Wladek Walukiewicz
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Physics
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(Suggest an Edit or Addition)Wladek Walukiewicz's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Band Anticrossing in GaInNAs Alloys (1999) (1416)
- Unusual properties of the fundamental band gap of InN (2002) (1319)
- Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system (2003) (577)
- Small band gap bowing in In1−xGaxN alloys (2002) (570)
- Effect of the location of Mn sites in ferromagnetic GaMnAs on its Curie temperature (2002) (436)
- Temperature dependence of the fundamental band gap of InN (2003) (365)
- Effects of the narrow band gap on the properties of InN (2002) (345)
- Electron mobility in modulation-doped heterostructures (1984) (343)
- Electron mobility and free‐carrier absorption in InP; determination of the compensation ratio (1979) (317)
- Valence-band anticrossing in mismatched III-V semiconductor alloys (2007) (305)
- Band anticrossing in highly mismatched III-V semiconductor alloys (2002) (294)
- Intrinsic limitations to the doping of wide-gap semiconductors (2001) (289)
- Valence band anticrossing in GaBixAs1−x (2007) (282)
- Engineering the electronic band structure for multiband solar cells. (2011) (281)
- Nature of room-temperature photoluminescence in ZnO (2005) (259)
- Diluted II-VI oxide semiconductors with multiple band gaps. (2003) (258)
- Amphoteric native defects in semiconductors (1989) (241)
- Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors (1982) (235)
- Native point defects in low‐temperature‐grown GaAs (1995) (231)
- Finite element simulations of compositionally graded InGaN solar cells (2010) (214)
- Effects of electron concentration on the optical absorption edge of InN (2004) (213)
- Nature of the fundamental band gap in GaNxP1−x alloys (2000) (211)
- Evidence for p-type doping of InN. (2005) (199)
- Fermi-level stabilization energy in group III nitrides (2005) (188)
- Raman spectroscopy and time-resolved photoluminescence of BN and BxCyNz nanotubes (2004) (181)
- Band gaps of InN and group III nitride alloys (2003) (170)
- Modeling of InGaN/Si tandem solar cells (2008) (166)
- Fano interference of the Raman phonon in heavily boron‐doped diamond films grown by chemical vapor deposition (1995) (166)
- Optical properties and electronic structure of InN and In-rich group III-nitride alloys (2004) (164)
- Effect of nitrogen on the band structure of GaInNAs alloys (1999) (145)
- Effect of polarization fields on transport properties in AlGaN/GaN heterostructures (2001) (141)
- Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band. (2012) (141)
- Metastability of Oxygen Donors in AlGaN (1998) (139)
- Band Anticrossing in III-N-V Alloys (2001) (131)
- Multiband GaNAsP quaternary alloys (2006) (129)
- Persistent photoconductivity in n-type GaN (1997) (128)
- Two-photon excitation in an intermediate band solar cell structure (2012) (114)
- Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs (2000) (113)
- Universal bandgap bowing in group III nitride alloys (2003) (112)
- On the crystalline structure, stoichiometry and band gap of InN thin films (2004) (105)
- Annealing studies of low‐temperature‐grown GaAs:Be (1992) (103)
- Effect of nitrogen on the electronic band structure of group III-N-V alloys (2000) (99)
- Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films (2012) (94)
- Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy (2003) (88)
- Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells (2001) (88)
- Valence band hybridization in N-rich GaN1-xAsx alloys (2004) (85)
- Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation (1999) (84)
- Mechanism of Schottky barrier formation: The role of amphoteric native defects (1987) (84)
- Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces (1988) (82)
- Pressure-dependent photoluminescence study of ZnO nanowires (2005) (81)
- Minority‐carrier mobility in p‐type GaAs (1979) (81)
- Electron mobility in n‐type GaAs at 77 K: Determination of the compensation ratio (1982) (77)
- Ideal transparent conductors for full spectrum photovoltaics (2012) (77)
- Effect of oxygen on the electronic band structure in ZnOxSe1−x alloys (2003) (73)
- Band structure of highly mismatched semiconductor alloys: Coherent potential approximation (2002) (73)
- Band gap bowing parameter of In1−xAlxN (2008) (67)
- Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys (2000) (66)
- Surface Recombination in Semiconductors (1995) (66)
- Valence band anticrossing in mismatched III-V semiconductor alloys (2007) (65)
- Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys (2003) (65)
- Electronic Band Structure of GaN x P y As 1 − x − y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells (2014) (64)
- Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range (2009) (64)
- Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells (2013) (64)
- Demonstration of a III–Nitride/Silicon Tandem Solar Cell (2009) (64)
- Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1−xOx alloys (2012) (62)
- Effects of surface states on electrical characteristics of InN andIn1−xGaxN (2007) (62)
- Band anticrossing in highly mismatched Sn x Ge 1-x semiconducting alloys (2008) (62)
- Enhancement of Curie temperature in Ga1−xMnxAs/Ga1−yAlyAs ferromagnetic heterostructures by Be modulation doping (2003) (61)
- Pressure dependence of the fundamental band-gap energy of CdSe (2004) (61)
