Walter Eric Spear
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German physicist
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Physics
Why Is Walter Eric Spear Influential?
(Suggest an Edit or Addition)According to Wikipedia, Walter Eric Spear FRSE PhD FRS FInstP was a German physicist noted for his pioneering work to help develop large area electronics and thin film displays. He was born in Frankfurt to a Jewish father and a Lutheran mother; by the time he finished his school examinations in 1938 life for Jews and people associated with Jews was becoming difficult. With the support of friends and relatives in Britain, the family were able to move to London, where he arrived in 1938 "with a small suitcase and a large cello".
Walter Eric Spear's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Electronic properties of substitutionally doped amorphous Si and Ge (1976) (590)
- Substitutional doping of amorphous silicon (1993) (451)
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique (1977) (398)
- Electronic Transport in Amorphous Silicon Films (1970) (396)
- Amorphous-silicon field-effect device and possible application (1979) (336)
- Investigation of the density of localized states in a-Si using the field effect technique (1976) (325)
- Drift mobility techniques for the study of electrical transport properties in insulating solids (1969) (324)
- Investigation of the localised state distribution in amorphous Si films (1972) (273)
- Charge Transport in Solid and Liquid Ar, Kr, and Xe (1968) (263)
- Electronic transport and state distribution in amorphous Si films (1972) (237)
- Photoconductivity and recombination in doped amorphous silicon (1977) (188)
- Photoconductivity and absorption in amorphous Si (1973) (184)
- Doped amorphous semiconductors (1977) (183)
- The temperature dependence f photoconductivity in a-Si (1974) (153)
- Hall effect and impurity conduction in substitutionally doped amorphous silicon (1977) (147)
- The density of states in amorphous silicon determined by space-charge-limited current measurements (1982) (142)
- Amorphous silicon p‐n junction (1976) (137)
- Transit Time Measurements of Charge Carriers in Amorphous Selenium Films (1957) (137)
- The study of transport and related properties of amorphous silicon by transient experiments (1983) (114)
- Electron and Hole Transport in CdS Crystals (1962) (104)
- An investigation of the amorphous-silicon barrier and p-n junction (1978) (100)
- A new approach to the interpretation of transport results in a-Si (1980) (89)
- Electron hopping transport and trapping phenomena in orthorhombic sulphur crystals (1966) (88)
- The effects of ion implantation on the electrical properties of amorphous silicon (1980) (79)
- The Hole Mobility in Selenium (1960) (74)
- An Electrostatic Focusing System and its Application to a Fine Focus X-Ray Tube (1951) (63)
- Electronic and optical properties of a-Si1-xCx films prepared from a H2-diluted mixture of SiH4 and CH4 (1990) (63)
- Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond state (1984) (61)
- Electronic transport and localization in low mobility solids and liquids (1974) (60)
- The energy of the dangling-bond states in a-Si (1986) (58)
- Photoluminescence and lifetime studies on plasma discharge a-Si (1979) (57)
- Dimensions of internalized object relations in borderline and schizophrenic patients. (1984) (57)
- The switching mechanism in amorphous silicon junctions (1985) (57)
- The interpretation of capacitance and conductance measurements on metal-amorphous silicon barriers (1979) (56)
- Some new results on transport and density of state distribution in glow discharge microcrystalline silicon (1983) (54)
- The charge transport in orthorhombic sulphur crystals (1964) (52)
- Application of amorphous silicon field effect transistors in integrated circuits (1981) (52)
- Determination of the extended-state electron mobility in a-Si (1985) (47)
- Photogeneration of charge carriers and related optical properties in orthorhombic sulphur (1966) (45)
- Hole Transport in Pure NiO Crystals (1973) (44)
- Hydrogen content, electrical properties and stability of glow discharge amorphous silicon (1979) (44)
- The effects of applied and internal strain on the electronic propertiesof amorphous silicon (1986) (42)
- Hole transport in the rare-gas solids Ne, Ar, Kr, and Xe (1975) (41)
- Electron Bombardment Effects in Thin Dielectric Layers (1955) (39)
- Carrier mobility and charge transport in monoclinic Se crystals (1961) (39)
- The interpretation of transport results in amorphous silicon (1980) (39)
- Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline silicon (1982) (39)
- Hydrogen profiling in amorphous silicon films and p-n junctions (1980) (37)
- The investigation of excess carrier lifetimes in amorphous silicon by transient methods (1984) (37)
- Carrier lifetimes in amorphous silicon junctions from delayed and interrupted field experiments (1983) (37)
- Photogeneration and geminate recombination in amorphous silicon (1983) (36)
