Veena Misra
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Electrical Engineer
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Electrical Engineering
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Engineering
Veena Misra's Degrees
- Bachelors Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- PhD Electrical Engineering Stanford University
Why Is Veena Misra Influential?
(Suggest an Edit or Addition)According to Wikipedia, Veena Misra is an academic electrical engineer whose research has spanned a range of scales from forming individual circuit components out of semiconductors to wearable technology. She is MC Dean Distinguished University Professor at North Carolina State University, and interim head of the university's Department of Electrical and Computer Engineering.
Veena Misra's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics (1999) (159)
- Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease (2016) (131)
- Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing (2015) (128)
- A capacitance-based methodology for work function extraction of metals on high-/spl kappa/ (2004) (108)
- Plasmonic Nanoparticles and Nanowires: Design, Fabrication and Application in Sensing. (2010) (105)
- Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications (2002) (87)
- Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric (2009) (85)
- Flexible thermoelectric generators for body heat harvesting – Enhanced device performance using high thermal conductivity elastomer encapsulation on liquid metal interconnects (2020) (81)
- Issues in High-ĸ Gate Stack Interfaces (2002) (80)
- Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2 (2001) (78)
- Mobile health: the power of wearables, sensors, and apps to transform clinical trials (2016) (77)
- Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS (2002) (75)
- A simple parameter extraction method for ultra-thin oxide MOSFETs (1995) (74)
- Encapsulation of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposition (2010) (68)
- Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics (2001) (59)
- Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC (2010) (58)
- Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory (2011) (57)
- Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS (2000) (55)
- Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces. (2004) (55)
- Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications (2003) (54)
- Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films (1996) (54)
- Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications (2015) (53)
- Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces. (2004) (51)
- Porphyrin architectures tailored for studies of molecular information storage. (2004) (51)
- Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices (2001) (51)
- Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates (2010) (49)
- Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs (1996) (46)
- High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric (2009) (44)
- Multiple-bit storage properties of porphyrin monolayers on SiO2 (2004) (43)
- Robust ternary metal gate electrodes for dual gate CMOS devices (2001) (42)
- Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal–oxide–semiconductor field effect transistors–low temperature electron mobility study (2007) (41)
- Molecular sentinel-on-chip for SERS-based biosensing. (2013) (41)
- Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to si(100). (2004) (40)
- Synthesis and Film-Forming Properties of Ethynylporphyrins (2005) (40)
- Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices (2015) (36)
- Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag (2014) (36)
- Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications (2010) (36)
- Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis (2002) (34)
- Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs (2012) (33)
- Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics (1999) (33)
- Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices (2001) (32)
- Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition (1999) (32)
- Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation (2009) (32)
- Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy (2006) (31)
