Yoshio Nishi
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Applied Physics
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Engineering
Yoshio Nishi's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering Stanford University
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(Suggest an Edit or Addition)Yoshio Nishi's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Lithium ion secondary batteries; past 10 years and the future (2001) (685)
- Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method (2004) (475)
- Handbook of Semiconductor Manufacturing Technology (2007) (437)
- Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen. (2005) (406)
- The structure and mechanical properties of sheets prepared from bacterial cellulose (1989) (378)
- Olivine-type cathodes: Achievements and problems (2003) (357)
- The structure and mechanical properties of sheets prepared from bacterial cellulose (1990) (340)
- Achieving direct band gap in germanium through integration of Sn alloying and external strain (2013) (335)
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I (1971) (279)
- The development of lithium ion secondary batteries. (2001) (234)
- Kinetic Study of Hydrogen Evolution Reaction over Strained MoS2 with Sulfur Vacancies Using Scanning Electrochemical Microscopy. (2016) (212)
- Bipolar resistive switching in polycrystalline TiO2 films (2007) (202)
- Electronic correlation effects in reduced rutile TiO 2 within the LDA+U method (2010) (177)
- DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching. (2006) (171)
- Local Temperature Redistribution and Structural Transition During Joule‐Heating‐Driven Conductance Switching in VO2 (2013) (165)
- Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime (2005) (164)
- Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application (2009) (158)
- Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate. (2009) (156)
- HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides (2017) (150)
- Structural and Electrical Investigation of C60-Graphene Vertical Heterostructures. (2015) (135)
- Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs (2014) (128)
- High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments (2006) (124)
- Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations. (2014) (116)
- Impact of a Process Variation on Nanowire and Nanotube Device Performance (2007) (113)
- Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory (2011) (112)
- Strained germanium thin film membrane on silicon substrate for optoelectronics. (2011) (108)
- Physical origins of current and temperature controlled negative differential resistances in NbO2 (2017) (104)
- Model of metallic filament formation and rupture in NiO for unipolar switching (2010) (104)
- GeSn technology: Extending the Ge electronics roadmap (2011) (103)
- Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors (2009) (102)
- Nature of germanium nanowire heteroepitaxy on silicon substrates (2006) (101)
- Field-programmable rectification in rutile TiO2 crystals (2007) (99)
- Experimental investigation of a PtSi source and drain field emission transistor (1995) (96)
- ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels (2012) (96)
- Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors (2016) (94)
- Monolithic 3D Integrated Circuits (2007) (92)
- High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2. (2016) (90)
- High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations (2006) (90)
- Measurement of bandgap energies in low-k organosilicates (2014) (86)
- Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors. (2016) (84)
- Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser (2012) (81)
- Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs (2004) (81)
- Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack (2009) (76)
- First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides (2012) (75)
- Sequential Electronic and Structural Transitions in VO2 Observed Using X‐ray Absorption Spectromicroscopy (2014) (73)
- Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface (2010) (69)
- Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3 (2011) (68)
- Controlling electric dipoles in nanodielectrics and its applications for enabling air-stable n-channel organic transistors. (2011) (66)
- Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles. (2012) (66)
- Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/ (2005) (65)
- Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors (2015) (65)
- Ab initio study of metal gate electrode work function (2005) (64)
- Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET (2011) (64)
- Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode (2013) (64)
- Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment. (2007) (63)
- HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations (2016) (61)
- Oxygen migration during resistance switching and failure of hafnium oxide memristors (2017) (61)
- Advances in Non-volatile Memory and Storage Technology (2014) (60)
- Controlling uniformity of RRAM characteristics through the forming process (2012) (58)
- Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection (2008) (58)
- On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying (2015) (57)
- Contact Engineering High Performance n-Type MoTe2 Transistors. (2019) (57)
- Silicon-based photonic crystal nanocavity light emitters (2006) (55)
- High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric (2007) (55)
- Lithium-ion rechargeable cells with LiCoO2 and carbon electrodes (1993) (54)