- Charge Transport in the Diatomic Molecular Solids and Liquids: N 2 , O 2 , and CO (1972) (36)
- Low-temperature electron transport near the mobility edge of amorphous silicon (1986) (35)
- Hole Drift Mobility and Lifetime in CdS Crystals (1962) (34)
- Experimental evidence for electronic bubble states in liquid Ne (1972) (33)
- Doping of amorphous silicon by alkali-ion implantations (1979) (33)
- The characteristics of high current amorphous silicon diodes (1980) (33)
- Memory switching in amorphous silicon devices (1983) (33)
- Electrical and photoconductive properties of ion implanted amorphous silicon (1980) (32)
- Electronic transport properties of some low mobility solids under high pressure (1970) (32)
- The metal-amorphous silicon barrier, interpretation of capacitance and conductance measurements (1980) (31)
- The Fermi level position in doped amorphous silicon (1979) (31)
- Electron and hole transport in the band-tail states of amorphous silicon at low temperatures (1988) (29)
- Amorphous silicon/Langmuir-Blodgett film field effect transistor (1983) (28)
- Transport properties of amorphous germanium prepared by the glow discharge technique (1976) (27)
- The optical properties of orthorhombic sulphur crystals in the vacuum ultraviolet (1969) (27)
- Electronic transport and photoconductivity in phosphorus-doped amorphous germanium (1979) (26)
- Transport studies in doped amorphous silicon (1979) (26)
- Electroluminescence in amorphous silicon p-i-n junctions (1982) (26)
- Comments on the calculation of the extended state electron mobility in amorphous silicon (1985) (25)
- Electronic properties of crystallized glow discharge silicon (1978) (24)
- Recent developments in amorphous silicon p-n junction devices (1980) (24)
- Interpretation of the low-temperature photoconductivity in a-Si (1987) (23)
- Space Charge Limited Current Flow and Deep Trapping in Selenium (1961) (23)
- Electronic transport in liquid and solid sulphur (1968) (22)
- Qualitative differences in manifest object representations: implications for a multidimensional model of psychological functioning. (1981) (21)
- The WAIS and Rorschach test in diagnosing borderline personality. (1983) (21)
- Carrier recombination in orthorhombic sulphur (1975) (21)
- The lifetime of injected carriers in amorphous silicon p–n junctions (1981) (20)
- Amorphous and liquid semiconductors : proceedings of the Seventh International Conference on Amorphous and Liquid Semiconductors, Edinburgh, June-27 July 1, 1977 (1977) (20)
- The temperature dependence of the D° and D+ capture cross-section in a-Si (1985) (19)
- Transient mobility and lifetime studies in amorphous silicon and their interpretation (1985) (19)
- Transport in the electron tail states of amorphous silicon (1987) (19)
- Langmuir-Blodgett films in amorphous silicon MIS structures (1982) (19)
- Electronic properties of microcrystalline silicon prepared in the glow discharge plasma (1983) (18)
- The thickness dependence of excess carrier lifetime and mobility in amorphous silicon junctions (1983) (18)
- ELECTRONIC PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW DISCHARGE PLASMA (1981) (18)
- Electron hopping transport in orthorhombic S crystals (1964) (17)
- Volume Generated Currents and Secondary Effects in Amorphous Selenium Films (1956) (17)
- The interpretation of drift mobility experiments on amorphous silicon (1983) (17)
- Chapter 6 The Development of the a-Si: H Field-Effect Transistor and Its Possible Applications (1984) (17)
- Fundamental and applied work on glow discharge material (1984) (16)
- Photoconductivity studies of the mobility edge in amorphous silicon (1981) (16)
- The reversal of drifting excess carriers in an amorphous silicon junction (1983) (16)
- Determination of the recombination rate constants in amorphous silicon from double-injection experiments (1986) (16)
- Hydrogenated amorphous silicon studied by scanning tunneling microscopy (1988) (15)
- Some applications of mercury wetted contact relays (1962) (14)
- Electrical, optical and luminescence properties of a-Si/SiN multilayers (1985) (14)
- SURFACE EFFECTS IN ELECTRON-IRRADIATED Ge AT 80 K (1958) (13)
- A comparison of the electronic structure and properties of orthorhombic sulphur and monoclinic selenium (1972) (13)
- Substitutional and interstitial doping of amorphous silicon nitride (1987) (13)
- Transient Acoustoelectric Saturation Effects in ZnS and CdS Crystals (1964) (12)
- Spin effects in p+-i-n+ a-Si:H cells; photovoltaic detected magnetic resonance (PDMR) (1983) (12)
- RESEARCH NOTE: Electron mobility and edge emission in CdS crystals (1964) (12)
- A new vertically integrated amorphous silicon addressable image sensor (1984) (12)
- Electronic properties of amorphous phosphorus prepared by chemical transport in a glow discharge (1978) (12)
- The Edge Emission in CdS Crystals (1965) (12)
- TRANSPORT AND TAIL STATE INTERACTIONS IN AMORPHOUS SILICON (1989) (11)
- Recent applied developments in the amorphous silicon field (1982) (11)
