Wolfgang J. Choyke

Wolfgang J. Choyke's AcademicInfluence.com Rankings

Wolfgang J. Choyke

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Wolfgang J. Choyke's Published Works

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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Silicon carbide : recent major advances (2004) (427)
Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3 C , 4 H , 6 H , 1 5 R , and 2 1 R (1968) (400)
Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy (1997) (361)
An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy (1991) (261)
Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001̄) (1986) (250)
Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption (1963) (222)
Physical Properties of SiC (1997) (197)
Static Dielectric Constant of SiC (1970) (197)
Nitrogen donors in 4H‐silicon carbide (1993) (171)
Raman Scattering in 6H SiC (1968) (168)
Raman scattering studies of chemical‐vapor‐deposited cubic SiC films of (100) Si (1988) (157)
Adsorption and thermal behavior of ethylene on Si(100)-(2 × 1) (1992) (148)
Methods in semiconductor surface chemistry (1987) (146)
Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide (1992) (138)
Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study (2005) (137)
Field effect in epitaxial graphene on a silicon carbide substrate (2007) (134)
Low‐temperature photoluminescence studies of chemical‐vapor‐deposition‐grown 3C‐SiC on Si (1988) (134)
Silicon carbide : a review of fundamental questions and applications to current device technology (1997) (132)
EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SiC (1962) (130)
Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers (1991) (123)
Photoluminescence of Radiation Defects in Ion-Implanted 6 H SiC (1972) (123)
Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths (1999) (122)
Theoretical study of the mechanism of dry oxidation of 4H-SiC (2005) (122)
Adsorption and decomposition of acetylene on Si(100)-(2×1) (1992) (121)
Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity (2001) (116)
Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å (1998) (116)
Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers (1990) (115)
Photoluminescence and transport studies of boron in 4H SiC (1998) (110)
The Adsorption and Decomposition of NH3 on Si(100) - Detection of the NH2(a) Species (1989) (109)
Direct determination of absolute monolayer coverages of chemisorbed C2H2 and C2H4 on Si(100) (1990) (106)
On the ‘‘band‐A’’ emission and boron related luminescence in diamond (1992) (104)
Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite Structure (1966) (103)
Atomic Hydrogen Driven Halogen Extraction from Si(100) -- Eley-Rideal Surface Kinetics (1992) (102)
Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates (1992) (102)
Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition (1995) (101)
Studies of SiC Formation on Si(100) by Chemical Vapor Deposition (1985) (101)
Nanoporous SiC: A Candidate Semi-Permeable Material for Biomedical Applications (2004) (98)
Luminescence of Donor-Acceptor Pairs in Cubic SiC (1970) (97)
Growth of large SiC single crystals (1993) (97)
Optical Characterization of Silicon Carbide Polytypes (1997) (94)
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC (2001) (91)
Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system (1988) (91)
Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy (1990) (87)
Identification of the carbon dangling bond center at the 4H-SiC/SiO(2) interface by an EPR study in oxidized porous SiC. (2004) (86)
Ion beam modification of 6H/15R SiC crystals☆ (1986) (86)
Aggregation of carbon interstitials in silicon carbide: A theoretical study (2003) (84)
SiC boule growth by sublimation vapor transport (1991) (82)
Chlorine bonding sites and bonding configurations on Si(100)–(2×1) (1993) (81)
Large diameter 6H-SiC for microwave device applications (1994) (81)
Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide (1994) (79)
Characterization of nanocrystallites in porous p‐type 6H‐SiC (1994) (76)
Photoluminescence of Radiation Defects in Cubic SiC: Localized Modes and Jahn-Teller Effect (1971) (75)
Comparative oxidation studies of SiC(0001̄) and SiC(0001) surfaces (1986) (71)
Low temperature photoluminescence spectra of (001) CdTe films grown by molecular beam epitaxy at different substrate temperatures (1986) (70)
Si impurity in chemical vapor deposited diamond films (1991) (69)
