) (0)
The Study of the Materials Properties of LTG (Al) GaAs and its Electronic and Opto-Electronic Device Applications. (1995) (0)
Growth of human embryonic kidney cells on AlGaN/GaN heterostructures for biosensor applications (2010) (0)
Ultrafast carrier dynamics in GaN bandtail states (1999) (0)
Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs (2008) (0)
Si doping effects on the electrical and structural properties of high Al composition AlxGa1−xN films grown by MOCVD (2003) (0)
The Impact of Low Temperature Materials on the Breakdown and Noise Properties of GaAs and InP Based Hemt's and FET's (1994) (0)
Record power-added efficiency using GaAs on insulator MESFET technology (1998) (0)
Temporal Response Of Diodes and Bipolar Transistors (2008) (0)
AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE (2007) (0)
Bipolar Junction Transistors (2008) (0)
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs (2023) (0)
ZnO cone-shaped blue light emitting diodes (2008) (0)
Magnetoresistance characteristics of gamma-irradiated Al0.35 Ga0.65 N/GaN HFETs (2004) (0)
Reduction of short channel effects in self-aligned AlInAs/GaInAs HEMTs by lateral bandgap engineering for high f/sub max/ (1997) (0)
Characterization and Discrimination of AlGaN‐ and GaN‐related Deep Levels in AlGaN/GaN Heterostructures (2007) (0)
High electron mobility 2DEG in AlGaN/GaN structures (1999) (0)
Similarities in the optical properties of hexagonal and cubic InGaN quantum wells (2001) (0)
Analysis of in-situ etched and regrown {AlInAs}/{GaInAs} interfaces (1997) (0)
Vacuum Microelectronic Emitters and Their Applications Using Compound Semiconductor Technology (1994) (0)
Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGAN Films Using Prism-Coupling Techniques Correlated With Spectroscopic Reflection/Transmission Analysis | NIST (2002) (0)
A novel electron emitter with AlGaAs planar doped barrier (1992) (0)
Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)] (2010) (0)
Controlling electronic properties of wafer-bonded interfaces among dissimilar materials: A path to developing novel wafer-bonded devices (2013) (0)
Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors (2011) (0)
Triangular pattern formation on silicon through self-organization of gan nanoparticles (2007) (0)
System for Bulk Growth of Gallium Nitride. Vapor Phase Epitaxy of Gallium Nitride by Gallium Arc Evaporation (2005) (0)
Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction[Metal Organic Chemical Vapor Deposition] (2000) (0)
Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures (2002) (0)
Surface charge layer effects on ion sensitivity of AlGaN/GaN heterostructure sensors (2010) (0)
Impact of CF4 plasma treatment on GaN - eScholarship (2007) (0)
Anomalous pressure dependence of emission in Si-doped InGaN/GaN quantum wells (2000) (0)
Current Apertured Vertical Electron Transistor (CAVET) (2001) (0)
MOCVD growth of InGaN multiple quantum well LEDs and laser diodes (1998) (0)
Preface: phys. stat. sol. (c) 7/10 (2010) (0)
High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE (2009) (0)
Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α = 0.97 (2010) (0)
Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN (2003) (0)
MOCVD growth and fabrication of group-Ill nitrides for high-efficiency MQW LEDs (1997) (0)
Oxide based electronics in GaAs (1998) (0)
New Electronic Device Opportunities Afforded by GaN-based materials (1999) (0)
OSA proceedings on Ultrafast Electronics and Optoelectronics, volume 14 (1993) (0)
A . 1 Assessment of Distributed-Cycling Schemes on 45 nm NOR Flash Memory Arrays (2012) (0)
0 Dislocation scattering in a two dimensional electron gas (2000) (0)
InGaAs/GAs Planar Doped Barrier Electron Emitters (1992) (0)
AFOSR Wafer Bonding (2009) (0)
Gallium Nitride... The next semiconductor revolution (2013) (0)
LT (Al)GaAs and Al(Ga)As/AlAsSb oxides for electronic applications (2002) (0)
ed Highly Reliable GaN HEMTs on Si S (2014) (0)
Impact of step edges on trapping behavior in N-polar GaN HEMTs (2011) (0)
Coherent Transport and Mesoscopic Devices (2008) (0)
1/f Noise in GaN/AlGaN HFET Based Amplifiers (2005) (0)
Compound semiconductors 1994 : proceedings of the Twenty-First International Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994 (1995) (0)
