Won‐tien Tsang
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Physics
Won‐tien Tsang's Degrees
- PhD Physics University of California, Berkeley
- Bachelors Physics University of California, Berkeley
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(Suggest an Edit or Addition)Won‐tien Tsang's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures (1982) (338)
- Observation of the excited level of excitons in GaAs quantum wells (1981) (307)
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio (1982) (296)
- Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy (1982) (267)
- High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers (1983) (234)
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy (1981) (231)
- Chemical beam epitaxy of InP and GaAs (1984) (211)
- Extrinsic photoluminescence from GaAs quantum wells (1982) (185)
- A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam (1981) (159)
- A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy (1988) (146)
- Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy (1986) (143)
- Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition (1977) (134)
- Capture of electrons and holes in quantum wells (1988) (133)
- Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As (1987) (122)
- Auger recombination in bulk and quantum well InGaAs (1990) (119)
- Subpicosecond pulses from passively mode‐locked GaAs buried optical guide semiconductor lasers (1981) (117)
- The effects of lateral current spreading, carrier out‐diffusion, and optical mode losses on the threshold current density of GaAs‐AlχGa1−χAs stripe‐geometry DH lasers (1978) (107)
- Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K (1987) (101)
- Extrinsic layer at AlxGa1−xAs‐GaAs interfaces (1982) (90)
- Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy (1979) (86)
- Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes (1989) (83)
- Progress in chemical beam epitaxy (1990) (81)
- Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy (1979) (81)
- Delta-doped ohmic contacts to n-GaAs (1986) (77)
- Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrations n2DEG≥1.5×1012 cm−2 for field‐effect transistors (1987) (76)
- The graded bandgap multilayer avalanche photodiode: A new low-noise detector (1982) (75)
- dc analysis of parallel arrays of two and three Josephson junctions (1975) (73)
- The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy (1980) (72)
- Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy (1987) (72)
- Integrated multilayer GaAs lasers separated by tunnel junctions (1982) (71)
- Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy (1987) (67)
- Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes (1989) (66)
- Growth characteristics of GaAs‐Ga1−xAlxAs structures fabricated by liquid‐phase epitaxy over preferentially etched channels (1976) (64)
- Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers (1986) (64)
- Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks (1977) (62)
- Long-wavelength InGaAsP/InP distributed feedback lasers incorporating gain-coupled mechanism (1992) (61)
- High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy (1988) (60)
- Molecular beam epitaxial writing of patterned GaAs epilayer structures (1978) (60)
- From chemical vapor epitaxy to chemical beam epitaxy (1989) (60)
- Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices (1987) (60)
- The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers (1978) (59)
- Gain and carrier lifetime measurements in AlGaAs single quantum well lasers (1983) (59)
- Perpendicular electronic transport in doping superlattices (1987) (59)
- Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers (1982) (59)
- Preferentially etched diffraction gratings in silicon (1975) (59)
- Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range (1987) (58)
- GaAs‐Ga1‐xAlxAs double‐heterostructure injection lasers with distributed Bragg reflectors (1976) (56)
- Molecular beam epitaxial growth of In1−xGaxAs1−ySby lattice matched to GaSb (1985) (56)
- GaAs-Al x Ga 1-x As strip buried heterostructure lasers (1979) (55)
- New graded band‐gap picosecond phototransistor (1983) (54)
- The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkyls (1986) (54)
- Photoluminescence study of acceptors in AlxGa1−xAs (1982) (54)
- High-Power Fundamental-Transverse-Mode Strip Buried Heterostructure Lasers with Linear Light-Current Characteristics (1978) (54)
- Pulsations and absorbing defects in (Al,Ga)As injection lasers (1979) (53)
- Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy (1982) (53)
- Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy (1980) (52)
- Heterostructure semiconductor lasers prepared by molecular beam epitaxy (1984) (52)
- Growth of high‐quality GaxIn1−xAsyP1−y by chemical beam epitaxy (1987) (52)
- Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy (1986) (51)
- Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy (1991) (51)
- Observation of optical Stark effect in InGaAs/InP multiple quantum wells (1987) (51)
- Effect of growth temperature on the photoluminescent spectra from Sn‐doped Ga1−xAlxAs grown by molecular beam epitaxy (1981) (51)
- Chemical beam epitaxial growth of extremely high quality InGaAs on InP (1986) (50)
- Lattice‐mismatch‐generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy (1989) (49)
- Determination of the atomic configuration at semiconductor interfaces (1987) (49)
- Self‐terminating thermal oxidation of AlAs epilayers grown on GaAs by molecular beam epitaxy (1978) (47)
- Molecular beam epitaxy of GaSb0.5As0.5 and AlxGa1−xSbyAs1−y lattice matched to InP (1985) (46)