- Methodologies for Developing Surface-Enhanced Raman Scattering (SERS) Substrates for Detection of Chemical and Biological Molecules (2010) (31)
- Tunable work function dual metal gate technology for bulk and non-bulk CMOS (2002) (31)
- Flexible thermoelectric generator with liquid metal interconnects and low thermal conductivity silicone filler (2021) (31)
- Compatibility of dual metal gate electrodes with high-k dielectrics for CMOS (2003) (30)
- Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric (2008) (29)
- Study of low-frequency charge pumping on thin stacked dielectrics (2001) (29)
- Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation (2013) (29)
- Hybrid top-down and bottom-up fabrication approach for wafer-scale plasmonic nanoplatforms. (2011) (28)
- Work function tuning of nickel silicide by co-sputtering nickel and silicon (2005) (28)
- Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics (2010) (28)
- Effect of the composition on the electrical properties of TaSi/sub x/Ny metal gate electrodes (2003) (27)
- Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks (2000) (26)
- Sub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memory (2009) (26)
- Work Function Tuning Via Interface Dipole by Ultrathin Reaction Layers Using AlTa and AlTaN Alloys (2006) (24)
- Electrical Characteristics of HfO2 Dielectrics with Ru Metal Gate Electrodes (2005) (24)
- Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric (2008) (24)
- Ultimate scalability of TaN metal floating gate with incorporation of high-K blocking dielectrics for Flash memory applications (2010) (23)
- Low-Frequency Noise Measurements of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric (2010) (23)
- Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition (1996) (23)
- Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures (2010) (21)
- High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2 (2015) (21)
- Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics (2001) (18)
- Properties of functionalized redox-active monolayers on thin silicon dioxide-a study of the dependence of retention time on oxide thickness (2005) (18)
- Stability of Ru‐ and Ta‐based metal gate electrodes in contact with dielectrics for Si‐CMOS (2004) (18)
- Electrical Characteristics of TaSi,N,, Gate Electrodes For Dual Gate Si-CMOS Devices (2001) (17)
- High performance 20 /spl Aring/ NO oxynitride for gate dielectric in deep subquarter micron CMOS technology (1997) (17)
- Properties of Ta–Mo alloy gate electrode for n-MOSFET (2005) (17)
- Investigation of the Origin of $V_{T}/V_{\rm FB}$ Modulation by $\hbox{La}_{2}\hbox{O}_{3}$ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- $k$ Layer, and Interface Properties (2011) (16)
- Atomic Layer Deposition of SnO2 for Selective Room Temperature Low ppb Level O3 Sensing (2015) (16)
- Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices (2004) (16)
- Redox-active monolayers on nano-scale silicon electrodes (2005) (16)
- Large-area long-range ordered anisotropic magnetic nanostructure fabrication by photolithography (2006) (16)
- Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage (2012) (15)
- Electrical characteristics of TaSi/sub x/N/sub y/ gate electrodes for dual gate Si-CMOS devices (2001) (15)
- Thermal Stability of TaSi x N y Films Deposited by Reactive Sputtering on SiO2 (2003) (14)
- Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory (2015) (14)
- Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates (2007) (14)
- Large area nanorings fabricated using an atomic layer deposition Al2O3 spacer for magnetic random access memory application (2008) (13)
- Long-term particle flux variability indicated by comparison of Interplanetary Dust Experiment (IDE) timed impacts for LDEF's first year in orbit with impact data for the entire 5.75-year orbital lifetime (1992) (13)
- Evaluation of Fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO/sub 2/ under high temperature exposure (2004) (13)
- A molecular memory device formed by HfO2 encapsulation of redox-active molecules (2007) (13)
- Hybrid silicon/molecular FETs: a study of the interaction of redox-active molecules with silicon MOSFETs (2006) (13)
- Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal (2016) (12)
- Physical and electrical analysis of RuxYy alloys for gate electrode applications (2005) (12)
