William J. Schaff
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Engineering Physics
William J. Schaff's Degrees
- PhD Electrical and Computer Engineering University of California, Santa Barbara
- Masters Electrical and Computer Engineering University of California, Santa Barbara
- Bachelors Electrical and Computer Engineering University of California, Santa Barbara
Why Is William J. Schaff Influential?
(Suggest an Edit or Addition)William J. Schaff's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures (1999) (2327)
- Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures (2000) (1391)
- Unusual properties of the fundamental band gap of InN (2002) (1319)
- Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system (2003) (577)
- Small band gap bowing in In1−xGaxN alloys (2002) (570)
- Intrinsic electron accumulation at clean InN surfaces. (2004) (444)
- Temperature dependence of the fundamental band gap of InN (2003) (365)
- Undoped AlGaN/GaN HEMTs for microwave power amplification (2001) (356)
- Effects of the narrow band gap on the properties of InN (2002) (345)
- Microwave performance of a 0.25 m gate AlGaN/GaN heterostructure field effect transistor (1994) (332)
- Surface charge accumulation of InN films grown by molecular-beam epitaxy (2003) (280)
- pH response of GaN surfaces and its application for pH-sensitive field-effect transistors (2003) (272)
- Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy (2001) (257)
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C (1995) (246)
- Effects of electron concentration on the optical absorption edge of InN (2004) (213)
- Evidence for p-type doping of InN. (2005) (199)
- Improvement on epitaxial grown of InN by migration enhanced epitaxy (2000) (192)
- Origin of electron accumulation at wurtzite InN surfaces (2004) (192)
- Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers (1988) (191)
- Fermi-level stabilization energy in group III nitrides (2005) (188)
- Optical properties and electronic structure of InN and In-rich group III-nitride alloys (2004) (164)
- Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels (2004) (164)
- Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire (2000) (152)
- The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN (2004) (144)
- GaN/AlN-based quantum-well infrared photodetector for 1.55 μm (2003) (143)
- Origin of the n-type conductivity of InN: the role of positively charged dislocations (2006) (133)
- Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices (1999) (131)
- Acceptor states in the photoluminescence spectra of n-InN (2005) (131)
- Donor and acceptor concentrations in degenerate InN (2002) (131)
- Growth, fabrication, and characterization of InGaN solar cells (2008) (122)
- Surface chemical modification of InN for sensor applications (2004) (114)
- CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz (1996) (112)
- Universal bandgap bowing in group III nitride alloys (2003) (112)
- Terahertz emission by InN (2004) (112)
- Ultra-low resistive ohmic contacts on n-GaN using Si implantation (1997) (108)
- Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency (1996) (108)
- On the crystalline structure, stoichiometry and band gap of InN thin films (2004) (105)
- Time-resolved spectroscopy of recombination and relaxation dynamics in InN (2003) (101)
- Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures (2003) (98)
- Negative capacitance of GaAs homojunction far-infrared detectors (1999) (96)
- Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces (2007) (95)
- Hot-phonon-induced velocity saturation in GaN (2004) (92)
- Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors (2008) (91)
- Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor (2002) (90)
- The analysis of exponential and nonexponential transients in deep‐level transient spectroscopy (1981) (89)
- Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy (2007) (89)
- Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy (2003) (88)
- Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements (2004) (87)
- Transition from electron accumulation to depletion at InGaN surfaces (2006) (81)
- Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer (2003) (79)
- Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence (2003) (78)
- Phonon lifetimes and phonon decay in InN (2005) (77)
- Growth of cubic InN on r-plane sapphire (2003) (77)
- Tunneling escape time of electrons from a quantum well under the influence of an electric field (1989) (76)
- GaN based heterostructure for high power devices (1997) (73)
- X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN (2003) (73)
- Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes (2013) (73)
- Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy (2005) (72)
- 0.12-μm gate III-V nitride HFET's with high contact resistances (1997) (70)
- Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT (2009) (68)
- Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy (1987) (67)
- Band gap bowing parameter of In1−xAlxN (2008) (67)
- Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate (2001) (67)
- Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys (2003) (65)
- In adlayers on c-plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy (2007) (64)
- 75 Å GaN channel modulation doped field effect transistors (1996) (63)
- Effects of surface states on electrical characteristics of InN andIn1−xGaxN (2007) (62)
- Optimization of high-speed metal-semiconductor-metal photodetectors (1994) (62)
- A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates (1988) (61)
- Hole transport and photoluminescence in Mg-doped InN (2010) (61)
- Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions (2004) (61)
- Detailed analysis of the dielectric function for wurtzite InN and In‐rich InAlN alloys (2006) (61)
- Anisotropy of the dielectric function for wurtzite InN (2004) (59)
- Indium Nitride and Related Alloys (2009) (59)
- Bias effects in high performance GaAs homojunction far-infrared detectors (1997) (58)
- n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy (2004) (57)
- Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures. (2005) (57)
- Ultrabright and ultrafast III-V semiconductor photocathodes. (2014) (56)
