Yan‐kuin Su
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Physics
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(Suggest an Edit or Addition)Yan‐kuin Su's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- InGaN-GaN multiquantum-well blue and green light-emitting diodes (2002) (238)
- 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes (2002) (218)
- High-transparency Ni/Au ohmic contact to p-type GaN (1999) (215)
- Ultraviolet photodetectors based on selectively grown ZnO nanorod arrays (2009) (174)
- Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering (2004) (157)
- Compact and Low Loss Dual-Band Bandpass Filter Using Pseudo-Interdigital Stepped Impedance Resonators for WLANs (2007) (155)
- Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes (2002) (152)
- Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN (1998) (147)
- Carbon nanotube-based ultrasensitive multiplexing electrochemical immunosensor for cancer biomarkers. (2011) (137)
- Highly reliable nitride-based LEDs with SPS+ITO upper contacts (2003) (133)
- ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes (2006) (130)
- Nonvolatile Bio-Memristor Fabricated with Egg Albumen Film (2015) (120)
- InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts (2003) (109)
- GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes (2002) (100)
- Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering (2006) (98)
- Nitride-based LEDs fabricated on patterned sapphire substrates (2003) (94)
- GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals (2000) (90)
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps (2003) (87)
- The effect of thermal annealing on the Ni/Au contact of p-type GaN (1998) (86)
- ZnO Nanobridge Array UV Photodetectors (2010) (81)
- Study of organic thin film transistor with polymethylmethacrylate as a dielectric layer (2007) (80)
- Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser (1987) (77)
- ZnO MSM photodetectors with Ru contact electrodes (2005) (76)
- The effect of solvent on the etching of ITO electrode (2004) (75)
- Automated passive filter synthesis using a novel tree representation and genetic programming (2006) (71)
- Pattern-size dependence of characteristics of nitride-based LEDs grown on patterned sapphire substrates (2009) (66)
- Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique (2000) (65)
- Electrodeposition and characterization of transparent ZnO thin films (2005) (65)
- A Hairpin Line Diplexer for Direct Sequence Ultra-Wideband Wireless Communications (2007) (64)
- High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures (2002) (63)
- Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs (2004) (63)
- Photoluminescence study of gallium antimonide grown by liquid‐phase epitaxy (1989) (63)
- High detectivity InGaN-GaN multiquantum well p-n junction photodiodes (2003) (63)
- Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases (1999) (59)
- Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface (2004) (59)
- In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer (2003) (58)
- Efficiency enhancement in GaAs solar cells using self-assembled microspheres. (2009) (57)
- ZnO ultraviolet photodiodes with Pd contact electrodes (2007) (57)
- Nitride-based LEDs with p-InGaN capping layer (2003) (56)
- Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition (2004) (55)
- Growth of nanoscale InGaN self-assembled quantum dots (2003) (55)
- Nitride-based near-ultraviolet LEDs with an ITO transparent contact (2004) (54)
- ICP etching of sapphire substrates (2005) (53)
- InGaN/GaN tunnel-injection blue light-emitting diodes (2002) (52)
- n ¿ -GaN formed by Si implantation into p-GaN (2002) (51)
- Photo-CVD SiO/sub 2/ layers on AlGaN and AlGaN-GaN MOSHFET (2003) (50)
- The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates (2010) (49)
- Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects (2019) (49)
- Photoluminescence spectroscopy of Mg-doped GaN (1998) (48)
- GaN Schottky barrier photodetectors with a low-temperature GaN cap layer (2003) (47)
- High power nitride based light emitting diodes with Ni/ITO p-type contacts (2003) (43)
- Planar GaN n ¿ - p photodetectors formed by Si implantation into p-GaN (2002) (43)
- InGaN/GaN multi-quantum dot light-emitting diodes (2004) (42)
- GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography (2008) (42)
- Studies of InGaN∕GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition (2004) (42)
- Ion-sensitive field-effect transistor with silicon nitride gate for pH sensing (1989) (42)
- Intersubband Transitions in Quantum Wells: Physics and Devices (1998) (41)
- Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces (2000) (40)
- Characterization of Cu doped CdSe thin films grown by vacuum evaporation (2001) (40)
- Loss characteristics of silicon substrate with different resistivities (2006) (40)
- InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering (2003) (38)
- Design of the Compact Parallel Coupled Wideband Bandpass Filter With Very High Selectivity and Wide Stopband (2007) (36)
- Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer (2003) (36)
- Luminescence of an InGaN/GaN multiple quantum well light-emitting diode (2000) (35)
- Synthesis of nano-scaled yttrium aluminum garnet phosphor by co-precipitation method with HMDS treatment (2005) (35)
- Effect of r.f. sputtering parameters on ZnO films deposited onto GaAs substrates (1987) (35)
- Photo-enhanced chemical wet etching of GaN (2002) (35)
- Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. (2017) (35)
- Raman spectra of Si-implanted GaSb (1990) (35)
- Liquid‐phase‐epitaxial growth of In0.49Ga0.51P on (100) GaAs by a supercooling method (1985) (35)
- Indium tin oxide ohmic contact to highly doped n-GaN (1999) (35)
- GaN MSM photodetectors with TiW transparent electrodes (2004) (34)
- DESIGN OF THE COMPACT PARALLEL-COUPLED LINES WIDEBAND BANDPASS FILTERS USING IMAGE PARAMETER METHOD (2010) (34)
- Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide (2005) (33)
- Ultra-small amorphous MoS2 decorated reduced graphene oxide for supercapacitor application (2020) (32)
- Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures (2004) (32)
- 3~5 GHz Cascoded UWB Power Amplifier (2006) (32)
- Single-Layered Hybrid DBPPV-CdSe–ZnS Quantum-Dot Light-Emitting Diodes (2008) (32)
- Transparent TiN Electrodes in GaN Metal–Semiconductor–Metal Ultraviolet Photodetectors (2002) (32)
- High responsivity of GaN p - i - n photodiode by using low-temperature interlayer (2007) (32)
- Effects of NaCl flux on microstructure and luminescent characteristics of KSrPO4:Eu2+ phosphors (2012) (31)
- Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique (2000) (31)
- AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide (2002) (31)
- The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy (2011) (30)
- Electrical and optical properties of high purity In0.5Ga0.5P grown on GaAs by liquid-phase epitaxy (1986) (30)
- Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source (1981) (29)
- Si and Zn co-doped InGaN-GaN white light-emitting diodes (2003) (29)
- Acceptor activation of Mg-doped GaN by microwave treatment (2001) (29)
- Effects of trimethylantimonide/triethylgallium ratios on epilayer properties of gallium antimonide grown by low‐pressure metalorganic chemical vapor deposition (1990) (29)
- Tellurium and zinc doping in In0.5Ga0.5P grown by liquid‐phase epitaxy (1985) (28)
- AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts (2004) (28)
- Three-Band White Light-Emitting Diodes Based on Hybridization of Polyfluorene and Colloidal CdSe–ZnS Quantum Dots (2010) (28)
- High UV/visible rejection contrast AlGaN/GaN MIS photodetectors (2006) (27)
- ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates (2005) (27)
- Buckling instabilities in GaN nanotubes under uniaxial compression (2005) (27)
- A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition (2003) (27)
- Novel Red-Emitting Microwave-Assisted-Sintered LiSrPO4: Eu3+ Phosphors for Application in Near-UV White Light-Emitting Diodes (2013) (27)
- Improvement in the Light Output Power of GaN-Based Light-Emitting Diodes by Natural-Cluster Silicon Dioxide Nanoparticles as the Current-Blocking Layer (2009) (26)
- InGaN/GaN blue light-emitting diodes with self-assembled quantum dots (2004) (26)
- Improved light-output power of GaN LEDs by selective region activation (2004) (26)
- High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact (2003) (26)
- Poly(methyl methacrylate) Dielectric Material Applied in Organic Thin Film Transistors (2008) (25)
- Organic thin-film Transistors with N2 Doping (2005) (25)
- A novel triple-band bandpass filter using Multilayer-based substrates for WiMAX (2007) (25)
- The charge transfer transition phenomenon and microstructure of Eu3+-doped NaCaPO4 phosphors sintered with NH4Cl flux via solid-state reaction (2013) (25)
- Semitransparent Field-Effect Transistors Based on ZnO Nanowire Networks (2011) (25)
- High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier (1998) (25)
- InGaN quantum dot photodetectors (2003) (24)
- Deposition of SiO2 Layers on GaN by Photochemical Vapor Deposition (2003) (24)
- Dependence of ZnO films on sputtering parameters and saw device on ZnO/InP (1989) (24)
- Effect of the different concentrations of Eu3+ ions on the microstructure and photoluminescent properties of Zn2SiO4:xEu3+ phosphors and synthesized with TEOS solution as silicate source (2013) (24)