- Elemental Analyses of Hypervelocity Microparticle Impact Sites on Interplanetary Dust Experiment Sensor Surfaces (1992) (12)
- High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2 (2014) (12)
- Electrical and Physical Analysis of MoTa Alloy for Gate Electrode Applications (2006) (12)
- A simulation study to evaluate the feasibility of midgap workfunction metal gates in 25 nm bulk CMOS (2003) (11)
- Impact of ALD Gate Dielectrics (SiO2, HfO2, and SiO2/HAH) on Device Electrical Characteristics and Reliability of AlGaN/GaN MOSHFET Devices (2011) (11)
- An advanced MOSFET design approach and a calibration methodology using inverse modeling that accurately predicts device characteristics (1997) (11)
- Dependence of pmos metal work functions on surface conditions of high-k gate dielectrics (2005) (11)
- Thin oxynitride film metal‐oxide‐semiconductor transistors prepared by low‐pressure rapid thermal chemical vapor deposition (1993) (11)
- Characterization of Thin Silicon Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition (1993) (11)
- Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics (2015) (10)
- Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications (2005) (10)
- Modulation of drain current by redox-active molecules incorporated in Si MOSFETs (2004) (10)
- ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications (2015) (10)
- Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide (1995) (10)
- Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application (2012) (9)
- Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors (2012) (9)
- High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide (1996) (9)
- The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon (2007) (8)
- Integration of Plasma-Assisted and Rapid Thermal Processing for Low-Thermal Budget Preparation of Ultra-Thin Dielectrics for Stacked-Gate Device Structures (1994) (8)
- Hybrid silicon/molecular memories: co-engineering for novel functionality (2003) (8)
- Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application (2005) (8)
- Formation of Si–SiO2 stacked‐gate structures by plasma‐assisted and rapid‐thermal processing: Improved device performance through process integration (1994) (7)
- Electrical properties of composite gate oxides formed by rapid thermal processing (1996) (7)
- A high performance 3.97 /spl mu/m/sup 2/ CMOS SRAM technology using self-aligned local interconnect and copper interconnect metallization (1998) (7)
- Schottky Barrier Height of Erbium Silicide on $ \hbox{Si}_{1 - x}\hbox{C}_{x}$ (2009) (7)
- Effects of halo implant on hot carrier reliability of sub-quarter micron MOSFETs (1998) (7)
- On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process (2018) (7)
- Platinum Germanosilicide Contacts Formed on Strained and Relaxed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Layers (2009) (7)
- Hybrid CMOS/molecular memories using redox-active self-assembled monolayers (2003) (7)
- Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics (2011) (7)
- Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels (2005) (7)
- Interfacial Properties of Si-Si 3 N 4 formed by Remote Plasma Enhanced Chemical Vapor Deposition (1999) (7)
- Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100) (2015) (7)
- Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs (2016) (7)
- Influence of oxygen diffusion through capping layers of low work function metal gate electrodes (2006) (7)
- Characteristics of Ni/Gd FUSI for NMOS Gate Electrode Applications (2007) (7)
- Implications of Lower Zero-Field Activation Energy of Dielectric in Al2O3/HfO2 Bi-Layer Dielectric RRAM Forming Process (2014) (6)
- Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing (2015) (6)
- Fabrication of large area nano-rings for MRAM application (2008) (6)
- Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure (2004) (6)
- Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric (2006) (6)
- High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes (2006) (6)
- Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric (2008) (6)
- Measurements of generation‐recombination effect by low‐frequency phase‐noise technique in AlGaN/GaN MOSHFETs (2011) (6)
- Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal (2018) (6)
- Impact of Gd dopants on current polarization and the resulting effect on spin transfer velocity in Permalloy wires (2011) (6)