- High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition (2004) (61)
- Hole transport and photoluminescence in Mg-doped InN (2010) (61)
- Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01 (2000) (60)
- Origin of the large band-gap bowing in highly mismatched semiconductor alloys (2003) (59)
- Effect of Nitrogen‐Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys (1999) (59)
- Crystal structure and properties of CdxZn1−xO alloys across the full composition range (2013) (58)
- Mg‐doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements (2008) (55)
- Current status of research and development of III–N–V semiconductor alloys (2002) (54)
- Electron mobility in InN and III-N alloys (2007) (51)
- Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1−xN interfaces (1998) (51)
- Band anticrossing in GaP 1-x N x alloys (2002) (51)
- Demonstration of ZnTe1-xOx Intermediate Band Solar Cell (2011) (50)
- Band anticrossing in dilute nitrides (2004) (48)
- Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures (2002) (47)
- Mutual passivation of electrically active and isovalent impurities (2002) (46)
- Determination of free hole concentration in ferromagnetic Ga1−xMnxAs using electrochemical capacitance–voltage profiling (2002) (44)
- Effects of Free Carriers on the Optical Properties of Doped CdO for Full-Spectrum Photovoltaics (2016) (44)
- Synthesis of InNxP1−x thin films by N ion implantation (2001) (44)
- Structural and electronic properties of amorphous and polycrystalline In2Se3 films (2003) (44)
- Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs (2003) (44)
- Mg doped InN and confirmation of free holes in InN (2011) (43)
- Formation of diluted III–V nitride thin films by N ion implantation (2001) (43)
- Arsenic Antisite-Related Defects in Low-Temperature MBE Grown GaAs (1992) (42)
- Highly mismatched GaN 1-x Sb x alloys (2016) (41)
- Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition (2015) (41)
- Structure-dependent hydrostatic deformation potentials of individual single-walled carbon nanotubes (2004) (41)
- Effects of point defects on thermal and thermoelectric properties of InN (2011) (40)
- Electron mobility in Al{sub x}Ga{sub 1{minus}x}N/GaN heterostructures (1997) (40)
- Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures (2002) (40)
- In1−xMnxSb—a narrow-gap ferromagnetic semiconductor (2003) (40)
- GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy (2013) (40)
- Electronic structure of Ga 1-x Mn x As analyzed according to hole-concentration-dependent measurements (2010) (39)
- Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing (2008) (38)
- Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers (2011) (38)
- Theoretical transport studies of p-type GaN/AlGaN Modulation Doped Heterostructures (1999) (37)
- Demonstration of homojunction ZnTe solar cells (2010) (37)
- Fermi level stabilization and band edge energies in CdxZn1−xO alloys (2014) (36)
- Temperature dependence of the band gap of ZnSe1−xOx (2009) (35)
- Band-gap bowing effects in BxGa1-xAs alloys (2002) (35)
- Growth of Thick InN by Molecular Beam Epitaxy (2002) (34)
- Electron cyclotron effective mass in indium nitride (2010) (34)
- Fermi-level stabilization in the topological insulators Bi2Se3 and Bi2Te3: Origin of the surface electron gas (2014) (34)
- Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects (1992) (33)
- Full multiple scattering analysis of XANES at the Cd L3 and O K edges in CdO films combined with a soft-x-ray emission investigation (2010) (33)
- Dislocation density reduction by isoelectronic impurities in semiconductors (1989) (33)
- Band structure and optical properties of InyGa1-yAs1-xNx alloys (2001) (31)
- Synthesis and optical properties of II-O-VI highly mismatched alloys (2004) (31)
- Shallow donor associated with the main electron trap (EL2) in melt‐grown GaAs (1983) (31)
- Origin of n‐type conductivity of low‐temperature grown InP (1994) (31)
- Effect of Sb on GaNAs Intermediate Band Solar Cells (2012) (30)
- Annealing of AsGa-related defects in LT-GaAs: The role of gallium vacancies (1993) (30)
- Growth and properties of ferromagnetic In1−xMnxSb alloys (2003) (30)
- GaN1−xBix: Extremely mismatched semiconductor alloys (2010) (30)
- Narrow band gap group III-Nitride alloys (2004) (30)
- Curie temperature limit in ferromagnetic Ga1-xMnxAs (2003) (29)
- Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1-x formed by N ion implantation (2002) (29)
- Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting (2003) (29)
- Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer (2014) (28)
- Defects and properties of cadmium oxide based transparent conductors (2016) (28)
- Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy (2013) (28)
- Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect (2008) (28)
- High Electron Mobility InN (2007) (28)
- Electronic band structure of ZnO-rich highly mismatched ZnO1−xTex alloys (2015) (28)
- Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations (1996) (27)
- Band anticrossing in group II-Ox-VI1-x highly mismatched alloys: Cd1-xMnyOxTe1-x quaternaries synthesized by O ion implantation (2002) (27)
- Electrical properties of InGaN‐Si heterojunctions (2009) (27)
- Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range (2015) (27)
- Valence Band Anticrossing in GaBi$_{x}$As$_{1-x}$ (2007) (27)
- Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy (2011) (27)
- High-temperature hall effect in ga1-xmnxas (2003) (27)