- Chemical beam epitaxy of InGaAs (1985) (46)
- Bound excitons in p-doped GaAs quantum wells (1982) (46)
- Advances in MOVPE, MBE, and CBE (1992) (46)
- High quality InP grown by molecular beam epitaxy (1982) (45)
- High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy (1991) (45)
- Monolithic InP 100-Channel $\times$ 10-GHz Device for Optical Arbitrary Waveform Generation (2011) (45)
- Optical measurement of surface recombination in InGaAs quantum well mesa structures (1988) (45)
- Semiconductor laser physics (1982) (45)
- Two‐dimensional hole gas at a semiconductor heterojunction interface (1980) (44)
- Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-μm, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirp (1996) (43)
- Carrier induced refractive index change in AlGaAs quantum well lasers (1984) (42)
- Optical gain and loss processes in GaInAs/InP MQW laser structures (1989) (42)
- Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time‐resolved optical picosecond reflectivity (1982) (41)
- Selectively δ‐doped quantum well transistor grown by gas‐source molecular‐beam epitaxy (1988) (41)
- Al0.48In0.52 As/Ga0.47In0.53 As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm (1981) (41)
- Monolayer chemical beam etching: Reverse molecular beam epitaxy (1993) (40)
- Wavelength selective interlayer directionally grating‐coupled InP/InGaAsP waveguide photodetection (1987) (40)
- Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback (1992) (40)
- Simultaneous exposure and development technique for making gratings on positive photoresist (1974) (39)
- Self‐aligned enhancement‐mode and depletion‐mode GaAs field‐effect transistors employing the δ‐doping technique (1986) (39)
- Stable single-longitudinal-mode operation under high-speed direct modulation in cleaved-coupled-cavity GaInAsP semiconductor lasers (1983) (38)
- Chemical Beam Epitaxy and Related Techniques (1997) (38)
- Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm (1984) (38)
- New transitions in the photoluminescence of GaAs quantum wells (1981) (38)
- Modulation bandwidth enhancement and nonlinear distortion suppression in directly modulated monolithic injection-locked DFB lasers (2003) (37)
- The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially‐grown Sn‐doped AlxGa1−xAs (1981) (37)
- InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain‐bandwidth product (1987) (36)
- Elimination of oval defects in epilayers by using chemical beam epitaxy (1985) (36)
- Chemical beam epitaxial growth of high‐purity GaAs using triethylgallium and arsine (1987) (36)
- High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxy (1990) (36)
- The effect of substrate growth temperature on deep levels in n‐AlxGa1−xAs grown by molecular beam epitaxy (1981) (36)
- 1.55‐μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers (1985) (36)
- Transport in double‐barrier resonant tunneling structures (1987) (35)
- Doping studies using thermal beams in chemical‐beam epitaxy (1986) (35)
- In situ Ohmic‐contact formation to n‐ and p‐GaAs by molecular beam epitaxy (1978) (35)
- Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichloride (1993) (34)
- A densely packed monolithic linear array of GaAs‐AlxGa1−xAs strip buried heterostructure laser (1979) (34)
- Band lineups at the GaSb-AlxGa1―xSb hetero-junction: experimental evidence for a new common anion rule (1987) (34)
- 1.5 μm wavelength GaInAsP C3 lasers: single-frequency operation and wideband frequency tuning (1983) (34)
- Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy (1990) (34)
- 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy (1982) (33)
- Profile and groove‐depth control in GaAs diffraction gratings fabricated by preferential chemical etching in H2SO4‐H2O2‐H2O system (1976) (33)
- Delta-doped avalanche photodiodes for high bit-rate lightwave receivers (1991) (33)
- Al‐Ga disorder in AlxGa1−xAs alloys grown by molecular beam epitaxy (1981) (33)
- Device characteristics of (AlGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxy (1981) (32)
- MICROWAVE INTENSITY AND FREQUENCY MODULATION OF HETEROEPITAXIAL-RIDGE-OVERGROWN DISTRIBUTED FEEDBACK LASERS. (1985) (32)
- InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE (1992) (32)
- Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wells (1987) (31)
- Time‐resolved measurements of tunneling between double quantum wells in In0.53Ga0.47As/InP (1989) (31)
- An optical switching and routing system using frequency tunable cleaved-coupled-cavity semiconductor lasers (1984) (31)
- Preparation of 1.78‐μm wavelength Al0.2Ga0.8Sb/GaSb double‐heterostructure lasers by molecular beam epitaxy (1983) (31)
- Chemical beam epitaxy (1988) (31)
- Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy (1990) (30)
- Optical waveguides fabricated by preferential etching. (1975) (30)
- Pulsating output of separate confinement buried optical guide lasers due to the deliberate introduction of saturable loss (1981) (30)
- Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength (1987) (30)
- Single-frequency semiconductor lasers? (1986) (29)
- Measurement of high electron drift velocity in a submicron, heavily doped graded gap AlxGa1−xAs layer (1983) (29)
- Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser (2006) (29)
- Control of lasing wavelength in distributed feedback lasers by angling the active stripe with respect to the grating (1993) (29)
- Reflection high‐energy electron diffraction studies on the molecular‐beam‐epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb (1985) (29)
- Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3 (1990) (29)