Intense erbium‐1.54‐μm photoluminescence from 2 to 525 K in ion‐implanted 4H, 6H, 15R, and 3C SiC (1994) (67)
Recombination-enhanced defect reactions strong new evidence for an old concept in semiconductors (1977) (59)
Correlation between the antisite pair and the D-I center in SiC (2003) (59)
Luminescence of 4H SiC, and Location of Conduction-Band Minima in SiC Polytypes (1965) (58)
CL2 DISSOCIATION ON SI(100)-(2X1) : A STATISTICAL STUDY BY SCANNING TUNNELING MICROSCOPY (1998) (58)
Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering (2002) (57)
Photoelectrochemical etching of n-type 4H silicon carbide (2004) (57)
Application of oxidation to the structural characterization of SiC epitaxial films (1991) (56)
The location and shape of the conduction band minima in cubic silicon carbide (1977) (56)
Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix (2003) (56)
Multiple bonding structures of C2H2 chemisorbed on Si(100) (2001) (55)
Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC (1993) (54)
Hydrocarbon Surface Chemistry on Si(100) (1993) (54)
Higher Absorption Edges in 6H SiC (1968) (53)
Absorption of Light in Alpha SiC near the Band Edge (1957) (52)
Electron spectroscopy study of SiC (1984) (52)
Cathodoluminescence and annealing study of plasma-deposited polycrystalline diamond films (1991) (51)
Optical Detection of Magnetic Resonance for an Effective-Mass-like Acceptor in6H-SiC (1980) (49)
Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T (1998) (48)
Radiation-induced defect centers in 4H silicon carbide (1997) (48)
Growth of improved quality 3C-SiC films on 6H-SiC substrates (1990) (47)
Chemical activity of the C=C double bond on silicon surfaces (1986) (47)
Localized vibrational modes of a persistent defect in ion-implanted SiC (1973) (46)
Infrared reflectance of thick p-type porous SiC layers (1996) (45)
Photoluminescence of Nitrogen-Exciton Complexes in6HSiC (1963) (45)
Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study (2002) (44)
Silicon Carbide (SiC) (1997) (43)
Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC∕SiO2 interfaces in oxidized porous SiC (2006) (43)
High pressure X-ray investigations on 3C-SiC (1987) (42)
Step Formation on Hydrogen-etched 6H-SiC{0001} Surfaces (2008) (42)
Defect- and electron-enhanced chemistry at silicon surfaces: Reactivity and thermal desorption of propylene on Si(100)-(2 × 1) (1986) (42)
Photoluminescence of Ti in four SiC polytypes (1974) (41)
Thermal stability of the methyl group adsorbed on Si( 100): CH3I surface chemistry (1991) (41)
Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor (2002) (40)
Lattice Absorption Bands in SiC (1961) (40)
A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substrates (1985) (40)
Reaction chemistry at the Si (100) surface—control through active‐site manipulation (1986) (39)
A photoluminescence comparison of CdTe thin films grown by molecular‐beam epitaxy, metalorganic chemical vapor deposition, and sputtering in ultrahigh vacuum (1988) (39)
Si-F bond directions on Si(100) — A study by ESDIAD (1987) (36)
X-ray photoelectron spectroscopy study of Si-C film growth by chemical vapor deposition of ethylene on Si(100) (1989) (36)
Enhanced silicon oxide film growth on Si (100) using electron impact (1997) (36)
Optical Absorption inn-Type Cubic SiC (1969) (36)
Metastable materials formation by ion implantation : proceedings of the Materials Research Society annual meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A. (1982) (35)
Oxygen‐related centers in chemical vapor deposition of diamond (1993) (34)
Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons Revisited (1976) (34)
Simulation of Radiation Damage in Solids (1981) (34)
Direct observation of conduction-band structure of 4H- and 6H-SiC using ballistic electron emission microscopy (1998) (33)
Infrared reflectance of thin aluminum nitride films on various substrates (1993) (33)
Observation of an Electron-Hole Liquid in Cubic SiC (1978) (33)
Comparison of Cl2 and HCl adsorption on Si(100)−(2 × 1) (1993) (32)
Optical reflectivity of 3C and 4H‐SiC polytypes: Theory and experiment (1993) (31)
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy (2001) (31)
Helium effects in ion-bombarded 304 stainless steel (1979) (31)
Optical and Electronic Properties of SiC (1990) (31)
Fabrication and morphology of porous p-type SiC (2005) (31)
Porous Silicon Carbide as a Membrane for Implantable Biosensors (2004) (31)
Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC (1998) (30)
Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates (2004) (30)
Effect of oxygen on boron doping in chemical vapor deposition of diamond as deduced from cathodoluminescence studies (1992) (29)
Cryogenic cathodoluminescence of plasma‐deposited polycrystalline diamond coatings (1990) (28)
Thermal stability of the carbon-carbon bond in Ethylene adsorbed on Si(100): An isotopic mixing study (1990) (27)
The dissociative adsorption of ammonia on Si(100) (1989) (26)
Higher Absorption Edges in Cubic SiC (1969) (25)
OPTICALLY DETECTED ELECTRON PARAMAGNETIC RESONANCE OF ALN SINGLE CRYSTALS (1999) (25)
Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC (2000) (25)
Refractive Index and Low-Frequency Dielectric Constant of 6H SiC (1968) (24)
Comparative columnar porous etching studies on n‐type 6H SiC crystalline faces (2008) (24)
Silicon crystal heating and thermocouple mounting designs (1997) (24)
Interaction of atomic hydrogen with the surface methyl group on Si(100) — removal of surface carbon (1992) (23)
CH and CD Bond-Stretching Modes in the Luminescence of H- and D-Implanted SiC (1972) (23)
Efficient luminescence centers in H- and D-implanted 6H SiC (1973) (23)
Structural defect related donor-bound exciton spectra in CdTe epitaxial films (1988) (21)
Exciton Complexes and Donor Sites in33RSiC (1965) (21)
An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7 × 7) (1990) (21)
Absorption of Light in Se near the Band Edge (1957) (20)
Ion irradiation effects on high strength, high conductivity copper alloys☆ (1986) (20)
Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy (2007) (20)
Electron stimulated decomposition of adsorbed hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane, Cu(I)(hfac)(vtms) (1999) (20)
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission (2002) (20)
Ni impurity effec̀ts on hydrogen surface chemistry and etching of Si(111) (1990) (20)
Direct images of isotropic and anisotropic vibrations in the Cl-Si and H-O-Si chemisorption bonds on Si(100) (1994) (20)
Ab initio supercell calculations on aluminum-related defects in SiC (2007) (20)
Electron Emission from Breakdown Regions in SiCp−nJunctions (1959) (20)
Characterization of molecular beam epitaxially grown HgCdTe on CdTe and InSb buffer layers (1986) (20)
Alkyl radical involvement in silicon surface chemistry (1987) (20)
Optical Properties of 21R SiC: Absorption and Luminescence (1965) (19)
Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide (2001) (19)
The adsorption and surface reaction of SiCl4 on Si(100)-(2 × 1) (1994) (18)
A Short Synopsis of the Current Status of Porous SiC and GaN (2005) (18)
ROLE OF THE -SIH3 FUNCTIONAL GROUP IN SILANE ADSORPTION AND DISSOCIATION ON SI(100) (1997) (18)
Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect (2002) (17)
DII Revisited in an Modern Guise - 6H and 4H SiC (1997) (17)
Phosphorus-related deep donor in SiC (2000) (17)
Progress in the study of optical and related properties of SiC since 1992 (1997) (17)
Self-Ordered Nanocolumnar Pore Formation in the Photoelectrochemical Etching of 6H SiC (2007) (17)
The effects of sequential and simultaneous helium implantation on void formation in a 304 stainless steel (1978) (17)
Reflector atomic hydrogen source: A method for producing pure atomic hydrogen in ultrahigh vacuum (1993) (17)
XPS and SIMS studies of MBE-grown CdTe/InSb(001) heterostructures (1995) (16)
Atomic H : a reagent for the extraction of chemical species from Si surfaces (1993) (16)
Two mechanisms of scanning tunneling microscopy assisted nanostructure formation using precursor molecules (1999) (16)
Boron-vacancy complex in SiC (1999) (16)
The Resistance of Semitransparent Photocathodes (1956) (16)
SiC pore surfaces: Surface studies of 4H–SiC(11¯02) and 4H–SiC(1¯102¯) (2006) (15)
Effects of implantation and annealing temperatures on implantation induced damage in HgCdTe (1982) (15)
Defect-engineering in SiC by ion implantation and electron irradiation (2006) (15)
Oxygen in silicon carbide : shallow donors and deep acceptors (1999) (15)
Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation (2000) (14)
SiC Defect Density Reduction by Epitaxy on Porous Surfaces (2001) (14)
Activation of shallow boron acceptor in C∕B coimplanted silicon carbide: A theoretical study (2005) (14)
Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions (2001) (14)
Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopy (1998) (14)
Photoluminescence of H- and D-implanted 4 H SiC (1974) (14)
Halogen surface chemistry on Si(100)−(2×1) (1993) (14)
Electrical and optical properties of erbium-related centers in 6H silicon carbide (2001) (13)
Helium partitioning to extended defects in dual ion bombarded 304 and 316 SS (1981) (13)
STM-assisted nanostructure formation: field-induced excitation and diffusion of precursor molecules (2000) (13)
Enhanced carrier diffusion lengths and photon transport in AlxGa1−x As/GaAs structures (1990) (13)
Oxygen-Related Defect Centers in 4H Silicon Carbide (1997) (13)
The adsorption and thermal decomposition of PH3 on Si(111)-(7 × 7) (1990) (13)
Critical cavity sizes in dual-ion bombarded 304 SS part I: Experiment (1982) (13)
A survey of conduction and valence band edges in SiC (1999) (13)
Surface characterization of SiC mirrors exposed to fast atomic oxygen (1995) (13)
Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices (1995) (13)
Surface polishing by electrochemical etching of p-type 4H SiC (2009) (13)
Influence of surface defects on chlorine chemisorption on Si(100)-(2 × 1) (1997) (12)
Differential Absorption Measurement of Valence Band Splittings in 4H SiC (2000) (11)
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC (2000) (11)
1.54 μm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC (1996) (11)
Multiple Bound Exciton Associated with the Nitrogen Donor in 3C Silicon Carbide (1998) (11)
A Low Pressure Helium Continuous Cloud Chamber (1952) (11)
Free to bound transition-related electroluminescence in 3C and 6H SiC p + -n junctions at room temperature (1996) (11)
Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy (2007) (10)
Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC (1997) (10)
Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC (2004) (10)
Infrared reflectance of AlN–GaN short period superlattice films (1996) (10)
Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals (2005) (10)
PH3 surface chemistry on Si(111)-(7×7) : a study by Auger spectroscopy and electron stimulated desorption methods (1990) (10)
Isotope effects and novel level crossings observed by ODMR in 6H SiC(Ti) (1981) (10)
Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons (2010) (10)
119Sn Mössbauer study of the implantation behaviour of119In,119Sn,119mSn,119Sb and119mTe ions in SiC (1985) (10)
Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001) (2001) (10)
Electronic and atomic structure of the surface (2008) (10)
Cathodoluminescence of AlN–GaN short period superlattices (1996) (10)
Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications (2006) (10)
Impurity Bands and Electroluminescence in SiC p‐n Junctions (1959) (10)
Effect of annealing temperature on 1.5 μm photoluminescence from Er-lmplanted 6H-SiC (1996) (9)
Semitransparent Photocathodes at Low Temperatures (1956) (9)
Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC (2000) (9)
Polarized Edge Emission of SiC (1960) (9)
Scanning tunneling microscope assisted nanostructure formation: Two excitation mechanisms for precursor molecules (1999) (9)
Amorphous SiC film formation on Si(100) using electron beam excitation (1997) (9)
Optical Properties of SiC: 1997–2002 (2004) (8)
Electrical properties of silicon carbide polytypes (1996) (8)
Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla (1997) (8)
Electronic states of chemically treated SiC surfaces (2008) (8)
Ga–CH3 bond scission by atomic H: The depletion of surface carbon from a gallium alkyl film on silicon dioxide (1994) (8)
Chemical Reactions of Chlorine on a Vicinal Si(100) Surface Studied by ESDIAD (1994) (8)
Anti-site pair in SiC: a model of the DI center (2003) (8)
Helium depth profiles in thin metal foils (1976) (7)
Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC (1997) (7)
Optical Properties of Silicon Carbide: Some Recent Developments (1997) (7)
The electron-hole-liquid in 15R-SiC (1978) (7)
Phosphorus-Related Centers in SiC (2004) (7)
Amorphisation and low temperature recrystallisation of InP (1981) (7)
Below‐band‐gap photon recycling in AlxGa1−xAs (1989) (7)
THE ELECTRON-HOLE LIQUID IN A POLAR SEMICONDUCTOR: CUBIC SiC (1979) (7)
Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission (2010) (7)
Phonons in SiC from INS, IXS, and Ab-Initio Calculations (2006) (6)
A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC (2006) (6)
Four Current Examples of Characterization of Silicon Carbide (2002) (6)