- Native-defect-controlled n-type conductivity in InN (2006) (25)
- Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content (2009) (25)
- Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy (2002) (25)
- Diluted ZnMnTe oxide: a multi‐band semiconductor for high efficiency solar cells (2004) (24)
- Electronic effects determining the formation of ferromagnetic III1−xMnxV alloys during epitaxial growth (2004) (24)
- Effect of film thickness on the incorporation of Mn interstitials in Ga1−xMnxAs (2005) (23)
- Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: implications to ferromagnetism. (2008) (23)
- Electronic structure of CdO studied by soft X-ray spectroscopy (2011) (23)
- Optical bleaching effect in InN epitaxial layers (2006) (23)
- NixCd1−xO: Semiconducting alloys with extreme type III band offsets (2015) (23)
- Compositional modulation in InxGa1-xN: TEM and x-ray studies (2005) (22)
- Low gap amorphous GaN1−xAsx alloys grown on glass substrate (2010) (22)
- Electrical and optical properties of p-type InN (2011) (22)
- On the optical evaluation of the EL2 deep level concentration in semi‐insulating GaAs (1983) (22)
- Electron mobility limits in a two-dimensional electron gas: GaAs-GaAlAs heterostructures (1984) (22)
- Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures (2012) (22)
- Growth and characterization of highly mismatched GaN1−xSbx alloys (2014) (21)
- Direct evidence of carbon precipitates in GaAs and InP (1994) (21)
- Multiphonon Resonance Raman Scattering in InGaN (2005) (21)
- Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces (2014) (21)
- Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap (2013) (21)
- Application of the Amphoteric Native Defect Model to Diffusion and Activation of Shallow Impurities in III-V Semiconductors (1993) (21)
- Electronic properties of low-temperature InP (1993) (20)
- Compensating point defects in 4He+ -irradiated InN (2007) (20)
- Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs (1986) (19)
- Magneto-optical study of shallow donors in transmutation-doped GaAs (1978) (19)
- Band Gap Engineering of Oxide Photoelectrodes: Characterization of ZnO1–xSex (2012) (19)
- Low‐temperature grown compositionally graded InGaN films (2008) (18)
- Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces (1989) (18)
- GaN1−xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions (2013) (18)
- Epitaxial growth of CdSexTe1−x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures (2008) (18)
- Defect redistribution in postirradiation rapid-thermal-annealed InN (2010) (18)
- Determination of carrier concentration and compensation microprofiles in GaAs (1980) (18)
- High quality InxGa1–xN thin films with x > 0.2 grown on silicon (2010) (17)
- Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system (2008) (17)
- Electron mobility and thermoelectric power in pure mercury telluride (1976) (17)
- Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells (2008) (17)
- Electromodulation spectroscopy of highly mismatched alloys (2019) (17)
- Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers (2012) (17)
- Multicolor emission from intermediate band semiconductor ZnO1−xSex (2017) (17)
- Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands. (2018) (16)
- Temperature dependence of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys studied by photoreflectance (2012) (16)
- Fine Structure of the 3.42 eV Emission Band in GaN (1995) (16)
- Growth and transport properties of p-type GaNBi alloys (2011) (16)
- Activation of shallow dopants in II–VI compounds (1995) (16)
- Composition dependence of the hydrostatic pressure coefficients of the bandgap of ZnSe{sub 1-x}Te{sub x} alloys (2003) (16)
- Direct evidence of the Fermi-energy-dependent formation of Mn interstitials in modulation-doped Ga1−yAlyAs/Ga1−xMnxAs/Ga1−yAlyAs heterostructures (2004) (15)
- Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers (2014) (15)
- Photoluminescence of Energetic Particle-Irradiated InxGa1-xN Alloys (2005) (15)
- Stoichiometry Controlled Bipolar Conductivity in Nanocrystalline NixCd1−xO1+δ Thin Films (2019) (15)
- Diffusion, Interface Mixing and Schottky Barrier Formation (1993) (15)
- Pressure dependence of optical transitions in In{sub 0.15}Ga{sub 0.85}N/GaN Multiple Quantum Wells (1998) (15)
- Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells (2013) (15)
- Derivative surface photovoltage spectroscopy; a new approach to the study of absorption in semiconductors: GaAs (1979) (14)
- InGaN doping for high carrier concentration in plasma-assisted molecular beam epitaxy (2014) (14)
- Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy (2012) (14)
- Reassessment of space‐charge and central‐cell scattering contributions to GaAs electron mobility (1981) (14)
- Effect of oxygen flow rate on properties of Cu4O3 thin films fabricated by radio frequency magnetron sputtering (2020) (14)
- Modeling of the atomic structure and electronic properties of amorphous GaN1-xAsx (2014) (14)
- Dopants and Defects in InN and InGaN Alloys (2005) (14)
- In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications (2013) (14)
- Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys (2015) (13)
- Near-band-edge photoluminescence emission in AlxGa1−xN under high pressure (1998) (13)
- Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys (2017) (13)
- Photovoltaic action from InxGa1‐xN p‐n junctions with x > 0.2 grown on silicon (2011) (13)