- Nitride-based green light-emitting diodes with high temperature GaN barrier layers (2003) (24)
- New Triple-Passband Bandpass Filter Using Multipath Stub Loaded Resonators (2016) (23)
- Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts (2005) (23)
- Strain-Compensated GaAsN/InGaAs Superlattice Structure Solar Cells (2006) (23)
- The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector (2018) (23)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy (2002) (23)
- InGaN/GaN light emitting diodes with a p-down structure (2002) (22)
- Negative differential resistance behavior and memory effect in laterally bridged ZnO nanorods grown by hydrothermal method. (2014) (22)
- On the Carrier Concentration and Hall Mobility in GaN Epilayers (2002) (22)
- Contact resistance in metal-semiconductor systems☆ (1979) (22)
- Transparent ZnO Nanowire-Network Ultraviolet Photosensor (2011) (22)
- The fabrication and characterisation of ion-sensitive field-effect transistors with a silicon dioxide gate (1986) (22)
- Improved Light Output of Nitride-Based Light-Emitting Diodes by Lattice-Matched AlInN Cladding Structure (2008) (22)
- Electrical and optical properties of heavily doped Mg- and Te-GaAs grown by liquid-phase epitaxy (1988) (22)
- Characteristics of coplanar waveguide on lithium niobate crystals as a microwave substrate (2007) (21)
- A simple method for fabrication of high speed vertical cavity surface emitting lasers (2004) (21)
- The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors (2003) (21)
- Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN (2005) (21)
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer (2003) (21)
- High hole concentration of p-type InGaN epitaxial layers grown by MOCVD (2006) (21)
- Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors (2006) (21)
- GaN Schottky barrier photodetectors with SiN∕GaN nucleation layer (2007) (21)
- Nitride-based blue LEDs with GaN/SiN double buffer layers (2003) (21)
- Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure (2003) (20)
- Improving Performance and Reducing Amount of Phosphor Required in Packaging of White LEDs With ${\rm TiO}_{2}$ -Doped Silicone (2014) (20)
- Stable and highly bright white organic light-emitting diode based on 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine (2006) (20)
- TiO2 Nano Flowers Based EGFET Sensor for pH Sensing (2019) (20)
- Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask (2012) (20)
- The influences of refractive index dispersion on the modal gain of a quantum-well laser (1997) (20)
- Effect of substrate temperature on the properties of SiO2/InP structure prepared by photochemical vapor deposition (1990) (20)
- Resonant properties of the Sierpinski‐based fractal resonator and its application on low‐loss miniaturized dual‐mode bandpass filter (2009) (19)
- Inductively coupled plasma etching of GaN using Cl2/He gases (2003) (19)
- GaN UV photodetector by using transparency antimony-doped tin oxide electrode (2007) (19)
- Solution-Processable MoOx for Efficient Light-Emitting Diodes Based on Giant Quantum Dots (2016) (18)
- An Integrated Thermal Compensation System for MEMS Inertial Sensors (2014) (18)
- Compact dual‐band bandpass filter with enhanced feed coupling structures (2007) (18)
- Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer (2003) (18)
- A study of current transport in p-N heterojunctions (1992) (18)
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors (2003) (18)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes (2003) (18)
- Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes (2006) (18)
- 4H-SiC metal–semiconductor–metal ultraviolet photodetectors with Ni/ITO electrodes (2002) (17)
- High luminous efficiency thin‐film electroluminescent devices with low resistivity insulating materials (1992) (17)
- Low-Frequency Noise Performance of Al-Doped ZnO Nanorod Photosensors by a Low-Temperature Hydrothermal Method (2017) (17)
- Effects of different buffer layers in flexible organic light-emitting diodes (2008) (17)
- The fabrication of single heterojunction AlGaAs/InGaP electroluminescent diodes (1987) (17)
- Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge, Si and GaAs (1979) (17)
- A Nanocrystalline Silicon Surface-Passivation Layer on an HR-Si Substrate for RFICs (2011) (17)
- Antireflective and Radiation Resistant ZnO Thin Films for the Efficiency Enhancement of GaAs Photovoltaics (2011) (17)
- Enhanced Field Emission Properties of Ag Nanoparticle-Decorated ZnO Nanorods Under Ultraviolet Illumination (2015) (17)
- GaN MOSFET with liquid phase deposited oxide gate (2002) (17)
- Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes (2008) (17)
- InGaN/GaN MQW p–n junction photodetectors (2002) (17)
- Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer (2013) (16)
- Nano epitaxial growth of GaAs on Si (001) (2011) (16)
- Fullerene and Pentacene as a Pure Organic Connecting Layer in Tandem Organic Light Emitting Devices (2010) (16)
- Energy levels of GaSb grown by metalorganic chemical vapor deposition (1993) (16)
- Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process (2011) (16)
- Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique (2012) (16)
- Density-controlled and seedless growth of laterally bridged ZnO nanorod for UV photodetector applications (2014) (16)
- The optimum sintering condition for KSrPO4:Eu3+ phosphors applied in WLEDs (2017) (16)
- Effect of annealing and γ-irradiation on the properties of CuInSe2 thin films (2000) (16)
- Design of Compact and Sharp-Rejection Ultra Wideband Bandpass Filters Using Interdigital Stepped-Impedance Resonators (2007) (16)
- Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor (2008) (16)
- Improving thermal stability of KSrPO4:Tb3+ phosphors prepared by microwave assisted sintering (2013) (16)
- Investigation of Sn‐doped GaAs epilayers grown by low pressure metal‐organic chemical vapor deposition (1983) (16)
- A compact narrow‐band microstrip bandpass filter with a complementary split‐ring resonator (2006) (16)
- Discussion on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer (2010) (16)
- Electrical properties of Al/n-GaSb contacts (1989) (15)
- Structural analysis of nitride‐based LEDs grown on micro‐ and nano‐scale patterned sapphire substrates (2010) (15)
- GaN nanocolumns formed by inductively coupled plasmas etching (2005) (15)
- Enhanced Light Extraction Using Blue LED Package Consisting of ${\rm TiO}_{2}$ -Doped Silicone Layer and Silicone Lens (2014) (15)
- The mechanism of efficiency enhancement with proper thickness of DPVBi layer for blue organic light-emitting devices (BOLED) (2009) (15)
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector (2005) (15)
- The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer (2015) (15)
- Studies of interband transitions and thermal annealing effects on ion-implented (100) GaSb by photoreflectance and Raman spectra (1991) (15)
- Fluorescent oligomers of dibenzothiophene-S,S-dioxide derivatives: The interplay of crystal conformations and photo-physical properties (2012) (15)
- DC and RF Degradation Induced by High RF Power Stresses in 0.18- $\mu\hbox{m}$ nMOSFETs (2010) (15)
- Gender issues and computers: college computer science education in Taiwan (2005) (15)
- Photoelectrical and Noise Characteristics of ZnO Nanowire Networks Photosensor (2011) (15)
- AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures (2010) (15)
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts (2003) (14)
- Fabrication of low-loss thin film microstrip line on low-resistivity silicon for RF applications (2007) (14)
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure (2004) (14)
- High brightness OLED with dual emitting layers (2007) (14)
- Investigation of etch characteristics of non-polar GaN by wet chemical etching (2010) (14)
- Passivation with SiO2 on HgCdTe by direct photochemical‐vapor deposition* (1994) (14)
- Nitride-based 2DEG photodetectors with a large AC responsivity (2003) (14)
- The Optimized Geometry of the SiGe HBT Power Cell for 802.11a WLAN Applications (2007) (14)
- Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing (2017) (14)
- AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact (2010) (14)
- Investigation of Green Up‐Conversion Behavior in Y6W2O15:Yb3+,Er3+ Phosphor and its Verification in 973‐nm Laser‐Driven GaAs Solar Cell (2012) (14)
- AlGaInP-sapphire glue bonded light-emitting diodes (2002) (14)
- In0.11Ga0.89N‐based p‐i‐n photodetector (2009) (13)
- High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer (2005) (13)
- Bias voltage-controlled ferromagnetism switching in undoped zinc oxide thin film memory device (2016) (13)
- Practical Passive Filter Synthesis Using Genetic Programming (2005) (13)
- The Effect of Ga Doping Concentration on the Low-Frequency Noise Characteristics and Photoresponse Properties of ZnO Nanorods-Based UV Photodetectors (2015) (13)
- Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping (2009) (13)
- Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells (1998) (13)
- Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS (1999) (13)
- 1/f noise and specific detectivity of HgCdTe photodiodes passivated with ZnS-CdS films (1999) (13)
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers (2004) (13)
- Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates (2005) (13)
- Nitride-based green light emitting diodes grown by temperature ramping (2003) (13)
- Characterization of epitaxial In0.75Ga0.25As0.56P0.44 layers on InP grown by liquid phase epitaxy (1984) (13)
- Tunnelling efficiency of n + -InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes (2003) (13)
- AlGaInP light emitting diode with a current-blocking structure (2005) (12)
- A new compact quad‐band bandpass filter using quad‐mode stub loaded resonator (2014) (12)
- Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure (2011) (12)
- Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition (1992) (12)
- Heteroepitaxial growth of gallium antimonide on GaAs by low pressure MOVPE (1991) (12)
- High bright white organic light-emitting diode based on mixing orange and blue emission (2006) (12)
- Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells (2007) (12)
- Design of a compact microstrip triplexer for multiband applications (2007) (12)
- The characteristics of different transparent electrodes on GaN photodetectors (2003) (12)
- Light Output Improvement of AlGaInP-Based LEDs With Nano-Mesh ZnO Layers by Nanosphere Lithography (2010) (12)
- Influence of growth temperature upon the In solid composition in InxGa1−xSb epilayers grown by metalorganic chemical vapor deposition (1991) (12)
- Polymer light-emitting devices using poly(ethylene oxide) as an electron injecting layer (2010) (12)
- Temperature effect on the growth of strained GaAs1−ySby/GaAs (y>0.4) quantum wells by MOVPE (2008) (11)
- Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy (1998) (11)
- Ultrathin PVK charge control layer for advanced manipulation of efficient giant CdSe@ZnS/ZnS quantum dot light-emitting diodes (2018) (11)
- Noise Properties of Ag Nanoparticle-Decorated ZnO Nanorod UV Photodetectors (2016) (11)
- Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures (1999) (11)
- Scattering lifetimes due to interface roughness with large lateral correlation length in AlxGa1¿xN'GaN two-dimensional electron gas (2002) (11)
- GaN MIS Capacitors with Photo-CVD SiN x O y Insulating Layers (2005) (11)
- Optical properties in InGaN/GaN multiple quantum wells and blue LEDs (2000) (11)
- The doping concentration dependence of the zinc acceptor ionization energy in In0.49Ga0.51P (1985) (11)
- Window layer for current spreading in AlGaInP light‐emitting diode (1994) (11)
- Hybrid light-emitting diodes from anthracene-contained polymer and CdSe/ZnS core/shell quantum dots (2014) (11)
- Design of Compact Six-Channel Diplexer (2016) (11)
- GaSb/InGaSb strained-layer quantum wells by MOCVD (1992) (11)
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice (2003) (11)
- Improvement of Light Intensity for Nitride-Based Multi-Quantum Well Light Emitting Diodes by Stepwise-Stage Electron Emitting Layer (2010) (11)
- Observation of self-organized superlattice in AlGaInAsSb pentanary alloys (2003) (11)
- Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes (2014) (11)
- Zinc doping in gallium antimonide grown by low‐pressure metal‐organic chemical vapor deposition (1993) (10)
- High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy (1999) (10)
- Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal‐organic chemical vapor deposition (1983) (10)
- Propagation characteristics of complementary split‐ring resonator for wide bandgap enhancement in microstrip bandpass filter (2007) (10)
- Ohmic Contacts of AuGeNi and Ag/AuGeNi to n-GaSb with Various Sintering Temperatures (1991) (10)
- A right slotted patch dual‐mode dual band bandpass filter used for WLAN (2009) (10)
- Deposition of SiO2 layers on 4H–SiC by photochemical vapor deposition (2003) (10)
- Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition (2010) (10)
- Economical passive filter synthesis using genetic programming based on tree representation (2005) (10)
- Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm (2005) (10)
- Enhanced light output of InGaN LEDs with a roughened p-GaN surface using different TMGa flow rates in p-AlGaN layer (2010) (10)
- Spurious Suppression of a Parallel Coupled Microstrip Bandpass Filter with Simple Ring EBG Cells on the Middle Layer (2006) (10)
- Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers (2011) (10)
- Characterization of p-GaAs by low pressure MOCVD using DEZ as dopant (1984) (10)
- Violet electroluminescence from poly( N-vinylcarbazole)/ZnO-nanrod composite polymer light-emitting (2011) (10)
- White Light Emission From DBPPV and CdSe/ZnS Quantum Dots Dually Hybridized on InGaN Light-Emitting Diodes (2008) (10)
- ZnO Nanoneedles/ZnO:Al Film Stack as an Anti-Reflection Layer for High Efficiency Triple Junction Solar Cell (2012) (10)
- InN grown on GaN/sapphire templates at different temperatures by MOCVD (2007) (10)
- Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles (2006) (10)
- Ohmic contact to p-ZnSe and p-ZnMgSSe (1999) (10)
- A microstrip ring‐like diplexer for bluetooth and UWB application (2009) (10)
- Compositional and electrical properties of InSb MOS structure (1991) (10)
- Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate (2012) (10)
- Photoconductive Gain and Low-Frequency Noise Characteristics of ZnO Nanorods (2011) (10)
- Growth of ultra small self-assembled InGaN nanotips (2004) (10)
- Novel multipeak current-voltage characteristics of series-connected negative differential resistance devices (1998) (10)
- Enhanced Performance of Polymer Light Emitting Devices Using Zinc Oxide Nanoparticle with Poly(vinylcarbazole) (2010) (9)
- Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy (2009) (9)
- Study of Electrical Characteristics of GaN-Based Photovoltaics With Graded In$_{x}$ Ga$_{1-{x}}$ N Absorption Layer (2011) (9)
- A fully integrated circuit for MEMS vibrating gyroscope using standard 0.25um CMOS process (2011) (9)
- Design of a miniature and harmonic control patch dual‐mode bandpass filter with transmission zeros (2008) (9)
- A novel GaAsN/InGaAs strain-compensated multi-quantum wells solar cell (2007) (9)
- New method of modelling a multipeak resonant tunnelling diode (1994) (9)
- Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN (2013) (9)
- Characterization of the InAsSb/GaSb superlattices by Fourier transform infrared spectroscopy (2003) (9)
- AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers (2005) (9)
- Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga (2019) (9)
- Generalized formula for the stability and instability criteria of current-voltage characteristics measurements in the negative differential conductance region of a resonant tunneling diode (1997) (9)
- The annealing effects on ZnCdSe/ZnSe quantum wells and ZnSe/GaAs interfaces (1998) (9)
- Tetrachromatic Hybrid White Light-Emitting Diodes and the Energy Transfer Between Conjugated Polymers and CdSe/ZnS Quantum Dots (2009) (9)
- ELECTRICAL DERIVATIVE CHARACTERISTICS OF ION-IMPLANTED AlGaInP/GaInP MULTI-QUANTUM WELL LASERS (1998) (9)
- AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology (1996) (8)
- Gan p-i-n photodetectors with an LT-GaN interlayer (2008) (8)
- Enhanced ESD properties of GaN-based light-emitting diodes with various MOS capacitor designs (2010) (8)
- A concurrent dual-band mixer with on-wafer balun for multi-standard applications (2008) (8)
- Micro-Chip Shaping for Luminance Enhancement of GaN Micro-Light-Emitting Diodes Array (2014) (8)
- Design of a compact CPW bandpass filter used for UWB application (2009) (8)
- Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE (2008) (8)
- A concurrent dual-band folded-cascode mixer using a LC-tank biasing circuit (2012) (8)
- Influence of InGaN channel thickness on electrical characteristics of AlGaN/InGaN/GaN HFETs (2006) (8)
- Microstructure and electrical properties of (Zr, Sn)TiO 4 thin film deposited on Si(1 0 0) using a sol-gel process (2006) (8)
- Degeneration of CMOS Power Cells After Hot-Carrier and Load Mismatch Stresses (2008) (8)
- High transconductance nitride MOSHFETs (2004) (8)
- Reactive ion etching of ZnS films for thin-film electroluminescent devices (1997) (8)
- Characteristics of ZnS thin films etched by reactive ion etching (1995) (8)
- A parallel coupled‐line bandpass filter with wide stopband using slotted ground structures (2007) (8)
- AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier (2005) (8)
- Quality Improvement of GaN on Si Substrate for Ultraviolet Photodetector Application (2014) (8)
- InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer (2004) (8)
- Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy (1999) (8)
- Effects of TiO2-doped silicone encapsulation material on the light extraction efficiency of GaN-based blue light-emitting diodes (2014) (8)
- Observation of quantum confined Stark effect in InxGa1-xAs/GaAs single–quantum well by photoreflectance spectroscopy (1995) (8)
- Effect of Post Annealing on Performance of Polymer Light-Emitting Devices (2005) (8)
- A comparative study of blue, green and yellow light emitting diode structures grown by metal organic chemical vapor deposition (2006) (8)
- Two-step epitaxial lateral overgrowth of GaN (2003) (8)
- Equivalent Lumped Elements of DC-Biased Thin Film Microstrip Line in MMICs (2007) (8)
- Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy (2010) (8)
- The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-Emitting Diodes for Color Conversion (2008) (8)
