Winfried Mönch

Winfried Mönch's AcademicInfluence.com Rankings

Winfried Mönch

Computer Science

#6670

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#7030

Historical Rank

Machine Learning

#2241

World Rank

#2269

Historical Rank

Artificial Intelligence

#2508

World Rank

#2549

Historical Rank

Database

#3752

World Rank

#3906

Historical Rank

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Computer Science

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Winfried Mönch's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Semiconductor Surfaces and Interfaces (1994) (1196)
Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities (1999) (403)
Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers (1997) (363)
Role of virtual gap states and defects in metal-semiconductor contacts. (1987) (263)
Correlation between barrier height and interface structure of Ag/Si(111) Schottky diodes (1995) (198)
Metal-semiconductor contacts: electronic properties (1994) (181)
Electron affinity of AlxGa1−xN(0001) surfaces (2001) (159)
Empirical tight‐binding calculation of the branch‐point energy of the continuum of interface‐induced gap states (1996) (144)
Electronic Properties of Semiconductor Interfaces (2004) (122)
On the electronic structure of clean, 2×1 reconstructed silicon (001) surfaces (1981) (94)
Lead contacts on Si(111):H-1 × 1 surfaces (1995) (87)
Chemical trends of barrier heights in metal-semiconductor contacts: on the theory of the slope parameter (1996) (82)
Physics of reconstructed silicon surfaces (1979) (82)
Mechanisms of Schottky‐barrier formation in metal–semiconductor contacts (1988) (81)
Chemisorption-induced defects at interfaces on compound semiconductors (1983) (80)
Freezing transition for colloids with adjustable charge: A test of charge renormalization. (1995) (72)
Phonons in 3C-, 4H-, and 6H-SiC (1995) (69)
Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states (1998) (68)
Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures (2011) (66)
Electronic properties of ideal and interface‐modified metal‐semiconductor interfaces (1996) (65)
Experimental study of muon bundles observed in the Fréjus detector. (1989) (64)
Oxygen and hydrogen adsorption on GaAs(110) (1983) (64)
Barrier heights of GaN Schottky contacts (1997) (60)
Barrier Heights of Metal Contacts on H-Terminated Diamond: Explanation by Metal-Induced Gap States and Interface Dipoles (1994) (59)
Electronic Structure of Metal-Semiconductor Contacts (1990) (59)
Negative electron affinity of cesiated p-GaN(0001) surfaces (1998) (58)
Surface analysis of 6HSiC (1996) (56)
Chemisorption-Induced Defects on GaAs(110) Surfaces (1982) (55)
Determination of Surface States at Clean, Cleaved Silicon Surfaces from Photoconductivity (1971) (55)
Combined LEED, AES, and work function studies during the formation of Ge : GaAs(110) heterostructures (1980) (53)
The electronic structure of Ge:GaAs(110) interfaces (1982) (52)
Adsorption of chlorine and oxygen on cleaved InAs(110) surfaces: Raman spectroscopy, photoemission spectroscopy, and Kelvin probe measurements (1989) (50)
Pinning of the Fermi level close to the valence‐band top by chlorine adsorbed on cleaved GaAs(110) surfaces (1987) (49)
Charge transfer from chemical shifts at (110) surfaces of III–V compound semiconductors (1986) (48)
Cleaved Si(111) surfaces: Geometrical and annealing behaviour (1979) (46)
On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures (2007) (45)
Oxidation stages of clean and H-terminated Si(001) surfaces at room temperature (1994) (45)
Chemical trends in Schottky barriers: Charge transfer into adsorbate-induced gap states and defects (1988) (44)