Columnar Pore Growth in n-Type 6H SiC (2006) (6)
The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects (2005) (6)
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC (2003) (6)
Optical, Vibrational and Surface Properties of SiC (1987) (6)
Vacancies and their Complexes with H in SiC (2000) (6)
Uniaxial stress effects and excited states for multiple bound excitons (1977) (6)
Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport (2004) (6)
Severe surface spalling and blistering in Mo Single crystals subjected to high fluence He bombardments (1981) (6)
CONTROL OF SILICON CRYSTAL TEMPERATURE BY MEASUREMENT OF RESISTIVITY (1997) (6)
Magneto-Raman scattering from Al acceptors in SiC (1981) (5)
Erratum: An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy [J. Vac. Sci. Technol. B 9, 1924 (1991)] (1992) (5)
A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi (2003) (5)
Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy (1997) (5)
Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC (2005) (5)
Photoluminescence of Cd1−xMnxTe films grown by metalorganic chemical vapor deposition (1989) (5)
Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC (2012) (5)
GaN patterned film synthesis: Carbon depletion by hydrogen atoms produced from NH3 activated by electron impact (1995) (5)
Ground States of the Ionized Isoelectronic Ti Acceptor in SiC (1997) (5)
Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering (2003) (5)
The Effects of Ion Bombardment on the Thin Film Oxidation Behavior of Zircaloy-4 and Zr-1.0 Nb (1974) (5)
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells (2004) (5)
Activation of the Ga-CH3 bond using atomic hydrogen - a possible route to III–V semiconductors films with low carbon levels (1994) (5)
Background effects in electron stimulated desorption ion angular distribution (ESDIAD) measurements on Si(111)-(7 × 7) (1991) (4)
ODMR Studies of AS-Grown and Electron-Irradiated GaN and AlN (1997) (4)
Time Resolved PL Study of Multi Bound Excitons in 3C SiC (1997) (4)
Evolution of cavity size distributions in dual-ion irradiated austenitic stainless steel and Fe-Cr-Ni ternary alloys (1983) (4)
Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport (2005) (4)
New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC (2010) (4)
Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC (2002) (4)
Photoluminescence from carriers confined at an AlxGa1-xAs/GaAs heterojunction interface (1991) (4)
Cavity alignment and precipitation in solution annealed 316 SS during dual ion bombardment (1980) (4)
Triangular Pore Formation in Highly Doped n-Type 4H SiC (2004) (4)
Cathodoluminescence and annealing studies of chemical-vapor-deposited diamond (1993) (4)
Atomic structure of the m-plane AlN/SiC interface (2009) (4)
Defect-Related Luminescence in Molecular Beam Epitaxy Grown CdTe Films* (1986) (4)
Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects (2005) (4)
Optical Lifetime Measurements in 4H SiC (2000) (4)
Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps (2008) (4)
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers (2003) (3)
Laser spin-flip scattering from excitons in SiC (1980) (3)
Magneto-Optical Measurements on H-Implanted 6H SiC (1974) (3)
Nickel-induced defects and their role in governing chlorine chemistry on the Si(100) surface (1997) (3)
Sublimation Vapor Transport Growth of Silicon Carbide (1992) (3)
Interference Fringes in the Infrared Reflectance of 6H-SiC Films on 6H-SiC Substrates (1992) (3)
Brillouin Spectra of Porous p-Type 6H-SiC (2006) (3)
Microstructural development in dual-ion-bombarded 316 stainless steel (1981) (3)
Fabry-Perot cavity oscillations of an Al(x)Ga(1-x)As photoluminescence spectrum. (1990) (3)
Luminescence centers in H- and D-implanted 6 H SiC (1974) (3)
Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC (1992) (3)
Experimental evidence for slight mass dependence of the final damage state due to energetic ions (1982) (3)
Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers (2010) (3)
A comparison of the annealing of spectral features in plasma-deposited polycrystalline diamond films and natural diamond (1991) (3)
Surface Modification of Sic by Ion Implantation (1985) (3)
Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study (2005) (2)
New Evidence for the Second Conduction Band in 4H SiC (2016) (2)
Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC (2010) (2)