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage (2020) (0)
Ultra-low ohmic contacts to N-polar GaN HEMTs by In ( Ga ) N based source-drain regrowth by Plasma MBE (2010) (0)
Investigation of the Electronic and Structural Properties of Oxidized-A1As/GaAs Interfaces (1999) (0)
Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD (1995) (0)
Deep Level States in P-type GaN Grown by Ammonia-based Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition (2015) (0)
Pressure Studies in InGaN/GaN Quantum Wells (2001) (0)
Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate (2022) (0)
Study of the I–V characteristics of planar‐doped‐barrier electron emitters (1994) (0)
AlGaN/GaN HEMTs on Semi-Insulating GaN Substrates by MOCVD and MBE (2007) (0)
Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier (2008) (0)
Publisher’s Note: “Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” [Appl. Phys. Lett. 85, 5254 (2004)] (2005) (0)
Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain (2012) (0)
N-polar GaN Electronics (2007) (0)
Transport in Metal-Nitride Heterostructure Junctions - A self consistent drift-diffusion-charge-control model (2003) (0)
Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N (2022) (0)
Fabrication and characterization of N-face AlGaN/GaN/AlGaN HEMTs (2005) (0)
Electrostatic tuning between 1-dimensional and 2-dimensional electron gases (2012) (0)
Charge trapping centres in /spl gamma/-irradiated Gallium Nitride grown by MOCVD (2000) (0)
High power novel heterojunction JFETs (HJFETs) grown by MOCVD (1993) (0)
Consequences of Alloy clustering on carrier Localization and Radiative Efficiency in InGaN/GaN light emitters (2002) (0)
Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT (2006) (0)
Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply (2023) (0)
Center for the Radiation Studies and Solutions (1999) (0)
Planar cold cathodes (1993) (0)
The effect of an oxide aperature on the base-collector capacitance of a GaAs heterojunction bipolar transistor (1999) (0)
IIIA-9 High Frequency, High Breakdown Al- InAs /GaInAs Junction Modulated HEMT's (JHEMT's) with Regrown Ohmic Contacts by (1993) (0)
Electron transport in two-dimensional electron gases of nitride heterostructures (2001) (0)
“Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]” (2012) (0)
Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation (2006) (0)
The Output Conductance in GaAs Air-Gap MESFETs (1992) (0)
High Power Broadband Amplifiers for 1-18 GHz Naval Radar (2002) (0)
Tailorable Rectification: A study of Vertical Transport in AlGaN/GaN Heterostructures (2001) (0)
Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs (2021) (0)
N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization (2023) (0)
50 nm AlGaN/GaN HEMT Technology for mm-wave Applications (2006) (0)
Optoelectronic devices (2011) (0)
N-Face GaN-Based Microwave Metal-Insulator-Semiconductor High Electron Mobility Transistors by Plasma-Assisted Molecular Beam Epitaxy (2010) (0)
Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction (2019) (0)
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) (2019) (0)
An examination of tunnel junctions in AlGaN/GaN Structures: Consequence of polarization effects (2000) (0)
Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures (1999) (0)
Status and promise of InP electronics (1995) (0)
Tuning piezoelectric fields in InGaN/GaN quantum wells (2001) (0)
First demonstration of Aluminum gallium nitride (AlGaN) - Gallium nitride (GaN) superlattice (SL) based p-channel field effect transistor (2019) (0)
Effects of a pseudomorphic InGaAs layer on focused ion‐beam modulation doped GaAs–AlGaAs quantum well structures (1992) (0)
Power GaN-based Microwave Devices for Wireless Communications (2001) (0)
High-speed electronics and optoelectronics : 26 March 1992, Somerset, New Jersey (1992) (0)
InGaN/GaN field emitters with a piezoelectrically-lowered surface barrier (1998) (0)
Effect of polarisation on solar-blind AlGaN/GaN UV photodiodes (2002) (0)
Flow modulation epitaxy of GaxIn1-xAs/AlAs heterostructures on InP for resonant tunneling diodes (1994) (0)
atedA GaN/GaN HEMTs (2009) (0)
Effects of Band Tail Absorption on AlGaN‐Based Ultraviolet Photodiodes (2001) (0)