- Structure–Property Relationship of Low-Dimensional Layered GaSexTe1–x Alloys (2018) (13)
- Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices (2011) (13)
- Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys (2003) (13)
- Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs (2000) (12)
- Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor (2016) (12)
- Improved Open-Circuit Voltage and Photovoltaic Properties of ZnTeO-Based Intermediate Band Solar Cells With n-Type ZnS Layers (2017) (12)
- Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation (2001) (12)
- GaAs–oxide interface states: Gigantic photoionization via Auger‐like process (1981) (12)
- Bistable Amphoteric Native Defect Model of Perovskite Photovoltaics. (2018) (12)
- Band anticrossing in GaP1-xNx alloys (2001) (12)
- Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys (2013) (12)
- Photoreflectance study on the behavior of plasma‐induced defects deactivating Si donors in GaAs (1995) (12)
- Cl-doping effect in ZnTe1-xOx highly mismatched alloys for intermediate band solar cells (2019) (12)
- Mutual passivation effects in Si-doped diluted In{sub y}Ga{sub 1-y}As{sub 1-x}N{sub x} alloys (2003) (12)
- P-type InGaN across the entire alloy composition range (2013) (12)
- Tuning structural, electrical, and optical properties of oxide alloys: ZnO1−xSex (2012) (11)
- Band anticrossing effects in MgyZn1−yTe1−xSex alloys (2002) (11)
- Electrical and optical characterization of n-InAsSb/n-GaSb heterojunctions (2010) (11)
- Anti-crossing behavior of local vibrational modes in AlSb (1998) (11)
- Preparation of high transmittance ZnO:Al film by pulsed filtered cathodic arc technology and rapid thermal annealing (2011) (11)
- Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films (2015) (11)
- ZnO1−xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure (2019) (11)
- Pressure dependence of the photoluminescence spectra of nitrogen‐doped ZnSe: Evidence of compensating deep donors (1994) (11)
- Electron-phonon scattering in Si doped GaN (1996) (11)
- Electrical and electrothermal transport in InN: The roles of defects (2009) (11)
- Exploration of the growth parameter space for MBE-grown GaN1−xSbx highly mismatched alloys (2015) (10)
- Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications (2008) (10)
- Hole‐scattering mechanisms in modulation‐doped heterostructures (1986) (10)
- Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure (1998) (10)
- Chemical trends of deep levels in van der Waals semiconductors (2020) (10)
- Pressure-induced structural transition of CdxZn1−xO alloys (2016) (10)
- Electronic structure of highly mismatched semiconductor alloys (2000) (10)
- Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content (2012) (10)
- Group III-nitride alloys as photovoltaic materials (2004) (10)
- Native defects in InxGa1−xN alloys (2006) (10)
- InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates (2008) (10)
- Thermal stability of amorphous GaN1−xAsx alloys (2011) (9)
- Amphoteric substitutionality and lattice distortion of Ge in InP (1994) (9)
- Si in GaN — On the Nature of the Background Donor (1996) (9)
- Strain relaxation of CdTe films growing on lattice-mismatched substrates (2009) (9)
- Effects of pressure on the band structure of highly mismatched Zn1−yMnyOxTe1−x alloys (2004) (9)
- High efficiency, radiation-hard solar cells (2004) (9)
- Synthesis of highly mismatched alloys using ion implantation and pulsed laser melting (2007) (9)
- Effects of Ni d-levels on the electronic band structure of NixCd1-xO semiconducting alloys (2017) (9)
- InGaN/Si heterojunction tandem solar cells (2008) (9)
- MIGRATION OF COMPENSATING DEFECTS IN P-TYPE ZNSE DURING ANNEALING (1996) (9)
- Formation of nanoscale composites of compound semiconductors driven by charge transfer (2016) (9)
- High resistivity and ultrafast carrier lifetime in argon implanted GaAs (1996) (9)
- The effect of coimplantation on the electrical activity of implanted carbon in GaAs (1993) (9)
- GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates (2011) (8)
- The effects of x-ray induced structural changes on the microstructure of a-Si after thermal crystallization (1999) (8)
- Experimental and theoretical studies on gadolinium doping in ZnTe (2008) (8)
- Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers (2018) (8)
- Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range (2013) (8)
- Highly Mismatched Alloys for Intermediate Band Solar Cells (2005) (8)
- High dose Cl implantation in ZnSe: Impurity incorporation and radiation damage (1994) (8)
- Evidence of extreme type-III band offset at buried n -type CdO/p -type SnTe interfaces (2015) (8)
- GaAs‐oxide interface states: A gigantic photoionization effect and its implications to the origin of these states (1981) (7)
- Electron Barrier Engineering in a Thin-Film Intermediate-Band Solar Cell (2015) (7)
- High efficiency InAlN-based solar cells (2008) (7)
- InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices (2015) (7)
- On the thermal degradation of tunnel diodes in multijunction solar cells (2017) (7)
- Amorphous gallium oxide sulfide: A highly mismatched alloy (2019) (7)
- Large photoinduced persistent optical absorption in selenium doped AlSb (1995) (7)
- TEM studies of as-grown, irradiated and annealed InN films (2007) (7)
- Persistent holographic absorption gratings in AlSb:Se (1996) (7)
- Doping of GaN1-xAsx with high As content (2011) (7)
- PRESSURE STUDIES OF DEFECTS AND IMPURITIES IN NITRIDES (1999) (7)