Momentum transfer and damage energy gradient effects on helium distributions in type 304 stainless steel (1978) (2)
Production of Atomic Hydrogen and Its Use for the Growth of GaN with Low Carbon Level (1997) (2)
Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC (1993) (2)
Band structure properties, phonons, and exciton fine structure in 4H -SiC measured by wavelength-modulated absorption and low-temperature photoluminescence (2020) (2)
Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC) (1993) (2)
Implantation rate effects on microstructure (1981) (2)
Thermal disorder in adsorbed Cl on Si(100) (1993) (2)
Nanowire Reconstruction on the 4H-SiC(1102) Surface (2007) (2)
Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves. (1986) (2)
Brillouin Scattering Studies of Surface Acoustic Waves in SiC (2004) (2)
Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films (2007) (2)
Silicon adatom chains and one-dimensionally confined electrons on 4H-SiC(1-102): The (2x1) reconstruction (2008) (2)
High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC (2018) (2)
Electrical Activity of Isolated Oxygen Defects in SiC (2001) (2)
Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001) (2001) (2)
Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC (2007) (2)
Review of optical work in SiC since 1968 (1974) (2)
Amorphization and Annealing of 6H SiC Implanted with N-Type, P-Type or Isovalent Dopants (1989) (2)
Neutral aluminum and gallium four particle complexes in silicon carbide polytypes (1999) (2)
Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy (2001) (1)
Photoluminescence, Raman Scattering and Rbs/Channeling of Epitaxial Fluorides (1985) (1)
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC (2004) (1)
Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model (1992) (1)
Porous Structure of Anodized p-Type 6H SiC (2004) (1)
A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers (2006) (1)
Multiple layer spalling in single‐crystal Al during He ion implantation (1981) (1)
Laser‐monitored electrothinner for preparation of ultrathin metal foils (1977) (1)
Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering (2010) (1)
Silicon Carbide: A Playground for 1D-Modulation Electronics (2006) (1)
Comparison of Dilutely Doped p-Type 6H-SiC from a Variety of Sources (1992) (1)
Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution? (2006) (1)
Electrochemical Polishing of p-Type 4H SiC (2009) (1)
Schottky barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000(1)over-bar), (1(1)over-bar-00) and (1(2)over-bar-10) faces measured by I-V, C-V and internal photoemission (2002) (1)
Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC (2019) (1)
Identification of {2\overline{1}\overline{1}0} and {10\overline{1}0} Laue patterns of hexagonal and rhombohedral silicon carbide polytypes (1994) (1)
Cathodolnminescence and annealing study of plasma-deposited polycrystalline diamond films (1990) (1)
Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC (2006) (1)
Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy (2012) (1)
Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces (2008) (1)
SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2) (2006) (1)
Study of Diffusion Length and Alloy Segregation in MOCVD AlGaAs (1987) (1)
TWO DEFECT-RELATED PHOTOLUMINESCENCE SPECTRA AND CROSS-SECTION TEM OF MBE GROWN CdTe ON (100) InSb (1985) (1)
ESDIAD Study of Step Site Bonding on a Vicinal Si(100) Surface Upon Cl2 Adsorption (1994) (1)
Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC (2012) (1)
Photoluminescence Study of C-H and C-D Centers in 4H SiC (2004) (0)
Control of the Surface Reactivity of the Si(100) Surface. (1986) (0)
OPTIMAL PROPERTIES AND ELECTRONIC STRUCTURE OF METALS AND SEMI-METALS. (1970) (0)
Sub-micron calibration for ion beam milling of thin films (1984) (0)
Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence (2014) (0)
SiC pore surfaces: Surface studies of 4H-SiC(1(1)over-bar02) and 4H-SiC(1(1)over-bar02) (2006) (0)
Combined RBS, SEM and TEM studies of hydrogen and helium effects in silicon (2020) (0)
1 Porous SiC Preparation , Characterization and Morphology (2008) (0)
Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC (2004) (0)
Indium Interdiffusion in CdTe/InSb Heterostructures Studied by Optical and Surface Analytical Techniques (1994) (0)
Investigation of Ion Energy Deposition in Solids (1982) (0)
Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition (2008) (0)
