Isamu Akasaki
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Japanese engineer
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Physics
Isamu Akasaki's Degrees
- Bachelors Engineering Kyoto University
- Masters Engineering Nagoya University
- Doctorate Engineering Nagoya University
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Why Is Isamu Akasaki Influential?
(Suggest an Edit or Addition)According to Wikipedia, was a Japanese engineer and physicist, specializing in the field of semiconductor technology and Nobel Prize laureate, best known for inventing the bright gallium nitride p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.
Isamu Akasaki's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer (1986) (1840)
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) (1989) (1609)
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) (624)
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE (1989) (591)
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters (1997) (587)
- Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect (1998) (550)
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells (2000) (462)
- Shortest wavelength semiconductor laser diode (1996) (433)
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE (1991) (269)
- Nobel Prize for Physics (1937) (264)
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer (1993) (236)
- Pit formation in GaInN quantum wells (1998) (233)
- P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY (1994) (231)
- Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes (2010) (221)
- Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate (1988) (217)
- Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer (1992) (203)
- Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED (1991) (201)
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy (1993) (192)
- Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode (2006) (190)
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device (1995) (185)
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells (2011) (179)
- Energy band‐gap bowing parameter in an AlxGa1−x N alloy (1987) (173)
- Deep level defects in n‐type GaN (1994) (172)
- Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE (1990) (169)
- Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer (1991) (166)
- Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels (2004) (164)
- Optical band gap in Ga1−xInxN (0 (1998) (157)
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer (1990) (152)
- Growth of single crystal GaN substrate using hydride vapor phase epitaxy (1990) (146)
- Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire (1996) (143)
- Stress and Defect Control in GaN Using Low Temperature Interlayers (1998) (143)
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN (1998) (140)
- Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN (1995) (131)
- Shallow donors in GaN—The binding energy and the electron effective mass (1995) (131)
- Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition (1995) (129)
- 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004) (121)
- Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices (1994) (117)
- Infrared lattice vibration of vapour-grown AlN (1967) (116)
- Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes (2000) (110)
- Thermal ionization energy of Si and Mg in AlGaN (1998) (108)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire Substrates (1988) (107)
- Optical Investigations of AlGaN on GaN Epitaxial Films (1999) (104)
- Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy (1999) (101)
- Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE (1991) (100)
- Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy (2000) (99)
- Key inventions in the history of nitride-based blue LED and LD (2007) (97)
- Free and bound excitons in thin wurtzite GaN layers on sapphire (1996) (97)
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride (2001) (96)
- Magneto‐optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance (1996) (96)
- Effect of AlN Buffer Layer on AlGaN/α-Al2O3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy (1988) (95)
- Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes (2011) (93)
- Photoemission capacitance transient spectroscopy of n‐type GaN (1995) (93)
- Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers (2007) (93)
- Evidence for two Mg related acceptors in GaN. (2009) (88)
- Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure (1994) (88)
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (2013) (88)
- Nobel Lecture: Fascinated journeys into blue light (2015) (86)
- High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio (2006) (86)
- Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy (1998) (84)
- GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate (2011) (83)
- Exciton lifetimes in GaN and GaInN (1995) (83)
- Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy (2007) (81)
- Electron beam effects on blue luminescence of zinc-doped GaN (1988) (81)
- Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers (1994) (80)
- Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures (1999) (80)
- Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC (2006) (79)
- p‐type conduction in Mg‐doped Ga0.91In0.09N grown by metalorganic vapor‐phase epitaxy (1995) (79)
- Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy (2006) (79)
- The growth of thick GaN film on sapphire substrate by using ZnO buffer layer (1993) (75)
- Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure (2001) (75)
- Growth of GaN and AlGaN for UV/blue p-n junction diodes (1993) (71)
- Preparation of AlxGa1-xN/GaN heterostructure by MOVPE (1990) (71)
- Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer (1999) (70)
- Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire (2003) (69)
- Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification (2007) (68)
- Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE (1986) (66)
- Conductivity control of GaN and fabrication of UV/blue GaN light emitting devices (1993) (64)
- Edge emission of AlxGa1−xN (1986) (63)
- Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio (2007) (63)
- 75 Å GaN channel modulation doped field effect transistors (1996) (63)
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates (2011) (63)
- Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates (2008) (63)
- Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors (2016) (61)
- High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN (2001) (60)
- Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy (2003) (60)
- PHOTOLUMINESCENCE RELATED TO THE TWO-DIMENSIONAL ELECTRON GAS AT A GAN/ALGAN HETEROINTERFACE (1996) (60)
- Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3 (1984) (59)
- Nitride semiconductors—impact on the future world (2002) (58)
- Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga 1 − x In x N / G a N quantum-well structures (2000) (57)
- Raman scattering in AlxGa1−xN alloys (1991) (56)
- Resonant Raman scattering in hexagonal GaN (1996) (55)
- Fluorescent SiC and its application to white light-emitting diodes (2011) (54)
- Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells (2000) (54)
- Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy (1991) (53)
- High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN (2008) (52)
- Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode (2001) (52)
- Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate (2010) (52)
- Novel UV devices on high-quality AlGaN using grooved underlying layer (2009) (52)
- Photoluminescence of residual transition metal impurities in GaN (1995) (51)
- Photoluminescence of GaN: Effect of electron irradiation (1998) (51)
- Optical properties of tensile-strained wurtzite GaN epitaxial layers (1997) (50)
- Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates (2006) (48)
- Quantized states in Ga 1 − x In x N / GaN heterostructures and the model of polarized homogeneous quantum wells (2000) (48)
- Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals (2001) (48)
- III-V nitrides (1997) (47)
- Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE (2006) (47)
- INTRINSIC OPTICAL PROPERTIES OF GAN EPILAYERS GROWN ON SIC SUBSTRATES : EFFECT OF THE BUILT-IN STRAIN (1996) (46)
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes (2011) (46)
- The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates (1994) (45)
- UV Light‐Emitting Diode Fabricated on Hetero‐ELO‐Grown Al0.22Ga0.78N with Low Dislocation Density (2002) (45)
- Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer (2000) (45)
- High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer (2009) (44)
- Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices (2001) (44)
- Optical properties of doped InGaN/GaN multiquantum-well structures (1999) (44)
- Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output (2017) (43)
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors (1998) (43)
- Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates (2003) (42)
- Crystal growth of column III nitrides and their applications to short wavelength light emitters (1995) (42)
- Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface (1996) (42)
- Optical gain of optically pumped Al0.1Ga0.9N/GaN double heterostructure at room temperature (1994) (42)
- GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes (2013) (41)
- Iron Acceptors in Gallium Nitride (GaN) (1993) (41)
- Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate (2005) (41)
- MOVPE growth of GaN on a misoriented sapphire substrate (1991) (41)
- High‐quality GaInN/GaN multiple quantum wells (1996) (40)
- Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire (2020) (40)
- One‐step lateral growth for reduction in defect density of a ‐plane GaN on r ‐sapphire substrate and its application in light emitters (2007) (40)
- Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting Devices (1992) (39)
- Free Excitons in GaN (1996) (39)
- Growth of high-quality AlN at high growth rate by high-temperature MOVPE (2006) (39)
- High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure (2005) (39)
- Low-Intensity Ultraviolet Photodetectors Based on AlGaN (1999) (38)
- Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy (2007) (38)
- Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy (1999) (37)
- Properties of the main Mg-related acceptors in GaN from optical and structural studies (2014) (37)
- Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN (1991) (36)
- Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005) (36)
- Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure (1996) (35)
- Recessed gate GaN MODFETs (1997) (35)
- Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances (1997) (34)
- Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells (2016) (34)
- Structural Defects in Heteroepitaxial and Homoepitaxial GaN (1995) (33)
- Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers (2000) (32)
- One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy (2009) (32)
- Dynamical study of the yellow luminescence band in GaN (1997) (32)
- Phonon mode behavior in strained wurtzite AlN / GaN superlattices (2005) (31)
- Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy (1998) (31)
- GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors (2018) (31)
- A GaN‐Based VCSEL with a Convex Structure for Optical Guiding (2018) (31)
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact (2006) (30)
- Light Generating Carrier Recombination and Impurities in Wurtzite GaN/Al2O3 Grown by MOCVD (1995) (30)
- High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector (2017) (30)
- Zn related electroluminescent properties in MOVPE grown GaN (1988) (30)
- Investigation of the Leakage Current in GaN P-N Junctions (1998) (30)
- Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers (1996) (30)
- Laser lift-off of AlN/sapphire for UV light-emitting diodes (2012) (30)
- Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy (2010) (29)
- Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy (2003) (29)
- Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps (2019) (29)
- Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE (2004) (29)
- Growth of GaN and AlGaN on (100) β-Ga2O3 substrates (2012) (29)
- White light-emitting diode based on fluorescent SiC (2012) (29)
- Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing (2018) (29)
- Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures (1999) (29)
- Reduction in defect density over whole area of (1$ \bar 1 $00) m ‐plane GaN using one‐sidewall seeded epitaxial lateral overgrowth (2007) (29)
- Surface‐mode stimulated emission from optically pumped GaInN at room temperature (1995) (29)
- The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility (1986) (29)
- Fracture of AlxGa1-xN/GaN Heterostructure –Compositional and Impurity Dependence– (2001) (29)
- Defect and stress control of AlGaN for fabrication of high performance UV light emitters (2004) (28)
- Blue Light: A Fascinating Journey (Nobel Lecture). (2015) (28)
- GaN growth on (30&3macr;8) 4H‐SiC substrate for reduction of internal polarization (2005) (28)
- Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure (2006) (28)
- Dynamics of laser sputtering at GaN, GaP, and GaAs surfaces (1991) (28)
- Control of strain in GaN using an In doping-induced hardening effect (2001) (28)
- High-Power UV-Light-Emitting Diode on Sapphire (2003) (28)
- The excitonic bandgap of GaN: Dependence on substrate (1997) (27)
- GaInN-based tunnel junctions with graded layers (2016) (27)
- Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant (2000) (27)
- Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study (2016) (27)
- Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates (2007) (27)
- PHOTOLUMINESCENCE INVESTIGATIONS OF ALGAN ON GAN EPITAXIAL FILMS (1999) (27)
- N K-edge x-ray-absorption study of heteroepitaxial GaN films (1997) (27)
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films (1999) (27)
- Progress and prospect of group-III nitride semiconductors (1997) (26)
- Mass transport and the reduction of threading dislocation in GaN (2000) (26)
- Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy (1998) (26)
- Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices (1989) (26)
- Optical characterization of III-nitrides (2002) (26)
- Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (2007) (26)
- GaInN‐based tunnel junctions with high InN mole fractions grown by MOVPE (2015) (26)
- Development of underfilling and encapsulation for deep-ultraviolet LEDs (2014) (26)
- ODMR Studies of MOVPE-Grown GaN Epitaxial Layers (1993) (25)
- IMPROVEMENT OF FAR-FIELD PATTERN IN NITRIDE LASER DIODES (1999) (25)
- Critical issues in AlxGa1−xN growth (2002) (25)
- Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer (2019) (24)
- Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers (2019) (24)
- Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles (2015) (24)
- GaN-Based p–n Junction Blue-Light-Emitting Devices (2013) (24)
- Photo-luminescence studies of hot electrons and real space transfer effect in a double quantum well superlattice (1986) (24)
- ZrB2 Substrate for Nitride Semiconductors (2003) (24)
- Progress in crystal growth of nitride semiconductors (2000) (24)
- Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures (2003) (24)
- An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances (1997) (24)
- Microscopic Investigation of Al0.43Ga0.57N on Sapphire (1999) (23)
- Atomic arrangement at the AlN/ZrB2 interface (2002) (23)
- Optical properties of InN with stoichoimetry violation and indium clustering (2005) (23)
- Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact (2007) (23)
- Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE (2008) (22)
- Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN (2002) (22)
- The Evolution of Nitride Semiconductors (1997) (22)
- Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes (2014) (22)
- Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures (1999) (22)
- Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy (2006) (22)
- Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates (1994) (21)
- Anisotropically Biaxial Strain in a-Plane AlGaN on GaN Grown on r-Plane Sapphire (2006) (21)
- High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact (2006) (21)
- High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy (2017) (21)
- UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology (2005) (21)
- Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy (1999) (20)
- Real space transfer of two dimensional electrons in double quantum well structures (1988) (20)
- Effect of Si on photoluminescence of GaN (1986) (20)
- Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures (1998) (20)
- Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis (2019) (20)
- Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction (2016) (20)
- Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy (2019) (19)
- Crystal growth and p‐type conductivity control of AlGaN for high‐efficiency nitride‐based UV emitters (2009) (19)
- Control of strain in GaN by a combination of H2 and N2 carrier gases (2001) (19)
- Multijunction GaInN-based solar cells using a tunnel junction (2014) (19)
- Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N (2013) (19)
- Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer (2017) (18)
- Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells (2002) (18)
- Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping (2020) (18)
- On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect (1998) (18)
- Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs (2015) (18)
- Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth (2013) (18)
- Interaction between plasmous and optical phonons in heavily doped G a P (1967) (18)
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy (2010) (17)
- GaN-based vertical cavity surface emitting lasers with periodic gain structures (2016) (17)
- Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry (2003) (17)
- Annihilation of Threading Dislocations in GaN/AlGaN (2002) (17)
- Crystal growth of column-III nitride semiconductors and their electrical and optical properties (1996) (17)
- Movpe Growth of High Quality Al x Ga 1−x N/Ga y In 1-y N (xg0, yl1) Heterostructures for Short Wavelength Light Emitter (1994) (17)
- Scattering and real space transfer in multi-quantum well structures (1985) (17)
- Gain-switching of GaInN multiquantum well laser diodes (2000) (17)
- Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer (2001) (17)
- Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors (2016) (17)
- Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy (2002) (17)
- Quantum-confined Stark effect in strained GaInN quantum wells on sapphire (0 0 0 1) (1998) (17)
- Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells (2002) (17)
- High‐performance UV detector based on AlGaN/GaN junction heterostructure‐field‐effect transistor with a p‐GaN gate (2009) (16)
- Violet and UV light‐emitting diodes grown on ZrB2 substrate (2003) (16)
- The Dependence of the Band Gap on Alloy Composition in Strained AlGaN on GaN (1998) (16)
- Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates (2001) (16)
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates (2010) (16)
- Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates (2002) (16)
- Field effect on thermal emission from the 0.40 eV electron level in InGaP (1993) (16)
- LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs (1984) (16)
- Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires. (2019) (16)
- High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors (2016) (15)
- Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN (1998) (15)
- Novel aspects of the growth of nitrides by MOVPE (2001) (15)
- Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates (2008) (15)
- Epitaxial lateral overgrowth of AlxGa1−xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices (2007) (15)
- Sidewall epitaxial lateral overgrowth of nonpolar a‐plane GaN by metalorganic vapor phase epitaxy (2008) (15)
- Fascinating journeys into blue light (Nobel Lecture) (2015) (15)
- Correlation between Device Performance and Defects in GaInN-Based Solar Cells (2012) (15)
- Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers (2010) (15)
- Cooling dynamics of excitons in GaN (1999) (15)
- Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors (1995) (14)
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy (1999) (14)
- Light extraction process in moth-eye structure (2006) (14)
- Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells (2002) (14)
- Influence of potential fluctuations on electrical transport and optical properties in modulation-doped G a N / A l 0.28 Ga 0.72 N heterostructures (1998) (14)
- High efficiency violet to blue light emission in porous SiC produced by anodic method (2010) (14)
- The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution (2019) (14)
- Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance (1997) (14)
- The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films (2004) (14)
- Renaissance and progress in crystal growth of nitride semiconductors (1999) (14)
- Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition (2019) (14)
- AlGaN/GaInN/GaN heterostructure field‐effect transistor (2011) (14)
- Deep levels in InxGa1-xAsyP1-y grown on (100) GaAs by LPE (1989) (14)
- AlGaN-based UV-B laser diode with a high optical confinement factor (2021) (13)
- Future challenges and directions for nitride materials and light emitters (1997) (13)
- A hydrogen-related shallow donor in GaN? (2006) (13)
- Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure (2000) (13)
- Mg-related acceptors in GaN (2010) (13)
- InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport (2000) (13)
- Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain (2000) (13)
- Nitride‐based light‐emitting solar cell (2010) (13)
- Electrical Properties of Sulfur‐Doped Gallium Phosphide (1968) (13)
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs (1988) (13)
- Localized Donors in Gan: Spectroscopy Using Large Pressures (1997) (13)
- Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells (1999) (13)
- Properties of nitride‐based photovoltaic cells under concentrated light illumination (2012) (13)
- High hole concentration in Mg-doped a-plane Ga1−xInxN (0 (2008) (13)
- Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design (2000) (13)
- Photoluminescence of exciton-polaritons in GaN (1997) (13)
- Crystal Growth of High‐Quality AlInN/GaN Superlattices and of Crack‐Free AlN on GaN: Their Possibility of High Electron Mobility Transistor (2001) (13)
- Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells (2004) (12)
- Stimulated emission in MOVPE-grown GaN film (1991) (12)
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System (1985) (12)
- Effect of Si Doping on The Structure of Gan (1996) (12)
- Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes (2012) (12)
- Electrical properties of n-type AlGaN with high Si concentration (2016) (12)
- Electron Mobility and Drag Effect in p-Type Silicon (1985) (12)
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (2013) (12)
- Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth (2007) (12)
- Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN (1997) (12)
- Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy (2000) (12)
- Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells (2002) (12)
- Mass Transport of AlxGa1—xN (2002) (12)
- Thick crack-free AlGaN films deposited by facet-controlled epitaxial lateral overgrowth (2003) (12)
- DX-like behavior of oxygen in GaN (2001) (12)
- Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiNx intermediate layer (2016) (12)
- Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate (2011) (12)
- Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE (2003) (12)
- Growth and Characterization of Core-Shell Structures Consisting of GaN Nanowire Core and GaInN/GaN Multi-Quantum Shell (2019) (12)
- Realization of extreme light extraction efficiency for moth‐eye LEDs on SiC substrate using high‐reflection electrode (2010) (12)
- Optical Properties of Ingan/GaN Multi Quantum Well Structures (1997) (12)
- Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping (2007) (12)
- GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces (2019) (12)
- Magneto-optical investigation of the neutral donor bound exciton in GaN (1995) (11)
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility (1993) (11)
- Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN (2017) (11)
- Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures (2015) (11)
- Dominant shallow acceptor enhanced by oxygen doping in GaN (2006) (11)
- Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position (2004) (11)
- Vapour-phase epitaxial growth of ZnS on GaP (1978) (11)
- Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates (2018) (11)
- Activation energy of Mg in Al0.25Ga0.75N and Al0.5Ga0.5N (2009) (11)
- Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition (2020) (11)
- Heteroepitaxy of Group III Nitrides for Device Applications (1997) (11)
- Role of surface defects in the efficiency degradation of GaInN-based green LEDs (2019) (11)
- On the Structural Properties of Vapor-Deposited Germanium Layers (1962) (11)
- Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer (2019) (11)
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy (2000) (11)
- AlGaN/GaN HFETs on Fe‐doped GaN substrates (2010) (11)
- Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD (2020) (11)
- 2.2 eV Luminescence in GaN (1995) (11)
- Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection (2019) (10)
- Theoretical investigation of nitride nanowire‐based quantum‐shell lasers (2017) (10)
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (2013) (10)
- Melt-back etching of GaN (1997) (10)
- Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications (2016) (10)
- Microstructures of GaInN/GaInN Superlattices on GaN Substrates (2010) (10)
- Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3 (1990) (10)
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN (2009) (10)
- Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth : optical evidences for a reduced stacking fault density (2008) (10)
- Correlation between Optical and Structural Characteristics in Coaxial GaInN/GaN Multiple Quantum Shell Nanowires with AlGaN Spacers. (2020) (10)
- High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE (2004) (10)
- Reduction of threading dislocation density in AlXGa1−XN grown on periodically grooved substrates (2002) (10)
- VPE Growth of ZnS Incorporating Indium on GaP (1986) (10)
- Injection efficiency in AlGaN-based UV laser diodes (2011) (10)
- Hybrid simulation of light extraction efficiency in multi-quantum-shell (MQS) NW (nanowire) LED with a current diffusion layer (2019) (10)
- High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing (2020) (10)
- Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of the O P donor in GaP (1998) (10)
- Optical characterisation of GaN and related materials (1997) (10)
- Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN (2000) (10)
- Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates (2008) (10)
- Development of an Ultraviolet A1 Light Emitting Diode-based Device for Phototherapy (2012) (10)
- Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic resonance study (2000) (10)
- Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy (2019) (9)
- Free-to-bound radiative recombination in highly conducting InN epitaxial layers (2004) (9)
- Chapter 7 Organometallic Vapor-Phase Epitaxy of Gallium Nitride for High-Brightness Blue Light-Emitting Diodes (1997) (9)
- 450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers (2019) (9)
- n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers (2021) (9)
- Fabrication of enhancement‐mode AlxGa1–xN/GaN junction heterostructure field‐effect transistors with p‐type GaN gate contact (2007) (9)
- Oxygen related shallow acceptor in GaN (2004) (9)
- Reduction in threshold current density of 355 nm UV laser diodes (2011) (9)
- Enhancement of light extraction efficiency of blue-light-emitting diodes by moth-eye structure (2010) (9)
- High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate (2011) (9)
- GaInN‐based solar cells using GaInN/GaInN superlattices (2011) (9)
- Exciton Lifetimes in GaN (1995) (9)
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnSxSe1-x (1987) (9)
- Microstructure in nonpolar m-plane GaN and AlGaN films (2007) (9)
- X‐ray diffraction reciprocal lattice space mapping of a‐plane AlGaN on GaN (2006) (9)
- Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes (2013) (9)
- Electronic structure and temperature dependence of excitons in GaN (1996) (8)
- Electric properties of GaN : Zn MIS-type light emitting diode (1993) (8)
- Transparent electrode for UV light‐emitting‐diodes (2011) (8)
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors (2013) (8)
- Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates (2006) (8)
- Measurement of Electron Mobility in p-Si by Time-of-Flight Technique (1985) (8)
- Optical signatures of dopants in GaN (2006) (8)
- Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers (1988) (8)
- The Residual Donor Binding Energy in AlGaN Epitaxial Layers (1998) (8)
- Relaxation and recovery processes of AlxGa1−xN grown on AlN underlying layer (2009) (8)
- The Effective Mass Donor in Galliumnitride (1995) (8)
- Control of stress and crystalline quality in GaInN films used for green emitters (2008) (8)
- Recent progress of crystal growth, conductivity control and light emitters of group III nitride semiconductors (1996) (8)
- Charactrization of Residual Transition Metal Ions in GaN and AIN (1995) (8)
- Progress in crystal growth and future prospects of group III nitrides by metalorganic vapor-phase epitaxy (1998) (8)
- AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage (2011) (8)
- Microstructure of a‐plane AlN grown on r‐plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy (2007) (8)
- Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers (2020) (8)
- Tuning the Resonant Frequency of a Surface Plasmon by Double-Metallic Ag/Au Nanoparticles for High-Efficiency Green Light-Emitting Diodes (2019) (8)
- Photoluminescence of GaN/AlN superlattices grown by MOCVD (2005) (8)
- GaInN/GaN multiple quantum wells green LEDs (1997) (8)
- Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers (2020) (8)
- Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes (2009) (7)
- Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires (2019) (7)
- Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates (2012) (7)
- Epitaxial Growth and Properties of AlxGa1-xN by MOVPE (1986) (7)
- Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers (2002) (7)
- Growth of InGaP epitaxial layers by liquid phase electro-epitaxy (1991) (7)
- Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration (1999) (7)
- Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes (2019) (7)
- Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well (1997) (7)
- The evolution of group III nitride semiconductors: Seeking blue light emission (2000) (7)
- Relaxation of misfit-induced stress in nitride-based heterostructures (2002) (7)
- Growth-induced defects in AlN/GaN superlattices with different periods (2003) (7)
- Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate (2009) (7)
- Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method (2011) (7)
- Study on the Main‐Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN‐Based DUV‐LEDs (2018) (7)
- Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers (2020) (7)
- GaInN/GaN p‐i‐n light‐emitting solar cells (2010) (7)
- Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO (2010) (7)
- Electrical properties of relaxed p-GaN/p-AlGaN superlattices and their application in ultraviolet-B light-emitting devices (2019) (7)
- Annealing of the sputtered AlN buffer layer on r‐plane sapphire and its effect on a‐plane GaN crystalline quality (2017) (7)
- Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes (2013) (7)
- In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology (2002) (7)
- Dislocation density dependence of stimulated emission characteristics in AlGaN/Al multiquantum wells (2013) (7)
- Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes (2019) (7)
- Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor (1963) (7)
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate (2011) (7)
- Vapor phase epitaxial growth of nitrogen-doped In1−xGaxP alloys 0385 V 2 (1974) (7)
- Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template (2017) (7)
- In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth (2014) (7)
- Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures (2021) (6)
- Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures : Role of depletion fields and polarization fields (2003) (6)
- Piezoelectric Quantization in GaInN thin Films and Multiple Quantum Well Structures (1998) (6)
- Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures (1998) (6)
- Behaviour of Zn as dopant in the photoluminescence of AlxGa1-xN (1986) (6)
- Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions (2021) (6)
- Effect of UV irradiation on the apoptosis and necrosis of Jurkat cells using UV LEDs (2009) (6)
- Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC (2007) (6)
- Widegap Column-Ill Nitride Semiconductors for UV/Blue Light Emitting Devices (6)
- Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN (2001) (6)
- High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy (2016) (6)
- Photoluminescence and optical gain in highly excited GaN (1997) (6)
- Selective dynamical study of luminescences near the surface and the interface of epitaxial GaN (1995) (6)
- Growth of high‐quality thick AlGaN by high‐temperature metalorganic vapor phase epitaxy (2008) (6)
- Room Temperature Ultraviolet/Blue Light Emitting Devices Based on AlGaN/GaN Multi-Layered Structure (1992) (6)
- Structural characterization of Al1−xInxN lattice-matched to GaN (2000) (6)
- Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering (1998) (6)
- A Supplement to “Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge” (1963) (6)
- Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes (2021) (6)
- Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy. (2000) (6)
- Polarization dilution in a Ga‐polar UV‐LED to reduce the influence of polarization charges (2015) (6)
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation (2004) (6)
- Comparison of AlxGa1−xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates having macrosteps (2019) (6)
- LPE growth of InGaP/InGaAsP multiple thin layers on (111)A GaAs substrates (1989) (6)
- In situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth of low-temperature-GaN buffer layer (2012) (6)
- High-efficiency UV and blue emitting devices prepared by MOVPE and low-energy electron-beam irradiation treatment (1991) (5)
- Improvement of light extraction efficiency of 350‐nm emission UV light‐emitting diodes (2014) (5)
- Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells (2006) (5)
- AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate (2021) (5)
- Near Band Edge Emission of ZnSxSe1-x Epitaxial Layers on GaP (1987) (5)
- Improvement of emission efficiency with a sputtered AlN buffer layer in GaInN-based green light-emitting diodes (2019) (5)
- Fabrication of UV devices on various plane substrates (2005) (5)
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis (1985) (5)
- Tunneling effects in short period strained AlN/GaN superlattices (2009) (5)
- Quasi-ballistic thermal conduction in 6H–SiC (2021) (5)
- Advantages of the moth‐eye patterned sapphire substrate for the high performance nitride based LEDs (2014) (5)
- Growth of low‐dislocation‐density AlGaN using Mg‐doped AlN underlying layer (2010) (5)
- Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth (2008) (5)
- Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs (1990) (5)
- Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005) (5)
- Weakly localized transport in modulation-doped GaN/AlGaN heterostructures (1998) (5)
- Optical observation of discrete well width fluctuations in wide band gap III‐nitride quantum wells (2007) (5)
- Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis (2020) (5)
- Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates (2007) (5)
- Homoepitaxial growth of AlN layers on freestanding AlN substrate by metalorganic vapor phase epitaxy (2014) (5)
- High‐efficiency AlGaN based UV emitters grown on high‐crystalline‐quality AlGaN using grooved AlN layer on sapphire substrate (2007) (5)
- Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation (2020) (5)
- Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy (2003) (5)
- Frontispiece: Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes (Phys. Status Solidi A 7/2011) (2011) (5)
- Activation energy of Mg in a ‐plane Ga1–x Inx N (0 < x < 0.17) (2009) (5)
- Study of Zn-associated levels in GaN (1992) (5)
- Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations (2020) (5)
- High‐reflectivity Ag‐based p‐type ohmic contacts for blue light‐emitting diodes (2009) (5)
- Optical characterization of InGaN/GaN MQW structures without in phase separation (2001) (5)
- Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions (2014) (5)
- X-Ray Interference and Crystal Truncation Rod Observation of GaN and GaInN Layers Grown on Sapphire with AlN Buffer Layer (1999) (5)
- Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method (1983) (5)
- Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctions (2020) (5)
- Fascinated Journeys into Blue Light (2015) (5)
- Photoluminescence Decay Properties of Indium Doped ZnS (1986) (5)
- Radiative Energy Transfer in GaN:Mg/Al2O3:Cr3+ Epitaxial Systems (1993) (5)
- Impact of low-temperature buffer layers on nitride-based optoelectronics (2002) (5)
- Growth of AlGaN/GaN heterostructure on vicinal m‐plane free‐standing GaN substrates prepared by the Na flux method (2011) (5)
- Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields (2009) (5)
- Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method (2000) (5)
- Quantum beat spectroscopy on excitons in GaN (1997) (4)
- Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate (2006) (4)
- Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities (2013) (4)
- GaN-based vertical cavity surface emitting lasers with lateral optical confinements and conducting distributed Bragg reflectors (2020) (4)
- Materials Research Society Symposium Proceedings. Volume 449. III-V Nitrides. December 2-6, 1996, Boston, Massachusetts. (1996) (4)
- Low-dislocation-density GaN and AlxGa1−xN (x⩽0.13) grown on grooved substrates (2002) (4)
- Thermodynamical Analysis and Luminescence Properties of Vapor-Grown ZnSxSe1-x II–Bypass Flow Effect– (1989) (4)
- Evidence for moving of threading dislocations during the VPE growth in GaN thin layers (2011) (4)
- Etch Patterns and Dislocation Etch Pits on Germanium with KI-I2 Redox System (1962) (4)
- N-K-Edge EXAFS Study of Epitaxial GaN Films (1996) (4)
- Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction (2020) (4)
- Heteroepitaxial technology for high-efficiency UV light-emitting diode (2002) (4)
- Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires. (2021) (4)
- Atomic Structure Of Grain Boundaries And Interfaces In Iiinitrides Epitaxial Systems (1997) (4)
- Control of crystalline quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas (2000) (4)
- Characterizations of GaN nanowires and GaInN/GaN multi-quantum shells grown by MOVPE (2019) (4)
- Mg incorporation in AlGaN layers grown on grooved sapphire substrates (2002) (4)
- Atomic layer epitaxy of AlGaN (2010) (4)
- Phonon-assisted tunnelling in a double quantum well structure (1992) (4)
- Boron nitride films prepared by RF sputtering (1985) (4)
- Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells (2001) (4)
- Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs (2021) (4)
- UV-LED Using p-Type GaN/AlN Supperlattice Cladding Layer (2003) (4)
- Discrete Stark‐Like Ladder in Piezoelectric GaInN/GaN Quantum Wells (1999) (4)
- Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures (1998) (4)
- Real space transfer and modulation of electron mobility in GaAs/AlGaAs double quantum well structures (1992) (4)
- Photoluminescence excitation studies of the optical transitions in GaN (1996) (4)
- Hot Electron and Real Space Transfer in Double-Quantum-Well Structures (1991) (4)
- Control of growth mode in Mg-doped GaN/AlN heterostructure (2014) (4)
- Effect of In-Doping on the Properties of as-Grown p-Type GaN Grown by Metalorganic Vapour Phase Epitaxy (2002) (4)
- The role of the multi buffer layer technique on the structural quality of GaN (2000) (4)
- Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy (2008) (4)
- Lattice-Mismatch-Induced Deep Level in InxGa1-xAsyP1-y (0≦y≦0.41) Grown on (100) GaAs (1989) (4)
- Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy (2003) (4)
- Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 (1997) (4)
- Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies (1995) (4)
- Development of AlGaN DUV-LED (2013) (4)
- Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers (1998) (4)
- The surface treatment of sapphire substrate and its effects on the initial stage of GaN growth by MOVPE (2003) (4)
- Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led (2000) (4)
- Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant (2001) (4)
- Mass transport, faceting and behavior of dislocations in GaN (1999) (4)
- High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact (2008) (4)
- Multiple peak spectra from InGaN/GaN multiple quantum wells (2000) (4)
- Crystal growth and properties of column III nitrides for short wavelength light emitters (1994) (3)
- Revised Erratum to “Key inventions in the history of nitride-based blue LED and LD” Isamu Akasaki [J. Crystal Growth 300 (2007) 2–10] (2010) (3)
- Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method (2014) (3)
- Experimental Studies of Impurity Doping in Vapor Growth of Ge (1963) (3)
- Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN (2003) (3)
- Nitride‐based hetero‐field‐effect‐transistor‐type photosensors with extremely high photosensitivity (2013) (3)
- Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length (2021) (3)
- Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter (1995) (3)
- Optical-Gain Measurements on GaN and Al x Ga 1-x N Heterostructures (1997) (3)
- High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy (2020) (3)
- GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy (2021) (3)
- Optical properties of electron-irradiated GaN (1998) (3)
- Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC (2009) (3)
- MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs (2020) (3)
- Optimization of initial MOVPE growth of non‐polar m‐ and a‐plane GaN on Na flux grown LPE‐GaN substrates (2011) (3)
- Characterization of the crystalline quality on GaN on sapphire and ternary alloys (1998) (3)
- Temperature Dependence of Electron Mobility in GaAs (1965) (3)
- Growth and Light Properties of Fluorescent SiC for White LEDs (2012) (3)
- Al0.1Ga0.9N/GaN二重ヘテロ接合からの光ポンピングによる室温における低しきい表面誘導放出 (1993) (3)
- Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer (2011) (3)
- Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction. (2021) (3)
- Evidence of Potential Fluctuations in Modulation Doped GaN/AlGaN Heterostructures (1997) (3)
- Growth and characterization of GaN grown on moth-eye patterned sapphire substrates (2010) (3)
- High-resolution DLTS and its application to lattice-mismatch-induced deep levels in InGaP (1992) (3)
- Introduction of the moth-eye patterned sapphire substrate technology for cost-effective high-performance LEDs (2013) (3)
- Photoluminescence related to the 2-dimensional electron gas in modulation doped GaN/AlGaN structures (1995) (3)
- Transient four wave mixing experiments on GaN (1997) (3)
- Influence of oxygen on luminescence and vibrational spectra of Mg‐doped GaN (2003) (3)
- Spectral Study of Photoluminescence from GaInN/GaN MQWs Using CW and Time‐Resolved Measurements (1999) (3)
- Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices (2012) (3)
- Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates (2008) (3)
- Room temperature pulsed operation of nitride nanowire-based multi-quantum shell laser diodes by MOVPE (2021) (3)
- Light-Emitting Diodes in the Solid-State Lighting Systems (3)
- Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices (2000) (3)
- 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method (2006) (2)
- Structural and optical properties of Al 1-xInxN grown by metal organic vapor-phase epitaxy (1999) (2)
- Renaissance and Progress in Nitride Semiconductors - My Personal History of Nitride Research - (2000) (2)
- Widegap Group-III Nitride Semiconductors for UV/Blue Light Emitting Devices (1994) (2)
- Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers (2015) (2)
- Optimization of indium tin oxide layer thickness for surface-plasmon-enhanced green light-emitting diodes (2019) (2)
- Comparison of the simulation and experiments of the nitride-based UV light emitting diodes (2007) (2)
- Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer (2000) (2)
- Optical Transitions of the Mg Acceptor in GaN (1999) (2)
- Optimization of electrode configuration in large GaInN light‐emitting diodes (2009) (2)
- High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors (2019) (2)
- Etching Characteristics and Light Figures of the {111} Surfaces of GaAs (1965) (2)
- Microstructural analysis of thick AlGaN epilayers using Mg‐doped AlN underlying layer (2011) (2)
- Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures (2013) (2)
- Progress and future prospects of group III nitride semiconductors (1996) (2)
- In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps (2020) (2)
- Growth of GaN on highly mismatched substrate and its application to novel devices (1999) (2)
- Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures (1999) (2)
- InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy (2009) (2)
- Growth of Crack-Free Thick AlGaN Layer and its Application to GaN-Based Laser Diode (1999) (2)
- Photoluminescence study of near-surface GaN/AlN superlattices (2008) (2)
- Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal‐organic vapor phase epitaxy (2009) (2)
- Polarization of light from an optically pumped (AlGaN)/(GaInN) double heterostructure (1994) (2)
- Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals (2016) (2)
- High‐output‐power AlGaN/GaN ultraviolet‐light‐emitting diodes by activation of Mg‐doped p‐type AlGaN in oxygen ambient (2010) (2)
- Growth and characterization of InGaAs bulk crystals grown by liquid phase electro-epitaxy (1993) (2)
- Fabrication of high-efficiency LED using moth-eye structure (2011) (2)
- AlN and AlGaN by MOVPE for UV Light Emitting Devices (2008) (2)
- Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u‐GaN buffer layer (2011) (2)
- Transverse-mode control in GaN-based laser diodes (2001) (2)
- Near K-Edge Absorption Spectra of III-V Nitrides (2001) (2)
- Temperature dependence of normally off mode AlGaN/GaN heterostructure field‐effect transistors with p‐GaN gate (2010) (2)
- Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB 2 ,(30 3 8) 4H-SiC and r -faced Sapphire. (2004) (2)
- Effects of Mg dopant in Al-composition-graded Al x Ga1−x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction (2021) (2)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter (1988) (2)
- Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient (2009) (2)
- AlGaN-based ultraviolet-B laser diode at 298 nm with threshold current density of 25 kA/cm2 (2020) (2)
- Carrier and exciton dynamics in In0.15Ga0.85 NGaN multiple quantum well structures (1999) (2)
- Formation and characterization of porous SiC by anodic oxidation using potassium persulfate solution (2018) (2)
- The Evolution of Nitride-Based Light-Emitting Devices (2002) (2)
- Fabrication and Characterization of GaN‐Based Laser Diode Grown on Thick n‐AlGaN Contact Layer (1999) (2)
- Sublimation growth of AlN bulk crystals by seeded and spontaneous nucleation methods (2004) (2)
- Silicon contamination of GaAs Crystals Grown in Glassy Carbon Boats (1966) (2)
- Erratum: “Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode” (2008) (2)
- Optical properties of undoped, n-doped and p-doped GaN/AlN superlattices (2006) (1)
- MASS TRANSPORT OF GaN AND REDUCTION OF THREADING DISLOCATIONS (2000) (1)
- Chapter 15 Lasers (1997) (1)
- Defects in highly Mg‐doped AlN (2010) (1)
- Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport (2001) (1)
- Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions (2022) (1)
- Time-Resolved Electroluminescence Spectroscopy of a White Light Emitting Diode (2018) (1)
- Mechanisms of generation and atomic structure of defects in III-nitrides epitaxial systems for device applications (1998) (1)
- Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by metalorganic vapor phase epitaxy (2019) (1)
- Recent Progress in Crystal Growth and Conductivity Control of Wide Bandgap Group III Nitride Semiconductors (1998) (1)
- Role of the Substitutional Oxygen Donor in the Residual n-type Conductivity in GaN (1998) (1)
- PHOTOLUMINESCENCE STUDIES OF GaN AND AlGaN LAYERS UNDER HYDROSTATIC PRESSURE (1995) (1)
- A verification of immiscibility in InGaAsP quaternary alloys (1988) (1)
- Etch Patterns in Germanium (1962) (1)
- MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells (2021) (1)
- Optimization of Carrier Distributions in Periodic Gain Structures toward Blue VCSELs (2014) (1)
- Infrared Absorption in n-Type GaAs (1966) (1)
- High Temperature MOVPE Growth of Al x Ga 1−x N (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices (2006) (1)
- Realization of high-crystalline-quality and thick GaInN films (2009) (1)
- Metal–Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density (2013) (1)
- 1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs (2016) (1)
- The Importance of Interface Control in Crystal Growth of Nitride Semiconductors (2000) (1)
- Characterization of ZnSxSe1-x/(100)Gap Heterointerface by Raman Scattering (1988) (1)
- Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter (1988) (1)
- Deep center scattering potential in InGaP (1994) (1)
- Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride (1999) (1)
- A4.2 Raman and IR studies of InN (1999) (1)
- Electron microscope study of modulated structures and heterointerfaces in LPE-grown GaInAsP layers lattice-matched on GaAs (1989) (1)
- Improved Reverse Leakage Current in GaInN-Based LEDs With a Sputtered AlN Buffer Layer (2019) (1)
- Reduction in operating voltage of UV laser diode (2010) (1)
- MOVPE growth and characterization of Al1−xInxN/GaN multiple layers (2002) (1)
- Mechanism for Radiative Recombination in In 0.15 Ga 0.85 N/GaN Multiple Quantum Well Structures (1998) (1)
- Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation (2020) (1)
- Influence of silane flow rate on the structural and optical properties of GaN nanowires with multiple-quantum-shells (2021) (1)
- Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible (2019) (1)
- High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector (2000) (1)
- Nitride Semiconductor Surfaces. Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire. (2000) (1)
- Edge and Self-Activated High Band Emission of ZnSxSe1-x Single Crystal Epitaxial Layers (1988) (1)
- Device fabrication for multiple quantum shell nanowires based laser diodes (2021) (1)
- Oxygen in InxGa1-xAsyP1-y Grown on GaAs (1992) (1)
- Microstructural issues in UV light emitting nitride semiconductors (2006) (1)
- All MOVPE grown nitride-based LED having sub mm underlying GaN (2008) (1)
- Small current collapse in AlGaN/GaN HFETs on a‐plane GaN self‐standing substrate (2012) (1)
- Improvement in crystalline quality of thick GaInN on m‐plane 6H‐SiC substrates using sidewall epitaxial lateral overgrowth (2008) (1)
- Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display (2003) (1)
- Energy loss rate of excitons in GaN (1999) (1)
- Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire (2021) (1)
- Moth-Eye Light-Emitting Diodes (2004) (1)
- Electric Fields in Polarized GaInN / GaN heterostructures 2 (2003) (1)
- Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors (2012) (1)
- Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities (2013) (1)
- Conductivity measurements on GaN grown by OMVPE and HVPE (1995) (1)
- Control of p-type conduction in a-plane Ga1−xInxN (0<x<0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy (2008) (1)
- Developments of GaN-based VCSELs with epitaxially grown DBRs (2021) (1)
- Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes (2000) (1)
- Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps (2020) (1)
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT (2006) (1)
- Temperature dependence of the radiative recombination in GaN (1996) (1)
- Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells (2002) (1)
- Room Temperature Photoluminescence Linewidth versus Material Quality of GaN (1997) (1)
- Combination of Indium--Tin Oxide and SiO (2013) (1)
- Nitride Semiconductor Surfaces. Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method. (2000) (1)
- Retraction: “Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer” (2016) (1)
- The Evolution of Blue Light-Emitting Devices and Nitride Semiconductors (2004) (1)
- Proceedings of the topical workshop on III-V nitrides : Nagoya Congress Center, Nagoya, Japan 21-23 September 1995 (1997) (1)
- Electron gas in modulation doped GaN/AlGaN structures (1997) (1)
- GaNSb alloys grown with H2 and N2 carrier gases (2016) (1)
- Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire (2008) (1)
- Optical observation of discrete well width fluctuations in wide band gap III‐nitride quantum wells [phys. stat. sol. (b) 244, No. 5, 1727–1734 (2007)] (2007) (1)
- Electrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer (2000) (1)
- CBED study of grain misorientations in AlGaN epilayers. (2005) (1)
- Group III nitrides grown on 4H-SiC (30 3 8) substrate by metal-organic vapor phase epitaxy (2004) (1)
- A 3 . 2 Raman and IR studies of GaN (1999) (1)
- Low threshold current density in GaInN-based laser diodes with GaN tunnel junctions (2021) (1)
- Detailed feasibility study on a flame detector using AlGaN photosensors (2000) (1)
- In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors (2020) (1)
- Turn-off length and lateral field in the p-base layer of a GTO thyristor (1985) (1)
- Mie Resonant Absorption and Infrared Emission in InN Related to Metallic Indium Clusters (2005) (1)
- Influence of trap level on an Al0.6Ga0.4N/Al0.5Ga0.5N metal—semiconductor—metal UV photodetector (2019) (1)
- Radiative Recombination in InGaN/GaN Multiple Quantum Wells (2000) (0)
- Growth and characterization of III-nitride semiconductors on ScAlMgO4 (2020) (0)
- Precise composition control for AlInN/GaN DBRs by in-situ curvature measurements (2019) (0)
- Evaluation on the Diffraction Efficiency of Holographic Diffraction Grating Device (HDGD) with 3-D Graphic Image (1997) (0)
- Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer (2017) (0)
- GaNSb alloys grown with H (2016) (0)
- Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well (2003) (0)
- Phosphor and a light emitting diode (2004) (0)
- Growth of GaN on 4H-SiC with different crystal planes (2004) (0)
- Distinct magnesium incorporation behavior in laterally grown GaN and AlGaN (2003) (0)
- Device Characterization of GaInN-based LED using Quantum-Shell Structure (2018) (0)
- Int. Conf. on Physics of Semiconductors ICPS-27, 2004, Flagstaff, USA (2004) (0)
- Enhanced Photoluminescence Efficiency in GaInN Green Light-emitting Diodes by n-GaN Surface Etching. (2020) (0)
- [Young Scientist Presentation Award Speech] Improvement of quality in AlGaN underlying layer by growth mode control and its application to UV-B laser (2019) (0)
- GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction (2016) (0)
- A light-emitting semiconductor device with gallium nitride compound (1991) (0)
- Characteristics of GaN-based VCSELs with conducting AlInN/GaN DBR (2019) (0)
- Analyze of AlGaN/GaN heterostructure by MOVPE using in situ technology (2016) (0)
- Nitride-based buried tunnel junctions towards VCSELs (2017) (0)
- Physics and simulation of group-III-nitride-based moth-eye LEDs (2005) (0)
- Mechanism of Stimulated Emission in GaN and Effect of Alloying (1997) (0)
- Optical Absorption in Polarized Ga_ In_xN/GaN Quantum Wells(Semiconductors) (2002) (0)
- Current injection and light confinement for UVB light emitting devices with graded p-AlGaN (2019) (0)
- Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport (2001) (0)
- MOVPE method of producing a buffer layer with a mixture of single crystal and amorphous state (1990) (0)
- A long road to a bright future (2015) (0)
- Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact (2005) (0)
- Acceptors in Mg doped GaN, optical properties and metastability (2008) (0)
- High Efficiency UV Light Emitter Using High-Crystalline-Quality AlGaN (2004) (0)
- Optical simulation of multi-quantum-shell-LED fabricated on PSS (2019) (0)
- Formation of porous SiC and PL enhancement by Al2O3 passivation (2016) (0)
- RETROSPECT – Highlights from recent Annalen der Physik issues (2015) (0)
- Piezoelectric Effect in GaInN/GaN Heterostructure and Quantum Well Structure (2003) (0)
- In-situ curvature measurements for high-quality AlInN/GaN DBRs (2019) (0)
- Highly p-Type a-GaN Grown on r-Plane Sapphire Substrate (2005) (0)
- Blue Light: A Fascinating Journey (Nobel Lecture) (2015) (0)
- Piezoelectric Level Splitting in GaInN/GaN Quantum Wells (1998) (0)
- High current operation of UV-B devices fabricated on low dislocation and relaxed AlGaN (2019) (0)
- Nitride semiconductor layer structure and their application in semiconductor lasers (2000) (0)
- Enhanced internal quantum efficiency of green emission GaInN/GaN multiple quantum wells by surface plasmon coupling (2013) (0)
- Metastable UV luminescence in Mg-doped GaN layers grown on freestanding GaN substrates (2008) (0)
- Properties of dopants and defects in GaN from bound exciton spectra (2008) (0)
- Filamentation and fundanmntal-rnode operation in InGaN quantum well lasers (2000) (0)
- Recent progress in nitride-based UV light emitters (2005) (0)
- Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN (2010) (0)
- Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED (2015) (0)
- Demonstration of nitride-based lasers excited by electron beam (Conference Presentation) (2017) (0)
- [Highlight]Ultraviolet-B laser diode with composition-graded p-AlGaN on lattice-relaxed Al 0.6 Ga 0.4 N with sapphire substrate (2020) (0)
- GaN-based VCSELs with lateral optical confinement structures (2017) (0)
- Measurement of the defect distribution of an InGaAsP/GaAs heterojunction diode by LBIC (1987) (0)
- Cover Picture: Properties of nitride-based photovoltaic cells under concentrated light illumination (Phys. Status Solidi RRL 4/2012) (2012) (0)
- State of the Art of Light Emitting Diodes (1971) (0)
- Simulation of the light extraction efficiency in the GaInN based Multi-Quantum-Shell (MQS) Light-Emitting-Diode (2018) (0)
- Perspective of GaN/GaAIN based ultra-violet/blue lasers (1992) (0)
- 2a-D-19 Electron Transport in GaAs/AlGs Doble Quantum Wire (1990) (0)
- High Efficiency Uv Emitter Using High Quality GaN/Al x Ga 1−x N Multi-Quantum Well Active Layer (2000) (0)
- Effects of Buffer Layer in MOVPE Growth of GaN Film on Sapphire Substrate (1989) (0)
- Growth and characterization of GaN nanowires (NWs) on the hole-shaped-patterned Al 0.03 Ga 0.97 N templates (2017) (0)
- Materials Research Society 2002 Fall Meeting in Boston (2003) (0)
- Investigation of laser scribing in fabrication of nitride-based LEDs for improvement of light extraction efficiency (2014) (0)
- Present and Future Prospects of Semiconductor Short Wavelength Light Emitters (1995) (0)
- Why did I continue the development of blue light-emitting devices, while many others abandoned their research? (2016) (0)
- On the Feasibility of Fundamental-Mode Operation in Unstable-Resonator InGaN Lasers (2000) (0)
- AlGaN-based laser diodes for the short-wavelength ultraviolet region (2016) (0)
- Contact Resistance Variation of Printed Circuit Board Connector Due to Thermal Stress and Its Thermal Deformation Measurement by Using Holography (1997) (0)
- Hollow core dislocations in Mg-doped AlGaN (2002) (0)
- A process for the production of epitaxial layers defectless (1974) (0)
- A Study on the Photo-resistance and the Decomposition Mechanism of Perfluoro Resins Applied to Encapsulating Deep Ultra Violet LEDs (2017) (0)
- Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate (2005) (0)
- Development of ultra-high speed light emitters and detectors for visible light communication (2018) (0)
- Crystal growth and optical property in core-shell structure consisting of GaN nanowire and GaInN/GaN multi-quantum shell (MQS) (Conference Presentation) (2020) (0)
- Low Resistive and Low Absorptive Nitride-Based Tunnel junctions (2015) (0)
- Piezoelectric effects in the radiative centers of GaInN/GaN quantum wells and devices (1999) (0)
- UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template (2004) (0)
- Erratum: “Etching Characteristics and Light Figures of the {111} Surfaces of GaAs” [J. Electrochem. Soc., 112, 927 (1965)] (1965) (0)
- A method of manufacturing a p-type layer region of the semiconductor light-emitting elements of group III nitride (1995) (0)
- Vapor phase epitaxial device composite semiconductors (1993) (0)
- Growth and properties of AlInN, AlN and related structures (2002) (0)
- On the nature of radiative recombination processes in GaN (1998) (0)
- Optical and Microwave Double Resonance of III-nitrides (1999) (0)
- Analysis of Metalorganic Vapor Phase Epitaxial Growth in GaInN Characterized by in Situ X-ray Diffraction( Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques) (2015) (0)
- The nature of magnesium precipitation in GaN and AlGaN deposited by epitaxial lateral overgrowth (2003) (0)
- Growth and characterization of AlGaN on annealed sputtering AlN layer (2017) (0)
- Growth of thick Al 0.6 Ga 0.4 N film on sputtered AlN with high temperature annealing formed on a-plane sapphire (2020) (0)
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy (1999) (0)
- Study on crystal growth of n-GaN for nanowire optical device using multiple-quantum-shell/tunnel junction (2020) (0)
- Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer (2016) (0)
- GaInN growth on ScAlMgO 4 substrate by MOVPE (2019) (0)
- Spectroscopy in polarized and piezoelectric AlGaInN heterostructures (1999) (0)
- UV/blue Light Emitting AlGaN/GaN Heterostrucutures (1993) (0)
- Homoepitaxial growth of AlN layers using by metalorganic vapor phase epitaxy on freestanding AlN substrate (2014) (0)
- Two-step crystal growth of GaN nanowire by MOVPE (2018) (0)
- Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors (2001) (0)
- Fabrication of GaInN/GaInP/GaAs/Ge 4-junction solar cell using wafer bonding technology (2017) (0)
- Determination of the Sb Occupation-Site in MOCVD-grown GaN 1-x Sb x using X-ray Absorption Fine-Structure Measurements (2016) (0)
- Optical Properties and Characterization of GaInN-based Multi-Quantum-Shell (MQS) 3D Light-Emitting Diode (2017) (0)
- Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate (2006) (0)
- Epitaxial Growth and Properties of AIxGal.xN by MOVPE (1986) (0)
- Optoelectronic Devices (I) (1972) (0)
- Mg acceptor activation in p-GaN of the structure with n-GaN surface (2012) (0)
- Fabrication and Evaluation of porous SiC (2016) (0)
- Temperature dependence of the nitride-based HFET structure photosensors (2016) (0)
- White LED in combination with bulk and porous fluorescent SiC (Conference Presentation) (2019) (0)
- Experimental Study on the Influence of Edge Surface to Speckle Noise of Optical Fiber (1993) (0)
- 5th Int. Conf. on Nitride Semiconductors (ICNS-5), Nara, Japan May 2003 (2003) (0)
- Photoluminescence of indium-doped zinc sulphide (1986) (0)
- Growth of Single Crystal Al_xGa_ N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy (1993) (0)
- MOCVD growth of n-GaN cap layer on MQS-LEDs (2019) (0)
- Low resistive GaN tunnel junctions grown by MOVPE (2017) (0)
- Nitride-based laser diodes using thick n-AlGaN layers (2000) (0)
- Study on emission wavelength control of GaInN multi-quantum-shell/GaN nanowire (2018) (0)
- Dislocation density dependence of strain relaxation in GaInN/GaN heterostructure (2014) (0)
- Control of surface plasmon resonance wavelength by double metal Ag / Au nanoparticles for high efficiency green LED (2019) (0)
- Review— Toyoda Gosei's History of R&D on Blue LEDs with Professor (2019) (0)
- Optical Study of AlGaN/GaN Multiple Quantum Well Structures Grown on Laterally Overgrown GaN Templates (2002) (0)
- Gallium nitride semiconductor Lumisneszenzdiode as well as methods for their preparation. (1988) (0)
- Crystal Growth of Column III Nitrides by OMVPE (1996) (0)
- High-concentration doping of donor and acceptor in fluorescent 4H-SiC by closed sublimation growth (2021) (0)
- Optical characteristics of AlGaN/AlN-MQW on annealed AlN layer (2016) (0)
- A 5 . 2 Raman and IR reflectance studies of AlGaN (1999) (0)
- Filamentation in InGaN quantum well lasers (2000) (0)
- A semiconductor light emitting device having an Al Ga N In compound and process for its preparation (1993) (0)
- Present and Future Nitride-Based Devices (2001) (0)
- Light confinement and electroconductivity dependence of AlN molar fraction in composition-graded p-AlGaN cladding layer for UVB-LD (2020) (0)
- Metalorganic Vapor Phase Epitaxial Growth of Nonpolar Al(Ga,In)N Films on Lattice‐Mismatched Substrates (2008) (0)
- Study on Electroluminescence Spectrum and Waveguide Loss of GaInN Multiple Quantum Well Lasers (1999) (0)
- Impact on electroluminescence of AlGaN-based deep-ultraviolet LED grown on macrosteps (part 2) (2017) (0)
- Study of a -plane GaInN quantum well structure growth on r -plane sapphire (2016) (0)
- Investigation of InGaN/GaN quantum well structures by photoluminescence and photoluminescence excitation spectroscopy (1999) (0)
- Optical properties and acceptor states in Mg doped GaN (2008) (0)
- Development of a gate-controlled AlGaN based UV sensor with the extremely high sensitivity (2020) (0)
- Compositional Inhomogeneity of InGaAsP/GaAs LPE Layer by Precision X-Ray Diffractometry (1984) (0)
- Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices (2006) (0)
- Effect of an AlN Buffer Layer on AlGaN/α-A1_2O_3 Heteroepitaxial Growth by MOVPE (1987) (0)
- Characterization of low dislocation density GaN grown on sapphire R-plane substrate (2005) (0)
- Picosecond spectroscopy of tunnelling and energy relaxation in double quantum well wires (1992) (0)
- Erratum: “High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers” [Appl. Phys. Lett. 69, 3390 (1996)] (1997) (0)
- Improved crystalline quality of nonpolar a-plane GaN grown on r-plane patterned sapphire substrate (Conference Presentation) (2018) (0)
- Local Structural Analysis around In atoms in Al 0.82 In 0.18 N Alloy by using X-ray Absorption Fine-Structure Measurements (2016) (0)
- Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors : Seeking Blue Emission (1997) (0)
- Electroluminescent semiconductor component-with gallium nitride and process for its manufacture (1980) (0)
- [JSAP Paper Award Speech] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors (2017) (0)
- Study on high boron and nitrogen co-doping in 6H-SiC single layer by closed sublimation growth (2018) (0)
- Mg incorporation in AlGaN layers on grooved sapphire substrates (2002) (0)
- Effect on GaN/Al_ Ga_ N and Al_ Ga_ N/Al_ Ga_ N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy (2000) (0)
- Structure of porous SiC produced by voltage controlled anodic oxidation (2017) (0)
- Microscopic Investigation of Al_ Ga_ N on Sapphire (1999) (0)
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_ As_yP_ (y<0.01)/(100) GaAs : Optical Properties of Condensed Matter (1988) (0)
- Plasmon enhanced green GaN light-emitting diodes - Invited paper. (2014) (0)
- Gallium nitride laser diode and method for its preparation (1995) (0)
- Low resistivity Ohmic contact V-based electrode contributed by using Si 3 N 4 for high AlN molar fraction n-type AlGaN (2016) (0)
- Voltage reduction of blue edge emitting LD with n-type conducting AlInN / AlGaN multiple cladding structure (2019) (0)
- Optical characteristics of c -plane AlGaN multiple-quantum-well light-emitting diode structure with macro-steps (2017) (0)
- Photoluminescence of Excitons in In x Ga 1 - x N/In y Ga 1 - y N Multiple Quantum Wells (2002) (0)
- Photoluminescence study of Si doped GaN/AlGaN multi quantum wells (2003) (0)
- High-quality Al{sub x}Ga{sub 1{minus}x}N using low temperature-interlayer and its application to UV detector[Ultraviolet] (2000) (0)
- Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy (2010) (0)
- An interview with Professor Isamu Akasaki of Meijo University,pioneer in the field of Semiconducting GaN(qallium nitride)and related devices (1998) (0)
- A semiconductor device based on gallium nitride, and process for preparing (1992) (0)
- Etch Patterns and Dislocation Etch Pits on Germanium with KI-I2 Redox System (1962) (0)
- Progress and Prospect of GaN-based Vertical-Cavity Surface-Emitting Lasers (2019) (0)
- Crystal growth and properties of column-III nitrides for short wavelength light emitters (1993) (0)
- 半導体成長用基板、エピタキシャル基板とそれを用いた半導体装置、および、エピタキシャル基板の製造方法 (2005) (0)
- Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes (2002) (0)
- Emission wavelength control of nanowire LEDs via controlling diameter and pitch (2020) (0)
- Feasibility study on limited area formation of GaN nanowires (2017) (0)
- Optical properties of GaInN/GaN heterostructures and quantum wells (1998) (0)
- Three-Method Hybrid Numerical Simulation for Surface-Plasmon-Enhanced GaInN-Based Light-Emitting Diodes with Metal-Embedded Nanostructures (2021) (0)
- A method for producing a ceramic coating and a coating provided with said vessel (1968) (0)
- High-speed high-quality epitaxial growth of N and B codoped 6H-SiC by closed sublimation method (2005) (0)
- Internal transitions of a deep level defect in GaN studied by photoluminescence and optically detected magnetic resonance (1999) (0)
- A giant interplanetary leap to Mars Lymphatic Filariasis (2014) (0)
- Fracture of Al_χGa_ N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors (2001) (0)
- Analysis of sub peak emission of UVB light emitting diodes including guide layers (2019) (0)
- Compositional inhomogeneity in buried structure of AlGaN. (2002) (0)
- 2015 has already been claimed as international year of light by United Nations (2016) (0)
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices (1988) (0)
- Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE (1989) (0)
- Photoluminescence study of Si doped GaN/GaN/Al0.07Ga0.93N multi quantum wells (2002) (0)
- Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO 3 (2017) (0)
- Epitaxial substrate of aluminum-gallium nitride-semiconductors and manufacturing processes for (1999) (0)
- Research on GaN MODFET(cid:213)s (1998) (0)
- A Supplement to “Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge” (1964) (0)
- Response characteristics of AlGaN/GaInN/GaN HFET-type visible photosensors (2019) (0)
- Effect on GaN/Al 0.17 Ga 0.83 N and Al 0.05 Ga 0.95 N/Al 0.17 Ga 0.83 N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy (2000) (0)
- Investigation of reduction of light absorption at p-side toward UV emitting devices (2017) (0)
- Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction (2021) (0)
- Simulation and fabrication of nitride-based moth-eye light-emitting diodes (2006) (0)
- Gallium nitride series semiconductor element and manufacture thereof (1991) (0)
- Analysis of the growth mechanism of semi-polar (10-11) plane GaInN on freestanding (10-11) GaN substrate (2016) (0)
- Photoluminescence Spectroscopy of the 0.88 eV Emission in Electron-Irradiated GaN (1999) (0)
- Structural and optical properties of group-III nitride based heterostructure (1997) (0)
- Carrier Localization in Gallium Nitride (1995) (0)
- MAGNETOOPTICAL INVESTIGATIONS ON ELECTRON IRRADIATED GAN (1999) (0)
- Improvement of emission characteristics in green LEDs using sputtered AlN buffer layer (2018) (0)
- Optical investigation of AlGaN/GaN quantum wells and superlattices (2004) (0)
- Wafer bonding technology for AlN-based nitride semiconductors (2017) (0)
- Characterization of UV-B AlGaN active layer on n-Al 0.6 Ga 0.4 N underlying layer with low dislocation density (2019) (0)
- Fabrication and characterization of nitride-based blue light-emitting diodes on moth-eye patterned sapphire substrate (MPSS) (2013) (0)
- Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate (2011) (0)
- Crystalline quality of sputtered AlN buffer layer on r -sapphire substrate and its annealing effects (2017) (0)
- Nitride-based tunnel junctions with graded GaInN layer (2016) (0)
- Strain evolution and phonons in AlN/GaN superlattices (2003) (0)
- Optimization of impurity profiles for reduction resistance of GaN tunnel junctions (2018) (0)
- Growth of High-Quality GaN on Metallic-ZrB2 by Metalorganic Vapor Phase Epitaxy (2002) (0)
- Characterization of local structures around In atoms in Ga1−xInx layers by fluorescence EXAFS measurements (2002) (0)
- OMVPE of Group III Nitrides (2001) (0)
- Structural characteristics of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps (1) (2019) (0)
- Experimental Studies of Impurity Doping in Vapor Growth of Ge (1964) (0)
- Theoretical investigation of nitride nanowire based edge-emitting laser (2016) (0)
- Gain switching of GaInN MQW laser diodes (2000) (0)
- ITO/Ga 2 O 3 multi-layer transparent electrodes for deep UV-LEDs (2016) (0)
- Crystal Growth and Optical Property of GaN Nanowire Cores and GaInN/GaN Multi-Quantum Shells Grown by Metalorganic Vapor Phase Epitaxy (2019) (0)
- Fabrication of AlGaN/GaInN/GaN HFET visible photosensors with short optical gate (2020) (0)
- Fabrication of Polarity-Inverted GaN by Surface-Activated Wafer Bonding and Silicon Removal (2018) (0)
- Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology (2019) (0)
- Study on electrode for p-type shell of multi-quantum-shell LED (2019) (0)
- Design of Deep UV Second Harmonic Generation Device with ZrO 2 /AlN Multilayer Waveguide (2018) (0)
- Growth of group III nitrides on various plane substrates (2004) (0)
- AlGaN-based UV-B laser diode using GRIN-SCH structure (2020) (0)
- A process for producing self-supporting semiconductor layers of Al¶x¶Ga¶y¶In¶1¶¶-¶¶x¶¶-¶¶y¶N and use of semiconductor layers (1995) (0)
- Characterization of AlGaN / GaN heterostructure by in-situ X-ray diffraction (2016) (0)
- The laser oscillation properties of the Si concentration in AlGaN multiple quantum well structure (2016) (0)
- Structural analysis of GaN-based multi-quantum wells on a single nanowire using an X-ray micro beam (2017) (0)
- Improvement of device performance in UV-B laser diodes (2021) (0)
- Experimental Study on The Production of Holographic Diffraction Grating Device (HDGD) and Its Diffraction Efficiency (1997) (0)
- Introduction To The Issue On Gan-based Lasers: Materials, Processing, And Device Issues (1998) (0)
- Piezoelectric Polarization Effects in GaInN/GaN Heterostructures and Some Consequences for Device Design (1999) (0)
- Thermal oxidation of AlInN by mist particle supply (2020) (0)
- Blue Light Semiconductor Lasers (1999) (0)
- On Receiving the Nobel Prize in Physics (2015) (0)
- Study on growth of p-GaN shell in nanowire-LED using core-shell structure (2019) (0)
- Study on low-temperature embedded growth over III-nitride nanowires (2016) (0)
- AlInN/GaN DBRs for long-wavelength GaN-based VCSELs (2018) (0)
- Holographic Pattern Measurement of Printed Circuit Board (PCB) Vibration due to Mounted Electromagnetic Relay Operation (Special Section of Letters Selected from the 1993 IEICE Spring Conference) (1993) (0)
- Seven days: 3–9 October 2014 (2014) (0)
- Effect of SiN surface passivation in AlGaN-based HFET type photosensors (2016) (0)
- Characterization of UV device using TMAH wet etching for mirror formation (2019) (0)
- Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth (2020) (0)
- Technological Status of LED Techniques-Application in Non Destructive Testing with Special Emphasis on Magnetic Particle, Penetrant, Visual and Thermographic Inspection (2016) (0)
- Improved crystalline quality of nonpolar a -plane GaN on r -plane Patterned Sapphire Substrate (2017) (0)
- Identification of a Ga-related intrinsic defect in as-grown Zn-doped GaN (2001) (0)
- Improved passivation depth of porous fluorescent 6H-SiC with Si/C faces using atomic layer deposition (2021) (0)
- Emission wavelength control of GaInN/GaN multi-quantum shells/nanowires grown by metalorganic vapor phase epitaxy (2021) (0)
- Filamentation and Fundamental-Mode Operation in InGaN Quantum Well Lasers (1999) (0)
- Chapter 3 – The Evolution of Nitride Semiconductors (2005) (0)
- Light emitting diode element and method for its production (2010) (0)
- In-Situ Rheed-Traxs Monitoring Alloy Composition of the Surface During RF-MBE Growth of GaInN and AIGaN (1997) (0)
- Investigation on the gain-switching of GaInN MQW laser diodes (2000) (0)
- Growth condition dependents of the emission wavelength in Core-Shell MQW nanowire (2016) (0)
- Group III nitrides grown on R-plane sapphire with different off-angle : Off-angle dependence (2004) (0)
- ResearchNitride Semiconductor Radiative recombination in In 0 . 15 Ga 0 . 85 N / GaN multiple quantum well structures (1999) (0)
- Effects of buffer layers in heteroepitaxy of gallium nitride (1999) (0)
- Photoluminescence of Excitons in n-Type In 0.11 Ga 0.89 N/In 0.01 Ga 0.99 N Multiple Quantum Wells (2001) (0)
- Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures (2002) (0)
- Space-charge effect on photogenerated-current and -voltage in III-nitride optoelectronic semiconductors (2021) (0)
- IQE and EQE of the nitride-based UV/DUV LEDs (2011) (0)
- MOVPE growth of GaN and AlxGa1-xN and their luminescence and electrical properties (1991) (0)
- MOVPE growth and structural characterizations of GaN nanowires and GaInN/GaN multi-quantum shells (2019) (0)
- Continuous Measurement of Damage Width of the Contact Surface by Digital Image Measurement System (1998) (0)
- Microstructure evolution in MOVPE-grown AlN/GaN superlattices with different periods (2004) (0)
- Erratum to: “Key inventions in the history of nitride-based blue LED and LD”: [J. Crystal Growth 300 (2007) 2–10] (2008) (0)
- Fabrication and Properties of AlGaN/GaInN Double Heterostructure Grown on 6H-SiC(0001) Si (1995) (0)
- Fluorescent and LED (2005) (0)
- Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE (1999) (0)
- Violet LED fabricated on R-plane sapphire (2004) (0)
- A9.3 O, C, and other unintentional impurities in GaN and related compounds (2003) (0)
- Fabrication a low-temperature grown p-side structure with GaInN tunnel junction and n-GaNSb (2016) (0)
- p-AlGaN with high hole concentration by polarization charges (2016) (0)
- Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy (2001) (0)
- Nitride-Based UV Lasers (2007) (0)
- The state of the art of group III nitride based light emitters (1994) (0)
- Raman Scattering in ZnS_xSe_ Alloys (1991) (0)
- [Young Scientist Presentation Award Speech] Micro cavity LEDs with n-type AlInN/GaN Distributed Bragg Reflectors (2016) (0)
- Experimental Study on the Application of Holography to Thermal Stress Evaluation of Luninarire Components (1994) (0)
- A Study on the Robustness and the Decomposition Mechanism of Encapsulation Resins Applying to Deep Ultra Violet LEDs (2016) (0)
- Investigation for high powered LED using GaN nanowire. (2017) (0)
- Lawrence Berkeley National Laboratory Recent Work Title Carrier Localization in Gallium Nitride Permalink (2013) (0)
- Structural Properties of Nitrides Grown by Omvpe on Sapphire Substrate (1997) (0)
- Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates (2021) (0)
- Fundamentals of the Nitride Based Laser Diode (1996) (0)
- Details of the improvement of crystalline quality of a-plane GaN using one-step lateral growth (2006) (0)
- Distinct Magnesium Incorporation Behavior in Laterally Grown AlGaN (2002) (0)
- Raman study of Ga 1-xAlxN solid solutions (1997) (0)
- Vibration Pattern Measurement of Miniature Electromagnetic Relay Mounted Printed Circuit Board by Stroboscopic Holography (1993) (0)
- The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells (2002) (0)
- Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge (1963) (0)
- Optimization of 2DEG concentration and the electrode in AlGaN/AlGaN-based UV photosensors (2017) (0)
- Continuous Measurement of Contact Resistance of Electrical Sliding Contact for Light Appliances (1997) (0)
- Enhanced penetration depth of surface passivation in porous fluorescent 6H-SiC with Si/C-faces (2021) (0)
- 2nd JSAP Outstanding Achievement Award : Research Accomplishments (2002) (0)
- UV light emitting device grown on AlGaN with low-dislocation density (2003) (0)
- Growth of nitride nanowires and quantum-shell structures, and their application to photonic devices (2016) (0)
- Optical characterization of AlGaN based current injection type UV-B laser diode (2020) (0)
- Device characterization of nanowire-LED using multiple-quantum-shell/tunnel junction (2020) (0)
- A process for the production of sapphire loose semiconductors of a group III nitride compound semiconductor and prepared by this method (1995) (0)
- AlGaN/AlGaN-based extremely high-photosensitive solar-blind sensor (2017) (0)
- Aperture diameter dependences in GaN-based vertical-cavity surface-emitting lasers with nano-height cylindrical waveguide formed by BCl3 dry etching (2020) (0)
- Fabrication a low-temperature-grown p-side structure LED with tunnel junction (2017) (0)
- MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate (2012) (0)
- Status and Prospects of High-Efficiency GaN Vertical-Cavity Surface-Emitting Lasers (2018) (0)
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