- Mg‐doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements (2008) (55)
- Variation of band bending at the surface of Mg-doped InGaN: Evidence of p -type conductivity across the composition range (2007) (55)
- Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN (2011) (55)
- Dielectric function and Van Hove singularities for In-rich In x Ga 1 − x N alloys: Comparison of N- and metal-face materials (2007) (55)
- Ultrafast carrier dynamics in InN epilayers (2004) (55)
- Compositional modulation and optical emission in AlGaN epitaxial films (2006) (54)
- GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm (2000) (54)
- Room‐temperature exciton electroabsorption in partially intermixed GaAs/AlGaAs quantum well waveguides (1989) (54)
- Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors (2000) (52)
- Valence-band structure of InN from x-ray photoemission spectroscopy (2005) (51)
- Suppression of thermal conductivity in InxGa1−xN alloys by nanometer-scale disorder (2013) (51)
- Hot electron cooling rates via the emission of LO-phonons in InN (2004) (51)
- GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm (1998) (50)
- A 1 ( LO ) phonon structure in degenerate InN semiconductor films (2005) (49)
- Transient carrier and field dynamics in quantum-well parallel transport: From the ballistic to the quasi-equilibrium regime (1992) (49)
- Direct Determination of Local Lattice Polarity in Crystals (2006) (49)
- High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy (1999) (49)
- 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz (1988) (48)
- Clean wurtzite InN surfaces prepared with atomic hydrogen (2005) (48)
- Deep level defects and doping in high Al mole fraction AlGaN (2003) (47)
- Rapid thermal annealing of low-temperature GaAs layers (1995) (46)
- Theoretical model for polarization superlattices: Energy levels and intersubband transitions (2003) (46)
- Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures (1997) (45)
- Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation (1991) (44)
- Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor (1988) (44)
- Intersubband photoconductivity at 1.6μm using a strain-compensated AlN∕GaN superlattice (2005) (43)
- Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy (2004) (42)
- InN dielectric function from the midinfrared to the ultraviolet range (2004) (41)
- Surface band bending at nominally undoped and Mg‐doped InN by Auger Electron Spectroscopy (2006) (41)
- Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy (2002) (41)
- Indium nitride: Evidence of electron accumulation (2004) (41)
- GaAs multilayer p+-i homojunction far-infrared detectors (1997) (41)
- Ultrafast recombination in Si-doped InN (2006) (40)
- Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures (2010) (40)
- Effects of point defects on thermal and thermoelectric properties of InN (2011) (40)
- Free electron behavior in InN: On the role of dislocations and surface electron accumulation (2009) (39)
- Demonstration of nearly non-degenerate electron conduction in InN grown by molecular beam epitaxy (2005) (39)
- Deformation potentials of the E1(TO) and E2 modes of InN (2004) (38)
- Anisotropy of the Γ-point effective mass and mobility in hexagonal InN (2006) (37)
- Temperature invariance ofInNelectron accumulation (2004) (37)
- Hole transport and carrier lifetime in InN epilayers (2005) (37)
- Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy (1989) (36)
- Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction (2008) (36)
- Temperature dependence of mobility and carrier density in InN films (2006) (36)
- A Raman spectroscopy study of InN (2004) (36)
- Cross-sectional Raman spectra of InN epifilms (2005) (36)
- Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases (1988) (36)
- Temperature dependence of carrier lifetimes in InN (2005) (36)
- Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular‐beam epitaxial growth of InGaAs single quantum wells on GaAs (1989) (36)
- Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN (2006) (36)
- Narrow bandgap group III‐nitride alloys (2003) (35)
- Multiquantum well strained-layer lasers with improved low frequency response and very low damping (1992) (35)
- High‐speed modulation of strained‐layer InGaAs‐GaAs‐AlGaAs ridge waveguide multiple quantum well lasers (1991) (35)
- Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures (1999) (35)
- Surface cleaning and annealing effects on Ni∕AlGaN interface atomic composition and Schottky barrier height (2004) (35)
- Recessed gate GaN MODFETs (1997) (35)
- MAGNETIC-FIELD-INDUCED UNBINDING OF THE OFF-WELL-CENTER D- SINGLET STATE IN GAAS/AL0.3GA0.7AS MULTIPLE QUANTUM WELLS (1997) (34)
- Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations (2008) (34)
- Inversion and accumulation layers at InN surfaces (2006) (34)
- Optical Hall Effect in Hexagonal InN (2008) (34)
- Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications (2001) (34)
- Photodetectors based on intersubband transitions using III-nitride superlattice structures (2009) (34)
- Polarized photoluminescence and absorption in A-plane InN films (2006) (34)
- Growth of Thick InN by Molecular Beam Epitaxy (2002) (34)
- Reduced surface electron accumulation at InN films by ozone induced oxidation (2007) (34)
- Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material (2010) (33)
- Superlattice buffers for GaAs power MESFET’s grown by MBE (1984) (33)
- Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors (2004) (33)
- High-frequency, high-efficiency MSM photodetectors (1995) (33)
- Tunneling effects and intersubband absorption in AlN/GaN superlattices (2005) (33)
- Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement (2001) (32)
- Electrical characterization and alloy scattering measurements of LPE GaxIn1-xAs/InP for high frequency device applications (1981) (32)
- Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors (2002) (32)
- Room-temperature photoluminescence and resonance-enhanced Raman scattering in highly degenerate InN films (2005) (31)
- Terahertz emission from silicon and magnesium doped indium nitride (2008) (31)
- dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors (1989) (31)