- Growth and characterization of Zn1-xCdxTe1-yOy highly mismatched alloys for intermediate band solar cells (2017) (6)
- Compositional modulation in InxGa1-xNInxGa1-xN (2006) (6)
- Undoped p-type GaN1-xSbx alloys: Effects of annealing (2016) (6)
- Absolute Pressure Dependence of the Second Ionization Level of EL2 in GaAs (1990) (6)
- Defects and Self-Compensation in Semiconductors (2006) (6)
- Surface hole accumulation and Fermi level stabilization energy in SnTe (2014) (6)
- Mutual passivation effects in highly mismatched group III-V-N alloys (2004) (6)
- Spin-flip Raman scattering in semimagnetic semiconductors (1980) (6)
- Irradiation‐induced defects in InN and GaN studied with positron annihilation (2010) (6)
- Band Anticrossing and Related Electronic Structure in III–N-V Alloys (2005) (6)
- The Bright Side and Dark Side of Hybrid Organic–Inorganic Perovskites (2020) (6)
- Compositional dependence of optical transition energies in highly mismatched Zn1−xCdxTe1−yOy alloys (2016) (6)
- Electron Scattering by Native Defects in Uniformly and Modulation Doped Semiconductor Structures (1989) (5)
- Tellurium n-type doping of highly mismatched amorphous GaN1−xAsx alloys in plasma-assisted molecular beam epitaxy (2014) (5)
- Electron Transport Properties of InN (2006) (5)
- Effects of synchrotron x-rays on PVD deposited and ion implanted α-Si (1997) (5)
- Highly luminescent InxGa1–xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE) (2009) (5)
- Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys (2019) (5)
- Synthesis and properties of highly mismatched II-O-VI alloys (2004) (5)
- Pressure‐dependent photoluminescence study of CuGaSe2 (2004) (5)
- Engineering Electronic Band Structure of Indium‐doped Cd1−xMgxO Alloys for Solar Power Conversion Applications (2018) (5)
- Numerical simulations of novel InGaN solar cells (2009) (5)
- Band structure engineering of ZnO1-xSex alloys (2010) (5)
- Indium doped Cd1-xZnxO alloys as wide window transparent conductors (2015) (5)
- Effects of hydrostatic pressure on optical properties of InN and In‐rich group III‐nitride alloys (2004) (5)
- DIRECT OBSERVATION OF THE HUBBARD GAP IN A SEMICONDUCTOR (1997) (5)
- Conduction band modifications by d states in vanadium doped CdO (2020) (5)
- Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1−xMnxAs (2002) (5)
- Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOx alloys (2016) (5)
- Improved photovoltaic properties of ZnTeO-based intermediate band solar cells (2018) (5)
- Copper-doped CdTe films with improved hole mobility (2007) (5)
- Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy (2015) (5)
- Three-dimensional band structure and surface electron accumulation of rs-CdxZn1−xO studied by angle-resolved photoemission spectroscopy (2019) (5)
- Annealing Characteristics Of Low Temperature Grown GaAs:Be (1991) (5)
- EFFECT OF SCATTERING BY NATIVE DEFECTS ON ELECTRON MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES (1991) (5)
- Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy (2019) (4)
- Microstructure of GaN1−xBix (2012) (4)
- Calculation of the ground state of shallow donors in GaAs1−xNx (2001) (4)
- Stacking faults and phase changes in Mg‐doped InGaN grown on Si (2009) (4)
- Metastability of the phosphorus antisite defect in low-temperature InP (2000) (4)
- Demonstration of ZnTe (2011) (4)
- Nitrogen-Induced Modification of the Electronic Structure of Group III-N-V Alloys: Preprint (1999) (4)
- Chapter 3 Fermi Level Effects on Mn Incorporation in III‐Mn‐V Ferromagnetic Semiconductors (2008) (4)
- Development of ZnTe-Based Solar Cells (2013) (4)
- Amphoteric behavior and precipitation of Ge dopants in InP (1996) (4)
- Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering (2019) (4)
- ELECTRON PARAMAGNETIC RESONANCE STUDY OF Se-DOPED AlSb: EVIDENCE FOR NEGATIVE-U OF THE DX CENTER (1995) (4)
- Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment (1997) (4)
- THz transient photoconductivity of the III–V dilute nitride GaPyAs1−y−xNx (2018) (4)
- Hall Mobilities in GaNxAs1-x (2010) (3)
- Carrier Concentration Dependencies of Magnetization & Transport in Ga1−xMnxAs1−yTey (2004) (3)
- Shallow-acceptor contribution to the near-resonance spin-flip Raman scattering in semiconductors (1979) (3)
- Mg induced compositional change in InGaN alloys (2019) (3)
- Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing (PLM-RTA) of N+-implanted GaAs (2003) (3)
- Synthesis of III-N x -V 1-x Thin Films by N Ion Implantation (2000) (3)
- New Developments in Dilute Nitride Semiconductor Research (2006) (3)
- Progress on III-nitride/silicon hybrid multijunction solar cells (2010) (3)
- Semiempirical modeling of a three sublayer photoanode for highly efficient photoelectrochemical water splitting: Parameter and electrolyte optimizations (2016) (3)
- Intermixing studies in GaN1-xSbx highly mismatched alloys. (2017) (3)
- Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys (2001) (3)
- Electrical properties of InN grown by molecular beam epitaxy (2004) (3)
- Composition dependence of the hole mobility in GasbxAs1-x (2008) (3)
- Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN (2019) (3)
- Effect of nitrogen on the band structure of III-N-V alloys (2000) (3)
- Group III-Nitride Materials for High Efficiency Photoelectrochemical Cells (2005) (3)
- Towards identification of localized donor states in InN (2007) (3)
- Effect of oxygen on the electronic band structure of II-O-VI alloys (2004) (3)