- Chapter 15 Electronic Switching in Amorphous Silicon Junction Devices (1984) (10)
- A Possible Explanation of the Observed Electron Drift Velocity Saturation in Solid Ar, Kr, and Xe (1969) (10)
- An investigation of the phosphorus doping mechanism in a-Si by sweep-out experiments (1991) (10)
- The effects of linear strain on the electronic properties of glow discharge amorphous silicon (1985) (9)
- Transient acoustoelectric interaction in CdS and ZnS crystals (1966) (9)
- Electronic transport in molecular solids and liquids. (1969) (9)
- New amorphous-silicon electrically programmable nonvolatile switching device (1982) (9)
- Electronic properties of amorphous and microcrystalline silicon prepared in a microwave plasma from SiF4 (1991) (8)
- The extended-state hole mobility in amorphous silicon (1988) (8)
- Hole transport in solid xenon (1971) (8)
- Plasma deposited microcrystalline and amorphous silicon — a comparative study of photoluminescence (1983) (8)
- X-Ray Micro-radiography of Biological Specimens (1951) (8)
- An investigation of the phosphorous doping mechanism in a-Si by sweep-out experiments (1991) (7)
- New perspectives on psychological tests as measures of change. (1981) (7)
- Electron and hole transport in compensated amorphous silicon (1990) (7)
- Charge transport in solid and liquid argon (1967) (6)
- An investigation of some fundamental properties of a-Si from measurements of interface and surface effects (1983) (6)
- The investigation of transport properties in a-si by fast transient techniques (1987) (6)
- Electronic properties of metal—amorphous silicon barriers and junctions (1989) (6)
- The characteristics and properties of optimised a-Si FETs and their application in integrated image sensors (1983) (6)
- Investigation of Electron Optical Properties of an Electrostatic Focusing System (1951) (5)
- APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS (1981) (5)
- Hydrogen in gas phase and ion implantation doped amorphous silicon (1981) (5)
- HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS (1981) (5)
- An optical lever gauge for local thickness measurements on fragile crystal plates (1963) (4)
- The Electron Mobility in Amorphous Silicon Under Double Injection (1988) (3)
- Electronic properties of doped amorphous Si and Ge (2008) (3)
- ON THRESHOLD EFFECTS IN LASER ANNEALING OF SEMICONDUCTORS (1980) (3)
- INJECTION LUMINESCENCE IN AMORPHOUS SILICON p+-i-n+ JUNCTIONS (1981) (3)
- Electronic properties of substitutionally doped amorphous semiconductors (1979) (3)
- ODMR detected via the electroluminescence in p+-i-n+ a-Si:H cells (1984) (3)
- The Bakerian Lecture, 1988 - Amorphous semiconductors: a new generation of electronic materials (1988) (3)
- Doped amorphous silicon and its application in photovoltaic devices (1978) (3)
- An examination of schizophrenic patients' object relations using a theory of ego states. (1982) (2)
- Temperature compensation of amorphous silicon strain gauges (1989) (2)
- The development of amorphous silicon solar cells (1981) (2)
- The investigation of charge transport in compensated amorphous silicon (1990) (2)
- THE QUALITY OF THE UNDERGROUND WATERS OF LONG ISLAND [with Discussion] (1938) (2)
- SOME NEW DEVELOPMENTS IN THE FIELD OF AMORPHOUS SILICON SOLAR CELLS (1981) (2)
- Peter George Lecomber, 19 February 1941 - 9 September 1992 (1994) (1)
- A new approach to sweep-out experiments of band-tail carriers in a-Si (1989) (1)
- Transient current instabilities in a-Si: Hp+ni structures (1987) (1)
- Obsessions and/or Obsessionality (1993) (1)
- The preparation of unbacked gold films of known thickness (1955) (1)
- Amorphous silicon memories show promise (1989) (1)
- Comments on Electron and Hole Transport in the Band Tail States of Amorphous Silicon at Low Temperatures (1989) (1)
- Discussion of "Engineering Geology of the Catskill Water Supply" (0)
- Some new results on the electronic properties of a-Si and a-SiNx☆ (1988) (0)
- Employee Evaluation in Its Place (1961) (0)
- Investigation of the stress wave generated in CdS crystals by transient acoustoelectric interaction (1971) (0)
- Photogeneration in Amorphous Silicon Solar Cells (1983) (0)
- New Developments in the Field of Amorphous Semiconductors (1977) (0)
- Electronic transport in insulating solids (1971) (0)
- Electronic Properties of Metal-Amorphous Silicon Barriers and Junctions (1990) (0)
- INVESTIGATION OF THE CONDUCTION MECHANISM IN INSULATING SOLIDS (1962) (0)
- A method for doping an amorphous semiconductor material by ion implantation (1977) (0)
- There but for the Grace of God Go I (1999) (0)
- Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions (1987) (0)
- The Past, Present and Future of Amorphous Silicon (1981) (0)
- Discussion of "The Water Supply of Parkersburg, W. VA." (0)
- Recipient of the 1989 Mott award (1990) (0)
- Laser effects on amorphous silicon (2008) (0)
- Investigation of the charge transport in insulating solids (1961) (0)
- Photovoltaic detection of magnetic resonance in a‐Si:H solar cells (2008) (0)
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