- V-shaped inversion domains in InN grown on c-plane sapphire (2004) (31)
- Correlation between strain, optical and electrical properties of InN grown by MBE (2003) (31)
- Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy (1988) (30)
- Temperature-dependent optical properties of wurtzite InN (2004) (30)
- Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN (2004) (29)
- Growth and characterization of rugged sodium potassium antimonide photocathodes for high brilliance photoinjector (2013) (29)
- Investigations of MBE grown InN and the influence of sputtering on the surface composition (2004) (29)
- Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy (2003) (28)
- The influence of conduction band plasmons on core-level photoemission spectra of InN (2008) (28)
- High Electron Mobility InN (2007) (28)
- Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect (2008) (28)
- Electrical properties of InGaN‐Si heterojunctions (2009) (27)
- Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers (1991) (27)
- Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior (2009) (27)
- Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure (2007) (26)
- Room-temperature ultraviolet emission from GaN/AlN multiple-quantum-well heterostructures (2003) (26)
- Low density of threading dislocations in AlN grown on sapphire (2007) (26)
- Native-defect-controlled n-type conductivity in InN (2006) (25)
- Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy (2002) (25)
- p‐type InN and In‐rich InGaN (2007) (25)
- Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures (2011) (25)
- Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures (1997) (24)
- An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances (1997) (24)
- Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors (2000) (23)
- Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures (2001) (23)
- Optical bleaching effect in InN epitaxial layers (2006) (23)
- Evidence for phonon-plasmon interaction in InN by Raman spectroscopy (2007) (23)
- Effects of substrate misorientation and background impurities on electron transport in molecular‐beam‐epitaxial‐grown GaAs/AlGaAs modulation‐doped quantum‐well structures (1987) (23)
- GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors (2000) (23)
- Heterojunction bipolar transistor using pseudomorphic GaInAs for the base (1986) (23)
- GaN and InN conduction-band states studied by ellipsometry (2008) (22)
- Electrical characterization of grain boundaries in GaAs (1983) (22)
- OMVPE growth of GaxIn1−xP/GaAs(AlyGa1−yAs) heterostructures for optical and electronic device applications (1986) (22)
- Selective excitation of E 1 (LO) and A 1 (LO) phonons with large wave vectors in the Raman spectra of hexagonal InN (2009) (22)
- Compositional modulation in InxGa1-xN: TEM and x-ray studies (2005) (22)
- Surface electronic properties of n‐ and p‐type InGaN alloys (2008) (22)
- Internal transitions of negatively charged magnetoexcitons and many body effects in a two-dimensional electron gas. (2001) (22)
- Surface conductivity of epitaxial InN (2005) (21)
- High Frequency AlGaN/GaN MODFET's (1997) (21)
- Effect of emitter layer concentration on the performance of GaAs p/sup +/-i homojunction far-infrared detectors: a comparison of theory and experiment (1998) (21)
- Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT (2009) (21)
- Multiphonon Resonance Raman Scattering in InGaN (2005) (21)
- Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry (2009) (21)
- Compensating point defects in 4He+ -irradiated InN (2007) (20)
- High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation (1983) (20)
- Effect of passivation on AlGaN/GaN HEMT device performance (2000) (20)
- Pre-metallization processing effects on Schottky contacts to AlGaN∕GaN heterostructures (2005) (20)
- Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1−xN epilayers (2005) (20)
- Depletion of surface accumulation charge in InN by anodic oxidation (2009) (19)
- Electron accumulation at InN/AlN and InN/GaN interfaces (2005) (19)
- Direct measurements of the lifetimes of longitudinal optical phonon modes and their dynamics in InN (2007) (18)
- Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors (2005) (18)
- Capped versus capless heat treatment of molecular beam epitaxial GaAs (1982) (18)
- High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching (1991) (18)
- Defect redistribution in postirradiation rapid-thermal-annealed InN (2010) (18)
- Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties (2004) (18)
- Phonon polariton of InN observed by infrared synchrotron radiation (2008) (17)
- Vacancy defects in epitaxial InN: identification and electrical properties (2004) (17)
- Surface electronic properties of undoped InAlN alloys (2008) (17)
- Coherent longitudinal optical phonon and plasmon coupling in the near-surface region of InN (2004) (17)
- Anisotropic transport in modulation‐doped quantum‐well structures (1987) (16)
- Theory of the GaN crystal diode: Negative mass negative differential resistance (2005) (16)
- Optical and RF characteristics of short-cavity-length multiquantum-well strained-layer lasers (1991) (16)
- Momentum relaxation of electrons in n-type bulk GaN (2003) (16)
- Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces (2006) (16)
- Comments on "A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer" (1987) (15)
- Lateral polarity heterostructures by overgrowth of patterned Al x Ga 1-x N nucleation layers (2000) (15)
- Photoluminescence of Energetic Particle-Irradiated InxGa1-xN Alloys (2005) (15)
- Sputter depth profiling of InN layers (2004) (15)
- Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs (1992) (15)
- Effect of Native Defects on Optical Properties of InxGa1-xN Alloys (2005) (15)
- Effect of growth temperature on Eu incorporation in GaN powders (2008) (15)
- Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode (1984) (15)
- Ultrafast hole-burning in intersubband absorption lines of GaN/AlN superlattices (2006) (14)
- New coherent detector for terahertz radiation based on excitonic electroabsorption (1992) (14)
- Resonant localized donor state above the conduction band minimum in InN (2005) (14)