- Electron Emission Enhanced Properties of Gold Nanoparticle-Decorated ZnO Nanosheets Grown at Room Temperature (2018) (8)
- Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers (2003) (8)
- Nitride-based light emitting diodes with Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short period superlattice tunneling contact layer (2003) (8)
- The effect of a temperature-varying sandwich buffer layer structure on GaN epitaxial layer grown on Si substrate (2013) (7)
- Polarity-controllable MoS2 transistor for adjustable complementary logic inverter applications (2020) (7)
- Observation of spontaneous ordering in the optoelectronic material GaInNP (2004) (7)
- Ultra small self-organized nitride nanotips (2005) (7)
- Novel Ga-ZnO Nanosheet Structures Applied in Ultraviolet Photodetectors (2014) (7)
- High quality undoped n‐type GaSb epilayers by low‐temperature metalorganic chemical vapor deposition (1993) (7)
- Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow (2010) (7)
- Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application (2012) (7)
- Investigation of Se-doped GaAs epilayers grown by low-pressure metal-organic chemical vapor deposition (1986) (7)
- Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode (2002) (7)
- Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes (1999) (7)
- Amorphous MgInO Ultraviolet Solar-Blind Photodetectors (2019) (7)
- Improved Stopband of the Dual-Mode Ring Bandpass Filter Using Periodic Complementary Spilt-Ring Resonators (2006) (7)
- Heteroepitaxy for GaAs on Nanopatterned Si (001) (2012) (7)
- Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer multilayer dielectric (2011) (7)
- InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers (2004) (7)
- AlGaInP multiquantum well light-emitting diodes (1997) (7)
- The crystallinity of ZnS thin films prepared by MOCVD (1993) (7)
- InGaAsP/InP high-power semi-insulating blocked planar buried-heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy (1987) (7)
- High performance aluminum arsenic intraband resonant microwave devices (2008) (7)
- Simulation and Analysis of Negative Differential Resistance Devices and Circuits by Load-line Method and PSPICE (1998) (7)
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer (2005) (7)
- Metalorganic chemical vapor deposition of ZnSe thin films on ITO/glass substrates (1993) (7)
- Photosensitivity of Field-Effect Transistors Based on ZnO Nanowire Networks (2011) (7)
- AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm (2009) (7)
- Multi-peak NDR and high PVCR in GaAs/InGaAs/InAs multi-stepped quantum well resonant interband tunnelling diodes (1996) (7)
- Cesium Azide—An Efficient Material for Green Light-Emitting Diodes With Giant Quantum Dots (2015) (7)
- Ir/Pt Schottky contact oxidation for nitride‐based Schottky barrier diodes (2007) (6)
- Characteristics of Copper Indium Diselenide Thin Films Formed on Flexible Substrates by Electrodeposition (2005) (6)
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation (1995) (6)
- Performance degeneration of CMOS RF power cells after hot-carrier and load mismatch stresses (2007) (6)
- Characterization of the post-thermal annealing effect for p-GaAs/i-InGaAsN/n-GaAs hetero-junction solar cells (2012) (6)
- Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers (2012) (6)
- Nitride-Based Dual-Stage MQW LEDs (2007) (6)
- InGaN/GaN multiple‐quantum‐well dual‐wavelength near‐white light emitting diodes (2003) (6)
- The structural and optical characterization of a new class of dilute nitride compound semiconductors: GaInNP (2004) (6)
- Metalorganic Vapor Phase Epitaxy Growth of m-Plane GaN Using LiAlO2 Substrates (2008) (6)
- Improvement in External Quantum Efficiency of InGaN-Based LEDs by Micro-Textured Surface with Different Geometric Patterns (2011) (6)
- Nitride-based multiquantum well p-n junction photodiodes (2003) (6)
- Homogeneous ZnO nanostructure arrays on GaAs substrates by two-step chemical bath synthesis (2012) (6)
- High-Efficiency Polymer Photovoltaic Devices With Glycerol-Modified Buffer Layer (2008) (6)
- High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes (2003) (6)
- Further Improvement in the Light Output Power of InGaN-Based Light Emitting Diodes by Patterned Sapphire Substrate with KOH Wet-Chemical Etching on Sidewall (2012) (6)
- Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)2(CdSe)n short-period-superlattices multiple quantum wells (1999) (6)
- An improved multipeak resonant tunneling diode model for nine-state resonant tunneling diode memory circuit simulation (1995) (6)
- Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD (2006) (6)
- Temperature dependence of the optical properties on GaInNP (2004) (6)
- Well-defined electrical properties of high-strain resonant interband tunneling structure (2008) (6)
- Design of parallel coupled‐line microstrip wideband bandpass filter using stepped‐impedance resonators (2007) (6)
- Oxygen‐Vacancy Induced Resistive Switching Effect in Mn‐Doped ZnO Memory Devices (2018) (6)
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions (2006) (6)
- Modeling current-voltage and hysteretic current-voltage characteristics with two resonant tunneling diodes connected in series (1997) (6)
- Crystallinity of ZnS: Tb,F thin films on green thin film electroluminescent devices prepared by RF-magnetron sputtering (1993) (6)
- A Multi-Band Current-Reused VCO for 2.5 GHz and 3.4 GHz WiMAX Applications (2008) (6)
- Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices (2011) (6)
- Optical and structural characterization of InAs/GaSb superlattices (1997) (6)
- Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate (2008) (6)
- Low-internal-loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser (1988) (6)
- Modeling of three-peak current–voltage characteristics with two resonant tunneling diodes connected in series (1997) (6)
- Conductive filaments controlled ferromagnetism in Co-doped ZnO resistive switching memory device (2018) (6)
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer (2004) (6)
- The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents (2000) (6)
- Reliability testing in GaN-based blue light-emitting diodes by doping TiO2 nanoparticles into silicone encapsulation (2014) (6)
- Origins of 1/f noise in indium antimonide photodiodes (1997) (5)
- The fabrication and study of InGaAsP/InP double-collector heterojunction bipolar transistors (1991) (5)
- Characterization of self-assembled ordered ZnO nanowire networks applied to photodetection (2012) (5)
- Design of a stopband‐improved UWB filter using a pair of shunt and embedded open stubs (2009) (5)
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers (2004) (5)
- GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors (2003) (5)
- Crystallinity of ZnS:Tb,F thin films and characteristics of green-color thin-film electroluminescent devices prepared by rf-magnetron sputtering (1992) (5)
- Improved 634 nm MQW AlGaInP LEDs performance with novel tensile strain barrier reducing layer (2003) (5)
- Improved Performance of 2,3-Dibutoxy-1,4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing (2005) (5)
- Improvement of extraction efficiency for GaN-based light emitting diodes (2010) (5)
- Quaternary AlInGaN-based photodetectors (2008) (5)
- A p-down InGaN/GaN MQW LED Structure Grown by MOVPE (2001) (5)
- Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode (2000) (5)
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes (2002) (5)
- Extension of active region in crossbar-type polymer solar photovoltaics induced by highly conductive PEDOT:PSS buffer layer (2010) (5)
- Growth of InGaN self-assembled quantum dots and their application to photodiodes (2004) (5)
- MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates (2003) (5)
- High Peak-to-Valley Current Ratio GaAs/InGaAs/InAs Double Stepped Quantum Well Resonant Interband Tunneling Diodes at Room Temperature (1996) (5)
- Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn (2006) (5)
- High‐power, high‐speed 1.3‐μm semi‐insulating‐blocked distributed‐feedback lasers (1988) (5)
- A fully compatible CMOS-based hydrogen ion sensor using natural forming sensing membrane for urea detecting application (2009) (5)
- Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes (2013) (5)
- Transmission Performances of CPW Lines on a Laser-Crystallization Polysilicon Passivated High-Resistivity Silicon Substrate (2012) (5)
- Investigation of Se-doped GaSb epilayers grown by low pressure metal-organic chemical vapor deposition (1993) (5)
- Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors (2007) (5)
- Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy (2012) (5)
- Vertically aligned GaN nanotubes - Fabrication and current image analysis (2006) (5)
- High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode (2003) (5)
- Delta-doping interband tunneling diode by metal-organic chemical vapor deposition (1993) (5)
- Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature (2000) (5)
- InGaN/GaN MQD p n junction photodiodes (2005) (5)
- Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template (2011) (5)
- Improved Circuit Design of Multipeak Current–Voltage Characteristics Based on Resonant Tunneling Diodes (1997) (5)
- Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time (2006) (5)
- Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition (1994) (5)