- Anomalously high electronic thermal conductivity and Lorenz ratio in Bi2Te3 nanoribbons far from the bipolar condition (2019) (3)
- Reply to ’Comment on ’’Reassessment of space‐charge and central‐cell scattering contributions to GaAs electron mobility’’ ’ (1982) (2)
- Resonant Interaction Between Local Vibrational Modes and Extended Lattice Phonons in AlSb (1997) (2)
- High quality In x Ga 1 – x N thin films with x > 0 . 2 grown on silicon (2011) (2)
- Band anticrossing in highly mismatched semiconductor alloys (2002) (2)
- Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP (1993) (2)
- Realization of rocksalt Zn1−xCdxO thin films with an optical band gap above 3.0 eV by molecular beam epitaxy (2020) (2)
- Structural studies of GaN1-x Asx and GaN1-x Bix alloys for solar cell applications (2012) (2)
- Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As (1997) (2)
- Multiband modification of III-V dilute nitrides for IBSC application (2017) (2)
- Ferromagnetic III-Mn-V Semiconductors: Manipulation of Magnetic Properties by Annealing, Extrinsic Doping, and Multilayer Design (2003) (2)
- Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1−x alloys (2003) (2)
- Transparent conductors for full spectrum photovoltaics (2012) (2)
- Erratum: Electron cyclotron effective mass in indium nitride [Appl. Phys. Lett. 96, 052117 (2010)] (2011) (2)
- Evidence for Oxygen DX Centers in AlGaN (1998) (2)
- Evidence for p‐type InN (2007) (2)
- Composition Dependence of the Hydrostatic Pressure Coefficients of the Bandgap of ZnSe 1- x Te x Alloys (2003) (2)
- Highly Mismatched GaN 1x Sb x Alloys : Synthesis , Structure and Electronic Properties (2016) (2)
- Carrier Transport in Artificially Structured Two-Dimensional Semiconductor (1992) (2)
- The effects of synchrotron x-rays on the local structure and the recrystallization of ion-damaged Si (1997) (2)
- Growth of non-polar a -plane and cubic InN on r -plane sapphire by molecular beam epitaxy (2003) (1)
- Photophysics of Localized Deep Defect States in Hybrid Organic–Inorganic Perovskites (2021) (1)
- Wurtzite-to Amorphous-to Cubic Phase Transition of GaN1-XAsx Alloys with Increasing as Content (2012) (1)
- Amorphous GaN1−xAsx alloys for multi-junction solar cells (2010) (1)
- Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy (2020) (1)
- Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures (1996) (1)
- Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures (1997) (1)
- Cl-doping in highly mismatched ZnTe1−xOx alloys for intermediate band solar cells (2016) (1)
- EXAFS Analysis of Dilute Magnetic Semiconductor Thin Films Synthesized by the Ion Beam Technique (1993) (1)
- Microstructure of Mg doped GaNAs alloys (2013) (1)
- On the Use of Transparent Conductive Oxides in High Concentrator III-V Multijunction Solar Cells (2017) (1)
- PHOTOLUMINESCENCE STUDIES OF GaN AND AlGaN LAYERS UNDER HYDROSTATIC PRESSURE (1995) (1)
- Electron scattering mechanisms at polar GaN/AlGaN interfaces (2001) (1)
- Modeling of Atom Diffusion and Segregation in Semiconductor Heterostructures (1997) (1)
- Characterisation of semi-insulating GaAs (1982) (1)
- Local vibrational modes of Se-H complexes in AlSb (1996) (1)
- Publisher's Note: Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing [Phys. Rev. B 78, 075201 (2008)] (2008) (1)
- P-type and undoped InGaN across the entire alloy composition range (2013) (1)
- Structural, optical, and electrical properties of WZ- and RS-ZnCdO thin films on MgO (100) substrate by molecular beam epitaxy (2021) (1)
- Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells (1998) (1)
- HOLE TRANSPORT IN THE UPPER HUBBARD BAND IN CU-DOPED GERMANIUM UNDER UNIAXIAL PRESSURE (1998) (1)
- High Pressure Study of III-Nitrides and Related Heterostructures (1997) (1)
- Growth and characterization of highly mismatched Zn1−xCdxTe1−yOy alloys for intermediate band solar cells (2015) (1)
- Intermediate band solar cell: Proof of concept (2011) (1)
- Band Gap Variation of CdInSe and CdZnS Fabricated by High Throughput Combinatorial Growth Technique (2011) (1)
- Compositional Modulation in InxGa1-xN (2008) (1)
- On the predictive, quantitative properties of the amphoteric native defect model (2019) (1)
- GaN(x)As(1-x) Quantum Structures Fabricated by FIB Patterning (2005) (1)
- Relation between structural and optical properties of InN and InxGa1-xN thin films (2004) (1)
- Multicolor emission from intermediate band semiconductor ZnO 1 â ' (2017) (1)
- Defect Studies of GaN under Large Hydrostatic Pressure (1995) (1)
- Defect Formation and Electronic Transport at AlGaN/GaN Interfaces (1997) (1)
- Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN (2005) (1)
- Photoquenching Of Persistent Photoconductivity In N-Type GaN (1997) (1)
- New Concepts and Materials for Solar Power Conversion Devices (2011) (0)
- Composition Dependence of the Hole Mobility in Dilute GaSbxAs1-x (2008) (0)
- Oxygen Concentration Dependence of Photovoltaic Properties of Intermediate Band Solar Cells based on Cl-doped ZnTeO (2019) (0)
- Theoretical Electron Mobility/Temperature Dependencies as Functions of Carrier Concentration and Compensation Ratio (1996) (0)
- Temperature dependence of electron mobilities in InN (2009) (0)
- Band anticrossing effects in Mg{sub y}Zn{sub 1-y}Te{sub 1-x}Se{sub x} alloys (2001) (0)
- Alloys : Synthesis , Structure and Electronic Properties (2018) (0)
- The role of internal surfaces in Gallium Nitride (1996) (0)