- Free Carrier Absorption in p-Type Silicon (1966) (53)
- Redistribution of Diffused Boron in Silicon by Thermal Oxidation (1964) (53)
- HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition (2008) (53)
- Grain boundary composition and conduction in HfO2: An ab initio study (2013) (53)
- High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts (2008) (51)
- Electron Spin Resonance in SiO2 Grown on Silicon (1966) (50)
- Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices (2007) (49)
- Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors (2017) (48)
- Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen (2013) (48)
- Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As (2008) (48)
- An Analytical Derivation of the Density of States, Effective Mass, and Carrier Density for Achiral Carbon Nanotubes (2008) (47)
- Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories (2013) (46)
- Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations (2015) (46)
- Epitaxially grown strained pentacene thin film on graphene membrane. (2015) (45)
- Direct band Ge photoluminescence near 1.6 μm coupled to Ge-on-Si microdisk resonators (2010) (43)
- Ultra-thin and high-response transparent and flexible heater based on carbon nanotube film (2017) (43)
- Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain Ge NMOSFET (2008) (43)
- An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory (2007) (43)
- Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory (2013) (43)
- Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories (2013) (43)
- Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET (1980) (43)
- A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory (2014) (42)
- Design and optimization methodology for 3D RRAM arrays (2013) (42)
- Ferroelectric Switching Pathways and Energetics in (Hf,Zr)O2 (2017) (41)
- High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3 (2010) (41)
- Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability (2009) (41)
- InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design (2011) (41)
- High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode (2011) (41)
- R&D Organization in Japanese and American Semiconductor Firms (1994) (41)
- Development of high-k dielectric for antimonides and a sub 350°C III–V pMOSFET outperforming Germanium (2010) (40)
- Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT) (2005) (39)
- Germanium In Situ Doped Epitaxial Growth on Si for High-Performance $\hbox{n}^{+}/\hbox{p}$-Junction Diode (2009) (38)
- Arsenic-Dominated Chemistry in the Acid Cleaning of InGaAs and InAlAs Surfaces (2008) (38)
- An Analytical Compact Circuit Model for Nanowire FET (2007) (38)
- Solution-processed flexible organic transistors showing very-low subthreshold slope with a bilayer polymeric dielectric on plastic (2009) (36)
- Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method (2012) (35)
- The effects of vacuum ultraviolet radiation on low-k dielectric films (2012) (35)
- Optimization of the Al 2 O 3 / GaSb Interface and a High-Mobility GaSb pMOSFET (2011) (35)
- Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires (2006) (33)
- Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM (2016) (33)
- Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb (2011) (33)
- Charge Trapping in High-$k$Gate Stacks Due to the Bilayer Structure Itself (2006) (33)
- Plasma damage effects on low-k porous organosilicate glass (2010) (33)
- Power Optimization for SRAM and Its Scaling (2007) (32)
- Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass (2012) (32)
- Microscopic understanding of the low resistance state retention in HfO2 and HfAlO based RRAM (2014) (31)
- Three-Dimensional Analysis of Particle Distribution on Filter Layers inside N95 Respirators by Deep Learning (2020) (31)
- Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon (2011) (31)
- Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors Based on an Asymmetric Small-Molecule Semiconductor (2009) (30)
- Challenges and opportunities for future non-volatile memory technology (2011) (30)
- Charge Trapping within UV and Vacuum UV Irradiated Low-k Porous Organosilicate Dielectrics (2010) (30)
- Uniaxial Stress Engineering for High-Performance Ge NMOSFETs (2010) (29)
- The effect of water uptake on the mechanical properties of low-k organosilicate glass (2013) (29)
- Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching (2013) (29)
- Hot Forming to Improve Memory Window and Uniformity of Low-Power HfOx-Based RRAMs (2012) (29)
- Plasmonic enhancement of emission from Si-nanocrystals (2008) (28)
- In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors (2015) (28)
- Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si (2010) (28)
- High endurance performance of 1T1R HfOx based RRAM at low (<20μA) operative current and elevated (150°C) temperature (2011) (28)
- GeSn channel nMOSFETs: Material potential and technological outlook (2012) (28)
- Deep recombination centers in C u 2 ZnSnS e 4 revealed by screened-exchange hybrid density functional theory (2015) (27)
- Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN (2012) (27)
- Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer (2012) (27)
- The development of lithium ion secondary batteries (1996) (26)
- High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing (2010) (26)
- An ultraclean tip-wear reduction scheme for ultrahigh density scanning probe-based data storage. (2010) (25)
- High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs (2007) (25)