- Room temperature ozone and humidity response evolution of atomic layer deposited SnO2 sensors (2017) (5)
- Ultra-low power sensing platform for personal health and personal environmental monitoring (2015) (5)
- A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs (2014) (5)
- Erbium Silicide Formation on Si1 − x C x Epitaxial Layers (2009) (5)
- Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies (1994) (5)
- Development of plasmonics-active SERS substrates on a wafer scale for chemical and biological sensing applications (2008) (5)
- Promising Gate Stacks with Ru a RuO 2 Gate Electrodes and Y-silicate Dielectrics (2001) (4)
- Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs (2013) (4)
- Room temperature sensing of VOCs by atomic layer deposition of metal oxide (2016) (4)
- MOS Device Characterization (2001) (4)
- Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability (2017) (4)
- Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric (2013) (4)
- 3 – Field Effect Transistors (2005) (4)
- N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics (2001) (4)
- Optimizing the energy balance to achieve autonomous self-powering for vigilant health and IoT applications (2019) (4)
- Effects of barrier height (/spl Phi//sub B/) and the nature of bi-layer structure on the reliability of high-k dielectrics with dual metal gate (Ru & Ru-Ta alloy) technology (2004) (4)
- Energy splitting of the EL2 level in Si‐implanted GaAs/GaAs by field‐effect deep‐level transient spectroscopy (1993) (4)
- A manufacturable and modular 0.25 /spl mu/m CMOS platform technology (1998) (3)
- Multivalued Logic Using a Novel Multichannel GaN MOS Structure (2011) (3)
- Deposited Gate Dielectrics (2001) (3)
- Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions (2020) (3)
- A Pipeline for Adaptive Filtering and Transformation of Noisy Left-Arm ECG to Its Surrogate Chest Signal (2020) (3)
- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 -and- Tutorials in Nanotechnology: Dielectrics in Nanosystems | NIST (2011) (3)
- Investigation of Thermal Stability of High-kappa Interpoly Dielectrics in TaN Metal Floating Gate Memory Structures (2011) (3)
- Atomic Layer Deposition of Hafnium Dioxide on TiN and Self-Assembled Monolayer Molecular Film (2009) (3)
- Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices (2008) (3)
- A novel double floating-gate unified memory device (2012) (3)
- A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering (1999) (3)
- Design and fabrication of high current AlGaN/GaN HFET for Gen III solid state transformer (2014) (3)
- Optimization of a 0.18 /spl mu/m 1.5 V CMOS technology to achieve 15 ps gate delay (1998) (3)
- Building Blocks of a New ALD E-Nose - A First Step: N-Type and P-Type ALD Sensors (2018) (2)
- Multidisciplinary Undergraduate Minor Program in Nano-Science and Technology at North Carolina State University (2014) (2)
- Integration issues with high k gate stacks (2003) (2)
- N-channel and P-channel MOSFETs with oxynitride gate dielectrics formed using low pressure rapid thermal chemical vapor deposition (1995) (2)
- Secondary ion mass spectrometry (SIMS) analysis of hypervelocity microparticle impact sites on LDEF surfaces (1995) (2)
- Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center (2006) (2)
- Self-powered wearable sensor platforms for wellness (2015) (2)
- Characterization of Oxygen-Doped and Non-Oxygen-Doped Polysilicon Films Prepared by Rapid Thermal Chemical Vapor Deposition (1993) (2)
- Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer (2011) (2)
- Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties (2008) (2)
- Work function extraction of metal gates with alternate channel materials (2012) (2)
- On the mobility of n‐channel metal–oxide–semiconductor transistors prepared by low‐pressure rapid thermal chemical vapor deposition (1995) (2)
- Integrated processing of stacked-gate heterostructures: plasma-assisted low temperature processing combined with rapid thermal high-temperature processing (1994) (2)
- Investigation of O 3 Adsorption on Ultra-Thin ALD SnO 2 by QCM (2018) (2)
- Gate Oxides: Properties and Characterization (2001) (2)
- Estimation of Beat-to-Beat Interval from Wearable Photoplethysmography Sensor on Different Measurement Sites During Daily Activities (2018) (2)
- Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO2 (2018) (2)
- Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric (2018) (2)
- Approach for investigating lateral conduction in self-assembled monolayers (2005) (1)
- Noise Analysis of MOSFET's with Ultra Thin Silicon Oxinitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition (LPRTCVD) (1995) (1)
- Investigation of intermediate dielectric for dual floating gate MOSFET (2013) (1)
- Memristive behavior in BaTiO 3 /La 0.7 Sr 0.3 MnO 3 heterostructures integrated with semiconductors (2016) (1)
- Understanding the influence of Ea and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM (2015) (1)
- Thermal Stability Studies of Advanced Gate Stack Structures on Si (100) (2005) (1)
- Threshold voltage-assisted reduction of molecules in hybrid silicon/molecular memory devices (2005) (1)
- An 88.6nW ozone pollutant sensing interface IC with a 159 dB dynamic range (2020) (1)
- Sensors Research at the NSF-Assist Nanosystems Engineering Research Center:Correlated Sensing of Environmental and Physiological Parameters Using Low-Power Wearable Sensors (2014) (1)
- A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO 2 Gate Dielectrics (2006) (1)
- Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs (2011) (1)
- Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation (2014) (1)
- Low‐temperature plasma‐assisted oxidation combined with insitu rapid thermal oxide deposition for stacked‐gate Si–SiO2 heterostructures: Integrated processing and device studies (1994) (1)
- Flash MOS‐HFET operational stability for power converter circuits (2014) (1)
- Wearable skin vapor sensing system for continuous monitoring of various health and lifestyles (2021) (1)
- Effects of gate electrodes and barrier heights on the breakdown characteristics and Weibull slopes of HfO/sub 2/ MOS devices (2004) (1)
- Effect of post deposition annealing for high mobility 4H-SiC MOSFET utilizing lanthanum silicate and atomic layer deposited SiO2 (2014) (1)
- Fabrication of novel plasmonics-active substrates (2009) (1)
- A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application (2015) (1)
- Ni/sub x/Ta/sub 1-x/Si and Ni/sub x/Pt/sub 1-x/Si ternary alloys for work function tuning on SiO/sub 2/, HfSiO/sub x/ and HfO/sub 2/ dielectrics (2005) (1)
- Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-$k$ PMOS Application (2011) (1)
- Towards the Fabrication of Ultra-Thin SOI on Si (001) using Epitaxial Oxide and Epitaxial Semiconductor Growth Processes (2006) (1)
- Deposition of ultra-thin oxide dielectrics for MOSFETs by a combination of low-temperature plasma-assisted oxidation, and intermediate and high-temperature rapid thermal processing☆ (1995) (1)
- Suppression of dielectric crystallization on metal by introduction of SiO2 layer for metal floating gate memory blocking oxide (2011) (1)
- Simultaneous Monitoring of ECG and EDA Using a Wearable Armband for Analyzing Sympathetic Nerve Activity (2021) (1)
- Control of Si-SiO 2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes (1993) (1)
- Highly Sensitive ALD SnO2 Sensors and the Role of its Thickness in Gas Sensing Capabilities (2018) (1)
- Selective Removal of Silicon-Germanium: Chemical and Reactive Ion Etching (1993) (1)
- High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability (2014) (1)
- Critical thickness of heavily boron-doped silicon-germanium alloys (2006) (1)
- Electrical Properties of Stacked RTO/RTCVD Oxides as Gate Dielectrics (1994) (1)
- Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx (2019) (1)
- Impact of Heavy Boron Doping and Nickel Germanosilicide Contacts on Biaxial Compressive Strain in Pseudomorphic Silicon-Germanium Alloys on Silicon (2006) (0)
- A novel monolithic array of multiple metal oxide sensors for E-Nose applications via selective on-chip annealing of nanolayered ALD stacks (2019) (0)
- Characterization of Thin Silicon Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition. (2010) (0)
- Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs (2009) (0)
- (Invited) Interface Investigation of ALD Dielectrics on III-N Substrates for RF, Mixed Signal and Power Applications (2010) (0)
- Atomic Layer Deposited TiO2 thin films for environmental gas sensing (2013) (0)
- Properties of ErSi(2−x) Contacts Formed on Si(1−x)C(x) Epitaxial Layers (2009) (0)
- High-mobility enhancement-mode 4H SiC lateral nMOSFETs with atomic layer deposited Al2O3 gate dielectric (2009) (0)
- Workfunction Tuning of Nickel Silicide by Varying Nickel and Silicon Composition (2006) (0)
- Introduction to the Special Section on Electronic and Ionic Interfaces to Biomolecules and Cells (2010) (0)
- Transistors with a dielectric channel barrier layer and the associated method for their preparation (2010) (0)
- Simulation and Experimental Characterization of a Unified Memory Device with Two Floating-Gates (2012) (0)
- Transparent Non-volatile Memory using Platinum Nanocrystals Embedded in an Amorphous IGZO Thin Film Transistor (2008) (0)
- Evaluation of Environmental Enclosures for Effective Ambient Ozone Sensing in Wrist-worn Health and Exposure Trackers (2021) (0)
- The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-k Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications (2012) (0)
- Misra - Invited Speaker (2009) (0)
- Contaminant interferences with SIMS analyses of microparticle impactor residues on LDEF surfaces (1993) (0)
- NMOS Gate Electrode Selection Process for Advanced Silicon Devices (2002) (0)
- Integration of multi-level copper metallization into a high performance sub-0.25 /spl mu/m CMOS technology (1998) (0)
- The Effects of Nitrogen on Electrical and Structural Properties in TaSi x N y /SiO 2 /p-Si MOS Capacitors (2002) (0)
- Preliminary Assessment of Human Biological Responses to Low-level Ozone (2020) (0)
- Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition (1997) (0)
- Gate Quality Oxides Prepared by Rapid Thermal Chemical Vapor Deposition (1993) (0)
- NixTa1-xSi and NixPt1-xSi Ternary Alloys for Work Function Tuning on SiO2, HfSiOx and HfO2 Dielectrics (2005) (0)
- A Dual-Function UHV-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures (1993) (0)
- Performance, standby power, and manufacturability trade-off in transistor design consideration for 0.25-μm technology (1998) (0)
- Application of AlGaN/GaN Heterostructures for Ultra-Low Power, Low Noise Nitrogen Dioxide Detection (2015) (0)
- Feasibility of Dipole Based Work Function Tuning for Sub-1nm EOT Metal Gated High-K Stacks (2006) (0)
- Work Function Tuning Via Ultra Thin Charged Reaction Layers Using AlTa and AlTaN Alloys (2005) (0)
- Investigation of High-K Dielectrics on Compound Semiconductors for Applications in RF, Mixed Signal and Power Electronics (2010) (0)
- ectrieal Properties of Composite Gate s Formed by Rapid Thermal Processing (1996) (0)
- Symposium Proceedings: Symposium B, Silicon Materials - Processing Characterization and Reliability: Preface (2002) (0)
- N 93-10851 CONTAMINANT INTERFERENCES WITH SIMS ANALYSES OF MICROPARTICLE IMPACfOR RESIDUES ON LDEF SURFACES (0)
- A Wearable Electrocardiography Armband Resilient Against Artifacts (2022) (0)
- Improving Nano/Micro Porous Silicon Electrode Properties By Ultra-Thin Atomic Layer Deposited (ALD) High-k Oxide Passivation for High Energy Density Li-Ion Battery Application (2013) (0)
- Systems Level Approaches for on-Body Sensing Devices (2014) (0)
- Engineering Tunnel Barriers in Hybrid Silicon/Molecular Memory Devices (2006) (0)
- Noise Analysis of Si-MOSFET's with Gate Oxides Deposited by Low Pressure RTCVD (1994) (0)
- Investigation of O3 Adsorption on Ultra-Thin ALD SnO2 by QCM (2018) (0)
- Invited) Wearable Sensor Systems for Long Term Health and Environmental Monitoring (2017) (0)
- Thermoelectric Energy Harvesting Research at the Assist NSF Nano-Systems Engineering Research Center (2014) (0)
- Translational Engineering Skills Program (TESP): Training innovative, adaptive, and competitive graduate students for the 21st Century Work Force (2014) (0)
- Study of Ultrathin TiO 2 Metal Oxide Gas Sensor Deposited By Atomic Layer Deposition for Environmental Monitoring (2013) (0)
- ETCHING OF HIGH K GATE DIELECTRIC AND GATE METAL ELECTRODE CANDIDATES (2001) (0)
- Raman Spectroscopy Study of Uniaxial Strained SOI with SiGe Junctions (2007) (0)
- Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications (2022) (0)
- Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al 2 O 3 Gate Dielectric (2009) (0)
- On the Issue of Work Function Tuning of Nickel Silicide Gates (2006) (0)
- Metal oxide gas sensing characterization by low frequency noise spectroscopy (2016) (0)
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