- High-speed waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (MQWs) (1987) (28)
- Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy (1991) (27)
- Chapter 5 The Cleaved-Couple-Cavity (C3) Laser (1985) (27)
- Multidielectrics for GaAs MIS devices using composition‐graded AlxGa1−xAs and oxidized AlAs (1979) (27)
- A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material (1991) (27)
- Symmetric separate confinement heterostructure lasers with low threshold and narrow beam divergence by m.b.e. (1980) (26)
- Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy (1980) (26)
- High‐field transport in an InGaAs‐InP superlattice grown by chemical beam epitaxy (1988) (26)
- Very high quality single and multiple GaAs quantum wells grown by chemical beam epitaxy (1986) (25)
- Low‐current‐threshold strip‐buried‐heterostructure lasers with self‐aligned current injection stripes (1979) (25)
- A review of CBE, MOMBE and GSMBE (1991) (25)
- Monolithically integrated InP wafer-scale 100-channel × 10-GHz AWG and Michelson interferometers for 1-THz-bandwidth optical arbitrary waveform generation (2010) (25)
- Zinc-doping of InP during chemical beam epitaxy using diethylzinc (1991) (25)
- cw narrow beam (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy (1981) (25)
- Iron‐doped semi‐insulating InP grown by chemical beam epitaxy (1989) (25)
- GaAs‐AlxGa1−xAs strip‐buried‐heterostructure lasers with lateral‐evanescent‐field distributed feedback (1979) (24)
- Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies (1987) (24)
- Tunneling in In0.53Ga0.47As‐InP double‐barrier structures (1987) (23)
- Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers (1986) (23)
- Shallow donors in very pure GaAs grown by gas source molecular beam epitaxy (1988) (23)
- Strained-layer 1.5 mu m wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxy (1990) (23)
- Optoelectronic logic operations by cleaved-coupled-cavity semiconductor lasers (1983) (23)
- Bit-error-rate saturation due to mode-partition noise induced by optical feedback in 1.5-µm single longitudinal-mode C 3 and DFB semiconductor lasers (1985) (22)
- 1.55‐μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wells (1987) (22)
- High‐through‐put, high‐yield, and highly‐reproducible (AlGa)As double‐heterostructure laser wafers grown by molecular beam epitaxy (1981) (22)
- Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxy (1985) (22)
- Broad-band tunable electroabsorption modulated laser for WDM application (1997) (21)
- Single‐longitudinal mode performance characteristics of cleaved‐coupled‐cavity lasers (1983) (21)
- Chapter 7 Quantum Confinement Heterostructure Semiconductor Lasers (1987) (21)
- Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy (1986) (21)
- Spectral bistability in coupled cavity semiconductor lasers (1984) (21)
- Ga 0.47 In 0.53 As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy (1987) (21)
- The high‐temperature (55–70 °C) device characteristics of cw (AlGa)As double‐heterostructure proton‐bombarded stripe lasers grown by molecular beam epitaxy (1981) (20)
- Spin-dependent recombination in GaAs (1980) (20)
- Miniband conduction of minority electrons and negative transconductance by quantum reflection in a superlattice transistor (1990) (20)
- Lateral-current confinement in a GaAs planar stripe-geometry and channeled substrate buried DH laser using reverse-biased p-n junctions (1978) (20)
- Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb (1986) (20)
- GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement (1980) (20)
- Enhanced frequency modulation in cleaved‐coupled‐cavity semiconductor lasers with reduced spurious intensity modulation (1983) (20)
- New current injection 1.5‐μm wavelength GaxAlyIn1−x−yAs/InP double‐heterostructure laser grown by molecular beam epitaxy (1983) (20)
- Channeling photodiode: A new versatile interdigitated p‐n junction photodetector (1982) (19)
- Molecular beam deposition of high quality silicon oxide dielectric films (1995) (19)
- Molecular beam epitaxial growth of high‐purity AlGaAs (1987) (19)
- A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy (1981) (18)
- Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature (1985) (18)
- Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy (1986) (18)
- GaInAsP/InP double heterostructure lasers emitting at 1.5 μm grown by chemical beam epitaxy (1987) (17)
- Measurement of heterojunction band offsets in InP/Ga0.47In0.53As by admittance spectroscopy (1987) (17)
- Current status review and future prospects of CBE, MOMBE and GSMBE (1991) (17)
- Optical injection-locked gain-lever distributed Bragg reflector lasers with enhanced RF performance (2004) (17)
- InGaAs/InGaAsP Integrated Tunable Detector Grown By Chemical Beam Epitaxy (1992) (17)
- Optically pumped GaSb/Al0.6Ga0.4Sb multiquantum well lasers operating in the λ=1.5–1.6 μm region (1984) (17)
- Alignment-relaxed 1.55 mu m multiquantum well lasers fabricated using standard buried heterostructure laser processes (1995) (16)
- Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular‐beam epitaxy (1986) (16)
- The cw electro‐optical properties of (Al,Ga)As modified‐strip buried‐heterostructure lasers (1980) (16)
- Heteroepitaxial ridge‐overgrown distributed feedback laser at 1.5 μm (1984) (16)
- Extension of lasing wavelengths beyond 0.87 μm in GaAs/AlxGa1−xAs double‐heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy (1981) (16)
- cw multiwavelength transverse‐junction‐stripe lasers grown by molecular beam epitaxy operating predominantly in single‐longitudinal modes (1980) (16)