- Role of impurities and dislocations for the unintentional n-type conductivity in InN (2009) (14)
- Dopants and Defects in InN and InGaN Alloys (2005) (14)
- Resonant Raman spectroscopy on InN (2005) (14)
- Measurement of nonuniform distribution of strain in InGaAs/GaAs quantum wires (1994) (14)
- Surface-plasmon resonances in indium nitride with metal-enriched nano-particles (2006) (13)
- Dielectric Function of “Narrow” Band Gap InN (2002) (13)
- In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies (2007) (13)
- Photoluminescence and reflectance studies of negatively charged excitons in GaAs/Al 0.3 Ga 0.7 As quantum-well structures (2000) (13)
- Perturbation of charges in AlGaN/GaN heterostructures by ultraviolet laser illumination (2004) (13)
- Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies (2006) (12)
- Vertical integration of an In/sub 0.15/Ga/sub 0.85/As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy (1990) (12)
- In rich In1−xGaxN: Composition dependence of longitudinal optical phonon energy (2010) (12)
- Electrical properties of InGaN grown by molecular beam epitaxy (2008) (12)
- Growth of GaAs‐Al‐GaAs by migration‐enhanced epitaxy (1988) (12)
- Heat treatment of semi‐insulating chromium‐doped gallium arsenide substrates with converted surface removed prior to molecular beam expitaxial growth (1983) (11)
- Double modulation-doped AlGaAs/InGaAs heterostructure with a graded composition in the quantum well (1992) (11)
- Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN (2014) (11)
- Stark effect on confined impurities in semiconductor multi-quantum-well structures (1990) (11)
- Electrical and electrothermal transport in InN: The roles of defects (2009) (11)
- Experimental and theoretical studies of lattice dynamics of Mg-doped InN (2007) (11)
- High intensity red emission from Eu doped GaN powders (2008) (10)
- Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications (2008) (10)
- INTERNAL TRANSITIONS OF NEUTRAL AND CHARGED MAGNETO-EXCITONS IN GAAS/ALGAAS QUANTUM WELLS (1998) (10)
- Superconductivity in heavily compensated Mg-doped InN (2009) (10)
- Group III-nitride alloys as photovoltaic materials (2004) (10)
- Fabrication and characterization of ultrashort gate length GaAs field‐effect transistors (1988) (10)
- Effect of thermionic‐field emission on effective barrier height lowering in In0.52Al0.48As Schottky diodes (1993) (10)
- InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates (2008) (10)
- Superconductivity of InN with a well defined Fermi surface (2006) (10)
- Electric and Morphology Studies of Ohmic Contacts on AlGaN/GaN (2000) (10)
- Native defects in InxGa1−xN alloys (2006) (10)
- A spectroscopic study of GaAs homojunction internal photoemission far infrared detectors (1997) (10)
- Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors (1987) (9)
- Topological Phase Diagram of a Two-Subband Electron System (1999) (9)
- Formation of a quasi-two-dimensional electron gas in GaN/AlxGa1−xN heterostructures with diffuse interfaces (2004) (9)
- Grating Demultiplexer Integrated with MSM Detector Array in InGaAs/AlGaAs/ GaAs for WDM (1993) (9)
- Free-to-bound radiative recombination in highly conducting InN epitaxial layers (2004) (9)
- STRAIN-INDUCED SHIFT IN PHOTOLUMINESCENCE ENERGY IN IN0.2GA0.8AS/GAAS QUANTUM WIRES (1995) (9)
- Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system (2008) (9)
- Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy (1998) (9)
- Transition energies and Stokes shift analysis for In‐rich InGaN alloys (2006) (9)
- InGaN/Si heterojunction tandem solar cells (2008) (9)
- Low-temperature scanning tunneling microscope-induced luminescence of GaN (1998) (8)
- Observation of nonequilibrium longitudinal optical phonons in InN and its implications (2004) (8)
- Nonuniformities in GaN/AlN quantum wells (2003) (8)
- In‐vacancies in Si‐doped InN (2010) (8)
- High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts (1998) (8)
- Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy (1989) (8)
- Reduction of Be diffusion in GaAs by migration‐enhanced epitaxy (1989) (8)
- Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxy (1987) (8)
- Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films (2010) (8)
- Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates (2000) (8)
- GaN/SiC heterojunction bipolar transistors (2000) (8)
- The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates (2000) (7)
- Size‐dependent photoluminescence energy and intensity of selective electron cyclotron resonance‐etched strained InGaAs/GaAs quantum boxes (1995) (7)
- Photoluminescence of n‐InN with low electron concentrations (2006) (7)
- TEM studies of as-grown, irradiated and annealed InN films (2007) (7)
- Hot carrier relaxation process in InGaN epilayers (2011) (7)
- Investigation of E1(LO) phonon-plasmon coupled modes and critical points in In1−xGaxN thin films by optical reflectance measurements (2010) (7)
- The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys (2012) (7)
- High efficiency InAlN-based solar cells (2008) (7)
- High speed optical detectors for monolithic millimeter wave integrated circuits (1993) (7)
- The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds (2007) (7)
- In-plane photovoltage measurements on MBE grown InN (2004) (7)
- Energy and momentum relaxation of electrons in bulk and 2D GaN (2004) (7)
- MBE growth and characterization of Mg-doped InGaN and InAlN (2008) (7)
- Optical properties of InN related to surface plasmons (2005) (7)
- Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures (2006) (7)
- Superconducting Properties of InN with Low Carrier Density near the Mott Transition (2012) (6)
- Transmission electron microscopy study of epitaxial InN thin films grown on c -plane sapphire (2006) (6)
- Compositional modulation in InxGa1-xNInxGa1-xN (2006) (6)
- Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces (2001) (6)
- Self-aligned GaAs gate heterojunction SISFET (1987) (6)
- Irradiation‐induced defects in InN and GaN studied with positron annihilation (2010) (6)
- Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers (1989) (6)
- Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy (2007) (6)
- Chapter 2 Device Applications of Strained-Layer Epitaxy (1990) (6)
- SIMS and Raman studies of Mg-doped InN (2008) (6)
- Structural investigations of epitaxial InN by x-ray photoelectron diffraction and x-ray diffraction (2007) (6)
- Alkali azide based growth of high quantum efficiency photocathodes (2014) (6)
- Electron velocity enhancement by planar-doped barrier source in GaAs vertical FET (1988) (6)
- GaN photovoltaic leakage current and correlation to grain size (2010) (6)
- Manifestation of the equilibrium hole distribution in photoluminescence of n‐InN (2005) (6)
- A high voltage-gain GaAs vertical field-effect transistor with an InGaAs/GaAs planar-doped barrier launcher (1990) (6)
- Low-Energy Electron-Excited Nanoluminescence Studies of GaN and Related Materials (2002) (5)
- Effects of hydrostatic pressure on optical properties of InN and In‐rich group III‐nitride alloys (2004) (5)
- Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE (2000) (5)
- Surface electronic properties of Mg‐doped InAlN alloys (2009) (5)
- Effect of Growth Conditions on Optical Response of GaAs Grown at Low Substrate Temperature by MBE (1991) (5)
- Dislocations in GaAs/Si Interfaces (1988) (5)
- Electron Transport Properties of InN (2006) (5)
- Saturation spectroscopy of hot carriers in coupled double quantum well structures. (1994) (5)
- Optical studies of high-field carrier transport of InN thick film grown on GaN (2006) (5)
- EFFECT OF SURFACE ROUGHNESS ON THE EMITTANCE FROM GaAs PHOTOCATHODE (2011) (5)
- High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts (1997) (5)
- The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures (1999) (5)
- Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3 (2007) (5)
- The conductivity of Mg‐doped InN (2006) (5)
- Properties of native point defects in In1−xAlxN alloys (2009) (5)
- 35 μm cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs (2001) (5)
- Reflectance-based optically detected resonance studies of neutral and negatively charged donors in G a A s / A l x Ga 1 − x As quantum wells (2000) (5)
- Electron concentration and mobility profiles in InN layers grown by MBE (2006) (5)
- Termination of the spin-resolved integer quantum Hall effect (1997) (5)
- Growth of high quality InN on production style PA‐MBE system (2008) (4)
- InN: Fermi level stabilization by low‐energy ion bombardment (2006) (4)
- Doping‐dependence of subband energies in quantized electron accumulation at InN surfaces (2007) (4)
- Schottky barrier formation at nonpolar Au/GaN epilayer interfaces (2006) (4)
- Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs (2011) (4)
- Stacking faults and phase changes in Mg‐doped InGaN grown on Si (2009) (4)
- Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn (2010) (4)
- Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer (2007) (4)
- Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy (2001) (4)
- Subpicosecond time-resolved Raman studies of electron–longitudinal optical phonon interactions in InN (2007) (4)
- Transient Absorption of Low-Temperature Molecular-Beam Epitaxy Grown GaAs, (1992) (4)
- High speed optical detectors for monolithic millimeter wave integrated circuits (1993) (4)
- Unintentional incorporation of H and related structural and free‐electron properties of c‐ and a‐plane InN (2012) (4)
- Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures (2000) (4)
- Fabrication and Characterization of Thin-Barrier HEMTs (2011) (4)
- Shallow impurities in quasi-two-dimensional systems: D0 and D− states (1995) (4)
- Comparison of quantum well infrared photodetectors grown on different molecular beam epitaxial systems (1993) (4)
- Strained AlGaInAs/AlGaAs quantum wells and quantum-well lasers grown by molecular beam epitaxy (1993) (4)
- Cubic InN on r-plane sapphire (2004) (4)
- InN{0001} polarity by ion scattering spectroscopy (2005) (4)
- Deep submicron AlGaN/GaN heterostructure field effect transistors for nficrowave and high temperature applications (1994) (4)
- Design, fabrication and characterization of GaN-based HFET's (1997) (3)
- Room-Temperature Time–Resolved Photoluminescence Studies of UV Emission from GaN/AlN Quantum Wells (2002) (3)
- 2DEGs and 2DHGs Induced by Spontaneous and Piezoelectric Polarization in AlGaN/GaN Heterostructures (2000) (3)
- A comparative study of electrical and optical properties of InN and In0.48Ga0.52N (2009) (3)
- MEASURING ELECTRON TRANSFER IN REAL SPACE IN BIASED ASYMMETRIC DOUBLE QUANTUM WELLS USING FAR-INFRARED CYCLOTRON RESONANCE (1997) (3)
- Narrow barriers and tailored confinement states in GaAs AlGaAs quantum wells (1990) (3)
- Temperature effects on the high speed performance of quantum well lasers (1995) (3)
- Ferromagnetism and spin polarization in indium nitride, indium oxynitride, and Cr substituted indium oxynitride films (2014) (3)
- Towards identification of localized donor states in InN (2007) (3)
- Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations (2011) (3)
- Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies (2007) (3)
- Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular‐beam epitaxy (1988) (3)
- Spectroscopy of quasi-2D D- ions in the presence of excess electrons (1994) (3)
- IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET's (1987) (3)
- Phonon scattering suppression in short periodic AlAs/GaAs multiple‐quantum‐well structures (1994) (3)
- Electrical properties of InN grown by molecular beam epitaxy (2004) (3)
- Erratum: "Negative capacitance of GaAs homojunction far-infrared detectors" (Appl. Phys. Lett. 74, 3167 (1999)) (1999) (3)
- Resonant Raman scattering in InGaN alloys (2006) (3)
- High-speed short cavity strained-layer multiple quantum well lasers (1991) (3)
- Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures (2001) (3)
- Transconductance dependence on gate length for GaAs gate SISFETs (1987) (3)
- Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy (2003) (3)
- Preparation of InN and InN-Based Heterostructures by Molecular Beam Epitaxy (2001) (3)
- High-speed MSM photodetectors for millimeter waves (1992) (3)
- Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells (2002) (2)
- Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's) (1987) (2)
- Local electronic and chemical structure at GaN, ALGaN and SiC heterointerfaces (2005) (2)
- Frequency and breakdown properties of AlGaN/GaN HEMTs (2003) (2)
- Effects of Transparent Pt Metal Layer on Performance of InGaN/GaN Multiple-Quantum Well Light-Emitting Diodes (2003) (2)
- A Study of Optical and Electrical Properties of In‐rich In1‐xGaxN (2010) (2)
- Reduction of emitter thickness in AlGaAs/GaAs heterojunction bipolar transistor (1989) (2)
- GaN ballistic negative-differential-conductivity diode for potential THz applications (2007) (2)
- Research on GaN MODFET's (1996) (2)
- Defects and Interfaces in GaAs Grown on Si (1988) (2)
- Differential gain and damping factor in strained inGaAs/GaAs quantum well lasers (1992) (2)
- Femtosecond intersubband dynamics of electrons in AlGaN/GaN-based high-electron-mobility transistors (2004) (2)
- Determination of electron energy distribution in a GaAs vertical field‐effect transistor with hot‐electron injection (1989) (2)
- High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy (1983) (2)
- Ultrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells for Tb/s Operation (2004) (2)
- Nonuniform distribution of strain in InGaAs/GaAs quantum wires (1995) (2)
- Non-equilibrium carrier transport in a high-quality InN film grown on GaN (2005) (2)
- Resonant magneto-polarons in strongly-coupled superlattices (1994) (2)
- Indium nitride: A narrow gap semiconductor (2002) (2)
- BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES (2006) (2)
- D− Impurities in a Quasi-Two-Dimensional System: Statistics and Screening (1993) (2)
- Photocathode Physics for Photoinjectors (2010) (2)
- Far-infrared magneto-optical studies of D− ions and many-electron effects on donor impurities in quasi-2D semiconductor structures (1993) (2)
- Electron Transport and Microwave Noise in MBE- and MOCVD-Grown AlGaN/AlN/GaN (2005) (2)
- Temperature dependence of light-output performance of InGaN/GaN multiple-quantum-well light-emitting diodes with various In compositions (2004) (2)
- Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-A1GaN/GaN heterostructures grown on sapphire substrates (1999) (2)
- RF and DC characterization of P-channel Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate lengths as small as 0.25 mu m (1989) (2)
- Fabrication and characterization of InGaAs/GaAs strained quantum wires grown by molecular beam epitaxy (1993) (2)
- Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies. (2005) (2)
- Power limits of polarization-induced AlGaN/GaN HEMT's (2000) (2)
- Evidence for p‐type InN (2007) (2)
- Direct-write composition patterning of InGaN by focused thermal beam during molecular-beam epitaxy (2007) (1)
- Evidence from EELS of Oxygen in the Nucleation Layer of a MBE grown III-N HEMT (1999) (1)
- Resonant tunnelling and intersubband absorption in AlN – GaN superlattices (2005) (1)
- Time-resolved observation of ballistic acceleration of electrons in GaAs quantum wells (1992) (1)
- Time-resolved optical studies of high-field electron transport in a GaAs quantum-well structure (1992) (1)
- Absorption saturation studies of Landau levels in quasi-two-dimensional systems (1997) (1)
- Relation between structural and optical properties of InN and InxGa1-xN thin films (2004) (1)
- Transport Properties of InN (2009) (1)
- Structural, free-charge carrier and phonon properties of zinc-blende and wurtizte polymorphs in InN epitaxial layers (2012) (1)
- Modulation characteristics of short-cavity strained-layer lasers (1992) (1)
- Long-wavelength (0.1-1.6 mu m) In/sub 0.53/(Ga/sub x/Al/sub 1-x/)/sub 0.47/ As/In/sub 0.53/Ga/sub 0.47/As MSM photodiode (1989) (1)
- A vertical field-effect transistor with an InGaAs/GaAs pseudomorphic planar doped barrier launcher (1989) (1)
- Hydrogen In Group‐III Nitrides: An Ion Beam Analysis Study (2011) (1)
- High‐quality strained quantum wires grown by molecular beam epitaxy on (100) GaAs substrate (1994) (1)
- Conduction band filling in In‐rich InGaN and InN under hydrostatic pressure (2008) (1)
- MBE Grown InN: A Novel THz Emitter (2005) (1)
- Improved performance by optimised planar doped barrier launcher in GaAs vertical FET with very short channel width (1989) (1)
- Characterization of Grain Boundaries in Polycrystalline GaAs (1981) (1)
- Advanced modelling of GaN/AlGaN HEMT devices with field plate (2007) (1)
- A MODFET process for micrometer scale strained layer islands (1994) (1)
- Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer (2013) (1)
- Observation of ballistic transport in hot-electron vertical FET spectrometer using ultrathin planar-doped barrier launcher (1991) (1)
- Characterisation of Al/AlInAs/GaInAs heterostructures (1981) (1)
- Far-Infrared (λc=28.6 μm) GaAs/AlGaAs Quantum Well Photodetectors (1998) (1)
- Monolithic millimeter wave optical receivers (1996) (1)
- Effect of interface states on the performance of GaAs p+-i far-infrared detectors (2000) (1)
- A high performance 0.12 um T-shape gate Ga0.5In0.5As/Al0.5In0.5As MODFET grown by MBE lattice mis-matched on a GaAs substrate (1987) (1)
- Femtosecond intersubband dynamics of electrons in AlGaN/GaN high-electron-mobility transistors (2003) (1)
- Ultrafast all-optical switches based on intersubband transitions for Tb/s operation (2004) (1)
- Strained GaLnAs Quantum Well Lasers Grown By Molecular Beam Epitaxy For Improved Microwave Frequency Modulation Bandwidths (1990) (1)
- Optical and Electrical Properties of Low to Highly-Degenerate InN Films (2003) (1)
- Single and Multiple Quantum Well Strained Layer InGaAs-GaAs-AlGaAs Lasers Grown by Molecular Beam Epitaxy (1990) (1)
- Microwave characterization of corner reflector p-doped multiple quantum-well lasers (1995) (1)
- Strained-layer quantum well lasers grown by molecular beam epitaxy for longer wavelength high-speed applications (1990) (1)
- Extended Pseudomorphic Limits Using Compliant Substrates (1992) (1)
- Vertical Cavity Laser Joint Study Program with Rome Laboratory. (1996) (1)
- Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN (2005) (1)
- Sample preparation technique for cross‐sectional transmission electron microscopy of quantum wire structures (1993) (1)
- Gallium nitride based ballistic electron acceleration negativedifferentialconductivity diodes for potential THZ applications (2005) (1)
- Superconductivity of InN as an intrinsic property (2007) (1)
- Negatively charged excitions (X−) and D− triplet transitions in GaAs/Al0.3Ga0.7As multiple quantum wells (1996) (1)
- Mie Resonant Absorption and Infrared Emission in InN Related to Metallic Indium Clusters (2005) (1)
- Electronic and Optoelectronic Devices Based on GaN-AIGaN Heterostructures (1994) (1)
- Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistors (2006) (1)
- Processing And DC Performance Of Self-Aligned GaAs Gate SISFET (1987) (1)
- Electric-Field Dependence of the Tunneling Escape Time of Electrons from a Quantum Well (1989) (1)
- Anisotropy of the dielectric function for hexagonal InN (2006) (1)
- Erratum: “Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes” [J. Appl. Phys. 113, 104904 (2013)] (2015) (1)
- Recombination processes with and without momentum conservation in degenerate InN (2006) (1)
- Observation of a discontinuous red-shift in the emission spectrum of a two-dimensional electron gas (1999) (1)
- Anisotropic transport in modulation doped quantum well structures (1987) (1)
- Transition energies and bowing parameters for In-rich InGaN and InAlN alloys (2006) (1)
- Strained layer device epitaxy on patterned substrates [MODFETs] (1993) (1)
- 0.2-pm Gate-Length Atomic-Planar Doped Pseudomorphic Alo 3Gao. 7As/Ino .25G~. 75As MODFET's with fT over 120 GHz (1988) (1)
- Femtosecond carrier dynamics in low-temperature-MBE-growm GaAs (1991) (1)
- Transient Studies of Ballistic Acceleration of Electrons in a GaAs Quantum-Well Structure (1991) (1)
- Growth of non-polar a -plane and cubic InN on r -plane sapphire by molecular beam epitaxy (2003) (1)
- Compositional Modulation in InxGa1-xN (2008) (1)
- Influence of temperature on mobility and carrier density of InN films (2006) (0)
- Unravelling the free electron behavior in InN (2008) (0)
- Thermopower measurements of n- and p-type InN (2008) (0)
- Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy (1989) (0)
- Free Carrier Absorption in P-Type Epitaxial Si and GaAs Films for far-Infrared Detection (1997) (0)
- Indium Nitride as novel THz-radiation source for time-domain THz-systems (2007) (0)
- Self-Aligned-Gate Digital AlGaAs/GaAs Modulation-Doped Field Effect Transistor (MODFET) Processing And Short Channel Effects (1987) (0)
- Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts (2003) (0)
- MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE (2009) (0)
- Resonant Impurity-Electron-Optical-Phonon Interactions in GaAs and GaAs/AlGaAs Quantum Wells and Superlattices (1993) (0)
- GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors (1996) (0)
- Optically Detected Resonance of an n-type edge doped GaAs/AlGaAs quantum wells (2000) (0)
- Defect Ordering in InN (2007) (0)
- Subpicosecond characterization of ballistic parallel transport in GaAs quantum wells (1992) (0)
- Electronic and Optical Properties of Energetic Particle-IrradiatedIn-rich InGaN (2005) (0)
- Reflectance-based optically detected resonance studies of neutral and negatively charged dono in GaAs Õ Al (2000) (0)
- FOCUSED THERMAL BEAM DIRECT PATTERNING ON INGAN DURING MOLECULAR BEAM EPITAXY (2007) (0)
- Compositional Ordering in In x Ga 1-x N and its influence on optical properties (2004) (0)
- Violet/Ultraviolet Semiconductor Injection Lasers Using GaN-Based Materials (1998) (0)
- A TEM investigation of multiple quantum wells (1990) (0)
- Exciton Recombination in Nanometer-Wide GaN/AlN Quantum Wells (2009) (0)
- Title : Defect redistribution in postirradiation rapid-thermal-annealed InN Year : 2010 Version : Final (2015) (0)
- High-field cyclotron resonance and electron–phonon interaction in modulation-doped multiple quantum well structures (1998) (0)
- X-ray Spectroscopy of InN heavily irradiated with He (2005) (0)
- Polaronic signatures inintersubband transitions of strongly polarsemiconductor heterostructures (2005) (0)
- Optimization of the optical guide design and cavity design of multiple quantum well lasers for efficient microwave optical links (1995) (0)
- INVESTIGATION OF NATIVE POINT DEFECTS IN Si-DOPED InN (2007) (0)
- Reduction of Be diffusion in GaAs by migration enhanced epitaxy, and the effect of heat treatment on the electrical activation and mobility (1989) (0)
- RF AND DC CHARACTERIZATION OF P-CHANNEL A10.5Ga0.5As / GaAs MODFET'S WITH GATE LENGTH AS SMALL AS 0.25 pm (1989) (0)
- Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers (1992) (0)
- Assessment of the surface electron properties of polar and non-polar InN surfaces (2008) (0)
- Resonance Raman Scattering in InGaN (2005) (0)
- Internal Transitions of Negatively Charged Magneto-Excitons and Many Body Effects in GaAs Quantum Wells (2001) (0)
- Femtosecond Time-Resolved Studies of High-Field Parallel Transport in GaAs Quantum Wells, (1992) (0)
- Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys (2003) (0)
- Relation Between Strucutral and Optical Properties of InN and InxGa 1-xN (2010) (0)
- HIGH EFFICIENCY InAIN-BASED SOLAR CELLS (2008) (0)
- Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy (2005) (0)
- Comparative Analysis of Small Signal and Large Signal parameters in Heterostructure Field Effect Transistors (2019) (0)
- Measuring Non-uniformities in GaN/AlN Quantum Wells (2003) (0)
- Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy (2006) (0)
- III-Nitride High Voltage Power Electronics (2012) (0)
- Title : Self-compensation in highly n-type InN Year : 2012 Version : Final (2015) (0)
- InN Nanorods and Epi-layers: Similarities and Differences (2007) (0)
- MODELING LOCALIZED STATES AND BAND BENDING EFFECTS ON ELECTRON EMISSION ION FROM GaAs (2013) (0)
- Photoemission from III-V Semiconductor Cathodes (2014) (0)
- Temperature dependence of transport properties of InN films (2005) (0)
- On the suppression of phonon-electron scattering in short periodic AlAs/GaAs multiple quantum well structures (1993) (0)
- Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging (2006) (0)
- Investigation of hot‐electron injection and ballistic transport using ultrathin planar doped barrier launchers in vertical field effect spectrometer structures (1992) (0)
- High-speed Short Cavity Strained-Layer Well Lasers Multiple Quantum (1991) (0)
- GaAs Õ InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 (2000) (0)
- Comparison of Structural Perfection of InN layers and InN NanorodsGrown on c- and r-planes Al2O3 (2006) (0)
- GaAs homojunction far-infrared detectors for astronomy applications (1998) (0)
- Optically excited THz generation from InN thin films (2004) (0)
- High-performance GaAs homojunction far-infrared detectors (1998) (0)
- Conduction band effective mass anisotropy and nonparabolicity of InN (2006) (0)
- Excitation Wavelength Dependent Raman Scattering in Low and Highly Degenerate InN Films (2004) (0)
- Temperature dependence of carrier mobility in low to highly degenerate InN films (2004) (0)
- P-type InGaN alloys (2007) (0)
- Comparison of optical spectra from negatively and positively charged excitons in GaAs/AlGaAs quantum well structures (2000) (0)
- On the nature of the near bandedge luminescence of InN epitaxial layers (2005) (0)
- Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN (2006) (0)
- Magnetic-field-induced reduction of singlet binding energies of off-well-center negative donor ions in GaAs/Al0.3Ga0.7As multiple quantum wells (1998) (0)
- Iii-nitrides by molecular beam epitaxy for longer and shorter wavelengths (2004) (0)
- Surface-plasmon-related enhancement of luminescence in InN (2005) (0)
- Evidence from EELS of oxygen in the nucleation layer of a MBE grown III-N HEMT[Electron Energy Loss Spectroscopy, Molecular Beam Epitaxy, High Electron Mobility Transistor] (2000) (0)
- Electronic Properties of Energetic Particle-Irradiated In-rich InGaN Alloys (2005) (0)
- Erratum: “Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction” [J. Appl. Phys. 103, 023504, (2008)] (2008) (0)
- Electron Mobility of InN (2006) (0)
- Ultrafast Raman Studies of Electron Transient Transport in InN Thick Film Grown on GaN (2006) (0)
- Self-aligned resonant tunneling-diode finger structure for high cut-off frequency and device integration (1990) (0)
- Vertical-cavity surface-emitting lasers for flip-chip packaged vertical optical interconnects (1994) (0)
- Exceptional Electron Transport Properties of In-rich InGaN (2006) (0)
- Thermopower of parallel conducting structures (2010) (0)
- III-Nitride High Voltage Nitride Electronics (2013) (0)
- in hexagonal InN (2006) (0)
- Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures (2003) (0)
- Detection of non‐equilibrium longitudinal optical phonons in InN and its consequences (2005) (0)
- Graded InGaAs/GaAs strained-layer single quantum well laser (1993) (0)
- Pulsed terahertz emission from indium nitride thin films (2004) (0)
- Compositional Modulation in InxGa 1-xN (2008) (0)
- Effects of Donors on Far Infrared Many-Electron Magneto-Optical Transitions in GaAs/AlGaAs Multiple Quantum Wells (1997) (0)
- Semiconductor laser joint study program with Rome Laboratory (1994) (0)
- Comparison of threshold current and microwave modulation of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs single quantum well lasers (1990) (0)
- Quantitative compositional mapping of InxGa1-XAs/GaAs quantum wells by annular dark field imaging (1995) (0)
- Variation of high-frequency laser parameters with well number in strained-layer QW lasers (1992) (0)
- Carrier Recombination, Relaxation, and Transport Dynamics in InN (2005) (0)
- Carrier Beconfinement Limited Velocity in Pseudomorphic AlGa Aslln Cia As Modula tion- Doped Field Effect Transistors (1987) (0)
- THz optical Hall-effect and MIR-VUV ellipsometry characterization of 2DEG properties in HfO$_{2}$ passivated AlGaN/GaN HEMT structures (2011) (0)
- A1(LO)phonon in degenerate InN semiconductor films (2005) (0)
- Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy (1997) (0)
- Raman spectra of low and highly degenerate InN films (2004) (0)
- The design and fabrication of monolithic millimeter wave optical receivers (1995) (0)
- Defect Doping of InN (2007) (0)
- Magnetic-field-dependent multi-line cyclotron resonance in modulation-doped GaAs/AlGaAs quantum wells (1998) (0)
- Magnetic-Field-Induced Reduction of Singlet Binding Energies of Off-Well-Center Negative Donor Ions in GaAs/Al_0.3Ga_0.7As Multiple Quantum Wells (1997) (0)
- Isolated Impurities, Impurity Bands and the Metal-Insulator Transition in Modulation-Doped Multiple-Quantum-Well Structures in Magnetic Fields (1990) (0)
- Frequency and breakdown properties of AlGaN/GaN HEMTs (2003) (0)
- Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials (1989) (0)
- Pulsed terahertz emission from indium nitride thin films (2004) (0)
- New insight into the free carrier properties of InN (2008) (0)
- Si Doping of High-Al-Mole Fraction AlxGa 1-xN Alloys with rf Plasma-Induced Molecular-Beam-Epitaxy Jeonghyun (2017) (0)
- Magnetic field induced metal-insulator transitions in modulationdoped multiple-quantum-well structures (1992) (0)
- High-speed GaAs heterojunction phototransistor grown by molecular beam epitaxy (1983) (0)
- Short-Cavity -Length Multiquantum-Well S trained-Lay er Lasers (1991) (0)
- Near resonance enhanced Raman scattering and room temperature photoluminescence in highly degenerate InN films (2005) (0)
- Pulsed THz-emission and carrier concentrations in InN (2006) (0)
- Novel far-infrared detectors for space applications (1999) (0)
- Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy (2008) (0)
- Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures (1998) (0)
- Using JPF1 format (2001) (0)
- Microstructure and composition of mixed GaAsN/GaN films (1998) (0)
- Surface and Bulk Properties of InN (2005) (0)
- Electrolyte-based capacitance voltage analysis of InN (2006) (0)
- InGaAs-GaAs strained layer multiple quantum well lasers fabricated by chemically assisted ion beam etching (1991) (0)
- Polaronic signatures in intersubband transitions of strongly polar semiconductor heterostructures (2005) (0)
- Ultrafast carrier dynamics in InNepilayers (2004) (0)
- Effect Trans i s t or s t-Channel GaN/AlGaN terostructure Field (1996) (0)
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What Schools Are Affiliated With William J. Schaff?
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