William E. Spicer

William E. Spicer's AcademicInfluence.com Rankings

William E. Spicer

Physics

#1840

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#2787

Historical Rank

#759

USA Rank

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Physics

William E. Spicer's Degrees

PhD Physics University of California, Berkeley
Bachelors Physics University of California, Berkeley

Why Is William E. Spicer Influential?

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According to Wikipedia, William Edward Spicer was an American engineering academic. Born in Baton Rouge, Louisiana on September 7, 1929, Spicer enrolled at the College of William and Mary, earning his first bachelor's degree in physics in 1949, followed by an equivalent degree at Massachusetts Institute of Technology in 1951. He then attended University of Missouri, completing master's and doctoral degrees in the same subject in 1953 and 1955, respectively. Spicer then worked for the Radio Corporation of America until 1962, when he joined the Stanford University faculty. Spicer received a Guggenheim fellowship in 1978, the same year he was appointed Stanford W. Ascherman Professor of Engineering. Spicer was granted emeritus status in 1992, and continued research work until his death of heart failure in London on June 6, 2004. Over the course of his career Spicer was elected a fellow of the American Physical Society and the IEEE, as well as member of the American Association for the Advancement of Science. He was a co-recipient of the APS Oliver E. Buckley Condensed Matter Prize in 1980, won the Medard W. Welch Award of the American Vacuum Society in 1984, followed by the Lifetime Mentor Award bestowed by AAAS in 2000.

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William E. Spicer's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