- Optically pumped laser oscillation at 3.82 μm from InAs1−xSbx grown by molecular beam epitaxy on GaSb (1985) (15)
- GaAs/AlGaAs quantum wells and double-heterostructure lasers grown by chemical beam epitaxy (1986) (15)
- Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices (1990) (15)
- A new current‐injection heterostructure laser: The double‐barrier double‐heterostructure laser (1981) (15)
- GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 A) grown by chemica (1988) (15)
- Spectral dependence of propagation loss in InP/InGaAsP antiresonant reflecting optical waveguides grown by chemical beam epitaxy (1987) (15)
- A thin-film prism as a beam separator for multimode guided waves in integrated optics (1975) (15)
- In-situ dry etching of InP using phosphorus trichloride and regrowth inside a chemical beam epitaxial growth chamber (1994) (15)
- Spectral phase encoded time spread optical code division multiple access technology for next generation communication networks [Invited] (2007) (15)
- Optically integrated coherently coupled AlxGa1−xAs lasers (1983) (15)
- Dependence of the conduction in In0.53Ga0.47As‐InP double‐barrier tunneling structures on the mesa‐etching process (1987) (15)
- Theoretical modeling of the simultaneous exposure and development (SED) process of a positive photoresist. (1977) (14)
- Interdigitated pn junction device with novel capacitance/voltage characteristic, ultralow capacitance and low punch-through voltage (1982) (14)
- Long-wavelength InGaAsP/InP multiquantum well distributed feedback and distributed Bragg reflector lasers grown by chemical beam epitaxy (1994) (14)
- All‐gaseous doping during chemical‐beam epitaxial growth of InGaAs/InGaAsP multi‐quantum‐well lasers (1991) (14)
- Room temperature photopumped 1.5-μm quantum well surface-emitting lasers with InGaAs/P/InP distributed Bragg reflectors (1991) (14)
- Thin‐film beam splitter and reflector for optical guided waves (1975) (14)
- Mode properties of GaAs‐Ga1−xAlxAs heterostructure inverted‐ridge optical waveguides (1976) (13)
- cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy (1980) (13)
- Temperature and excitation dependences of active layer photoluminescence in (Al,Ga)As laser heterostructures (1983) (13)
- Transport through InGaAs‐InP superlattices grown by chemical beam epitaxy (1989) (13)
- InGaAs/InP p‐i‐n photodiodes grown by chemical beam epitaxy (1986) (13)
- Growth of device quality GaAs by chemical beam epitaxy (1988) (13)
- Negative transconductance superlattice base bipolar transistor (1989) (13)
- The preparation of GaAs thin‐film optical components by molecular beam epitaxy using Si shadow masking technique (1979) (13)
- Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstration (1992) (13)
- Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion (1994) (13)
- Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy (1992) (12)
- The effect of growth temperature instability in the CBE growth of InxGa1-xAsyP1-y/InP multiple quantum well structures (1992) (12)
- The heteroepitaxial ridge-overgrown distributed feedback laser (1985) (12)
- Reduced threshold current temperature dependence in double heterostructure lasers due to separate p-n and heterojunctions (1983) (12)
- Channeled‐substrate‐planar‐structure semiconductor lasers with lateral‐evanescent‐field distributed feedback (1979) (12)
- High-reliability 1.3-/spl mu/m InP-based uncooled lasers in nonhermetic packages (1996) (12)
- cw electro‐optical characteristics of graded‐index waveguide separate‐confinement heterostructure lasers with proton‐delineated stripe (1983) (12)
- Room‐temperature optically pumped laser oscillation at 2.07 μm from Ga0.85In0.15As0.13Sb0.87/ Al0.4Ga0.6As0.035Sb0.965 double heterostructures grown by molecular‐beam epitaxy on GaSb substrates (1986) (12)
- Wavelength uniformity of 1.3 mu m GaInAsP/InP distributed Bragg reflector lasers with hybrid beam/vapour epitaxial growth (1988) (12)
- Optical investigation of quantum‐well fluctuations in In0.53Ga0.47As/InP superlattices (1987) (12)
- Chemical Beam Epitaxy of GalnP on GaAs(l 00) Substrates and its Application to 0.98/spl mu/m Lasers (1992) (12)
- Very high purity GaAs grown by gas source molecular beam epitaxy (1989) (11)
- 1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy (1991) (11)
- Anisotropically etched deep gratings for InP/InGaAsP optical devices (1987) (11)
- Well width dependence of the carrier life time in InGaAs/InP quantum wells (1989) (11)
- Optical generation of millimeter-waves using monolithic sideband injection locking of a two-section DFB laser (2003) (11)
- The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy (1981) (11)
- Stress free and moisture insensitive silicon oxide dielectric films formed by molecular‐beam deposition (1995) (11)
- Transient single‐longitudinal mode stabilization in double active layer GaInAsP/InP laser under high‐bit rate modulation (1983) (10)
- Lateral current confinement by reverse‐biased junctions in GaAs‐AlxGa1−xAs DH lasers (1977) (10)
- GaInAs metal/semiconductor/metal photodetectors with Fe:InP barrier layers grown by chemical beam epitaxy (1989) (10)
- Mode‐locked semiconductor lasers with gateable output and electrically controllable optical absorber (1983) (10)
- Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy (1981) (10)
- A new high‐power, narrow‐beam transverse‐mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge‐overgrown laser (1984) (10)
- Transient effects in external cavity semiconductor lasers (1983) (10)
- Integrated coherent transceivers for broad-band access networks (1997) (10)
- High-transconductance heterostructure Ga/sub 0.47/In/sub 0.53/As/InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy (1988) (10)
- InP/InGaAsP/InGaAs SAGM avalanche photodiode with delta-doped multiplication region (1991) (10)
- Surface cleaning of GaAs by in situ chemical beam etching (1994) (9)
- Monolayer chemical beam etching (1994) (9)
- High performance Ga0.47In0.53As photoconductive detectors grown by chemical beam epitaxy (1986) (9)
- Modelling of chemical beam epitaxy (1989) (9)
- Demonstration of multilevel multichannel optical frequency shift keying (FSK) with cleaved-coupled-cavity (C3) semiconductor lasers (1983) (9)
- Low‐threshold and high‐temperature operation of 1.55‐μm self‐aligned ridge‐waveguide multiple‐quantum‐well lasers grown by chemical‐beam epitaxy (1991) (9)
- The characterization and functional reliability of 45 Mbit/s optical transmitters containing MBE-grown lasers (1983) (9)
- Control of lasing wavelength in distributed feedback lasers by angling the active stripe with respect to the grating (1993) (9)
- Microfabrication of two‐dimensional periodic arrays by laser beam interferometric technique (1975) (9)
- Strip buried heterostructure lasers with passive distributed Bragg reflectors (1979) (9)
- Development of self-pulsations due to self-annealing of proton bombarded regions during aging in proton bombarded stripe-geometry AlGaAs DH lasers grown by molecular beam epitaxy (1980) (9)
- (AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth (1982) (9)
- Selective-area epitaxy and etching by chemical beam epitaxy (1993) (8)
- 1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures (1988) (8)
- Molecular-beam epitaxially grown 1.3 μm GaInAsP/InP double-heterostructure lasers (1982) (8)
- Doping in semiconductors with variable activation energy (1992) (8)
- Multiwavelength laser array by chemical beam epitaxy on patterned InP substrates (1993) (8)
- Semiconductors and semimetals (1985) (8)
- Influence of the current‐phase relation on the critical‐current‐applied‐magnetic‐flux dependence in parallel‐connected Josephson junctions (1976) (8)
- Optical detection of interwell‐exciton transfer in In0.53Ga0.47As/InP quantum wells grown by chemical beam epitaxy (1987) (8)
- Analysis of ring distributed‐feedback lasers (1974) (8)
- Electronic properties of In0.53Ga0.47As‐InP single quantum wells grown by chemical beam epitaxy (1987) (8)
- The occurrence of cross hatch during GaAs homoepitaxy (1986) (8)
- GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattice lattice matched to InP prepared by molecular beam epitaxy (1985) (7)
- Growth of bright (300 K) luminescence InAsxP1−x (λ=1.7–2.1 μ) on InP substrates by molecular beam epitaxy (1984) (7)
- Grating masks suitable for ion-beam machining and chemical etching (1974) (7)
- WDM channel monitoring and signal power control/equalization using integrated tunable active filters (1997) (7)
- New photoconductive gain mechanism by electric field modulation in multiquantum‐well heterostructures (1989) (7)
- The preparation of materials for optoelectronic applications by molecular beam epitaxy (1984) (7)
- Light scattering determination of band offsets in GaAs(AlGa)As and GaSb(AlGa)Sb quantum wells: A comparative study (1987) (7)
- Threshold‐wavelength and threshold‐temperature dependences of GaInAsP/InP lasers with frequency selective feedback operating in the 1.3‐ and 1.5‐μm regions (1983) (7)
- Semiconductor Lasers and Photodetectors (1985) (7)
- XFROG characterization of a 10 GHz colliding-pulse mode-locked laser (2006) (7)
- Large-signal analog modulation response of monolithic optical injection-locked DFB lasers (2005) (7)
- Stripe-geometry laser with in-situ ohmic contact and self-aligned native surface oxide mask for current isolation prepared by molecular beam epitaxy (1982) (7)
- The superlattice photodetector: A new avalanche photodiode with a large ionization rates ratio (1981) (7)
- The C3 Laser (1984) (6)
- Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam (1983) (6)
- Tapered edge ridge waveguides for integrated optics. (1975) (6)
- Electron transport of (Al,Ga)Sb/InAs heterojunctions prepared by molecular beam epitaxy (1987) (6)
- Very low threshold 1.55 μm grating coupled surface‐emitting lasers for optical signal processing and interconnect (1995) (6)
- High-speed integrated electroabsorption modulators (1997) (6)
- Electrical control optical delay lines made of y-junction SOA switches (1998) (6)
- 10-Gbit/s transmission using an integrated electroabsorption-modulator/DFB laser grown by selective-area epitaxy (1995) (6)
- A novel monolithically integrated Mach-Zehnder wavelength converter using cross modulation in electro-absorber (2005) (6)
- Very high sidemode-suppression-ratio distributed-Bragg-reflector lasers grown by chemical beam epitaxy (1992) (6)
- Optical gain in strain-free and strained layer GaxIn1-xAs/InP superlattices (1989) (5)
- New large optical cavity laser with distributed active layers (1983) (5)
- InP/InGaAsP/InGaAs avalanche photodiodes with 70-GHz gainbandwidth product grown by chemical beam epitaxy (1988) (5)
- Elimination of light scattering from grating irregularities by using a quantum well grating in index or gain-coupled distributed feedback lasers (1993) (5)
- Active spectral stabilization of cleaved-coupled-cavity (C3) lasers (1984) (5)
- Superlattice, graded band gap, channeling and staircase avalanche photodiodes towards a solid-state photomultiplier (1982) (5)
- Summary Abstract: High purity molecular beam epitaxy grown AlGaAs (1987) (5)
- Wideband frequency-shift keying with a spectrally bistable cleaved-coupled-cavity semiconductor laser (1983) (5)
- Quantum‐switched heterojunction bipolar transistor (1989) (5)
- Chapter 2 Molecular Beam Epitaxy for III–V Compound Semiconductors (1985) (5)
- A thin−film ring distributed−feedback laser (1975) (4)
- GaAsGa1−xAlxAs double-heterostructure injection lasers with distributed bragg reflectors☆ (1976) (4)
- Delta-Doped Sagm-Avalanche Photodiodes (1991) (4)
- Selfaligned InGaAs/InP heterostructure bipolar transistors (1991) (4)
- Zinc doping of Ga0.51In0.49P grown on GaAs(100) substrates by chemical beam epitaxy (1993) (4)
- Long wavelength InGaAsP/InP distributed feedback lasers grown by chemical beam epitaxy (1992) (4)
- Recent progress in growing reliable (AlGa)As DH lasers by molecular beam epitaxy for optical communication systems (1982) (4)
- 1.5 μm wavelength InGaAs/InGaAsP distributed feedback multi‐quantum‐well lasers grown by chemical beam epitaxy (1991) (4)
- A new lateral selective‐area growth by liquid‐phase epitaxy: The formation of a lateral double‐barrier buried‐heterostructure laser (1982) (4)
- Quantum‐switched heterojunction bistable bipolar transistor by chemical beam epitaxy (1990) (4)
- Carbon-doped InGaP/GaAs/InGaP Double Heterojunction Bipolar Transistors (1992) (4)
- Integrated electroabsorption modulators for WDM systems (1995) (4)
- Wavelength selective interlayer directionally grating-coupled InP/InGaAsP waveguide photodetection (1988) (4)
- Demonstration of monolithic optical injection locking using a two section DFB laser (2003) (4)
- Misfit stress‐induced compositional instability in hetero‐epitaxial compound semiconductor structures (1996) (4)
- Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As (1989) (4)
- 10 GHz colliding pulse mode locked laser with electrical and optical injection synchronization (2005) (4)
- Gigahertz bit rate analog to digital conversion with optical outputs using cleaved‐coupled‐cavity semiconductor lasers (1983) (4)
- Quantum well lasers in telecommunications (1992) (3)
- Wavelength division multiplexed (WDM) data-block switching for parallel computing and interconnects (1998) (3)
- Enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors grown by chemical beam epitaxy (1986) (3)
- Resonant tunneling in InGaAsInP double-barrier structures and superlattices (1988) (3)
- Summary Abstract: Molecular beam epitaxial growth of abrupt InAsSb/GaSb heterostructures and superlattices lattice‐matched to GaSb(100) (1986) (3)
- Application of gratings in fabricating arrays of superconducting and normal junctions (1974) (3)
- Photoluminescence and photoluminescence excitation study of electron-hole tunneling in In0.53Ga0.47As/InP coupled-single quantum wells (1988) (3)
- Multichannel operating characteristics of integrated coherent receivers for optical access networks (1997) (3)
- Multilongitudinal mode operation in angled stripe buried heterostructure lasers (1983) (3)
- Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy (1981) (3)
- InAs x P 1-x /InP photodiodes prepared by molecular-beam epitaxy (1984) (3)
- Output Coupling Induced Wavelength Shifts in Erbium-Doped Fiber Lasers (1993) (3)
- High-speed integrated DFB/electroabsorption modulated lasers (1996) (3)
- Monolayer control of chemical beam etching (1994) (3)
- Integrated laser/modulators for high capacity WDM transmission systems (1995) (3)
- Material growth technologies (1985) (3)
- High performance integrated coherent transceivers for optical access networks (1996) (2)
- Semiconductor injection lasers, II, light-emitting diodes (1985) (2)
- A very simple integrated coherent receiver with record high sensitivity (1996) (2)
- Semi‐insulating InP grown by chemical beam epitaxy with pentacarbonyliron doping (1995) (2)
- High reliability 1.3 /spl mu/m InP based uncooled lasers in non-hermetic packages (1996) (2)
- 119 -km, 420 Mb/s Transmission with a 1.55 µm Single-Frequency Laser (1983) (2)
- Monolithically Integratable Colliding Pulse Modelocked Laser Source for O-CDMA Photonic Chip Development (2008) (2)
- 10 Gbit/s penalty-free transmission over 48 km using 1.3-/spl mu/m wavelength electroabsorption modulated lasers (EML) for metro-loop transmission link (1996) (2)
- A full-duplex coherent communication system using integrated transceivers with counter-mixing scheme (1997) (2)
- Short pulse generation using semiconductor lasers (1992) (2)
- High-reliability nonhermetic 1.3-um InP-based uncooled lasers (1996) (2)
- New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 μm Wavelength Region (1982) (2)
- Summary Abstract: Reflection high‐energy electron diffraction intensity oscillation during the growth of GaAs by chemical‐beam epitaxy (1988) (2)
- Three-channel wavelength division multiplexing experiment in single-mode fiber at 432 Mbit/sec (1984) (2)
- Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs (1987) (2)
- A time-shared coherent access network capable of dynamic wavelength assignment and adjustable bandwidth partitioning (1998) (2)
- Effects of cation diffusion during chemical beam etching (1995) (2)
- Waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (1987) (2)
- Effects of cation diffusion on the monolayer control of chemical beam etching (1994) (2)
- Semiconductor Lasers and Photodetectors by Molecular Beam Epitaxy (1985) (2)
- Threshold current characteristics of GaAs lasers under short pulse excitation (1984) (2)
- Metal-Semiconductor-Metal Demultiplexing Waveguide Photodetectors in InGaAs /GaAs Quantum Well Structures by Selective Bandgap Tuning (1991) (2)
- Erratum: Delta‐doped ohmic contacts to n‐GaAs [Appl. Phys. Lett. 49, 292 (1986)] (1986) (1)
- Microfabrication using laser‐beam interferometric technique coupled with simultaneous exposure and development method (1975) (1)
- Optical measurement of surface recombination in InGaAs QW mesa structures (1988) (1)
- TA-B5 pulsations and absorbing defects in (Al,Ga)As injection lasers (1979) (1)
- In-situ dry etching of InP using phosphorus trichloride inside a chemical beam epitaxial growth chamber (1993) (1)
- MICROWAVE INTENSITY AND FREQUENCY MODULATION OF RIDGE-WAVEGUIDE-TYPE DFB LASERS (1984) (1)
- Pentacarbonyliron doping for semi-insulating InP by chemical beam epitaxy (1995) (1)
- Measurement of electron drift velocity in compositionally graded AlxGa1-xAs by time resolved optical picosecond reflectivity (1982) (1)
- Chemical Beam Epitaxy of III-V Semiconductors (1986) (1)
- Novel Optoelectronic Devices Prepared By Molecular Beam Epitaxy (1982) (1)
- Optical fiber spatial filtering technique for investigating carrier dynamics (1988) (1)
- Spectral Holeburning and Four-Wave Mixing in InGaAs/InP Quantum Wells (1989) (1)
- CHEMICAL BEAM EPITAXY OF III-V SEMICONDUCTOR HETEROSTRUCTURES (1987) (1)
- Packaging relaxed semiconductor lasers with diluted waveguide structure (1994) (1)
- Integrated optoelectronics: practicalities and potentials (2005) (1)
- Cleaved-Coupled-Cavity (C 3 ) Semiconductor Lasers (1984) (1)
- Optical measurement of ion implantation damage depth in multiple‐quantum‐well mesa structures (1991) (1)
- Gain-coupled long wavelength InGaAsP/InP distributed feedback lasers with quantum well gratings grown by chemical beam epitaxy (1992) (1)
- Photoinduced field modulation in multiquantum well heterostructures: A new photocurrent gain mechanism (1989) (1)
- RHEED Intensity Oscillation Studies of the Kinetics of GaAs Deposition During Chemical Beam Epitaxy(CBE) (1987) (1)
- Summary Abstract: Molecular beam epitaxy for semiconductor lasers operating at 0.61–20 μm (1985) (1)
- 1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy (1990) (1)
- Dispersion penalty free transmission over 130 km standard fiber using a 1.55 /spl mu/m, 10 Gb/s integrated EA/DFB laser with low extinction ratio and negative chirp (1996) (1)
- Summary Abstract: Atomic structure of semiconductor interfaces (1987) (1)
- Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser (1997) (1)
- Summary Abstract: Two‐dimensional hole gas at a semiconductor heterojunction (1980) (1)
- Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells (1989) (1)
- Wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy (1987) (1)
- Tunability of Intrinsic Stress in Sio x Dielectric Films Formed by Molecular Beam Deposition (1994) (1)
- Stabilization of Cleaved-Coupled- Cavity (C3) Lasers (1984) (1)
- Experimental and theoretical characterization of delta-doped quantum well field-effect transistors grown by gas-source molecular-beam epitaxy (1988) (1)
- Wavelength division multiplexed (WDM) electroabsorption modulated laser fabricated by selective area growth MOVPE techniques (1997) (1)
- In-Situ Dry Etching of InP Using Phosphorus Tri-Chloride and Re-Growth Inside a Chemical Beam Epitaxial Growth Chamber (1993) (1)
- Single-mode picosecond optical pulses generated by a semiconductor DFB laser with QW loss gratings (1992) (1)
- Low-threshold InGaAs/GaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers grown by chemical beam epitaxy (1993) (1)
- Erbium-doped semiconductor injection lasers: enhanced single-longitudinal-mode operation and 1.5-μm transmission experiment (1987) (0)
- Large Optical Nonlinearities in Room-Temperature GaAs-GaAlAs Multiple Quantum Well Structures (1982) (0)
- 16-channel × 100-GHz monolithically integrated O-CDMA transmitter with SPECTS encoder and seven 10-GHz mode-locked lasers (2010) (0)
- AℓxGa1-xAs/AℓyGa1-yAs Heterostructure Lasers Grown by Molecular Beam Epitaxy (1980) (0)
- 10-Gbit/s penalty-free optical transmission over 102.5 km of standard fiber using 1.3-/spl mu/m electroabsorption modulated laser and Raman amplifier (1996) (0)
- Observation of quantum well polarization effects in the photocurrent of multilayer diodes (1990) (0)
- Exciton Localization in In0.53Ga0.47As/InP Alloy Quantum Wells (1988) (0)
- Application of integrated active filters in multichannel optical communication systems (1997) (0)
- Interlayer-Directionally Grating-Coupled III-V ARROW Structures for Integrated Opto-electronics (1987) (0)
- Field effect transistor contact with a delta-doped ohmic. (1987) (0)
- Channel monitoring, control and equalisation of multichannel fibre transmission system by multisection integrated active filters (1998) (0)
- Lateral Optical Confinement in GaAs - Ga0.7Al0.3 As Heterostructure Waveguides Fabricated by Liquid-Phase Epitaxy Over Preferentially Etched Channels (1976) (0)
- IIB-3 new interdigitated pn junction device with novel capacitance-voltage characteristic and ultrahigh optical sensitivity (1982) (0)
- InGaAsP/InGaAs multi-quantum-well distributed-Bragg-reflector lasers grown by chemical beam epitaxy (1993) (0)
- Zinc doping of Ga 0 . 51 In 0 . 49 P grown on GaAs ( 100 ) substrates by chemical beam epitaxy (2014) (0)
- Reliable (AlGa)As DH Lasers Grown By Molecular Beam Epitaxy For Optical Communication Systems (1981) (0)
- Recent advances in chemical beam epitaxy for opto-electronic device applications (1993) (0)
- Recent developments in (AlGa)As DH lasers grown by molecular beam epitaxy for optical communication systems (1981) (0)
- Summary Abstract: InGaAsSb/AlGaAsSb double heterostructure laser prepared by molecular beam epitaxy (1987) (0)
- Exciton Localization in In 0.53 Ga 0.47 As/InP Alloy Quantum Wells (1988) (0)
- High-Reliability 1.3-p Lasers in Nonherme (1996) (0)
- Junction Arrays for Superconducting Application. (1977) (0)
- Future Iightwave Networks And Devices (1997) (0)
- Monolayer control of chemical beam etching for regrowth (1994) (0)
- Arrangements which include a doped semiconductor material (1992) (0)
- Carrier lifetime reduction in GaInAs/InP multiple quantum well mesa structures (1990) (0)
- Semiconductor lasers: A choice structure for lightwave communications (1985) (0)
- Ultra High Gain Ga0.47 In0.53 As Photoconductive Detectors Grown by Chemical Beam Epitaxy (1986) (0)
- Chemical beam epitaxy for opto-electronics and electronics applications (2008) (0)
- (AlGa)As DH lasers grown by molecular beam epitaxy for optical communication systems (1980) (0)
- Quantum size effect in delta-doped AlGaAs heterostructures (1988) (0)
- High Reflectivity, 1.55/spl mu/m InP/lnGaAsP Surface-emitting-laser Mirror Grown By Chemical Beam Epitaxy (1991) (0)
- Chemical Beam Epitaxy of GalnP on GaAs(l 00) Substrates and its Application to 0.98μm Lasers (1992) (0)
- Zinc doping of Ga o . 51 ino . 4 sP grown on GaAs ( lQ 0 ) substrates by chemica beam epitaxy (1999) (0)
- Long-Wavelength InGaAsPDnP Multiquantum Well Distributed Feedback and Distributed Bragg Reflector Lasers Grown by Chemical Beam Epitaxy (2004) (0)
- Enhancements in Two Dimensional Electron Gas Density and Mobility in δ-Doped AiGaAs Heterostructures (1987) (0)
- TA-B1 very low current-threshold GaAs-AlxGa1-xAs double-heterostructure lasers grown by molecular beam epitaxy (1979) (0)
- Nonlinear spectroscopy in InGaAs/InP multiple quantum wells (1987) (0)
- InGaAshGaAsP integrated tunable detector grown by chemical beam epitaxy (1999) (0)
- IIIA-7 measurement of high electron drift velocity in a submicron heavily doped graded GAP Al<inf>x</inf>Ga<inf>1-x</inf>As layer (1983) (0)
- High-speed optoelectronic sources for multi-gigabit communication links (1994) (0)
- A new InGaAs/InGaAsP delta -strained multiple-quantum-well laser grown by chemical-beam epitaxy (1991) (0)
- IIIA-1 gain and carrier lifetime measurement in AlGaAs quantum well lasers (1983) (0)
- 1 . 5 m wavelength InGaAs / InGaAsP distributed feedback multiquantumwell lasers grown by chemical beam epitaxy (2014) (0)
- VB-7 InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical-beam epitaxy (1987) (0)
- GaInP cladding layers grown by chemical beam epitaxy (2004) (0)
- Nonlinear Optical Logic Etalon at Todays Fiber Communication Wavelengths (1987) (0)
- Emitting far field pattern study of long wavelength grating coupling surface emitting lasers (1994) (0)
- A bird’s eye assessment of the Japanese optoelectronics: semiconductor lasers, LEDs, and integrated optics (2008) (0)
- Optical Clock Recovery Operation of a Colliding-Pulse Mode-Locked Laser Diode with Integrated Active-Passive Waveguides (2006) (0)
- Very low threshold long wavelength surface emitting lasers (1994) (0)
- Dynamic single mode semiconductor laser for optical communications (1984) (0)
- GaAs-Ga$sub 1$/sub hyphen//sub xAl/sub x/As double-heterostructure injection lasers with distributed Bragg reflectors (1976) (0)
- Introduction to the issue on optoelectronic materials and processing (1997) (0)
- The Effect of Growth Temperature Instability in the CBE Growth of ln/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/lnP Multiple Quantum Well Structures (1992) (0)
- Semiconductor lasers for WDM systems and beyond (1999) (0)
- Design, Fabrication And Performance Of A Very High Side-mode-suppression-ratio Distributed-Bragg-reflector Laser (1992) (0)
- Growth and device applications using molecular beam epitaxy (1979) (0)
- Epitaxial growth and optoelectronics (1995) (0)
- Optical measurement of ambipolar carrier diffusivity in direct-gap semiconductors (1988) (0)
- In-situ monolayer etching and regrowth of InP/InGaAsP (1995) (0)
- Summary Abstract: A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy (1988) (0)
- Simple-structure integrated coherent transceiver with novel counter-receiving heterodyne detection scheme (1999) (0)
- SUBPICOSECOND LUMINESCENCE STUDY OF ELECTRON AND HOLE CAPTURE IN QUANTUM WELLS (1988) (0)
- Counter-mixing mode integrated heterodyne transceivers (1997) (0)
- The preparation of low current-threshold infra-red-visible (0.89-0.72&#181;m) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy (1979) (0)
- VIA-1 very low dark current and high quantum efficient InGaAs/InP p-i-n photodiodes grown by chemical-beam epitaxy (1986) (0)
- IIIA-7 measurement of high electron drift velocity in a submicron heavily doped graded GAP Al x Ga 1-x As layer (1983) (0)
- Chemical Beam Etching With Monolayer Control (1994) (0)
- Recent advances in chemical beam epitaxy (1992) (0)
- Chemical Beam Etching and Epitaxy with Atomic Scale Control and Instant Switching between Etching and Epitaxy (1995) (0)
- Light-emitting diode having stripe geometry and manufacturing process here for (1978) (0)
- Quantumswitched heterojunction bistable bipolar transistor by chemical beam epitaxy (2014) (0)
- An Integrated Four-channel Tunable Distributed-feedback Laser Array (1997) (0)
- Multi-wavelength laser array by chemical beam epitaxy on patterned InP substrates (1993) (0)
- Masked Molecular Beam Epitaxy (1978) (0)
- Future Prospects of Opto-Electronic Devices and Processings (1991) (0)
- Observation of optical Stark shift in InGaAs/InP multiple quantum wells (1987) (0)
- DFB LASERS: SET TO PROFIT FROM FIBER OPTIC ADVANCES. (1986) (0)
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