- Physics in designing desirable ReRAM stack structure — Atomistic recipes based on oxygen chemical potential control and charge injection/removal (2012) (25)
- Defect-induced bandgap narrowing in low-k dielectrics (2015) (25)
- Engineering the metal gate electrode for controlling the threshold voltage of organic transistors (2012) (24)
- Effects of ZrO2 doping on HfO2 resistive switching memory characteristics (2014) (24)
- Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory—Experimental Demonstration and Analysis (2008) (23)
- Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration (2014) (23)
- Electronic structure and stability of low symmetry Ta2O5polymorphs (2014) (23)
- Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism (2018) (23)
- Effects of strain and interface on work function of a Nb-W metal gate system (2007) (23)
- Dopant selection rules for extrinsic tunability of HfOx RRAM characteristics: A systematic study (2013) (23)
- Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors. (2017) (22)
- Engineering of ferroelectric switching speed in Si doped HfO2 for high-speed 1T-FERAM application (2017) (22)
- Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer (2010) (22)
- Bilayer metal gate electrodes with tunable work function: Mechanism and proposed model (2010) (22)
- The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices (2009) (21)
- Low-Contact-Resistivity Nickel Germanide Contacts on n+Ge with Phosphorus/Antimony Co-Doping and Schottky Barrier Height Lowering (2012) (21)
- p-Channel field-effect transistors based on C60 doped with molybdenum trioxide. (2013) (20)
- Photonic Crystal and Plasmonic Silicon-Based Light Sources (2010) (20)
- Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n + / p-Junction Diode (2009) (20)
- A semiclassical model of dielectric relaxation in glasses (2006) (20)
- Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics (2010) (20)
- Development and characterization of high temperature stable Ta–W–Si–C amorphous metal gates (2010) (20)
- Fir laser emissions from population inversion transition by TEA-CO2 laser pumping (1990) (19)
- Hydrogen doping in HfO2 resistance change random access memory (2016) (19)
- Limits of integrated-circuit manufacturing (2001) (19)
- Effect of thermal insulation on the electrical characteristics of NbOx threshold switches (2018) (19)
- Concept of polymer alloy electrolytes: towards room temperature operation of lithium–polymer batteries (2004) (19)
- Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation (2010) (19)
- Recent Progress in Resistance Change Memory (2008) (19)
- Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass (2014) (19)
- Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling (2013) (18)
- Germanium Surface Cleaning with Hydrochloric Acid (2006) (18)
- Invited) GeSn Channel n and p MOSFETs (2013) (18)
- Fully inverted single-digit nanometer domains in ferroelectric films (2010) (18)
- Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si (2007) (18)
- First principles modeling of charged oxygen vacancy filaments in reduced TiO2-implications to the operation of non-volatile memory devices (2013) (18)
- Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals (2010) (17)
- Past, Present and Future of Lithium-Ion Batteries (2014) (17)
- Investigation of the performance limits of III-V double-gate n-MOSFETs (2005) (17)
- Effects of vacuum ultraviolet radiation on deposited and ultraviolet-cured low-k porous organosilicate glass (2011) (17)
- The Dawn of Lithium-Ion Batteries (2016) (17)
- Cross plane thermal conductance of graphene-metal interfaces (2014) (17)
- 3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines (2015) (17)
- Performance of the First Lithium Ion Battery and Its Process Technology (2007) (17)
- H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells (2015) (17)
- Role of Hydrogen Ions in TiO2-Based Memory Devices (2011) (16)
- High quality GeO2/Ge interface formed by SPA radical oxidation and uniaxial stress engineering for high performance Ge NMOSFETs (2006) (16)
- A 1024-bit MNOS RAM using avalanche-tunnel injection (1975) (16)
- Characterization of electronic structure of periodically strained graphene (2015) (16)
- Passivation Studies of Germanium Surfaces (2007) (16)
- Modeling resistive switching materials and devices across scales (2017) (16)
- Effect of vacuum ultraviolet and ultraviolet irradiation on mobile charges in the bandgap of low-k-porous organosilicate dielectrics (2011) (16)
- Novel Germanium n-MOSFETs With Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration (2011) (15)
- Defects in low-k organosilicate glass and their response to processing as measured with electron-spin resonance (2011) (15)
- On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs (2011) (15)
- Ab initio study of Al-Ni bilayers on SiO2 : Implications to effective work function modulation in gate stacks (2009) (15)
- Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers (1968) (15)
- Asymmetry, Vacancy Engineering and Mechanism for Bipolar RRAM (2012) (15)
- Surface charge sensing by altering the phase transition in VO2 (2014) (15)
- Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS) (2016) (14)
- Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs (2006) (14)
- Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics (2010) (14)
- HfO 2 /Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study (2018) (14)
- Tuning the built-in electric field in ferroelectric Pb(Zr(0.2)Ti(0.8))O3 films for long-term stability of single-digit nanometer inverted domains. (2012) (14)
- Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si (2009) (13)