- Collection of photocarriers in intermediate band solar cells: experiments and equivalent circuit analysis (2022) (0)
- Oxygen-induced reduction of the fundamental band gap of ZnOSe alloys (2003) (0)
- Fabrication of GaNxAs1−x Quantum Structures by Focused Ion Beam Patterning (2004) (0)
- Exciton Localization in ZnSe$_{1-x}$O$_{x}$ (2010) (0)
- Band Anticrossing and Related Electronic Structure (2005) (0)
- Effect of Cl-doping in ZnTeO on Photoluminescence and Photovoltaic Properties of ZnTeO-based Intermediate Band Solar Cells (2017) (0)
- Large persistent photochromic effect due to DX centers in AlSb doped with selenium (1995) (0)
- P-type InGaN across entire composition range (2012) (0)
- Physics of Multijunction and Multiband Solar Cells (2010) (0)
- Optical Characterization of ZnTeO Intermediate Band Solar Cells (2011) (0)
- Abstract: Surface and interface study by derivative surface photovoltage spectroscopy: GaAs (1979) (0)
- Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys (2003) (0)
- Progress Towards a High Efficiency InGaN/Si Hybrid Solar Cell (2010) (0)
- ERNEST mRLANDCs LAWRENCE ERKELEY NATI 0 NAh LAB = RATORY Electron = Phonon Scattering in Si Doped (2008) (0)
- Effects of Mn Site Location on the Magnetic Properties of III1−xMnxV Semiconductors (2005) (0)
- Hopping conduction through the 2s states of copper acceptors in uniaxially stressed germanium (2001) (0)
- HIGH EFFICIENCY InAIN-BASED SOLAR CELLS (2008) (0)
- Transparent $\mathbf{Ni}_{\mathbf{x}}\mathbf{Cd}_{1-\mathbf{x}}\mathbf{O}_{1+\boldsymbol{\delta}}$ alloy thin films with bipolar conductivity (2019) (0)
- Electron Mobility in InGaN and InAlN Alloys (2006) (0)
- Effects of structural defects on the activation of sulfur donors in GaNxAs1−x formed by N implantation (2001) (0)
- Diluted semiconductors formed from energetic beams (2005) (0)
- Characterization of inactive carbon in GaAs (1994) (0)
- Giant negative piezoresistance effect in copper-doped germanium (1996) (0)
- Ultrahigh Efficiency Multiband Solar Cells Final Report forDirector's Innovation Initiative Project DII-2005-1221 (2006) (0)
- Lawrence Berkeley National Laboratory Recent Work Title Engineering Electronic Band Structure of Indium-doped Cd 1 − xMgxO Alloys for Solar Power Conversion Applications Permalink (2018) (0)
- Possible Origin of Preformed Hole Pairs and Superconductivity in Cuprates (2022) (0)
- Resonance Raman Scattering in InGaN (2005) (0)
- High efficiency, radiation-hard solar cells - eScholarship (2004) (0)
- Mutual Passivation in Dilute GaNxAs 1x Alloys (2005) (0)
- Intermediate band solar cells based on highly mismatched II-VI oxide semiconductors (2020) (0)
- Synthesis and Optical Properties of Multiband III‐V Semiconductor Alloys (2007) (0)
- Gadolinium Doping in ZnTe (2008) (0)
- Origin of the Bandgap Bowing in ZNSe(1-x)Te(x) Alloys (2002) (0)
- Material properties of Cd1−xMgxO transparent conductors (2013) (0)
- Exceptional Electron Transport Properties of In-rich InGaN (2006) (0)
- High Mobility Amorphous Ga2O3-CdO Alloy Thin Films Synthesized by Room Temperature Sputtering. (2015) (0)
- Electronic Properties of InN and InGaN: Defects and Doping (2009) (0)
- Hall mobilities in GaNxAs 1x (2011) (0)
- Electrolyte-based capacitance voltage analysis of InN (2006) (0)
- Hole mobility in Copper-doped CdTe films (2008) (0)
- Development of intermediate band solar cell based on ZnTe1−xOx synthesized by oxygen ion implantation (2011) (0)
- Photoluminescence under pressure and annealing of nitrogen-doped ZnSe (1994) (0)
- Doping of GaN 1 2 xAsx with high As content (2011) (0)
- Electron Transport and Defect Profiles at Polar GaN/AlGaN Interfaces (1998) (0)
- Absolute pressure derivatives of deep level defects in III-V semiconductors (1987) (0)
- Cl-doping in highly mismatched ZnTe1−xOx alloys for intermediate band solar cells (2017) (0)
- Effect of pressure on the luminescence emissions in CuGaSe2 (2004) (0)
- Electronically controlled chemical stability of compound semiconductor surfaces. (2019) (0)
- Electron scattering in bulk InN (2005) (0)
- Designing III-V dilute nitride alloys for IBSC application (2016) (0)
- Title : Defect redistribution in postirradiation rapid-thermal-annealed InN Year : 2010 Version : Final (2015) (0)
- Mutual Passivation in Dilulte GaNxAs1-x Alloys (2005) (0)
- Electron Mobilities at Polar GaN/AlGaN Interfaces (2000) (0)
- Enhancement of Curie temperature in GaMnAs by Be remote doping (2004) (0)
- Spatial distribution of carbon and native defects in large-diameter bulk grown GaAs (1987) (0)
- Author Correction: Chemical trends of deep levels in van der Waals semiconductors (2020) (0)
- Pressure-induced structural transition of CdxZn 1 2 xO alloys (2016) (0)
- Optical processes in In/sub x/Ga/sub 1-x/N epitaxial films grown by metalorganic chemical vapor deposition (1998) (0)
- Pressure reduction of parasitic parallel conduction in InGaAs/InP heterostructures containing LT-InP layers (2000) (0)
- Fundamental Band Gap in GaNP Alloys (2000) (0)
- Lawrence Berkeley National Laboratory Recent Work Title Carrier Lifetimes in a III-VN Intermediate-Band Semiconductor Permalink (2017) (0)
- The effect of thin film thickness on the incorporation of Mn interstitials in Ga{sub 1-x}Mn{sub x}As (2004) (0)
- Development of ZnTe1−xOx intermediate band solar cells (2010) (0)
- The effects of amorphous layer regrowth on carbon activation in GaAs and InP (1993) (0)
- Optimization of thermoelectric power factor in defect-engineered Bi$_{2}$Te$_{3}$ thin films (2014) (0)
