Wilfried Vandervorst

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Wilfried Vandervorst is affiliated with the following schools: KU Leuven

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Wilfried Vandervorst's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. (2014) (274)
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers (2002) (254)
Island growth as a growth mode in atomic layer deposition: A phenomenological model (2004) (254)
High-k dielectrics for future generation memory devices (Invited Paper) (2009) (197)
Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy (2000) (181)
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition (2011) (170)
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory. (2015) (150)
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy (2002) (129)
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy (2004) (127)
Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium (2005) (124)
Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory (2014) (107)
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn (2013) (106)
Ion-implantation issues in the formation of shallow junctions in germanium (2006) (105)
Characterization of a point‐contact on silicon using force microscopy‐supported resistance measurements (1995) (102)
Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions (2004) (101)
Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling (2002) (98)
Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices (2012) (97)
Thickness dependence of the resistivity of platinum-group metal thin films (2017) (97)
Atomic layer deposition of hafnium oxide on germanium substrates (2005) (97)
Highly conductive diamond probes for scanning spreading resistance microscopy (2000) (96)
P implantation doping of Ge: Diffusion, activation, and recrystallization (2006) (91)
TWO-STEP ROOM TEMPERATURE GRAIN GROWTH IN ELECTROPLATED COPPER (1999) (89)
Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties (2002) (87)
Diffusion, activation, and regrowth behavior of high dose P implants in Ge (2006) (85)
Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy (1998) (83)
Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering (2014) (83)
An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates (2014) (82)
Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6 (2012) (82)
Filament observation in metal-oxide resistive switching devices (2013) (80)
Cross-sectional nano-spreading resistance profiling (1998) (79)
Shallow Junction Ion Implantation in Ge and Associated Defect Control (2005) (77)
Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2 (2002) (77)
Phase formation and thermal stability of ultrathin nickel-silicides on Si(100) (2010) (72)
Epitaxial staircase structure for the calibration of electrical characterization techniques (1998) (67)
Interfacial properties of ZrO2 on silicon (2003) (66)
Semiconductor profiling with sub-nm resolution: Challenges and solutions (2008) (64)
Evaluating probes for “electrical” atomic force microscopy (2000) (64)
Laser pulsing of field evaporation in atom probe tomography (2014) (64)
Assessing the performance of two-dimensional dopant profiling techniques (2004) (63)
Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips (2003) (59)
Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge (2006) (58)
Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon (2006) (58)
Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopy (2007) (56)
AES and XPS analysis of the interaction of Ti with Si and SiO2 during RTA (1989) (55)
Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies (2005) (55)
All-nanocellulose nonvolatile resistive memory (2016) (55)
One‐ and two‐dimensional carrier profiling in semiconductors by nanospreading resistance profiling (1996) (55)
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices. (2015) (55)
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S (2017) (55)
Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures (2016) (55)
Contrast reversal in scanning capacitance microscopy imaging (1998) (53)
Role of C and B clusters in transient diffusion of B in silicon (1996) (53)
Progress towards a physical contact model for scanning spreading resistance microscopy (2003) (52)
Recent insights into the physical modeling of the spreading resistance point contact (1996) (52)
Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes (2009) (51)
Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality (2006) (51)
Atom-probe for FinFET dopant characterization. (2011) (50)
Secondary ion mass spectrometry profiling of shallow, implanted layers using quadrupole and magnetic sector instruments (1987) (50)
Suppression of phosphorus diffusion by carbon co-implantation (2006) (48)
Surface and grain boundary scattering studied in beveled polycrystalline thin copper films (2004) (48)
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity (2018) (47)
Characterization of electrically active dopant profiles with the spreading resistance probe (2004) (47)
Review of electrical characterization of ultra-shallow junctions with micro four-point probes (2010) (47)
Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001) (2014) (47)
Geometry Effect on Impurity Incorporation and Grain Growth in Narrow Copper Lines (2005) (46)
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models (2014) (45)
Influence of oxygen on the formation of ripples on Si (1993) (45)
Evaluation of the electrical contact area in contact-mode scanning probe microscopy (2015) (45)
Conductive atomic force microscopy studies of thin SiO2 layer degradation (2006) (44)
Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition (2003) (44)
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory. (2017) (43)
Lateral and Vertical Dopant Profiling in Semiconductors by Atomic Force Microscopy Using Conducting Tips (1995) (43)
In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography (2011) (43)
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation (2011) (42)
On the effect of an oxygen beam in sputter depth profiling (1991) (41)
Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy (1998) (41)
Laser-Induced Periodic Surface Structures (LIPSS) on Heavily Boron-Doped Diamond for Electrode Applications (2018) (40)
Cost-effective cleaning and high-quality thin gate oxides (1999) (40)
Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon (2010) (40)
Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism (2018) (39)
A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS (2003) (39)
Determination of the angle of incidence in a Cameca IMS-4f SIMS instrument (1989) (39)
Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions (2008) (39)
Interpretation of C- V measurements for determining the doping profile in semiconductors (1980) (38)
Influence of Ti on CoSi2 nucleation (2000) (38)
Quantification of nanospreading resistance profiling data (1998) (38)
Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories. (2016) (37)
Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond (2012) (37)
Influence of the composition of the altered layer on the ripple formation (1994) (37)
Low-energy heavy-ion TOF-ERDA setup for quantitative depth profiling of thin films (2008) (37)
Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation (2008) (37)
RRAMs based on anionic and cationic switching: a short overview (2014) (37)
Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films. (2016) (35)
Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects (2012) (35)
Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing (2011) (34)
Errors in near-surface and interfacial profiling of boron and arsenic (2004) (34)
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells. (2013) (34)
Surface transient behavior of the 30Si+ yield with angle of incidence and energy of an O+2 primary beam (1985) (34)
Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth (2005) (34)
Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique (2013) (34)
Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications: Analysis of the density of nanometer-thin films (2005) (33)
Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth (2004) (33)
Nucleation and growth mechanisms of Al2O3 atomic layerdeposition on synthetic polycrystalline MoS2. (2017) (32)
Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer (2011) (32)
Dopant, composition and carrier profiling for 3D structures (2017) (32)
High depth resolution analysis of Si/SiGe multilayers with the atom probe (2009) (32)
Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer (2004) (31)
High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation Technique (2009) (31)
Low weight spreading resistance profiling of ultrashallow dopant profiles (1998) (31)
Evaluation of trap creation and charging in thin SiO2 using both SCM and C-AFM (2007) (31)
Successful Selective Epitaxial Si1 − x Ge x Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications (2003) (31)
Active dopant characterization methodology for germanium (2006) (31)
Three-dimensional doping and diffusion in nano scaled devices as studied by atom probe tomography (2013) (31)
Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices (2004) (30)
High quality Ge epitaxial layers in narrow channels on Si (001) substrates (2010) (30)
Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon (2015) (30)
Ge1-xSnx materials: Challenges and applications (2013) (30)
Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxide (1984) (30)
Effect of N 2 anneal on thin HfO 2 layers studied by conductive atomic force microscopy (2004) (30)
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices. (2013) (29)
N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C (2004) (29)
Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual Substrates (2008) (29)
Mapping interfacial excess in atom probe data. (2015) (28)
Spin‐seeding approach for diamond growth on large area silicon‐wafer substrates (2012) (28)
Formation mechanism of 2D SnS2 and SnS by chemical vapor deposition using SnCl4 and H2S (2018) (28)
Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer (2001) (28)
Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane (2010) (28)
Diamond tips and cantilevers for the characterization of semiconductor devices (1999) (27)
Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions (2002) (27)
Industrial application of atom probe tomography to semiconductor devices (2017) (27)
On the analysis of the activation mechanisms of sub-melt laser anneals (2008) (27)
Sub-10 nm low current resistive switching behavior in hafnium oxide stack (2016) (27)
Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy (1999) (27)
Conductive-AFM tomography for 3D filament observation in resistive switching devices (2013) (27)
Mass and energy dependence of depth resolution in secondary‐ion mass spectrometry experiments with iodine, oxygen, and cesium beams on AlGaAs/GaAs multilayer structures (1989) (27)
Qualification of spreading resistance probe operations (2000) (26)
On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films (2014) (26)
Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles (2006) (26)
Sub-100 nm2 Cobalt Interconnects (2018) (26)
Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices (2014) (26)
Conformal Doping of FINFET's: A Fabrication and Metrology Challenge (2008) (26)
Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples (2000) (26)
High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge (2008) (26)
Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM (2015) (25)
Impact of crystallization behavior of SrxTiyOZ films on electrical properties of metal-insulator-metal capacitors with TiN electrodes (2010) (25)
The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs (2009) (25)
Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2). (2015) (25)
Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth (2004) (25)
Mesoscopic physical removal of material using sliding nano-diamond contacts (2018) (25)
Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon. (2013) (25)
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (2010) (25)
Characteristics of cross-sectional atom probe analysis on semiconductor structures. (2011) (25)
High-throughput ion beam analysis at imec (2017) (25)
C-AFM characterization of the dependence of HfAlO x electrical behavior on post-deposition annealing temperature (2004) (24)
Impurity Incorporation during Copper Electrodeposition in the Curvature-Enhanced Accelerator Coverage Regime (2005) (24)
Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation (2012) (24)
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions (2011) (24)
Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane (1987) (24)
Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium (2009) (24)
Impact of probe penetration on the electrical characterization of sub-50 nm profiles (2002) (24)
Dopant/carrier profiling for 3D-structures (2014) (23)
Quantitative AES and XPS investigation of magnetron sputtered TiNx films (1989) (23)
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches (2010) (23)
A 0.314/spl mu/m/sup 2/ 6T-SRAM cell build with tall triple-gate devices for 45nm applications using 0.75NA 193nm lithography (2004) (23)
High resolution elastic recoil detection (2004) (23)
Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal–oxide–semiconductor technology using scanning spreading resistance microscopy (2004) (23)
