Won‐tien Tsang

Won‐tien Tsang's AcademicInfluence.com Rankings

Won‐tien Tsang

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Physics

Won‐tien Tsang's Degrees

PhD Physics University of California, Berkeley
Bachelors Physics University of California, Berkeley

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Won‐tien Tsang's Published Works

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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures (1982) (338)
Observation of the excited level of excitons in GaAs quantum wells (1981) (307)
Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio (1982) (296)
Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy (1982) (267)
High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers (1983) (234)
Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy (1981) (231)
Chemical beam epitaxy of InP and GaAs (1984) (211)
Extrinsic photoluminescence from GaAs quantum wells (1982) (185)
A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam (1981) (159)
A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy (1988) (146)
Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy (1986) (143)
Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition (1977) (134)
Capture of electrons and holes in quantum wells (1988) (133)
Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As (1987) (122)
Auger recombination in bulk and quantum well InGaAs (1990) (119)
Subpicosecond pulses from passively mode‐locked GaAs buried optical guide semiconductor lasers (1981) (117)
The effects of lateral current spreading, carrier out‐diffusion, and optical mode losses on the threshold current density of GaAs‐AlχGa1−χAs stripe‐geometry DH lasers (1978) (107)
Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K (1987) (101)
Extrinsic layer at AlxGa1−xAs‐GaAs interfaces (1982) (90)
Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy (1979) (86)
Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes (1989) (83)
Progress in chemical beam epitaxy (1990) (81)
Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy (1979) (81)
Delta-doped ohmic contacts to n-GaAs (1986) (77)
Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrations n2DEG≥1.5×1012 cm−2 for field‐effect transistors (1987) (76)
The graded bandgap multilayer avalanche photodiode: A new low-noise detector (1982) (75)
dc analysis of parallel arrays of two and three Josephson junctions (1975) (73)
The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy (1980) (72)
Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy (1987) (72)
Integrated multilayer GaAs lasers separated by tunnel junctions (1982) (71)
Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy (1987) (67)
Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes (1989) (66)
Growth characteristics of GaAs‐Ga1−xAlxAs structures fabricated by liquid‐phase epitaxy over preferentially etched channels (1976) (64)
Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers (1986) (64)
Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks (1977) (62)
Long-wavelength InGaAsP/InP distributed feedback lasers incorporating gain-coupled mechanism (1992) (61)
High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy (1988) (60)
Molecular beam epitaxial writing of patterned GaAs epilayer structures (1978) (60)
From chemical vapor epitaxy to chemical beam epitaxy (1989) (60)
Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices (1987) (60)
The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers (1978) (59)
Gain and carrier lifetime measurements in AlGaAs single quantum well lasers (1983) (59)
Perpendicular electronic transport in doping superlattices (1987) (59)
Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers (1982) (59)
Preferentially etched diffraction gratings in silicon (1975) (59)
Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range (1987) (58)
GaAs‐Ga1‐xAlxAs double‐heterostructure injection lasers with distributed Bragg reflectors (1976) (56)
Molecular beam epitaxial growth of In1−xGaxAs1−ySby lattice matched to GaSb (1985) (56)
GaAs-Al x Ga 1-x As strip buried heterostructure lasers (1979) (55)
New graded band‐gap picosecond phototransistor (1983) (54)
The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkyls (1986) (54)
Photoluminescence study of acceptors in AlxGa1−xAs (1982) (54)
High-Power Fundamental-Transverse-Mode Strip Buried Heterostructure Lasers with Linear Light-Current Characteristics (1978) (54)
Pulsations and absorbing defects in (Al,Ga)As injection lasers (1979) (53)
Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy (1982) (53)
Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy (1980) (52)
Heterostructure semiconductor lasers prepared by molecular beam epitaxy (1984) (52)
Growth of high‐quality GaxIn1−xAsyP1−y by chemical beam epitaxy (1987) (52)
Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy (1986) (51)
Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy (1991) (51)
Observation of optical Stark effect in InGaAs/InP multiple quantum wells (1987) (51)
Effect of growth temperature on the photoluminescent spectra from Sn‐doped Ga1−xAlxAs grown by molecular beam epitaxy (1981) (51)
Chemical beam epitaxial growth of extremely high quality InGaAs on InP (1986) (50)
Lattice‐mismatch‐generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy (1989) (49)
Determination of the atomic configuration at semiconductor interfaces (1987) (49)
Self‐terminating thermal oxidation of AlAs epilayers grown on GaAs by molecular beam epitaxy (1978) (47)