- An atomic force microscope study of surface roughness of thin silicon films deposited on SiO/sub 2/ (2005) (13)
- Theoretical study of the resistance switching mechanism in rutile TiO2−x for ReRAM: The role of oxygen vacancies and hydrogen impurities (2011) (13)
- The effects of uniaxial and biaxial strain on the electronic structure of germanium (2016) (13)
- Composite materials reinforced with polyoxymethylene whiskers (1982) (13)
- Lithium Ion Secondary Batteries (1998) (13)
- Identifying Ferroelectric Switching Pathways in HfO2: First Principles Calculations under Electric Fields (2017) (13)
- Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer (2013) (13)
- Image Charge and Dipole Combination Model for the Schottky Barrier Tuning at the Dopant Segregated Metal/Semiconductor Interface (2009) (13)
- Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays (2014) (13)
- The nature of the defects generated from plasma exposure in pristine and ultraviolet-cured low-k organosilicate glass (2011) (12)
- Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2/Si interface (2009) (12)
- Band to Band Tunneling limited Off state Current in Ultra-thin Body Double Gate FETs with High Mobility Materials : III-V, Ge and strained Si/Ge (2006) (12)
- Carbon Nanotube Quantum Capacitance for Nonlinear Terahertz Circuits (2009) (12)
- (Invited) Physics and Device Technology of Silicon on Sapphire (1977) (12)
- The development of lithium-ion secondary battery systems for EV and HEV (1998) (12)
- Numerical simulation of vacuum-ultraviolet irradiation of dielectric layers (2010) (12)
- Properties of Dopants in HfO x for Improving the Performance of Nonvolatile Memory (2017) (12)
- Performance Prediction of Large-Scale 1S1R Resistive Memory Array Using Machine Learning (2015) (12)
- Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on "100…Si as measured with electron-spin resonance (2010) (11)
- Surface Science of Catalyst Dynamics for Aligned Carbon Nanotube Synthesis on a Full-Scale Quartz Wafer (2009) (11)
- Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation (2014) (11)
- Copper interstitial recombination centers in Cu3N (2018) (11)
- The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics (2010) (11)
- Synthesis of TiO2 nanoframe and the prototype of a nanoframe solar cell (2010) (11)
- First-principles study of carbon impurity effects in the pseudo-hexagonal Ta 2 O 5 (2016) (11)
- Improved multi-level control of RRAM using pulse-train programming (2014) (11)
- New Laser Emission from NH3 Optically-Pumped by TE–CO2 Laser (1982) (11)
- GeSn Channel n and p MOSFETs (2012) (11)
- Copper sulfide-based resistance change memory (2007) (11)
- Bilayer metal gate electrodes with tunable work function: Adhesion and interface characterization (2010) (11)
- Research on switching property of an oxide/copper sulfide hybrid memory (2008) (10)
- Impact of electrode nature on the filament formation and variability in HfO2 RRAM (2014) (10)
- Polaronic interactions between oxygen vacancies in rutile Ti O 2 (2017) (10)
- Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2/(100)Si interfaces (2008) (10)
- Analysis of the potential distribution in the channel region of a platinum silicided source/drain metal oxide semiconductor field effect transistor (1999) (10)
- First-principles study of resistance switching in rutile TiO2 with oxygen vacancy (2008) (10)
- Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films (2006) (10)
- Changes to Charge and Defects in Dielectrics from Ion and Photon Fluences during Plasma Exposure (2011) (10)
- HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study (2018) (9)
- Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer (2005) (9)
- Ab-Initio Modeling of the Resistance Switching Mechanism in RRAM Devices: Case Study of Hafnium Oxide (HfO 2 ) (2012) (9)
- Study of Germanium Surface in Wet Chemical Solutions for Surface Cleaning Applications (2006) (9)
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II (1972) (9)
- Many FIR Laser Emissions Pumped by a TEA-C02 Laser with Etalon Tuning (1987) (9)
- Comparison of new technologies for VLSI: possibilities and limitations (1981) (9)
- Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress (2015) (9)
- Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation (2010) (8)
- Analytical Model of Carbon Nanotube Electrostatics: Density of States, Effective Mass, Carrier Density, and Quantum Capacitance (2007) (8)
- Halide Passivation of Germanium Nanowires (2006) (8)
- Dielectric relaxation study of hydrogen exposure as a source of two-level systems in Al2O3 (2011) (8)
- Effect of water uptake on the fracture behavior of low-k organosilicate glass (2014) (8)
- Superior filament formation control in HfO2 based RRAM for high-performance low-power operation of 1 µA to 20 µA at +/− 1V (2012) (8)
- Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface (2008) (8)
- Amorphous thin film TaWSiC as a diffusion barrier for copper interconnects (2013) (8)
- Role of nitrogen incorporation into Al2O3-based resistive random-access memory (2014) (8)
- High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration (2009) (8)
- Materials and Technologies for III-V MOSFETs (2010) (8)
- Lithium ion secondary battery technologies, present and future (2000) (8)
- Lithium-Ion Secondary Batteries with Gelled Polymer Electrolytes (2005) (7)
- Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device Operation (2017) (7)
- Film Properties of MoSi/sub 2/ and Their Application to Self-Aligned MoSi/sub 2/ Gate MOSFET (1980) (7)
- Production, Property, and Application of Bacterial Cellulose. (1998) (7)
- Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure (1982) (7)
- The dependence of hot carrier degradation on AC stress waveforms (1988) (7)
- Lithium ion rechargeable batteries (1993) (7)
- Effect of the dielectric–substrate interface on charge accumulation from vacuum ultraviolet irradiation of low-k porous organosilicate dielectrics (2011) (7)
- Fermi level depinning at metal-organic semiconductor interface for low-resistance Ohmic contacts (2009) (7)
- Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics (2014) (7)
- Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology. (2010) (7)
- Development of High-k Dielectric for Antimonides and a sub 350 degree Celsius III-V pMOSFET Outperforming Germanium (2010) (7)
- Hard HfB2 tip-coatings for ultrahigh density probe-based storage (2012) (7)
- Carbonaceous Materials for Lithium Ion Secondary Battery Anodes (2000) (7)
- Microscopic model for the kinetics of the reset process in HfO2 RRAM (2013) (7)
- (Invited) Understanding the Switching Mechanism in RRAM Devices and the Dielectric Breakdown of Ultrathin High-k Gate Stacks from First Principles Calculations (2011) (6)
- Challenge of nanoelectronic materials and devices toward new nonvolatile memories (2008) (6)
- Atomically-thin HfSe2 transistors with native metal oxides (2016) (6)
- Anomalous drain current in n-MOSFET's and its suppression by deep ion implantation (1978) (6)
- Intrinsic limits of leakage current in self-heating-triggered threshold switches (2019) (6)
- Strained-Si, Relaxed-Ge or Strained-(Si)Ge for Future Nanoscale p-MOSFETs? (2006) (6)
- Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x (2018) (6)
- Invited) The Interplay between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices (2014) (6)
- Damage Identification of CFRP Laminated Cantilever Beam by Using Neural Network (1997) (6)
- Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes (2014) (6)
- Germanium on Insulator (GOI) Structure Using Hetero-Epitaxial Lateral Overgrowth on Silicon (2012) (6)
- On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations (2013) (5)
- Fluorophore-based sensor for oxygen radicals in processing plasmas (2015) (5)
- New Far Infrared Laser Emissions from D2CO and H2CO Optically-Pumped by a TECO2 Laser (1984) (5)
- The effects of vacuum-ultraviolet radiation on defects in low-k organosilicate glass (SiCOH) as measured with electron-spin resonance (2016) (5)
- Doping technology for RRAM — Opportunities and challenges (2016) (5)
- Suppression of Anomalous Drain Current in Short Channel MOSFET (1978) (5)
- Possibility of hydrogen generation using supercritical water (2003) (5)
- Two dimensional nature of diffused line capacitance in coplanar MOS structures (1980) (5)
- Effects of ultraviolet (UV) irradiation in air and under vacuum on low-k dielectrics (2016) (5)
- The Nature and Mechanism of Degradation in MNOS Read write Memory (1974) (5)
- Lateral Nanoconcentrator Nanowire Multijunction Photovoltaic Cells (2009) (5)
- Silicon on Sapphire technology (1976) (5)
- Plasma and vacuum ultraviolet induced charging of SiO2 and HfO2 patterned structures (2012) (5)
- High-field drift velocity of electrons in p-type silicon☆ (1970) (4)
- Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs (2010) (4)
- (Invited) Characterizations of Direct Band Gap Photoluminescence and Electroluminescence from epi-Ge on Si (2010) (4)
- Ultrafast Accelerated Retention Test Methodology for RRAM Using Micro Thermal Stage (2017) (4)
- Impact of pulse rise time on programming of cross-point RRAM arrays (2014) (4)
- Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum-ultraviolet radiation (2016) (4)
- The shortest wavelength far-infrared laser line from CW CO2 laser pumped CH3OH and M-independent Stark splitting of laser lines (1983) (4)
- Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy (2015) (4)
- Assignments of fir laser emissions from CH3OH optically pumped by an intra-cavity etalon tuned TEA-CO2 laser (1987) (4)
- First-principles study of A-site substitution in ferroelectric bismuth titanate (2014) (4)
- Effects of neutron irradiation of ultra-thin HfO2 films (2014) (4)
- Measurement of the vacuum-ultraviolet absorption spectrum of low-k dielectrics using X-ray reflectivity (2018) (4)
- Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics (2015) (4)
- Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation (2011) (4)
- Revolutionary Nanoelectronic Devices and Processes for Post 32nm CMOS Era (2009) (4)
- Effect of Composition on Structural and Electrical Properties of Amorphous Ta-W-Si-C Metal Thin Films (2013) (4)
- Power optimization of future transistors and a resulting global comparison standard (2004) (4)
- P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths (1980) (4)
- An Intra. cavity-Etalon-Tuned TE-CO2 Laser and its Application to FIR Lasers (1984) (4)
- A deep level in Zn-doped liquid phase epitaxial GaAs (1971) (4)
- Quasi-passive and reconfigurable node for optical access network (2010) (3)
- Performance and analytical modeling of Metal–Insulator-Metal Field Controlled Tunnel Transistors (2010) (3)
- Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters (2021) (3)
- Epitaxial Deposition of Silicon by Pyrolysis of SiH4 (1967) (3)
- Invited) Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories (2013) (3)
- Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor (1966) (3)
- High-Performance Air-Stable Solution Processed Organic Transistors (2008) (3)
- Avalanche-tunnel injection in MNOS transistor (1977) (3)
- Structural and electrical characterization of CoTiN metal gates (2015) (3)
- Low Dit optimized Interfacial Layer using High-Density Plasma Oxidation and Nitridation in Germanium High-κ Gate stack (2008) (3)
- Erratum: Prediction of Semimetallic Tetragonal Hf 2 O 3 and Zr 2 O 3 from First Principles [Phys. Rev. Lett. 110, 065502 (2013)] (2015) (3)
- Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress (2008) (3)
- Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics (2016) (3)
- Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices (2012) (3)
- First-principles investigation of the conductive filament configuration in rutile TiO 2-x ReRAM (2012) (3)
- Design and materials selection for low power laterally actuating nanoelectromechanical relays (2012) (3)
- HfO 2 gate dielectric on ( NH 4 ) 2 S passivated ( 100 ) GaAs grown by atomic layer deposition (2007) (3)
- High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage (2006) (3)
- Direct observation of the differences between Raman scatering and population inversion transition for their emission frequencies and pulse waveforms (1987) (3)
- Improving the High Resistance State Retention Degradation of Al-Doped HfOx Based on Ab Initio Simulations (2017) (3)
- New constraint for Vth optimization for sub 32nm node CMOS gates scaling (2005) (3)
- A novel Bi-stable 1-transistor SRAM for high density embedded applications (2015) (3)
- A 256 bit Nonvolatile Static Random Access Memory with MNOS Memory Transistors (1975) (3)
- Two-dimensional porous silicon photonic crystal light emitters (2005) (3)
- First principles guiding principles for the switching process in oxide ReRAM (2012) (3)
- Analysis of Fatigue Behavior of High-density Polyethylene Based on Dynamic Viscoelastic and Small Angle Light Scattering Measurements during the Fatigue Process (1991) (2)
- Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM) (2013) (2)
- Memristors: Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors (Adv. Mater. 14/2016) (2016) (2)
- Electro-Thermally Coupled Power Optimization for Future Transistors and Its Applications (2007) (2)
- Publisher's Note: “Defect-induced bandgap narrowing in low-k dielectrics” [Appl. Phys. Lett. 107, 082903 (2015)] (2015) (2)
- Transmission of oxygen radicals through free-standing single-layer and multilayer silicon-nitride and silicon-dioxide films (2017) (2)
- Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures (2014) (2)
- The effects of plasma exposure on low-k dielectric materials (2012) (2)
- Tunable te-CO2 laser-pumped formaldehyde far-infrared lasers: Offsets, assignment, and superfluorescence (1985) (2)
- Preparation of High-Strength Materials from Bacterial Cellulose (1991) (2)
- Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO 2 and oxygen-deficient silicon centers within the SiO 2 / Si interface (2009) (2)
- Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation (2017) (2)
- Electric field dependent switching and degradation of Resistance Random Access Memory (2009) (2)
- Amorphorized tantalum-nickel binary films for metal gate applications (2015) (2)
- Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application (2014) (2)
- Ultra shallow junctions with high dopant activation and GeO2 interfacial layer for gate dielectric in germanium MOSFETs (2010) (2)
- Impact of hydrogen on the electroforming of Pr0.7Ca0.3MnO3 resistance-change memory devices (2009) (2)
- Effect of Residual Stress on Hole Mobility of SOS MOS Devices (1978) (2)
- Review on simulation of filamentary switching in binary metal oxide based RRAM devices (2014) (2)
- Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs (2006) (2)
- Electronic structures of Nb–W bulk and surface from first principles calculation (2008) (2)
- Lattice and electronic effects in rutile TiO 2 containing charged oxygen defects from ab initio calculations (2009) (2)
- Silicon faces the future (1995) (2)
- The electronic structure of an S-pair in barrier-less metal/silicon junctions (2013) (2)
- Charging response of back-end-of-the-line barrier dielectrics to VUV radiation (2012) (2)
- Doping Trends in HfOx RRAM (2017) (2)
- Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties (2018) (2)
- A novel mode of write operation utilizing avalanche-tunnel injection in MNOS memory transistor (1972) (2)
- 1 K-bit nonvolatile semiconductor read/write RAM (1978) (2)
- Semiconductor Interfaces and Their Implications to VLSI Device Reliability (1994) (2)
- Process Integration and Electrical Properties of Bilayer Metal Gate/High-k MOSFETs (2007) (1)
- A Bi-stable 1- /2-Transistor SRAM in 14 nm FinFET Technology for High Density / High Performance Embedded Applications (2018) (1)
- Kinetics of Frenkel Defect Formation in TiO2 from First Principles (2013) (1)
- Geoelectric Monitoring Studies for the Carbon Dioxide Geological Storage (2008) (1)
- Carbonaceous Materials as an Anode of Secondary Batteries. (1995) (1)
- Formation of epitaxial Hf germanide/Ge contacts for Schottky barrier height engineering (2017) (1)
- Developing the electronics industry : a World Bank symposium (1993) (1)
- IC technology R&D for the next century (1999) (1)
- A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport (2007) (1)
- Invited) Mechanism Study of Reversible Resistivity Change in Oxide Thin Film (2015) (1)
- The present and the future of nanoelectronics (2004) (1)
- Increased photoluminescence from single-mode microwave annealing of N-type Ge-on-Si (2016) (1)
- A semiconductor nanobridge biosensor for electrical detection of DNA hybridization (2008) (1)
- Invited) Dielectric Damage (2014) (1)
- A double-diffused MNOS transistor as a new non-volatile memory (1973) (1)
- Thermal limitations of two-dimensional semi-metallic WTe2 devices (2016) (1)
- Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks (2020) (1)
- Measuring the volume charge in dielectric films using single frequency electro-acoustic waves (2014) (1)
- Optimization of Light Emission from Silicon Nanocrystals Grown by PECVD (2010) (1)
- ULSI technology toward the next century: driven by DRAMs or MPUs? (1992) (1)
- The Simulation of a Gunn Diode with Temperature Effects (1972) (1)
- Effect of IrO2 Spatial Distribution on the Stability and Charge Distribution of Ti1–xIrxO2 Alloys (2019) (1)
- Resistive Switching in Transition Metal Oxide ReRAM Devices (2012) (1)
- Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold (2019) (1)
- (Invited) Investigation of Frenkel-Pair Formation in HfO 2 and Its Influence on OxRAM Memory Reliability (2014) (1)
- WTe2 as a two-dimensional (2D) metallic contact for 2D semiconductors (2016) (1)
- An internally amplified signal SOI nano-bridge biosensor for electrical detection of DNA hybridization (2009) (1)
- Technology and modeling for MOS IC/VLSI'S - state of the art - (1985) (1)
- Germanium on insulator (GOI) structure locally grown on silicon using hetero epitaxial lateral overgrowth (2013) (1)
- Ab initio modeling of resistive switching mechanism in binary metal oxides (2014) (1)
- Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation (2013) (1)
- Invited: Nonvolatile Semiconductor Memory (1977) (1)
- Design and Optimization Methodology for 3 D RRAM Arrays (2013) (1)
- Changes in Geophysical Observables Caused by Carbon Dioxide Injection Into Saline Aquifers (2008) (1)
- Repeated Resistivity and GPR Surveys for the Monitoring of Water Content and Temperature in the Unsaturated Zone (2007) (1)
- \emph{Ab initio} Calculations for Hydrogen-Doped HfO$_{2-x}$ RRAM (2014) (0)
- MOSFETs and TFETs (2010) (0)
- Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers (1970) (0)
- Physics of ON-OFF Switching Mechanism of ReRAM via Oxygen Vacancy Based Conducting Channels (2013) (0)
- Cmos scaling and nanoelectronics new materials and processes (2005) (0)
- Integration Challenges and Opportunities of Nanoelectronic Devices (2009) (0)
- Field-induced rectification in rutile single crystals. (2007) (0)
- Modeling the Resistive Switching Process in Transition Metal Oxide Based Non-Volatile Memory Devices (2013) (0)
- First-Principles Investigations of the Metal Doping Effects in TiO2 ReRAM (2012) (0)
- Physical origins of current and temperature controlled negative differential resistances in NbO2 (2017) (0)
- Plasmonic metal-insulator-metal structures for interaction with silicon nanocrystals (2009) (0)
- Analysis of fatigue behavior of high‐density polyethylene based on dynamic viscoelastic and small angle light scattering measurements during the fatigue process (abstract) (1992) (0)
- Session 16 Device technology — Insulator technology (1981) (0)
- Oxygen vacancy mediated dielectric breakdown in ultrathin high-k gate dielectric stacks (2011) (0)
- Standards Commonly Used in Semiconductor Manufacturing (2007) (0)
- United States Patent ( 19 ) Iguchi et al . ( 54 ) BACTERIAL CELLULOSE-CONTAINING MOLDING (2017) (0)
- Highly-strained Germanium as a gain medium for silicon-compatible lasers (2012) (0)
- Carbon material and a nonaqueous, this material used electrochemical cell. (1990) (0)
- Pulse-train measurement techniques: An RRAM test vehicle for in-depth physical understanding (2014) (0)
- A New Non-Volatile Read Write Random Access Memory Operation by Means of Avalanche-Tunnel Injection in MNOS Transistor (1972) (0)
- A CMOS-compatible boosted transistor having >2× drive current and low leakage current (2016) (0)
- Secondary battery organic electrolyte. (1989) (0)
- CMOS Scaling Limit and Nanoelectronics: New materials and processes beyond silicon (2006) (0)
- Physical Guiding Principles for High Quality ReRAM Stack with Al2O3 O Vacancy Barrier Layer (2012) (0)
- Technology roadmap and beyond (2003) (0)
- Physical origins of ON-OFF switching in ReRAM via VO based conducting channels (2013) (0)
- The effects of VUV radiation on low-k organosilicate glass (SiCOH) as measured with electron-spin resonance (2015) (0)
- Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates (2005) (0)
- Direct band Ge photoluminescence at 1.6 μm coupled to Ge-on-Si microdisk resonators (2011) (0)
- Separation of ion and photon damage effects on novel dielectric materials during plasma exposure (2011) (0)
- Nanoelectronic materials and devices as new opportunity (2006) (0)
- Quantum Capacitance Spectroscopy of Single Nanotube Molecules (2007) (0)
- CMOS Scaling andon-Silicon Opportunities (2006) (0)
- A 256bit Nonvolatile Static Random Access Memory with MNOS Memory Transistors : A-5: FIELD EFFECT TRANSISTORS (II) (1976) (0)
- Plasmonic gratings for interaction with quantum emitters (2008) (0)
- Edge-defined 90nm TFTs with adjustable V/sub T/ in a 3-D compatible process (2005) (0)
- Characterizations of Direct Band Gap PL and EL from epi-Ge on Si (2010) (0)
- Estimation of Bending Strength of CFRP Cross-Ply Laminates from Damping Capacity Using by Neural Network (1997) (0)
- Theoretical investigation and analytical modelling of Metal Insulator Metal gate controlled tunnelling Transistor (2008) (0)
- Effects of plasma exposure on defects in novel dielectric materials (2011) (0)
- Ge on Insulator (GOI) Structure Using Ge Lateral Overgrowth (2012) (0)
- Analytical ModelofCarbonNanotube Electrostatics: Density ofStates, Effective Mass, Carrier Density, andQuantumCapacitance (2007) (0)
- Photoluminescence decay dynamics of silicon-rich silicon nitride film in photonic crystal nanocavity (2007) (0)
- Technology Trends And Opportunities For Giga-scale Integration (1997) (0)
- Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO 2 on InGaAs and InAlAs (2008) (0)
- First-principles modeling of the electron and ion transport in TiO$_{2}$ ReRAM (2013) (0)
- Carbon Nanotube Transistors with 60mV/decade Switching and its Capacitance Measurement (2007) (0)
- Effects of Ultraviolet Exposure on the current-voltage characteristics of high-k dielectric layers (2010) (0)
- Impact of scaling and the scaling development environment (2007) (0)
- NH4)2Sでパッシベートした(100)GaAs上に原子層堆積で成長させたHfO2ゲート絶縁体 (2008) (0)
- BandtoBandTunneling limited Offstate Current inUltra-thin BodyDoubleGate FETswithHighMobility Materials :III-V, Geandstrained Si/Ge (2006) (0)
- Based molding composition of bacterially produced cellulose. (1986) (0)
- Experimental verification of physical models for defect states in crystalline and amorphous ultrathin dielectric films (2011) (0)
- Quantum Capacitance Measurement for SWNT FET with Thin ALD High-k Dielectric (2007) (0)
- Bandgap narrowing in low-k dielectrics (2015) (0)
- Source/Drain Technology for Nanoscale MIS Field Effect Devices (2007) (0)
- Scattering of Surface States at Steps Investigated with Curved Crystals (2010) (0)
- On the Distribution of Impurities in Epitaxial Silicon Films (1964) (0)
- Computational study toward micro electronics engineering (2012) (0)
- Session 9 Device technology — MOS device isolation (1982) (0)
- Study of the inversion layer mobility and the improvement in g m of MOS-FET (1968) (0)
- Electro-Thermally Coupled Power Optimization for Future Transistors (2007) (0)
- Monolithic 3DIntegrated Circuits (2007) (0)
- First-Principles Study of Oxygen Vacancy and Hydrogen Impurity Effects in the Pseudo-Hexagonal Ta2O5 (2013) (0)
- Two color oscillations of TE-CO2 laser and applications to two photon process of optically pumped FIR laser (1988) (0)
- Formation of Donor Center in Silicon by Hot Proton Irradiation (1971) (0)
- CMOS state of the arts and future potential (2006) (0)
- Ultra high performance insulator channel transistor (2008) (0)
- Cutting or stamping process of polyethylene with a high modulus of elasticity. (1988) (0)
- Capacitance Measurement for FETs of Individual SWNTs with Altra-Thin ALD High-k Dielectric (2007) (0)
- Protonic motion in Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ thin films and its implications on resistance change properties (2011) (0)
- Reactivity Improvement of Magnesium with Hydrogen by Carbon Nano-Material Mixing (2010) (0)
- Investigation of the impact of hydrogen on the forming behavior of Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ RF-sputtered thin films exhibiting Electric Pulse Induced Resistance change (2010) (0)
- Ab initio Study of Metal Interfaces with HfO$_{2}$ and SiO$_{2}$: Work Function Modulation (2007) (0)
- Ab initio Calculations for Hydrogen-Doped HfO2 -x RRAM (2014) (0)
- Characterization of Nanostructured Materials” (2010) (0)
- Study of the inversion layer mobility and the improvement in g m of MOSFET (1969) (0)
- First-Principles Investigations of the Metal Doping Effects in TiO 2 ReRAM (2012) (0)
- Incorporation of supply voltage and process variations in the power optimization for future transistors (2005) (0)
- New universal physical model for the recoverable part of NBTI degradation (2009) (0)
- Redistribution of Diffused Boron in Silicon by Thermal Oxidation (1964) (0)
- Demonstration of Electroluminescence from Strained Ge Membrane LED (2012) (0)
- SURFACE PASSIVATION AND JUNCTION ENGINEERING IN SILICON / GERMANIUM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT- TRANSISTORS FOR HIGH PERFORMANCE APPLICATION A DISSERTATION SUBMITTED TO THE DEPARTMENT OF ELECTRICAL ENGINEERING AND THE COMMITTEE ON GRADUATE STUDIES OF STANFORD UNIVERSITY IN PARTIAL FULFIL (2011) (0)
- A stability improvement of current gain in silicon planar transistors (1969) (0)
- The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics (2016) (0)
- Ab initio modeling of interfacial oxygen defects in ultrathin high-k gate dielectric stacks (2009) (0)
- Material for the anode and process for their preparation (1993) (0)
- Quasi passive optical switch based on transition metal oxide device (2011) (0)
- CMOS scaling and non-silicon opportunities (2006) (0)
- Thin electronic card with IC chip and battery and process for their preparation. (1989) (0)
- Silicon Nanocavity Based Light Sources (2011) (0)
- Very High Performance, Ultrathin, Strained-Ge Channel, Heterostructure FETs with High Mobility and Low BTBT Leakage (2006) (0)
- Understanding of switching phenomena in unipolar NiO-based RRAM (2010) (0)
- Enhanced Impurity Redistribution for Silicided Source/Drain (1984) (0)
- Impact ofhydrogen on the electrofonning of Pro.7Cao.3Mn03 resistance-change memory devices (2009) (0)
- Graphene Template for Epitaxial Growth of Pentacene and C$_{60}$ Thin Film (2015) (0)
- Silicon-Based IC Technology for Giga-Scale Integration Era (1997) (0)
- A method of measuring the layer thickness of which is designed for a high resistivity layer of a Halbleiterplaettchens (1968) (0)
- High Performance, Strained-Ge, Heterostructure p-MOSFETs (2007) (0)
- A method and apparatus for purifying hydrogen sulphide gas (1974) (0)
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What Schools Are Affiliated With Yoshio Nishi?
Yoshio Nishi is affiliated with the following schools: