Yasuhiro Shiraki

Yasuhiro Shiraki's AcademicInfluence.com Rankings

Yasuhiro Shiraki

Physics

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Physics

Yasuhiro Shiraki's Degrees

PhD Physics Stanford University
Masters Physics Stanford University
Bachelors Physics University of Tokyo

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Yasuhiro Shiraki's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE (1986) (1280)
Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells (1992) (413)
Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy (1995) (232)
Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth (1991) (178)
High-mobility strained-Si PMOSFET's (1996) (125)
Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties (1998) (122)
Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot (1997) (111)
Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure (2003) (101)
Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures (2002) (90)
Determination of quadratic nonlinear optical coefficient of AlxGa1−xAs system by the method of reflected second harmonics (1993) (87)
Fabrication technology of SiGe hetero-structures and their properties (2005) (84)
Cubic Rashba spin-orbit interaction of a two-dimensional hole gas in a strained-Ge/SiGe quantum well. (2014) (84)
Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature (2006) (82)
Metalorganic vapor phase epitaxy of GaP1-xNx alloys on GaP (1993) (81)
Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy (1997) (74)
GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices (2001) (73)
Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs (1994) (65)
Growth mode transition and photoluminescence properties of Si1−xGex/Si quantum well structures with high Ge composition (1995) (65)
Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb (1990) (62)
Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy (1992) (62)
Electrical conductivity of disordered layers in GaAs crystal produced by ion implantation (1974) (62)
In-plane strain fluctuation in strained-Si/SiGe heterostructures (2003) (58)
Surface segregation of In atoms and its influence on the quantized levels in InGaAs/GaAs quantum wells (1993) (58)
Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures (2002) (58)
Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion (2008) (56)
Optical anisotropy in wire‐geometry SiGe layers grown by gas‐source selective epitaxial growth technique (1994) (55)
Room-temperature electroluminescence from Si microdisks with Ge quantum dots. (2010) (52)
Realization of crescent‐shaped SiGe quantum wire structures on a V‐groove patterned Si substrate by gas‐source Si molecular beam epitaxy (1993) (51)
SUBLATTICE REVERSAL IN GAAS/SI/GAAS (100) HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY (1998) (47)
Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si (1987) (47)
Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation (1991) (46)
ELECTRICAL PROPERTIES OF OXIDES GROWN ON STRAINED SIGE LAYER AT LOW TEMPERATURES IN A MICROWAVE OXYGEN PLASMA (1994) (46)
Growth and characterization of atomic layer doping structures in Si (1989) (46)
Influence of substrate orientation on surface segregation process in silicon-MBE (1989) (44)
Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures (2003) (44)
Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy (1989) (44)
Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy (1994) (43)
Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks (2007) (43)
Growth and characterization of 28Sin/30Sin isotope superlattices (2003) (42)
Optical studies of deep‐center luminescence in CdS (1974) (42)
Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures (2007) (41)
Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates (2004) (41)
Characterization of Cu doped CdSe thin films grown by vacuum evaporation (2001) (40)
Observation of deep‐level‐free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid source Si molecular beam epitaxy (1992) (40)
Dipole formation at direct-contact HfO2∕Si interface (2007) (39)
Luminescence study on interdiffusion in strained Si1−xGex/Si single quantum wells grown by molecular beam epitaxy (1993) (39)
Gas-source molecular beam epitaxy and luminescence characterization of strained Si1−xGex/Si quantum wells (1994) (39)
Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuum (1978) (38)
Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells (1998) (38)
Dislocation glide motion in heteroepitaxial thin films of Si1−xGex/Si(100) (1993) (38)
Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility (2000) (37)
Photoluminescence investigation on growth mode changeover of Ge on Si(100) (1995) (37)
Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation (1984) (37)
Photoluminescence excitation spectroscopy of GaP1-xNx alloys : conduction-band-edge formation by nitrogen incorporation (1997) (36)
Enhancement of radiative recombination in Si‐based quantum wells with neighboring confinement structure (1995) (36)
Ion Implantation of Nitrogen into Cadmium Sulfide (1972) (36)
Surface Planarization of Strain-Relaxed SiGe Buffer Layers by CMP and Post Cleaning (2003) (36)
MOVPE Growth and Luminescence Properties of GaAsN Alloys with Higher Nitrogen Concentrations (1999) (36)
Observation of lateral confinement effect in Ge quantum wires self‐aligned at step edges on Si(100) (1996) (36)
Optical investigation of interwell coupling in strained Si1−xGex/Si quantum wells (1993) (35)
Absence of Stark shift in strained Si1−xGex/Si type‐I quantum wells (1996) (34)
Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy (1992) (33)
Temperature dependence of transport properties of high mobility holes in Ge quantum wells (2005) (33)
Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy (1997) (33)
Resistance and resistivity of two dimensional electron gas at high magnetic fields (1991) (32)
Compressive strain dependence of hole mobility in strained Ge channels (2005) (30)
Silicon–germanium (SiGe) nanostructures (2011) (30)
Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures (2000) (30)
A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET) (1982) (29)
Low‐temperature formation of polycrystalline silicon films by molecular beam deposition (1982) (29)
Formation of Tensilely Strained Germanium-on-Insulator (2011) (29)
Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates (1998) (28)
Ultrashallow Ohmic contacts for n-type Ge by Sb δ-doping (2010) (28)
Intersubband spectroscopy by photoconductivity and absorption in inversion layers on p-Si(100) (1977) (28)
Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing (2003) (28)
Quantitative analysis of light emission from SiGe quantum wells (1995) (28)
Atomistic picture of interfacial mixing in the Si/Ge heterostructures (1992) (27)
Efficient luminescence from AlP/GaP neighboring confinement structure with AlGaP barrier layers (1995) (27)
Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates (2003) (27)
Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities (2012) (26)
Thin‐film transistors on molecular‐beam‐deposited polycrystalline silicon (1984) (26)
A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs–GaAs Heterostructure (1984) (26)
Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy (1999) (26)
Disappearance of the Breakdown of Quantum Hall Effects in Short Devices. (1995) (25)
Low temperature MBE growth of high quality AlGaAs (1987) (25)
High-temperature operation of strained Si0.65Ge0.35/Si(111) p-type multiple-quantum-well light-emitting diode grown by solid source Si molecular-beam epitaxy (1993) (25)
Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon (2009) (25)
Ni on Si: Interfacial compound formation and electronic structure (1982) (25)
Observation of whispering-gallery modes in Si microdisks at room temperature (2007) (25)
Raman scattering and x-ray absorption studies of Ge–Si nanocrystallization (2002) (25)
Abrupt compositional transition in luminescent Si1−xGex/Si quantum well structures fabricated by segregant assisted growth using Sb adlayer (1993) (24)
Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing (2002) (24)
Polycrystalline‐silicon thin‐film transistors on glass (1980) (24)
Amorphous GaP produced by ion implantation (1976) (24)
Role of heterointerface on enhancement of no‐phonon luminescence in Si‐based neighboring confinement structure (1996) (24)
Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator (2016) (24)
Photoluminescence study of laser annealing in phosphorus‐implanted and unimplanted silicon (1979) (23)
Optical properties of strain-balanced SiGe planar microcavities with Ge dots on SI substrates (2002) (22)
Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF-MBE (2003) (22)
N-type doping of BaSi 2 epitaxial films by phosphorus ion implantation and thermal annealing (2014) (22)
Formation of Embedded Monocrystalline NiSi2 Grid Layers in Silicon by MBE (1984) (22)
Study of adsorption phenomena on aluminium by interatomic Auger transition spectroscopy: I. Initial oxidation of Al (1978) (22)
Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties (1994) (21)
Determination of lattice parameters of SiGe/Si(110) heterostructures (2006) (21)
THE EFFECT OF ELECTRIC FIELD ON THE EXCITONIC STATES IN COUPLED QUANTUM WELL STRUCTURES (1994) (21)
Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities. (2012) (21)
Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer (2000) (21)
PROPERTIES OF SIGE OXIDES GROWN IN A MICROWAVE OXYGEN PLASMA (1995) (21)
Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer (2004) (21)
Transport properties of n-channel Si/SiGe modulation-doped systems with varied channel thickness : effect of the interface roughness (1996) (21)
Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy (1994) (20)
Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films (2011) (20)
Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures (2012) (20)
Silicon molecular beam epitaxy (1985) (20)
Hybrid MBE growth and mobility limiting factors of n-channel {Si}/{SiGe} modulation-doped systems (1997) (20)
Formation and optical properties of SiGe/Si quantum structures (1996) (20)
Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(0 0 1) substrates by metalorganic vapor phase epitaxy (1998) (20)
Modification of the growth mode of Ge on Si by buried Ge islands (2000) (19)
Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping (2006) (19)
Luminescence from Si1-xGex/Si quantum wells grown by Si molecular-beam epitaxy (1993) (19)
Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures (2009) (19)
Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices (2008) (18)
Magnetotransport properties of Ge channels with extremely high compressive strain (2006) (18)
Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures (1993) (18)
Study of adsorption phenomena on aluminium by interatomic Auger transition spectroscopy. II. CO adsorption onto Al (1978) (18)
Photoluminescence observation of donor pairs in silicon (1979) (18)
Observation of resonant electron capture in AlGaAs/GaAs quantum well structures (1992) (18)
Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy (2001) (18)
New method for determining the nonlinear optical coefficients of thin films (1992) (18)
Growth and characterization of 70Ge n / 74Ge n isotope superlattices (2000) (18)
Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors (2008) (18)
Nitrogen concentration dependence of photoluminescence decay time in GaP1−xNx alloys (1997) (17)
Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(1 1 0) substrates by gas-source MBE (2007) (17)
Excitonic Aharonov-Bohm effect in isotopically pure 70Ge/Si self-assembled type-II quantum dots (2010) (17)
Luminescence of strained Si1−xGex/Si quantum wells and microstructures (1995) (17)
Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (1 1 0) Si substrates (2009) (17)
Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature (2013) (17)
Formation process and ordering of self-assembled Ge islands (2000) (17)
Schottky barrier height of single‐crystal nickel disilicide/silicon interfaces (1988) (17)
Intersubbband absorption in narrow Si/SiGe multiple quantum wells without interfacial smearing (1992) (17)
Electrical properties of oxides grown on strained Si using microwave N2O plasma (1997) (16)
Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation (2013) (16)
Formation of relaxed SiGe films on Si by selective epitaxial growth (2000) (16)
Suppression of phonon replica in the radiative recombination of an MBE-grown type-II Ge/Si quantum dot (1998) (16)
Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy (2008) (16)
The optical processes in AlInP/GaInP/AlInP quantum wells (1996) (16)
Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials (2008) (16)
High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate (2009) (16)
Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands (2002) (16)
SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications (2000) (16)
Metal–insulator transition and spin degree of freedom in Silicon 2D electron systems (1999) (16)
Interlayer coherency and angular-dependent magnetoresistance oscillations in quasi-two-dimensional conductors (2003) (15)
Solid-phase epitaxy of NiSi2 layer on Si(111) substrate from Si/Ni multi-layer structure prepared by molecular beam deposition (1986) (15)
An MOS field‐effect transistor fabricated on a molecular‐beam epitaxial silicon layer (1979) (15)
Investigation of luminescence in strained SiGe/Si modulated quantum well and wire structures (1994) (15)
Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures (1998) (15)
Oxidation of strained Si in a microwave electron cyclotron resonance plasma (1997) (14)
Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates (2005) (14)
Incorporation kinetics of rare‐earth elements in Si during molecular beam epitaxy (1995) (14)
Ultrashort lifetime photocarriers in Ge thin films (1996) (14)
Systematic blue shift of exciton luminescence in strained Si1 −s xGex/Si quantum well structures grown by gas source silicon molecular beam epitaxy (1992) (14)
Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots (2009) (14)
New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave (1994) (14)
Interatomic Auger transition spectroscopy as a probe for the study of O2 and CO adsorption on Al (1979) (14)
Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures (2009) (14)
Growth of SiGe/Ge/SiGe heterostructures with ultrahigh hole mobility and their device application (2003) (14)
Two‐dimensional exciton dynamics in InGaAs/GaAs quantum wells (1992) (13)
Is low temperature growth the solution to abrupt Si⧸Si1-xGex interface formation? (1993) (13)
Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method (1995) (13)
Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy (2014) (13)
Edge emissions of ion-implanted CdS (1977) (13)
1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes (1998) (13)
Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy (1991) (13)
Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate (1998) (13)
Optical investigation of growth mode of Ge thin films on Si(110) substrates (1997) (13)
Optical characterization of strain-induced structural modification in SiGe-based heterostructures (1999) (13)
High-Quality-Factor Light-Emitting Diodes with Modified Photonic Crystal Nanocavities Including Ge Self-Assembled Quantum Dots on Silicon-On-Insulator Substrates (2012) (13)
MBE-Related Surface Segregation of Dopant Atoms in Silicon (1988) (13)
Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation (2008) (13)
Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates (2002) (12)
SiGe heterostructure field-effect transistor using V-shaped confining potential well (2003) (12)
Photoluminescence observation of swirl defects and gettering effects in silicon at room temperature (1978) (12)
Surface orientation dependence of growth rate of cubic GaN (1994) (12)
(Invited) Electroluminescence from Micro-Cavities of Photonic Crystals, Micro-Disks and Rings Including Ge Dots Formed on SOI Substrates (2012) (12)
Hybrid Si molecular beam epitaxial regrowth for a strained Si1−xGex/Si single‐quantum‐well electroluminescent device (1993) (12)
Anomalous luminescence peak shift of SiGe/Si quantum well induced by self-assembled Ge islands (1997) (12)
Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers (2005) (12)
Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells (1997) (12)
The effect of strain field seeding on the epitaxial growth of Ge islands on Si(001) (2001) (12)
Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine (1994) (12)
Sub‐100 nm pattern formation using a novel lithography with SiNx resist by focused ion beam exposure and dry‐etching development (1993) (11)
Optical Properties of Cubic GaN Grown on 3C-SiC (100) Substrates by Metalorganic Vapor Phase Epitaxy (2000) (11)
Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures (2005) (11)
Fabrication of SiGe/Si quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy (1994) (11)
Anomalies in photoluminescence linewidth of InGaAs/GaAs strained-layer quantum wells (1992) (11)
Carrier localization in GaP/AlP type-II heterostructures in high magnetic fields (2001) (11)
Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(1 1 0) substrates (2009) (11)
Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe (2006) (11)
Stacked Ge islands for photovoltaic applications (2003) (11)
Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic AlxGa1−xN (1998) (11)
Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion (2015) (10)
Anomalous mobility enhancement in Si doping superlattices (1986) (10)
High quality NiSi2/Si epitaxial films grown by MBE (1987) (10)
Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells (1993) (10)
Composition profile of an AlGaAs epilayer on a V‐grooved substrate grown by low‐pressure metalorganic vapor phase epitaxy (1995) (10)
Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices (2009) (10)
Photoluminescence investigation on growth mode changeover in Ge-rich Si1−xGex/Si strained quantum wells (1995) (10)
MOVPE growth and characterization of high‐N content InGaPN alloy lattice‐matched to GaP (2003) (10)
Atomic Layer Doping (ALD) technology in Si and its application to a new structure FET (1989) (10)
Postgrowth of a Si contact layer on an air‐exposed Si1−xGex/Si single quantum well grown by gas‐source molecular beam epitaxy, for use in an electroluminescent device (1995) (10)
Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1−x)Gex surfaces (2005) (10)
Metalorganic vapor-phase epitaxy of GaP1-x-yAsyNx quaternary alloys on GaP (1998) (10)
Effects of growth temperature in selective-area growth of cubic GaN on GaAs (100) by MOVPE (2002) (10)
Room temperature photoluminescence in strained Si1−xGex/Si quantum wells (1994) (10)
Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique (2010) (10)
Structural, compositional and optical properties of self-organised Ge quantum dots (2001) (10)
Fabrication of ultrafine gratings on GaAs by electron beam lithography and two‐step wet chemical etching (1990) (9)
Temperature dependence of photoluminescence of GaP1−xNx alloys (1998) (9)
Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities (2012) (9)
Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions (2004) (9)
Relationship between Stark-cyclotron resonance and angular dependent magnetoresistance oscillations (2002) (9)
Time‐of‐flight measurement of carrier transport and carrier collection in strained Si1−xGex/Si quantum wells (1994) (9)
Photoluminescence topographic observation of defects in silicon crystals (1978) (9)
Investigation of luminescence properties of GaN single crystals grown on 3C-SiC substrates (1998) (9)
Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates (2001) (9)
Experimental studies of the phase coherence in the quantum Hall effect regime (1997) (9)
Optical investigation of modified Stranski–Krastanov growth mode in the stacking of self-assembled Ge islands (2000) (9)
Drastic increase of the density of Ge islands by capping with a thin Si layer (2000) (9)
Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method (2009) (9)
Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique (2008) (9)
Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates (1997) (9)
Changes in elastic deformation of strained Si by microfabrication (2005) (9)
Reduction of Planar Defect Density in Laterally Overgrown Cubic‐GaN on Patterned GaAs(001) Substrates by MOVPE (2002) (9)
Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy (2013) (9)
Electronic transport properties of the Ising quantum Hall ferromagnet in a Si quantum well. (2008) (8)
Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well (1993) (8)
In-plane transport of excitons in quantum well structures (1993) (8)
Optical Properties of Strain-Balanced Si0.73Ge0.27 Planar Microcavities on Si Substrates (2001) (8)
Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy (1999) (8)
Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer (2014) (8)
Resonant photoluminescence from Ge self-assembled dots in optical microcavities (2009) (8)
Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique (2007) (8)
Radiative recombination in near‐surface strained Si1−xGex/Si quantum wells (1995) (8)
Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures (1999) (8)
Phase coherence of edge states over macroscopic length scales (1998) (8)
Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation (2011) (8)
Optical transitions in cubic GaN grown on GaAs(1 0 0) substrates by metalorganic vapor-phase epitaxy (1998) (8)
Well-width dependence of valley splitting in Si/SiGe quantum wells (2009) (8)
Observation of the Stark effect in coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation spectroscopy (1994) (8)
Growth of InGaAs/GaAs strained quantum wells on GaAs(111)B substrates and continuous wave operation of (111)-oriented InGaAs strained quantum well lasers (1995) (8)
Nitrogen centers in GaP produced by hot implantation (1976) (8)
Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well (2008) (8)
p-type Ge channel modulation doped heterostructures with very high room-temperature mobilities (2000) (8)
Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substrates (1995) (7)
Self-modulating Sb incorporation in Si/SiGe superlattices during molecular beam epitaxial growth (1993) (7)
Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction (2003) (7)
Substrate Misorientation Dependence of the Hexagonal Phase Inclusion in Cubic GaN Films Grown by Metalorganic Vapor Phase Epitaxy (1999) (7)
Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon (2011) (7)
Temperature Dependence of Excitonic Γc–Γv Transition Energies of GaxIn1-xP Crystals (2001) (7)
Field-driven blue shift of excitonic photoluminescence in SiGe quantum wells and superlattices (1995) (7)
Metalorganic vapor-phase epitaxy of cubic GaN on GaAs (1 0 0) substrates by inserting an intermediate protection layer (2000) (7)
Strain field and related roughness formation in SiGe relaxed buffer layers (2006) (7)
Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate (1992) (7)
Spontaneous emission alteration in InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures (1999) (7)
Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels (2008) (7)
Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si (1998) (7)
Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures (2002) (7)
Formation of compressively strained SiGe/Si(110) heterostructures and their characterization (2013) (7)
Spectral modulation of luminescence of strained Si1−xGex/Si quantum wells in a vertical cavity with air/Si and Si/SiO2 interface mirrors (1994) (7)
Efficient green luminescence from a type-II neighboring confinement structure realized in an AlPGaP system (1996) (7)
Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method (2005) (7)
Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer (2008) (7)
Compositional Latching in GaAs1-xPx/GaAs Metalorganic Vapor Phase Epitaxy (1991) (7)
Influence of disorder on luminescence from pseudorandomized strained Si1−xGex/Si superlattices (1996) (7)
Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well (2012) (7)
Formation of thin SiGe virtual substrates by ion implantation into Si substrates (2004) (7)
Improved luminescence quality with an asymmetric confinement potential in Si‐based type‐II quantum wells grown on a graded SiGe relaxed buffer (1996) (7)
Anomalous diamagnetic shift of excitons in II–VI quantum dots and in indirect short period superlattices (2002) (7)
Deposition of SiO2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition (1995) (7)
Fabrication of strain-balanced Si/Si1?xGex multiple quantum wells on Si1?yGey virtual substrates and their optical properties (2001) (7)
Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature (2008) (7)
Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions (2008) (7)
Self-aligned NiSi2 electrode fabrication by MBE and its application to etched-groove Permeable Base Transistor (PBT) (1989) (7)
Redistribution of delta-doped Sb in Si (1991) (6)
Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges (1999) (6)
Fabrication of strain-balanced Si0.73Ge0.27/Si-distributed Bragg reflectors on Si substrates for optical device applications (2002) (6)
Resonant photoluminescence from Ge microdisks on Ge-on-insulator (2014) (6)
Strain-induced lateral band gap modulation in Si1−xGex/Si quantum well and quantum wire structures (1995) (6)
Gas-source molecular beam epitaxial growth of SiGe alloy-based `naked' quantum wells (1998) (6)
A 10×10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display (1983) (6)
Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates (2007) (6)
Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy (1999) (6)
Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures using circularly polarized photoluminescence excitation spectroscopy (1993) (6)
Geometry-dependent resistances of two-dimensional electron gas at high magnetic fields (1992) (6)
Photoluminescence study of Si1−xGex/Si surface quantum wells (1997) (6)
Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate (2007) (6)
Waveguide-integrated microdisk light-emitting diode and photodetector based on Ge quantum dots. (2014) (6)
Thermal stability of Ge channel modulation doped structures (2001) (6)
Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells (1994) (6)
Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(0 0 1) substrate (2007) (6)
NEW ELECTRON PARAMAGNETIC RESONANCE IN NITROGEN-ION-IMPLANTED CdS. (1971) (6)
Redistribution of Sb in an atomic‐layer‐doped Si (1991) (6)
Wavy interface morphologies in strained multilayers on vicinal Si(111) substrates (1998) (6)
Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon (2011) (6)
Direct observation of exciton localization in a GaAs/AlGaAs quantum well (1994) (6)
Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots (2003) (6)
Use of L 1 L 2 , 3 V Auger transitions for an electronic-structure study of the A1—Si(111)-(2×1) interface (1981) (6)
Computer simulation of a new MESFET with an atomic-layer-doped structure (1988) (6)
GaAs1-xPx Light Emitting Diodes Produced by Zn Ion Implantation. I. Dose Dependence of Properties of Implanted Diodes (1975) (6)
Second-Harmonic Generation from GaP/AlP Multilayers on GaP (111) Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave (2000) (6)
Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields (2010) (6)
Observation of electroluminescence above room temperature in strained p-type Si0.65Ge0.35/Si(111) multiple quantum wells (1993) (6)
Silicon Molecular Beam Deposition (1985) (6)
(Invited) Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS (2010) (5)
Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si+ Ion Implantation (2012) (5)
Reverse temperature dependence of Sb sticking on Si(100) surfaces (2002) (5)
Why is a quantum-confined stark shift absent in type-I strained symmetric quantum wells? (1997) (5)
A New Device Structure Utilizing Atomic Layer Doping (ALD) Technology in Si Systems (1988) (5)
Local Ga implantation with focused ion beam and ambipolar lateral carrier transport in strained Si1−xGex /Si quantum wells (1994) (5)
Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP1-xNx Alloys: A Growth Interruption Study (1997) (5)
Nonlocal nature of the breakdown of the integer quantum Hall effects (1996) (5)
Role of shallow impurities and lattice defects in nucleation of electron-hole droplets in Si (1981) (5)
Spontaneous-emission-lifetime alteration in In x Ga 1 − x As /GaAs vertical-cavity surface-emitting laser structures (1997) (5)
Interfacial roughness of ? multilayer structures on Si(111) probed by x-ray scattering (1997) (5)
Tensile‐strained GaAsP/AlGaAs quantum wells grown by low‐pressure metalorganic vapor phase epitaxy (1995) (5)
Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method (2001) (5)
EFFECT OF THE INSERTION OF AN ULTRATHIN ALP LAYER ON THE OPTICAL PROPERTIES OF GAASP/GAP QUANTUM WELLS (1999) (5)
Cubic GaN Films on GaAs (001) Substrates without Deep-Level Luminescence Grown by Metalorganic Vapor Phase Epitaxy (2000) (5)
Metalorganic vapor phase epitaxial growth and luminescence properties of GaAs/GaAsP quantum wires (1994) (5)
Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime (2004) (5)
Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 °C (2004) (5)
Room-temperature light-emission from Ge quantum dots in photonic crystals (2008) (5)
Size reduction of the Ge islands by utilizing the strain fields from the lower-temperature-grown hut-clusters buried in the Si matrix (2002) (5)
Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si (2004) (5)
Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems (2011) (5)
Conductance Anomalies and Electronic States in Silicon Inversion Layers near Threshold at Low Temperatures (1977) (5)
Hole confinement and dynamics in δ-doped Ge quantum dots (2004) (5)
Spectroscopic study of Si-based quantum wells with neighbouring confinement structure (1997) (5)
Determination of band-gap discontinuity in AlGaAs/GaAs system by quantum oscillations of photoluminescence intensity (1986) (5)
Intersubband absorption in n-type Si⧸Si1−xGex multiple quantum well structures formed by Sb segregant-assisted growth (1993) (5)
Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels (2011) (5)
Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface (1988) (4)
Photoconductivity of silicon inversion layers (1977) (4)
Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures (2001) (4)
On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures (2008) (4)
Tensile-strained, heavily n-doped germanium-on-insulator for light emitting devices on silicon (2014) (4)
A highly luminescent crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire laser structure (1997) (4)
Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves (2003) (4)
Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (1 1 1) B substrates by MOVPE (2000) (4)
On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique (2013) (4)
Reflectance characterization of semiconductor quantum wells by Fourier transform spectroscopy (1991) (4)
Intense photoluminescence from strained Si1-xGex⧸Si quantum well structures (1993) (4)
The Γc–Γv Transition Energies of AlxIn1-xP Alloys (1997) (4)
MAGNETOPHOTOLUMINESCENCE SPECTROSCOPY OF ALGAP-BASED NEIGHBORING CONFINEMENT STRUCTURES (1999) (4)
Electrically biased photoreflectance study of cubic GaN/GaAs(001) heterointerface (2003) (4)
Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system (2006) (4)
Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl4 Reactive Ion Etching (1990) (4)
Microstructures, defects, and localization luminescence in InGaAsN alloy films (2003) (4)
Core-exciton spectra of AlxGa1−xAs studied with synchrotron radiation (1982) (4)
Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure (1995) (4)
Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE (2002) (4)
High-performance SiGe heterostructure FET grown on silicon-on-insulator (2005) (4)
Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates (2009) (4)
Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers (1997) (4)
Magneto-photoluminescence spectra of GaP/AlP short-period superlattices in high magnetic fields and uniaxial pressures (1998) (4)
Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures (2006) (4)
Characterization of microcrystalline silicon by Hall and photo-Hall measurements (1983) (4)
Photoluminescence of Si/SiGe/Si quantum wells on separation by oxygen implantation substrate (1994) (4)
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1−xGex for MOS applications (1999) (4)
Characterization of SiGe quantum wire structures by cathodoluminescence imaging and spectroscopy (1995) (4)
Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping (2007) (4)
Ge quantum dots light-emitting devices (2012) (4)
Laterally Overgrown GaN on Patterned GaAs (001) Substrates by MOVPE (2002) (4)
Optical anisotropies of Si grown on step-graded SiGe(110) layers (2010) (3)
Anomalous spectral shift of photoluminescence from MBE-grown strained Si 1−x Ge x /Si quantum wells mediated by atomic hydrogen (1995) (3)
Local control of strain in SiGe by ion-implantation technique (2009) (3)
Systematic study of 3d transition metal-silicon interfaces by photoemission (1983) (3)
Oscillator strength of higher-subband excitons in InGaAs/GaAs quantum wells (1995) (3)
Nucleation of electron-hole droplets at swirl defects in silicon (1978) (3)
Metallic behavior of cyclotron relaxation time in two-dimensional systems. (2011) (3)
Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping (2006) (3)
High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates. (1999) (3)
Effects of tensile strain on the optical properties of an AlGaP-based neighbouring confinement structure (1997) (3)
The properties of SiO2 films using direct photo-chemical vapor deposition on strained SiGe layers (1996) (3)
Selective Area Growth of GaN and Fabrication of GaN/AlGaN Quantum Wells on Grown Facets (2001) (3)
Efficient carrier blocking by an attractive potential in strained Si1−xGex/Si single quantum well (1996) (3)
GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy (1998) (3)
Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well (2008) (3)
Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates (2004) (3)
Photoluminescence from submonolayer Ge embedded in Si(100) (1996) (3)
Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves (2014) (3)
Photoluminescence study of (111)‐oriented GaAs/GaAsP strained‐layer quantum well structure (1994) (3)
Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films (1995) (3)
Room-temperature quantum interference in an asymmetric triple-barrier resonant-tunnelling diode (1996) (3)
Luminescence study on Ge islands as stressors on quantum well (1997) (3)
Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate (2006) (3)
Optical property of GaAsP/AlGaAs strained‐layer quantum well grown on GaAs‐(111)B substrate (1995) (3)
Self-diffusion in compressively strained Ge (2011) (3)
GaAs1-xPx Light Emitting Diodes Produced by Zn Ion Implantation. II. Photoluminescence of p-Type Layers Formed by Ion Implantation and Diffusion (1975) (3)
Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy (2018) (3)
Upper Limit of Two-Dimensional Hole Gas Mobility in Ge/SiGe Heterostructures (2012) (3)
Erratum: ‘‘Electrical properties of oxides grown on strained SiGe layer at low temperatures in a microwave oxygen plasma’’ [Appl. Phys. Lett. 65, 895 (1994)] (1995) (3)
Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates (2014) (3)
New strain-relieving microstructure in pure-Ge/Si short-period superlattices (1998) (3)
Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well (2008) (2)
Spin-dependent nonlocal resistance in aSi∕SiGequantum Hall conductor (2007) (2)
Built‐in electric field at cubic GaN/GaAs(001) heterointerfaces investigated by phase‐selected photoreflectance excitation (2004) (2)
Formation of uniaxially strained SiGe by selective ion implantation technique (2010) (2)
In-plane potential modulation in tensilely strained AlGaP-based neighboring confinement structure (1998) (2)
A high performance molecular beam epitaxy system equipped with the automatic substrate transport mechanism (1986) (2)
Room-Temperature Observation of Size Effects in Photoluminescence of Si0.8Ge0.2/Si Nanocolumns Prepared by Neutral Beam Etching (2012) (2)
Geometry-dependent transition between integer quantum-Hall states (1998) (2)
Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell (1998) (2)
Optical characterization of band-edge lineups in GaAs/GaAs1−xPx strained-layer quantum wells (1992) (2)
Carrier activation process in As+ implanted relaxed Si1−xGex alloys (2000) (2)
Chapter 5 Epitaxial growth techniques: Molecular beam epitaxy (2001) (2)
Microdisk enhanced photodetector based on Ge self-assembled quantum dots on silicon-on-insulator (2014) (2)
GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy (1993) (2)
High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography (2006) (2)
Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substrates (1998) (2)
Photoluminescence of Erbium Implanted in SiGe (1995) (2)
Solid- and gas-source “hybrid” Si molecular beam epitaxy for a Si1−xGex/Si single quantum well electroluminescent device (1994) (2)
Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substrates (2013) (2)
Observation of spatially-indirect transition and accurate determination of band offset ratio by excitation spectroscopy on GaAs/AlGaAs quantum wells lightly doped with Be acceptors (1995) (2)
Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation (2010) (2)
Growth temperature dependence of AlGaAs spontaneous vertical quantum wells on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy (1996) (2)
Cyclotron resonance of two-dimensional electrons in a Si quantum well (2010) (2)
Photoluminescence study of the optical properties of SiGe quantum wells on separation by implanted oxygen substrates (1997) (2)
Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells (1996) (2)
Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer (2000) (2)
SAT-based resource binding for reducing critical path delays (2008) (2)
Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer (2013) (2)
Raman spectra of 70Ge/76Ge isotope heterostructures with argon 488 and 514.5 nm excitations (2002) (2)
Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs) (1997) (2)
MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP (1997) (2)
Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method (2013) (1)
Effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure (1998) (1)
AlGaAs QPM waveguides fabricated by GaAs/Ge/GaAs [100] sublattice reversal epitaxy (2000) (1)
Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates (1998) (1)
Effect of growth interruption on the interface flatness in metalorganic vapor phase epitaxy-grown GaAs/GaAsP heterostructures (1994) (1)
In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system (2012) (1)
Strain dependence of hole Hall mobility in compressively strained Ge channel heterostructures (2006) (1)
Electroluminescence and Photoluminescence of N+ Implanted CdS (1973) (1)
SiGe Quantum Structures (1998) (1)
Incorporation kinetics of rare earth impurities in Si during molecular beam epitaxy (1995) (1)
Reflected second-harmonic ellipsometry - a new tool for determining the nonlinear optical coefficients of thin films (1994) (1)
Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy (1999) (1)
Formation of SiGe Heterostructures and Their Properties (2010) (1)
Strain Seeding of Ge Quantum Dots Grown on Si (001) (2001) (1)
Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices (2009) (1)
Corrigendum to ‘‘Changes in elastic deformation of strained si by microfabrication’’: [Materials Science in Semiconductor Processing 8 (2005) 181–185] (2005) (1)
Influences of /spl delta/-doping position on the characteristics of SiGe-Si DCFETs (2004) (1)
New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication (2008) (1)
Lateral PIN current-injected photonic crystal nanocavity light emitting diodes based on Ge quantum dots (2012) (1)
Highly luminescent cubic GaN microcrystals grown on GaAs(001) substrates by RF‐MBE (2004) (1)
Observation of dislocations in strain-relaxed silicon–germanium thin films with flat surfaces grown on ion-implanted silicon substrates (2004) (1)
Resonant Photoluminescence from Microdisk Based on N-Doped, Tensile-Strained Ge on Si (2013) (1)
Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)A GaAs substrates and its room-temperature operation (1997) (1)
Fabrication of high-Ge fraction relaxed SiGe-On-Insulator virtual substrate by MBE growth and thermal annealing (2002) (1)
Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer AlP for electron localization (1998) (1)
A Si1-xGex/Si single quantum well p-i-n structure grown by solid-source and gas-source hybrid Si molecular beam epitaxy (1994) (1)
Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells (1994) (1)
Optical Properties of Excitons in Semiconductor Quantum Wells (1995) (1)
Papers presented at the European Materials Research Society 1992 Spring Conference, Symposium A: SiGe based technologies, Strasbourg, France, June 2-4, 1992 (1992) (1)
Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties (2007) (1)
AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS (2013) (1)
Crucial role of Si buffer layer quality in the photoluminescence efficiency of strained Si1−xGex/Si quantum wells (1995) (1)
Hole transport properties of B-doped relaxed SiGe epitaxial films grown by molecular beam epitaxy (2003) (1)
Formation and Optical Properties of SiGe/Si Heterostructures (1993) (1)
Photoconductivity and Electroreflectance Study of Cubic GaN/GaAs(001) Heterostructures by Optical‐Biasing Technique (2002) (1)
P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor (2003) (1)
Optical transition energies of GaInP quantum wells with GaInP/AlInP superlattice barriers (1994) (1)
Formation and Properties of SiGe/Si Quantum Wire Structures (1995) (1)
Growth of vertical cavity on buried‐oxide substrate by gas‐source Si molecular‐beam epitaxy and coupled mode luminescence of strained Si1−xGex/Si quantum wells (1995) (1)
Cyclotron resonance in the two-dimensional metallic phase of Si quantum wells (2011) (1)
Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers (2006) (1)
Formation of negatively-charged excitons and charge transfer in quantum dots (1999) (1)
Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands (2001) (1)
Study of HfO2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy (2010) (1)
Photoluminescence Observation of Defects in Silicon (1978) (1)
On optimum design of dislocation filters for reduction of misfit dislocations (1993) (1)
Anomalous optical absorption in ZnCdSe/ZnSe single quantum wells (1996) (1)
Interwell Coupling in Strained Si1-xGex/Si Quantum Wells (1993) (1)
Transport Properties of Polycrystalline SiGe Thin Films Grown on SiO 2 (2004) (1)
P-type delta-doped SiGe/Si heterostructure field effect transistors (2002) (1)
Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure (2004) (1)
Strain Effects of Ge Islands on Si1-xGex/Si Quantum Well (1996) (1)
Formation of High Quality SiGe/Si Heterostructures (1993) (1)
Temperature dependence of photoluminescence linewidth in GaAs/GaAsP strained‐layer quantum well structures (1994) (1)
A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor (2002) (1)
Filling factor dependence of electron effective mass in Si/SiGe quantum wells at high magnetic field (2001) (1)
Fabrication of p-i-n Si/sub 0.5/Ge/sub 0.5/ photodetectors on SiGe-on-insulator substrates (2004) (1)
Cavity mode luminescence of strained Si1−xGex/Si quantum wells grown on a buried-oxide substrate (1995) (1)
Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well (2009) (1)
Annealing effects on mobility-limiting mechanisms in modulation doping Si/Si0.8Ge0.2heterostructures (1999) (1)
Improved quantum efficiency of solar cells with Ge dots stacked in multilayer structure (2003) (1)
Electrical Detection and Magnetic Field Control of Superposition States of Hydrogenic Donors in Silicon (2009) (0)
Enhanced Light-emission from Crystalline Silicon in Microdisk Resonators (2007) (0)
Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates (1998) (0)
High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy (1997) (0)
Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures (2008) (0)
Extremely High Hole Mobility in SiGe/Ge/SiGe/ Heterostructures Characterized by Mobility Spectrum Analysis (2001) (0)
Erratum: ‘‘Efficient luminescence from AIP/GaP neighboring confinement structure with AlGaP barrier layers’’ [Appl. Phys. Lett. 67, 1048 (1995)] (1996) (0)
Very high mobility 2D holes in strained Ge quantum well epilayers grown by Reduced Pressure Chemical Vapor Deposition (2010) (0)
TEM Observation of Si 0 . 99 C 0 . 01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing (2016) (0)
A novel vacuum lithography with SiNx resist for focused ion beam exposure and dry etching development (2008) (0)
(Invited) XPS Study on Chemical Bonding States of high-κ/high-μ Gate Stacks for Advanced CMOS (2019) (0)
Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures (2008) (0)
Observation of the Stark Effect in GaAs/AlGaAs Coupled Quantum Wells by Electroluminescence and Circularly Polarized Photoluminescence Excitation (1993) (0)
Quantum well luminescence in epitaxial Si1-xGex/Si strained layers (1994) (0)
Periodically domain-inverted AlGaAs quasi-phase-matched frequency-conversion waveguides (2000) (0)
Growth of ultrahigh mobility SiGe/Ge/SiGe heterostructures with very small parallel conduction and their device application (2002) (0)
The Γ_c-Γ_v Transition Energies of Al_xIn_ P Alloys (1997) (0)
Fabrication of SiGe DBR mirrors and microcavities (2004) (0)
New solar cells using Ge dots embedded in Si PIN structures (2004) (0)
Time‐resolved photoluminescence study on AlxGa1−xAs spontaneous vertical quantum well structures (1996) (0)
Spontaneous oscillator strength modulation in MBE-grown Si/Ge superlattices (1998) (0)
Ge quantum dots light-emitting devices (2012) (0)
Enhanced Light Emission from Ge Quantum Dots in Microdisks (2007) (0)
Subband structure and effective mass of two dimensional hole gas in strained Ge channels (2012) (0)
Photoreflectance and Photoluminescence Study of Direct-and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells (1994) (0)
Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy (2000) (0)
MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter (1988) (0)
Valley-splitting edge-channel transport in a Si/SiGe quantum Hall system (2008) (0)
Magneto-optical and cyclotron resonance study of semiconductor nanostructures in very high magnetic fields (2002) (0)
Gas-Source Molecular Beam Epitaxial Growth of Crescent-Shaped SiGe Quantum Wire Arrays on a V-Groove Patterned Si Substrate (1993) (0)
Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals (2001) (0)
MBE-Grown NiSi2/Si Heterostructure and its Schottky Properties (1985) (0)
Excitonic Band Edge Luminescence in Strained Si1-xGex/Si Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy (1992) (0)
Angular dependent magnetoresistance oscillations in senliconductor superlattices with incoherent interlayer coupling (2000) (0)
Ge Quantum Dots‐Based Light Emitting Devices (2015) (0)
Fabrication and characterization of Si/SiGe quantum dots with capping gate (2012) (0)
Technical Report of ISSP Ser. A: Number 2942 (1995) (0)
Physics and Control of Si/Ge Heterointerfaces (1996) (0)
Surface segregation of Iln atoms during molecular beam epitaxy and its influence on the energy levels in InGaAsfGaAs quantum we (1999) (0)
Exciton Diffusion and Carrier Collection in Strained Si1-xGex/Si Quantum Wells (1993) (0)
Room-temperature photonic crystal nanocavity light emitting diodes based on Ge self-assembled quantum dots (2012) (0)
GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE (1997) (0)
Dispositif semiconducteur à film semiconducteur polycristallin (1981) (0)
Optical Detection of Interdiffusion in Strained Si1-xGex/Si Single Quantum Well Structures (1993) (0)
Luminescence in Strained Si1-xGex/Si Quantum Wells (1993) (0)
Study of a Pure-Ge/Si Short-Period Superlattice by X-Ray Double Crystal Diffraction (1999) (0)
Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels (2007) (0)
SiGe Planar Microcavities With Strain-Balanced SiGe/Si Distributed Bragg Reflectors (2002) (0)
Photoluminescence from pure-Ge/pure-Si neighboring confinement structure (1998) (0)
Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping (2011) (0)
Giant negative magnetoresistance in two-dimensional antidot arrays: ballistic orbital effect and ballistic weak localization (2001) (0)
Blue-Shifted Photoluminescence from GaAs/AlGaAs Quantum-Well Box Fabricated by Low-Damage Wet Chemical Etching (1994) (0)
Luminescence Enhancement in Indirect Band-Gap Semiconductors With Quantum Confinement Structures (2000) (0)
Magnetic Field and Pressure Effects of Photoluminescence in a GaP/AIP Short-Period Superlattice (2001) (0)
Surface treatments of SiGe for scanning tunneling microscopy/spectroscopy and characterization of SiGe p-n junction (2007) (0)
MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates (1993) (0)
Combination of Ge Self-Assembled Quantum Dots and Photonic Crystal for Silicon Photonic Devices (2012) (0)
Landau level crossing and enhanced g-factor of a 2-dimentional hole gas in Ge/SiGe quantum well (2013) (0)
Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphere (2008) (0)
Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition (2008) (0)
Ultra-Smooth Heteroepitaxial NiSi2, Films on Silicon Grown by Molecular Beam Epitaxy (1983) (0)
Room temperature 1.55 μm electroluminescence from Ge quantum dots embedded in H1-type photonic crystal nanocavities using lateral current injection (2012) (0)
25p-S-6 Study of Si/Ge/Si Heterostructure on Si(001) by X-Ray Diffraction (1992) (0)
Exciton diffusion dynamics in SiGeSi quantum wells on a V-groove patterned Si substrate (1996) (0)
Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET (2012) (0)
Highly efficient semiconductor second-harmonic generator based on a new quasi-phase-matching scheme for cavity-enhanced fundamental standing wave (1994) (0)
Landau Level Crossing and Anti-crossing of Bilayer Two-dimensional Hole Gas in Ge/SiGe Quantum Well (2013) (0)
Electric field control of cubic-Rashba spin orbit interaction in two-dimentional hole gas confined in Ge/SiGe quantum well (2014) (0)
Current-injected light emitting device based on Si microdisk with Ge dots (2009) (0)
Ge Self-Diffusion in Compressively strained Ge Grown on Relaxed Si 0.2 Ge 0.8 (2010) (0)
Surface Modification of Cubic Gan Buffer Layer Grown by Metalorganic Vapor Phase Epitaxy (2000) (0)
Interwell Coupling in Strained Si 1-* Ge * / Si Quantum (0)
Ultrafine AlGaAs/GaAs Quantum-Well Wire Fabrication by Combining Electron Beam Lithography and Two-Step Wet Chemical Etching (1992) (0)
A multilayered semiconductor secondharmonic generator based on a new scheme of phase-matching in a cavity (1994) (0)
Photoluminescence of SiGe Quantum Wells Grown on SIMOX by Gas Source MBE (1994) (0)
Controlled Photoluminescence from Ge Quantum Dots in Photonic Crystal Microcavities (2006) (0)
Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping (2006) (0)
Effect of Si diffusion on growth of GeSi self-assembled islands (2001) (0)
Exciton Diffusion and Carrier Collection in Strained Si 1-* Ge * / Si Quantum (0)
Mobility Limiting Factors of n-Channel Si/SiGe Modulation-Doped Systems with Varied Channel Thickness (1996) (0)
Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors (2000) (0)
Two-dimensional Photonic Crystal Microcavity with Germanium Self-assembled Quantum Dots (2006) (0)
Built-in Electric Field Strength in InP/n+-InP Determined by Photoellipsometry and Photoreflectance (1996) (0)
CdS ELECTROLUMINESCENT DIODES PRODUCED BY NITROGEN ION IMPLANTATION (1972) (0)
Defect-Free Nitrogen Implantation into GaP (1975) (0)
DYNAMICS OF SPATIALLY INDIRECT EXCITONS IN SEMICONDUCTOR HETEROSTRUCTURES IN MAGNETIC FIELDS (2007) (0)
Abstracts of articles to be published in the journal of physics and chemistry of solidsEdge emissions of ion-implanted CdS (1977) (0)
Segregant-Assisted Growth of SiGe/Si Heterostructures and their Optical Properties (1993) (0)
27p-ZN-9 Dependence of Dislocation Velocity on Dislocation Segment Length in Si_ Ge_X/Si(100) (1992) (0)
Beam Deflection and Mode Switching Characteristics in Coupled Twin-Stripe Lasers (1991) (0)
Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures) (1997) (0)
Fabrication of SiGe Virtual Substrates by Ion Implantation Technique (2007) (0)
Temperature Dependence of Excitonic .GAMMA.c-.GAMMA.v Transition Energies of GaxIn1-xP Crystals. (2001) (0)
Landau level crossing and pseudospin phase transitions in Si quantum wells (2010) (0)
Invited Luminescence in Strained Sir-* Ge * / Si Quantum (0)
TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing (2017) (0)
25pYK-12 Phonons in ^ Ge_n/^ Ge_n Isotope Superlattices (1999) (0)
Phase-transition-like annealing behaviour of heavily implanted GaP (1974) (0)
Composional Latching in GaAs1-xPx/GaAs MOVPE (1990) (0)
Thermal Stability of strained-SOI (sSOI) (2006) (0)
Magnetoresistance of semiconductor superlattices under high eletric fields (2001) (0)
Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth (1993) (0)
Silicon photonic devices with Ge quantum dots as light sources (2007) (0)
Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (2004) (0)
Gigantic oscillations in field-effect mobilities observed in ∼ 150 nm width MOSFETs (1986) (0)
Temperature, electron density and in-plane magnetic field dependence of cyclotron relaxation time in the two-dimensional metallic phase (2013) (0)
Self-diffusion in compressively strained (2011) (0)
微小共振器中 Ge 量子ドットによる Si 系発光素子 Si-based Light Emitting Devices with Ge Quantum Dots Embedded in Optical Microcavities (2015) (0)
Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures (1994) (0)
Suppression of Interfacial Mixing in Si/Ge Superlattices by Sb Deposition (1990) (0)
Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures (2011) (0)
Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-Controlled with Selective Ion Implantation (2013) (0)
QUANTUM-CONFINED STARK SHIFT OBSERVED BY ELECTROLUMINESCENCE AND CIRCULARPOLARIZED LUMINESCENCE EXCITATION SPECTROSCOPY IN GAAS/ALGAAS COUPLED QUANTUM WELLS (1994) (0)
Demonstration of High Mobility Holes in a Strained Ge Channel Grown on a Novel Thin and Relaxed SiGe/LT-SiGe/Si(001) Virtual Substrate (2008) (0)
(Invited) Narrow Linewidth, Highly Efficient, and Integrated Light Emitting Diodes Based on Ge Quantum Dots in Optical Microcavities (2014) (0)
Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy (1993) (0)
Optical Study of Exciton Oscillator Strength in Semiconductor Quantum Wells (1994) (0)
Erratum: “The optical process in AlInP/GaInP/AlInP quantum wells” [J. Appl. Phys. 80, 4592 (1996)] (1997) (0)
Microdisk with embeded ge quantum dots as light emitting diode and photodetector (2013) (0)
The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells (1995) (0)
141103 Air stable high resolution organic transistors by selective laser sintering of ink-jet printed metal nanoparticles (3 pages) (2007) (0)
Resonant light emission from N-doped germanium-on-insulator microdisks at room-temperature (2014) (0)
28a-C-9 Non-local SdH oscillations of a two-dimensional enctron system(II) (1991) (0)
Quadratic Nonlinear Optical Coefficient of AlxGai-xAs Thin Film (1992) (0)
A 10X10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display (1982) (0)
Growth Criteria for Establishing Luminescence in Strained Si 1-* Ge * / Si Quantum (2008) (0)
Valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures observed by circularly polarized photoluminescence excitation spectroscopy (1994) (0)
First- and Second-Order Raman Spectroscopy of 70Genn/76Genn Isotope Superlattices (2001) (0)
Localization of Excitons in AlGaAs/GaAs Quantum Wells Observed in the Time Resolved Photoluminescence Spectroscopy (1993) (0)
Luminescence from quantum wells and superlattices composed of indirect bandgap semiconductors (1993) (0)
Dislocation filters utilizing anisotropic dislocation glide motion in modulus-modulated multilayer structures (1993) (0)
FabricationandopticalpropertiesofGaAs=AlGaAsquantumdot grownintetrahedral-shapedrecessesonGaAs(111)Bsubstrates byMOVPE (2000) (0)
Hole transport properties of B-doped relaxed Si/sub 0.7/Ge/sub 0.3/ epitaxial films grown by MBE (2002) (0)
Growth Criteria for Establishing Luminescence in Strained Si1-xGex/Si Quantum Wells (1993) (0)
Initial Oxidation of MBE-Grown Si Surfaces (1991) (0)
26aC-4 High mobility 2D electron cyclotron resonance in Si/SiGe single quantum well in high magnetic fields (1999) (0)
"Solid Source" Molecular Beam Epitaxial Growth of Highly Luminescent Si1-xGex/Si Quantum Well Structures (1992) (0)
SiGe based technologies : proceedings of Symposium on SiGe Based Technologies of the 1992 E-MRS Spring Conference, Strasbourg, France, June 2-4, 1992 (1993) (0)
Electron-electron and electron-phonon interactions in Si/SiGe and CdTe/CdMgTe quantum wells probed by high field cyclotron resonance (2003) (0)
Modified Luminescence from Germanium Self-assembled Quantum Dots in Photonic Crystal Cavity at Room Temperature (2006) (0)
Overgrowth and Characterization of Epitaxial Silicon on Patterned NiSi2 Grown by Molecular Beam Epitaxy (1984) (0)
Cyclotron Resonance of Two Dimensional Electrons near the Metal‐Insulator Transition (2011) (0)
Strong Direct Band-Edge Photoluminescence from Si/Si1-xGex/Si Quantum Well Grown by Molecular Beam Epitaxy with Post Annealing (1993) (0)
Ge dots in Optical Microcavities--A Possible Direction for Silicon-based Light Emitting Devices (2008) (0)
Ion-Implantation of Nitrogen into n-Type Cadmium Sulfide (1971) (0)
Single and coupled quantum wells: SiGe (2007) (0)
CMP for High Mobility Strained Si/Ge Channels (2009) (0)
Detection of Effect of Uniaxial Strain on the Valence Band of SiGe by HXPES with High Spatial Resolution (2013) (0)
Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism (2007) (0)
Preparation of SiO2 film by direct photo-CVD on strained SiGe layer (1994) (0)
Annealing of the BaSi 2 Epitaxial Films Implanted with BF 2 Ions (2011) (0)
Role of arsenic hexagonal growth-suppression on a cubic GaNAs growth using metalorganic chemical vapor deposition (1999) (0)
Growth and Characterization of 28 Sin/ 30 Sin Isotope Superlattices (2003) (0)
Verification of angular dependent magnetoresistance oscillations in layered materials with incoherent interlayer coupling (2001) (0)
Spin dependence of edge-channel transport in silicon-based quantum Hall systems (2006) (0)
D056 Investigation of strain, relaxation degree, interface roughness and porosity of SiGe/Si modfet heterostructures — invited (2006) (0)
Molecular beam epitaxy of SiGe heterostructures using a newly designed Si effusion cell (1998) (0)
lll-l 13 Optical Study of Exciton Oscillator Strength in Semiconductor Quantum Wells (2008) (0)
Formation of Luminescent Si1-xGex/Si Quantum Wells with Abrupt Interfaces by Segregant-Assisted Growth (1993) (0)

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What Schools Are Affiliated With Yasuhiro Shiraki?

Yasuhiro Shiraki is affiliated with the following schools:

University of Tokyo
Tokyo City University