- Doping of the Hubbard bands in uniaxially stressed Ge:Cu (2000) (0)
- Chemical beam epitaxy of dilute nitrides for intermediate band solar cells (2015) (0)
- Defect Doping of InN (2007) (0)
- X-ray Spectroscopy of InN heavily irradiated with He (2005) (0)
- Compositional Ordering in In x Ga 1-x N and its influence on optical properties (2004) (0)
- Proceedings of the 20th International Conference on Defects in Semiconductors Held in Berkeley, CA, USA, 26-30 July 1999 (1999) (0)
- Fermi Level Stabilization, Band Offsets and Maximum Doping Limits in Wide-Gap II-VI Semiconductors (1996) (0)
- Pressure-induced structural transition of CdxZn 1 − xO alloys (2016) (0)
- CdTe films grown on Si, GaAs and Quartz substrates (2008) (0)
- Local Structure of Amorphous GaNAs Alloys Across the Composition Range (2012) (0)
- Magnetic anisotropy of strain‐engineered InMnAs ferromagnetic films and easy‐axis manipulation from out‐of‐plane to in‐plane orientations (2005) (0)
- Calculation of the ground state of shallow donors in GaAs{sub 1-x}N (2000) (0)
- Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescence (2015) (0)
- Band Anticrossing Effects in Dilute Nitrides (2005) (0)
- Pressure-dependent photoluminescence study of InGaN and AlGaN alloys (1998) (0)
- Project Title : Ideal transparent conductors for full spectrum photovoltaics (2014) (0)
- Demonstration of Low-Resistive P-Type Cu4O3 Thin Films by Radio Frequency Sputtering for Low-Cost Thin Film Solar Cells (2019) (0)
- Multiband Solar Cell (2011) (0)
- Mutual passivation effects in Si-doped diluted InGaAsN alloys (2003) (0)
- Passivation of Electrically Active and Isovalent Impurities (2002) (0)
- Defect Ordering in InN (2007) (0)
- Transparent conducting amorphous CdO-Ga2O3 films synthesized by room temperature sputtering (2016) (0)
- Energetic Beam Synthesis of Dilute Nitrides and Related Alloys (2008) (0)
- Effect of Sb on GaNAs intermediate band solar cells (2013) (0)
- Observation of a local vibrational mode of DX centres in Si doped GaAs (1991) (0)
- Three-dimensional band structure and surface electron accumulation of rs-CdxZn1−xO studied by angle-resolved photoemission spectroscopy (2019) (0)
- Electron scattering by native defects in III-V nitrides and their alloys (1996) (0)
- Annealing of nitrogen-doped ZnSe at high pressures: Toward suppression of native defect formation (1994) (0)
- Electronic Structure and Lattice Site Location of Mn in III-Mn-V Ferromagnetic Semiconductors (2012) (0)
- Growth and characterization of highly mismatched GaN 1 2 xSbx alloys (2014) (0)
- Electronic and Optical Properties of Energetic Particle-IrradiatedIn-rich InGaN (2005) (0)
- CHARGE CARRIER TRANSPORT IN ARTIFICIALLY STRUCTURED TWO-DIMENSIONAL SEMICONDUCTOR SYSTEMS* (1995) (0)
- Thermopower measurements of n- and p-type InN (2008) (0)
- Direct observation of the Hubbard gap in uniaxially stressed copper-doped germanium (1997) (0)
- Carrier Dynamics in an Intermediate-Band Semiconductor by THz Transient Photoconductivity (2018) (0)
- The effect of thin film thickness on the incorporation of Mn interstitials in Ga1-xMnxAs (2004) (0)
- Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures (1997) (0)
- Title : Compensating point defects in 4 He +-irradiated InN Year : 2007 Version : Final (2015) (0)
- Growth of low resistive Al-doped ZnCdO thin films with rocksalt structure for transparent conductive oxide thin films (2020) (0)
- Resonant State of Substitutional Oxygen in ZnSe (2005) (0)
- MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE (2009) (0)
- Compensating point defects in He-irradiated n-type InN and GaN (2006) (0)
- Scattering of Free Carriers by Oxide Precipitates in Czochralski-Grown Silicon (1985) (0)
- Electron Mobility of InN (2006) (0)
- See also ADM 002356 . Presented at the International Conference on Nitride Semiconductors ( 8 th ) ( ICNS 8 ) Held in Jeju , Korea on October 18-23 , 2009 (2011) (0)
- Electronic Properties of Energetic Particle-Irradiated In-rich InGaN Alloys (2005) (0)
- Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation (2000) (0)
- Thermopower of parallel conducting structures (2010) (0)
- MICROSCOPIC MECHANISM OF GaAs SCHOTTKY BARRIER FORMATION (1986) (0)
- Implantation of Carbon in GaAs and Compensating Native Defects (1993) (0)
- Synthesis and optical properties of ZnTe1−xOx highly mismatched alloys for intermediate band solar cells (2012) (0)
- P-type InGaN alloys (2007) (0)
- Mutual passivation of group IV donors and isovalent nitrogen in diluted GaN{sub x}As{sub 1-x} alloys (2003) (0)
- A High Through-put Combinatorial Growth Technique for Semiconductor Thin Film Search (2011) (0)
- Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As (1995) (0)
- Optical properties of ion beam synthesized nitrogen‐rich GaN1‐xAsx (2009) (0)
- Vibrational Mode Fourier Transform Spectroscopy with a Diamond Anvil Cell: Modes of the Si DX Center and S Related Centers in GaAs (1992) (0)
- Compensation dependence of Ga impurity absorption spectra in highly compensated Ge: Ga, As (1995) (0)
- for Intermediate Band Solar Cells (2015) (0)
- Growth and characterization of highly mismatched GaN 1 2 x Sb x alloys (2018) (0)
- Planar modulation of the conduction band edge in GaNxAs1-x (2005) (0)
- Semiempirical Modelling of a Nanostructured Photoanode Profile for Highly EfficientWater Splitting: Three Sublayers Concept (2016) (0)
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