Molecular beam epitaxy of GaSb0.5As0.5 and AlxGa1−xSbyAs1−y lattice matched to InP (1985) (46)
Chemical beam epitaxy of InGaAs (1985) (46)
Bound excitons in p-doped GaAs quantum wells (1982) (46)
Advances in MOVPE, MBE, and CBE (1992) (46)
High quality InP grown by molecular beam epitaxy (1982) (45)
High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy (1991) (45)
Monolithic InP 100-Channel $\times$ 10-GHz Device for Optical Arbitrary Waveform Generation (2011) (45)
Optical measurement of surface recombination in InGaAs quantum well mesa structures (1988) (45)
Semiconductor laser physics (1982) (45)
Two‐dimensional hole gas at a semiconductor heterojunction interface (1980) (44)
Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-μm, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirp (1996) (43)
Carrier induced refractive index change in AlGaAs quantum well lasers (1984) (42)
Optical gain and loss processes in GaInAs/InP MQW laser structures (1989) (42)
Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time‐resolved optical picosecond reflectivity (1982) (41)
Selectively δ‐doped quantum well transistor grown by gas‐source molecular‐beam epitaxy (1988) (41)
Al0.48In0.52 As/Ga0.47In0.53 As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm (1981) (41)
Monolayer chemical beam etching: Reverse molecular beam epitaxy (1993) (40)
Wavelength selective interlayer directionally grating‐coupled InP/InGaAsP waveguide photodetection (1987) (40)
Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback (1992) (40)
Simultaneous exposure and development technique for making gratings on positive photoresist (1974) (39)
Self‐aligned enhancement‐mode and depletion‐mode GaAs field‐effect transistors employing the δ‐doping technique (1986) (39)
Stable single-longitudinal-mode operation under high-speed direct modulation in cleaved-coupled-cavity GaInAsP semiconductor lasers (1983) (38)
Chemical Beam Epitaxy and Related Techniques (1997) (38)
Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm (1984) (38)
New transitions in the photoluminescence of GaAs quantum wells (1981) (38)
Modulation bandwidth enhancement and nonlinear distortion suppression in directly modulated monolithic injection-locked DFB lasers (2003) (37)
The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially‐grown Sn‐doped AlxGa1−xAs (1981) (37)
InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain‐bandwidth product (1987) (36)
Elimination of oval defects in epilayers by using chemical beam epitaxy (1985) (36)
Chemical beam epitaxial growth of high‐purity GaAs using triethylgallium and arsine (1987) (36)
High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxy (1990) (36)
The effect of substrate growth temperature on deep levels in n‐AlxGa1−xAs grown by molecular beam epitaxy (1981) (36)
1.55‐μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers (1985) (36)
Transport in double‐barrier resonant tunneling structures (1987) (35)
Doping studies using thermal beams in chemical‐beam epitaxy (1986) (35)
In situ Ohmic‐contact formation to n‐ and p‐GaAs by molecular beam epitaxy (1978) (35)
Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichloride (1993) (34)
A densely packed monolithic linear array of GaAs‐AlxGa1−xAs strip buried heterostructure laser (1979) (34)
Band lineups at the GaSb-AlxGa1―xSb hetero-junction: experimental evidence for a new common anion rule (1987) (34)
1.5 μm wavelength GaInAsP C3 lasers: single-frequency operation and wideband frequency tuning (1983) (34)
Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy (1990) (34)
1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy (1982) (33)
Profile and groove‐depth control in GaAs diffraction gratings fabricated by preferential chemical etching in H2SO4‐H2O2‐H2O system (1976) (33)
Delta-doped avalanche photodiodes for high bit-rate lightwave receivers (1991) (33)
Al‐Ga disorder in AlxGa1−xAs alloys grown by molecular beam epitaxy (1981) (33)
Device characteristics of (AlGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxy (1981) (32)
MICROWAVE INTENSITY AND FREQUENCY MODULATION OF HETEROEPITAXIAL-RIDGE-OVERGROWN DISTRIBUTED FEEDBACK LASERS. (1985) (32)
InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE (1992) (32)
Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wells (1987) (31)
Time‐resolved measurements of tunneling between double quantum wells in In0.53Ga0.47As/InP (1989) (31)
An optical switching and routing system using frequency tunable cleaved-coupled-cavity semiconductor lasers (1984) (31)
Preparation of 1.78‐μm wavelength Al0.2Ga0.8Sb/GaSb double‐heterostructure lasers by molecular beam epitaxy (1983) (31)
Chemical beam epitaxy (1988) (31)
Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy (1990) (30)
Optical waveguides fabricated by preferential etching. (1975) (30)
Pulsating output of separate confinement buried optical guide lasers due to the deliberate introduction of saturable loss (1981) (30)
Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength (1987) (30)
Single-frequency semiconductor lasers? (1986) (29)
Measurement of high electron drift velocity in a submicron, heavily doped graded gap AlxGa1−xAs layer (1983) (29)
Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser (2006) (29)
Control of lasing wavelength in distributed feedback lasers by angling the active stripe with respect to the grating (1993) (29)
Reflection high‐energy electron diffraction studies on the molecular‐beam‐epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb (1985) (29)
Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3 (1990) (29)
High-speed waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (MQWs) (1987) (28)
Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy (1991) (27)
Chapter 5 The Cleaved-Couple-Cavity (C3) Laser (1985) (27)
Multidielectrics for GaAs MIS devices using composition‐graded AlxGa1−xAs and oxidized AlAs (1979) (27)
A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material (1991) (27)
Symmetric separate confinement heterostructure lasers with low threshold and narrow beam divergence by m.b.e. (1980) (26)
Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy (1980) (26)
High‐field transport in an InGaAs‐InP superlattice grown by chemical beam epitaxy (1988) (26)
Very high quality single and multiple GaAs quantum wells grown by chemical beam epitaxy (1986) (25)
Low‐current‐threshold strip‐buried‐heterostructure lasers with self‐aligned current injection stripes (1979) (25)
A review of CBE, MOMBE and GSMBE (1991) (25)
Monolithically integrated InP wafer-scale 100-channel × 10-GHz AWG and Michelson interferometers for 1-THz-bandwidth optical arbitrary waveform generation (2010) (25)
Zinc-doping of InP during chemical beam epitaxy using diethylzinc (1991) (25)
cw narrow beam (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy (1981) (25)
Iron‐doped semi‐insulating InP grown by chemical beam epitaxy (1989) (25)
GaAs‐AlxGa1−xAs strip‐buried‐heterostructure lasers with lateral‐evanescent‐field distributed feedback (1979) (24)
Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies (1987) (24)
Tunneling in In0.53Ga0.47As‐InP double‐barrier structures (1987) (23)
Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers (1986) (23)
Shallow donors in very pure GaAs grown by gas source molecular beam epitaxy (1988) (23)
Strained-layer 1.5 mu m wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxy (1990) (23)
Optoelectronic logic operations by cleaved-coupled-cavity semiconductor lasers (1983) (23)
Bit-error-rate saturation due to mode-partition noise induced by optical feedback in 1.5-µm single longitudinal-mode C 3 and DFB semiconductor lasers (1985) (22)
1.55‐μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wells (1987) (22)
High‐through‐put, high‐yield, and highly‐reproducible (AlGa)As double‐heterostructure laser wafers grown by molecular beam epitaxy (1981) (22)
Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxy (1985) (22)
Broad-band tunable electroabsorption modulated laser for WDM application (1997) (21)
Single‐longitudinal mode performance characteristics of cleaved‐coupled‐cavity lasers (1983) (21)
Chapter 7 Quantum Confinement Heterostructure Semiconductor Lasers (1987) (21)
Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy (1986) (21)
Spectral bistability in coupled cavity semiconductor lasers (1984) (21)
Ga 0.47 In 0.53 As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy (1987) (21)
The high‐temperature (55–70 °C) device characteristics of cw (AlGa)As double‐heterostructure proton‐bombarded stripe lasers grown by molecular beam epitaxy (1981) (20)
Spin-dependent recombination in GaAs (1980) (20)
Miniband conduction of minority electrons and negative transconductance by quantum reflection in a superlattice transistor (1990) (20)
Lateral-current confinement in a GaAs planar stripe-geometry and channeled substrate buried DH laser using reverse-biased p-n junctions (1978) (20)
Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb (1986) (20)
GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement (1980) (20)
Enhanced frequency modulation in cleaved‐coupled‐cavity semiconductor lasers with reduced spurious intensity modulation (1983) (20)
New current injection 1.5‐μm wavelength GaxAlyIn1−x−yAs/InP double‐heterostructure laser grown by molecular beam epitaxy (1983) (20)
Channeling photodiode: A new versatile interdigitated p‐n junction photodetector (1982) (19)
Molecular beam deposition of high quality silicon oxide dielectric films (1995) (19)
Molecular beam epitaxial growth of high‐purity AlGaAs (1987) (19)
A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy (1981) (18)
Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature (1985) (18)
Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy (1986) (18)
GaInAsP/InP double heterostructure lasers emitting at 1.5 μm grown by chemical beam epitaxy (1987) (17)
Measurement of heterojunction band offsets in InP/Ga0.47In0.53As by admittance spectroscopy (1987) (17)
Current status review and future prospects of CBE, MOMBE and GSMBE (1991) (17)
Optical injection-locked gain-lever distributed Bragg reflector lasers with enhanced RF performance (2004) (17)
InGaAs/InGaAsP Integrated Tunable Detector Grown By Chemical Beam Epitaxy (1992) (17)
Optically pumped GaSb/Al0.6Ga0.4Sb multiquantum well lasers operating in the λ=1.5–1.6 μm region (1984) (17)
Alignment-relaxed 1.55 mu m multiquantum well lasers fabricated using standard buried heterostructure laser processes (1995) (16)
Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular‐beam epitaxy (1986) (16)
The cw electro‐optical properties of (Al,Ga)As modified‐strip buried‐heterostructure lasers (1980) (16)
Heteroepitaxial ridge‐overgrown distributed feedback laser at 1.5 μm (1984) (16)
Extension of lasing wavelengths beyond 0.87 μm in GaAs/AlxGa1−xAs double‐heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy (1981) (16)
cw multiwavelength transverse‐junction‐stripe lasers grown by molecular beam epitaxy operating predominantly in single‐longitudinal modes (1980) (16)
Optically pumped laser oscillation at 3.82 μm from InAs1−xSbx grown by molecular beam epitaxy on GaSb (1985) (15)
GaAs/AlGaAs quantum wells and double-heterostructure lasers grown by chemical beam epitaxy (1986) (15)
Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices (1990) (15)
A new current‐injection heterostructure laser: The double‐barrier double‐heterostructure laser (1981) (15)
GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 A) grown by chemica (1988) (15)
Spectral dependence of propagation loss in InP/InGaAsP antiresonant reflecting optical waveguides grown by chemical beam epitaxy (1987) (15)
A thin-film prism as a beam separator for multimode guided waves in integrated optics (1975) (15)
In-situ dry etching of InP using phosphorus trichloride and regrowth inside a chemical beam epitaxial growth chamber (1994) (15)
Spectral phase encoded time spread optical code division multiple access technology for next generation communication networks [Invited] (2007) (15)
Optically integrated coherently coupled AlxGa1−xAs lasers (1983) (15)
Dependence of the conduction in In0.53Ga0.47As‐InP double‐barrier tunneling structures on the mesa‐etching process (1987) (15)
Theoretical modeling of the simultaneous exposure and development (SED) process of a positive photoresist. (1977) (14)
Interdigitated pn junction device with novel capacitance/voltage characteristic, ultralow capacitance and low punch-through voltage (1982) (14)
Long-wavelength InGaAsP/InP multiquantum well distributed feedback and distributed Bragg reflector lasers grown by chemical beam epitaxy (1994) (14)
All‐gaseous doping during chemical‐beam epitaxial growth of InGaAs/InGaAsP multi‐quantum‐well lasers (1991) (14)
Room temperature photopumped 1.5-μm quantum well surface-emitting lasers with InGaAs/P/InP distributed Bragg reflectors (1991) (14)
Thin‐film beam splitter and reflector for optical guided waves (1975) (14)
Mode properties of GaAs‐Ga1−xAlxAs heterostructure inverted‐ridge optical waveguides (1976) (13)
cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy (1980) (13)
Temperature and excitation dependences of active layer photoluminescence in (Al,Ga)As laser heterostructures (1983) (13)
Transport through InGaAs‐InP superlattices grown by chemical beam epitaxy (1989) (13)
InGaAs/InP p‐i‐n photodiodes grown by chemical beam epitaxy (1986) (13)
Growth of device quality GaAs by chemical beam epitaxy (1988) (13)
Negative transconductance superlattice base bipolar transistor (1989) (13)
The preparation of GaAs thin‐film optical components by molecular beam epitaxy using Si shadow masking technique (1979) (13)
Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstration (1992) (13)
Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion (1994) (13)
Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy (1992) (12)
The effect of growth temperature instability in the CBE growth of InxGa1-xAsyP1-y/InP multiple quantum well structures (1992) (12)
The heteroepitaxial ridge-overgrown distributed feedback laser (1985) (12)
Reduced threshold current temperature dependence in double heterostructure lasers due to separate p-n and heterojunctions (1983) (12)
Channeled‐substrate‐planar‐structure semiconductor lasers with lateral‐evanescent‐field distributed feedback (1979) (12)
High-reliability 1.3-/spl mu/m InP-based uncooled lasers in nonhermetic packages (1996) (12)
cw electro‐optical characteristics of graded‐index waveguide separate‐confinement heterostructure lasers with proton‐delineated stripe (1983) (12)
Room‐temperature optically pumped laser oscillation at 2.07 μm from Ga0.85In0.15As0.13Sb0.87/ Al0.4Ga0.6As0.035Sb0.965 double heterostructures grown by molecular‐beam epitaxy on GaSb substrates (1986) (12)
Wavelength uniformity of 1.3 mu m GaInAsP/InP distributed Bragg reflector lasers with hybrid beam/vapour epitaxial growth (1988) (12)
Optical investigation of quantum‐well fluctuations in In0.53Ga0.47As/InP superlattices (1987) (12)
Chemical Beam Epitaxy of GalnP on GaAs(l 00) Substrates and its Application to 0.98/spl mu/m Lasers (1992) (12)
Very high purity GaAs grown by gas source molecular beam epitaxy (1989) (11)
1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy (1991) (11)
Anisotropically etched deep gratings for InP/InGaAsP optical devices (1987) (11)
Well width dependence of the carrier life time in InGaAs/InP quantum wells (1989) (11)
Optical generation of millimeter-waves using monolithic sideband injection locking of a two-section DFB laser (2003) (11)
The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy (1981) (11)
Stress free and moisture insensitive silicon oxide dielectric films formed by molecular‐beam deposition (1995) (11)
Transient single‐longitudinal mode stabilization in double active layer GaInAsP/InP laser under high‐bit rate modulation (1983) (10)
Lateral current confinement by reverse‐biased junctions in GaAs‐AlxGa1−xAs DH lasers (1977) (10)
GaInAs metal/semiconductor/metal photodetectors with Fe:InP barrier layers grown by chemical beam epitaxy (1989) (10)
Mode‐locked semiconductor lasers with gateable output and electrically controllable optical absorber (1983) (10)
Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy (1981) (10)
A new high‐power, narrow‐beam transverse‐mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge‐overgrown laser (1984) (10)
Transient effects in external cavity semiconductor lasers (1983) (10)
Integrated coherent transceivers for broad-band access networks (1997) (10)
High-transconductance heterostructure Ga/sub 0.47/In/sub 0.53/As/InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy (1988) (10)
InP/InGaAsP/InGaAs SAGM avalanche photodiode with delta-doped multiplication region (1991) (10)
Surface cleaning of GaAs by in situ chemical beam etching (1994) (9)
Monolayer chemical beam etching (1994) (9)
High performance Ga0.47In0.53As photoconductive detectors grown by chemical beam epitaxy (1986) (9)
Modelling of chemical beam epitaxy (1989) (9)
Demonstration of multilevel multichannel optical frequency shift keying (FSK) with cleaved-coupled-cavity (C3) semiconductor lasers (1983) (9)
Low‐threshold and high‐temperature operation of 1.55‐μm self‐aligned ridge‐waveguide multiple‐quantum‐well lasers grown by chemical‐beam epitaxy (1991) (9)
The characterization and functional reliability of 45 Mbit/s optical transmitters containing MBE-grown lasers (1983) (9)
Control of lasing wavelength in distributed feedback lasers by angling the active stripe with respect to the grating (1993) (9)
Microfabrication of two‐dimensional periodic arrays by laser beam interferometric technique (1975) (9)
Strip buried heterostructure lasers with passive distributed Bragg reflectors (1979) (9)
Development of self-pulsations due to self-annealing of proton bombarded regions during aging in proton bombarded stripe-geometry AlGaAs DH lasers grown by molecular beam epitaxy (1980) (9)
(AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth (1982) (9)
Selective-area epitaxy and etching by chemical beam epitaxy (1993) (8)
1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures (1988) (8)
Molecular-beam epitaxially grown 1.3 μm GaInAsP/InP double-heterostructure lasers (1982) (8)
Doping in semiconductors with variable activation energy (1992) (8)
Multiwavelength laser array by chemical beam epitaxy on patterned InP substrates (1993) (8)
Semiconductors and semimetals (1985) (8)
Influence of the current‐phase relation on the critical‐current‐applied‐magnetic‐flux dependence in parallel‐connected Josephson junctions (1976) (8)
Optical detection of interwell‐exciton transfer in In0.53Ga0.47As/InP quantum wells grown by chemical beam epitaxy (1987) (8)
Analysis of ring distributed‐feedback lasers (1974) (8)
Electronic properties of In0.53Ga0.47As‐InP single quantum wells grown by chemical beam epitaxy (1987) (8)
The occurrence of cross hatch during GaAs homoepitaxy (1986) (8)
GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattice lattice matched to InP prepared by molecular beam epitaxy (1985) (7)
Growth of bright (300 K) luminescence InAsxP1−x (λ=1.7–2.1 μ) on InP substrates by molecular beam epitaxy (1984) (7)
Grating masks suitable for ion-beam machining and chemical etching (1974) (7)
WDM channel monitoring and signal power control/equalization using integrated tunable active filters (1997) (7)
New photoconductive gain mechanism by electric field modulation in multiquantum‐well heterostructures (1989) (7)
The preparation of materials for optoelectronic applications by molecular beam epitaxy (1984) (7)
Light scattering determination of band offsets in GaAs(AlGa)As and GaSb(AlGa)Sb quantum wells: A comparative study (1987) (7)
Threshold‐wavelength and threshold‐temperature dependences of GaInAsP/InP lasers with frequency selective feedback operating in the 1.3‐ and 1.5‐μm regions (1983) (7)
Semiconductor Lasers and Photodetectors (1985) (7)
XFROG characterization of a 10 GHz colliding-pulse mode-locked laser (2006) (7)
Large-signal analog modulation response of monolithic optical injection-locked DFB lasers (2005) (7)
Stripe-geometry laser with in-situ ohmic contact and self-aligned native surface oxide mask for current isolation prepared by molecular beam epitaxy (1982) (7)
The superlattice photodetector: A new avalanche photodiode with a large ionization rates ratio (1981) (7)
The C3 Laser (1984) (6)
Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam (1983) (6)
Tapered edge ridge waveguides for integrated optics. (1975) (6)
Electron transport of (Al,Ga)Sb/InAs heterojunctions prepared by molecular beam epitaxy (1987) (6)
Very low threshold 1.55 μm grating coupled surface‐emitting lasers for optical signal processing and interconnect (1995) (6)
High-speed integrated electroabsorption modulators (1997) (6)
Electrical control optical delay lines made of y-junction SOA switches (1998) (6)
10-Gbit/s transmission using an integrated electroabsorption-modulator/DFB laser grown by selective-area epitaxy (1995) (6)
A novel monolithically integrated Mach-Zehnder wavelength converter using cross modulation in electro-absorber (2005) (6)
Very high sidemode-suppression-ratio distributed-Bragg-reflector lasers grown by chemical beam epitaxy (1992) (6)
Optical gain in strain-free and strained layer GaxIn1-xAs/InP superlattices (1989) (5)
New large optical cavity laser with distributed active layers (1983) (5)
InP/InGaAsP/InGaAs avalanche photodiodes with 70-GHz gainbandwidth product grown by chemical beam epitaxy (1988) (5)
Elimination of light scattering from grating irregularities by using a quantum well grating in index or gain-coupled distributed feedback lasers (1993) (5)
Active spectral stabilization of cleaved-coupled-cavity (C3) lasers (1984) (5)
Superlattice, graded band gap, channeling and staircase avalanche photodiodes towards a solid-state photomultiplier (1982) (5)
Summary Abstract: High purity molecular beam epitaxy grown AlGaAs (1987) (5)
Wideband frequency-shift keying with a spectrally bistable cleaved-coupled-cavity semiconductor laser (1983) (5)
Quantum‐switched heterojunction bipolar transistor (1989) (5)
Chapter 2 Molecular Beam Epitaxy for III–V Compound Semiconductors (1985) (5)
A thin−film ring distributed−feedback laser (1975) (4)
GaAsGa1−xAlxAs double-heterostructure injection lasers with distributed bragg reflectors☆ (1976) (4)
Delta-Doped Sagm-Avalanche Photodiodes (1991) (4)
Selfaligned InGaAs/InP heterostructure bipolar transistors (1991) (4)
Zinc doping of Ga0.51In0.49P grown on GaAs(100) substrates by chemical beam epitaxy (1993) (4)
Long wavelength InGaAsP/InP distributed feedback lasers grown by chemical beam epitaxy (1992) (4)
Recent progress in growing reliable (AlGa)As DH lasers by molecular beam epitaxy for optical communication systems (1982) (4)
1.5 μm wavelength InGaAs/InGaAsP distributed feedback multi‐quantum‐well lasers grown by chemical beam epitaxy (1991) (4)
A new lateral selective‐area growth by liquid‐phase epitaxy: The formation of a lateral double‐barrier buried‐heterostructure laser (1982) (4)
Quantum‐switched heterojunction bistable bipolar transistor by chemical beam epitaxy (1990) (4)
Carbon-doped InGaP/GaAs/InGaP Double Heterojunction Bipolar Transistors (1992) (4)
Integrated electroabsorption modulators for WDM systems (1995) (4)
Wavelength selective interlayer directionally grating-coupled InP/InGaAsP waveguide photodetection (1988) (4)
Demonstration of monolithic optical injection locking using a two section DFB laser (2003) (4)
Misfit stress‐induced compositional instability in hetero‐epitaxial compound semiconductor structures (1996) (4)
Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As (1989) (4)
10 GHz colliding pulse mode locked laser with electrical and optical injection synchronization (2005) (4)
Gigahertz bit rate analog to digital conversion with optical outputs using cleaved‐coupled‐cavity semiconductor lasers (1983) (4)
Quantum well lasers in telecommunications (1992) (3)
Wavelength division multiplexed (WDM) data-block switching for parallel computing and interconnects (1998) (3)
Enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors grown by chemical beam epitaxy (1986) (3)
Resonant tunneling in InGaAsInP double-barrier structures and superlattices (1988) (3)
Summary Abstract: Molecular beam epitaxial growth of abrupt InAsSb/GaSb heterostructures and superlattices lattice‐matched to GaSb(100) (1986) (3)
Application of gratings in fabricating arrays of superconducting and normal junctions (1974) (3)
Photoluminescence and photoluminescence excitation study of electron-hole tunneling in In0.53Ga0.47As/InP coupled-single quantum wells (1988) (3)
Multichannel operating characteristics of integrated coherent receivers for optical access networks (1997) (3)
Multilongitudinal mode operation in angled stripe buried heterostructure lasers (1983) (3)
Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy (1981) (3)
InAs x P 1-x /InP photodiodes prepared by molecular-beam epitaxy (1984) (3)
Output Coupling Induced Wavelength Shifts in Erbium-Doped Fiber Lasers (1993) (3)
High-speed integrated DFB/electroabsorption modulated lasers (1996) (3)
Monolayer control of chemical beam etching (1994) (3)
Integrated laser/modulators for high capacity WDM transmission systems (1995) (3)
Material growth technologies (1985) (3)
High performance integrated coherent transceivers for optical access networks (1996) (2)
Semiconductor injection lasers, II, light-emitting diodes (1985) (2)
A very simple integrated coherent receiver with record high sensitivity (1996) (2)
Semi‐insulating InP grown by chemical beam epitaxy with pentacarbonyliron doping (1995) (2)
High reliability 1.3 /spl mu/m InP based uncooled lasers in non-hermetic packages (1996) (2)
119 -km, 420 Mb/s Transmission with a 1.55 µm Single-Frequency Laser (1983) (2)
Monolithically Integratable Colliding Pulse Modelocked Laser Source for O-CDMA Photonic Chip Development (2008) (2)
10 Gbit/s penalty-free transmission over 48 km using 1.3-/spl mu/m wavelength electroabsorption modulated lasers (EML) for metro-loop transmission link (1996) (2)
A full-duplex coherent communication system using integrated transceivers with counter-mixing scheme (1997) (2)
Short pulse generation using semiconductor lasers (1992) (2)
High-reliability nonhermetic 1.3-um InP-based uncooled lasers (1996) (2)
New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 μm Wavelength Region (1982) (2)
Summary Abstract: Reflection high‐energy electron diffraction intensity oscillation during the growth of GaAs by chemical‐beam epitaxy (1988) (2)
Three-channel wavelength division multiplexing experiment in single-mode fiber at 432 Mbit/sec (1984) (2)
Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs (1987) (2)
A time-shared coherent access network capable of dynamic wavelength assignment and adjustable bandwidth partitioning (1998) (2)
Effects of cation diffusion during chemical beam etching (1995) (2)
Waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (1987) (2)
Effects of cation diffusion on the monolayer control of chemical beam etching (1994) (2)
Semiconductor Lasers and Photodetectors by Molecular Beam Epitaxy (1985) (2)
Threshold current characteristics of GaAs lasers under short pulse excitation (1984) (2)
Metal-Semiconductor-Metal Demultiplexing Waveguide Photodetectors in InGaAs /GaAs Quantum Well Structures by Selective Bandgap Tuning (1991) (2)