Combined Optical, Structural and Theoretical Assessment of MOCVD Grown Multiple GaAs Quantum Wells (1993) (0)
Research on Silicon, Carbon, and Silicon Carbide Heterostructures (1990) (0)
Momentum transfer and damage energy gradient effects on helium permeability (1977) (0)
Porous SiC Preparation, Characterization and Morphology (2008) (0)
Issues with Deep Defect Spectra in Electron Irradiated 4H SiC (2009) (0)
Fundamental Aspects of SiC (2013) (0)
Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si (1989) (0)
Characterization of defect structures in MBE-grown (001) CdTe films by TEM and low-temperature photoluminescence (2020) (0)
Surface science lettersThe dissociative adsorption of ammonia on Si(100) (1989) (0)
Charged particle simulation of fast neutron damage (1981) (0)
CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates (2006) (0)
Improved Gallium Nitride and Aluminum Nitride Electronic Materials (1992) (0)
Charged particle simulation of fast neutron damage. Final report 1 Jan 76-31 Oct 81 (1981) (0)
A note on obtaining symmetrical angular yield curves in MeV ion channeling (1987) (0)
OPTICAL PROPERTIES OF 4H, 6H, 15R, 21R, CUBIC SiC (1969) (0)
SiC Production Chemistry from Olefinic Hydrocarbons on Si(100) (1989) (0)
Biocompatible Sol–Gel Based Nanostructured Hydroxyapatite Coatings on Nano-porous SiC (2012) (0)
A Comparative Study of Near-Surface Effects Due to Very High Fluence H+ Implantation In Single Crystal FZ, CZ, and Web SI (1983) (0)
A Rotating Attenuator for Concentration Profiling of Implanted Helium Ions (1983) (0)
Microstructure of Porous SiC Produced by Photoelectrochemical Etching (2003) (0)
Atomic Hydrogen - A Reagent for the Extraction of Chemical Species from Silicon Surfaces (1992) (0)
Background Effects in ESDIAD Measurements on Si(111)-(7x7) (1990) (0)
Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor (2011) (0)
Direct Images of Thermal Disorder in the Cl-Si and H-O-Si Chemisorption Bond on Si(100) (1993) (0)
Nanoporous SiC as a Semi‐Permeable Biomembrane for Medical Use: Practical and Theoretical Considerations (2008) (0)
Epr studies of SIC/SIO2 interfaces in N-type 4H- and 6H- oxidized porous SIC (2003) (0)
Irradiation response of materials. Final Quarterly technical progress report (1979) (0)
Primary recoil energy spectra considerations in ion-bombardment experiments (1977) (0)
Spin-Flip Scattering from Photoexcited Excitons in SiC (1979) (0)
Comparison of Experimental Laue Transmission and Reflection Patterns for 4H, 6H, 15R, and 3C SiC (1992) (0)
Effects of oxygen level and distribution on near-surface phenomena in hydrogen implanted single crystal FZ, CZ, and web silicon (1985) (0)
Optic and Electronic Properties of Large Band Gap Semiconductors Doped by Ion Implantation. (1974) (0)
Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC (2005) (0)
Investigation of ion energy deposition in solids. Final report 7 Jul 81-30 Jun 82 (1982) (0)
Plasma Deposition of Silicon Carbide Thin Films. (1987) (0)
I. The average energy loss per ion path in helium and neon ; II. A low-pressure helium diffusion chamber and the beta spectrum of Cd¹¹³ / (1952) (0)
Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates (2007) (0)
A Technique for Implanting Dopant Distributions in Solids (1983) (0)
Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia (2003) (0)
A combination vacuum furnace‐sample chamber for ion implantation (1974) (0)
A modified sputter target for the generation of negative ions from rare isotopes (1982) (0)
Photoluminescence and Transmision Electron Microscopy of Defects in SiC Grown on Si (1991) (0)
Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons (2010) (0)
Dopant-related Complexes in SiC (2000) (0)
Defect Formation and Hydrogen Trapping in H + Implanted FZ Silicon (1984) (0)
Implanted hydrogen effects at high concentrations in model low Z shielding materials (1984) (0)
Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission (2002) (0)
Indium phosphide for high frequency power transistors (1979) (0)
Step Arrays on Vicinal SiC Formed by Hydrogen-Etching (2007) (0)
High Energy Ion Bombardment Simulation Facility at the University of Pittsburgh (1975) (0)
N Thermal Stability of the Carbon-Carbon Bond in Ethylene Adsorbed on Si ( 100 ) : An Isotopic Mixing Study 0 by (0)
Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C (2011) (0)

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