New and unified model for Schottky barrier and III–V insulator interface states formation (1979) (751)
Photoemission Studies of Copper and Silver: Theory (1964) (635)
Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States (1980) (583)
Unified defect model and beyond (1980) (521)
Anomalously large gap anisotropy in the a - b plane of Bi 2 Sr 2 CaCu 2 O 8 + δ (1993) (489)
Optical Properties of NiO and CoO (1970) (400)
Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony Compounds (1958) (400)
Electronic Structure of Amorphous Si from Photoemission and Optical Studies (1972) (387)
The probing depth in photoemission and auger-electron spectroscopy (1974) (325)
The advanced unified defect model for Schottky barrier formation (1988) (279)
The adsorption of CO, O2, and H2 on Pt: I. Thermal desorption spectroscopy studies☆ (1977) (270)
Photoemission Studies of Copper and Silver: Experiment (1964) (264)
An Auger analysis of the SiO2‐Si interface (1976) (222)
Modern theory and applications of photocathodes (1993) (202)
Effects influencing the structural integrity of semiconductors and their alloys (1985) (190)
Photoemission Studies of High-Tc Superconductors: The Superconducting Gap (1995) (168)
UPS studies of the bonding of H2, O2, CO, C2H4 and C2H2 on Fe and Cu☆ (1976) (156)
Near infrared to vacuum ultraviolet absorption spectra and the optical constants of phthalocyanine and porphyrin films (1970) (155)
Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom (1972) (155)
Negative affinity 3–5 photocathodes: Their physics and technology (1977) (153)
Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP (1978) (136)
Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces (1983) (135)
Studies of the Semiconducting Properties of the Compound CsAu (1959) (134)
Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation (1978) (132)
Optical Properties of Amorphous Germanium Films (1970) (131)
Electron-spectroscopic studies of the early stages of the oxidation of Si (1979) (129)
Photoemission studies of the silicon-gold interface (1979) (127)
Photoemission Studies of the Noble Metals. I. Copper (1969) (120)
Quantum Efficiency and Radiative Lifetime in p‐Type Gallium Arsenide (1965) (117)
Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP (1976) (112)
Photoemission studies of high-temperature superconductors (1989) (111)
Photoemission and Optical Studies of Cu-Ni Alloys. I. Cu-Rich Alloys (1970) (111)
Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces (1989) (104)
Surface state band on GaAs (110) face (1974) (100)
The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)☆ (1979) (97)
Study of Aluminum Films. I. Optical Studies of Reflectance Drops and Surface Oscillations on Controlled-Roughness Films (1971) (92)
On the Fermi level pinning behavior of metal/III–V semiconductor interfaces (1986) (91)
Photoemission studies of the noble metals. II - Gold (1970) (88)
The adsorption of CO, O2, and H2 on Pt: II. Ultraviolet photoelectron spectroscopy studies☆ (1977) (84)
Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen (1982) (80)
Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements (1977) (79)
Evidence for A Sharp Absorption Edge in Amorphous Ge (1969) (77)
Thermal desorption studies of CO and H2 from the CuNi alloy (1976) (77)
Photoemission from CsI - Experiment. (1973) (76)
Fundamental studies of III–V surfaces and the (III–V)-oxide interface (1979) (76)
Surface-Plasmon-One-Electron Decay and its Observation in Photoemission (1970) (76)
Oxidation of Nb as studied by the uv-photoemission technique (1974) (75)
Photoemission and Related Properties of the Alkali‐Antimonides (1960) (75)
3-5 compound photocathodes: A new family of photoemitters with greatly improved performance (1970) (74)
New phenomena in Schottky barrier formation on III–V compounds (1978) (73)
Electronic structure of the quenched superconductivity materials Y1−xPrxBa2Cu3O7−δ☆ (1989) (72)
QUANTUM YIELD OF GaAs SEMITRANSPARENT PHOTOCATHODE (1970) (69)
Electrical study of Schottky barrier heights on atomically clean and air‐exposed n‐InP(110) surfaces (1985) (69)
The oxidation of Cs—uv photoemission studies (1975) (67)
Study of sorption of oxygen on Al (1976) (67)
Experimental Evidence for the Validity of the Virtual Bound-State Model for Cu-Ni Alloys (1968) (67)
Photoemission studies of clean and oxidized Cs (1983) (67)
Photoemission Studies of the Layered Dichalcogenides NbSe 2 and MoS 2 and a Modification of the Current Band Models (1972) (66)
Changes in the Density of States of Germanium on Disordering as Observed by Photoemission (1968) (66)
Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profiling (1978) (66)
Measurement of Photoemitted Electron Energy Distributions by an ac Method (1964) (65)
Interaction of oxygen with silicon d‐metal interfaces: A photoemission investigation (1982) (65)
Oxygen species in Cs/O activated gallium nitride (GaN) negative electron affinity photocathodes (2003) (65)
Photoemission studies of wurtzite zinc oxide. (1972) (65)
Photoemission studies of the interaction of oxygen with GaAs(110) (1982) (64)
Optical Properties of Indium (1973) (61)
Sulfur passivation of GaAs surfaces: A model for reduced surface recombination without band flattening (1989) (61)
Photoemission and photomultipliers (1963) (61)
Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights (1987) (60)
Formation of surface states on the (111) surface of diamond (1981) (60)
Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110) (1979) (60)
Oxidation properties of GaAs(110) surfaces (1976) (59)
Study of Aluminum Films. II. Photoemission Studies of Surface-Plasmon Oscillations on Controlled-Roughness Films (1971) (59)
Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds (1982) (57)
Studies of the effect of oxidation time and temperature on the Si‐SiO2 interface using Auger sputter profiling (1979) (55)
The temperature dependence of the interaction of oxygen with Pd(111); A study by photoemission and auger spectroscopy (1983) (55)
Observation of phosphorus pile‐up at the SiO2‐Si interface (1978) (55)
Photoemission study of the adsorption of Cu on Pt(111) (1983) (55)
Role of oxygen in semiconductor negative electron affinity photocathodes (2002) (54)
Photoemission studies of the surface states and oxidation of group IV semiconductors (1977) (54)
Determination of the oxygen binding site on GaAs(110) using soft-x-ray-photoemission spectroscopy (1975) (54)
Column III and V elements on GaAs (110): Bonding and adatom‐adatom interaction (1980) (53)
Photoemission study of the effect of bulk doping and oxygen exposure on silicon surface states (1974) (53)
Valence band studies of clean and oxygen exposed GaAs(100) surfaces (1978) (53)
Do we need a new methodology for GaAs passivation (1993) (53)
Optimized cleaning method for producing device quality InP(100) surfaces (2005) (52)
A high density form of amorphous Ge (1970) (50)
Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surface (2004) (50)
Location of theZn 3dStates in ZnO (1971) (50)
Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compounds (1983) (47)
Photoemission spectra and thermal desorption characteristics of two states of oxygen on Pd (1980) (47)
Preparation of clean GaAs(100) studied by synchrotron radiation photoemission (2003) (46)
Phase separation in silicon oxides as seen by Auger electron spectroscopy (1975) (46)
“Pinning” and Fermi level movement at GaAs surfaces and interfaces (1990) (46)
Models of column III and V elements on GaAs (110): Application to MBE (1981) (46)
Photoemission and Optical Studies of Cu-Ni Alloys. II. Ni-Rich and Nearly Equiatomic Alloys (1970) (45)
Effect of low‐intensity laser radiation during oxidation of the GaAs(110) surface (1982) (45)
Photoemission study of WC(0001) (1984) (45)
Electronic structure of the diamond (111) 1×1 surface: Valence‐band structure, band bending, and band gap states (1980) (45)
Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation (1986) (45)
Photoemission studies of the initial stages of oxidation of GaSb and InP (1979) (45)
Simple method for cleaning gallium nitride (0001) (2002) (45)
Photoemission and Band Structure of the Semiconducting Compound CsAu (1962) (45)
Oscillations in the compositional depth profile of Cu/Ni alloys: A study by UPS (1978) (45)
Further evidence for equilibrium surface segregation in the CuNi alloys - CO s H2 chemisorption (1975) (45)
Photoemission Studies of the Alkali Metals. I. Sodium and Potassium (1969) (44)
Schottky barriers on atomically clean n‐InP (110) (1985) (44)
The advanced unified defect model and its applications (1988) (43)
Si–Pd and Si–Pt interfaces (1980) (43)
Photoemission studies of surface and interface states on III–V compounds (1976) (43)
Semiconductor surface physics research in the Space Shuttle orbit (1977) (43)
Experimental Evidence for Optical Population of the X Minima in GaAs (1967) (43)
Experimental Determination of the Density of States in Nickel (1966) (42)
BAND STRUCTURE OF CADMIUM SULFIDE--PHOTOEMISSION STUDIES (1965) (41)
Optical Properties of Platinum (1968) (41)
The Si(111)/Cu interface studied with surface sensitive techniques (1983) (40)
The production of pairs in semiconductors by low energy electrons (1961) (40)
TWO‐PHOTON PHOTOELECTRIC EFFECT IN Cs3Sb1 (1964) (39)
Photoemission Studies of Ferromagnetic and Paramagnetic Nickel (1970) (39)
Auger depth profiling of interfaces in MOS and MNOS structures (1976) (39)
Nature of the valence states in silicon transition metal interfaces (1981) (39)
Crater‐edge profiling in interface analysis employing ion‐beam etching and AES (1976) (39)
Photoemission investigation of surface states on strontium titanate (1976) (39)
Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds (1983) (37)
Photoemission Investigation of the Band Structure of PbTe (1965) (37)
Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission (2003) (37)
Si(111)-Pt interface at room temperature: A synchrotron radiation photoemission study (1982) (36)
Dislocation energies and hardness of semiconductors (1985) (36)
Optical Transitions in Which Crystal Momentum is Not Conserved (1963) (36)
Mean Free Path of Hot Electrons and Holes in Metals (1963) (36)
Photoemission and Optical Studies of the Electronic Structure of Palladium (1968) (35)
Synchrotron radiation as a new tool within photon‐beam technology (1975) (35)
Surface structure of Bi2Sr2CaCu2O8+δ high‐temperature superconductors studied using low‐energy electron diffraction (1988) (35)
CO chemisorption on Cu adlayers on Pt(111) (1983) (35)
Abrupt Ga1−xAlxAs‐GaAs quantum‐well heterostructures grown by metalorganic chemical vapor deposition (1979) (35)
Carbon 1s studies of diamond(111): Surface shifts, hydrogenation, and electron escape lengths (1984) (35)
Optimization and characterization of III–V surface cleaning (2003) (35)
Fermi level pinning during oxidation of atomically clean n‐InP(110) (1986) (35)
Systematics on the electron states of silicon d‐metal interfaces (1980) (34)
Radiation effects in optical materials (1965) (34)
Photoemission studies of the oxidation of Cs. Identification of the multiplet structures of oxygen species (1982) (34)
Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy, Hg 1-x Cd x Te (1982) (34)
Photoemission study of the surface electronic structure of Bi‐Ca‐Sr‐Cu‐O superconductors modified by Ne sputtering, Ag deposition, and heat treatment (1988) (34)
Location of the L 1 and X 3 Minima in GaAs as Determined by Photoemission Studies (1968) (33)
Unconventional Electronic Structure Evolution with Hole Doping in Bi 2 Sr 2 CaCu 2 O 8 1 d : Angle-Resolved Photoemission Results (1996) (33)
Photoemission and optical studies of amorphous germanium (1970) (33)
Kinetics study of initial stage band bending at metal GaAs(110) interfaces (1987) (32)
Photoemission studies of the GaAs-Cs interface (1975) (32)
From synchrotron radiation to I-V measurements of GaAs Schottky barrier formation (1990) (32)
Photoemission study of the interaction of Al with a GaAs (110) surface (1979) (31)
THE III-V PHOTOCATHODE: A MAJOR DETECTOR DEVELOPMENT (1972) (31)
New Fermi energy pinning behavior of Au on GaAs (110) suggesting increased Schottky‐barrier heights on n‐type GaAs (1981) (31)
Experimental results examining various models of Schottky barrier formation on GaAs (1985) (30)
Electron escape depth, surface composition, and charge transfer in tetrathiafulvalene tetracyanoquinodimethane (TTF-TCNQ) and related compounds: Photoemission studies (1975) (30)
Expiremental determination of the optical density of states for phthalocyanines and porphyrins (1968) (30)
Photoemission study of oxygen chemisorption on tin (1976) (30)
Temperature-dependent photoemission studies of the electronic states of CuBr (1976) (30)
Heterojunction band discontinuity at the Si–Ge(111) interface (1985) (29)
Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers (1985) (29)
Photoemission study of the formation of Schottky barriers (1975) (29)
Geometrical structure of the 1/2 ml (2x1) and 1/3 ml (2x3) Ba/Si(001) interfaces (2000) (28)
Systematics of interfacial chemical reactions on InP(110) (1984) (28)
Arsenic on GaAs: Fermi‐level pinning and thermal desorption studies (1989) (28)
Physics of high‐intensity nanosecond electron source: Charge limit phenomenon in GaAs photocathodes (1996) (28)
Differential Relaxation Effects and Multielectron Excitation for Molecularly Chemisorbed CO on Platinum (1977) (28)
Photoemission study of the oxidation of copper films (1974) (28)
Photoemission study of Au overlayers on Pd(111) and the formation of a Pd-Au(111) alloy surface (1983) (27)
Bonding of Al and Ga to GaAs(110) (1980) (27)
Gallium antimonide surface states and Schottky-barrier pinning (1975) (27)
Morphology of Au/GaAs interfaces (1986) (27)
Optically enhanced low temperature oxygen chemisorption on GaAs(110) (1985) (27)
Photoemissive Studies of the Band Structure of Silicon (1962) (27)
Deactivation in heavily arsenic-doped silicon (1998) (27)
Auger depth profiling of MNOS structures by ion sputtering (1977) (27)
An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) (1980) (27)
Evidence for a new type of metal-semiconductor interaction on GaSb (1978) (27)
Mechanism for annealing‐induced changes in the electrical characteristics of Al/GaAs and Al/InP Schottky contacts (1987) (27)
Photoemission Studies of Indium (1971) (26)
Exploiting energy‐dependent photoemission in Si d‐metal interfaces: The Si(111)–Pd case (1981) (26)
Annealing of intimate Au‐GaAs Schottky barriers: Thick and ultrathin metal films (1985) (25)
A comparison of LEED intensity data from chemically polished and cleaved GaAs(110) surfaces (1977) (25)
Oxygen adsorption on the GaAs(110) surface (1980) (25)
Photoemission Studies of Platinum (1971) (24)
Field Induced Photoemission and Hot‐Electron Emission from Germanium (1960) (24)
An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) III. Cu(100) + p(2 x 2)S (1983) (24)
Photoemission investigation of the temperature effect on Si–Au interfaces (1980) (24)
Chemical bonding, adatom-adatom interaction, and replacement reaction of column-3 metals on GaAs(110) (1983) (24)
Core-level photoemission of the Cs-O adlayer of NEA GaAs cathodes (1978) (23)
Electronic structure of different Pt-Cu surfaces (1983) (23)
Surface and interface states of GaSb: A photoemission study (1977) (23)
Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination (1981) (23)
Experimental Determination of the Optical Density of States in Iron (1967) (22)
UPS and TDS studies of the adsorption of CO and H2 on Cu/Ni (1980) (22)
Similarities in chemical intermixing at the Cu/InP and Cu/Si interfaces (1983) (22)
EFFECTS OF HEAT CLEANING ON THE PHOTOEMISSION PROPERTIES OF GaAs SURFACES (1969) (22)
Use of Photoemission, Auger, and Thermal-Desorption Techniques to Study the Mechanism of a Catalytic Reaction (1975) (22)
New phenomenon in the absorption of oxygen on silicon (1978) (22)
High resolution Auger sputter profiling study of the effect of phosphorus pileup on the Si–SiO2 interface morphology (1978) (22)
Soft x‐ray core level photoemission study of the Cs/InP interface formation (1988) (22)
Electronic Structure of Amorphous Ge (1970) (22)
Silver-halide valence and conduction states: Temperature-dependent ultraviolet-photoemission studies (1976) (22)
Electron transverse energy distribution in GaAs negative electron affinity cathodes: Calculations compared to experiments (1996) (22)
Photoemission studies of the effect of temperature on the Au–GaAs(110) interface (1983) (22)
UPS and LEED studies of GaAs (110) and (111) As surfaces (1978) (22)
Surface science lettersChemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages (1981) (21)
Comparison between the catalytic activities of Pd(111) and Pd-Au(111) for water synthesis (1983) (21)
Photoemission studies of the electronic structure of III–V semiconductor surfaces (1977) (21)
Photoemission Investigation of Amorphous Germanium (1971) (21)
Electronic structure of the gold/Bi2Sr2CaCu2O8 and gold/EuBa2Cu3O7−δ interfaces as studied by photoemission spectroscopy (1990) (21)
Possible non-one-electron effects in the fundamental optical excitation spectra of certain crystalline solids and their effect on photoemission. (1967) (21)
Morphological study of Ag, In, Sb, and Bi overlayers on GaAs(100) (1990) (20)
Evidence of stress‐mediated Hg migration in Hg1−xCdxTe (1983) (20)
Studies of Surface Electronic Structure and Surface Chemistry Using Synchrotron Radiation (1977) (20)
Photoemission studies of the Au–InP(110) interface (1983) (20)
Oxidation of Si(111), 7×7 and 2×1: A comparison (1981) (20)
SCHOTTKY BARRIER INSTABILITIES DUE TO CONTAMINATION (1988) (20)
A standlard for ultraviolet radiation. (1973) (20)
Abstract: Adsorption of oxygen on Cu(100)−A study by angularly resolved ultraviolet photoemission spectroscopy (ARUPS) (1978) (20)
Can photoemission measure valence‐band discontinuities? (1988) (19)
Reaching consensus and closure on key questions, a history of success, and failure of GaAs surfaces and interfaces at the Proceedings of the Physics and Chemistry of Semiconductor Interfaces (1993) (19)
Oxygen sorption and excitonic effects on GaAs surfaces (1977) (19)
Electronic structure of ceramics and thin‐film samples of high Tc Bi2Sr2CaCu2O8+δ superconductors: Effects of Ar+ sputtering, O2 exposure, and Rb deposition (1988) (19)
Semiconductor on glass photocathodes as high‐performance sources for parallel electron beam lithography (1996) (19)
(HgCd)Te–SiO2 interface structure (1983) (19)
Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface (1984) (19)
Photoemission from Si Induced by an Internal Electric Field (1960) (19)
Oxidation of ordered and disordered GaAs(110) (1979) (19)
Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure (1982) (19)
Ge-Ag interface at room temperature: An energy-dependent photoemission study (1982) (19)
Photoemission Observation of Surface-Plasmon Excitation in the Alkali Metals (1969) (19)
Reactions between H2 and O2 on Pt at low and high pressures: A comparison (1977) (19)
Metallic and atomic approximations at the Schottky barrier interfaces (1984) (18)
Interfacial properties of InP and phosphorus deposited at low temperature (1985) (18)
Growth and properties of graded band‐gap AlxGa1−xAs layers (1979) (18)
Electronic properties of metal-rich Au-Si compounds and interfaces (1982) (18)
Schottky barrier formation and intermixing of noble metals on GaAs(110) (1983) (18)
The case for sharp band edges in amorphous Ge and Si (1972) (18)
Photoemission studies of room-temperature oxidized Ga surfaces☆ (1982) (18)
Patterned negative electron affinity photocathodes for maskless electron beam lithography (1998) (18)
Ag-InP(110) interface: Photoemission studies of interfacial reactions and Schottky-barrier formation (1984) (18)
Lack of Photoemission Evidence for Tailing of Density of States into Energy Gap of Amorphous Si (1971) (17)
Direct Observation of Anion Formation in the Electronic Structure of Tetracyanoquinodimethane (TCNQ) Charge-Transfer Salts (1975) (17)
High Schottky barriers on and thermally induced processes at the Au– GaAs(110) interface (1982) (17)
Photoemission from VO2 (1968) (17)
Photoemission of adsorbed CO and H2O on Pt: Valence band studies (1981) (17)
Photoemission studies of layered transition metal dichalcogenides (1977) (17)
Location of the Zn 3d states in ZnO (1971) (17)
Physics of high-intensity nanosecond electron source (1993) (16)
Spectral analysis of photoemissive yields in GaAs and related crystals. (1968) (16)
Reversibility of Fermi level pinning (1988) (16)
Chemical reactions at the noble and near‐noble metal/InP interfaces: Comparison to Si and GaAs (1984) (16)
Photoelectron spectra of condensed gases on an inert substrate (1975) (16)
Room temperature stability of cleaved Hg1−xCdxTe (1982) (16)
Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface (1986) (16)
Noble metal interactions with the InP(110) surface (1984) (15)
A chemical and structural investigation of Schottky and ohmic Au/GaAs contacts (1987) (15)
Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis (1979) (15)
Chemical and electrical properties at the annealed Ti/GaAs(110) interface (1988) (15)
Comparative uptake kinetics of N2O and O2 chemisorption on GaAs(110) (1987) (15)
The interaction of thin Au and Al overlayers with the GaAs(110) surface (1980) (15)
Photoemission Studies of CdTe (1967) (15)
Auger depth profiling of Au–AlxGa1−xAs interfaces and LPE AlxGa1−xAs–GaAs heterojunctions (1977) (15)
Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988) (15)
Negative electron affinity photocathodes as high-performance electron sources. Part 1: achievement of ultrahigh brightness from an NEA photocathode (1995) (15)
Abrupt interfaces on InP(110): Cases of Sb and Sn (1989) (14)
AES sputter profiles of anodic oxide films on (Hg,Cd)Te (1982) (14)
Optical Density of States Ultraviolet Photoelectric Spectroscopy. (1970) (14)
Photoemission study of the band bending and chemistry of sodium sulfide on GaAs(100) (1989) (14)
Nature of Optical Transitions in Copper and Cu:Ni Alloys (1969) (14)
Bismuth‐Silver‐Oxygen‐Cesium Photocathode (1961) (14)
Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs(100) (1984) (14)
Surface analysis by means of photoemission and other photon‐stimulated processes (1976) (14)
Photoemission studies of W(100)-(5 × 1)C, 65 ⩽ hν ⩽ 200 eV and a comparison with WC(0001) (1985) (14)
Giant Temperature Dependence of Photoemission from the Silver Halides (1970) (14)
Lack of temperature dependence of Fermi level pinning at the Cu/InP(110) interface: A comparison with Cu/GaAs and other systems (1988) (14)
Surface and interface electronic structure of GaAs and other III-V compounds (1975) (14)
Determination of the natural valence‐band offset in the InxGa1−xAs system (1987) (14)
Luminescence from Sodium Chloride (1957) (14)
Synchrotron radiation studies of CO and H 2 O adsorbed on Pt (1981) (14)
Optical Properties of Rhodium (1973) (14)
Photoenhancement mechanism for oxygen chemisorption on GaAs(110) using visible light (1988) (14)
Electronic structure of amorphous and polycrystalline GeTe (1972) (14)
Intermixing at the early stage of the Si(111)/Ag interface growth (1982) (14)
A study of the chemical composition of MOS and MNOS structures by auger electron spectroscopy (1976) (13)
Negative electron affinity photocathodes as high-performance electron sources-Part 2: Energy spectrum measurements (1995) (13)
Interaction of Al overlayers with the InP(110) surface (1984) (13)
Large Schottky barrier heights on n‐InP−A novel approach (1991) (13)
Summary Abstract: The Si(111)/Mo interface as studied with synchrotron radiation photoemission and Auger electron spectroscopies (1982) (13)
Observation of strong bulk oxidation effects in amorphous germanium by ultraviolet reflectance spectroscopy (1974) (13)
Study of the hydrogenation of O adsorbed on Pt (1976) (13)
Semiconductor properties of polyphosphides (1984) (13)
Possible oxygen chemisorption configurations on the Si(lll) 2×1 surface (1981) (13)
Relationship of heat of chemisorption to π‐ and σ‐level shifts as measured by photoemission (1976) (13)
Density of States in Nickel (1965) (13)
Electron beam induced Hg desorption and the electronic structure of the Hg depleted surface of Hg1−xCdxTe (1986) (12)
Oxygen chemisorption on GaAs(110): Surface or subsurface growth? (1986) (12)
Pd2Si surfaces thermally enriched in silicon: Evidence of new Si:Pd bonds (1981) (12)
UPS Studies of H2, O2, and CO adsorption on ordered carbon overlayers on W(100) (1979) (12)
Cu, Ni, Ag, and Fe Densities of States (1966) (12)
The unified model for Schottky barrier formation and MOS interface states in 3–5 compounds☆ (1981) (12)
Chemical and electronic properties of the Pt/GaAs(110) interface (1987) (12)
Kinetic study of Schottky barrier formation of In on GaAs(110) surface (1986) (12)
Semiconductor on glass photocathodes for high throughput maskless electron beam lithography (1997) (12)
Optical Properties of Cobalt (1968) (11)
Evidence of palladium phosphide formation at the Pd/InP(110) interface (1983) (11)
Photoemission studies of clean and oxidized Nb and Nb3Sn (1982) (11)
Photoemission studies of the Cu-InP(110) interface (1983) (11)
Room temperature exchange reaction at the Al–InP(110) interface: Soft x‐ray photoemission studies (1983) (11)
Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe (110) (1990) (11)
Absence of band-gap surface states on clean amorphous silicon (1981) (11)
Surface core level shifts on InP(110) (1989) (11)
CdTe and ZnTe metal interface formation and Fermi-level pinning (1989) (11)
Extended x‐ray absorption fine structure and x‐ray standing wave study of the clean InP(110) surface relaxation (1992) (11)
Comparative study of activated oxygen uptake on HgTe, Hg0.69Cd0.31Te, and CdTe (1985) (11)
Metal cluster formation on GaAs(110): A temperature dependence study (1989) (11)
Interface studies of AlxGa1–xAs–GaAs heterojunctions (1979) (11)
Photoemission studies of surface states and Schottky-barrier formation on Inp (1976) (11)
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Electron-lattice interaction in ionic and partially ionic solids (1976) (10)
Chemical reaction and anion trapping at the Yb/GaAs(110) interface (1986) (10)
Ultraviolet-photoemission studies of TlCl (1976) (10)
Optical Densities of States of Nickel, Cobalt, and Palladium (1966) (10)
Surface studies of the tungsten dispenser cathode (1982) (10)
Cr on GaAs (110): The effect of electronegativity on the Schottky barrier height (1985) (10)
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Low‐temperature alkali metal/III–V interfaces: A study of metallization and Fermi level movement (1989) (10)
The Si/GaAs(110) heterojunction (1986) (10)
Surface extended x‐ray adsorption fine structure studies of the Si(001) 2×1–Sb interface (1991) (10)
Comparative studies of oxygen adsorption on GaAs(110) surfaces with ultrathin aluminum and cesium overlayers (1979) (10)
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Surface and bulk structural defects in Hg1−xCdxTe (1985) (10)
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CO chemisorption on PtCu surfaces. I: CO on (1×3) Pt0.98Cu0.02(110) (1983) (10)
Initial stages of oxide formation on HgCdTe exposed to activated oxygen (1983) (9)
Auger profiling studies of LPE n‐AlxGa1−xAs–n‐GaAs heterojunctions and the absence of rectification (1978) (9)
Photoemission and electron scattering in Cs3Bi and Cs3Sb (1973) (9)
Evidence for two pinning mechanisms with noble metals on InP(110) (1989) (9)
SURFACE AND INTERFACES OF HGCDTE. WHAT CAN WE LEARN FROM 3-5'S? WHAT IS UNIQUE WITH HGCDTE? (1982) (9)
Temperature control of morphology and barrier formation at the In/GaAs(110) interface (1989) (9)
Point-Charge-Cluster Calculation of Adsorbate Ionization Energies for (1973) (9)
The interaction of Pd with the InP(110) surface (1984) (9)
Photoemission investigation of amorphous Si and Ge (1972) (9)
Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989) (9)
Electron Emission from Metal‐BaO Systems (1967) (8)
Ultraviolet photoemission study of cesium oxide films on GaAs (1976) (8)
TEM investigation of the differences in ion milling induced damage of Hg1-xCdxTe and CdTe heterojunctions (1985) (8)
THE USE OF PHOTOEMISSION TO DETERMINE THE ELECTRONIC STRUCTURE OF SOLIDS (1973) (8)
Photoemission and Optical Studies of CusNi and AgsMn Alloys (1969) (8)
Surface science lettersSurface segregation and surface electronic interactions in PtCu (1982) (8)
Investigation of In contacts on atomically clean GaAs(110) surfaces (1990) (8)
Adatom location on the Si(111) 7×7 and Si(111) √3×√3–In surfaces by the x‐ray standing wave and photoemission techniques (1993) (8)
Comments on UPS studies of oxygen chemisorbed on group VIII transition metal surfaces (1978) (8)
Electronic structure of the La1 + xBa2 - xCu3O7 + δ system studied by photoelectron spectroscopy (1989) (8)
UV dielectric constants of a-Ge as a function of film density (1972) (8)
Photoemission as a Tool to Study Solids and Surfaces (1980) (8)
Ultraviolet photoemission spectroscopy of surfaces and surface sorption (1976) (7)
On the determination of the energy band offsets in Hg1−xCdxTe heterojunctions (1983) (7)
The Si/GaAs (110) heterojunction: Strain, disorder, and valence‐band discontinuity (1987) (7)
Photoemission Studies of the Electronic Structure of Cobalt (1968) (7)
Systematics of metal contacts to Hg1−xCdxTe (1987) (7)
Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes (1989) (7)
The Si/GaAs(110) heterojunction discontinuity: Amorphous versus crystalline overlayers (1987) (7)
The reactive Cr/InP and Mn/InP interfaces (1985) (7)
Interaction of overlayers of Al and Rb with single‐crystalline surfaces of Bi2Sr2CaCu2O8 (1990) (7)
Impurity electrons in amorphous germanium a photoemission argument for the Mott model (1971) (7)
Summary Abstract: Natural band lineups in II—VI compound semiconductors and their alloys: A study using core level photoemission measurement in the alloy (1988) (7)
Structure of Sb monolayers on Ge(111)2×1: A combined study using core‐level photoemission, x‐ray standing waves, and surface extended x‐ray absorption fine structure (1993) (7)
CO chemisorption on PtCu surfacesIII. CO on PtCu(111) (1983) (7)
An exploratory study of the reactive Ni-GaAs (1 1 0) interface (1984) (7)
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Dependence of structure of amorphous germanium films on the angle of evaporation (1972) (6)
The density of states of crystalline and amorphous Ge and Si (1971) (6)
Fermi-level pinning at the interfaces of Sb, Sn, and Ge on GaAs(110) surfaces (1989) (6)
Determination of the geometrical configuration of Bi on GaAs (110) by x‐ray standing wave triangulation (1993) (6)
Photoemission investigation of polycrystalline and amorphous tellurium (1974) (6)
A photoemission study of clean and oxidized Nb3Sn (1982) (6)
Thermal stability of Schottky barriers at Au and Ag/InP(110) interfaces with Sb interlayers (1991) (6)
Oxygen adsorption and the surface electronic structure of GaAs (110) (1978) (6)
Minimum Al0.5Ga0.5As‐GaAs heterojunction width determined by sputter‐Auger techniques (1979) (6)
Role of Hg bonding in metal/Hg1−xCdxTe interface formation (1986) (6)
Interfacial chemistry of metals on CdTe and ZnTe (110) (1990) (6)
Chemical reaction at the In on GaAs(110) interface (1986) (6)
Field-enhanced tunneling and barrier lowering in Al—n+GaAs—nGaAs Schottky contacts grown by MBE (1984) (6)
Photoemission spectroscopy of ordered overlayers on GaP (110) (1990) (6)
Synchrotron x‐ray standing‐wave study of Sb on GaAs(110) and InP(110) (1991) (6)
Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases (1987) (6)
Effects of annealing InP(110) surfaces on Schottky barrier heights at Pd/InP(110) interfaces (1992) (6)
Surface science lettersChemisorption-induced Pt 4f surface core level shifts (1982) (6)
Photoemission studies of As and its room-temperature oxidation (1982) (5)
Photoemission studies of the cesiation of ZnO (1977) (5)
Photoemission study of the reactive Pd/InP(110) interface (1986) (5)
Recent tests of negative electron affinity photocathodes as source for electron lithography and microscopy (2001) (5)
Stability of an atomically clean Hg1−xCdxTe surface in vacuum and under O2 exposure (1982) (5)
The development of photoemission spectroscopy and its application to the study of semiconductor interfaces Observations on the interplay between basic and applied research (Welch Memorial Lecture) (1985) (5)
Potentiodynamic Oxidation of HgCdTe Surface Formed by Fracture in Solution (1987) (5)
Reply to "Oxidation properties of GaAs (110) surfaces" by R. Ludeke (1977) (5)
Bonding of column 3 and 5 atoms on GaAs (110) (1981) (5)
Fermi‐level pinning and heavily doped overlayers (1988) (5)
Photoemission Study of the Electronic Structure of Wurtzite CdSe and CdS (1968) (5)
Al on GaAs(110) revisited: Kinetic considerations (1986) (5)
The Structure and Electrical Properties of Au Contacts to GaAs (1985) (5)
Search for a proximity effect induced gap in gold/high Tc junctions (1991) (5)
Reactive germanium/transition metal interfaces investigated with synchrotron radiation photoemission: Ge/Ni and Ge/Pd (1981) (5)
UPS study of the electronic structure of Hg1−xCdx Te: Breakdown of the virtual crystal approximation (1982) (5)
Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces: Effects on valence‐band discontinuity measurements (1988) (5)
One monolayer of Sb or Bi used as a buffer layer preventing oxidation of InP (1991) (5)
On the mechanism for water formation on Pt (1976) (5)
Structural study of monolayers of Sb on Ge(111) with different surface reconstructions (1994) (5)
Au and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating (1991) (5)
Photoemission and the Density of States in Indium (1967) (4)
Photoemission from some metals and semiconductors in the energy range 5–350 eV (1976) (4)
Photoemission study of Cd loss and its effect on the electronic structure of etched Hg1−xCdxTe surfaces (1987) (4)
Annealing Ag on GaAs: Interplay between cluster formation and Fermi level unpinning (1989) (4)
Direct transition and matrix element effects in the ultraviolet-photoemission-spectroscopy spectra of Cu-Ni (110) (1980) (4)
AUGER SPUTTER PROFILING STUDIES OF THE Si-SiO//2 INTERFACE. (1978) (4)
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Photoemission studies of the BiSrCaCuO valence band (1994) (4)
Semiconductor surface core level shifts by use of selected overlayers (1990) (4)
The Use of Synchrotron Radiation in UPS: Theory and Results (1978) (4)
Comparative study of Fermi energy pinning and adatom bond character: Antimony versus the column 3 elements (Al, Ga, In) on GaAs (110) and GaSb (110) (1985) (4)
SSRL beam line wunder: Design and planning (1983) (4)
LVV Spectra of Si, SiO2 and Si3N4 (1979) (4)
Intermetallic semiconductors containing alkali metals (1959) (4)
Escape probability for negative electron affinity photocathodes: calculations compared to experiments (1995) (4)
Unique band bending at the Sb/InP(110) interface (1989) (4)
Photoemission study of the electronic structure (Pr0.2La0.8)(Ba1.875La0.125)Cu3O7−gd (1989) (4)
Clustering Effects and the Rigid-Band Mode in Cu-Ni Alloys (1970) (4)
Photoelectrochemical effect of the anodic oxide of Hg1−xCdxTe (1984) (4)
Photoemission studies of a clean and oxidized niobium-aluminum alloy using synchrotron radiation (1983) (4)
Co chemisorption on PtCu surfaces II. (1 × 1)-CO/Pt0.98Cu0.02(110) (1983) (4)
The effect of surface oxygen on the intermixing and Schottky barrier at GaAs(110)–Au interfaces (1983) (4)
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An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100): I. The clean surface (1980) (4)
The use of photoemission to investigate the band structure of silicon and other semiconductors (1962) (3)
Chapter 10 Defects in Metal/III/V Heterostructures (1993) (3)
Geometrical structure of the Bi/GaP (110) interface: An x-ray standing wave triangulation study of a nonideal system (1994) (3)
Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces * (1983) (3)
Photoemission Studies Of The CU-GaAs(ll0) Interface Formation * (1983) (3)
Barrier heights from ohmic to bandgap: Modified Al:GaAs Schottky diodes by MBE (1983) (3)
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Changes in O2 and CO surface chemistry with increasing carbon concentration on W(100) (1985) (3)
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Unusual low-temperature behavior of Fermi level movement at the Sb/GaAs interface (1988) (3)
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Chemisorption-induced Pt 4f surface core level shifts (1982) (3)
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Angle resolved photoemission study of the alloy scattering effect in Hg1−xCdxTe (1987) (3)
Electrical Study of Schottky Barriers on Cleaved InP and GaAs (110) Surfaces (1985) (3)
Photoemission and band structure (1968) (3)
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The gold/high temperature superconductor interface; metallicity of the near surface region and a search for the proximity effect (1991) (3)
Spectral weight changes at the superconducting transition of Bi2Sr2CaCu2O8+δ (1991) (3)
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An Investigation Of The Cause Of Initial Band Bending Of A Cleaved Clean n-GaAs(llO) Surface (1985) (3)
Valence‐band discontinuity at the Ge/InP(110) interface (1987) (3)
Temperature effects on morphology, reaction, and Fermi level movement at Ga/InP(110) interface (1989) (3)
Photoemissive investigation of the band structure of CdS (1964) (3)
Fermi‐level movement at metal/HgCdTe contacts formed at low temperature (1989) (3)
In overlayers on Sb passivated GaAs (1992) (2)
The interaction of hydrogen and carbon monoxide on Cu-Ni (110) single-crystal surfaces (1980) (2)
Angle‐resolved photoemission studies of oxide formation on Cu(100) (1982) (2)
Photoelectron spectroscopy in the energy region 30 to 800 eV using synchrotron radiation (1979) (2)
Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces (1989) (2)
Abstract: Auger–sputter profiling study of phosphorus pileup at the Si–SiO2 interface (1978) (2)
Photoemission study of the electronic structure of ZnTe. (1968) (2)
Chemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages (1981) (2)
High Energy Resolution Arpes Measurements of the Normal and Superconducting States of Bi2Sr2CaCu2O8+δ (1993) (2)
Photoemission studies of the room‐temperature Si/Hg1−xCdxTe, Si/HgTe, and Si/CdTe interfaces (1987) (2)
Summary Abstract: Unusual interfacial kinetics and Schottky barrier formation of thallium on the GaAs(110) surface (1984) (2)
The nature of the 7×7 reconstruction of Si(111): As revealed by changes in oxygen sorption from 2 × 1 to 7×7☆ (1981) (2)
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The problem of exciton induced photoemission from CdS (1961) (2)
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InP Transferred Electron Cathodes: Basic to Manufacturing Methods (2007) (2)
Unusual behavior of Hgl−xCdxTe and its explanation☆ (1983) (2)
Development of Photoemission as a Tool for Surface Science: 1900–1980 (1982) (2)
X-Ray Standing Wave Analysis of Overlayer-Induced Substrate Relaxation: the Clean And Bi-Covered (110) GaP Surface (2007) (2)
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Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study (1988) (2)
Use of temperature to study the nature of interface states and Fermi level pinning with metals on GaAs(110) (1989) (2)
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Abstract: Oxygen on Pd(111): A study by photoemission and thermal desorption (1979) (2)
Comparison of Low Intensity Laser Enhancement of Oxygen Chemisorption on GaAs Using O 2 and N 2 O (1986) (2)
Limits on the use of tunneling to describe the Pd–Ge ohmic contact to GaAs (1992) (2)
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Fundamental Studies of Interfaces: The Unified Defect Model and Its Application to GaAs Integrated Circuits (1985) (2)
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Photoemission Study of the Electronic Structure of Copper Oxide Superconductors (1987) (1)
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Experimental determination of the bonding of column 3 and 5 elements on GaAs (1982) (1)
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Surface Composition of Copper-Nickel Alloys (1980) (1)
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Schottky barrier formation on InP(110) passivated with one monolayer of Sb (1992) (1)
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The Diamond (111) Surface: A Dilemma Resolved | NIST (1983) (1)
Novel Polyphosphide Semiconductors with Good Interfacial Properties to INP (1985) (1)
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IVa-6 studies of Si/SiO2interfaces by Auger sputter profiling and photoelectron spectroscopy using synchrotron radiation (1977) (1)
(HgCd)Te-SiO 2 interface structure (1983) (1)
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Phase separation in the Ge:As system studied by X-ray photoemission (1973) (1)
Absence of core-exciton-induced resonant photoemission from InP(110) (1984) (1)
Polarized-light photoemission studies of wurtzite CdS (1974) (1)
Photoemission study of the annealed Pd/GaAs(110) interface (1991) (1)
Relationship between Signal‐to‐Noise Ratio and Threshold of Response of Infrared Photoconductors Limited by Generation‐Recombination Noise (1959) (1)
Nature of Optical Transitions in Copper and Cu: Ni Alloys (1969) (1)
Spectral weight changes at the superconducting transition of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8+. delta (1991) (1)
Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation (1983) (1)
Photoemission Study Of The Surface Chemistry And The Electronic Structure Of Copper Oxide Superconducting Thin Films (1988) (1)
X-RAY-INDUCED LUMINESCENCE FROM AIR (1955) (1)
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Surface States and the Oxidation of Amorphous Ge and Si (1974) (0)
Surface, interface, and bulk properties of high-T sub c superconductors. Final report, 30 September 1987-29 April 1989 (1989) (0)
Erratum: Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination [J. Vac. Sci. Technol. 18, 533 (1981)] (1982) (0)
Photoemission from alkali and silver halides Quaterly status report, period ending 30 Apr. 1970 (1970) (0)
Semiconductor Electrodes, 62. Photoluminescence and Electroluminescence from Manganese-Doped ZnS and CVD ZnS Electrodes (1989) (0)
Surface physics. (1978) (0)
Use of Photoemission with Synchrotron Radiation to Probe Surfaces on an Atomic Scale (1981) (0)
DENSITY OF STATES AND PHOTOEMISSION FROM INDIUM AND ALUMINUM. (1971) (0)
Founding of the SSRL (1983) (0)
Auger depth profiling of Au-Al/x/Ga/1-x/As interfaces and LPE Al/x/Ga/1-x/As-GaAs heterojunctions. [Liquid Phase Epitaxy] (1977) (0)
Comparative uptake kinetics of N 2 O and O 2 chemisorption on GaAs(110) (1987) (0)
Clustering of Metals on Semiconductors Surfaces: Relation to Metallicity, Surface Diffusion, Growth Modes and Schottky Barriers (1992) (0)
Magnetic catalyst. [Hydrocarbon synthesis catalyst of oxide of Fe, Co, or Ni] (1952) (0)
Cs2Te standard cell development and electronic characteristics of silver halides Quarterly status report, period ending 31 Oct. 1970 (1970) (0)
HgCdTe Surface Study Program (1982) (0)
Investigation of Schottky barrier on GaAs and InP using a multi-disciplined approach (1990) (0)
Tin Oxide and Related Oxides with Regard to Cold Cathodes. (1976) (0)
Title ELECTRONIC-STRUCTURE OF THE GOLD BI 2 SR 2 CACU 2 O 8 AND GOLD EUBA 2 CU 3 O 7-DELTA INTERFACES AS STUDIED BY PHOTOEMISSION SPECTROSCOPY (2001) (0)
Surface segregation and surface electronic interactions in PtCu (1982) (0)
Studies of the Surface Electronic Structure and Chemistry of Si, Ge, and Other Solids (1978) (0)

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