Erratum: Delta‐doped ohmic contacts to n‐GaAs [Appl. Phys. Lett. 49, 292 (1986)] (1986) (1)
Microfabrication using laser‐beam interferometric technique coupled with simultaneous exposure and development method (1975) (1)
Optical measurement of surface recombination in InGaAs QW mesa structures (1988) (1)
TA-B5 pulsations and absorbing defects in (Al,Ga)As injection lasers (1979) (1)
In-situ dry etching of InP using phosphorus trichloride inside a chemical beam epitaxial growth chamber (1993) (1)
MICROWAVE INTENSITY AND FREQUENCY MODULATION OF RIDGE-WAVEGUIDE-TYPE DFB LASERS (1984) (1)
Pentacarbonyliron doping for semi-insulating InP by chemical beam epitaxy (1995) (1)
Measurement of electron drift velocity in compositionally graded AlxGa1-xAs by time resolved optical picosecond reflectivity (1982) (1)
Chemical Beam Epitaxy of III-V Semiconductors (1986) (1)
Novel Optoelectronic Devices Prepared By Molecular Beam Epitaxy (1982) (1)
Optical fiber spatial filtering technique for investigating carrier dynamics (1988) (1)
Spectral Holeburning and Four-Wave Mixing in InGaAs/InP Quantum Wells (1989) (1)
CHEMICAL BEAM EPITAXY OF III-V SEMICONDUCTOR HETEROSTRUCTURES (1987) (1)
Packaging relaxed semiconductor lasers with diluted waveguide structure (1994) (1)
Integrated optoelectronics: practicalities and potentials (2005) (1)
Cleaved-Coupled-Cavity (C 3 ) Semiconductor Lasers (1984) (1)
Optical measurement of ion implantation damage depth in multiple‐quantum‐well mesa structures (1991) (1)
Gain-coupled long wavelength InGaAsP/InP distributed feedback lasers with quantum well gratings grown by chemical beam epitaxy (1992) (1)
Photoinduced field modulation in multiquantum well heterostructures: A new photocurrent gain mechanism (1989) (1)
RHEED Intensity Oscillation Studies of the Kinetics of GaAs Deposition During Chemical Beam Epitaxy(CBE) (1987) (1)
Summary Abstract: Molecular beam epitaxy for semiconductor lasers operating at 0.61–20 μm (1985) (1)
1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy (1990) (1)
Dispersion penalty free transmission over 130 km standard fiber using a 1.55 /spl mu/m, 10 Gb/s integrated EA/DFB laser with low extinction ratio and negative chirp (1996) (1)
Summary Abstract: Atomic structure of semiconductor interfaces (1987) (1)
Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser (1997) (1)
Summary Abstract: Two‐dimensional hole gas at a semiconductor heterojunction (1980) (1)
Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells (1989) (1)
Wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy (1987) (1)
Tunability of Intrinsic Stress in Sio x Dielectric Films Formed by Molecular Beam Deposition (1994) (1)
Stabilization of Cleaved-Coupled- Cavity (C3) Lasers (1984) (1)
Experimental and theoretical characterization of delta-doped quantum well field-effect transistors grown by gas-source molecular-beam epitaxy (1988) (1)
Wavelength division multiplexed (WDM) electroabsorption modulated laser fabricated by selective area growth MOVPE techniques (1997) (1)
In-Situ Dry Etching of InP Using Phosphorus Tri-Chloride and Re-Growth Inside a Chemical Beam Epitaxial Growth Chamber (1993) (1)
Single-mode picosecond optical pulses generated by a semiconductor DFB laser with QW loss gratings (1992) (1)
Low-threshold InGaAs/GaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers grown by chemical beam epitaxy (1993) (1)
Erbium-doped semiconductor injection lasers: enhanced single-longitudinal-mode operation and 1.5-μm transmission experiment (1987) (0)
Large Optical Nonlinearities in Room-Temperature GaAs-GaAlAs Multiple Quantum Well Structures (1982) (0)
16-channel × 100-GHz monolithically integrated O-CDMA transmitter with SPECTS encoder and seven 10-GHz mode-locked lasers (2010) (0)
AℓxGa1-xAs/AℓyGa1-yAs Heterostructure Lasers Grown by Molecular Beam Epitaxy (1980) (0)
10-Gbit/s penalty-free optical transmission over 102.5 km of standard fiber using 1.3-/spl mu/m electroabsorption modulated laser and Raman amplifier (1996) (0)
Observation of quantum well polarization effects in the photocurrent of multilayer diodes (1990) (0)
Exciton Localization in In0.53Ga0.47As/InP Alloy Quantum Wells (1988) (0)
Application of integrated active filters in multichannel optical communication systems (1997) (0)
Interlayer-Directionally Grating-Coupled III-V ARROW Structures for Integrated Opto-electronics (1987) (0)
Field effect transistor contact with a delta-doped ohmic. (1987) (0)
Channel monitoring, control and equalisation of multichannel fibre transmission system by multisection integrated active filters (1998) (0)
Lateral Optical Confinement in GaAs - Ga0.7Al0.3 As Heterostructure Waveguides Fabricated by Liquid-Phase Epitaxy Over Preferentially Etched Channels (1976) (0)
IIB-3 new interdigitated pn junction device with novel capacitance-voltage characteristic and ultrahigh optical sensitivity (1982) (0)
InGaAsP/InGaAs multi-quantum-well distributed-Bragg-reflector lasers grown by chemical beam epitaxy (1993) (0)
Zinc doping of Ga 0 . 51 In 0 . 49 P grown on GaAs ( 100 ) substrates by chemical beam epitaxy (2014) (0)
Reliable (AlGa)As DH Lasers Grown By Molecular Beam Epitaxy For Optical Communication Systems (1981) (0)
Recent advances in chemical beam epitaxy for opto-electronic device applications (1993) (0)
Recent developments in (AlGa)As DH lasers grown by molecular beam epitaxy for optical communication systems (1981) (0)
Summary Abstract: InGaAsSb/AlGaAsSb double heterostructure laser prepared by molecular beam epitaxy (1987) (0)
Exciton Localization in In 0.53 Ga 0.47 As/InP Alloy Quantum Wells (1988) (0)
High-Reliability 1.3-p Lasers in Nonherme (1996) (0)
Junction Arrays for Superconducting Application. (1977) (0)
Future Iightwave Networks And Devices (1997) (0)
Monolayer control of chemical beam etching for regrowth (1994) (0)
Arrangements which include a doped semiconductor material (1992) (0)
Carrier lifetime reduction in GaInAs/InP multiple quantum well mesa structures (1990) (0)
Semiconductor lasers: A choice structure for lightwave communications (1985) (0)
Ultra High Gain Ga0.47 In0.53 As Photoconductive Detectors Grown by Chemical Beam Epitaxy (1986) (0)
Chemical beam epitaxy for opto-electronics and electronics applications (2008) (0)
(AlGa)As DH lasers grown by molecular beam epitaxy for optical communication systems (1980) (0)
Quantum size effect in delta-doped AlGaAs heterostructures (1988) (0)
High Reflectivity, 1.55/spl mu/m InP/lnGaAsP Surface-emitting-laser Mirror Grown By Chemical Beam Epitaxy (1991) (0)
Chemical Beam Epitaxy of GalnP on GaAs(l 00) Substrates and its Application to 0.98μm Lasers (1992) (0)
Zinc doping of Ga o . 51 ino . 4 sP grown on GaAs ( lQ 0 ) substrates by chemica beam epitaxy (1999) (0)
Long-Wavelength InGaAsPDnP Multiquantum Well Distributed Feedback and Distributed Bragg Reflector Lasers Grown by Chemical Beam Epitaxy (2004) (0)
Enhancements in Two Dimensional Electron Gas Density and Mobility in δ-Doped AiGaAs Heterostructures (1987) (0)
TA-B1 very low current-threshold GaAs-AlxGa1-xAs double-heterostructure lasers grown by molecular beam epitaxy (1979) (0)
Nonlinear spectroscopy in InGaAs/InP multiple quantum wells (1987) (0)
InGaAshGaAsP integrated tunable detector grown by chemical beam epitaxy (1999) (0)
IIIA-7 measurement of high electron drift velocity in a submicron heavily doped graded GAP Al<inf>x</inf>Ga<inf>1-x</inf>As layer (1983) (0)
High-speed optoelectronic sources for multi-gigabit communication links (1994) (0)
A new InGaAs/InGaAsP delta -strained multiple-quantum-well laser grown by chemical-beam epitaxy (1991) (0)
IIIA-1 gain and carrier lifetime measurement in AlGaAs quantum well lasers (1983) (0)
1 . 5 m wavelength InGaAs / InGaAsP distributed feedback multiquantumwell lasers grown by chemical beam epitaxy (2014) (0)
VB-7 InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical-beam epitaxy (1987) (0)
GaInP cladding layers grown by chemical beam epitaxy (2004) (0)
Nonlinear Optical Logic Etalon at Todays Fiber Communication Wavelengths (1987) (0)
Emitting far field pattern study of long wavelength grating coupling surface emitting lasers (1994) (0)
A bird’s eye assessment of the Japanese optoelectronics: semiconductor lasers, LEDs, and integrated optics (2008) (0)
Optical Clock Recovery Operation of a Colliding-Pulse Mode-Locked Laser Diode with Integrated Active-Passive Waveguides (2006) (0)
Very low threshold long wavelength surface emitting lasers (1994) (0)
Dynamic single mode semiconductor laser for optical communications (1984) (0)
GaAs-Ga$sub 1$/sub hyphen//sub xAl/sub x/As double-heterostructure injection lasers with distributed Bragg reflectors (1976) (0)
Introduction to the issue on optoelectronic materials and processing (1997) (0)
The Effect of Growth Temperature Instability in the CBE Growth of ln/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/lnP Multiple Quantum Well Structures (1992) (0)
Semiconductor lasers for WDM systems and beyond (1999) (0)
Design, Fabrication And Performance Of A Very High Side-mode-suppression-ratio Distributed-Bragg-reflector Laser (1992) (0)
Growth and device applications using molecular beam epitaxy (1979) (0)
Epitaxial growth and optoelectronics (1995) (0)
Optical measurement of ambipolar carrier diffusivity in direct-gap semiconductors (1988) (0)
In-situ monolayer etching and regrowth of InP/InGaAsP (1995) (0)
Summary Abstract: A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy (1988) (0)
Simple-structure integrated coherent transceiver with novel counter-receiving heterodyne detection scheme (1999) (0)
SUBPICOSECOND LUMINESCENCE STUDY OF ELECTRON AND HOLE CAPTURE IN QUANTUM WELLS (1988) (0)
Counter-mixing mode integrated heterodyne transceivers (1997) (0)
The preparation of low current-threshold infra-red-visible (0.89-0.72µm) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy (1979) (0)
VIA-1 very low dark current and high quantum efficient InGaAs/InP p-i-n photodiodes grown by chemical-beam epitaxy (1986) (0)
IIIA-7 measurement of high electron drift velocity in a submicron heavily doped graded GAP Al x Ga 1-x As layer (1983) (0)
Chemical Beam Etching With Monolayer Control (1994) (0)
Recent advances in chemical beam epitaxy (1992) (0)
Chemical Beam Etching and Epitaxy with Atomic Scale Control and Instant Switching between Etching and Epitaxy (1995) (0)
Light-emitting diode having stripe geometry and manufacturing process here for (1978) (0)
Quantumswitched heterojunction bistable bipolar transistor by chemical beam epitaxy (2014) (0)
An Integrated Four-channel Tunable Distributed-feedback Laser Array (1997) (0)
Multi-wavelength laser array by chemical beam epitaxy on patterned InP substrates (1993) (0)
Masked Molecular Beam Epitaxy (1978) (0)
Future Prospects of Opto-Electronic Devices and Processings (1991) (0)
Observation of optical Stark shift in InGaAs/InP multiple quantum wells (1987) (0)
DFB LASERS: SET TO PROFIT FROM FIBER OPTIC ADVANCES. (1986) (0)

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