Transient effects in SIMS analysis for different angles of incidence of an O+2 primary ion beam (1985) (22)
Recent Developments in the Interpretation of Spreading Resistance Profiles for VLSI‐Technology (1990) (22)
Record low contact resistivity to n-type Ge for CMOS and memory applications (2010) (22)
Comparison of two-dimensional carrier profiles in metal–oxide– semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling (2000) (22)
Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition (2008) (22)
Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates (2018) (22)
Oxygen induced broadening effects studied by RBS and SIMS (1986) (22)
Progressive vs. abrupt reset behavior in conductive bridging devices: A C-AFM tomography study (2014) (22)
Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts. (2017) (21)
A Spreading Resistance‐Based Technique for Two‐Dimensional Carrier Profiling (1993) (21)
Carrier distribution in silicon devices by atomic force microscopy on etched surfaces (1994) (21)
Analysis of the Excellent Memory Disturb Characteristics of a Hourglass-Shaped Filament in Al2O3/Cu-Based CBRAM Devices (2015) (20)
Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1-xSnx films (2015) (20)
3D-carrier profiling in FinFETs using scanning spreading resistance microscopy (2011) (20)
Integrating diamond pyramids into metal cantilevers and using them as electrical AFM probes (2001) (20)
Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks (2003) (20)
RBS, AES and XPS analysis of ion beam induced nitridation of Si and SiGe alloys (1994) (20)
Practicalities and limitations of scanning capacitance microscopy for routine integrated circuit characterization (2000) (20)
Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives (2017) (20)
Non-destructive characterization of extended crystalline defects in confined semiconductor device structures. (2018) (20)
Combination of high‐resolution RBS and angle‐resolved XPS: accurate depth profiling of chemical states (2008) (20)
Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices (2008) (20)
Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions (2006) (20)
Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy (2002) (20)
Toward accurate composition analysis of GaN and AlGaN using atom probe tomography (2018) (20)
An (un)solvable problem in SIMS: B-interfacial profiling (2003) (20)
Diamond scanning probes with sub-nanometer resolution for advanced nanoelectronics device characterization (2016) (19)
Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach (2007) (19)
Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge (2009) (19)
Two-dimensional carrier mapping at the nanometer-scale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy (2011) (19)
The fate of the (reactive) primary ion: Sputtering and desorption (2008) (19)
Improved quantification and detection limits for oxygen analysis in AlxGa1−x As/GaAs multilayers with secondary ion mass spectroscopy (1989) (19)
Characterization of Threading Dislocations in Thin Germanium Layers by Defect Etching: Toward Chromium and HF-Free Solution (2008) (19)
Self focusing SIMS: probing thin film composition in very confined volumes (2016) (19)
Two‐dimensional carrier profiling (1992) (19)
MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics (2017) (19)
Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors (2014) (19)
Damage accumulation and dopant migration during shallow As and Sb implantation into Si (2004) (18)
Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers (2016) (18)
Scalability of valence change memory: From devices to tip-induced filaments (2016) (18)
New aspects of nanopotentiometry for complementary metal–oxide–semiconductor transistors (2000) (18)
Quantitative AES analysis of Ti silicide and Co silicide films (1988) (18)
Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy (2009) (18)
Light absorption in conical silicon particles. (2013) (18)
Effects of oxygen flooding on sputtering and ionization processes during ion bombardment (1997) (18)
Simulation of the Phosphorus Profiles in a c-Si Solar Cell Fabricated Using POCl3 Diffusion or Ion Implantation and Annealing (2013) (18)
Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effects (1990) (18)
Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel (2010) (18)
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers (2005) (18)
XPS analysis of ion‐beam‐induced oxidation of silicon substrates (1992) (17)
Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor (2001) (17)
Influence of processing conditions on CoSi 2 formation in the presence of a Ti capping layer (2004) (17)
The future of high-K on pure germanium and its importance for Ge CMOS (2005) (17)
A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications (2013) (17)
Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping (2012) (17)
Interaction between Co and SiO2 (1998) (17)
Nucleation and growth mechanism of 2D SnS2 by chemical vapor deposition: initial 3D growth followed by 2D lateral growth (2018) (17)
Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy. (2013) (16)
Ion beam mixing and oxidation of a Si/Ge-multilayer under oxygen bombardment (1994) (16)
Evaluation of Time‐of‐Flight Secondary Ion Mass Spectrometry for Metal Contamination Monitoring on Si Wafer Surfaces (2000) (16)
On the determination of dopant/carrier distributions (1992) (16)
Tip-on-tip: a novel AFM tip configuration for the electrical characterization of semiconductor devices (1999) (16)
Characterization of ultra thin oxynitrides: A general approach (2000) (16)
Influence of elastic scattering of photoelectrons on angle-resolved x-ray photoelectron spectroscopy (2007) (16)
Recent progress and insights in two‐dimensional carrier profiling using scanning spreading resistance microscopy (2003) (16)
Failure mechanisms of silicon-based atom-probe tips. (2009) (16)
In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates (2012) (16)
Systematic study of shallow junction formation on germanium substrates (2011) (15)
Sheet resistance corrections for spreading resistance ultrashallow profiling (1996) (15)
Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques (2003) (15)
High precision micro-scale Hall effect characterization method using in-line micro four-point probes (2008) (15)
On the reliability of SIMS depth profiles through HfO2-stacks (2004) (15)
Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates (2006) (15)
TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films (2003) (15)
Epitaxy solutions for Ge MOS technology (2006) (15)
Modeling of bombardment induced oxidation of silicon (2001) (15)
Sacrificial Self-Assembled Monolayers for the Passivation of GaAs (100) Surfaces and Interfaces (2016) (15)
(Invited) Selective-Area Metal Organic Vapor-Phase Epitaxy of III-V on Si: What About Defect Density? (2014) (15)
Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth (2005) (14)
Residual damage in B+ and –implanted Si (1985) (14)
Towards Sub-10 nm carrier profiling with spreading resistance techniques (2001) (14)
Microfabricated diamond tip for nanoprobing (2009) (14)
Simulation of the Anneal of Ion Implanted Boron Emitters and the Impact on the Saturation Current Density (2012) (14)
Depth profiling of light-Z elements with elastic resonances: Oxygen profiling with the 3.045 MeV 16O(α, α)16O resonance (1992) (14)
Accurate electrical activation characterization of CMOS ultra-shallow profiles (2004) (14)
Diameter-dependent boron diffusion in silicon nanowire-based transistors (2013) (14)
Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks (2012) (14)
Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability (2008) (14)
3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography. (2013) (14)
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films (2016) (13)
Impact of repetitive and random surface morphologies on the ripple formation on ion bombarded SiGe-surfaces (2008) (13)
Bipolar Switching Characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni (2010) (13)
Probing doping conformality in fin shaped field effect transistor structures using resistors (2008) (13)
Voltage-controlled reverse filament growth boosts resistive switching memory (2018) (13)
Revealing the 3-dimensional shape of atom probe tips by atomic force microscopy. (2018) (13)
Assessment of profile broadening during sputtering (1986) (13)
Cluster formation during annealing of ultra-low-energy boron-implanted silicon (2000) (13)
Measurement and simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers (2001) (13)
Evolution of (001) and (111) facets for selective epitaxial growth inside submicron trenches (2014) (13)
Fabrication of conductive atomic force microscope probes and their evaluation for carrier mapping (2003) (13)
Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology (2010) (13)
Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy (2016) (13)
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM (2005) (13)
Progress in the physical modeling of carrier illumination (2006) (13)
On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1−x)Sn(x) unraveled with atom probe tomography (2015) (13)
Unravelling stacking order in epitaxial bilayer MX2 using 4D-STEM with unsupervised learning (2020) (13)
Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium (2009) (12)
A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond (2014) (12)
Micro-uniformity during laser anneal : metrology and physics (2008) (12)
Impact of the Ge concentration on the ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation (2004) (12)
1mA/um-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D (2011) (12)
Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition (2012) (12)
On the correlation between Si+ yields and surface oxygen concentration using in situ SIMS-LEIS (2003) (12)
The band structure of ALCVD AlZr- and AlHf-oxides as measured by XPS (2004) (12)
Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates (2010) (12)
Edge-enhanced Raman scattering in narrow sGe fin field-effect transistor channels (2015) (12)
Characterization of nickel silicides using EELS‐based methods (2010) (12)
Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer Substrates (2006) (12)
Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing (2008) (12)
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors (2008) (12)
Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si Fins (2014) (12)
Spreading resistance roadmap towards and beyond the 70 nm technology node (2002) (12)
Development and Synchrotron‐Based Characterization of Al and Cr Nanostructures as Potential Calibration Samples for 3D Analytical Techniques (2018) (12)
Impact of the environmental conditions on the electrical characteristics of scanning spreading resistance microscopy (2008) (12)
Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition (2011) (12)
Towards a physical understanding of spreading resistance probe technique profiling (1994) (12)
45 nm nMOSFET with metal gate on thin SiON driving 1150 /spl mu/A//spl mu/m and off-state of 10nA//spl mu/m (2004) (12)
Cesium near-surface concentration in low energy, negative mode dynamic SIMS (2008) (12)
Influence of oxygen desorption on in situ analysis of the surface composition during O2+ bombardment of Si (2007) (12)
Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line (2004) (11)
The flexoelectric effect in Al-doped hafnium oxide. (2018) (11)
Evolution of phosphorus-vacancy clusters in epitaxial germanium (2019) (11)
On the determination of two-dimensional carrier distributions (1995) (11)
Novel junction design for NMOS Si Bulk-FinFETs with extension doping by PEALD phosphorus doped silicate glass (2015) (11)
Electrically active, ion implanted boron at the solubility limit in silicon (1993) (11)
Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantification. (2019) (11)
Nanoscale post-breakdown conduction of HfO/sub 2//SiO/sub 2/ MOS gate stacks studied by enhanced-CAFM (2005) (11)
Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach (2006) (11)
Direct measurement of l/sub eff/ and channel profile in MOSFETs using 2-D carrier profiling techniques (1998) (11)
Effects of buried grain boundaries in multilayer MoS2 (2019) (11)
Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation (2006) (11)
Ion-implantation-based low-cost Hk/MG process for CMOS low-power application (2010) (11)
Two‐dimensional spreading resistance profiling: Recent understandings and applications (1994) (11)
Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation. (2018) (11)
Peel-off probe: a cost-effective probe for electrical atomic force microscopy (2000) (11)
Self-focusing SIMS: A metrology solution to area selective deposition (2019) (11)
Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice (2020) (11)
Depth resolution optimization for low-energy ERDA (2007) (11)
High-mobility Si1−xGex-channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths (2010) (11)
Development and optimization of scanning spreading resistance microscopy for measuring the two‐dimensional carrier profile in solar cell structures (2011) (11)
Advanced Raman Spectroscopy Using Nanofocusing of Light (2017) (10)
Thin layer composition profiling with angular resolved x-ray photoemission spectroscopy: Factors affecting quantitative results (2012) (10)