Virtual gap states and Fermi level pinning by adsorbates at semiconductor surfaces (1986) (43)
On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts (2012) (43)
Surface States on Clean and on Cesium-Covered Cleaved Silicon Surfaces (1970) (42)
DataLad: distributed system for joint management of code, data, and their relationship (2021) (42)
On the interaction of cesium with cleaved GaAs(110) and Ge(111) surfaces: Work function measurements and adsorption site model (1978) (41)
Influence of the interface structure on the barrier height of homogeneous Schottky contacts (1999) (41)
Optical properties of dangling-bond states at cleaved silicon surfaces (1980) (38)
On the correlation of geometrical structure and electronic properties at clean semiconductor surfaces (1977) (38)
Oxidation of cleaved InAs(1 1 0) surfaces at room temperature: Surface band-bending and ionization energy (1986) (36)
Experimental evidence for asymmetric dimers on clean Si(001) surfaces (1980) (36)
Surface states at clean, cleaved GaAs(110) surfaces (1979) (36)
Correlation of electronic surface properties and surface structure on cleaved silicon surfaces (1972) (35)
Dispersion of GaAs(110) surface phonons measured with HREELS. (1994) (35)
On the band structure lineup of ZnO heterostructures (2005) (35)
On metal-semiconductor surface barriers (1970) (34)
On the reliability of the Raman spectra of boron-rich solids (1999) (34)
Tight-Binding Model of Surface Donor-States Induced by Metal Adatoms on GaAs(110) Surfaces (1988) (34)
Electronic properties of sulfur adsorbed on cleaved GaAs surfaces (1988) (34)
Surface phonons in InP(110) (1995) (33)
Slope parameters of the barrier heights of metal-organic contacts (2006) (33)
On the geometrical structure of cleaved Si (111) surfaces (1978) (32)
Elementary calculation of the branch-point energy in the continuum of interface-induced gap states (1997) (31)
Electronic properties of cesium-covered GaN(0001) surfaces (1998) (30)
Angle-resolved photoemission from Si(100): Direct versus indirect transitions (1986) (29)
Chemisorption of oxygen at cleaved GaAs(110) surfaces: Photon stimulation and chemisorption states (1984) (29)
Angle-resolved photoemission from Si(100): Identification of bulk band transitions (1985) (26)
Electronic properties of cesium on 6H‐SiC surfaces (1996) (26)
Surface studies by modulation spectroscopy (1973) (25)
Oxidation of clean and H-terminated SiC surfaces (1997) (25)
Photoluminescence of boron carbide (2004) (24)
Low-energy electron diffraction from Si(111)-2?1: theory and experiment (1979) (24)
Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular‐beam epitaxy: X‐ray and soft x‐ray photoemission spectroscopy (1990) (24)
On the band-structure lineup at Schottky contacts and semiconductor heterostructures (2014) (23)
On the band structure lineup at interfaces of SiO2, Si3N4, and high-κ dielectrics (2005) (23)
Electronic characterization of compound semiconductor surfaces and interfaces (1983) (23)
Oxidation of GaAs(100) and GaAs(311) surfaces (1989) (23)
Chemical trends in Schottky barriers: Charge transfer into adsorbate-induced gap states and defects. (1988) (22)
Oxidation of clean and H-passivated Si(111) surfaces (1992) (22)
Adsorption of germanium and of oxygen on cleaved InP(110) surfaces: Auger electron spectroscopy and measurements of work function and of surface photovoltage (1985) (22)
Nitride layers on GaAs(110) surfaces (1991) (22)
Electronic properties and chemical interactions at III?V compound semiconductor surfaces: Germanium and oxygen on GaAs(110) and InP(110) cleaved surfaces (1985) (22)
Oxidation of InAs(110) and correlated changes of electronic surface properties (1986) (21)
Oxidation of GaN{0001}-11 surfaces at room temperature (1999) (21)
Buckling: an essential feature of the Si(111)2×1 surface geometry (1984) (20)
On Structural and Electronic Properties of Cleaved Silicon Surfaces (1974) (20)
On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states (2008) (20)
Bromine-induced surface states on cleaved GaAs(110) surfaces: experiment and tight-binding model (1992) (19)
Hydrogen-induced surface acceptors on GaAs(100) surfaces at low temperatures (1991) (18)
On the Present Understanding of Schottky Contacts (1986) (17)
On the growth mode of oxide films on cleaved GaAs(110) surfaces at room temperature (1986) (17)
Oxidation of InAs(110) surfaces: Auger electron, electron energy loss and ultraviolet photoemission spectroscopy (1987) (16)
Adsorbate-induced Surface States and Fermi-level Pinning at Semiconductor Surfaces (1989) (16)
An experimental study on the temperature dependence of electron affinity and ionization energy at semiconductor surfaces (1981) (16)
Some comments on the determination and interpretation of barrier heights of metal–semiconductor contacts (2007) (16)
Mechanisms of barrier formation in schottky contacts: Metal-induced surface and interface states (1990) (16)
Silver schottky contacts on Si(111)∶ H-(1×1) surfaces prepared by wet-chemical etching (1995) (15)
Electronic properties of cleaved GaAs(110) surfaces covered with cesium (1975) (15)
Electronic and structural properties of steps on cleaved semiconductor surfaces (1980) (15)
Dynamical properties of 3C-, 4H-, and 6HSiC surfaces (1998) (15)
Interface-induced gap states and band-structure lineup at TiO2 heterostructures and Schottky contacts (2010) (15)
SCHOTTKY CONTACTS ON TERNARY COMPOUND SEMICONDUCTORS: COMPOSITIONAL VARIATIONS OF BARRIER HEIGHTS (1995) (14)
Anion inclusions in III‐V semiconductors (1983) (14)
On the chemisorption of Ge on GaAs(110) surfaces: UPS and work function measurements (1982) (13)
On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts (2016) (13)
Explanation of multiplet spots in low-energy electron diffraction patterns of clean GaN surfaces (1999) (13)
Growth of AlN on GaAs(110) by reactive molecular beam deposition (1992) (12)
Vibrational modes of hydrogen and deuterium at InP(110) surfaces (1996) (12)
Electrical and optical properties of p-SiC/n-GaN heterostructures (1997) (12)
Explanation of the barrier heights of graphene Schottky contacts by the MIGS-and-electronegativity concept (2016) (12)
Surface photovoltage spectroscopy with cleaved GaAs (110) surfaces: Spectroscopy of Cr2+ (1981) (12)
Low-energy electron energy-loss spectroscopy with Ge:GaAs (110) heterostructures (1982) (12)
Charge transfer to oxygen chemisorbed on cleaved GaAs(110) surfaces (1980) (12)
Surface Phonons in Spectral Oscillations in the Photoconductivity on Silicon (111) Surfaces (1973) (11)
On the physics of clean silicon surface (1973) (11)
Vibrational and electronic excitations at GaN{0001} surfaces (2000) (11)
Atomic nitrogen on InAs(110) surfaces at room temperature (1993) (11)
Segregation of As on GaAs(110) surfaces observed immediately after cleavage (1983) (11)
Temperature and Pressure Effects (2004) (11)
Channel Conductivity of Cleaved and Annealed Germanium Surfaces (1971) (10)
Valence-band discontinuity at the interface (1999) (10)
Ionization Energy and Electron Affinity of Clean and Oxidized Al x Ga 1−x N(0001) Surfaces (2001) (10)
Oxidation mechanism of III–V semiconductors (1990) (10)
Vibrations at 3C-SiC(001)-(32) surfaces (1999) (9)
Hydrogen-induced variations of the ionization energy on GaAs(110) surfaces. (1992) (9)
Chemical and electronic properties of aluminium nitride on GaAs(110) (1992) (9)
Vibrational properties of GaN(0001) surfaces (1998) (9)
Experience with Revision Arthroplasties for Failed Cemented Total Hip Replacements Using Uncemented Lord and PM Prostheses (1984) (9)
Cesium on GaP(110) surfaces: A confirmation of the metal-induced gap states-plus-defects model (1993) (9)
Hydrogen-Modification of Electronic Surface, Bulk, and Interface Properties of Si (1997) (8)
Adsorption of chlorine on GaAs(110) investigated by high-resolution electron energy-loss spectroscopy (1994) (8)
Adsorption of atomic nitrogen at GaAs(110) surfaces (1990) (8)
The Schottky barrier height of caesium on n-Si(111)-7 ? 7 surfaces (1999) (7)
Bending and stretching vibrations of hydrogen and deuterium at GaAs(110) surfaces (1996) (7)
Electron escape depths in germanium (1981) (6)
On the oxidation of III–V compound semiconductors (1986) (6)
Work Function and Band Bending at Semiconductor Surfaces (1984) (6)
Metal Contacts on a-GaN (1996) (6)
Oxidation of silver-passivated Si(111): Ag-(√3 × √3)R30° surfaces (1996) (5)
Physisorption and chemisorption of O2 on GaAs(110) surfaces: a Kelvin-probe study (1993) (5)
Abstract: On the geometric structure of clean Si(111) surfaces (1979) (5)
Calculation of valence-band offsets of lattice-matched GaInTlP/InP heterostructures and of Schottky barrier heights of metal–GaInTlP contacts (1997) (5)
Mechanisms of Barrier Formation in Schottky Contacts (1989) (5)
Halogen-induced surface states acceptors on GaAs(110) surfaces (1993) (5)
125 years of metal-semiconductor contacts: Where do we stand? (1999) (5)
Oscillations in photoconductivity due to surface phonons (1973) (4)
Electronic properties of NH3 adsorbed on InP(110) surfaces at room temperature (1990) (4)
HREELS investigation of hydrogenated and deuterated GaN{0001} surfaces (2000) (4)
On the recombination kinetics of photo‐created carriers at clean, cleaved silicon surfaces (1974) (4)
Improved thermal stability of GaN{0001} surfaces by adsorbed C60 molecules (2000) (4)
Growth of AlN films on Ga- and As-rich GaAs(001) surfaces (1995) (4)
Barrier Heights of 3C– and 6H–SiC Schottky Contacts: Explanation by the MIGS–and–Electronegativity Model (1994) (4)
Summary Abstract: Oxygen on GaAs(110): New results confirming the two‐step uptake‐model (1986) (4)
Surface science lettersAn experimental study on the temperature dependence of electron affinity and ionization energy at semiconductor surfaces (1981) (4)
Comment on 'Initial stages of nitridation of Si(111) surfaces: X-ray photoelectron spectroscopy and scanning tunneling microscopy studies' by M. Tabe and T. Yamamoto. [Surf. Sci. 376 (1997) 99] (1999) (4)
Formation of nitride layers on 6H-SiC surfaces (1998) (4)
Electron-stimulated desorption and adsorption sites of chlorine on GaAs(110) surfaces (1993) (4)
Influence of the interface structure on the barrier height of homogeneous Pb / n − Si ( 111 ) Schottky contacts (3)
The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide (2004) (3)
Surface‐photovoltage effects on adsorbate‐covered semiconductor surfaces at low temperatures (1991) (3)
Oxidation of Silicon and III–V Compound Semiconductors (1993) (3)
Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium (1993) (3)
Hydrogen Stretching Vibrations at GaAs(110) and InP(110) Surfaces: An Electron Energy-Loss Fine Structure Study (1997) (3)
Surface donors induced by hydrogen and cesium absorbed on InP(110) surfaces (1990) (3)
Fluorine adsorption on GaAs(110) surfaces and the onset of etching after XeF2 exposures (1996) (3)
Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Contacts (1995) (2)
The IFIGS-and-Electronegativity Theory (2004) (2)
Comment on “A study on barrier height in Au–AlxGa1−xN Schottky diodes in the range 0≤x≤0.2” by M. R. H. Khan, H. Nakayama, T. Detchprohm, K. Hiramatsu and N. Sawaki in Solid-State Electronics, 1997 41, 287 (1998) (2)
On selenium p–n heterojunctions and Schottky contacts (2015) (2)
Surface Space-Charge Region in Thermal Equilibrium (1995) (2)
On the surface physics of III–V compound semiconductors (1984) (2)
First-Principles Calculations of Barrier Heights and Valence-Band Offsets (2004) (2)
Cleaved {110} Surfaces of III–V and II–VI Compound Semiconductors (1995) (1)
Band-Structure Lineup at I–III–VI2 Schottky Contacts and Heterostructures (2006) (1)
Some Aspects of Surface Science Related To MBE (1985) (1)
Surface Passivation by Adsorbates and Surfactants (1995) (1)
On the Temperature Coefficient of the Ionization Energy in III-V Compound Semiconductors (1985) (1)
{100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide (2001) (1)
Summary Abstract: Segregation of As observed on clean, cleaved GaAs(110) surfaces (1983) (1)
Determination of Barrier Heights and offsets (2004) (1)
Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states (2018) (1)
Formation of AlN films on GaAs(001) and GaAs(110) surfaces by reactive molecular beam deposition (1994) (1)
NH3-induced surface states and dipoles of InP(110) surfaces (1990) (1)
Studies on as-grown, Cl-covered surfaces of YBa2Cu3O7-δ films (1993) (0)
Group-V Adatoms (1995) (0)
Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces (1995) (0)
Deep Levels at Compound-Semiconductor Interfaces (1988) (0)
Valence-band discontinuity at the C60/Si(111)-7 x 7 interface (1999) (0)
Interaction of Nitrogen With 6H-SiC Surfaces (1998) (0)
The formation of a Schottky barrier: Na on GaAs(110) (1994) (0)
{111} Surfaces of Compounds with Zincblende Structure (1995) (0)
Hydrogen-induced surface acceptors on GaAs(110) surfaces at low temperatures (1991) (0)
Comment on “Band gap and band offset of (GaIn)(PSb) lattice matched to InP” [Appl. Phys. Lett.87, 032102 (2005)] (2006) (0)
Extrinsic Interface Dipoles (2004) (0)
Surface Space-Charge Region in Non-Equilibrium (1995) (0)
Surface studies on polycrystalline YBa2Cu3O7−δ with Auger electron and low-energy electron energy-loss spectroscopy (1993) (0)
Silicon Surface States from Photoconductivity (1972) (0)
Cleaved Silicon and Germanium {111} Surfaces (1993) (0)
Surface and interface properties of cleaned and Ag-covered YBa2Cu3O7-x films (1993) (0)
Deposition of Cs on Graphitized 4H-SiC Surfaces (1997) (0)
Phase Transitions on Silicon and Germanium {111} Surfaces (1995) (0)
The Adsorption of Gallium on the Cleaved Surface of InP,InAs and InSb (1989) (0)
Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces (1995) (0)
Group-III Adatoms on Silicon Surfaces (1995) (0)
8. Electronic Properties of Semiconductor Interfaces (2017) (0)
Surface States at Clean and Cesiated Ge (111) Surfaces (1974) (0)
{100}Surfaces of III–V, II–VI, and I–VII Compound Semiconductors with Zincblende Structure (1995) (0)
On electronic properties of cleaved and cesiated GaAs(110) and Ga(111) surfaces (1975) (0)
Laterally Inhomogeneous Schottky Contacts (2004) (0)
Barrier Heights and Extrinsic Interface Defects (2004) (0)
The IFIGS-and-Electronegativity Concept: Experiment and Theory (2004) (0)
{100} Surfaces of Silicon, Germanium, and Cubic Silicon Carbide (1995) (0)

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What Schools Are Affiliated With Winfried Mönch?

Winfried Mönch is affiliated with the following schools:

University of Duisburg-Essen

Winfried Mönch's Academic­Influence.com Rankings

Why Is Winfried Mönch Influential?

Winfried Mönch's Published Works

Published Works

What Schools Are Affiliated With Winfried Mönch?

Winfried Mönch's AcademicInfluence.com Rankings