Blue InGaN MQW laser diodes on sapphire (1998) (0)
Proceedings of the International Symposium on Compound Semiconductors (21st) Held in San Diego, California on 18-22 September 1994, (1994) (0)
Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15-um gate length (1990) (0)
Pulsed operation of (Al,Ga,In)N blue laser diodes (1998) (0)
IMIRIS Internet N i t r i de of Semiconductor Research A GaN/4H-SiC Heterojunction Bipolar Transistor with Operation up to 300°C Novel Approach to Simulation of Group-Ill Nitrides Growth by MOVPE (2013) (0)
Device-scaling constraints based upon delay-time arguments (1990) (0)
Characterization of (Al,Ga,In)N grown using lateral epitaxial overgrowth. Annual report (1998) (0)
MOCVD Growth and Properties of Thin Al,Ga,-,N Layers on GaN (1999) (0)
Nonpolar Nitride Heterostructures and Devices grown by MOCVD (2008) (0)
Highly selective GaN/AlGaN/GaN UV photodiodes (2000) (0)
Recent and forthcoming publications in pss (2016) (0)
High Power, High Efficiency MESFETs and HEMTs. (1995) (0)
Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands (2023) (0)
A method of joining slices of (Al, In, Ga) N and Zn (S, Se) for optoelectronic applications (2005) (0)
Picosecond carrier transport and capture for InGaN/GaN single and multiple quantum wells (1999) (0)
Low Noise Amplifiers Based on Lattice Engineered Substrates (2004) (0)
Effects of spontaneous and piezoelectric polarisation on the photoresponsivity Of Ga- and N-faced AlGaN UV photodiodes (2001) (0)
Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD (2002) (0)
A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element (1985) (0)
(Invited) Fabrication of N-Polar (Al,Ga,In)N Heterostructures for Transistor Applications (2015) (0)
Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors (2003) (0)
Interface Control of III-Oxide/Nitride Composite Structures (2012) (0)
Ultrafast electron dynamics and intervalley scattering in GaN (1998) (0)
Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE (2022) (0)
Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures (1999) (0)
Characterization of InGaN/GaN lasing structures for high temperature device applications (1998) (0)
GaN electronics for microwave power applications (1997) (0)
Long wavelength GaN blue laser (400-490nm) development (2000) (0)
Manufacturing study of yield and performance dependence on gate length of submicron AlInAs-GaInAs HEMTs (1993) (0)
Selectively regrown ohmic contacts for high frequency and low noise FETs (1995) (0)
Invited Electronic Applications of GaN Devices (2008) (0)
Invited MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors (0)
Production of a self-aligned T-gate HEMT (1990) (0)
Wideband Transferred-Substrate AlGaN-GaN Heterojunction Bipolar Transistors for Microwave Power Applications (2001) (0)
Effect of AlN nucleation layer growth conditions on buffer leakage in high electron mobility transistors grown by molecular beam epitaxy ( MBE ) (2005) (0)
Nitride Transistors for Beyond-Si Digital Electronics (2008) (0)
High Performance InGaN-Based Solar Cells (2012) (0)
MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors (1999) (0)
Center for Non-Stoichiometric Semiconductors (2000) (0)
Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k (1998) (0)
III-nitride strain relaxation enabled by porous GaN for optoelectronic applications (2021) (0)
Optical and thermal properties of In12Ga88N/GaN solar cells (2009) (0)
Defense Technical Information Center Compilation Part Notice ADP 015066 (0)
MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices (1997) (0)
Inductively Coupled Plasma System (ICP) (2001) (0)
Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides (1999) (0)
Comparison of deep level spectra in p‐type and n‐type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)] (2007) (0)
VIB-3 permeable base transistor - A new technology (1982) (0)
The science, technology and impact of gallium nitride-based transistors (2001) (0)
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An EHF Coplanar Monolithic Single Balanced Mixed using Mott Diodes (1985) (0)

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What Schools Are Affiliated With Umesh. K. Mishra?

Umesh. K. Mishra is affiliated with the following schools:

University of California, Santa Barbara