- A Compact-Size and High Isolation Dual-Band Coplanar-Waveguide Bandpass Filter (2007) (5)
- MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications (2007) (5)
- Enhancement in Light Extraction of GaN-Based Light-Emitting Diodes With High Reflectivity Electrodes (2011) (5)
- Design of sharp‐rejection, compact, and low‐cost ultra‐wideband bandpass filters using interdigital resonators (2006) (5)
- Effect of annealing temperatures on microstructure of (Zr0.8Sn0.2)TiO4 thin films grown by a sol–gel process (2009) (5)
- Size-Dependent Resonant Cavity Light-Emitting Diodes for Collimating Concerns (2013) (5)
- Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer layer (1999) (5)
- THE STRUCTURAL AND OPTICAL PROPERTIES OF HIGH QUALITY ZNTE GROWN ON GAAS USING ZNSE/ZNTE STRAINED SUPERLATTICES BUFFER LAYER (1998) (5)
- Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy (2011) (4)
- Postdeposition Annealing Effect on Redshift Behavior of Electroluminescence for Polymer Light-Emitting Diodes (2006) (4)
- Design of dual‐band bandpass filter using diverse quarter‐wavelength resonators for GPS/WLAN applications (2008) (4)
- High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide (2003) (4)
- Growth of znse/zns strained-layer superlattice on si substrates by atomic layer epitaxy (1997) (4)
- Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates (2004) (4)
- Design of AlGaInP visible lasers with a low vertical divergence angle (1998) (4)
- Enhanced thermal stability of green-emission quantum-dot light-emitting diodes via composition-gradient thick-shell quantum dots (2016) (4)
- Electron Field Emission Enhancement Based on Al-Doped ZnO Nanorod Arrays With UV Exposure (2018) (4)
- Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition (1997) (4)
- Automated synthesis of passive filter circuits including parasitic effects by genetic programming (2006) (4)
- Performance improvement of GaN-based HEMT grown on silicon (1 1 1) substrate by inserting low temperature AlN layer (2015) (4)
- A Dual-Band Current-Reused LNA with the Switching of LC-Resonances (2009) (4)
- Nanoepitaxy of InAs on Geometric Patterned Si (001) (2012) (4)
- Design of compact multilayered quad-band bandpass filter (2017) (4)
- Design of a high selectivity dual-band bandpass filter with stepped impedance resonator (2009) (4)
- Effect of electron-electron interactions on a two-dimensional electron gas in II-VI ZnS 0.06 Se 0.94 /Zn 0.8 Cd 0.2 Se quantum wells (1999) (4)
- Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar Cells (2011) (4)
- Characteristics of low K thin film microstrip line on standard lossy silicon substrate for radio frequency integrated circuits (2007) (4)
- Negative persistent photoconductivity in II-VI ZnS 1-x Se x /Zn 1-y Cd y Se quantum wells (1998) (4)
- Active thermal compensation of MEMS based gyroscope (2012) (4)
- DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD (2007) (4)
- AlGaN/GaN high-electron-mobility transistor with distributed gate grown on stripe-patterned Si(111) substrate (2015) (4)
- Effects of elastic strain on the band offset and effective mass of strained InGaSb epilayers (1993) (4)
- Design, fabrication and performance characterizations of an integrated dual-axis tuning fork gyroscope (2012) (4)
- Design of Dual-Band Bandpass Filter with Quasi-Elliptic Function Response for WLANs (2007) (4)
- Modeling multipeak current–voltage characteristic and hysteresis phenomena for several resonant tunneling diodes connected in series (1997) (4)
- Efficiency Improvement of GaN-Based LEDs With $ \hbox{SiO}_{2}$ Microrod Array and Textured Sidewalls (2010) (4)
- Effects of Drift-Region Design on the Reliability of Integrated High-Voltage LDMOS Transistors (2007) (4)
- Accurate equivalent circuit for etched resonator with effective negative permittivity (2007) (4)
- Reactive ion etching for AlGalnP/GaInP laser structures (1998) (4)
- ELECTRICAL PROPERTIES OF PD/N-GASB SCHOTTKY CONTACTS (1991) (4)
- Investigation of the optical properties of InGaAs(N):(Sb) quantum wells grown by metal organic vapor phase epitaxy (2006) (4)
- High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers (2004) (4)
- GaInNAs metal-semiconductor-metal near-infrared photodetectors (2006) (4)
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO2 Nanoparticles in Specific Region of Encapsulation Silicone (2013) (4)
- Al0.25Ga0.75N / GaN Schottky Barrier Photodetectors with an Al0.3Ga0.7N Intermediate Layer (2009) (4)
- A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers (1997) (4)
- Harmonic suppression in parallel coupled microstrip bandpass filter with embedded C‐shaped EBG cells (2006) (4)
- Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs (1998) (4)
- Optical characterization of a strain-compensated GaAs0.64Sb0.36/GaAs0.79P0.21 quantum well structure grown by metal organic vapor phase epitaxy (2012) (4)
- Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication (2014) (4)
- 1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE (2013) (4)
- Effects of Surface Cleaning on Stressvoiding and Electromigration of Cu-Damascene Interconnection (2008) (4)
- Dual-axis tuning fork vibratory gyroscope with anti-phase mode vibration mechanism (2014) (4)
- Optical properties of ZnSe1-xSx epilayers grown on misoriented GaAs substrates (1998) (4)
- An Inverse S-Shaped Slotted Ground Structure Applied to Miniature Wide Stopband Lowpass Filters (2007) (4)
- Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy (1998) (4)
- Lifetime Improvement of Organic Light Emitting Diodes using LiF Thin Film and UV Glue Encapsulation (2008) (4)
- Nanocrystalline silicon thickness dependence of transmission characteristics of CPWs on surface-passivated high-resistivity silicon substrates (2011) (3)
- Determination of the valence-band offset for GaInAsSb/InP heterostructure (1999) (3)
- Photoreflectance and C-V Measurement Investigations of Dry Etched Gate Recesses for GaInP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (HEMTs) Using BCl3/Ar Plasma. (1997) (3)
- InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures (2004) (3)
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors (2003) (3)
- Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells (2001) (3)
- An effective equivalent circuit model of slotted ground structures under planar microstrip (2008) (3)
- The study of GaAsInGaAs δ-doping resonant interband tunneling diode (1995) (3)
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer (2003) (3)
- High-performance 670-nm AlGaInP/GaInP visible strained quantum well lasers (1998) (3)
- A study of selective and nonselective reactive ion etching of GaAs/AlGaAs materials (1993) (3)
- Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors (1993) (3)
- Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion (2003) (3)
- Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer (2003) (3)
- MOVPE growth of ZnSe films on ZnO/Si templates (2004) (3)
- Temperature dependence of the band-edge exciton of a epilayer on GaAs (1999) (3)
- Use of Di‐π‐cyclopentadienyl Manganese as a Dopant Source for ZnS in Metallorganic Chemical Vapor Deposition (1996) (3)
- Effect of Oxygen Concentration Ratio on a Ga2O3-Based Resistive Random Access Memory (2019) (3)
- Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate (2012) (3)
- Hybrid Quantum Dot Light-Emitting Diodes: Design, Fabrication, and Characterization (2008) (3)
- A novel compact coplanar‐waveguide bandpass filter with good stopband rejection (2007) (3)
- Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique (2011) (3)
- GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure (2008) (3)
- Low‐frequency noise in InP‐based NnPnN double heterojunction bipolar transistors (1992) (3)
- Analysis of the dark current of focal-plane-array Hg1−xCdxTe diode☆ (2000) (3)
- The ESD protection improved by combining InGaN/GaN MQW LEDs with GaN Schottky diodes (2003) (3)
- Fast thermal evaporation in purification of 1,4-Di(pyren-1-ly)benzene (2012) (3)
- Optoelectronic Materials and Devices (1998) (3)
- Mg-doped GaN activated with Ni catalysts (2005) (3)
- Au/AuBe/Cr contact to p-ZnTe (2001) (3)
- Study on symmetry forbidden transitions in an InxGa1−xAs/GaAs single quantum well by temperature dependence (1995) (3)
- GaN-based light-emitting diodes prepared on vicinal sapphire substrates (2007) (3)
- Thermal annealing effect on the photoluminescence properties of unstrained GaInAsSb/InP single quantum well grown by MOVPE (2004) (3)
- A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed bragg reflectors (2002) (3)
- Doping effects on intersubband and interband optical transitions in GaSb-InAs superlattices (1996) (3)
- Normally-off AlGaN/GaN high-electron-mobility transistor on Si(111) by recessed gate and fluorine plasma treatment (2015) (3)
- 1.2‐eV GaAsN/InGaAs strain‐compensated superlattice structures for high efficiency solar cells (2007) (3)
- Hybridization of CdSe/ZnS Quantum Dots on InGaN/GaN Multiple Quantum Well Light-Emitting Diodes for Pink Light Emission (2008) (3)
- 1.3 μm InAs quantum dot resonant cavity light emitting diodes (2004) (3)
- A Compact Semi-Lumped Coplanar Waveguide Low-Pass Filter Fabricated on High Resistivity Silicon Substrate (2007) (3)
- Temperature-dependent electroluminescence in poly [2-methoxy-5(2′-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode (2001) (3)
- Oxidation of GaP in an Aqueous H 2 O 2 Solution (1986) (3)
- The doping concentration dependence of zinc and tin in InGaAs (1988) (3)
- Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers (1998) (3)
- Electroluminescent devices with different insulator/semiconductor interfaces prepared by radio-frequency sputtering (1993) (3)
- The influence of vicinal sapphire substrate on GaN epilayers and LED structures grown by metalorganic chemical vapor deposition (2006) (3)
- Spurious suppression of a dual‐mode bandpass filter using simple C‐shaped electromagnetic bandgap cells (2006) (3)
- A Compact Multi Transmission Zero Dual-Passband Filter Using Dual Stepped Impedance Resonators (2019) (2)
- Light Output, Thermal Properties, and Reliability of Using Glass Phosphors in WLED Packages (2021) (2)
- Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes (2013) (2)
- Photoluminescence and photo-induced conductivity in 2D siloxene nanosheet for optoelectronic applications. (2019) (2)
- Electroluminescence at pure blue region from a new anthracene-contained polymer (2013) (2)
- Control of Silicon Dioxide Properties by RF Sputtering (1983) (2)
- GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy (1999) (2)
- High Stability of Liquid-Typed White Light-Emitting Diode with Zn0.8Cd0.2S White Quantum Dots (2021) (2)
- Preparation and characterization of in1−xGaxAsyP1−y epilayers by liquid-phase epitaxy (1989) (2)
- STUDIES OF INSB METAL-OXIDE-SEMICONDUCTOR STRUCTURE FABRICATED BY PHOTOCHEMICAL VAPOR DEPOSITION USING SI2H6 AND N2O (1991) (2)
- Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers (2004) (2)
- Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE (2007) (2)
- Modulated beam growth method for MBE grown GaN layers (2004) (2)
- Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design (2011) (2)
- Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum light-emitting diodes (2001) (2)
- Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy (2013) (2)
- Enhanced non-enzymatic glucose biosensor of Ga-doped ZnO nanorods (2017) (2)
- The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching (2014) (2)
- InGaN/GaN MQD P-N Junction Photodiodes (2004) (2)
- Effects of Trimethylgallium Flow Rate on a-Plane GaN Growth on r-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth (2011) (2)
- White Light Generation from 2,3-Dibutoxy-1,4-poly(phenylene vinylene)-CdSe/ZnS Quantum Dot–InGaN/GaN Quantum Well Dual Hybrid Light-Emitting Diodes (2009) (2)
- A novel GaAs delta-doping induced triangle-like double-barrier tunneling diode (1991) (2)
- Effects of buffer layer growth conditions on the GaN epilayer quality by MOCVD (2000) (2)
- Liquid-phase epitaxial growth of ternary InAsxSb1−x for small amounts of InAs (1985) (2)
- Tolerance Design of Passive Filter Circuits Using Genetic Programming (2005) (2)
- Formation of local p(+) region in ZnSe by Cu3Ge contact (1999) (2)
- Non-oxidized graphene nanoplatelets as an efficient hole transport layer in organic light-emitting diodes (2014) (2)
- Separately Doped Structures for Red Organic Light-Emitting Diodes (2005) (2)
- A low power mixer with LC phase shifters for a single-end input (2010) (2)
- ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT (2020) (2)
- SiO2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor (1995) (2)
- GaN submicron rods on graphene for nonenzymatic amperometric sensing of glucose (2017) (2)
- Light Emission Characteristics of Nonpolar $a$ -Plane GaN-Based Photonic Crystal Defect Cavities (2016) (2)
- AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric (2012) (2)
- Color-Tunable Polymer Light-Emitting Diodes with Conjugated Polymer Homojunctions (2009) (2)
- Electroluminescent devices with different insulator/semiconductor interfaces prepared by rf sputtering (1992) (2)
- Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si (2010) (2)
- Design of New Eight-Channel Diplexer for Multiband Wireless Communication System (2018) (2)
- IMPROVING THE PERFORMANCE OF PHOSPHORESCENT BASED WHITE POLYMER LIGHT EMITTING DEVICES USING IRIDIUM COMPLEXES (2013) (2)
- High Collection Efficiency Achieved by Photonic Crystal Off- $\Gamma$ Diffractions in Microsized Thin-Film GaN Light-Emitting Diodes (2012) (2)
- Low-threshold current low-resistance 1.3 &mgr;m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE (2007) (2)
- Cesium Carbonate as an Effective Interfacial Layer on the High Performance of Polymer Light-Emitting Devices (2012) (2)
- A vibrating micro-resonator design for gyroscope applications using TIA (2010) (2)
- Growth of ZnSe films on ZnO-Si templates (2004) (2)
- Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers (1998) (2)
- Electroluminescent Characteristics of DBPPV-ZnO Nanocomposite Polymer Light Emitting Devices (2008) (2)
- BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors (1998) (1)
- A CMOS-Compatible Biological Transducer for Creatinine Detection: MIP-Gate ISFET (2009) (1)
- Investigation and fabrication of 1.3 um InAs quantum dot resonant cavity light emitting diodes (2002) (1)
- Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs (1998) (1)
- GaInAsSb/InP multiple-quantum-well structure grown by metalorganic vapor-phase epitaxy (1999) (1)
- Stability of Measurement of Heterojunction Bipolar Transistors Current–Voltage Characteristics with Thermal Effect (2002) (1)
- Design of Compact Quad-Band Bandpass Filter Using Stepped Impedance Resonators (2018) (1)
- Controlling the nitrogen composition of InGaAsN quantum wells grown by MOVPE (2008) (1)
- Optimum current-voltage characteristics of GaAs/AlAs intraband microwave devices (2015) (1)
- Compact Dual-Band Bandpass Filter Based on Quarter Wavelength Stepped Impedance Resonators (2016) (1)
- A simple method to design a compact and high performance wideband filter (2007) (1)
- Temperature Dependence in InxGa1-xAs/GaAs Double Quantum Well by Contactless Electroreflectance Spectroscopy (1995) (1)
- The formation of Ti / Al Ohmic contact on etched n-GaN surfaces (2000) (1)
- Design and numerical simulation of novel DBRs (2003) (1)
- Improvement in a-Plane GaN Crystal Quality by Investigating Different Buffer Layer (2010) (1)
- The Study of Metal-GaN Interface of Schottky Contacts with Different Metals (2000) (1)
- Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes (2001) (1)
- Green polymer light-emitting device preprared for next-generation flexible electronic application (2010) (1)
- High quality GaN epitaxial layers grown by modulated beam growth method (2004) (1)
- The relation between luminous properties and oxygen content in ZnS:TbOF thin-film electroluminescent devices fabricated by radio-frequency magnetron sputtering method (1998) (1)
- Oxide Confined Collector-Up Heterojunction Bipolar Transistors (2003) (1)
- Ultraviolet Photodetection Application in Magnesium Indium Oxide Thin Film Transistors via Co-Sputtering Deposition (2020) (1)
- Thickness for optimizing of organic layer and multi-layer anode on luminance efficiency in white-light top-emission organic light-emitting diodes. (2008) (1)
- The Layout Geometry Dependence of the Power Cells on Performances and Reliability (2010) (1)
- Growth of GaAs and InGaAs by MOCVD using a tertiarybutylarsine source (1995) (1)
- Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors (2004) (1)
- A dual-band current-reused low noise amplifier for 2.3 and 5.2 GHz applications (2008) (1)
- Approximate Sample size formula for Testing Group Mean Differences when Variances are Unequal in One-way ANOVA (2009) (1)
- Enhancement of Optical Polarization Anisotropy of a-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light (2013) (1)
- Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region (2013) (1)
- The annealing effects on optical and structural properties of (ZnSe)2(CdSe)n short-period-superlattices multiple quantum wells (1999) (1)
- A compact dual-band UWB filter based on the parallel line structure with the slot-line (2008) (1)
- Influence of polysilicon thickness on the microwave attenuation losses of the CPWs fabricated on polysilicon-passivated high-resistivity silicon substrates (2009) (1)
- The growth and characterization of the active layers in electroluminescent display devices (1992) (1)
- A simple process for high-speed vertical-cavity surface-emitting lasers fabrication up to 10 Gbps (2003) (1)
- InGaAsN Metal–Semiconductor–Metal Photodetectors with Transparent Indium Tin Oxide Schottky Contacts (2007) (1)
- Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design (2009) (1)
- Efficiency Enhancement of Top Emission Organic Light-Emitting Diodes with Ni/Au Periodic Anode (2008) (1)
- Fabrication of InP‐based NnpnN heterojunction bipolar transistor (1990) (1)
- Nitride-based blue LEDs withGaN/SiN double buffer layers (2003) (1)
- Correlation between surface nano triangle pattern features and ferromagnetism in (In, Si)-codoped ZnO memory device (2019) (1)
- Light Emission Characteristics of Nonpolar $a$ -Plane GaN-Based Photonic Crystal Defect Cavities (2015) (1)
- Characteristics and Applications of Tapered Fiber Optical Sensors for 1310 nm Wavelength (2013) (1)
- High-temperature stability of lasing wavelength in GaAsSb/GaAs double quantum wells lasers (2010) (1)
- An investigation of minority carrier lifetime in silicon doped either with zinc or cobalt (1980) (1)
- High efficiency transparent digital television antenna based on nano-structured thin film coating technology (2017) (1)
- Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors (2002) (1)
- Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs (1979) (1)
- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors (2004) (1)
- II-VI light emitting diode with low operation voltage (2000) (1)
- Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxy (1999) (1)
- Influence of Surface Cleaning on Stressvoiding and Electromigration of Cu Damascene Interconnection (2007) (1)
- Epitaxy of GaN by MOCVD and fabrication of AlGaN/GaN MODFET (2001) (1)
- A Current-reused VCO with Degenerated RC Components (2007) (1)
- BCl3/Ar Plasma-Induced Surface Damage in GaInP/InGaAs/GaInP Quantum-Well High-Electron-Mobility Transistors (1998) (1)
- 1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors (1999) (1)
- 9 Inch Diagonal ZnS and ZnS:Mn Films Fabricated by Metallorganic Chemical Vapor Deposition (1997) (1)
- Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment (2016) (1)
- Elastic Modulus Investigation of Gallium Nitride Nanotubes (2006) (1)
- Black film for improving the contrast ratio of organic light emitting diodes. (2008) (1)
- A new high transmittance dipole antenna (2016) (1)
- Raman study of biaxial strain in InGaN-GaN self-assembled quantum dots grown on sapphire (0001) (2005) (1)
- An Integrated Thermal Compensation System for MEMS (2014) (1)
- The Fabrication and Characterization of InGaAs Oxide-Confined Resonant-Cavity Light-Emitting Diodes Grown on GaAs Substrate (2007) (1)
- Design of multi-layered bandpass filter with independently controllable triple-passband response (2014) (1)
- The Growth Mechanisms of GaSb Epitaxial Film by MOCVD (1990) (1)
- Temperature dependence of electroluminescence in tris-(8-hydroxy) quinoline aluminum (Alq3) light-emitting diode (2001) (1)
- High-Temperature Stability of Lasing Wavelength in GaAsSb/GaAs QW Lasers (2009) (1)
- Low-Frequency Noise Spectra of Laterally Bridged ZnO Microrod-Based Photodetectors (2014) (1)
- Characterization on the 1064 nm InGaAs/GaAs Quantum-Well Laser Diode with Thermal Vias (2010) (1)
- Low-Frequency Noise Characteristics of Gallium-Doped ZnO Nanosheets as Photodetectors (2014) (1)
- Electrical and Photosensivity Characteristics of Hybrid/Composite ZnO Nanorod Transistors (2011) (0)
- Improvement of AlGaInP MQW Light Emitting Diodes by Modification of Ohmic Contact Layer (2003) (0)
- The Study of Stress Effects in GaN Epilayers on Very Thin Sapphire Substrates Using Chemical Mechanical Polishing Technique (2010) (0)
- Reducing roll-off effect of efficient green quantum-dot light-emitting diodes via composition-gradient thick-shell quantum dots (2016) (0)
- Extremely low-threshold continue-wave operation of InGaAs quantum-well lasers with an AlAs native-oxide layer grown by MOCVD (2007) (0)
- Organic thin-film transistors with N2 treatment (2005) (0)
- Effect of thickness on the structural and electrical properties of sol-gel-derived (Zr, Sn)TiO4 thin films (2006) (0)
- Design and experimental verifications of an integrated micro-gyroscope (2011) (0)
- Fabrication and properties of silicon reach-through avalanche photodiodes (1983) (0)
- Effect of the InP doping density on the electrical properties of the two-dimensional electron gas in LPE-grown modulation-doped heterostructures (1988) (0)
- Fabrication of Nano-pillar Array of Surface Texture on GaN-based Light-Emitting Diode by Nanoimprinting Lithography (2009) (0)
- Contactless Electroreflectance and Photoluminescence Study of the Sb Surfactant Effects on InGaAsN Multiple Quantum Wells (2013) (0)
- Improvement in Characteristics of InGaAs/GaAs Quantum-Dot PIN Photodetectors with Antireflection Photonic Crystals (2007) (0)
- RF Inductors on HR-Si Substrates with a Nanocrystalline Silicon Passivation Layer (2013) (0)
- Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum organic light-emitting diode (2000) (0)
- Thermal resistance variation of HBT with high junction temperature and bias condition (2003) (0)
- A Novel Transparent Microwave Thin Film Coating Technique Applied to Dual-Band Antennas (2019) (0)
- InGaAs/GaAs Quantum Wells Grown by Metal Organic Chemical Vapor Deposition Using Tertiarybutylarsine Sources (1995) (0)
- The Structure and Power-level Dependences of CMOS RF Power Cell Degradation by Hot-carrier Stress with Load Pull System (2009) (0)
- High Brightness InGaN/GaN LEDs with ESD Protection (2005) (0)
- 1.3 μm InGaAsP/InP Crescent buried heterostructure laser diodes grown by liquid phase epitaxy (1988) (0)
- Numerical analysis of an injection laser with stripe geometry (1983) (0)
- Stress Analysis in GaN Epilayer after Chemical Mechanical Polishing (CMP) from Sapphire Substrates (2009) (0)
- Effects of nitrogen incorporation on the electronic properties of GaxIn1-xNyAs1-y epilayers probed by persistent photoconductivity (2006) (0)
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Region (2005) (0)
- Effect of annealing and g-irradiation on the properties of CuInSe 2 thin films (2000) (0)
- Heterojunction Fe:InP/InGaAs Schottky and MESFETs grown by MOCVD (1994) (0)
- Investigation on direct-growth Of a-GaN on r-sapphire by MOCVD (2009) (0)
- MOVPE Growth and Characterization of AlInAsSb/GaInAsSb multiple-quantum-well structure (2000) (0)
- Improvement in a-GaN crystal quality by investigating different buffer layer (2009) (0)
- Optoelectronic Materials and Devices II Held in Taipei, Taiwan on 26-28 July 2000 (2000) (0)
- Organic Nonvolatile Memories Based on PMMA and PHEMA Dielectric Layers (2010) (0)
- Fabrication of Micro-textured Structure as Anti-reflection Layers by Imprint-patterning Process on GaAs Solar Cells to Enhance the Conversion Efficiency (2011) (0)
- Design of a triple‐band coplanar‐waveguide bandpass filter (2008) (0)
- Design of compact triple-passband bandpass filter (2016) (0)
- Factors controlling the contact resistance of semiconductors (1979) (0)
- Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode (2015) (0)
- White Light Generation from DBPPV Polymer-CdSe/ZnS Quantum Dot-InGaN/GaN Quantum Well Dual Hybrid Light-Emitting Diodes (2008) (0)
- Triple-passband bandpass filter with wide stopband based on microstrip-to-defected stepped impedance resonator (SIR) structure (2013) (0)
- Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes (2008) (0)
- Study of GaInP/GaAs/GaInP Double Heterostructures Grown by MOCVD with Photoreflectance and Photoluminescence (1994) (0)
- The novel method to improve electrical characteristics of p-GaN by using Ni catalysis (2004) (0)
- Dark current mechanisms in HgCdTe photodiodes (1998) (0)
- Interpretations for coexistence of unipolar and bipolar resistive switching behaviors in Pt/NiO/ITO structure (2019) (0)
- Improving current spreading of GaN-based LEDs by N -pad current surrounding design (2010) (0)
- Use of Di-π-cyclopentadienyl Manganese as a Dopant Source for ZnS in Metallorganic Chemical Vapor Deposition. (1997) (0)
- GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure (2007) (0)
- Undoped GaSb Growth by MOCVD (1990) (0)
- Fabrication of color-stable organic light-emitting devices by utilizing incomplete energy transform (2006) (0)
- Influences and Kinetics of the GaAs-LPMOCVD Growth Rates Due to Se, Sn, S and Zn Dopants (1984) (0)
- Investigation of the Influence of In0.59Ga0.41As Relaxed Layer InAs/In0.59Ga0.41As/GaAs Double Quantum Well Resonant Interband Tunneling Structure (1996) (0)
- Effect Of RF Sputtering Parameters On ZnO Films Deposited Onto Inp Substrates (1990) (0)
- Researches of SiO2 on InP and GaAs Mos Structures (1993) (0)
- New triple-passband bandpass filter with compact size (2015) (0)
- Improved performance of DB-PPV based Polymer Light Emitting Diodes by Thermal Annealing (2004) (0)
- Black film for improving the contrast ratio of organic light emitting diodes (2006) (0)
- Enhanced sensitivity of non-enzymatic glucose sensor using different concentrations of Al-doped ZnO nanorod (2019) (0)
- Simulation and Formulation of Output Performance of 1310-nm-Wavelength Tapered Fiber Optical Sensor (2013) (0)
- Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode (2000) (0)
- Fabrication of 1.3 μm InGaAsP/InP double heterojunction lasers grown by liquid phase epitaxy (1988) (0)
- Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by MOVPE (2005) (0)
- A Current-reused VCOwithDegenerated RC Components (2007) (0)
- Characterization of Si-implanted gallium antimonide (1991) (0)
- A method for manufacturing an integrated metallic cooling body for a semiconductor device (2007) (0)
- WITHDRAWN: An application of fractal analysis to InGaN self-assemble quantum dots grown by MOCVD (2007) (0)
- ZnO MSM ultraviolet photodiodes with Pd contact electrodes (2007) (0)
- The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal–Oxide–Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System (2010) (0)
- Photoreflectance Study of InP and GaAs by Metal Organic Chemical Vapor Deposition Using Tertiarybutylphosphine and Tertiarybutylarsine Sources (1995) (0)
- Performance improvement of GaN-based metal–semiconductor–metal photodiodes grown on Si(111) substrate by thermal cycle annealing process (2014) (0)
- Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers (2010) (0)
- Improvement of Linearity in Novel InGaAsN-based HEMTs (2005) (0)
- Nitride-based near UV MQW LEDs with AlGaN barrier layers (2003) (0)
- RF Inductors on Nanocrystalline Silicon Passivated HR-Si Substrates (2012) (0)
- Effects of annealing on ZnS:TbF3 electroluminescent devices prepared by rf sputtering (1992) (0)
- A semiconductor device with integrated metallic cooling body and process for their preparation (2007) (0)
- Effect of thermal treatment on electrical properties of sol-gel Derived Zr0.8Sn0.2TiO4 thin film (2007) (0)
- Investigation of Buffer Layer Modified by Doping Glycerol for Polymer Photovoltaic Devices (2008) (0)
- Energy shift and band offset with elastic strain in InGaSb epilayers on GaSb(100) by metalorganic chemical vapor deposition (1993) (0)
- Effects of TMSb/TEGa ratios on epilayer properties of gallium antimonide grown by low-pressure MOCVD (1991) (0)
- Crystal structure and luminescent properties of KSrPO4:Tb3+:Ce3+ phosphors prepared by using microwave assisted sintering (2012) (0)
- The character ization of p-GaAs/i-InGaAsN/n-GaAs hetero-junction solar cell with various D M Hy flow rates (2011) (0)
- New compact pentaplexer using stub-loaded stepped impedance resonators (2014) (0)
- Study of GaSb Schottky contacts (1994) (0)
- Nitride-based p-i-n Photodetectors with ITO p-contacts (2005) (0)
- Ohmic contacts to GaN with rapid thermal annealing (2000) (0)
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers (2005) (0)
- Ohmic and Schottky contacts to GaSb (1991) (0)
- Growth and characterization of InGaN/GaN multi-quantum well light-emitting diodes (2000) (0)
- Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy (2005) (0)
- Characterization of the ZnO metal-semiconductor-metal ultraviolet photodetectors with Au contact electrodes (2006) (0)
- The comparison of four types L-band GaAs monolithic mixer using two common-gate MESFETs as the input stage (1999) (0)
- Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO2 Layer (2004) (0)
- GaN/AlGaN two-dimensional electron gas grown by ammonia-MBE on MOCVD GaN template (2002) (0)
- Study of Pentacene-Based Organic Thin Film Transistor with PMMA as Insulator (2007) (0)
- Characterization of AlInAsSb/GaInAsSb Multiple Quantum Wells Grown by MOVPE (2003) (0)
- Performance Improvement of GaN-based MSM Photodiodes Grown on Si(111) Substrate by Thermal Cycle Annealing Process (2013) (0)
- WITH THICK GATE OXIDE (2005) (0)
- Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents (2000) (0)
- Efficiency improvement in flexible phosphorescent organic light-emitting diode (2006) (0)
- InGaSb/GaSb strained quantum wells by MOCVD (1992) (0)
- Quality improvement of GaN grown on Si (111) using metal-organic vapor-phase epitaxy (2011) (0)
- High-quality InP epitaxial layers grown by metal-organic chemical vapor deposition using tertiarybutylphosphine (TBP) source (1994) (0)
- Enhanced glucose biosensor properties of gold nanoparticle-decorated ZnO nanorods (2017) (0)
- Improved optical properties of a-plane InGaN/GaN multiple quantum wells with gradient-stages MQW structure (2010) (0)
- High efficient yellow-green electroluminescence from polymer light-emitting diode on flexible substrate (2010) (0)
- High Brightness InGaN/GaN MQW Green Light Emitting Diodes with CART and DBR Structures (2003) (0)
- Enhancing the performance of organic thin-film transistor using a buffer layer (2009) (0)
- Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors (2003) (0)
- AlInGaN UV-C photodetectors with an insertion layer of high work function metal (2010) (0)
- Nonvolatile Memory Thin Film Transistors using CdSe/ZnS Quantum Dots-PMMA Blend Layer as Floating Gate (2011) (0)
- Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base material (2004) (0)
- White Light Emission from Microcavity Organic Light-Emitting Diodes with Color-Coverting CdSe/ZnS Quantum Dots (2012) (0)
- AlGaN MSM Photodetectors with SiN/GaN double buffer layers (2007) (0)
- Ohmic contacts and reactive ion beam etching for p-type GaN (2000) (0)
- UWB bandpass filter with wide stopband using open stubs (2007) (0)
- Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors (2006) (0)
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO₂ Nanoparticles in Specific Region of Encapsulation Silicone (Special Issue : Recent Advances in Nitride Semiconductors) (2013) (0)
- AlGaN/InGaN/GaN HFET with an InGaN Channel Layer (2004) (0)
- Studies of InSb metal oxide semiconductor structure fabricated by photo-CVD using Si2H6 and N2O (1991) (0)
- Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition (1995) (0)
- Electromodulation spectroscopy study of symmetry forbidden transitions in an InxGa1−xAsGaAs single quantum well grown using a tertiarybutylarsine source (1996) (0)
- Interface properties of passivation layers on HgCdTe (1992) (0)
- Nonvolatile memory thin film transistors using triple polymeric dielectric layers (2010) (0)
- Effect of AlGaAs cladding layer on GaInNAs/GaAs MQW p‐i‐n photodetector (2008) (0)
- MOVPE growth of quantum well GaAs/In0.10GaAs for solar cell applications (2007) (0)
- Spatially dispersive displacement sensor utilizing a semiconductor gain chip. (2007) (0)
- Photoluminescence Spectra In InGaSb-GaSb Superlattices By Metal Organic Chemical Vapor Deposition (1997) (0)
- The Investigation of In0.22GaAs/GaAs Multi-quantum Wells Solar Cells (2011) (0)
- ZnS:Mn thin film electroluminescent display devices using hafnium dioxide as insulating layer (1991) (0)
- Improve efficiency by surface treatment of top-emission flexible polymer light-emitting diode (2015) (0)
- The effect of growth time and thickness on the electrical properties of ZnSe epilayers on GaAs substrates (1989) (0)
- A miniature triaxial tactile sensor with calibratatele readout circuit (2014) (0)
- Enhancement of the efficiency of GaAs-based solar cells by sol-gel-synthesized ZnO nanowire arrays as the antireflection layer (2010) (0)
- Analysis of a spatially dispersive displacement sensor utilizing an AlGaInP chip. (2007) (0)
- The Improvement of Light Intensity for Nitride-Based MQW LEDs by Gradient- Stage Emitter Layer (2010) (0)
- Zinc defect enhanced saturation magnetization in Mn-doped ZnO thin films (2013) (0)
- Photoluminescence of Nano-scaled YAG:Ce Phosphor Powders (2002) (0)
- Phosphorus Implantation Effects in Mg Doped GaN Epilayers (2006) (0)
- Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy (1998) (0)
- Application of multi-wall carbon nanotube/SiC composite to thermal dissipation of high-bright light emitting diode (2010) (0)
- Nonvolatile organic transistor-memory devices based on pentacene semiconductors and poly (methyl methacrylate)/graphene quantum-dot composite trap layers (2016) (0)
- ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy (2002) (0)
- Evaluation of loss and APHC of DC-biased low K transmission line in MMICs technologies (2006) (0)
- Highly strained oxide confined InGaAs VCSELs emitting in the 1.3 im regions (2004) (0)
- SOG micromechanical resonator utilizing single crystal Si and CMOS ASIC (2010) (0)
- Characteristics of InxGa1−xAs/GaAs pseudomorphic modulation doped field effect transistor (1997) (0)
- Improved Device Characteristics of InGaAsN Photodetectors Using MIMS Structure (2006) (0)
- Study of GaInP/GaAs/GaInP Single Quantum Well Structure Grown by Low-Pressure MOCVD with Photoreflectance and Photoluminescence (1994) (0)
- Studies on the color converting efficiency of organic polymer integrated onto InGaN light-emitting diodes (2011) (0)
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO2 Layer (2004) (0)
- A hairpin line wideband bandpass filter design with embedded open stubs (2007) (0)
- Highly Light-Collection Efficiency Based on Multi-Beam Diffractions from GaN-Based Micro-Cavity Light-Emitting Diodes with Photonic Crystals (2012) (0)
- On-Wafer dielectric measurement technology for high resistivity silicon transmission line Interconnect characterization (2006) (0)
- Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence (2012) (0)
- MOVPE Growth of M-Plane GaN Using LiAlO2 Substrates (2007) (0)
- A 10-in. Diagonal ZNS:MN Tfel Panel Fabricated By A Sequential Vacuum Deposition Apparatus (1997) (0)
- Fabrication of InGaAsN Double Hetero-junction Solar Cells for Application on Multi-junction Tandem Solar Cells (2011) (0)
- Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching (2004) (0)
- Investigations of Wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes (1998) (0)
- Preparation of SiO2 film by direct photo-CVD on strained SiGe layer (1994) (0)
- MOS Power Cells for Output Power Levels of 17 to 23 dBm (2011) (0)
- Nitride based Power Chip with ITO p-Contact and Al back-side Reflector (2004) (0)
- Interfacial Modification in Organic Thin Film Transistors with OTS Solutions (2005) (0)
- Homoepitaxial ZnSe MIS Photodetectors Using SiO2 and BST Insulator (2005) (0)
- Growth and characterization of InGaN/GaN multiple quantum well light-emitting diodes (2000) (0)
- Hybrid PVK: OXD-7: QDs Emitting Layer for High Color Purified Quantum Dot Light Emitting-Diode (2018) (0)
- The photoemission study of intermetallic compound superconductor YNi2B2C (1997) (0)
- The Study of Fourier Transform Infrared Spectroscopy on 3-5 and 8-12 µm InAsSb/GaSb Superlattices (2000) (0)
- Optical characterization of InGaN/GaN multiple quantum well structures grown by metalorganic chemical vapor deposition (2007) (0)
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What Schools Are Affiliated With Yan‐kuin Su?
Yan‐kuin Su is affiliated with the following schools:
