Yasuharu Suematsu
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Japanese scientist
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Physics
Yasuharu Suematsu's Degrees
- PhD Physics University of Tokyo
- Masters Applied Physics Kyoto University
- Bachelors Physics University of Tokyo
Why Is Yasuharu Suematsu Influential?
(Suggest an Edit or Addition)According to Wikipedia, Yasuharu Suematsu is a researcher and educator in optical communication technology. His research has included the development of Dynamic Single Mode Semiconductor Lasers for actuation and the development of high-capacity, long-distance optical fiber communications technology.
Yasuharu Suematsu's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Gain and the threshold of three-dimensional quantum-box lasers (1986) (956)
- GaInAsP/InP Surface Emitting Injection Lasers (1979) (561)
- Gain and intervalence band absorption in quantum-well lasers (1984) (407)
- Analysis of gain suppression in undoped injection lasers (1981) (283)
- Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers (1985) (279)
- The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption (1980) (205)
- Noise properties of injection lasers due to reflected waves (1979) (154)
- Theoretical Gain of Quantum-Well Wire Lasers (1985) (149)
- The temperature dependence of the threshold current of GaInAsP/InP DH lasers (1981) (147)
- Dynamic single-mode semiconductor lasers with a distributed reflector (1983) (144)
- 1.5 μm phase-shifted DFB lasers for single-mode operation (1984) (138)
- Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation (1982) (120)
- Handbook of semiconductor lasers and photonic integrated circuits (1994) (109)
- Fundamental transverse electric field (TE0) mode selection for thin‐film asymmetric light guides (1972) (107)
- In 1-x Ga x As y P 1-y /InP DH lasers fabricated on InP (1978) (103)
- Threshold current density of GaInAsP/InP quantum-box lasers (1989) (101)
- Analysis of dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers (1985) (100)
- A condition of single longitudinal mode operation in injection lasers with index-guiding structure (1979) (97)
- 1.5-1.6 µm GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed Bragg reflector (1983) (97)
- Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection laser. (1978) (93)
- The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasers (1983) (83)
- Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built-in distributed Bragg reflector (1983) (83)
- Light Emission from Quantum-Box Structure by Current Injection (1987) (80)
- GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm Wavelength (1980) (80)
- Lasing characteristics of 1.5 mu m GaInAsP-InP SCH-BIG-DR lasers (1991) (79)
- Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasers (1977) (74)
- Long-wavelength optical fiber communication (1983) (73)
- Resonance-like characteristics of the direct modulation of a junction laser (1967) (72)
- Integrated twin-guide AlGaAs laser with multiheterostructure (1975) (66)
- Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser (1994) (65)
- Electric-field-induced refractive index variation in quantum-well structure (1985) (64)
- Lasing characteristics of 1.5 - 1.6 µm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors (1981) (62)
- GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (1981) (60)
- Propagation Mode and Scattering Loss of a Two-Dimensional Dielectric Waveguide with Gradual Distribution of Refractive Index (1972) (54)
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 µm Wavelength InGaAsP/InP Lasers (1981) (53)
- Carrier lifetime measurement of a junction laser using direct modulation (1968) (51)
- Electro-optical polarisation control on single-mode optical fibres (1980) (48)
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm (1979) (48)
- Theoretical Spontaneous Emission Factor of Injection Lasers (1977) (47)
- A multi-hetero-AIGaAs laser with integrated twin guide (1975) (46)
- A new structure for high-power TW-SLA (Travelling wave semiconductor laser amplifier) (1991) (44)
- Dynamic spectral width of rapidly modulated 1.58 m GaInAsP/InP buried-heterostructure distributed-Bragg-reflector integrated-twin-guide lasers (1981) (40)
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure (1978) (39)
- 1.5-1.6 μm GaInAsP/InP Integrated twin-guide lasers with first-order distributed Bragg reflectors (1980) (39)
- Single-mode properties of distributed-reflector lasers (1989) (38)
- Coupling coefficient in strongly coupled dielectric waveguides (1977) (38)
- Semiconductor Lasers in Photonics (2008) (38)
- Novel Structure GaInAsP/InP 1.5–1.6 µm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser (1985) (37)
- Single-mode oscillation under high-speed direct modulation in GaInAsP/InP integrated twin-guide lasers with distributed Bragg reflectors (1980) (36)
- Polarization control on output of single-mode optical fibers (1981) (35)
- Chasi-Guided Modes and Related Radiation Losses in Optical Dielectric Waveguides with External Higher Index Surroundings (1975) (35)
- Optical second-harmonic generation due to guided-wave structure consisting of quartz and glass film (1974) (35)
- Theory of refractive index variation in quantum well structure and related intersectional optical switch (1988) (35)
- Single-wavelength operation of 1.53 μm gainasp/inp buried-heterostructure integrated twin-guide laser with distributed bragg reflector under direct modulation up to 1 ghz (1981) (34)
- 1.67 µm Ga0.47In0.53As/InP DH Lasers Double Cladded with InP by LPE Technique (1979) (34)
- Suppression of relaxation oscillation in light output of injection lasers by electrical resonance circuit (1977) (34)
- An Exact Analysis of Cylindrical Fiber with Index Distribution by Matrix Method and Its Application to Focusing Fiber (1976) (34)
- 1.5 μm phase adjusted active distributed reflector laser for complete dynamic single-mode operation (1984) (34)
- Polarization‐dependent gain in GaAs/AlGaAs multi‐quantum‐well lasers: Theory and experiment (1984) (33)
- Properties of intensity noises of laser diodes due to reflected waves from single-mode optical fibers and its reduction (1981) (32)
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with (100) Substrate in the Range of 1.2–1.5 µm (1978) (32)
- Analysis of semiconductor intersectional waveguide optical switch-modulator (1990) (32)
- Advances in Semiconductor Lasers (1985) (31)
- Single-mode semiconductor lasers for long-wavelength optical fiber communications and dynamics of semiconductor lasers (2000) (31)
- Gain and the Threshold of Three-Dimensional (1986) (31)
- Measurements of refractive-index variation with free carrier density and temperature for 1.6 μm GaInAsP/InP lasers (1980) (31)
- Conditions for OMVPE Growth of GaInAsP/InP Crystal (1984) (30)
- Tunable Parametric Oscillator Using a Guided Wave Structure (1970) (29)
- Room-temperature CW operation of 1.60 μm GaInAsP/InP buried-heterostructure integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (1982) (29)
- Integrated optics approach for advanced semiconductor lasers (1987) (29)
- Second‐harmonic generation due to a guided wave structure consisting of quartz coated with a glass film (1973) (28)
- Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength (1980) (27)
- (Invited) Theory of Single Mode Injection Lasers Taking Account of Electronic Intra-band Relaxation (1979) (27)
- Axial mode selectivity in active distributed-reflector for dynamic-single-mode lasers (1985) (27)
- Novel triode device using metal-insulator superlattice proposed for high-speed response (1986) (26)
- Switching operation in intersectional type field effect MQW optical switch (1988) (26)
- Transverse mode control in semiconductor lasers (1973) (25)
- Nonlinear Distortion Properties of Laser Diode Influenced by Coherent Reflected Waves (1984) (25)
- Fast pulse behaviour of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μm (1977) (24)
- Violet and Near-UV Light Emission from GaN/Al$_{\bf 0.08}$Ga$_{\bf 0.92}$N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy (1995) (24)
- Analysis of reflection-type optical switches with intersecting waveguides (1988) (24)
- Introduction to optical fiber communications (1982) (24)
- Measurement of spontaneous emission efficiency and nonradiative recombinations in 1.58‐μm wavelength GaInAsP/InP crystals (1982) (24)
- Random-bend loss in single-mode and parabolic-index multimode optical fiber cables. (1980) (23)
- Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures (1992) (23)
- Mesa-substrate buried heterostructure GaInAsP/InP injection lasers (1979) (23)
- Carrier Lifetime Measurement of GaInAsP/InP Double-Heterostructure Lasers (1977) (22)
- Room-temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantum-wire size active region (1993) (22)
- A GaInAsP/InP tapered-waveguide semiconductor laser amplifier integrated with a 1.5 mu m distributed feedback laser (1991) (22)
- Low threshold current cw operation of gainasp/inp buried heterostructure distributed bragg-reflector integrated-twin-guide laser emitting at 1.5-1.6 μm (1981) (21)
- GaAs-AlxGa1-xAs integrated twin-guide lasers with distributed Bragg reflectors (1977) (21)
- Switching operation in OMVPE grown GaInAs/InP MQW intersectional optical switch structures (1989) (21)
- New 1.6 ?m wavelength GaInAsP/InP buried heterostructure lasers (1980) (20)
- Ga x In 1-x As y P 1-y /InP injection laser partially loaded with first-order distributed Bragg reflector (1979) (19)
- 1.6 µm Wavelength Buried Heterostructure GaInAsP/InP Lasers (1980) (19)
- An Approximate Analysis of Gain Suppression in Injection Lasers for Band-to-Band and Band-to-Impurity-Level Transitions (1979) (18)
- Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch (1991) (18)
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 µm (1979) (18)
- GaxIn1-xAsyP1-y–InP Injection Laser Partially Loaded with Distributed Bragg Reflector (1978) (18)
- A Light Beam Waveguide Using Hyperbolic-Type Gas Lenses (1966) (17)
- Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained single-quantum-well lasers with 70-nm period wire active region (1993) (17)
- Wavelength stabilisation of 1.5 μm GaInAsP/InP bundle-integrated-guide distributed-Bragg-reflector (BIG-DBR) lasers integrated with wavelength tuning region (1986) (16)
- 1.53 μm DFB lasers by mass transport (1984) (15)
- Intersectional waveguide type optical switch with quantum well structure (1985) (15)
- 1.54‐μm phase‐adjusted InGaAsP/InP distributed feedback lasers with mass‐transported windows (1985) (15)
- Axial-mode selectivities for various types of integrated twin-guide lasers (1977) (15)
- Harmonic Characteristics of Laser Diodes (1982) (15)
- GaInAsP/InP single-quantum-well (SQW) laser with wire-like active region towards quantum wire laser (1988) (14)
- 1.6 µm wavelength GaInAsP/InP BH lasers (1981) (14)
- Use of a total absorption ATR method to measure complex refractive indices of metal-foils (1980) (14)
- Chirping compensation using a two-section semiconductor laser amplifier (1992) (14)
- INFLUENCE OF INTRABAND ELECTRONIC RELAXATION ON RELAXATION OSCILLATION OF INJECTION LASERS. (1979) (13)
- Mode coupling and radiation loss of clad-type optical waveguides due to the index inhomogeneities of the core material (1975) (13)
- Fabrication technique for GaInAsP/InP quantum wire structure by LP-MOVPE (1988) (13)
- Lasing action in GaInAs/GaInAsP quantum-wire structure (1990) (13)
- Proposal of distributed reflector (DR) structure for high efficiency dynamic single mode (DSM) lasers (1988) (13)
- Static characteristics of 1.5 - 1.6 µm GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers (1984) (13)
- Active Distributed Reflector Lasers Phase Adjusted by Groove Region (1984) (12)
- Advanced semiconductor lasers (1992) (12)
- Cavity length dependence of differential quantum efficiency of GaInAsP/InP lasers (1981) (11)
- Dynamic-single-mode lasers (1985) (11)
- Low-Loss Splicing of Single-Mode Fibers by Tapered-Butt-Joint Method (1978) (11)
- Cw operation of 1.5 ~ 1.6 μm wavelength gainasp/inp buried-heterostructure integrated twin-guide laser with distributed bragg reflector (1981) (11)
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE (1990) (11)
- Low-threshold-current CW operation of 1.5 μm GaInAsP/InP bundle-integrated-guide distributed-Bragg-reflector (BIG-DBR) lasers (1985) (11)
- Focusing properties of thin‐film lenslike light guide for integrated optics (1973) (11)
- Dynamic Single-Mode Lasers (2014) (11)
- Thickness measurement of ultrathin films on metal substrates using ATR. (1980) (11)
- 1.5 mu m GaInAsP/InP distributed reflector (DR) lasers with SCH structure (1990) (10)
- Wavelength tunable 1.5-micron GaInAsP/InP bundle-integrated-guide distributed Bragg reflector (BIG-DBR) lasers (1985) (10)
- Room temperature operation of GaInAs-GaInAsP-InP SCH multiquantum-film laser with narrow wire-like active region (1991) (10)
- Analysis of an integrated twin-guide laser with coupled-wave theory (1977) (10)
- Optimum conditions in the attenuated total reflection technique. (1981) (10)
- Room temperature CW operation of Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP strained MQW lasers with wire active region (1992) (10)
- Temperature Characteristics of a GaAs–AlGaAs Integrated Twin-Guide Laser with Distributed Bragg Reflectors (1978) (9)
- Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch (1989) (9)
- 1.6 µm wavelength GaInAsP/InP lasers prepared by two-phase solution technique (1981) (9)
- Wave theory of the negative resistance element due to Gunn effect (1966) (9)
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3 µm Wavelength (1980) (9)
- Mode Selectivity in Integrated Twin-Guide Lasers (1976) (9)
- External higher‐index mode filters for band widening of multimode optical fibers (1975) (8)
- Properties of Harmonic Distortion of Laser Diodes with Reflected Waves (1982) (8)
- Large-signal analysis of dynamic wavelength shift and carrier-density-variation in directly modulated dynamic-single-mode lasers (1984) (8)
- Properties of irregular boundary of RF sputtered glass film for light guide (1972) (8)
- Alloy composition and flow rates in GaxIn1-xAsyP1-y lattice-matched to InP grown by MO-CVD (1983) (8)
- Noise study of low-dimensional quantum-well semiconductor laser amplifiers (1992) (8)
- Random bend losses in single-mode optical-fibre cables: power-spectrum estimation from spectral losses (1978) (7)
- Narrow-beam divergence of the emission from low-threshold GaInAsP/InP double-heterostructure lasers (1979) (7)
- Semiconductor devices for optical communications in 1 micron band of wavelength (1980) (7)
- 1.5 μm GaInAsP/InP distributed reflector (DR) laser with high-low reflection grating structure (1989) (7)
- Gain and Gain Suppression in Semiconductor Lasers (1984) (7)
- Field‐induced refractive index variation spectrum in a GaInAs/InP quantum wire structure (1991) (7)
- 1.5-1.6 µm GaInAsP/InP Bundle-Integrated-Guide (BIG) Distributed-Bragg-Reflector (DBR) Lasers (1987) (7)
- (BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE (1997) (7)
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE (1987) (7)
- Enhancement effect of high-frequency noise of injection lasers with reflected waves due to direct modulation (1980) (6)
- Spectral behavior of 1.5 µm BIG-DBR-DSM lasers (1987) (6)
- Novel single-longitudinal-mode 1.5 mu m GaInAsP/InP distributed reflector (DR) laser (1988) (6)
- Very fine corrugations formed on InP by wet chemical etching and electron beam lithography (1989) (6)
- OMVPE conditions for GaInAs/InP heterointerfaces and superlattices (1988) (6)
- Suppression of mode hopping noise caused by external reflection in dynamic single mode (DSM) lasers (1987) (6)
- Amplification Characteristics of Integrated Twin-Guide Laser Amplifier (1981) (6)
- Ga x In 1-x As y P 1-y /InP terraced substrate single-mode laser (1981) (6)
- Measurement of delay time differences on the photocathode surface of a photomultiplier (1968) (5)
- Bundle-integrated-guide DBR-type dynamic-single-mode laser with short active region (1985) (5)
- Chapter 4 Dynamic Single-Mode Semiconductor Lasers with a Distributed Reflector (1985) (5)
- Quantum Intensity Noise of Directly Modulated Laser Diode Influenced by Reflected Waves (1982) (5)
- MEASUREMENT OF COUPLING COEFFICIENT AND COUPLING LENGTH OF GaAs/AlGaAs INTEGRATED TWIN-GUIDE INJECTION LASERS PREPARED BY LIQUID-PHASE-EPITAXY. (1979) (5)
- Integrated optical branching filter consisting of three-dimensional waveguide and its nonradiative condition (1979) (5)
- Dynamic Single Mode Semiconductor Lasers (1984) (5)
- The Progress of Integrated Optics in Japan (1975) (5)
- Experiment on quasi-fundamental mode oscillation of ruby laser (1964) (5)
- Bandwidth limitations due to harmonic distortion in single-mode optical fibers (1979) (4)
- TP-B4 1.6-µm wavelength GaInAsP/InP BH lasers (1980) (4)
- New lambda /4 phase-shift method by conversion of refractive index difference and application to 1.5 mu m GaInAsP/InP DFB laser (1989) (4)
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE (1987) (4)
- Small-signal admittance of bulk-semiconductor devices at higher frequencies (1968) (4)
- Suppression of intensity fluctuation of a longitudinal mode in directly modulated GaInAsP/InP dynamic single-mode laser (1983) (4)
- Impedance diagram of the Gunn diode (1966) (4)
- Generation of millimeter-waves by means of electron beam cyclotron resonance (1963) (4)
- A Modified 1.5 µm GaInAsP/InP Bundle-Integrated-Guide Distributed-Bragg-Reflector (BIG-DBR) Laser with an Inner Island Substrate (1988) (3)
- Stabilization of the lasing wavelength by Bragg wavelength-tunable bundle-integrated-guide distributed-Bragg-reflector lasers (1986) (3)
- A New-Type 1.5∼1.6 µm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process (1987) (3)
- (Invited) Dynamic-Single-Mode Semiconductor Lasers (1983) (3)
- Observation of field induced refractive index variation in GaInAs/InP quantum wire (QW) structure (1990) (3)
- Vector wave analysis of broadband multimode optical fibers with optimum refractive index distribution (1978) (3)
- Gaussian Modes and Fabry-Perot Resonators Including Uniaxially Anisotropic Medium (1971) (3)
- 1.5 μm phase-shifted DFB laser by EBX and mass-transport technique (1985) (3)
- Twin-Guide Laser with Narrow Radiation Angle (1978) (2)
- Analysis of novel resonant electron transfer triode device using metal-insulator superlattice for high speed response (1986) (2)
- A Multi-Hetero-AlGaAs Laser with Integrated Twiu Guide (1975) (2)
- Crystal growth, new structures and integration (1990) (2)
- An Ideal Refractive-Index-Distribution and Mode Filter for Band Broadening of Multimode Optical Fiber (1976) (2)
- Measurement of Zn Doping Level in InGaAsP/InP DH Lasers (1979) (2)
- Direct modulation properties of bundle-integrated-guide dynamic single mode (BIG-DSM) lasers (1986) (2)
- High Speed Pulse Modulation of Injection Lasers at Non-Bias Condition (1976) (2)
- Equivalent relation for wave theory of the Gunn diode using the negative mobility and the distribution function model (1966) (2)
- Coupling length due to random bending in multimode optical fibres (1978) (2)
- Proposal of space charge limited insulator tetroide with high-speed response using metal and insulator (1989) (2)
- Focusing Effect on Optical Parametric Oscillations for Three and Four Wave Interactions (1972) (2)
- A Parametric Amplifier with (1963) (2)
- Reflection noise measurement of dynamic single mode lasers (1986) (2)
- Precise control of grating pitch by electron-beam exposure system for integrated optics (1983) (2)
- 1.5–1.6 µm Wavelength (100) GalnAsP/InP DH Lasers (1979) (2)
- Dynamic Single-Mode Semiconductor Lasers (1982) (2)
- Relation between transverse mode control and longitudinal mode behavior in the injection laser (1982) (2)
- Experimental Studies on the Limitation of Focussing Power of Hyperbolic-Type Gas Lens (1969) (1)
- Effect of photocathode light transmission on photomultiplier time response (1969) (1)
- Narrow dynamic-spectral-width rapidly modulated GaInAsP/InP BH-DBR-ITG lasers for 1.55-µm wideband single-mode fiber transmission (1982) (1)
- A GaInAsP /InP Tapered-Waveguide Semiconductor Laser Amplifier Integrated with a 1 S pm (1991) (1)
- Fabrication of GaInAsP/InP heterostructure for 1.5 μm lasers by OMVPE (1987) (1)
- GaInAsP/InP MQW Intersectional Optical Switch/Modulator Using Field Induced Refractive Index Variation (1989) (1)
- Inl-,GaxAsyP1-y/lnP DH Lasers Fabricated on InP (1 00) Substrates (1978) (1)
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure (1987) (1)
- Zero‐reflection conditions in atr for measurement of optical constants of metal and low‐refractive‐index dielectric films (1981) (1)
- Room Temperature Operation of GaInAs-GaInAsP-InP SCH (1991) (1)
- Various Light Resonance Mechanisms in Dielectric and Metallic Layers, and a Measurement Procedure for Optical Constants (1981) (1)
- Proposal of novel triode device using metal-insulator superlattice for extremely high speed response (1986) (1)
- Future Trends in Optical Fiber Communications (1991) (1)
- Mass transported 1.55 um GaInAsP/InP BH laser grown by OMVPE (1985) (0)
- (Corrections) A Light Beam Waveguide Using Hyperbolic-Type Gas Lenses (1967) (0)
- Second-harmonic generation in a guided wave structure consisting of quartz coated with glass film (1973) (0)
- Braun‐tube display of Katakana ‘i’ by Kenjirou Takayanagi in the early days of Television Development (2006) (0)
- New type MQW distributed reflector laser (1992) (0)
- Twin-Guide Laser Monolithically Integrated with Amplifier or Detector (1978) (0)
- Towards High Speed Optoelectronics (1990) (0)
- o es and Related Radiation Losses in Optical Dielectric VVaveguides with External Higher Index Surroundings (1974) (0)
- Mass transport buried heterostructure laser using p-InP substrate (1986) (0)
- Computer simulation on beam transmission in optical waveguides between tokyo and osaka (1973) (0)
- Present status of integrated lasers (1988) (0)
- DISTRIBUTED BRAGG REFLECTOR INTEGRATED TWIN-GUIDE LASER IN THE 1. 5 mu M WAVELENGTH. (1982) (0)
- Light polarization control due to electrooptic effect (1985) (0)
- Nonreciprocal phenomena of polarization conversion and anomalous beam shift in multilayered structures containing a film waveguide sandwiched by electrooptic and magnetooptic media (1982) (0)
- A semiconductor laser with distributed Bragg reflector and method of manufacture. (1988) (0)
- Mode-Controlled Galnasp-Inp Long Wavelength Lasers (1981) (0)
- Send in the "Science Volunteers"!. (1995) (0)
- Social function of communication of research information (2005) (0)
- Progress in Distributed Reflector Lasers (1984) (0)
- Room-temperature operation of 1.27-µm-wavelength InGaAsP/InP DH lasers fabricated on InP (1977) (0)
- Low threshold current GaInAsP/InP Integrated Twin Guide Lasers with Distributed Bragg Reflector emitting at 1.55µm (1982) (0)
- Optical switching operation due to field induced refractive-index variation in 1.3 mu m GaInAsP/InP MQW structures (1988) (0)
- Past, present and future of dynamic single-mode semiconductor lasers (2008) (0)
- Wavelength chirp in semiconductor lasers and modulators (1989) (0)
- Reevaluation of Japan’s Highly Developed Technology (2004) (0)
- Superior lasing mode properties of 1.5-µm BIG-DBR lasers by an island-type mesa process (1988) (0)
- Recent Development of InP-based Optoelectronic Devices (1992) (0)
- Recent studies of integrated optics in Japan (1974) (0)
- Progress of Optoelectronics Research in Japan (1997) (0)
- Gaxlnl -xA~yP~ -,/lnP Injection Laser Partially Loaded with First-Order Distributed Bragg Ref lector (1979) (0)
- Gain and loss of GaInAsP/InP (λg=1.5 μm) grown by OMVPE estimated from lasing characteristics (1985) (0)
- Electric field effect in GaInAs/InP quantum wire and quantum box structures and application to intersectional optical switch (1992) (0)
- An Attempt for Industrial-Academic-Governmental Joint Research in the Basic Studies of Device, Material and Process -- Research on Ultimate Manipulation of Atoms and Molecules at the National Institute for Advanced Interdisciplinary Research -- (1996) (0)
- Present Status of Equal Participation in Engineering in Japan (2000) (0)
- Optical switch using semiconductor quantum well structures (1991) (0)
- Semiconductor laser development and its impact (2010) (0)
- High Power Semiconductor Lasers (1987) (0)
- Web Database of Noteworthy Japanese Contributions to Electrical Technologies (2009) (0)
- 1,55μ-m GaInAsP/InP buried heterostructure lasers with multiple p-n current blocking layer entirely grown by low-pressure OMVPE (1986) (0)
- Ga//xIn//1// minus //xAs//yP//1// minus //y/InP INJECTION LASER PARTIALLY LOADED WITH FIRST-ORDER DISTRIBUTED BRAGG REFLECTOR. (1978) (0)
- Integrated Twin-Guide Laser (2018) (0)
- Light sources in optical fiber communications (1985) (0)
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3 µm Wavelength (1981) (0)
- For Leap of Electronic Image Display (2009) (0)
- AlGaAs integrated twin-guide lasers with distributed Bragg reflectors (1977) (0)
- EBX and Mass-Transport Techniques for Phase-Shifted DFB Laser (1985) (0)
- Laser diode noise due to reflection from single-mode optical fibers (1981) (0)
- 1.55µm GaInAsP/InP Distributed Bragg Reflector Integrated Laser Directly Coupled to External Waveguide (1982) (0)
- OMVPE GaInAsP/InP crystal growth for integrated optics (1984) (0)
- Fabrication of GaInAs(P)/InP quantum‐wire structures for lasers and electro‐optical devices (1992) (0)
- Anniversary workshop speakers: Dynamic single mode laser saw the light of day (2016) (0)
- Mode Selectivity and Amplification in Twin-Guide Lasers (1976) (0)
- Semiconductor Lasers in Information and Communication Technology (2010) (0)
- Recent Researches on Guided-Wave Optical Devices in Japan (1976) (0)
- Dynamic-Single-Mode (DSM) Lasers by Integrated Optical Waveguides (1988) (0)
- Guided-wave optics in Japan (A) (1978) (0)
- Birth of Single-Mode Diode Laser at Minimal Loss Band (2022) (0)
- Half century of semiconductor lasers in photonics (2010) (0)
- Temperature Dependence of Threshold Current and Efficiency of GaInAsP/InP Long-Wavelength Lasers Related to Intervalence Band Absorption and Other Nonradiative Carrier Leakage and Recombination (1982) (0)
- Fabrication and Lasing Properties of a Novel Single Longitudinal Mode 1.5 μm GaInAsP/InP Distributed Reflector (DR) Laser (1988) (0)
- Laser diode noise due to raflection from single-mode optical fibers (1981) (0)
- Continuously wavelength-tunable bundle-integrated-guide lasers with distributed Bragg reflector in the 1.5-μm region (1986) (0)
- Recent Progress of Optical Communications (1981) (0)
- Rapid modulation characteristics of 1.5‒1.6-µm GaInAsP/InP distributed-Bragg-reflector integrated twin-guide lasers (1981) (0)
- A Study of Zero-Reflection Conditions in the ATR to Measure Optical Constants of Metal or Low Refractive Index Dielectric Films (1981) (0)
- Anti-Reflecting Mass Transported Windows for InGaAsP/InP Integrated Lasers (1985) (0)
- Growth Conditions and Doping Control in GaInAsP/InP OMVPE (1984) (0)
- Optical Second-Harmonic Generation Due to Guided-Wave Structure Consisting of and Glass Film Quartz (1974) (0)
- Manufacture of band-like semiconductor laser by selective melt-back process (1979) (0)
- Special edition Optical devices. 1 Research trends in optical devices. (1985) (0)
- Electric-Field-Induced Refractive Index Change In Gainasp/Inp Mqw Structures (1988) (0)
- Computer Simulation of a Transmitted Beam on a Light Waveguide between Tokyo and Osaka (1973) (0)
- Progress in Integrated Optics Lasers (1985) (0)
- A classification of behavior of bulk negative-mobility devices derived from a small-signal theory (1968) (0)
- OMVPE grown GaInAsP/InP BH laser on p-type substrate (1985) (0)
- Distributed-reflector GaInAsP/InP dynamic-single-mode lasers for lightwave communications (1987) (0)
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