Study of Ni-Silicide Contacts to Si:C Source/Drain. (2006) (10)
Heated implantation with amorphous Carbon CMOS mask for scaled FinFETs (2013) (10)
X‐ray photoelectron spectroscopy analysis of ion‐beam‐induced oxidation of GaAs and AlGaAs (1992) (10)
Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping (2015) (10)
Thermodynamic modelling of InAs/InP(0 0 1) growth towards quantum dots formation by metalorganic vapor phase epitaxy (2019) (10)
A new spreading resistance correction scheme combining variable radius and barrier resistance with epilayer matching (1992) (10)
Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures (2005) (10)
Boron pocket and channel deactivation in nMOS transistors with SPER junctions (2006) (10)
Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM (2016) (10)
Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry (2015) (10)
Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs (2013) (10)
Fabrication and characterization of full diamond tips for scanning spreading-resistance microscopy (2004) (10)
Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment (2019) (10)
Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques (2000) (10)
Anisotropic etching of inverted pyramids in the sub-100 nm region (1997) (10)
Assessing the resolution limits of scanning spreading resistance microscopy and scanning capacitance microscopy. (2003) (10)
Need to incorporate the real micro-contact distribution in spreading resistance correction schemes (2000) (10)
The effect of oxygen during irradiation of silicon with low energy Cs+ ions (2009) (10)
Advanced phosphorous emitters for high efficiency Si solar cells (2009) (10)
Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, HI) solutions (1995) (10)
Cesium/xenon dual beam depth profiling with TOF-SIMS: measurement and modeling of M+, MCs+, and M2Cs2+ yields (2004) (10)
Epitaxial Chemical Vapor Deposition of Silicon on an Oxygen Monolayer on Si(100) Substrates (2013) (10)
Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices (2014) (10)
The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures☆ (2012) (10)
The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension (2006) (9)
Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures (2008) (9)
Electrical probing of B‐doped diamond seeds embedded into the interfacial layer of a conductive diamond film (2014) (9)
On the influence of crater edges and neutral beam component on impurity profiles from raster scanning SIMS (1982) (9)
Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions (2007) (9)
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy (2018) (9)
Conductive filaments multiplicity as a variability factor in CBRAM (2015) (9)
Process modeling for doped regions formation on high efficiency crystalline silicon solar cells (2014) (9)
Superior N- and PMOSFET scalability using carbon co-implantation and spike annealing (2006) (9)
Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition (2015) (9)
Advanced carrier depth profiling on Si and Ge with micro four-point probe (2008) (9)
On the spatial resolution of scanning spreading resistance microscopy : experimental assessment and electro‐mechanical modeling (2005) (9)
USJ metrology : from 0D to 3D analysis. (2007) (9)
Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS (2006) (9)
The analysis of a thin SiO2/Si3N4/SiO2 stack: A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering and secondary ion mass spectrometry (2006) (9)
Laser annealed junctions: Pocket profile analysis using an atomistic kinetic Monte Carlo approach (2010) (9)
Quantitative auger electron spectroscopy of AlxGa1-xAs layers and superstructures grown by MBE (1988) (9)
0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications (2008) (9)
Effect of N2 annealing on AlZrO oxide (2003) (9)
Evidences of areal switching in Vacancy-Modulated Conductive Oxide (VMCO) memory (2017) (9)
Nanoprober-based EBIC measurements for nanowire transistor structures (2013) (9)
Fabrication and use of metal tip and tip-on-tip probes for AFM-based device analysis (1998) (9)
Nanofocusing of light into semiconducting fin photonic crystals (2016) (9)
Crystallization resistance of barium titanate zirconate ultrathin films from aqueous CSD: a study of cause and effect (2009) (9)
Electrical Characterization of Ultrashallow Dopant Profiles (2000) (9)
High sensitivity Rutherford backscattering spectrometry using multidetector digital pulse processing (2018) (9)
Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures (2017) (9)
Mounting of molded AFM probes by soldering (2000) (9)
Suppression of boron incorporation at the early growth phases of boron‐doped diamond thin films (2015) (9)
Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs. (2019) (9)
SSRM and SCM observation of modified lateral diffusion of As, BF2 and Sb induced by nitride spacers. (2001) (9)
Sputter rate variations in silicon under high-k dielectric films (2004) (9)
A correlative ToF-SIMS/SPM methodology for probing 3D devices. (2020) (8)
Atomic insight into Ge₁₋xSnx using atom probe tomography. (2013) (8)
Rutherford backscattering spectrometry analysis of InGaAs nanostructures (2019) (8)
Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas: Afterglow of a NF3 plasma (1998) (8)
Insights into the nanoscale lateral and vertical phase separation in organic bulk heterojunctions via scanning probe microscopy. (2016) (8)
Analysis of pocket profile deactivation and its impact on Vth variation for Laser annealed device using an atomistic kinetic Monte Carlo approach (2010) (8)
Quantitative analysis of W(N), TiW and TiW(N) matrices using XPS, AES, RBS, EPMA and XRD (1991) (8)
Ultra shallow junction profiling (2000) (8)
Two-dimensional profiling in silicon using conventional and electrochemical selective etching (1998) (8)
Conductive diamond probes with electroplated holder chips (2007) (8)
High resolution SIMS and neutron depth profiling of boron through oxide–silicon interfaces (1985) (8)
Automatic generation of shallow electrically active dopant profiles from spreading resistance measurements (1994) (8)
Characterization of silicon cantilevers with integrated pyramidal metal tips in atomic force microscopy (1999) (8)
Modeling of junction formation in scaled Si devices (2014) (8)
Electron beam induced etching of silicon with SF6 (2010) (8)
Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics (2008) (8)
High-k Dielectrics and Metal Gates for Future Generation Memory Devices (2009) (8)
A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions (2015) (8)
Physical characterisation of high-k gate stacks deposited on HF-last surfaces (2001) (8)
Zero-energy SIMS: Towards quantitative depth profiling with high spatial and high depth resolution (2008) (8)
Composition quantification of microelectronics multilayer thin films by EDX: toward small scale analysis (2009) (8)
Bias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy (2003) (8)
Boron outdiffusion from poly- and monocrystalline CoSi2 (1991) (8)
High performance n-MOS finFET by damage-free, conformal extension doping (2011) (8)
Oxygen distribution in silicon‐on‐insulator layers obtained by zone melting recrystallization (1990) (8)
Fast micro Hall effect measurements on small pads (2011) (8)
Structural characterization of SnS crystals formed by chemical vapour deposition (2017) (8)
2D-TCAD Process Calibration for a High Speed QSA SiGe:C HBT Verified with SSRM (2006) (8)
Nitrogen analysis in high-k stack layers: a challenge (2004) (8)
Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale with CAFM (2005) (8)
Laser Annealed Junctions: Process Integration Sequence Optimization for Advanced CMOS Technologies (2007) (8)
As-Deposited Superconducting Thin Films by Electron Cyclotron Resonance-Assisted Laser Ablation for Application in Micro-Electronics (1991) (7)
Electrical properties of amino SAM layers studied with conductive AFM (2013) (7)
Carrier Illumination as a tool to probe implant dose and electrical activation (2003) (7)
Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process (1993) (7)
Fabrication of a full metal AFM probe and its applications for Si and InP device analysis (1999) (7)
Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature. (2019) (7)
Mechanisms of arsenic segregation to the Ni2Si/SiO2 interface during Ni2Si formation (2005) (7)
CHAPTER 8 - Impurity Profile of Implanted Ions in Silicon (1981) (7)
Evaluation of the junction delineation accuracy and reproducibility with the SSRM technique (2007) (7)
SSRM and SCM Observation of Enhanced Lateral As- and BF2-diffusion Induced by Nitride Spacers (2000) (7)
Influence of copper purity on microstructure and electromigration (2004) (7)
In situ RBS analysis of ion beam mixing during low energy sputtering (1993) (7)
Comparative Growth Kinetics Of Sige In A Commercial Reduced Pressure Chemical Vapour Deposition Epi Reactor And Anomalies During Growth of Thin Si Layers on Sige (1998) (7)
Cluster effect on projected range of 30 keV C60+ in silicon (2011) (7)
Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM (2005) (7)
Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth (1995) (7)
Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O2 (2004) (7)
Two-dimensional carrier profiling with sub-nm resolution using SSRM: From basic concept to TCAD calibration and device tuning (2009) (7)
NI (PT) SI Thermal Stability Improvement by Carbon Implantation (2008) (7)
The unexpected effects of crystallization on Ta2O5 as studied by HRTEM and C-AFM (2013) (7)
Interaction between Al–Si melt and dielectric layers during formation of local Al‐alloyed contacts for rear‐passivated Si solar cells (2012) (7)
Analysis of dopant diffusion and defects in SiGe channel Quantum Well for Laser annealed device using an atomistic kinetic Monte Carlo approach (2011) (7)
Scanning spreading resistance microscopy of fully depleted silicon-on-insulator devices (2003) (7)
Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments (2011) (7)
Dopant and carrier profiling for 3D-device architectures (2011) (7)
An efficient smoothing algorithm for spreading resistance calculations (1988) (7)
Inorganic material profiling using Arn+ cluster: Can we achieve high quality profiles? (2018) (7)
Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures (2010) (7)
Thermal stability and scalability of Zr-aluminate-based high-k gate stacks (2002) (7)
Modeling and Experiments of Boron Diffusion During Sub-Millisecond Non-Melt Laser Annealing in Silicon (2006) (7)
Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques (2005) (7)
Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy (2017) (7)
Diamond nano-particle seeding for tip moulding application (2013) (7)
Boron doping in hot filament MCD and NCD diamond films (2009) (6)
Segregation of Cu on etched and non-etched Al(Cu) surface (1998) (6)
Strained Ge FinFET structures fabricated by selective epitaxial growth (2014) (6)
(Invited) Monolithic Integration of III-V Semiconductors by Selective Area Growth on Si(001) Substrate: Epitaxy Challenges & Applications (2015) (6)
TiN scanning probes for electrical profiling of nanoelectronics device structures (2012) (6)
RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon (2013) (6)
ALD HfO 2 surface preparation study (2002) (6)
Atom Probe Tomography for 3D-dopant analysis in FinFET devices (2012) (6)
Advances in optical carrier profiling through high-frequency modulated optical reflectance (2008) (6)
(Invited) Selective-Area Metal Organic Vapor-Phase Epitaxy of InGaAs/InP Heterostrucures on Si for Advanced CMOS Devices (2014) (6)
Towards routine, quantitative two-dimensional carrier profiling with scanning spreading resistance microscopy (2001) (6)
The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements (2020) (6)
Impact of three-dimensional lateral current flow on ultrashallow spreading resistance profiles (2002) (6)
A contact model for Poisson‐based spreading resistance correction schemes incorporating Schottky barrier and pressure effects (1992) (6)
Analysis of ultra-thin HfO(2)/SiON/Si(001): comparison of three different techniques. (2010) (6)
Irradiation-induced damage in porous low-k materials during low-energy heavy-ion elastic recoil detection analysis (2006) (6)
Analysis of junctions formed in strained Si/SiGe substrates (2004) (6)
Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmas (1997) (6)
Overcoated diamond tips for nanometer-scale semiconductor device characterization (2015) (6)
High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies (2003) (6)
On the Nature of Weak Spots in High-k Layers Submitted to Anneals (2004) (6)
Micro Four-Point Probe and Micro Hall Effect: Methods for Reliable Electrical Characterization of Ultra-Shallow Junctions (2012) (6)
Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic Monte Carlo approach and Scanning Spreading Resistance Microscopy (SSRM) (2008) (6)
Towards the Monolithic Integration of III-V Compound Semiconductors on Si: Selective Area Growth in High Aspect Ratio Structures vs. Strain Relaxed Buffer-Mediated Epitaxy (2012) (6)
Enhanced light coupling into periodic arrays of nanoscale semiconducting fins (2018) (6)
Investigation of the formation of M2+-molecular ions in sputtering processes (1999) (6)
Thermal Stability of High k Layers (2002) (6)
The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNxCy films (2006) (6)
Strain and Compositional Analysis of (Si)Ge Fin Structures Using High Resolution X‐Ray Diffraction (2017) (6)
Impact of inactive dopants in chemical vapor deposition layers on photomodulated optical reflectance (2008) (6)
Growth rate for the selective epitaxial growth of III–V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments (2014) (6)
Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth (2005) (6)
Compositional depth profiling of TaCN thin films (2012) (6)
Impact of the apex of an elongated dielectric tip upon its light absorption properties (2014) (6)
Stoichiometry changes during low energy oxygen bombardment (1995) (6)
Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers (2018) (6)
Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe (2018) (6)
Shallow boron implantations in Ge and the role of the pre-amorphization depth (2008) (6)
On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction (2013) (5)
Understanding physico-chemical aspects in the depth profiling of polymer: fullerene layers. (2016) (5)
On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications (2018) (5)
Various advanced capabilities of the RBS setup at IMEC (1992) (5)
Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels (2016) (5)
Secondary ion mass spectrometry-spreading resistance profiling study on the outdiffusion from poly- and monocrystalline cobaltsilicide (1992) (5)
Oxygen redistribution in silicon during zone melting recrystallization (1990) (5)
Advanced characterization of high-k materials: A nuclear approach (2002) (5)
1mA/um-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D (2011) (5)
Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)2/Al2O3 Filamentary Switching Devices. (2018) (5)
Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures. (2018) (5)
Towards nondestructive carrier depth profiling (2006) (5)
One- and two-dimensional dopant/carrier profiling for ULSI (1998) (5)
Study of thermal stability of nickel silicide by X-ray reflectivity (2005) (5)
The junction challenges in the FinFETs device (2006) (5)
Diamond nanoprobes for electrical probing of nanoelectronics device structures (2014) (5)
Nanoscale Three‐Dimensional Characterization with Scalpel SPM (2017) (5)
Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization (2001) (5)
Physical Characterization of Ultra‐thin High‐k Dielectric (2007) (5)
Extracting active dopant profile information from carrier illumination power curves (2006) (5)
Reliable Two-Dimensional Carrier Profiling by Scanning Spreading Resistance Microscopy on InP-Based Devices with Fast Quantification Procedure (2002) (5)
Enhancing the defect contrast in ECCI through angular filtering of BSEs. (2019) (5)
Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure (2016) (5)
Characterization of high and low k dielectrica using low-energy Time of Flight Elastic Recoil Detection (2005) (5)
Erratum: “Experimental studies of dose retention and activation in fin field-effect-transistor-based structures” [J. Vac. Sci. Technol. B 28, C1H5 (2010)] (2010) (5)
Quantitative depth profiling of SiGe‐multilayers with the Atom Probe (2011) (5)
Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry (2006) (5)
Electrical characterization of InGaAs ultra-shallow junctions (2010) (5)
Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy (2016) (5)
FinFETs and Their Futures (2011) (5)
Challenges for introducing Ge and III/V devices into CMOS technologies (2012) (5)
Quantitative Two-Dimensional Carrier Mapping in Silicon Nanowire-Based Tunnel-Field Effect Transistors Using Scanning Spreading Resistance Microscopy (2010) (5)
Chemical analysis of nickel silicides with high spatial resolution by combined EDS, EELS and ELNES (2010) (5)
Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions (2008) (5)
Physcial characterization of ultrathin high k dielectrics (2002) (5)
Sub-nanometer characterization of nanoelectronic devices (2013) (5)
Electrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers (2010) (5)
Beyond SRP: Quantitative carrier profiling with M4PP (2006) (5)
Spreading resistance correction formula more suited for the Gauss-Laguerre quadrature (1981) (5)
Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations (2011) (5)
Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS (2018) (5)
Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves (2010) (5)
Electrothermal theory of photomodulated optical reflectance on active doping profiles in silicon (2010) (4)
Si nanoripples: A growth dynamical study (2012) (4)
Physical characterization of mixed HfAlOx layers by complementary analysis techniques (2004) (4)
Electrical Evaluation of the Epi/Substrate Interface Quality after Different In-Situ and Ex-Situ Low-Temperature Pre-Epi Cleaning Methods (1998) (4)
Heavily phosphorus‐doped epitaxial Si deposited by low‐temperature plasma‐enhanced chemical vapor deposition (1991) (4)
Optimal laser positioning for laser-assisted atom probe tomography. (2013) (4)
Accurate carrier profiling of n-type GaAs junctions (2008) (4)
Tuning the switching behavior of conductive-bridge resistive memory by the modulation of the cation-supplier alloys (2017) (4)
Time-of-flight telescope for heavy-ion RBS (2007) (4)
Characterization of vertical RESURF diodes using scanning probe microscopy (2003) (4)
InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(0 0 1) substrate (2020) (4)
Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching (2017) (4)
Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon (2002) (4)
Comprehensive Study of the Fabrication of SGOI Substrates by the Ge Condensation Technique: Oxidation Kinetics and Relaxation Mechanism (2009) (4)
ToF-SIMS and XPS study of ion implanted 248nm deep ultraviolet (DUV) photoresist (2011) (4)
Scaling of high-k dielectrics towards sub-1nm EOT (2003) (4)
Junction strategies for 1x nm technology node with FINFET and high mobility channel (2012) (4)
Scaning probe tomography for advanced material characterization (2014) (4)
Composition analysis of III–V materials grown in nanostructures: The self-focusing-SIMS approach (2016) (4)
Ultra shallow junctions formed by sub-melt laser annealing (2006) (4)
Quantitation of major elements with secondary ion mass spectrometry by using M2+-molecular ions (1998) (4)
Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves (2008) (4)
Issues, achievements and challenges towards integration of high-k dielectrics (2002) (4)
Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices (2004) (4)
Nanoprober-Based Pick-and-Place Process for Site-Specific Characterization of Individual Carbon Nanotubes (2008) (4)
Insights in junction photovoltage based sheet resistance measurements for advanced complementary metal-oxide semiconductor (2008) (4)
Transient effects during SIMS depth profiling with oxygen (1988) (4)
Interpretation of TOF–SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation (2005) (4)
SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding (2000) (4)
Dopant/carrier profiling for ULSI (1998) (4)
Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission (2021) (4)
Studying Local Aluminum Back Surface Fields (Al-BSF) Contacts through Scanning Spreading Resistance Microscopy (SSRM) (2011) (4)
Particle emission from chemically enhanced electron-beam-induced etching of Si: An approach for zero-energy secondary-ion mass spectrometry (2009) (4)
Metal film characterization with qualified spreading resistance (2004) (4)
Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors (2009) (4)
X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry study of the role of Ti and TiN caps on the cobalt/SiO2 interface (1999) (4)
Minimizing the size of force‐controlled point contacts on silicon for carrier profiling (1996) (4)
Formation of buried α- and β- FeSi 2 in (100) Si by high dose ion implantation (1992) (4)
Analytical techniques for semiconductor materials and process characterization : proceedings of the satellite symposium to ESSDERC 89 Berlin (1990) (4)
Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-Si solar cells (2012) (4)
Probe penetration in spreading resistance measurements (1984) (4)
Analysis of dopant diffusion and defects in SiGe-channel Implant Free Quantum Well (IFQW) devices using an atomistic kinetic Monte Carlo approach (2012) (4)
Profile Changes and Self-sputtering during Low Energy Ion Implantation. (2002) (4)
Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations. (2019) (4)
X-ray absorption in pillar shaped transmission electron microscopy specimens. (2017) (4)
Carrier illumination for characterization of ultrashallow doping profiles (2004) (4)
Heavy-ion irradiation effects on passivated implanted planar silicon detectors (1992) (4)
Ion‐beam induced oxidation of GaAs and AlGaAs (1995) (4)
P implantation on doping of Ge: diffusion, activation, re-crystallization (2005) (4)
Characterization of post-etched photoresist and residues by various analytical techniques (2008) (4)
Precise nitrogen depth profiling by high-resolution RBS in combination with angle-resolved XPS (2010) (4)
ToF-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO2/Al2O3 oxides (2004) (4)
The Carbon co-implant with spike RTA solution for Boron extension (2006) (4)
Fast and Stable Sub-10uA Pulse Operation in W/SiO2/Ta/Cu 90nm 1T1R CBRAM Devices (2015) (4)
In situ observation by RBS of oxygen gettering during Cs sputtering of Si-based materials (1996) (4)
(A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGebuffer layers (2004) (4)
Junction Photovoltage (JPV) Techniques for Ultra-Shallow Junction Characterization (2007) (3)
Non-filamentary (VMCO) memory: A two-and three-dimensional study on switching and failure modes (2017) (3)
Engineering of the Polysilicon Emtter Interfacial Layer using Low Temperature Thermal Re-Oxidation in an LPCVD Cluster Tool (1995) (3)
Compositional characterization of nickel silicides by HAADF-STEM imaging (2011) (3)
Steady state oxygen surface content in oxygen sputtered silicon at impact energy of 5 keV per atom (2001) (3)
Ultra thin gate oxides for 0.1um heterojunction CMOS applications by the use of a sacrifical Si layer (1998) (3)
Removal of organic contamination from silicon surfaces (1996) (3)
Analytical characterization of new high k dielectric stacks (2000) (3)
Quasi Two-Dimensional Si-O Superlattices: Atomically Controlled Growth and Electrical Properties (2016) (3)
Critical dimension metrology using Raman spectroscopy (2020) (3)
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory (2017) (3)
ToF-SIMS profiling of HfO2/Si stacks: influence of sputtering condition of profile shape (2004) (3)
Investigation of the Lattice Defects in P Ion Implanted Silicon (1986) (3)
Influence of Trench Width on III-V Nucleation during InP Selective Area Growth on Patterned Si(001) Substrate (2014) (3)
Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation (2019) (3)
Understanding the effect of confinement in scanning spreading resistance microscopy measurements (2020) (3)
Electrical characterization of single nanometer-wide Si fins in dense arrays (2018) (3)
High resolution electrical characterization of laterally overgrown epitaxial InP (2003) (3)
(Invited) Stress Simulations of Si- and Ge-Channel FinFETs for the 14 nm-Node and Beyond (2013) (3)
Sputter-Induced Segregation of As in Si During SIMS Depth Profiling (1986) (3)
Characterization of conductive probes for atomic force microscopy (1999) (3)
Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width (2015) (3)
Nanoscale 3D characterisation of soft organic material using conductive scanning probe tomography (2019) (3)
Modifications in the Si valence band after ion‐beam‐induced oxidation (1994) (3)
Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition (2002) (3)
Epitaxy of III–V based channels on Si and transistor integration for 12-10nm node CMOS (2012) (3)
Quantitative Method to Determine Planar Defect Frequency in InAs Nanowires by High Resolution X-ray Diffraction (2015) (3)
Copper grain growth in reduced dimensions (2004) (3)
Gate stack preparation with high-k materials in a cluster tool (2001) (3)
Ion-induced pattern formation on indium tin oxide for alignment of liquid crystals (2015) (3)
Accurate Prediction of Device Performance Based on 2-D Carrier Profiles in the Presence of Extensive Mobile Carrier Diffusion (2014) (3)
A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx (2020) (3)
The Low‐frequency Noise of Strained Silicon n‐MOSFETs (2005) (3)
Cross-sectional nano-srp dopant profiling (1997) (3)
Practicalities and limitations of scanning capacitance microscopy for routine IC characterisation (1999) (3)
Reliable 2-D carrier profiling with SSRM on InP-based devices (2001) (3)
Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−x Sn x and Si y Ge1−x−y Sn x (2020) (3)
Formation of thin-films of monocrystalline cosi2 on (100) si (1991) (3)
Advanced characterisation: an indispensable tool for understanding ultra clean processing (1995) (3)
Quantitative analysis of impurities in suicide layers with SIMS (1987) (3)
Nano‐scale feature analysis achieving high effective lateral resolution with micro‐scale material characterization techniques: Application to back‐end processing (2015) (3)
Surface Characterisation of Si After HF Treatments and its Influence on the Dielectric Breakdown of Thermal Oxides (1992) (3)
Basic aspects of the formation and activation of boron junctions using plasma immersion ion implantation (2008) (3)
Considerations about multiple and plural scattering in heavy-ion low-energy ERDA (2009) (3)
Depth profiling of ZrO2/SiO2/Si stacks—a TOF-SIMS and computer simulation study (2004) (3)
Study of Sn migration during relaxation of Ge1‐xSnx layers using atom probe tomography (2012) (3)
Mass calibration of the energy axis in ToF-E elastic recoil detection analysis (2016) (3)
Local Arrangement of Substitutional C Atoms and the Thermal Stability of Epitaxial Si:C(P) Grown by CVD (2017) (3)
Cost-Effective Low $V_{t}$ Ni-FUSI CMOS on SiON by Means of Al Implant (pMOS) and $\hbox{Yb}{+}\hbox{P}$ Coimplant (nMOS) (2008) (3)
Surface characterization of InP trenches embedded in oxide using scanning probe microscopy (2015) (3)
The influence of oxygen on the analysis of a Pt/Si structure with secondary ion mass spectrometry (1993) (3)
Topside release of atomic force microscopy probes with molded diamond tips (2005) (2)
Growth kinetics and relaxation mechanism of very thin epitaxial Si films on (100) germanium (2005) (2)
N+/P and P+/N Junctions in Strained Si on Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure (2005) (2)
Hydrogen analysis in silicon and silicon nitride layers (1985) (2)
High-resolution scanning spreading resistance microscopy of surrounding-gate transistors (2004) (2)
Scanning Spreading Resistance Microscopy For 3D-Carrier Profiling in FinFET-based Structures (2008) (2)
Scanning Spreading Resistance Microscopy (SSRM): High resolution 2D and 3D carrier mapping of semiconductor nanostructures (2016) (2)
Epitaxial CoSi2 formation by a Cr or Mo interlayer (2000) (2)
Calibration of PIXE yields using binary thin films on Si (2014) (2)
On the rseries extraction techniques for sub-22nm CMOS finfet and SiGe technologies (2012) (2)
Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with Non‐Contact Junction Photo‐Voltage Metrology (2007) (2)
EXLE-SIMS: dramatically enhanced accuracy for dose loss metrology (2008) (2)
Sputtering phenomena of CoSi2 under low energy oxygen bombardment (1994) (2)
Characterization of different tip materials for SCM (2003) (2)
Surface analysis in the semiconductor industry: Present use and future possibilities (2020) (2)
The ADEQUAT project for development and transfer of 0.25 μm logic complementary metal–oxide–semiconductor modules (1994) (2)
Fabrication of cantilevers and double AFM tips for the NanoProfiler (2007) (2)
Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts (2011) (2)
The low-frequency noise in n-mosfets on strained silicon : Is there room for improvement? (2006) (2)
Electrical Activity of B and As Segregated at the Si-SiO 2 Interface (2002) (2)
Dopant profiling in NixSi1−x gates with secondary-ion-mass spectroscopy (2006) (2)
Two dimensional carrier profiling using scanning capacitance microscopy (2002) (2)
Carrier Profile Determination in Device Structures using AFM-Based Methods (1995) (2)
Ge1 -xSnx Optical Devices: Growth and Applications (2014) (2)
Monitoring of local and global temperature non-uniformities by means of Therma-Probe and Micro Four-Point Probe metrology (2009) (2)
Implantation and Activation of Phosphorus in Amorphous and Crystalline Germanium Layers (2013) (2)
Status and review of 2-D carrier profiling using scanning probe microscopy (1999) (2)
Influences of trace metal impurities on the thermal quenching of photoluminescence in hydrogenated amorphous silicon by homogeneous chemical vapor deposition (1990) (2)
Nanoscale effects of annealing on the electrical characteristics of hafnium based devices measured in a vacuum environment (2008) (2)
Experimental studies of dose retention and activation in FinFet-based structures (2009) (2)
Analysis and optimisation of new implantation and activation mechanisms in ultra shallow junction implants using Scanning Spreading Resistance Microscopy (SSRM) (2006) (2)
Ripple morphologies on ion irradiated Si1−xGex (2008) (2)
Novel Approach to Conformal FINFET Extension Doping (2011) (2)
APT Tip Shape Modifications During Analysis, Its Implications, and the Potential to Measure Tip Shapes in Real Time via Soft-X-Ray Ptychography (2019) (2)
Mapping Conductance and Carrier Distributions in Confined Three-Dimensional Transistor Structures (2019) (2)
Depth profiling with oxygen beams (1994) (2)
Composition analysis of III-V materials grown in nanostructures for semiconductor applications: the self focusing SIMS approach (2015) (2)
Physical characterization of ultrathin high k dielectrics (2003) (2)
Nonlinear study of photoelectrothermal modulated optical reflectance for active dopant profile extraction (2007) (2)
TEM techniques for two dimensional junction delineation in integrated circuits (1989) (2)
Scanning Spreading Resistance Microscopy as a Technique for Silicon Solar Cell Emitter Structure Characterization (2011) (2)
Ensemble RBS: probing the compositional profile of 3D microscale structures (2022) (2)
Junction formation in Ge by ion implantation (2007) (2)
B profile alteration by annealing in reactive ambients (2009) (2)
Investigation of the formation process of MCs+-molecular ions during sputtering (2000) (2)
Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition (2001) (2)
Enhanced activation of standard and cocktail spike annealed junctions with additional sub-melt laser anneal (2006) (2)
Study of submelt laser induced junction nonuniformities using Therma-Probe (2010) (2)
The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy (2018) (2)
Junction Architectures for Planar Devices (2007) (2)
Non‐destructive characterization of saw damage in silicon photovoltaics substrates by means of photomodulated optical reflectance (2012) (2)
Investigation of cross‐contamination during Si‐implantion in GaAs with SIMS (1988) (2)
Nanopotentiometry: Data Interpretation and Quantification (1999) (2)
Channeling detection using position sensitive detectors (1993) (2)
SIMS Analysis on the Transistor Scale: Probing Composition and Dopants in Nonplanar, Confined 3D Volumes (2016) (2)
Application of SCM to process development of novel devices (2003) (2)
Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties (2021) (2)
Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I) (2008) (2)
High Hole Mobility SGOI Substrates Obtained by the Germanium Condensation Technique (2008) (2)
Diamond tips for automated electrical probing inside a scanning electron microscopy system (2011) (2)
Chemical effects during ripple formation with isobaric ion beams (2011) (2)
Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes (2006) (1)
Direct measurement of semiconductors surface states parameters using Kelvin probe force microscopy (2003) (1)
Quantitative study of background signals from crater edges and surroundings in depth profiling of small areas with secondary ion mass spectrometry (1993) (1)
The fabrication of a novel composite GaAs/SiO2 nucleation layer on silicon for heteroepitaxial overgrowth by molecular beam epitaxy (1991) (1)
Quantification of elements at the Si/SiO2-interface (2000) (1)
Impact of Fluorine co‐implant on Boron Diffusion during Non‐melt Laser Annealing (2006) (1)
Germanium Deep-Submicron p -FET and n -FET Devices, Fabricated on Germanium-On-Insulator Substrates (2007) (1)
Optical force measurement system with mirror probe for nanoprobing inside a scanning electron microscope (2010) (1)
Carrier profiling with fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP. (2019) (1)
Stability analysis of correction schemes for spreading resistance measurements (1990) (1)
Conformal ultra shallow junctions by vapor phase doping with boron (2008) (1)
Efficiency of ozonated DI water in removing organic contamination (1998) (1)
Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry (2022) (1)
Compatibility of polysilicon with HFO2-BASED gate dielectrics for CMOS applications (2003) (1)
Nanoelectronics and More‐than‐Moore at IMEC (2011) (1)
CVD Epitaxial Growth of GeSn Opens a New Route for Advanced Sn-Based Logic and Photonics Devices (2012) (1)
Improved characterization of high-k degradation with vacuum C-AFM (2008) (1)
Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor (2001) (1)
Nanometer scale carrier profiling with scanning probes (2001) (1)
Electrical Contact Formation in Micro Four‐Point Probe Measurements (2019) (1)
Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium (2008) (1)
Ge Epitaxy on (100) Ge: High Growth Rates at Low Temperature from GeH4 using N2 as a Carrier Gas (2006) (1)
Electrical Characterization of Ultra Shallow Dopant Profiles (1999) (1)
Analysis of dopant diffusion and defects in Fin structure using an atomistic kinetic Monte Carlo approach (2013) (1)
Physical characterisation of high-gate stacks (2002) (1)
Direct Observation of 2-D Dopant Profiles of MOSFETs Activated by Millisecond Anneal (2006) (1)
Impurity determination in narrow copper lines (2004) (1)
Structural and electrical characterization of carbon nanotube interconnects by combined transmission electron microscopy and scanning spreading resistance microscopy (2011) (1)
Dopant characterization round-robin study performed on two-dimensional test structures fabricated at Texas Instruments (1998) (1)
Scanning spreading resistance microscopy for carrier profiling beyond 32nm node (2012) (1)
Dopants for N and P junctions in germanium (2006) (1)
Bias-induced junction displacements in SSRM and SCM (2001) (1)
XPS-Analysis of Ion-Beam-Induced Oxidation (IBO) of Al x Ga 1−x As Substrates (1992) (1)
(Invited) Optimization of WAl2O3Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells (2013) (1)
The Prospect of Spatially Accurate Reconstructed Atom Probe Data Using Experimental Emitter Shapes (2021) (1)
Importance of determining the polysilicon dopant profile during process development (1996) (1)
Characterization of the B and As pile-up at the Si-SiO2 interface (2003) (1)
TEM Techniques for 2D Junction Delineation and Correlation with SIMS and SRP (1991) (1)
Photonic properties of periodic arrays of nanoscale Si fins (2019) (1)
Ion beam simulation SIMION OS/2: 1 200 000 points, multitasking and new options (1993) (1)
The behaviour of Si and CoSi2 during low energy nitrogen bombardment, with and without O2-flooding (1996) (1)
XPS and TOFSIMS studies of shallow Si/Si 1- x Ge x /Si layers (1999) (1)
Calibration of PIXE yields using Cu as a reference (2017) (1)
Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGe (2003) (1)
Void detection in copper interconnects using energy dispersive x-ray spectroscopy (2012) (1)
Size-dependent optical properties of periodic arrays of semiconducting nanolines. (2020) (1)
Ion Implantation of High Doses of Co in Si1−xGex Alloys (1991) (1)
Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content (2010) (1)
Material Studies on Si:C Epitaxial Films Grown by CVD (2014) (1)
Study of sub-melt laser damage annealing using Therma-Probe (2009) (1)
Development and Synchrotron-Based Characterization of Al and Cr Nanostructures as Potential Calibration Samples for 3D Analytical Techniques (Phys. Status Solidi A 6∕2018) (2018) (1)
The importance of H-passivation for low-temperature APCVD silicon epitaxy (1996) (1)
High-sensitivity Rutherford backscattering spectrometry employing an analyzing magnet and silicon strip detector (2019) (1)
Two-dimensional carrier profiling with scanning probes (2002) (1)
Monte Carlo simulation of the formation of M2+ - molecular ions sputtered from metallic materials (1998) (1)
Study of the altered layer formation under oxygen bombardment in combination with flooding (1994) (1)
Ionization probability changes of the Si+ ions during the transient for 3 keV O2+ bombardment of Si (2003) (1)
Stoichiometric analysis of superficial Ba doped Strontium Titanium Oxide layers using APT: the case of the missing Oxygen! (2021) (1)
An Investigation of Growth and Properties of Si Capping Layers Used in Advanced SiGe/Ge Based pMOS Transistors (2012) (1)
The role of fluorine with GE pre-amorphization in forming PMOS junctions for the 65-NM CMOS technology node (2003) (1)
Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology (2009) (1)
High k dielectric materials prepared by atomic layer CVD (2001) (1)
Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line (2004) (1)
Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2 (2016) (1)
Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers (2013) (1)
Accurate prediction of device performance : Reconstructing 2D-active dopant profiles from 2D-carrier profiles in the presence of extensive mobile carrier diffusion (2014) (1)
Depth profiling of B through silicide on silicon structures, using secondary ion‐mass spectrometry and resonant postionization mass spectrometry (1996) (1)
Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes (2019) (1)
Island growth in atomic layer deposition: a phenomenological model (2004) (1)
Source/Drain Materials for Ge nMOS Devices (2019) (1)
VLPCVD Heteroepitaxial Growth of Very Thin GE-Layers on Si-Substrates (1992) (1)
The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks (2004) (1)
Backside analysis of ultra-thin film stacks in microelectronics technology using X-ray photoelectron spectroscopy (2009) (1)
Sub-nanometer two-dimensional carrier profiling in silicon MOS technologies using high vacuum scanning spreading resistance microscopy (2009) (1)
Critical Parameters for Obtaining Low Particle Densities in an HF-Last Process (1992) (1)
(Invited) Raman Stress Measurements at the Nanoscale (2018) (1)
Effect of Initial Growth and Seeding Conditions on Boron Doped Hot Filament Diamond Films (2011) (1)
The Impact of Dummy Gate Processing on Si-Cap-Free SiGe Passivation: A Physical Characterization Study on Strained SiGe 25% and 45% (2017) (1)
Assessment of the near-surface profiling capabilities of SIMS (2003) (1)
Nanometer scale characterization of deep submicron devices (1999) (1)
Dislocation density and tetragonal distortion of a GaN epilayer on Si (1 1 1): A comparative RBS/C and TEM study (2014) (1)
Anomalous low-temperature dopant diffusion from in-situ doped polycrystalline and epitaxial Si layers into the monocrystalline Si substrate (1994) (1)
Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN. (2022) (1)
Limitations and concerns in the sheet resistance measurement of ultra-shallow dopant profiles (2003) (1)
Accurate micro Hall Effect measurements on scribe line pads (2009) (1)
Critical metrology for ultrathin high k dielectrics (2003) (1)
Probing the metal gate high k interactions by backside XPS and C-AFM (2011) (1)
Transfer from Rs-based to PMOR-based ion implantation process monitoring (2011) (1)
Characterisation of low energy antimony (2-5 keV) implantation into silicon (2002) (1)
Mass discrimination in elastic recoil detection analysis and its application to Al 2 O 3 on MoS 2 (2017) (1)
Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces (2014) (1)
A detailed study of SCM on cross-sectional and beveled junctions (2001) (1)
Towards the understanding of resistive contrast imaging in in situ dielectric breakdown studies using a nanoprober setup (2010) (1)
Towards a model for the formation of positive Si+ ions (2003) (1)
The thickness and temperature dependent resistivity of thin copper films (2003) (1)
Poly-gate structures manufactured in a cluster tool (1993) (1)
Progress towards an electrically active, ultra-shallow junction depth reference for carrier illumination, SRP and SIMS (2001) (1)
Positive secondary-ion mass spectrometric study of silicon nitride films on Si and GaAs with a cesium ion source (1985) (1)
Junction and Profile Analysis using Carrier Illumination (2002) (1)
On the understanding of local optical resonance in elongated dielectric particles (2014) (1)
Local Potential Measurements in Silicon Devices using Atomic Force Microscopy with Conductive Tips (1995) (1)
Study of the Tnfluence of Structural Properties on Si and Be Doping of Heteroepitaxial InAsSb on GaAs-Coated Si Substrates for Infrared Photodiodes (1990) (1)
Influence of the substrate doping level on spreading resistance profiling (1996) (1)
Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM (2005) (0)
Modification of the Ni surface morphology by low energy Ar+ ion bombardment (2009) (0)
Nm-scale characterization of deep submicron devices using scanning probes (2001) (0)
TOF-SIMS artifact in the analysis of ZrO2/SiO2/Si stacks (2001) (0)
Epitaxial growth challenges for advanced CMOS devices (2013) (0)
SIMS‐analysis of shallow implants in silicon (1986) (0)
Nanomanipulators in nanoelectronics (2010) (0)
Chemical and electrical dopant profiling for P-type junctions formed by solid phase epitaxial regrowth (2003) (0)
P+/N junction formation in thin strain relaxed buffer strained silicon substrates : The effect of the junction anneal (2006) (0)
Carrier Profiling in High Vacuum Using Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy (2020) (0)
Routine analysis of IBA data with Monte Carlo simulations (2006) (0)
Resonant laser-induced post-ionisation SIMS for application to semiconductor problems (1994) (0)
Impact of Sn on Ga activation in heteroepitaxial Ge1-xSnx layer (2012) (0)
Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties (2021) (0)
Ultra-shallow junction process development for the 45nm CMOS technology node using co-implantation (2004) (0)
In Situ Observation by RBS of Preferential Sputtering During Low Energy Ion Bombardment (1994) (0)
Composition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition (2013) (0)
Recent developments in nuclear methods in support of semiconductor characterization (2003) (0)
Invited) Electrical Atomic Force Microscopy for 2D Transition Metal Dichalcogenide Materials (2017) (0)
TOFSIMS investigation of ZrAlO oxide layers (2002) (0)
Selective Area Growth of InP on On-Axis Si(001) Substrates with Suppressed Antiphase Boundary Formation (2011) (0)
Characterization of Al/Ti and NiGe ohmic contacts to n-type GeSn CVD-grown layers (2012) (0)
The effect of oxygen in ULE-SIMS with Cs+ ions (2008) (0)
(Invited) Ge1-xSnx Materials: Challenges and Applications (2013) (0)
Characterization of low energy (2-5keV) implantation into Si (2002) (0)
Oxygen enhancement of ionization probabilities in Si (2000) (0)
Si passivation for Ge pMOSFETs: influence of Si precursor during RPCVD growth (2010) (0)
Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si (2014) (0)
Failure mechanisms for semiconductor atom probe tips (2008) (0)
Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers (2019) (0)
Advanced Material Characterization by TOFSIMS in Microelectronic (2005) (0)
Ion induced oxidation of silicon by oxygen and argon bombardment in combination with oxygen flooding (1998) (0)
Epitaxial growth in advanced MOS devices: challenges and solutions (2012) (0)
Dopant/carrier profiling for sub-45nm technologies (2005) (0)
Oxygen in Si epitaxial growth: from interface contamination to Si/O superlattice engineering (2013) (0)
Electrical characterization of submicrometer silicon devices by cross-sectional contact mode AFM (1997) (0)
Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All Around Devices (2019) (0)
Dopant/carrier profiling in nanostructures. (2010) (0)
Just Clean Enough Technology for the 21st Century (1995) (0)
Diamond tips for electrical AFM measurements with sub-nanometer resolution (2014) (0)
Co-implantation with conventional spike anneal solutions for 45 nm ultra-shallow junction formation (2005) (0)
Structural and electrical characterization of Al/ZrO2/Si capacitors (2012) (0)
Opportunities and Challenges in APT Metrology for Semiconductor Applications (2019) (0)
Fabrication of counter electrodes for scanning atomic probe (1999) (0)
Germanium surface segregation in the silicon passivation of Ge pMOSFETs: influence of the Si precursor (2010) (0)
Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects (2015) (0)
Application of atom probe tomography to epitaxial layers (2013) (0)
The state-of-the art of semiconductor profiling (2009) (0)
A Bottom-Up Volume Reconstruction Method for Atom Probe Tomography (2022) (0)
Study of GeSn strain relaxation and thermal stability in view of strain relaxed buffer layer applications (2014) (0)
Towards the ultimate depth resolution limits in SIMS (2010) (0)
Surface chemistry of deposition processes for epitaxial Si-O superlattices (2014) (0)
Build-up of the altered layer as function of the ion-fluency in Si-Ge (2000) (0)
Simultaneous formation of contacts and diffusion barriers for VLSI by rapid thermal silicidation of TiW (1990) (0)
Tailoring the enhanced transmission and absorption in 1D subwavelength semiconductor-based metamaterial high-contrast gratings (Conference Presentation) (2020) (0)
On the use of SF5/Ar/Ga for the analysis of very thin dielectrica with TOFSIMS (2001) (0)
Editorial: Nanoscale imaging and metrology of devices and innovative materials (2007) (0)
Development of the Ni(001) surface morphology upon low energy Ar+ ion bombardment (2009) (0)
Thin SiGe films in narrow structures: comparison of different analysis techniques for the thickness and composition measurements (2012) (0)
Scaling of Hf-based high-k dielectrics (2004) (0)
Apparent size effects on dopant activation in nanometer-wide Si fins (2021) (0)
Field evaporation of semiconductors under femtosecond laser illumination (2009) (0)
AFM-based tomography for probing the electrical properties in confined volumes at the nanometer scale (2013) (0)
Screen printing technology for backside metallisation of a-Si:H solar cells (1987) (0)
Resonance depth profiling of low-Z elements with target biasing applied to the 3.045 MeV 16O(α, α)16O resonance (1992) (0)
Ultra-Shallow Junctions Formed by Co-Implantation and Sub-Melt Laser Annealing (2006) (0)
Analysis and modeling of the HV-SSRM nanocontact on silicon (2009) (0)
Understanding mixing mechanisms by quantitative internal profiling (1997) (0)
Study of the transient phenomena in SIMS depth profiling using combined SIMS-RBS (1997) (0)
Photo-voltage versus micro-probe sheet resistance measurements on ultra-shallow structures (2009) (0)
The formation and removal of residue formed during TiN fluorocarbon plasma etching (1998) (0)
Modeling and Experiments of Dopant Diffusion and Defects for Laser annealed Junctions and advanced USJ (2008) (0)
AFMs reveal 3-D semiconductor features (1995) (0)
(Invited) Challenges and Solutions in Metrology for Complex, Confined Systems (2016) (0)
Structural and electrical properties of low temperature CVD-grown SiGe epitaxial layers (2016) (0)
Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit (2006) (0)
Improving the growth of HfO2 ALD layers by modifying growth parameters and reducing precursors contaminants (2005) (0)
SIMS Depth Profiling of Si in GaAs (1986) (0)
HfSiO Bulk Trap Density Controls the Initial $V_{\rm th}$ in nMOSFETs (2012) (0)
Challenges for atomic layer deposition in CMOS devices with high-mobility channel materials (2009) (0)
Combining TOF-SIMS with XPS and AFM to quantify organic surface coverages (2000) (0)
Probing Semiconductor Devices on the Nanometer Scale (1999) (0)
Insight in bonding configuration of O atoms on Si(100) surface for epitaxial Si-O superlattices (2014) (0)
Formation of (TixW1-x)Si2/(TixW1-x)N contacts by rapid thermal silicidation (1990) (0)
Stylus configuration and production process and use of styli (1997) (0)
Formation of (Ti x W 1-x )Si 2 /(Ti x W 1-x )N contacts by rapid thermal silicidation (1990) (0)
Electrical characterization of carbon nanotube based interconnects (2011) (0)
Selective Epitaxial Deposition of Ge on Si: Facet Formation and How to Avoid it (2008) (0)
Si/O Nano-lattices for engineered charge carrier mobility (2013) (0)
On the altered layer formation in III-V compounds (1994) (0)
Characterizing the two-dimensional doping concentration inside silicon-nanowires using scanning spreading resistance microscopy (2009) (0)
Quantitative analysis of silicon-silicon nitride interfacial regions using auger electron spectroscopy (1986) (0)
Sputter yield- and ionisation yield variations of 100% Ge bombarded by O2+ primary ions (2003) (0)
ULSI-device characterization using conductive scanning probes (1997) (0)
In-line and non-destructive analysis of epitaxial Si1-x-yGexCy (2003) (0)
Stress measurements in semiconductor devices using nano-focused Raman spectroscopy (2016) (0)
Surface characterization in microelectronics industry (2004) (0)
Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe (2013) (0)
Measurement and Characterization of Organic Contamination on Silicon Wafers and in Cleanrooms (1996) (0)
A modified capacitance/voltage technique to characterize copper drift diffusion in organic low-K dielectrics (1999) (0)
Enhancement of the Metal/Si-Doped AlGaAs Schottky Barrier Height by CH4/H2 Reactive Ion Etching (1993) (0)
XPS study of the role of Ti and TiN caps on the Cobalt/SiO2 interface (1998) (0)
N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal (2011) (0)
TOFSIMS evaluation of the removal of resists on silicon by ozone-based cleaning (2000) (0)
Mobility and Carrier Concentration Measurements on nm-Wide Semiconductor Fins (2018) (0)
ALD deposition of high-k and metal gate stacks for advanced CMOS applications (2004) (0)
Dopant profiling in NixSi1-x gates with SIMS (2005) (0)
On the locally resonant absorption of light in semiconducting tips during laser-assisted Atom Probe Tomography (2014) (0)
Carrier illumination for monitoring of CMOS ultra-shallow junctions (2002) (0)
On the activation mechanisms of sub-melt laser anneals (2008) (0)
Overview of 2D profiling in Imec (2003) (0)
On the correlation between SI+ yields and surface oxygen concentration: the ultimate experiment with in-situ SIMS-LEIS (2001) (0)
Physico-chemical Characterization of Thin Oxide Films: Difficulties and Solutions (2008) (0)
A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates (2002) (0)
Study of oxynitrides with dual beam TOF-SIMS (2000) (0)
FINFET doping: fabrication and metrology challenges (2009) (0)
Influence of oxygen on the analysis of oxynitrides: N-diffusion or ionization? (2000) (0)
Ge MOSFETs and high k gate dielectrics: a happy marriage thanks to thin epitaxial Si layers (2006) (0)
Fundamental study on the impact of C co-implantation on ultra shallow B juntions (2009) (0)
XPS Study of the Cleaning Efficiency by Ozone Processes of the Protective Films Formed by Reactive Ion Etching of Co and Ti Silicide (1998) (0)
Epitaxial growth of hexagonal theta-nickel silicide on (001) Si (2010) (0)
A novel TEM technique for junction delineation in integrated circuits (1990) (0)
Atomic layer deposition and remote plasma surface preparation for gate stack applications (2003) (0)
Characterization of ultra-thin SOI transistors down to the 20 nm gate length regime with scanning spreading resistance microscopy (SSRM) (2003) (0)
Quantitative TOFSIMS depth profiling of ultra thin silicon oxynitride films (2000) (0)
Si passivation for high-k gate dielectrics on GE MOSFETs: further developments and understanding (2009) (0)
A 3D electrical characterization of single stacking faults in InP by conductive-AFM (2015) (0)
Two-dimensional carrier profile characterization for junction engineering in advanced devices (2008) (0)
CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges (2003) (0)
S urface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition (0)
SIMS-profiling of Boron: fundamentals and practical applications (2002) (0)
Chemical contributions of low-energy ion beams towards ripple formation: A mixed beam experimental study (2008) (0)
Metrology for nano-electronics: challenges and solutions (2008) (0)
Non‐Destructive Characterization of Activated Ion‐Implanted Doping Profiles Based on Photomodulated Optical Reflectance (2011) (0)
Two-dimensional profiling using scanning spreading resistance microscopy (1999) (0)
Intercomparison of 2-D carrier profiles in MOSFET structures obtaind with scanning resistance microscopy and inverse modeling (1999) (0)
Comparison of standard macroscopic and Conductive AFM leakage measurements on gate removed high-k capacitors (2008) (0)
Characterization of (ultra)thin dielectrica (2000) (0)
Interfacial B-profiling: an (un)solvable problem with SIMS (2002) (0)
Atomic insight into relaxation mechanism of Ge(1-x)Sn(x) using atom probe tomography (2012) (0)
Protective films formed during the etching of TiSi2 and CoSi2 in F-based plasmas (1996) (0)
Substrates and Gate Dielectrics: the Materials Issue for sub-22 nm CMOS Scaling (2010) (0)
Chemical vapour deposition of Si:C and Si:CP thin films using disilane (2013) (0)
2D profiling with atomic force microscopy (1999) (0)
Specifics of cross-section analyses on semiconductor multi-layers (2010) (0)
Artifacts in SIMS depth profiling (1997) (0)
High resolution scanning spreading resistance microscopy (2002) (0)
High-k gate stack engineering : Towards meeting low standby power and high performance targets (2006) (0)
Atom Probe Tomography and Microscopy 2020 (2020) (0)
Apparatus and method for non-destructive measurement of the properties of a semiconductor substrate (2003) (0)
Atomic concentration profiling of nitrided HfSiO thin layers: a major challenge for physical analysis (2006) (0)
High resolution dopant/carrier profiling for deep submicron technologies (1999) (0)
Chemical and electrical dopant evolution during solid phase epitaxial regrowth (2003) (0)
Ar-cluster beam profiling of material modifications in ion implanted deep ultraviolet photoresist (2011) (0)
Impact of non-conductive diamond seed nanoparticles on the electrical performance of B-doped diamond films (2014) (0)
PIXE as a complementary technique to RBS in thin film characterization (2012) (0)
NEXAFS characterization of inorganic and organic materials for semiconductor application (2014) (0)
Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs (2013) (0)
Qualitative determination of the altered layer as a function of ion fluence: buildup, thickness and composition (1999) (0)
Si passivation in Ge pMOSFETS: further developments and understanding (2008) (0)
Effect of boron-doping on the tribological behavior of micro and nano crystalline diamond films (2014) (0)
TOF-SIMS and XPS Chartacterization of Plasma Etch Residues on Cobalt Silicide Surfaces (1997) (0)
On the influence of the fitting algorithm on depth profiles reconstructed from AR-XPS data (2010) (0)
Modeling of junction formation in scaled Si devices (2014) (0)
Transient phenomena of silicon under oxygen bombardment (1998) (0)
Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFET (2014) (0)
Two-dimensional carrier profiling using scanning probe microscopy (2002) (0)
Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study (2022) (0)
Quantification of high-K nanolayers for semiconductor applications using synchrotron radiation and calibrated instrumentation (2014) (0)
Transient sputter yields of silicon with and without oxygen flooding (1998) (0)
Sn x Optical Devices : Growth and Applications (2014) (0)
Fabrication and characterization of epitaxial Si-O superlattices (2014) (0)
Advanced Use of Therma‐Probe for Ultra‐Shallow Junction Monitoring (2011) (0)
Two-dimensional carrier mapping in nanowire-based heterojunction tunnel-field effect transistors using scanning spreading resistance microscopy (2012) (0)
A novel approach of using STM and NC-AFM to study narrow trenches in an oxide matrix (2014) (0)
Two-dimensional carrier profiling in advanced devices with pico-meter resolution (2004) (0)
ToF-SIMS and G-SIMS analyses of organic thin films for microelectronic applications (2011) (0)
Influence of boron-doping on the tribological properties of micro and nanocrystalline diamond thin films (2013) (0)
Nanoscale electrical characterization of HfO/sub 2//SiO/sub 2/ MOS gate stacks with enhanced-CAFM (2005) (0)
High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si (2002) (0)
Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6 (2016) (0)
Growth kinetics of germanium on (100) germanium by pyrolysis of germane (2005) (0)
In-situ characterization of the oxidation degree of the sputter surface and the oxygen enhancement of the ionization probability of Si (2000) (0)
Electrical scanning probe techniques in semiconductor research (1999) (0)
Towards optimization of HV-SSRM for Ge and III-V carrier mapping at the nanometer scale (2009) (0)
Seeing the invisible: metrology for extended crystalline defects in beyond silicon semiconductors (2016) (0)
3 D dopant analysis in nano scale devices ( FinFETs ) by Atom Probe Tomography (2013) (0)
Quantitative carrier profiling of silicon devices by nano-srp (1996) (0)
Damage in nickel silicides during FIB specimen preparation (2011) (0)
Verification of 2D SRP by the Analysis of Known Lateral Profiles (1995) (0)
Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology (2009) (0)
Contributions from electron tunneling and local bond breaking to the positive secondary ion yields (1994) (0)
Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques (2003) (0)
Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices (2018) (0)
Epitaxial growth on germanium: kinetics and layer quality (2005) (0)
Challenges for APT in advanced semiconductor technology research (2016) (0)
Analysis and optimisation of the 2D-dopant profile in a 90 nm CMOS technology using scanning spreading resistance microscopy (2003) (0)
ELECTRICAL CHARACTERIZATION OF SUBMICROMETER SILICON DEVICES BY CROSS-SECTIONAL CONTACT MODE ATOMIC FORCE MICROSCOPY. DISCUSSION (1996) (0)
Mesoscopic physical removal of material using sliding nano-diamond contacts (2018) (0)
Advanced RBS analysis of thin films in micro-electronics (2001) (0)
Ion beam analysis: the past, the present and the future (2002) (0)
Towards an understanding of ion beam mixing by quantitative internal profiling (1998) (0)
The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer (2004) (0)
Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe (2018) (0)
Scanning Probe Microscopy as a scalpel to probe filament formation in RRAM devices (2013) (0)
Characterization of the growth of atomic layer deposited WNxCy films on various substrates (2005) (0)
Co‐Implantation for 45 nm PMOS and NMOS Source‐Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length (2006) (0)
Growth of Wurtzite InAs nanowires on Si (111) substrates by selective area MOVPE (2015) (0)
Monolithic integration of Ge and III-V compound semiconductors on 300mm Si for CMOS (2014) (0)
Cellulose nanofibers for resistive switching: toward a paper-based electronics (2014) (0)
Author Correction: Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties (2021) (0)
EXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial GeSn films (2013) (0)
Depth Resolution and Ripple Formation on AlxGa 1-xAs (1995) (0)
(Invited) Alternative Metals for Beyond-Cu Interconnects (2020) (0)
Vapor phase doping: an atomic layer deposition approach to n-type doping in classical chemical vapor deposition epitaxy (2008) (0)
Epitaxial growth kinetics of Ge on (100)Ge from GeH4 using N2 as a carrier gas (2006) (0)
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures (2014) (0)
Positive secondary ion mass spectrometry under cesium ion bombardment (1985) (0)
Characterization of high-k films grown by atomic layer deposition (2002) (0)
New aspects of nanopotentiometry for MOSFET transistors (1999) (0)
Dopant/carrier profiling in non-planar or textured structures (2010) (0)
Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with RBS and SIMS (1999) (0)
Towards extending the capabilities of Scanning Spreading Resistance Microscopy for FinFET-based structures (2007) (0)
Meeting the doping challenges of device scaling (2007) (0)
Quantitative two-dimensional carrier mapping in silicon nanowire-based tunnel-field effect transistors with sub-3nm resolution (2010) (0)
Sputtering with large On+ cluster projectiles on inorganic surfaces (2015) (0)
Scanning probe microscopy of 1-D and 2-D carrier distributions (1998) (0)
Synthesizing a secondary ionization model for matrix elements sputtered from SiOx: findings and trends (2000) (0)
Model for the ripple formation on Si under oxygen bombardment (1994) (0)
Tomographic filament observation and scaling projection of RRAM in 3 x 3 nm dimensions (2016) (0)
3D-Atomprobe : facts, artifacts and applications in semiconductors (2010) (0)
Off-axis Raman spectroscopy for nanoscale stress metrology (2022) (0)
A scheme to correct for inaccuracies in the compositional analysis of SixGe1-x by Atom Probe Tomography (2021) (0)
Cu migration in conducting bridging meories as studied by C-AFM (2012) (0)
ARIBA, an all round ion beam acquisition program (1997) (0)
Scanning probe tomography toward the three-dimensional characterization of confined volumes (2015) (0)
Energy and angular dependent profiling of thin (0.5 - 2.5 nm) oxide layers (1999) (0)
Process modeling for doped regions formation on high efficiency crystalline silicon solar cells (2013) (0)
Study of Dopant Diffusion and Defect Evolution for Advanced Ultra Shallow Junctions based on Atomistic Modeling (2007) (0)
GeSn strain relaxation studies in view of SRB applications (2014) (0)
Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe: Analysis of dopants in SiGe-channel Quantum Well (2013) (0)
The analysis of ultra-thin films with HRBS-30 (2009) (0)
Meeting the doping challenges: the case for plasma doping (2008) (0)
HAXPES study of full high-k/metal gate stacks deposited on Ge substrates (2013) (0)
Active laser characterization by scanning capacitance microscopy (2002) (0)
Sub-nanometer resolution dopant profiling in Si and Ge-based nanoscale devices (2004) (0)
In situ observation of compound formation and ion beam mixing (1994) (0)
(Invited) Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation (2011) (0)
Interface passivation of III-V/high-k materials by High Energy X-ray Photoelectron Spectroscopy: A quantitative evaluation (2016) (0)
Ultimate Ge passivation: process and materials characterization of ultrathin Si cap layers grown on Ge substrates (2010) (0)
Conductive diamond tips made by HFCVD and MWCVD optimized for application in scanning spreading resistance microscopy (2006) (0)
GATE DIELECTRICS FOR CMOS TECHNOLOGIES : GROWTH AND CHARACTERIZATION WITH CAFM (2004) (0)
Impact of surface preparation on the electrical characteristics of scanning spreading resistance microscopy (2005) (0)
The limitations of SIMS in nanoscale technologies: quantitative near-surface and interfacial analysis of complex systems (2005) (0)
Quantification of B and As depth profiles with resonant post-ionisation mass spectrometry (1997) (0)
Development and evaluation of the Fast Fourier Transform-SSRM technique (2014) (0)
Experimental determination of inelastic mean free paths for calculation of TEM specimen thickness (2011) (0)
Nucleation of Al2O3 atomic layer deposition on MoS2, a two-dimensional semiconductor (2016) (0)
On the reduction of carrier spilling effects during resistance measurements with the spreading impedance probe (1994) (0)
Nanometer scale characterization of ULSI devices using scanning probes (2000) (0)
Micro probee carrier profiling of Ultra-shallow structures in advanced materials (2010) (0)
Near-surface B/As profiling with SIMS: (in)solvable problems? (2003) (0)
Combining TOF-SIMS with XPS to quantify organic surface coverages (2000) (0)
Doped nanodiamonds and their application for nanoelectronics sensing applications (2016) (0)
Influence of activation annealing and silicidation process on as redistribution and pile-up at the NixSiy/SiO2 interface (2005) (0)
Towards an understanding of the atomic-scale surface properties of Ge1-xSnx films (2011) (0)
Nanometer-scale roughness analysis of Si surfaces by TM-AFM for low-temperature epitaxy (1995) (0)
ULSI Device Characterization Using Nano-SRP (Invited) (1997) (0)
Molecular beam passivation of Ge compounds: surface, interface & gate stack studies (2011) (0)
Surface chemical investigation and topography study of hydrogen baked Si surfaces by infrared spectroscopy and Atomic Force Microscopy (1994) (0)
Thickness dependence and annealing behavior of Pt-group metal thin films as alternative metals for advanced interconnects (2016) (0)
Sputtering yield: Si and SiGe under O2-bombardment (2000) (0)
TOF- and G-SIMS characterization of organic solar cell materials (2010) (0)
3D electrical characterization of CNT-based interconnects (2011) (0)
Investigation of correlations between parameters defining the state of sputtered particles (1998) (0)
Direct measurement of cesium retention for sputtering with low energy Cs+ and oxygen background flooding (2009) (0)
UV/Ozone Pre-Treatment on Organic Contaminated Wafer for Complete Oxide Removal in HF Vapour Cleaning (1994) (0)
Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices (2010) (0)
Diamond nano-particle seeding on three-dimensional geometries for tip moulding application (2012) (0)
Optimization of SI-Wafer Cleaning and the use of Buffer-Layers for Epitaxial Growth of Sige-Layers by VLPCVD at T = 650 C (1992) (0)
Positive ion yields under variable oxidation levels (1997) (0)
In-Line Resistance Measurement of Single Nanometer-Wide Trenches and Fins (2016) (0)
Low-current conductive filament instability in conductive-bridging memories for non-volatile multilevel cells (2014) (0)
Metrology tools for two-dimensional (2D) dopant and carrier profiling (2006) (0)
(Invited) III-V Selective Area Growth and Epitaxial Functional Oxides on Si: From Electronic to Photonic Devices (2016) (0)
High resolution 2D Scanning Spreading Resistance Microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length (2003) (0)
Active dopant profiling of advanced semiconductor devices using scanning spreading resistance microscopy (2008) (0)
Dopant profiling in Ge (2003) (0)
HREM Characterization of Oxygen Ion Beam Sputtered Epitaxial CoSi2 (1994) (0)
Tuning the switching behavior of conductive-bridge memory by the modulation of Cu content in the cation-supplier alloys (2016) (0)
Thejunction challenges intheFinFETsdevice (2006) (0)
Methodology for resonance depth profiling with target tilting applied to the 3.045 MeV 16O(α, α)16O resonance (1993) (0)
Self focusing SIMS: a new metrology for the analysis of confined volumes (2017) (0)
Band gap of ALCVD mixed oxide AlZrO and HfAlO measured by XPS (2003) (0)
Two-dimensional carrier profiling with Scanning Capacitance Microscopy, industry-ready innovative research (2003) (0)
New SPM concept for accurate and repeatable tip positioning (2009) (0)
Advanced characterization of carrier profiles in germanium using micro-machined contact probes (2012) (0)
Scalpel SPM: a slice-and-view approach for tomography based on scanning probe microscopy (2016) (0)
Composition measurements of thin films beyond the spatial rResolution of SIMS (2013) (0)
Depth resolution and surface transients in crystalline Silicon at ultra low energies (2009) (0)
Physical characterization of ALD AI2O3 films deposited on GaAs substrates (2008) (0)
Analysis of nanoparticles with elastic recoil detection (2009) (0)
RBS Analysis of Artefacts Induced by Low Energy Ion Sputtering (1994) (0)
High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy (2004) (0)
Chemical analysis of nickel silicides with high spatial resolution by combined EDS and EELS (ELNES) (2008) (0)
Boron doped nanodiamonds for nanoelectronics applications (2016) (0)
One and two-dimensional carrier profiling in semiconductors by nano-SRP (1995) (0)
Elastic recoil detection of hydrogen in combination with low energy argon sputtering (1997) (0)
Extraordinary Inhibition of the Field-effect by Bound Quasiparticles at the Interface of a Dielectric and the Metal-Insulator Transition Material VO$_{2}$ (2015) (0)
Sub nanometer depth resolution profiling of the evolution and annealing of damage and the dopant redistribution of ultra-shallow As and Sb implants in Si (2003) (0)
Scanning spreading resistance microscopy and spectroscopy for routine and quantitative 2D-carrier profiling (2001) (0)
Defects reduction and characterization of epitaxial Si:C/Si:C:P layers grown using cyclic deposition and etching technique (2014) (0)
Ultra Clean Processing Technology for Highly Reliable Gate Oxides (1994) (0)
Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications (2002) (0)
C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy (2015) (0)
Protective films formed by RIE of Co and Ti silicides and ways of their removal (1996) (0)
HFCVD boron-doped diamond layers: influence of the initial growth stages and wire carburization (2013) (0)
Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling (2008) (0)
Sputtering Phenomena of CoSi2 and TiSi2 under Low Energy Oxygen Bombardment (1994) (0)
Accurate determination of Si sputter yield in the transient region (1999) (0)
Electrical evolution of undoped diamond seed particles during B-doped diamond growth and their impact on diamond film conductivity (2014) (0)
De-process and physical characterization of HfO2 based resistive memory as studied by C-AFM (2012) (0)
Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel (2012) (0)
(Non-hemispherical) apex shape formation and (non-uniform) apex temperature distribution during laser-assisted atomprobe tomography of semiconductors (2016) (0)
Correlation between optical and physical depth measurements: errors related to transparent layers (2001) (0)
Probing local electrical properties in semiconductors with nanometer resolution (2003) (0)
HfSiO(N) composition depth profiling: can we get a quantitative answer using SIMS? (2005) (0)
Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation (2021) (0)
Two-dimensional analysis of Al and B back surface field using scanning (2011) (0)
TOFSIMS and XPS characterization of stearic acid Langmuir-Blodgett films (1997) (0)
Evaporation Dynamics of Boron Dopants in Silicon (2021) (0)
200-mm CVD Grown Si/SiGe Resonant Interband Tunnel Diodes Optimized for High Peak-to-Valley Current Ratios (2012) (0)
ARIBA: a combined analysis set-up for high resolution RBS and TOF-ERDA for thin film analysis (2004) (0)
The analysis of a thin SiO2/SixN1-x/SiO2 stack, a comparative study of low energy ERD with XPS, low energy SIMS, HRBS, HR-ERD (2005) (0)
Two-dimensional profiling of doped layers bD spreading resistance measurements and atomic force microscopy on chemical etched surfaces (1993) (0)
Characterization of InP growth in nm-sized trenches by a combination of NC-AFM and STM (2014) (0)
Sims depth profiling with sub-nm resolution (?) (2011) (0)
Influence of the Ge concentration in a SiGe matrix on ionisation probability and sputter yield with O2+ beam (2003) (0)
High quality profiles for inorganic material using Arn+ clusters: a must for hybrid system profiling and how to achieve them (2015) (0)
Characterization and otimalization of 65nm CMOS technology using scanning spreading resistance microscopy (2005) (0)
Quasi 2D epitaxial Si-O superlattices: growth, device performance and defect analysis (2016) (0)
Modeling of bombardment induced oxidation of silicon with and without oxygen flooding (1998) (0)
Keynote) Metrology for Nanoscale Complex Semiconductor Systems (2016) (0)
Influence of Pre and Post Process Conditions on the Composition of Thin Si 3 N 4 Thin Films (3 nm) Studied by XPS and TOFSIMS (1999) (0)
Two-dimensional dopant profiling using scanning probe microscopy (2002) (0)
Recent Progress in Advanced In-line Metrology For High-Mobility Semiconductors (2015) (0)
Atom probe tomography for advanced semiconductor metrology (2012) (0)
Nanopotentiometry - Local potential measurements in CMOS transistors using atomic force spectroscopy (1997) (0)
Scaling of Hf-based gate dielectrics - Integration with polysilicon gates (2003) (0)
Limits and applications of SIMS in nanoscale technologies (2005) (0)
Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states (Extended abstracts book of the International Workshop for Surface Analysis and Standardization '09 (iSAS-09)) (2009) (0)
Characterization of boron-doped diamond films for application in nanoscale electrical measurements (2010) (0)
The importance of the determination of polysilicon dopant profile during process development (1995) (0)
Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition (2001) (0)
XPS study of ion induced oxidation of silicon with and without oxygen flooding (2000) (0)
Non stoichiometric atom emission from bulk InP under green and UV laser illumination (2016) (0)
Ge-migration in s-Si-SiGe structures during implantation and annealing (2005) (0)
On the sensitivity of carrier illumination to processing steps (2003) (0)
Three-Dimensional Dopant/Carrier Profiling (2013) (0)
Nitrogen profiling in high-k layers has much to gain from a combined TOFSIMS-Angle resolved XPS combined study (2005) (0)
Towards a model for the electrical contact and the sample surface for scanning spreading resistance microscopy (2003) (0)
High resolution study of high-k dielectrics with Conductive AFM (2008) (0)
Influence of chemical treatments on selective epitaxial growth of InP in STI nano-trenches on Si (001) substrates (2012) (0)
Influence of Vacuum Environment in Conductive AFM measurements on advanced MOS Gate dielectrics (2007) (0)
Hydrogen detection with TOF-ERDA on 2 MV accelerator (2006) (0)
Fast and stable sub-10µA pulse operation in W/SiO2/Ta/Cu 90nm 1T1R CBRAM (2015) (0)
Tribological properties of conductive boron doped nanocrystalline diamond films (2012) (0)
A Fundamental Multitechnique of SIMS-Depth Profiling (1994) (0)
Plasma doping control by mass metrology (2008) (0)
Bombardment induced charging and electrical properties of ion beam synthesised silicon oxides (1997) (0)
Calibrated boron doped tip fabrication (2011) (0)
Diamond electrical probes with sub-nanometer spatial resolution for advanced nanoelectronics device characterization (2016) (0)
Secondary ion signal variation during oxygen build-up in Si (1997) (0)
Electrical characterization of single nanometer-wide Si fins in dense arrays (2018) (0)
Reference-free, depth-dependent characterization of nanoscaled materials using a combined grazing incidence X-ray fluorescence and X-ray reflectometry approach (2015) (0)
Growth and characterization of atomic layer deposited WCxNy (2005) (0)
Strained Si and SRBs on Bulk Si (2013) (0)
Sputter yields and Ge migration in oxygen-bombarded SiGe (2002) (0)
Un)solvable problems in SIMS (2001) (0)
Progress towards quantitative high spatial resolution 1D and 2D carrier profiling using scanning probe techniques (2000) (0)
Towards a universal model for the formation of positive ions (2001) (0)
Electrical Characterization of Si Capped HfO2/Metal Gate Ge-pFETs: Physical Insight into Critical Parameters (2010) (0)
Advanced capabilities and applications of a sputter-RBS system (1999) (0)
The integration of EBIE into a SIMS tool: towards quantitative depth profiles with high resolution and a better understanding of the etch mechanisms (2008) (0)
Quantification and depth profiling of a ZrO2 (2nm)/A1203 (1nm) layer with NRA, RBS, HRBS, HERD (2001) (0)
High resolution electrical characterization of advanced CMOS devices (2004) (0)
Suppression of Sn agglomerations on GeSn surface (2014) (0)
Influence of the process sequence and thermal budget on the strain of Si:C stressor layers formed by ion implantation (2010) (0)
Operation of a Cameca IMS-4f at reduced extraction energies (1994) (0)
Micro Probe Carrier Profiling of Ultra-shallow Structures in Germanium (2009) (0)
Structural characterization of ALCVD ZrO2/Al2O3 nano-laminate deposits with high temperature grazing incidence XRD and TEM (2002) (0)
Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphine (2014) (0)
Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on $V_{\textrm {th}}$ Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach (2015) (0)
Modeling challenges in nanoelectronics: an atomistic point of view (2012) (0)
3D dopant analysis in nano scale devices (FinFETs) by Atom Probe Tomography (2013) (0)
Environment-friendly Disposable Nonvolatile Resistive Switching Memory Composed of Nanocellulose (2016) (0)
Altered layer formation in SiGe (1997) (0)
SIMS Depth Profiling of Shallow As Implants in Si and SiO2 (1984) (0)
Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions (2012) (0)
Organic solar cell composition profiling by large clusters ions: How can we optimize the information retrieved? (2012) (0)
Atomic insight of Ge(1-x)Sn(x) using atom probe tomography (2012) (0)
ULSI-device characterization using nano-SRP (1997) (0)
Thin epitaxial Si film growth at low temperatures for germanium processing applications (2005) (0)
Characterization of donor-acceptor-pair emission in fluorescent 6 H-SiC (0)
High resolution scanning spreading resistance microscopy of fully depleted silicon-on-insulator devices and double-gate transistors (2003) (0)
Three-dimensional electrical profiling of carbon nanotube interconnects (2012) (0)
Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution (1999) (0)
Analysis of thin high-k and silicide films by means of heavy ion forward TOF-RBS (2005) (0)
TOFSIMS as a monitor for thin film growth (2001) (0)
Probing the spatial dimensions of nanoscale patterns with Rutherford backscattering spectrometry (2023) (0)
(TOF-)SIMS profiling of HfO2/Si stacks: Is there a way to minimize the artefacts (2003) (0)
Quantitative 2D-carrier profiling in semiconductors with sub-nm spatial resolution using SSRM (2003) (0)
SPECTAC, a fully ethernet controlled Spectrum Acquisition Program for RBS, PIXE and NRA (1998) (0)
Wavelength sensitive photodetector with elongated nanostructures (2005) (0)
Quantification of group IV alloys in confined structures: the self focusing SIMS approach (2014) (0)
FIM observation of dopants in silicon (2009) (0)
Degradation of Clean Si-Surfaces Due to Storage in Clean (?) Wafer Boxes (1994) (0)

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