By AI Staff

Arthur Gossard holds the titles of Professor Emeritus and Research Professor in Materials and Electrical & Computer Engineering at the University of California, Santa Barbara. Gossard earned his B.A. at Harvard University, and his Ph.D. at the University of California, Berkeley.

Gossard did his most influential work at Bell Laboratories. His work is most focused in molecular beam epitaxy, which relates to the growth of artificially structured materials. Essentially, this method is used to to “grow” thin-film crystal layers for the fabrication of semiconductor devices (the “guts” of all modern technologies). In particular, Gossard’s research has been fundamental in developing the methods used for developing nanotechnology. Additionally, he is co-discoverer of the Quantum Confined Stark Effect and the Fractal Quantum Hall Effect.

For his work, Gossard has received awards and honors including the National Medal of Technology and Innovation, the AAAA Newcomb Cleveland Prize, fellowship with the Electron Devices Society, and induction into the National Academy of Engineering, as well as the National Academy of Sciences.

**Featured in Top Influential Engineers Today**

According to Wikipedia, Arthur C. Gossard is a professor of materials and electrical engineering at the University of California, Santa Barbara. In 1982, he co-discovered the fractional quantum Hall effect. His research is related to molecular beam epitaxy . He has a doctorate in physics from UC Berkeley. After university, he joined Bell Labs.

- Two-Dimensional Magnetotransport in the Extreme Quantum Limit
- Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
- Observation of the Spin Hall Effect in Semiconductors
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
- Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
- Active terahertz metamaterial devices
- Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors.
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation
- Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device
- Energy-gap discontinuities and effective masses for G a A s − Al x Ga 1 − x As quantum wells
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
- Toward quantum well wires: Fabrication and optical properties
- Tunable, continuous-wave Terahertz photomixer sources and applications
- Triplet–singlet spin relaxation via nuclei in a double quantum dot
- Macroscopically ordered state in an exciton system
- Optical bistability in semiconductors
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure
- Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
- Coherent spin manipulation without magnetic fields in strained semiconductors
- Optical characterization of interface disorder in GaAs-Ga1-xAlxAs multi-quantum well structures
- Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
- Manipulation of a single charge in a double quantum dot.
- Observation of the excited level of excitons in GaAs quantum wells
- Towards Bose–Einstein condensation of excitons in potential traps
- Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases
- Gate-controlled spin-orbit quantum interference effects in lateral transport.
- Coherent branched flow in a two-dimensional electron gas
- Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
- Counting statistics of single electron transport in a quantum dot.
- Demonstration of electron filtering to increase the Seebeck coefficient in In0.53Ga0.47As/In0.53Ga0.28Al0.19As superlattices
- Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
- Current-induced spin polarization in strained semiconductors.
- High performance continuous wave 1.3 μm quantum dot lasers on silicon
- Observation of folded acoustic phonons in a semiconductor superlattice
- Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers
- Tunable Nonlocal Spin Control in a Coupled-Quantum Dot System
- Electrical control of spin coherence in semiconductor nanostructures
- Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices.
- Selective Transmission of High-Frequency Phonons by a Superlattice: The
- Energy structure and quantized Hall effect of two-dimensional holes
- X‐ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayers
- Active Terahertz Metamaterial Devices
- Tunneling induced transparency: Fano interference in intersubband transitions
- Quantum coherence in a one-electron semiconductor charge qubit.
- 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
- The Coulomb Blockade in Coupled Quantum Dots
- Room‐temperature excitonic optical bistability in a GaAs‐GaAlAs superlattice étalon
- Luminescence studies of optically pumped quantum wells in GaAs- Al x Ga 1 − x As multilayer structures
- Dislocation scattering in a two-dimensional electron gas
- Control of Exciton Fluxes in an Excitonic Integrated Circuit
- Magnetic and some thermal properties of chalcogenides of Pr and Tm and a few other rare earths
- Plasma dispersion in a layered electron gas: A determination in GaAs-(AlGa) As heterostructures
- Rapid single-shot measurement of a singlet-triplet qubit.
- Fast single-charge sensing with a rf quantum point contact
- Gigahertz Electron Spin Manipulation Using Voltage-Controlled g-Tensor Modulation
- Coulomb-modified Fano resonance in a one-lead quantum dot.
- Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures
- Dimerization of a linear Heisenberg chain in the insulating phases of V 1-x Cr x O 2
- Extrinsic photoluminescence from GaAs quantum wells
- Spontaneous coherence in a cold exciton gas
- Study of electron traps in n‐GaAs grown by molecular beam epitaxy
- Accurate modeling of dual dipole and slot elements used with photomixers for coherent terahertz output power
- Electrical control of spin relaxation in a quantum dot.
- Observation of intersubband scattering in a 2-dimensional electron system
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs
- Room temperature lasing from InGaAs quantum dots
- Dissipation and Dynamic Nonlinear Behavior in the Quantum Hall Regime
- Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces
- Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot
- Suppressing Spin Qubit Dephasing by Nuclear State Preparation
- Self-consistent measurement and state tomography of an exchange-only spin qubit.
- Resistance standard using quantization of the Hall resistance of GaAs‐AlxGa1−xAs heterostructures
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
- Nuclear Resonance in Ferromagnetic Cobalt
- Stimulated scattering of indirect excitons in coupled quantum wells: signature of a degenerate Bose-gas of excitons.
- Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
- Comparison of the 3ω method and time-domain thermoreflectance for measurements of the cross-plane thermal conductivity of epitaxial semiconductors
- Free carrier and many-body effects in absorption spectra of modulation-doped quantum wells
- A Coherent Beam Splitter for Electronic Spin States
- (Ga,Mn)As as a digital ferromagnetic heterostructure
- Multiple quantum well reflection modulator
- Cryogenic Control Architecture for Large-Scale Quantum Computing
- Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices
- Coherent spin manipulation in an exchange-only qubit
- Dispersive readout of a few-electron double quantum dot with fast RF gate sensors.
- Biexcitons in GaAs quantum wells
- Epitaxial structures with alternate‐atomic‐layer composition modulation
- Fast Sensing of Double-Dot Charge Arrangement and Spin State with a Radio-Frequency Sensor Quantum Dot
- ErAs:GaAs photomixer with two-decade tunability and 12μW peak output power
- 131 ps optical modulation in semiconductor multiple quantum wells (MQW's)
- Quantum-dot-based resonant exchange qubit.
- Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
- Fractional Quantization of the Hall Effect
- Two-dimensional electron gas at a semiconductor-semiconductor interface
- CRYOGENIC SCANNING PROBE CHARACTERIZATION OF SEMICONDUCTOR NANOSTRUCTURES
- The Fractional Quantum Hall Effect
- Resonant Rayleigh Scattering from an Inhomogeneously Broadened Transition: A New Probe of the Homogeneous Linewidth
- Hybrid metamaterials enable fast electrical modulation of freely propagating terahertz waves
- Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides
- Differential charge sensing and charge delocalization in a tunable double quantum dot.
- GaAs-AlAs monolithic microresonater arrays
- Cotunneling spectroscopy in few-electron quantum dots.
- Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures
- Hyperfine-mediated gate-driven electron spin resonance.
- Highly anisotropic optical properties of single quantum well waveguides
- New Quantum Structures
- Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
- Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles
- Role of Conduction Electrons in Electric-Field Gradients of Ordered Metals
- Effect of nanoparticle scattering on thermoelectric power factor
- Interface roughness and alloy‐disorder scattering contributions to intersubband transition linewidths
- Suppression of spin relaxation in submicron InGaAs wires.
- GaAs structures with electron mobility of 5×106 cm2/V s
- OBSERVATION OF NUCLEAR RESONANCE IN A FERROMAGNET
- Strong polarization-sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides
- Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays.
- Electrically pumped continuous wave 1.3 µm quantum dot lasers epitaxially grown on on-axis (001) Si
- Spin-polarized Zener tunneling in (Ga,Mn)As
- Charge injection transistor based on real-space hot-electron transfer
- Imaging magnetic focusing of coherent electron waves
- 3‐pJ, 82‐MHz optical logic gates in a room‐temperature GaAs‐AlGaAs multiple‐quantum‐well étalon
- Quantum-well resonant tunneling bipolar transistor operating at room temperature
- Scaling of dynamical decoupling for spin qubits.
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxy: I. Growth on singular (100)GaAs substrates
- Quantized Hall effect at low temperatures
- Effect of Inversion Symmetry on the Band Structure of Semiconductor Heterostructures
- Picosecond dynamics of hot carrier relaxation in highly excited multi-quantum well structures
- Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System
- Time-resolved detection of individual electrons in a quantum dot
- Optical Vibrational Modes and Electron-Phonon Interaction in GaAs Quantum Wells
- Statistics of Coulomb Blockade Peak Spacings
- Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers
- Optical processes of 2D electron plasma in GaAs-(AlGa)As heterostructures
- Frequency-selective single-photon detection using a double quantum dot.
- Measurements of room‐temperature band‐gap‐resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs
- Electron counting in quantum dots
- Triple quantum dot charging rectifier
- Optimum emitter grading for heterojunction bipolar transistors
- Determination of the Fine-Structure Constant Using GaAs-Al x Ga 1-x As Heterostructures
- KNIGHT SHIFTS AND SUSCEPTIBILITIES OF TRANSITION METALS: PALLADIUM
- Passive mode locking of a semiconductor diode laser.
- Alloy Clustering inGa1−xAlxAsCompound Semiconductors Grown by Molecular Beam Epitaxy
- Right sizes of nano- and microstructures for high-performance and rigid bulk thermoelectrics
- Generating spin currents in semiconductors with the spin Hall effect.
- A traveling-wave THz photomixer based on angle-tuned phase matching
- Orbital Paramagnetism and the Knight Shift of D-Band Superconductors
- Quantum dot lasers for silicon photonics [Invited]
- 1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si
- 100 ps waveguide multiple quantum well (MQW) optical modulator with 10:1 on/off ratio
- Interlaced dynamical decoupling and coherent operation of a singlet-triplet qubit.
- Superconductivity of Nb3Al
- Integrated quantum well self-electro-optic effect device: 2 × 2 array of optically bistable switches
- Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.
- Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon
- Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices
- Dynamic nuclear polarization with single electron spins.
- Observation of intersubband excitations in a multilayer two dimensional electron gas
- Spin-orbit coupling, antilocalization, and parallel magnetic fields in quantum dots.
- $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
- Ferromagnetic Imprinting of Nuclear Spins in Semiconductors
- High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si
- Counting statistics and super-Poissonian noise in a quantum dot: Time-resolved measurements of elect
- High efficiency semimetal/semiconductor nanocomposite thermoelectric materials
- Delocalized excitons in semiconductor heterostructures
- Degenerate four‐wave mixing in room‐temperature GaAs/GaAlAs multiple quantum well structures
- High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates
- Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs∕InGaAlAs superlattices
- Regenerative pulsations from an intrinsic bistable optical device
- Optical bistability due to increasing absorption.
- Fast nonlinear optical response from proton‐bombarded multiple quantum well structures
- New rectifying semiconductor structure by molecular beam epitaxy
- Raman scattering resonant with quasi-two-dimensional excitons in semiconductor quantum cells
- Zero-resistance state of two-dimensional electrons in a quantizing magnetic field
- Formation mechanism and low-temperature instability of exciton rings.
- An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier
- Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.
- Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency
- Observation of the Unconventional Photon Blockade.
- Observation of resonant tunneling through a compositionally graded parabolic quantum well
- Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs
- Bipolar transistor with graded band-gap base
- Lasing characteristics of GaAs microresonators
- An improved model for non-resonant terahertz detection in field-effect transistors
- Spin and polarized current from Coulomb blockaded quantum dots.
- Observation of oscillatory linewidth in the cyclotron resonance of GaAs-AlxGa1−xAs heterostructures
- Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures
- Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm
- Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction
- NMR measurements of the flux distribution in type II superconductors
- Condensation of excitons in a trap.
- Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
- Temperature dependence of the quantum Hall resistance
- GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy
- High power terahertz generation using 1550 nm plasmonic photomixers
- Electrostatic conveyer for excitons
- Hot electrons in modulation-doped GaAs-AlGaAs heterostructures
- Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers
- Nanomechanical displacement sensing using a quantum point contact
- Intersubband spectroscopy of two dimensional electron gases: Coulomb interactions
- Dependence of the structural and optical properties of GaAs‐Ga1−xAlxAs multiquantum‐well structures on growth temperature
- Raman scattering in superlattices: Anisotropy of polar phonons
- Imaging a single-electron quantum dot.
- Reducing thermal conductivity of crystalline solids at high temperature using embedded nanostructures.
- Excitonic switches operating at around 100 K
- Spin accumulation in forward-biased MnAs/GaAs Schottky diodes.
- Excitons in electrostatic traps
- Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As
- Structural and optical characterization of InAs/InGaAs self‐assembled quantum dots grown on (311)B GaAs
- Strongly capacitively coupled quantum dots
- Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation
- Excitation spectrum of two correlated electrons in a lateral quantum dot with negligible Zeeman splitting.
- 1550 nm ErAs:In(Al)GaAs large area photoconductive emitters
- Electronic structure and conduction in a metal–semiconductor digital composite: ErAs:InGaAs
- Ultrafast photoresponse at 1.55 μm in InGaAs with embedded semimetallic ErAs nanoparticles
- Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well.
- Tunable noise cross correlations in a double quantum dot.
- Resonant-optical-cavity photoconductive switch with 0.5% conversion efficiency and 1.0 W peak power.
- Photon‐assisted tunneling in a resonant tunneling diode: Stimulated emission and absorption in the THz range
- Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction
- Fast electrical control of single electron spins in quantum dots with vanishing influence from nuclear spins.
- Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers
- Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
- Dissipation-driven superconductor-insulator transition in a two-dimensional josephson-junction array
- Saturation of the free exciton resonance in GaAs
- Photoluminescence kinetics of indirect excitons in GaAs/Al x Ga 1-x As coupled quantum wells
- Measurement of temporal correlations of the overhauser field in a double quantum dot.
- Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
- Observation of magnetically induced effective-mass enhancement of quasi-2D excitons.
- Coherence length of cold exciton gases in coupled quantum wells.
- THz-photomixer based on quasi-ballistic transport
- Exciton optoelectronic transistor.
- High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity
- Spontaneous spin coherence in n -GaAs produced by ferromagnetic proximity polarization
- Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy
- Dephasing in Open Quantum Dots
- Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot
- Frequency multiplexing for readout of spin qubits
- Ultralow resistance in situ Ohmic contacts to InGaAs/InP
- Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlattices
- Paramagnetic Relaxation of Manganese in Copper Metal
- Observation of cyclotron resonance in the photoconductivity of two-dimensional electrons
- Cotunneling-mediated transport through excited states in the Coulomb-blockade regime.
- Landau-Zener-Stückelberg interferometry of a single electron charge qubit
- Remotely-doped graded potential well structures
- GaAs/AlAs layered films
- A field-effect transistor with a negative differential resistance
- Orbital Paramagnetism and the Knight Shift in Transition Metal Superconductors
- Trapping of cold excitons in quantum well structures with laser light.
- Nonequilibrium fluctuation relations in a quantum coherent conductor.
- Cross-plane Seebeck coefficient of ErAs:InGaAs∕InGaAlAs superlattices
- Cross-plane Seebeck coefficient and Lorenz number in superlattices
- Localization-delocalization transition of indirect excitons in lateral electrostatic lattices.
- Low resistance, nonalloyed Ohmic contacts to InGaAs
- Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
- From spatially indirect excitons to momentum-space indirect excitons by an in-plane magnetic field
- Spin currents in a coherent exciton gas.
- MAGNETO-OPTICS OF THE SPATIALLY SEPARATED ELECTRON AND HOLE LAYERS IN GAAS/ALXGA1-XAS COUPLED QUANTUM WELLS
- Modulation‐doped field‐effect transistor based on a two‐dimensional hole gas
- Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs
- Absorption, refractive index, and birefringence of AlAs‐GaAs monolayers
- Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells
- Femtosecond excitonic optoelectronics
- Transverse modes, waveguide dispersion, and 30 ps recovery in submicron GaAs/AlAs microresonators
- High speed absorption recovery in quantum well diodes by diffusive electrical conduction
- Probing the Kondo density of states in a three-terminal quantum ring.
- Cyclotron and plasmon emission from two-dimensional electrons in GaAs
- A Review of High-Performance Quantum Dot Lasers on Silicon
- Electrically tunable Fabry–Perot mirror using multiple quantum well index modulation
- Mobility of the two‐dimensional electron gas in GaAs‐AlxGa1−xAs heterostructures
- Microscopic magnetic properties of vanadium oxides. II.V3O5,V5O9,V6O11, andV6O13
- Charge-state conditional operation of a spin qubit.
- Optical modulation by optical tuning of a cavity
- Luminescence properties of GaAs‐Ga1−x Alx As double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy
- Energy-dependent tunneling in a quantum dot.
- Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates
- Summary Abstract: Optical characterization of interface disorder in multiquantum well GaAs–AlxGa1−xAs superlattice structures
- Magnetic Properties of Dilute Gold-Vanadium Alloys: Nuclear Magnetic Resonance in AuV and Au(Ag)V
- Zero-field optical manipulation of magnetic ions in semiconductors.
- Magnetic field symmetry and phase rigidity of the nonlinear conductance in a ring.
- Magnetization measurements of magnetic two-dimensional electron gases.
- Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN
- GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy
- Observation of the deHaas–van Alphen effect in a two‐dimensional electron system
- Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands
- Excitonic switches operating at around 100 K
- Laser oscillation with optically pumped very thin GaAs‐AlxGa1−xAs multilayer structures and conventional double heterostructures
- Effect of exchange interaction on spin dephasing in a double quantum dot.
- Antiferromagnetic s-d exchange coupling in GaMnAs.
- Magnetization measurements on a two-dimensional electron system
- Interface structure and optical properties of quantum wells and quantum boxes
- Bound and virtual bound states in semiconductor quantum wells
- Plasmonics enhanced photomixing for generating quasi-continuous-wave frequency-tunable terahertz radiation.
- Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors
- INTEGRATED MICROMECHANICAL CANTILEVER MAGNETOMETRY OF GA1-XMNXAS
- Taper couplers for GaAs−AlxGa1−xAs waveguide layers produced by liquid phase and molecular beam epitaxy
- Understanding Materials Science: History, Properties, Applications
- Ferromagnetic Nuclear Resonance of Single-Domain Cobalt Particles
- Origin of the inner ring in photoluminescence patterns of quantum well excitons
- Coupled whispering gallery mode resonators in the Terahertz frequency range.
- Bound excitons in p-doped GaAs quantum wells
- Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs
- Optical-level shifter and self-linearized optical modulator using a quantum-well self-electro-optic effect device.
- Growth of microstructures by molecular beam epitaxy
- Stability of spin states in quantum dots
- Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity
- The effect of lateral leakage current on the experimental gain/current-density curve in quantum-well ridge-waveguide lasers
- Counting statistics of single electron transport in a quantum dot.
- Hysteresis and Spin Transitions in the Fractional Quantum Hall Effect
- Optical birefringence of ultrathin AlxGa1−xAs‐GaAs multilayer heterostructures
- Impact of fabrication non-uniformity on chip-scale silicon photonic integrated circuits
- Weak localization of two-dimensional electrons in GaAs-Al x Ga 1-x As heterostructures
- Electrically tunable spin polarization in III-V quantum wells with a ferromagnetic barrier
- Conductance fluctuations and quantum chaotic scattering in semiconductor microstructures.
- Light Scattering by Photoexcited Two-Dimensional Electron Plasma in GaAs-(AlGa) As Heterostructures
- Temperature of quasi‐two‐dimensional electron gases under steady‐state terahertz drive
- Growth and microstructure of self-assembled ErAs islands in GaAs
- Electron Transport in III–V Nitride Two‐Dimensional Electron Gases
- Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers
- Observation of Chiral Surface States in the Integer Quantum Hall Effect
- Imaging and magnetometry of switching in nanometer‐scale iron particles
- Trapping indirect excitons in a GaAs quantum-well structure with a diamond-shaped electrostatic trap.
- Microscopic magnetic properties of metallic and insulating V 4 O 7 and V 7 O 13
- Field gradient induced by organic intercalation of superconducting layered dichalcogenides
- Experimental Test of the Spin-Wave Theory of a Ferromagnet
- 1.55μm ultrafast photoconductive switches based on ErAs:InGaAs
- Canted antiferromagnetic phase in a double quantum well in a tilted quantizing magnetic field.
- Phonon localization in heat conduction
- g-Factor enhancement in the 2D electron gas in GaAs/AlGaAs heterojunctions
- Record Ion (0.50 mA/µm at VDD = 0.5 V and Ioff = 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs
- Spatial light modulator and optical dynamic memory using a 6 x 6 array of self-electro-optic-effect devices.
- Speed and effectiveness of windowless GaAs étalons as optical logic gates
- 1550-nm Driven ErAs:In(Al)GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth
- Noise correlations in a Coulomb-blockaded quantum dot.
- Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers
- Absence of Antiferromagnetism in NbSe2 and TaSe2
- Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation
- Magnetophonon resonances of the two-dimensional electron gas in GaAs/AlGaAs heterostructures
- Two‐dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interface
- Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
- GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing
- Robust micromagnet design for fast electrical manipulations of single spins in quantum dots
- Optically controlled excitonic transistor
- Nonadiabatic quantum control of a semiconductor charge qubit
- Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm
- Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channe
- Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates.
- Time-resolved Dynamics of the Spin Hall Effect
- Molecular Beam Epitaxy of Superlattices in Thin Films
- Room-temperature electro-optic up-conversion via internal photoemission
- Asymmetry of nonlinear transport and electron interactions in quantum dots.
- All-optical excitonic transistor.
- Tunable all epitaxial semimetal-semiconductor schottky diode system : ErAs on InAlGaAs
- Time-resolved detection of single-electron interference.
- Ultrafast optical control of terahertz surface plasmons in subwavelength hole arrays at room temperature
- High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer
- Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs.
- Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As
- Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structures
- Effect of Nanoparticles on Electron and Thermoelectric Transport
- Continuous-Wave Sub-THz Photonic Generation With Ultra-Narrow Linewidth, Ultra-High Resolution, Full Frequency Range Coverage and High Long-Term Frequency Stability
- External off and on switching of a bistable optical device
- Effect of hole-hole scattering on the conductivity of the two-component 2D hole gas in GaAs/(AlGa)As heterostructures
- Transport properties of GaAs‐AlxGa1−x As heterojunction field‐effect transistors
- Nonlinear optics with a diode-laser light source.
- A study of intersubband scattering in GaAs/AlxGa1−xAs heterostructures by means of a parallel magnetic field
- Some effects of a longitudinal electric field on the photoluminescence of p‐doped GaAs‐AlxGa1−xAs quantum well heterostructures
- Measurement of the tip-induced potential in scanning gate experiments
- Use of a diode laser to observe room‐temperature, low‐power optical bistability in a GaAs‐AlGaAs etalon
- Phase Diagram of Degenerate Exciton Systems
- 1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon.
- ErAs :InGaAs/InGaAlAs superlattice thin-film power generator array
- WAVE FUNCTION SPECTROSCOPY IN QUANTUM WELLS WITH TUNABLE ELECTRON DENSITY
- MBE growth and energy levels of quantum wells with special shapes
- A reflection high-energy electron diffraction study of (100) GaAs vicinal surfaces
- Carrier dynamics in InGaAs with embedded ErAs nanoislands
- Zero resistance state and origin of the quantized Hall effect in two-dimensional electron systems
- Local manipulation of nuclear spin in a semiconductor quantum well
- Valence band mixing in GaAs-(AlGa)As heterostructures
- Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data
- ErAs:(InGaAs)1−x(InAlAs)x alloy power generator modules
- Ytterbium NMR:Yb 171 Nuclear Moment and Yb Metal Knight Shift
- Quantum Hall effect in wide parabolic GaAs/AlxGa1-xAs wells.
- Spectroscopy of Landau transitions of two-dimensional electron gases
- Raman scattering and zone‐folding effects for alternating monolayers of GaAs‐AlAs
- Ultra sensitive ErAs/InAlGaAs direct detectors for millimeter wave and THz imaging applications
- MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon
- Determination of tilted superlattice structure by atomic force microscopy
- Semimetal/semiconductor nanocomposites for thermoelectrics.
- Picosecond time‐of‐flight measurements of minority electrons in GaAs/AlGaAs quantum well structures
- A fiber coupled cavity QED source of identical single photons
- Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry-Perot structures
- InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
- Relaxation and readout visibility of a singlet-triplet qubit in an Overhauser field gradient
- Advances in schottky rectifier performance
- Dipole scattering in polarization induced III–V nitride two-dimensional electron gases
- Picosecond dynamics of highly excited multiquantum well structures
- Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors
- Thermoelectric figure of merit of (In0.53Ga0.47As)0.8(In0.52Al0.48As)0.2 III-V semiconductor alloys
- Spectroscopy of two-dimensional hole gases in GaAs-(AlGa)As heterostructures
- An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier
- Far-infrared photoresponse of the InAs/GaInSb superlattice
- Dynamics of inter-landau-level excitations of a two-dimensional electron gas in the quantum Hall regime.
- Direct measurement of thin-film thermoelectric figure of merit
- Growth of beryllium doped AlxGa1−xAs/GaAs mirrors for vertical‐cavity surface‐emitting lasers
- REDUCED THERMAL CONDUCTIVITY IN LOW-TEMPERATURE-GROWN GAAS
- Complementary p-MODFET and n-HB MESFET (Al,Ga)As transistors
- Dissipation of intersubband plasmons in wide quantum wells.
- Study of a Series of Nb 3 X Compounds by Nuclear Magnetic Resonance
- Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrix
- Picosecond luminescence measurements of hot carrier relaxation in III–V semiconductors using sum frequency generation
- Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors
- Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability
- Exchange control of nuclear spin diffusion in a double quantum dot.
- Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals.
- Far‐infrared pump‐probe measurements of the intersubband lifetime in an AlGaAs/GaAs coupled‐quantum well
- Backside-gated modulation-doped GaAs-(AlGa)As heterojunction interface
- Coherent operations and screening in multielectron spin qubits.
- Two‐wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wells
- Resonant degenerate four‐wave mixing in GaAs multiquantum well structures
- Silver-epoxy microwave filters and thermalizers for millikelvin experiments
- Far‐infrared emission from parabolically graded quantum wells
- Dimensionally constrained D'yakonov–Perel' spin relaxation in n-InGaAs channels: transition from 2D to 1D
- Room temperature, THz photomixing sweep oscillator and its application to spectroscopic transmission through organic materials
- Imaging interedge-state scattering centers in the quantum Hall regime
- Indirect excitons in elevated traps.
- Step‐flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices
- O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si.
- NUCLEAR MAGNETIC RESONANCE IN UAl$sub 2$
- Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources
- Direct measurement of dispersive nonlinearities in GaAs
- Direct measurement of the destruction of charge quantization in a single-electron box
- Statistical electron excitation in a double quantum dot induced by two independent quantum point contacts
- Terahertz Detection by a Homodyne Field Effect Transistor Multiplicative Mixer
- Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm
- Fluctuation theorem and microreversibility in a quantum coherent conductor
- Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages
- Spin transfer and coherence in coupled quantum wells
- Imaging electron density in a two-dimensional electron gas
- Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers
- 490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si
- Temperature dependence of far-infrared electroluminescence in parabolic quantum wells
- Strain‐sensing cryogenic field‐effect transistor for integrated strain detection in GaAs/AlGaAs microelectromechanical systems
- Dynamical birefringence: Electron-hole recollisions as probes of Berry curvature
- High‐efficiency and low‐threshold InGaAs/AlGaAs quantum‐well lasers
- Quantum Hall effect transition in scanning gate experiments
- Thermoelectric power generator module of 16×16 Bi2Te3 and 0.6% ErAs:(InGaAs)1−x(InAlAs)x segmented elements
- Classical hall effect in scanning gate experiments
- Imaging coherent electron flow
- Imaging Electron Interferometer
- Spin-dependent tunneling of single electrons into an empty quantum dot
- Electromagnetic Metamaterials for Terahertz Applications
- GaAs-AlAs Monolithic Microresonator Arrays
- Controlling electronic properties of epitaxial nanocomposites of dissimilar materials
- Electronic dephasing in the quantum Hall regime
- Femtosecond luminescence measurements in GaAs
- Subpicosecond excitonic electroabsorption in room-temperature quantum wells
- Electric‐field‐induced absorption changes in triangular quantum wells grown by pulsed‐beam molecular‐beam‐epitaxy technique
- Conduction-band formation in metal layers intercalated in TaS 2 : Nuclear resonance of Sn, Hg, and Pb in TaS 2
- Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures
- Collector/emitter offset voltage in double-heterojunction bipolar transistors
- Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon.
- Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon.
- Pattern formation in the exciton inner ring
- Mesoscopic Fluctuations of Elastic Cotunneling in Coulomb Blockaded Quantum Dots
- Multiple layer local oxidation for fabricating semiconductor nanostructures
- A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots
- Coulomb correlations in a two-dimensional electron gas in large magnetic fields
- Nonlinear quantum dynamics in semiconductor quantum wells
- Spacer-dependent transport and magnetic properties of digital ferromagnetic heterostructures
- Optical detection of resonant tunnelling of electrons in quantum wells
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
- Observation of arsenic precipitates in GaInAs grown at low temperature on InP
- Spin transport of excitons.
- Kinetics of the inner ring in the exciton emission pattern in coupled GaAs quantum wells
- Capacitively coupled quantum dots as a single-electron switch
- Coherent adiabatic spin control in the presence of charge noise using tailored pulses.
- Point Contact Conductance of an Open Resonator
- Negative absolute mobility of holes in n‐doped GaAs quantum wells
- Anomalous Hall effect in ferromagnetic semiconductors with hopping transport
- Toward a 1550 nm InGaAs photoconductive switch for terahertz generation.
- OPTICAL RESPONSE OF GRATING-COUPLER-INDUCED INTERSUBBAND RESONANCES: THE ROLE OF WOOD'S ANOMALIES
- Electron spin interferometry using a semiconductor ring structure
- FABRICATION AND CHARACTERIZATION OF 100-NM-THICK GAAS CANTILEVERS
- Mode spectroscopy and level coupling in ballistic electron waveguides
- Hot‐electron memory effect in double‐layered heterostructures
- Water Freezes Differently on Positively and Negatively Charged Surfaces of Pyroelectric Materials
- Microwave generation in NERFET
- Ex situ Ohmic contacts to n-InGaAs
- High-Pressure Nuclear Resonance Study of the Metal-Insulator Transition of V 2 O 3
- Two-dimensional electrostatic lattices for indirect excitons
- Dynamic response of parabolically confined electron systems
- Base transport dynamics in a heterojunction bipolar transistor
- Near-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAs
- Continuous-wave 1550 nm operated terahertz system using ErAs:In(Al)GaAs photo-conductors with 52 dB dynamic range at 1 THz
- Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$
- Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites
- Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves
- Purification of a single-photon nonlinearity
- Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
- Phonon freedom and confinement in GaAsAlxGa1−xAs superlattices
- Voltage control of nuclear spin in ferromagnetic Schottky diodes
- Quantum chaos in open versus closed quantum dots: Signatures of interacting particles
- 5.5 GHz multiple quantum well reflection modulator
- Transport of indirect excitons in a potential energy gradient
- Photon storage with nanosecond switching in coupled quantum well nanostructures.
- Parallel operation and crosstalk measurements in GaAs étalon optical logic devices
- Two-stage Kondo effect in a four-electron artificial atom
- Quantum well resonant tunneling bipolar transistor operating at room temperature
- High-speed 2 × 2 electrically driven spatial light modulator made with GaAs/AlGaAs multiple quantum wells(MQWs)
- High doping effects on in-situ Ohmic contacts to n-InAs
- Observation of impurity effects on the nucleation of arsenic precipitates in GaAs
- Thermal imaging of wafer temperature in MBE using a digital camera
- Few-electron double quantum dots
- Self-assembled ErAs islands in GaAs for THz applications
- Coulomb-blockade spectroscopy on a small quantum dot in a parallel magnetic field
- Far infrared emission from 2D electrons at the GaAsAlxGa1-xAs interface
- Charging and Spin Effects in Triple Dot Artificial Molecules
- Fractional quantum hall effect in extremely high mobility GaAs/(AlGa)As heterostructures
- Disorder and the fractional quantum Hall effect
- Infrared surface plasmon resonances due to Er-V semimetallic nanoparticles in III-V semiconductor matrices
- Effect of low-temperature structural transformation on /sup 51/V Knight shifts and electric field gradients in V/sub 3/Si
- Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors.
- Temperature‐dependent threshold and modulation characteristics in InGaAs/GaAs quantum‐well ridge‐waveguide lasers
- The Importance of p-Doping for Quantum Dot Laser on Silicon Performance
- Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers
- A reflection high‐energy electron diffraction study of AlAs/GaAs tilted superlattice growth by migration‐enhanced epitaxy
- Temperature dependence of electron mobility inGaAs−AlxGa1−xAsheterostructures from 1 to 10 K
- Drift and diffusion of spins generated by the spin Hall effect
- Growth-temperature dependence of the microstructure of ErAs islands in GaAs
- Light scattering spectroscopy of electrons in GaAs–(AlGa)As heterostructures: Correlation with transport properties
- MBE growth of tilted superlattices: advances and novel structures
- Submilliampere-threshold InGaAs-GaAs quantum-well ridge-waveguide lasers with lateral confinement provided by impurity-induced disordering
- Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate
- Vertical field-effect transistor based on wave-function extension
- METAL--INSULATOR TRANSITIONS OF V$sub 2$O$sub 3$: MAGNETIC SUSCEPTIBILITY AND NUCLEAR-MAGNETIC-RESONANCE STUDIES.
- Surface-mediated tunable self-assembly of single crystal semimetallic ErSb/GaSb nanocomposite structures.
- Spatial imaging of magnetically patterned nuclear spins in GaAs
- n/sup +/-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs
- Charge sensing of excited states in an isolated double quantum dot
- Control of electron-spin coherence using Landau level quantization in a two-dimensional electron gas
- A concept for a tunable antenna-coupled intersubband terahertz (TACIT) detector
- MILLIMETER AND SUB-MILLIMETER WAVE PERFORMANCE OF AN ERAS:INALGAAS SCHOTTKY DIODE COUPLED TO A SINGLE-TURN SQUARE SPIRAL
- InAs/AlSb HFETs with f/sub /spl tau// and f/sub max/ above 150 GHz for low-power MMICs
- Evolution of Coulomb blockade spectra in parallel coupled quantum dots
- Two-subband quantum Hall effect in parabolic quantum wells
- Evolution of the Coulomb gap in tunnel-coupled quantum dots
- Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si
- Room‐temperature two‐dimension exciton exchange and blue shift of absorption edge in GaAs/AlGaAs superlattices under an electric field
- Detection of nanosecond-scale, high power THz pulses with a field effect transistor.
- Electronic properties of the GaAsAlGaAs interface with applications to multi-interface heterojunction superlattices
- III-V heterostructures for electronic/photonic devices
- Power Generator Modules of Segmented Bi2Te3 and ErAs:(InGaAs)1−x(InAlAs)x
- Efficient III–V tunneling diodes with ErAs recombination centers
- A direct method to produce and measure compositional grading in AlxGa1−xAs alloys
- Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope
- Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs / Al x Ga 1 − x As as a model system
- Weak localization and conductance fluctuations in a chaotic quantum dot
- Detecting single-electron tunneling involving virtual processes in real time
- Tunable quantum dot lasers grown directly on silicon
- Mechanical control of spin-orbit splitting in GaAs and In 0.04 Ga 0.96 As epilayers
- Step bunching and step equalization on vicinal GaAs(001) surfaces
- Nonlinear optical spectroscopy of indirect excitons in coupled quantum wells
- State-of-the-art in 1.55 µm ultrafast InGaAs photoconductors, and the use of signal-processing techniques to extract the photocarrier lifetime
- Gate‐controlled subband structure and dimensionality of the electron system in a wide parabolic quantum well
- Magnetization and dissipation measurements in the quantum Hall regime using an integrated micromechanical magnetometer
- Magneto-optical studies of two-dimensional electrons in MQW heterostructures
- Real‐time simultaneous optical‐based flux monitoring of Al, Ga, and In using atomic absorption for molecular beam epitaxy
- Growth and characterization of TbAs:GaAs nanocomposites
- Multi-terminal transport through a quantum dot in the Coulomb-blockade regime
- ErAs as a transparent contact at 1.55μm
- Conductance Fluctuations and partially broken Spin Symmetries in Quantum Dots
- Magneto-optics of the fractional quantum hall effect
- Conductance fluctuations in a quantum dot in the tunneling regime: Crossover from aperiodic to regular behavior
- Effects of dissipation on a superconducting single electron transistor.
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure
- Low temperature limits to molecular beam epitaxy of GaAs
- Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy
- Ballistic electron emission luminescence
- BORON NUCLEAR MAGNETIC RESONANCE IN RARE EARTH INTERMETALLIC COMPOUNDS
- Ultra-Low Resistance Ohmic Contacts to InGaAs/InP
- Two-dimensional electrical transport in GaAs-AlxGa1−xAsmultilayers at high magnetic fields
- Transient Harman Measurement of the Cross-plane ZT of InGaAs/InGaAlAs Superlattices with Embedded ErAs Nanoparticles
- Hot carrier energy loss rates in GaAs quantum wells: Large differences between electrons and holes
- Dephasing in open quantum dots
- EVIDENCE FOR A SPIN TRANSITION IN THE V=2/5 FRACTIONAL QUANTUM HALL EFFECT
- Material and device considerations for selectively doped heterojunction transistors
- Magnetic moment of 181Ta
- Capture and release of photonic images in a quantum well
- Radiative recombination in doped AlGaAs/GaAs heterostructures
- The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells
- Raman phonon emission in a driven double quantum dot.
- Dynamical NL optics, bistability
- Electroreflectance of GaAs‐AlGaAs modulation‐doped field‐effect transistors
- Observation of charge storage and intersubband relaxation in resonant tunneling via a high sensitivity capacitive technique
- Single-electron transistor strongly coupled to an electrostatically defined quantum dot
- Optically addressed spatial light modulators by MBE-grown nipi MQW structures.
- Frequency Limits of InP-based Integrated Circuits
- Low Power III–V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 µA/µm at Ioff=1 nA/µm and VDS=0.5 V
- Subpicosecond photocarrier lifetimes in GaSb∕ErSb nanoparticle superlattices at 1.55μm
- Voltage tunable acoustoelectric interaction in GaAs/AlGaAs heterojunctions
- Low‐threshold high‐efficiency high‐yield impurity‐induced layer disordering laser by self‐aligned Si‐Zn diffusion
- Fabrication of GaAs bistable optical devices
- Effects of As4 flux on reflection high‐energy electron diffraction oscillations during growth of GaAs at low temperatures
- Low-Threshold Continuous-Wave Operation of Electrically Pumped 1.55 μm InAs Quantum Dash Microring Lasers
- Terahertz-optical mixing in undoped and doped GaAs quantum wells : From excitonic to electronic intersubband transitions
- Spin Relaxation of Localized Magnetic Moments and Conduction Electrons in Metals: Manganese in Silver
- p-Channel (Al,Ga)As/GaAs modulation-doped logic gates
- Ultra-narrow linewidth CW sub-THz generation using GS based OFCG and n-i-pn-i-p superlattice photomixers
- Thermal averages in a quantum point contact with a single coherent wave packet.
- Universality of Bias- and Temperature-induced Dephasing in Ballistic Electronic Interferometers
- Confinement engineering of s-d exchange interactions in GaMnAs quantum wells
- Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations.
- Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopy
- Overgrowth of InGaAs quantum dots formed by alternating molecular beam epitaxy
- Extrinsic photoluminescence from GaAs quantum wells
- Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
- Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting I ON = 482 μA/μm at I OFF = 100 nA/μ ma ndV DD = 0. 5V
- Luminescent spin-valve transistor
- Recent Advances in InAs Quantum Dot Lasers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy
- Lateral motion of terrace width distributions during step‐flow growth
- A path to 300 mm hybrid silicon photonic integrated circuits
- InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on a GaAs substrate using InP metamorphic buffer layer
- Interface between low-temperature grown GaAs and undoped GaAs as a conduction barrier for back gates
- Superconducting YBaCuO thin films on GaAs/AlGaAs
- Ballistic electron focusing by elliptic reflecting barriers
- Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor
- Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1 )B GaAs by molecular beam epitaxy
- Far-infrared saturation spectroscopy of a single square well
- Raman scattering study of InAs/GaInSb strained layer superlattices
- In situ monitoring and control for MBE growth of optoelectronic devices
- All-optical data switching in an optical-fiber link using a GaAs optical bistable device.
- Radiation effects on modulation‐doped GaAs‐AlxGa1−xAs heterostructures
- Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures
- Parallel quantum-point-contacts as high-frequency-mixers
- Local backscattering in the quantum Hall regime
- Low‐density high‐mobility electron gas in wide parabolic GaAs/AlxGa1−xAs wells
- NUCLEAR MAGNETIC RESONANCE AND SUPERCONDUCTIVITY IN THE CLATHRATE SALT [Ag$sub 7$O$sub 8$]$sup +$HF$sub 2$.
- Magnetic and paramagnetic resonance properties of EuAl4
- Self-assembled ErSb nanostructures with optical applications in infrared and terahertz.
- Light scattering from two-dimensional electron systems in strong magnetic fields
- Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates
- Light scattering in GaAs parabolic quantum wells
- High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching
- Avalanche spin-valve transistor
- Two-photon absorption spectrum of AlAs-GaAs monolayer crystals
- Optical gain anisotropy in serpentine superlattice nanowire‐array lasers
- Low-voltage modulator and self-biased self-electro-optic-effect device
- Terrace width evolution during step‐flow growth with multiterrace adatom migration
- 1∕f noise in all-epitaxial metal-semiconductor diodes
- Mapping spin-orbit splitting in strained (In,Ga)As epilayers
- Quantum-engineering of III–V semiconductor structures
- Using a quantum well heterostructure to study the longitudinal and transverse electric field components of a strongly focused laser beam
- Pinning a domain wall in (Ga,Mn)As with focused ion beam lithography
- High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate
- Height-selective etching for regrowth of self-aligned contacts using MBE
- Depolarization shift of the intersubband resonance in a quantum well with an electron-hole plasma
- InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and f/sub /spl tau//, f/sub max/>268 GHz
- High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate
- Photoluminescence and excitation spectroscopy in coupled GaAs-Ga(Al)As quantum wells
- Electric properties of unipolar GaAs structures with ultrathin triangular barriers
- Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications
- Erratum: Antiferromagnetic s − d Exchange Coupling in GaMnAs [Phys. Rev. Lett. 95 , 017204 (2005)]
- Imaging electron interferometer.
- Record extrinsic transconductance (2.45 mS/µm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth
- Photon‐assisted tunneling in GaAs/AlGaAs superlattices up to room temperature
- Thermal properties of metamorphic buffer materials for growth of InP double heterojunction bipolar transistors on GaAs substrates
- Imaging a coupled quantum dot-quantum point contact system
- Single electron charging in parallel coupled quantum dots
- Wafer-fused optoelectronics for switching
- Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si
- Determination of the electronic phase coherence time in one-dimensional channels
- High bias transport and magnetometer design in open quantum dots
- Monitoring Ga and In desorption and In surface segregation during MBE using atomic absorption
- Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs
- Variation of elastic scattering across a quantum well
- Demonstration of electron filtering to increase the Seebeck coefficient in ErAs:InGaAs/InGaAlAs superlattices
- High precision de Haas-van Alphen measurements on a two-dimensional electron gas
- Terahertz metamaterial devices
- An optimized digital alloy growth technique for accurate band gap engineering
- Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot.
- Elimination of the emitter/collector offset voltage in heterojunction bipolar transistors
- Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film
- Observation of doubly resonant LO-phonon Raman scattering with GaAs-Alx Ga1−x As quantum wells
- Minority carrier barrier heterojunctions for improved thermoelectric efficiency
- On the Feasibility of few-THz Bipolar Transistors
- Fractal Lévy Heat Transport in Nanoparticle Embedded Semiconductor Alloys.
- Effect of a charged scanned probe microscope tip on a subsurface electron gas
- ErAs epitaxial Ohmic contacts to InGaAs/InP
- Electron subbands in a double quantum well in a quantizing magnetic field
- The role of microstructure in the electrical properties of GaAs grown at low temperature
- Electrical control of spin precession in semiconductor quantum wells
- Effect of spatial resolution on the estimates of the coherence length of excitons in quantum wells
- Sub-diffraction limit thermal imaging for HEMT devices
- Exciton front propagation in photoexcited GaAs quantum wells
- Electrical properties of Er-doped In0.53Ga0.47As
- Molecular enhancement of ferromagnetism in GaAs∕GaMnAs heterostructures
- Resonantly enhanced photon-assisted tunneling in a multiple-quantum-well superlattice
- III-V MOSFETs: Scaling laws, scaling limits, fabrication processes
- Subband densities in quantum wells under in-plane magnetic fields
- Kinetics of indirect excitons in an optically induced trap in GaAs quantum wells
- BROMINE NUCLEAR MAGNETIC RESONANCE IN FERROMAGNETIC CrBr$sub 3$
- Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si
- Charge-imaging field-effect transistor
- Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures.
- Quantum size effects in GaAsGaAlAs quantum well wires and quantum well boxes
- 6 – MODULATION-DOPED SEMICONDUCTORS
- Measurements of the spin relaxation rate at low magnetic fields in a quantum dot
- Serpentine superlattice nanowire-array lasers
- A 183 GHz f/sub T/ and 165 GHz f/sub max/ regrown-emitter DHBT with abrupt InP emitter
- Chapter 2 Wide Graded Potential Wells
- Thickness dependence of the terahertz response in (110)-oriented GaAs crystals for electro-optic sampling at 1.55 microm.
- Far-infrared electroluminescence from parabolic quantum well superlattices excited by resonant tunneling injection
- Bouncing states in quantum dots
- Materials science in the far-IR with electrostatic based FELs
- Low‐threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure
- Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors
- High speed, low leakage current InP/In/sub 0.53/Ga/sub 0.47/As/InP metamorphic double heterojunction bipolar transistors
- Summary Abstract: Direct observation of band mixing in GaAs–(AlxGa1−x)As quantum heterostructures
- Aharonov-Bohm phase shift in an open electron resonator
- Excitation energy dependence of the exciton inner ring
- Nanometer InP electron devices for VLSI and THz applications
- Finite-bias charge detection in a quantum dot
- NMR in Domains and Walls in Ferromagnetic CrBr3
- Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etching
- Low-dimensional systems: Quantum wires and quantum boxes by MBE
- High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding
- Technology development & design for 22 nm InGaAs/InP-channel MOSFETs
- Parabolic quantum wells with the GaAs-Al x Ga1−x As system
- Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb
- Quantum Interference in Semiconductor Quantum Wells
- Fabry-Perot multiple-quantum well index modulator.
- Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region
- High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz
- Tunneling through MnAs particles at a GaAs pn junction
- Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure
- 2005 International Conference on Thermoelectrics
- Capacitance-voltage profiling through graded heterojunctions: Theory and experiment
- Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells
- Magnetization and density of states of the 2D electron gas in GaAs/AlGaAs heterostructures
- Raman scattering by plasmons in fibonacci superlattices
- Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission
- Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers
- Dimerization of a linear Heisenberg chain in the insulating phases of V/sub 1-x/Cr/sub x/O$sub 2$
- Fluctuation and commensurability effect of exciton density wave
- Measuring the mechanical resonance of a GaAs/AlGaAs cantilever using a strain-sensing field-effect transistor
- High temperature thermoreflectance imaging and transient Harman characterization of thermoelectric energy conversion devices
- Ultrathin InAs-channel MOSFETs on Si substrates
- Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields.
- Analysis of Pulsed THz Imaging Using Optical Character Recognition
- NMR STUDY OF A LOCALIZED MOMENT: $sup 51$V NMR IN DILUTE GOLD--VANADIUM ALLOYS.
- Interference between two coherently driven monochromatic terahertz sources
- Measurement and modeling of ErAs:In0.53Ga0.47As nanocomposite photoconductivity for THz generation at 1.55 μm pump wavelength
- Electroluminescence from a heterojunction bipolar transistor
- Coulomb effects in spatially separated electron and hole layers in coupled quantum wells
- Carrier compensation in semiconductors with buried metallic nanoparticles
- Measurements of far-infrared intersubband absorption linewidths in GaAs/AlGaAs quantum wells as a function of temperature and charge density
- Magnetic ordering of a d1 compound: VF4
- Role of steps in epitaxial growth
- Nonequilibrium fluctuation relations in a quantum coherent conductor
- MODULATION-DOPED GRADED STRUCTURES : GROWTH AND CHARACTERIZATION
- Magnetic anisotropy in arrays of nanometer-scale iron particles
- 12 nm-gate-length ultrathin-body InGaAs/InAs MOSFETs with 8.3•105 ION/IOFF
- Imaging coherent electron wave flow in a two-dimensional electron gas
- Observation of quantized hall effect and vanishing resistance at fractional Landau level occupation
- III-V/Ge Channel Engineering for Future CMOS
- Microstructure and electronic characterization of InGaAs containing layers of self-assembled ErAs nanoparticles
- Electron transport and intrinsic mobility limits in two-dimensional electron gases of III-V nitride heterostructures
- Repulsive interaction in the macroscopically ordered exciton state in GaAs ∕ Al x Ga 1 − x As coupled quantum well structures
- Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si
- Reduced thermal conductivity in Er-doped epitaxial InxGa1−xSb alloys
- Optically Controlled Excitonic Transistor
- Role of nanostructures in reducing thermal conductivity below alloy limit in crystalline solids
- Topological defects in the edge-state structure in a bilayer electron system
- Measurement of exciton correlations using electrostatic lattices
- Logarithmically graded quantum well far‐infrared modulator
- Electron plasma resonances in wide parabolic quantum wells
- Interplay between the periodic potential modulation and random background scatterers in an antidot lattice
- Alternate‐monolayer single‐crystal GaAs‐AlAs optical waveguides
- First MMW characterization of ErAs/InAlGaAs/InP semimetal-semiconductor-Schottky diode (S3) detectors for passive millimeter-wave and infrared imaging
- Electro-optic polarization tuning of microcavities with a single quantum dot.
- Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy
- An Ultra-Low Power InAs/AlSb HEMT X-Band Low-Noise Amplifier and RF Switch
- Switching in NERFET circuits
- Substitutional-Gate MOSFETs With Composite $( \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth
- Hot carrier drift velocities in GaAs/AlGaAs multiple quantum well structures
- Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth
- Steady-state and picosecond investigation of hot carrier-phonon interactions in 2D systems
- Device performance of submicrometre MESFETs with LTG passivation
- Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs
- Transport properties of GaAs IGFETs
- Spatial Light Modulator and Optical Dynamic Memory Using Integrated Self Electro-optic Effect Devices
- RF noise performance of low power InAs/AlSb HFETs
- REDUCTION OF SPIN POLARIZATION NEAR LANDAU FILLING FACTOR UPSILON = 3 IN GAAS/ALGAAS QUANTUM WELLS
- Arrayed free space continuous-wave terahertz photomixers.
- Terahertz Dynamics in Quantum Structures: Towards a Fundamental Terahertz Oscillator
- Covalent distribution of spin in V2O3:O17 nuclear resonance
- Electrons in quantum dots: One by one
- Alloy Clustering in Al x Ga 1-x As
- Controlling Light with Light: Optical Bistability and Optical Modulation (With 12 Figures)
- Onset of Magnetism in Vanadium Oxides: 51V NMR Studies of VO
- Modulation Doping of Semiconductor Heterostructures
- Pancharatnam–Berry phase in condensate of indirect excitons
- Interaction of tunnel-coupled quantum dots in a magnetic field
- Optical computing and related microoptic devices.
- Inhibited recombination of charged magnetoexcitons
- Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0.56Sb0.44 confinement layers
- Indirect excitons in a potential energy landscape created by a perforated electrode
- Threshold reduction by rapid thermal annealing in MBE-grown AllnGaAs multiquantum well lasers on GaA
- Photoinduced intersubband absorption in barrier doped multi-quantum-wells
- Faraday–Stark optoelectronic effect
- Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy
- From two-dimensional to three-dimensional quantum dots
- High-Frequency Magnetic Resonance in Cobalt Intermetallic Compounds
- Multipeak Kondo effect in one- and two-electron quantum dots.
- Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study
- Frequency-Dependent Thermal Conductivity in Time Domain Thermoreflectance Analysis of Thin Films
- Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etching
- Probing the Kondo density of states in a three-terminal quantum ring
- Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells
- Charge and spin manipulation in a few-electron double dot
- Picosecond sampling with fiber-illuminated ErAs:GaAs photoconductive switches in a strong magnetic field and a cryogenic environment
- The effect of resonant sublevel coupling on intersubband transitions in coupled double quantum wells
- Lower limits to specific contact resistivity
- Light scattering determination of band offsets in GaAs(AlGa)As and GaSb(AlGa)Sb quantum wells: A comparative study
- Continuous wave terahertz emitter arrays for spectroscopy and imaging applications
- A Pathway to Thin GaAs Virtual Substrate on On‐Axis Si (001) with Ultralow Threading Dislocation Density
- Few-electron quantum dots for quantum computing
- Low‐temperature carrier distributions in wide quantum wells of different shapes from capacitance‐voltage measurements
- Transverse momentum nonconservation at the ErAs/GaAs interface
- Coherent nonlinear transport in quantum rings
- Damping of micromechanical structures by paramagnetic relaxation
- Classical advection of guiding centers in a random magnetic field
- THz Indium Phosphide Bipolar Transistor Technology
- Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wells
- Conductance fluctuations of chiral metals
- Co-doping of InxGa1−xAs with silicon and tellurium for improved ultra-low contact resistance
- Classical magnetotransport in a parabolic quantum well with a strong intersubband scattering
- InP DHBT in MBE Regrown-Emitter Technology
- Picosecond Joule heating in photoconductive switch electrodes
- Spatially resolved and time-resolved imaging of transport of indirect excitons in high magnetic fields
- Quantum interference of intersubband transitions in coupled quantum wells
- Fiber-Coupled 2-D n-i-pn-i-p Superlattice Photomixer Array
- Properties of PrPb3 in Relation to Other L12 Phases of Pr
- (Invited) Record-Performance In(Ga)As MOSFETS Targeting ITRS High-Performance and Low-Power Logic
- Excitation of edge magnetoplasmons in a two-dimensional electron gas by inductive coupling
- Ultrafast spectroscopy of impact ionization and avalanche multiplication in GaAs
- Many-body effects in highly acceptor-doped GaAs/Al x Ga 1-x As quantum wells
- In situ treatment of a scanning gate microscopy tip
- Tapered GaAs quantum wells and selectively contactable two‐dimensional electron gases grown by shadow masked molecular‐beam epitaxy
- IIIA-3 modulation-doped field-effect transistors and logic gates based on two-dimensional hole gas
- Semiconductor nonlinear etalons
- Optical pulse tailoring and termination by self-sweeping of a fabry-perot cavity
- Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation
- Optical anisotropy of cyclopentene terminated GaAs(001) surfaces
- Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells
- Morphology and optical properties of strained InGaAs quantum wires
- Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy
- Technology development & design for 22 nm InGaAs/InP-channel MOSFETs
- Magnetoresistance of chiral surface states in the integer quantum Hall effect
- Array of optically bistable integrated self-electrooptic effect devices
- A 160-GHz f/sub T/ and 140-GHz f/sub MAX/ submicrometer InP DHBT in MBE regrown-emitter technology
- Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects
- Toward the manipulation of a single spin in an AlGaAs/GaAs single-electron transistor
- InAs/InAsP composite channels for antimonide-based field-effect transistors
- Interface phonons in short-period GaAs/AlAs superlattices : wave vector-selective and defect-activated
- Noise, drift, and calibration in optical flux monitoring for MBE
- 60 nm gate length Al2O3 / In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth
- Photon storage with subnanosecond readout rise time in coupled quantum wells
- Preparing, manipulating, and measuring quantum states on a chip
- International System of Units (SI) Traceable Noise-Equivalent Power and Responsivity Characterization of Continuous Wave ErAs:InGaAs Photoconductive Terahertz Detectors
- Two-dimensional electron gas systems at semiconductor interfaces
- Remotely‐doped superlattices in wide parabolic GaAs/AlxGa1−xAs quantum wells
- Imaging electron waves
- A photoconductivity study of the excitons in doped and undoped {GaAs}/{AlGaAs} quantum wells
- Intersubband dynamics of asymmetric quantum wells studied by THz `optical rectification'
- Universal fluctuations of Coulomb blockade peaks in quantum dots
- Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm
- >100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP
- Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons
- Probing electron probability-density in parabolic quantum wells
- Broadband THz detection and homodyne mixing using GaAs high-electron-mobility transistor rectifiers
- Electro-optic effects in GaAs/AlGaAs parabolic quantum well structures
- High-efficiency vertical-cavity lasers and modulators
- Low-frequency noise in epitaxially grown Schottky junctions
- Growth and characterization of Be modulation doped wide parabolic GaAs⧸AlxGa1-xAs wells
- Virtual states, dynamic localization, absolute negative conductance and stimulated multiphoton emission in semiconductor superlattices
- 2D electrical transport in GaAs-AlxGa1−xAs multilayers at high magnetic fields
- ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW.
- Landau level density of states through specific heat in GaAs/GaAlAs multilayers
- Erratum: Exact solutions for a diffusion-reaction process in one dimension [Phys. Rev. Lett. 60, 871 (1988)]
- Anisotropic magnetic response of a chiral conducting film
- Characterization of GaAs/AlGaAs heterojunctions by optical detection of cyclotron resonance
- Scattering-Assisted Tunneling: Energy Dependence, Magnetic Field Dependence, and Use as an External Probe of Two-Dimensional Transport
- Effect of hydrogen passivation on Be‐doped AlGaAs/GaAs quantum wells
- QUANTUM DOTS BASED ON PARABOLIC QUANTUM WELLS: IMPORTANCE OF ELECTRONIC CORRELATIONS
- Imaging Coherent Electron Flow
- A tunable quantum well infrared detector based on photon-assisted resonant tunnelling
- Suppressing on-chip electromagnetic crosstalk for spin qubit devices
- Far‐infrared capture of electrons by DX centers
- RELATION BETWEEN ELECTRON SPIN RESONANCE AND NUCLEAR MAGNETIC RESONANCE IN TRANSITION METAL INTERMETALLIC COMPOUNDS
- Wide electron gas with periodic density modulation
- Coulomb gap of coupled quantum dots with adjustable interdot tunneling
- Photon assisted transport through semiconductor quantum structures in intense terahertz electric fields
- Anisotropic band structure of a parabolically confined electron system subjected to an in-plane magnetic field
- InAs/InGaAs self-assembled quantum dots grown on (311)B GaAs by molecular beam epitaxy
- Probing terahertz dynamics in semiconductor nanostructures with the UCSB free-electron lasers
- Zero Gap Electron Waveguide Coupler
- TE- and TM-polarization-resolved spectroscopy on quantum wells under normal incidence
- Depolarization shift in coupled quantum wells with tunable level spectrum
- Electron spin polarization-based integrated photonic devices.
- Measuring interactions between tunnel-coupled quantum dots in the quantum Hall regime
- Energy Levels of Two Dimensional Holes in GaAs-(AlGa)as Quantum Well Heterostructures
- Comments on magnetic properties of Nb3X compounds
- Magneto-capacitance-voltage measurements of electrons in wide parabolic quantum wells
- Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems
- A Reflection Based, Pulsed THz Imaging System with 1 mm Spatial Resolution
- Few-electron quantum dot fabricated with layered scanning force microscope lithography
- Anisotropic magnetotransport in an antiwire array inserted in a GaAs heterostructure
- Negative photoconductivity in modulation-doped quantum wells
- Anomalous temperature dependence of electrical transport in quantum Hall multilayers
- Scanned potential microscopy of edge states in a quantum Hall liquid
- Single photons and unconventional photon blockade in quantum dot cavity-QED
- Resonant Harmonic Generation Near 100μm in an Asymmetric Double Quantum Well
- Optical Bistability in a GaAs Etalon
- Femtosecond dynamics of inter-Landau level excitations of a two-dimensional electron gas in the quantum Hall regime
- Femtosecond spectroscopy of unipolar nanometer-scale high-field transport of holes in Al0.08Ga0.92As
- Low-temperature transport measurements of superconductors and semiconductors in magnetic fields to 800 T
- Stirring potential for indirect excitons
- Opening an energy gap in an electron double layer system at the integer filling factor in a tilted magnetic field
- Gate-Sensing Charge Pockets in the Semiconductor-Qubit Environment
- OPTICAL BISTABILITY, REGENERATIVE PULSATIONS, AND TRANSVERSE EFFECTS IN ROOM-TEMPERATURE GaAs-AlGaAs SUPERLATTICE ETALONS
- Quantum effects at GaAs/AlxGa1−xAs junctions☆
- Experimental observation of coherent backscattering in open ballistic microstructures
- Resonant tunneling through quantum wells: Physics and device applications
- Imaging coherent electron ow in a two-dimensional electron gas
- Growth and doping of heterostructures for high electron mobilities
- Lateral superlattices on parabolic quantum wells
- Fast Multiple Quantum Well Absorber for Mode Locking of Semiconductor Lasers
- High Efficiency, High Gain and High Saturation Output Power Quantum Dot SOAs Grown on Si and Applications
- Anomalous polarization in the photoluminescence from Si-dopedGaAs−AlxGa1−xAsquantum-well samples
- Novel concept for efficient THz-emitters based on quasi-ballistic transport in an asymmetric superlattice
- Electrical Transport in a Semimetal–Semiconductor Nanocomposite
- Capacitive detection of subband structure in the electron gas in a wide parabolic GaAs/AlxGa1−xAs quantum well
- Temperature dependence of vertical transport in quantum Hall multilayers
- Offset channel insulated gate field‐effect transistors
- Infrared absorption of holes in a parabolic quantum well
- Vertically integrated optics for ballistic electron emission luminescence : Device and microscopy characterizations
- Observation of quasi-periodic facet formation during high temperature growth of AlAs and AlAs/GaAs superlattices
- Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs
- Quantum well-based tunable antenna-coupled intersubband terahertz (TACIT) detectors at 1.8-2.4 THz
- THz response of GaAs/AlGaAs superlattices: from classical to quantum dynamics
- Novel approaches in 2 and 3 dimensional confinement structures : processing and properties
- Investigation of the electronic properties of in situ annealed low‐temperature gallium arsenide grown by molecular beam epitaxy
- Inelastic light scattering spectroscopy of a multilayer two-dimensional electron gas
- Structure-controlled magnetic anisotropy in ferromagnetic semiconductor superlattices
- Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy
- Two-Dimensional Array Microlasers for Photonic Switching
- Tilted field effects in quantum Hall multilayers
- Oscillations of the cyclotron resonance linewidth with Landau level filling factor in GaAs/AlGaAs heterostructures
- Fabrication of GaAs/AlGaAs high electron mobility transistors with 250 nm gates using conformal phase shift lithography
- Conductance peak splitting in charge polarized coupled quantum dots
- Superlattice transport in intense terahertz electric fields
- Nanocomposites of Semimetallic ErAs Nanoparticles Epitaxially Embedded within InGaAlAs-based Semiconductors for Thermoelectric Materials
- Dynamics of free and bound excitons in center-doped GaAs/AsGaAs quantum wells
- A two-dimensional ultrahigh vacuum positioner for scanning tunneling microscopy
- Observation of resonant tunneling through a compositionally graded parabolic quantum well
- Quantum dot lasers grown on (001) Si substrate for integration with amorphous Si waveguides
- Impact ionization of free and bound excitons in AlGaAs/GaAs quantum wells
- Initial relaxation of photoexcited carriers in GaAs and GaAs quantum wells under subpicosecond excitation
- Embedded coplanar strips traveling-wave photomixers
- Electric-field-driven insulating-to-conducting transition in a mesoscopic quantum dot lattice
- Vertically integrated optics for ballistic electron emission luminescence microscopy
- Measurement of the electronic dephasing time via the weak localization effect in a narrow channel
- Magnetotransport characterization of remotely-doped superlattices in wide parabolic GaAs/AlxGa1−xAs quantum wells
- Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs
- 1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si
- Inelastic light scattering by two dimensional electron systems in high magnetic fields
- Optically patterned nuclear doughnuts in GaAs∕MnAs heterostructures
- LIGHT SCATTERING FROM PHONONS IN GaAs-AlAs SUPERLATTICES
- Ultrafast high-field transport in GaAs: direct observation of quasi-ballistic electron motion, impact ionization and avalanche multiplication
- Intersubband scattering of cold electrons in a coupled quantum well with subband spacing below ℏωLO
- New electronic phenomena based on multilayer epitaxy
- Spin ordering: two different scenarios for the single and double layer structures in the fractional and integer quantum Hall effect regimes
- Variable-range hopping in the bulk of quantum Hall multilayers
- Nuclear Quadrupole Interaction in the Metallic State of V2O3
- Spontaneous coherence of indirect excitons in a trap
- Trapping of Cold Excitons with Laser Light
- FIR Investigations of GaAs/GaAlAs Heterostructures
- HOLE-ACOUSTIC PHONON ENERGY LOSS RATES IN GaAs QUANTUM WELLS DETERMINED BY LIGHT SCATTERING
- Erratum: “Effect of nanoparticle scattering on thermoelectric power factor” [Appl. Phys. Lett. 94, 202105 (2009)]
- Effect of nonuniform continuum density of states on a Fano resonance in semiconductor quantum wells
- Polarization-dependent spectral redshifts atν=1andν=2in a GaAs quantum well in high magnetic fields up to 60 T
- Graded potential wells with quasi-uniform charge distribution
- Counting Statistics of Single Electron Transport in a Semiconductor Quantum Dot
- Imaging of carrier dynamics in semiconductor heterostructures by surface acoustic waves
- ErAs/InGaAs superlattice Seebeck coefficient
- Conductance oscillations in a deformable quantum ring
- Terahertz generation with ballistic photodiodes under pulsed operation
- Scanning gate measurements in the quantum Hall regime at 300 mK
- Transport of indirect excitons in high magnetic fields
- Design and characterization of optical-THz phase-matched traveling-wave photomixers
- Interband magnetoabsorption study of the shift of the Fermi energy of a 2DEG with an in-plane magnetic field
- Nonlinear Photoluminescence Kinetics of Indirect Excitons in Coupled Quantum Wells
- Summary Abstract: Light scattering determination of band offsets in semiconductor quantum wells
- High power terahertz photomixer arrays
- Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator
- High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon
- Tunneling through point contacts in the quantum Hall effect
- Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/$\sqrt{\text{Hz}}$ at 0.6 THz
- Effects of a hot two-dimensional electron gas on optical properties of modulation-doped GaAs/AlGaAs heterostructures
- The shallow Si donor confined in a {GaAs}/{AlGaAs} quantum well
- Resonant inelastic light scattering in remotely doped wide parabolic GaAs/AlxGa1-xAs quantum wells in a magnetic field
- Quantum dot micro-lasers integrated with photodetectors and optical amplifiers on (001) Si via waveguide coupling
- Influence of InP source/drain layers upon the DC characteristics of InAs/InGaAs MOSFETs
- Coulomb oscillations in partially open quantum dots
- Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs
- Solid-State and Vacuum Thermionic Energy Conversion
- Picosecond-Scale Terahertz Pulse Characterization With Field-Effect Transistors
- THz-emitter based on ballistic transport in nano-pin diodes
- High performance quantum dot lasers epitaxially integrated on Si
- FEMTOSECOND DYNAMICS OF NONEQUILIBRIUM CORRELATED ELECTRON-HOLE PAIR DISTRIBUTIONS IN ROOM-TEMPERATURE GaAs MULTIPLE QUANTUM WELL STRUCTURES
- Noise measurements in quantum dots using charge detection techniques
- Inelastic light scattering of valence subband transitions in GaAs/GaAlAs multiple quantum wells
- Surface-gated quantum Hall effect in an InAs heterostructure
- Quantum dot lasers on silicon
- Josephson junction oscillators as probes of electronic nanostructures
- MAGNETIC-FIELD-INDUCED CHARGE LOCALIZATION IN A HIGH-MOBILITY SEMICONDUCTOR SUPERLATTICE
- Hot-Carrier Effects on Optical Properties of GaAs/Al x Gai 1-x As Quantum Wells
- Pressure Dependence of the Harmonic Oscillator Levels of AlxGa1-xAs Parabolic Quantum Wells
- Phonon Emission and Carrier Heating in a Two-Dimensional Hole Gas
- Self-Defocusing and Optical Crosstalk in a Bistable Optical Etalon
- Imaging Electrons in Few-Electron Quantum Dots
- Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si
- High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector
- Relaxation of Single Electron Spins by Nuclei in a Double Quantum Dot
- Photoemission and Photoluminescence from GaAs/GaAlAs Superlattices
- Optical Bistability from Increasing Absorption
- Imaging coherent electron wave flow in a two-dimensional electron gas
- Low leakage and high speed InP/In/sub 0.53/Ga/sub 0.47/As/InP metamorphic double heterojunction bipolar transistors in GaAs substrates
- Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature
- Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
- Terabit Interconnects with a 20-GHz O-Band Passively Mode Locked Quantum Dot Laser Grown Directly on Silicon
- Electro-optical probing of envelope wavefunctions in GaAs/AlGaAs parabolic quantum well structures
- Quantum oscillations in a mechanical resonator containing a two-dimensional electron system
- Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si
- 1 Dephasing in Open Quantum Dots
- Transistors for VLSI, for wireless: A view forwards through fog
- Current Noise in Quantum Point Contacts
- Terahertz harmonic generation from Bloch-oscillating superlattices in quasi-optical arrays
- Effects of localization on optical spectra for shallow acceptors in center-doped GaAs/AlGaAs multiple quantum wells
- Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells
- Hole Heating and Hole-Phonon Interaction in Modulation Doped 2D Hole System
- Low-dark current 1.55 μm InAs quantum dash waveguide photodiodes
- Highly anharmonic potential modulation in lateral superlattices fabricated using epitaxial InGaAs stressors
- S5-H6: Leakage current suppression in InGaaS-channel MOSFETs: Recessed InP source/drain spacers and InP channel caps
- High-Performance InP / In 0 : 53 Ga 0 : 47 As / InP Double HBTs on GaAs Substrates
- Artificial Coherent States of Light by Multiphoton Interference in a Single-Photon Stream.
- High Performance III-V MOS Technologies
- Thermal Conductivity Measurements of ErAs:InGaAlAs for Thermoelectric Applications
- Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation
- Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy
- Erratum: “High efficiency semimetal/semiconductor nanocomposite thermoelectric materials” [J. Appl. Phys.108, 123702 (2010)]
- ErAs island-stacking growth technique for engineering textured Schottky interfaces
- Optical studies of acceptor centre doped GaAsAlGaAs quantum wells
- Control of InGaAs and InAs facets using metal modulation epitaxy
- Intrinsic two-hole transitions demonstrating the localization effects due to interface roughness
- Conductance oscillations in tunnel-coupled quantum dots in the quantum Hall regime
- Time-resolved interference experiments in a solid state environment
- Intersubband transitions in band gap engineered parabolic potential wells
- Spatially selective excitation of shallow acceptors in GaAs/AlxGa1−xAs quantum wells
- Direct injection tunnel spectroscopy of a p-n junction
- Speed and effectiveness of windowless GaAs etalons as optical logic gates
- Ultrafast tunable antenna-coupled quantum-well THz detectors operating above 100K
- High-frequency conductivity of ion-beam-defined quantum wires with a self-aligned gate
- Magnetic-field-induced hybridization of electron subbands in a coupled double quantum well
- Spectroscopic Studies of the Effect of Confinement on Defect States in GaAs/AlGaAs Quantum Wells
- Low Threshold Current 1.3 μm Fabry-Perot III-V Quantum Dot Lasers on (001) Si with Superior Reliability
- Ballistic hole emission luminescence
- Low-Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes.
- The Resonant Exchange Qubit
- Pulsed Optical Logic in GaAs Etalons
- Manifestation of the bulk phase transition in the edge energy spectrum in a two-dimensional bilayer electron system
- Reply to "comment on 'condensation of excitons in a trap'".
- Linewidth and dephasing of THz-frequency collective intersubband transitions in a GaAs/AlGaAs quantum well
- Spectroscopy of excitons and phonons in quantum well heterostructures
- Metamaterials for Novel Terahertz and Millimeter Wave Devices
- InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on a GaAs substrate using InP metamorphic buffer layer
- Optical frequency combs from high-order sideband generation.
- Investigation of parasitic coupling of THz radiation to a large area field-effect transistor
- Spectroscopic study of radiative recombinations in GaAs/AlGaAs heterostructures
- Tunable Terahertz Source
- Optical Computing Using Surface Emitting Lasers
- Structural engineering of ferromagnetism in III–V digital ferromagnetic heterostructures
- Dynamics of carriers in resonantly excited quantum-well lasers studied by intersubband absorption
- Two-dimensional snowflake trap for indirect excitons.
- Localization of 2D electrons in GaAsAlxGa1−xAs heterostructures
- Dispersive properties of self-complementary log-periodic antennas in pulsed THz systems
- MAGNETIC SUSCEPTIBILITY AND NUCLEAR RESONANCE STUDIES OF METAL-INSULATOR TRANSITION OF (V1-x Crx)2O3 AND (V1-xALx)2O3
- Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells
- Traveling-Wave Photomixers Based On Noncollinear Optical/Terahertz Phase-Matching
- NRZ and PAM-4 Direct Modulation of $1.3\ \mu\mathrm{m}$ Quantum Dot Lasers Grown Directly on On-Axis (001) Si
- Terahertz emission by quantum beating in a modulation doped parabolic quantum well
- Tunable Antenna-Coupled Intersubband Terahertz (TACIT) Detectors for Operation Above 4K
- Charge transport and phase transition in exciton rings
- Regrown ohmic contacts to InxGa1−xAs approaching the quantum conductivity limit
- Helmholtz-Zentrum Dresden-Rossendorf (HZDR) Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz
- Terahertz metamaterials for active, tunable, and dynamic devices
- Plasmon excitation by coulomb scattering of electrons in 2D systems
- Wave-function spectroscopy in parabolic quantum wells
- 100 GHz colliding pulse mode locked quantum dot lasers directly grown on Si for WDM application
- Time Resolved Measurements of Radiative Recombination in GaAs/AIGaAs Heterostructures
- Optical modulation by optical tuning of a Fabry-Perot cavity
- A scanning tunneling microscopy study of low-temperature grown GaAs
- Tunable Quantum-Well Submillimeter-Wave Oscillators
- Optical spectroscopy of MBE grown quantum wells at various acceptor doping levels
- Linewidth of THz intersubband transitions in GaAs/AlGaAs quantum wells
- Coherent terahertz mixing spectroscopy of asymmetric quantum well intersubband transitions
- DEVELOPMENT OF THZ TRANSISTORS AND ( 300-3000 GHZ ) SUB-MM-WAVE INTEGRATED CIRCUITS
- InGaAs nipnip Superlattice THz Emitters
- Erratum to: Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature
- Time-resolved photoluminescence from wide parabolic GaAs/AlxGa1−xAs quantum wells in high magnetic fields
- Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates
- Thermal Conductivity Characterization and Modeling of P-Type Metal/Semiconductor Nanocomposites
- Frequency-selective single-photon detection with a double quantum dot
- Novel Selection Rules in Resonant Raman Scattering from GaAs Quantum Wells
- Multi-quantum well electro-optic modulator using a combination of excitonic index and absorption changes
- Time resolved intersubband optical transitions in resonantly optically pumped semiconductor lasers
- Far-infrared harmonic generation from semiconductor heterostructures
- 35 nm-Lg raised S/D In0.53Ga0.47As quantum-well MOSFETs with 81 mV/decade subthreshold swing at VDS=0.5 V
- Decay Measurements of Free and Bound Exciton Recombination in Doped GaAs/GaAIAs Quantum Wells
- High bandwidth and low-leakage current InP-In/sub 0.53/Ga/sub 0.47/As-InP DBHTs on GaAs substrates
- The Interaction in the Macroscopically Ordered Exciton State
- Summary Abstract: Molecular beam epitaxy of p‐type modulation doped GaAs and application to p‐channel field effect transistors
- Intraminiband plasmons in a superlattice within a parabolic well
- Novel metal/semiconductor nanocomposite and superlattice materials and devices for thermoelectrics
- Asymmetries of the conductance matrix in a three-terminal quantum ring in the Coulomb blockade regime
- Low leakage current metamorphic InGaAs/InP DHBTs with f/sub /spl tau// and f/sub max/ > 268 GHz on a GaAs substrate
- 2D transport at the surface of a 3D quantum Hall system
- A Photonic Local Oscillator Source for Far-IR and Sub-mm Heterodyne Receivers
- Suppressing On-Chip EM Crosstalk for Spin Qubit Devices
- Growth and magnetic properties of (Ga,Mn)As as digital ferromagnetic heterostructures
- The conduction barrier at the interface between low temperature grown GaAs and undoped GaAs
- Direct measurement of the thin-film thermoelectric figure of merit at high temperatures
- Complementary p-MODFET and n-HB MESFET (Al,Ga)As FET's
- Comparison of large area and lumped element field-effect transistors for broadband detection of Terahertz
- Two‐subband quantum Hall effect in parabolic quantum wells
- High speed (207 GHz f/sub /spl tau//), low thermal resistance, high current density metamorphic InP/InGaAs/InP DHBTs grown on a GaAs substrate
- Spin transport of indirect excitons in GaAs coupled quantum wells
- Magneto optics of an electron system with variable dimensionality
- Few-cycle THz spectroscopy of nanostructures
- Temperature dependence of conductance fluctuations in quantum Hall multilayers
- Wavelength-selective voltage-tunable photodetector made from multiple quantum wells
- Quantum Dot Lasers: 1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si (Laser Photonics Rev. 14(7)/2020)
- Localization and interaction of indirect excitons in GaAs coupled quantum wells
- Quantum Dot Photonic Integrated Circuits on Silicon
- Magneto optics of the spatially separated electron and hole layers in GaAs/AlGaAs coupled quantum wells
- Erratum: Zero-field optical manipulation of magnetic ions in semiconductors
- Two electron transitions of the exciton bound at the Si Donor confined in GaAs/AlxGa1-xAs quantum wells
- Precision engineered semimetal-semiconductor diodes for mm-wave and THz rectifiers
- Temperature dependence of exciton-capture at impurities in GaAs/AlxGa(1-x) As quantum wells
- Intrinsic mobility limits in polarization induced two-dimensional electron gases
- Kondo effect in a three-terminal quantum ring
- 200 GHz f/sub max/, f/sub /spl tau// InP/In/sub 0.53/Ga/sub 0.47/As/InP metamorphic double heterojunction bipolar transistors on GaAs substrates
- Study of Transport Through Low-Temperature GaAs Surface Insulator Layers
- Statistics of peak spacings and widths in the quantum coulomb blockade regime
- Tunable Antenna-Coupled Intersubband Terahertz (TACIT) Mixers: The Quantum Limit Without the Quantum Liquid.
- Dirac series experiments in 800 T fields:: Innovations for transport measurements
- The Dynamic Nuclear Environment in a Double Quantum Dot
- Plasmons in a superlattice in a parabolic quantum well
- InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths
- Magnetocapacitance spectroscopy of multilayer electron systems in wide parabolic wells
- OPTICAL LOGIC IN GaAs FABRY-PEROT ETALONS.
- 100 ps High-contrast Electroabsorptive Waveguide Modulator made from Semiconductor Multiple Quantum Wells(MQWs)
- Manipulating a domain wall in (Ga,Mn)As
- Broadband Terahertz Detection with an Antenna Coupled Zero-Bias Field-Effect Transistor
- Bright MM-Wave and THz Luminescence by Down-Conversion of Near-IR Amplified-Spontaneous-Emission
- 100-psec optical modulation in multiple quantum wells
- Low-voltage AlGaSb/InAs/AlGaSb PnP HBTs
- Temporal evolution of the excitonic distribution function in GaAs/Al 0.33 Ga 0.67 As superlattices
- 280 GHz f/sub T/ InP DHBT with 1.2 /spl mu/m/sup 2/ base-emitter junction area in MBE regrown-emitter technology
- SAW tomography-spatially resolved charge detection by SAW in semiconductor structures for imaging applications
- Room temperature terahertz detection based on electron plasma resonance in an antenna-coupled GaAs MESFET
- Mobility and uniformity of the electron gas in wide parabolic GaAs/AlxGa1−xAs wells
- TRANSIENT THERMAL CHARACTERIZATION OF ERAS/IN0.53GA0.47AS THERMOELECTRIC MODULE
- Exciton-capture mechanism at impurities in GaAs/AlxGa(1−x)As quantum wells
- Spectroscopy studies of highly acceptor doped GaAs/AlGaAs quantum wells
- Lever arm of a metallic tip in scanning gate experiments
- Active metamaterials: A novel approach to manipulate terahertz waves
- Band Mixing in GaAs-(AlGa)As Heterostructures
- Molecular tuning of quantum Hall edge states
- Optical rectification as a probe of quantum dynamics in a heterostructure
- D.C. transport in intense, in-plane terahertz electric fields in AlxGa1−xAs heterostructures at 300 K
- Metamaterials and their THz applications
- Shifting the quantum Hall plateau level in a double layer electron system
- Radiative recombination in modulation-doped GaAs/AlGaAs heterostructures in the presence of an electric field
- Photoluminescence excitation spectroscopy of wide parabolic GaAs/AlGaAs quantum wells
- Nonlinear resonant optical rectification in a coupled quantum well
- High-Performance InP/In Ga As/InP Double HBTs on GaAs Substrates
- Investigation of the spatial variation of scattering centers in parabolic quantum wells
- Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level
- A new THz-photomixer based on a n-i-p-n doping superlattice
- Scaling of Optical Logic Devices and Arrays
- Highly Improved Reliability of Low Threshold 1.3 μm III/V Quantum Dot Laser Epitaxially Grown on On-axis Si
- Thermal conductance magneto-oscillations and electron-phonon coupling in GaAs/AlGaAs heterostructures
- 0.37 mS/μm In0.53Ga0.47As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain
- Attractive and repulsive dipolar interaction in bilayers of indirect excitons
- Performance impact of post-regrowth channel etching on InGaAs MOSFETs having MOCVD source-drain regrowth
- High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors
- Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wells
- Speed and effectiveness of windowless GaAs as optical logic gates
- Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation
- Regenerative pulsations in an optical bistable GaAs etalon
- Cyclotron resonance of 2D electrons in GaAs/AlxGa1−xAs heterostructures at low densities
- High‐Pressure Suppression of the Magnetic State of V2O3: 51V Nuclear Resonance at 4.2°K and 65 kbar
- 1 . 3 μ m submilliamp threshold quantum dot micro-lasers on
- Heterodyne x-ray diffuse scattering from coherent phonons
- Growth and uses of metal/semiconductor heterostructures
- Erratum: Energy-loss rates for hot electrons and holes in GaAs quantum wells [Phys. Rev. Lett. 54, 2045 (1985)]
- Erratum: ``(Ga,Mn)As as a digital ferromagnetic heterostructure'' [Appl. Phys. Lett. 77, 2379 (2000)]
- Blue shifted absorption using field-induced Stark localization in superlattices
- Submilliamp-threshold InGaAs/GaAs quantum-well ridge-waveguide lasers with impurity-induced disordering
- Lasing monolithic microresonator arrays
- Switching Of A GaAs Bistable Etalon: External Switching On And Off, Regenerative Pulsations, Transverse Effects, And Lasing
- Moiré pattern of interference dislocations in condensate of indirect excitons
- Growth, characterization, and applications of self-assembled InGaAs quantum dots
- Comments on "Lasing at Three-Dimensionally Quantum-Confined Sublevel of Self-organized Ino,SGao.SAs Quantum Dots by Current Injection"
- Shake-up intersubband transitions observed in GaAs/AlGaAs quantum wells
- Charging effects of ErAs islands embedded in AlGaAs heterostructures
- Energy relaxation at THz frequencies in AlxGa1-xAs heterostructures
- Thermal conductivity of low-temperature-grown GaAs
- Spectroscopy of coupled one-dimensional subbands
- Observation of large conductance oscillations in a superconducting single electron transistor coupled to a two-dimensional electron gas
- Spectral Blue-Shifts in Optical Absorption and Emission of the 2D Electron System in the Magnetic Quantum Limit
- Coherent superposition of terahertz beams from a phased linear photomixer array
- Anisotropic Thermal Conductivity of the Nanoparticles Embedded GaSb Thin Film Semiconductor.
- Carrier dynamics in self-assembled ErAs nanoislands measured by optical-pump THz-probe spectroscopy
- Terahertz Switch/Modulator Based on Metamaterials
- Hybrid III-V Silicon Quantum Dot and Quantum Well Lasers
- Antenna-boosted mixing of terahertz and near-infrared radiation
- Operation of a GaAs-AlAs optical logic gate fabricated completely by molecular beam epitaxy
- Imaging Electrons in a Single‐Electron Quantum Dot
- Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells
- Unipolar transistor based on charge injection
- Extended polarized semiclassical model for quantum-dot cavity QED and its application to single-photon sources
- Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices
- Influence of HCl etching on the electronic properties of LAO-defined nanostructures
- Dynamics of the inner ring in photoluminescence of GaAs/AlGaAs indirect excitons
- Ultrafast nonequilibrium transport of electrons and holes in GaAs
- INTERBAND MAGNETO-SPECTROSCOPY OF A HIGH-DENSITY TWO-DIMENSIONAL ELECTRON GAS IN A STRONG IN-PLANE MAGNETIC FIELD
- Kinematics of Cold Excitons in the Laser Induced Exciton Trap
- 1 . 3 μm quantum-dot micro-disk lasers directly grown on ( 001 ) silicon
- VB-4 insulated gate field effect transistors with the conduction channel placed at semiconductor-semiconductor interfaces
- Comparison and responsivity improvement of horn- and lens-coupled large area field-effect transistors
- Publisher’s Note: Dynamical Birefringence: Electron-Hole Recollisions as Probes of Berry Curvature [Phys. Rev. X 7, 041042 (2017)]
- Radiative lifetime and dephasing of excitons studied by femtosecond time resolved intersubband spectroscopy
- Excitons in moving lattices
- Carrier Dynamics in ErAs Nanoislands Measured by Optical-Pump THz-Probe Spectroscopy
- Periodic Modulation of the Magnetic Field Scale of Conductance Fluctuations in a Coulomb-Blockaded Quantum Dot
- Summary Abstract: Electrical transport properties of novel semiconductor barriers with graded interfaces
- Detection of 1.6 and 2 THz radiation with a Tunable Antenna-Coupled Intersubband Terahertz (TACIT) detector
- Quantum dot with internal substructure
- Wave function modification via controlled potential perturbation
- Electron Coherence in Quantum Well Intersubband Transitions
- Electron Spin Polarization in GaAs Quantum Wells Measured by Ga Optical Pumping NMR
- THz-emitters based on ballistic transport in semiconductor nanostructures
- Resonant magnetic field induced enhancement of the tunneling current in multi-quantum wells
- Wide graded potential wells: growth, electrical properties and theoretical results
- Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots.
- Summary Abstract: Luminescence properties and structure of GaAs–Ga1−xAlxAs double heterostructure and multiple quantum wells superlattices
- Electro-optical investigations of selectively doped heterostructure transistors (SDHTs)
- Self-assembled ErSb nanostructures of tunable shape and orientation: growth and plasmonic properties
- Bandwidth control of near infrared frequency combs in high-order sideband generation
- Scanned gate microscopy of inter-edge channel scattering in the quantum Hall regime
- Room temperature terahertz detection based on plasma resonance of electrons in an Antenna-Coupled GaAs MESFET
- Control of exciton fluxes
- High-order sideband generation in semiconductors: colliding quasiparticles and probing Berry curvature.
- Strongly correlated photons from single quantum dots in polarization degenerate micropillar cavities
- Electron transport in two-dimensional electron gases of nitride heterostructures
- External switching of an optical bistable GaAs etalon (A)
- Intersubband semiconductor lasers without population inversion
- Integrated non-III-nitride/III-nitride tandem solar cell
- Phonon-Mediated Population Inversion in a Driven Double Quantum Dot
- Scanning Tunneling Microscopy and Spectroscopy of Rare Earth-Monopnictide Nanostructures Embedded in a Semiconducting Matrix
- Room Temperature Optical Nonlinear Absorption and Refraction in GaAs Multiple Quantum Wells
- Experimental analysis of tunneling from a two-dimensional electron gas into the bulk in the presence of strong scattering.
- Photon-assisted tunneling in coupled double quantum wells
- Room-Temperature Bulk GaAs: Dominant Nonlinearities, Fast-Recovery Gates, Arrays for Parallel Processing
- Time Resolved Characterization of Tunneling in a Quantum Dot
- Effects of Dissipation on a Single Electron Transistor in the Strong Tunneling Regime
- Conductance Resonances in a Two-Dimensional Electron Gas Interferometer
- Terahertz near field microscopy of metamaterials
- Microscopic magnetic properties of metallic and insulating V$sub 4$O$sub 7$ and V$sub 7$O$sub 13$
- III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.
- Formation mechanisms of statistically degenerate quasi 2D confined exciton systems
- Indirect excitons in high magnetic fields
- From THz emitters and detectors to THz systems
- High-order sideband generation in semiconductors: Beyond the three step model
- Title Spin Currents in a Coherent Exciton Gas
- High-performance mode-locked lasers on silicon
- Specific Heat and Screening of 2D-Electrons in GaAs
- VA-4 radiative recombination in heterojunction bipolar transistors
- Probing ErAs nanoparticle density of states using capacitance-voltage
- Characterization of Epitaxial Semimetallic ErAs Particles in an In0.53Ga0.47As Matrix by High-Angle Annular Dark-Field Imaging
- Characterizing Electron-Electron Scattering by Imaging Coherent Electron Flow*
- Strong spin relaxation anisotropy in a single-electron quantum dot
- Transport of indirect excitons in a potential energy gradient
- In-Plane Thermoelectric Properties of Epitaxial InGaAlAs Films Embedded with ErAs Nanoparticles
- Telecom-wavelength compatible THz n-i-pn-i-p superlattice photomixers for spectroscopical applications
- Metal-Semiconductor Nanocomposites for High Efficiency Thermoelectric Power Generation
- Electrical Control of Terahertz Metamaterials
- Ballistic transport in nanostructures used for novel THz emitters
- Interference experiments with a coherent tunable THz nipnip superlattice photomixer
- Traveling-Wave Membrane Photomixers
- Open confocal resonators with quasi-optical arrays to measure THz dynamics of quantum tunneling devices
- Summary Abstract: Light scattering spectroscopy of confined carriers in GaAs–AlGaAs heterojunction superlattices
- High Speed and Terahertz Devices
- Multiphoton-assisted tunneling, dynamic localization and absolute negative conductance
- Latched Detection of Excited States in an Isolated Double Quantum Dot
- Coupled one-dimensional subbands in in-plane magnetic fields
- Semimetal-Semiconductor Junctions for Low Noise Zero-Bias Rectifiers
- Spin Texture in a Cold Exciton Gas
- Symmetry effects in broadband, room-temperature field effect transistor THz detectors
- Collective Gaps at Integer Total Filling Factors in a Coupled Double Quantum Well
- Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors
- AFM-defined Antidot Arrays with Tunable Potential Profile
- Terahertz radiation enhancement through use of plasmonic photomixers
- Charge Transitions in a Quantum Dot Induced by an Adjacent Quantum Point Contact
- Comparison of Dynamical Decoupling Schemes in Double Quantum Dot Spin Qubits
- Observation of an insulating to conducting transition in an artificial quantum dot lattice
- Triple reduction of threshold current for $1.3 \mu \mathrm{m}$ in as quantum dot lasers on patterned, on-axis (001) Si
- Dephasing in the presence of a two-dimensional electron gas at high magnetic fields
- Low threshold, high gain 1300 nm quantum dot lasers epitaxially grown on Si
- On-chip 2D Plasmonic Wave Vector Engineering in Si Lens Coupled Terahertz Detectors.
- Enhancement of Spin Coherence in Microdisk Lasers
- Inelastic Light Scattering by the Two Dimensional Electrons in Semiconductor Heterojunction Superlattices
- Inhibited recombination of negatively-charged excitons in GaAs quantum wells at high magnetic fields
- Two dimensional electron transport in modulation-doped In 0 . 53 Ga 0 . 47 As / AlAs 0 . 56 Sb 0 . 44 ultrathin quantum wells
- Ultrafast response of ErAs islands in GaAs
- Enhanced THz emission in ErAs:GaAs
- High power terahertz generation from ErAs: InGaAs plasmonic photomixers
- Novel excitonic transitions in n-type GaAs/AlGaAs quantum wells
- How does a quantum dot interact with a metallic tip
- Room Temperature CW ! " # $ % & $ Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on ( 001 ) Si
- Quantum well structure for a test of intersubband plasma instability
- Observation of magneto-exciton splitting under intense femtosecond laser excitation in high magnetic fields
- Photoinduced intersubband absorption in n-doped quantum wells
- Dirac series experiments in 800T fields
- Scanning Gate Measurements on a Coupled Quantum Dot — Quantum Point Contact System
- Near bandgap photoemission in GaAs ; application to GaAs/GaAlAs 2D structures
- The effects of quenched disorder on high-order sideband gen- eration in GaAs/AlGaAs quantum wells 1 HUNTER BANKS, DARREN
- I-2 new device phenomena based on multiple layer epitaxy
- Real Time Electron Hopping Phenomena in a Single-Electron Transistor
- The Nuclear Environment for Electron Spins in a Double Quantum Dot
- 9 GHz passively mode locked quantum dot lasers directly grown on Si
- InAs Quantum dot Lasers Epitaxially Grown on On-Axis (001) Silicon
- Data underpinning: Intrinsic metastabilities in the charge configuration of a double quantum dot
- Photoconductivity investigation of the excitonic Auger recombination in GaAs/AlGaAs quantum wells
- NMR Measurements of the Magnetic Flux Distribution in Type II Superconductors
- Thermal Electron Wavepacket Interferometry: Derivation and New Results
- Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
- Kinetics of excitons in an optically induced exciton trap
- A Non-Bolometric Model for a Tunable Antenna-Coupled Intersubband Terahertz (TACIT) Detector
- Gating Carrier Spin Dynamics in Coupled Quantum Wells
- III-V semiconductor alloys
- High-speed parallel-field electroabsorption in GaAs/GaAlAs multiple quantum wells
- Growth and fabrication of quantum wells, wires, and dots for optical applications
- Enhanced THz detection using self-assembled ErAs nanoislands
- Spin-orbit and hyperfine interaction mediated spin relaxation in a single electron GaAs quantum dot
- Low turn-on voltage InP/In/sub 0.7/Ga/sub 0.3/As/InP double heterojunction bipolar transistors
- 1.3 μm Tunable Quantum Dot Lasers
- Curie Temperatures above 110K in Annealed (Ga, Mn) As Epilayers
- Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm (Laser Photonics Rev. 14(3)/2020)
- Collection of indirect excitons in a diamond-shaped electrostatic trap
- A fiber coupled source of identical single photons
- Nuclear Polarization and its Influence on Spin Relaxation in Double Quantum Dots
- Electrically Excited Terahertz Emission from Parabolic Quantum Wells
- Integrated Cantilever Magnetometry of (Ga,Mn)As
- Fermi edge singularity in absorption spectra of modulation-doped quantum wells
- Efficient THz Source Using GaAs and InGaAs nipnip Photomixers
- CLUSTER 2 : Nanoscale Building Blocks Period : March 16 , 2007 to March 15 , 2008 Coordinators : Moungi Bawendi and Hongkun Park
- Erratum: “Coulomb Effects in Spatially Separated Electron and Hole Layers in Coupled Quantum Wells”
- Growth and Electrical and Far-Infrared Properties of Wide Electron Wells in Semiconductors
- Epitaxial integration of high-performance quantum-dot lasers on silicon
- Radio frequency charge sensing and nuclear polarization of a two-electron double quantum dot
- Current Switching and Modulation Based on Electron Interference in Electron Waveguides: A Zero Gap Electron Wave Coupler
- The Superconducting Single Electron Transistor: in situ Variation of the Dissipation
- Non-equilibrium dephasing in ballistic interferometers
- Impact Ionization and Avalanche Multiplication in AlGaAs: a Time-Resolved Study
- MAGNETIC ORDERING OF VF3
- Ballistic carrier injection induced electroluminescence of InAs quantum dots in a hot-electron metal-base transistor
- Effects of growth temperature on magnetism in digital ferromagnetic heterostructures
- Suppression of quantum Hall plateaus and nonlinear Landau level fan diagram in a parabolic quantum well
- Dynamical studies of the radiative recombination process in a modulation doped GaAs/AlGaAs heterostructure
- Driving a harmonic quantum oscillator with few-cycle THz pulses
- COUPLED ELECTRON-LO PHONON EXCITATION IN A TWO DIMENSIONAL ELECTRON SYSTEM
- 1 2 A pr 2 00 0 Dipole scattering in polarization induced two-dimensional electron gases
- Molecular beam epitaxy of low-resistance polycrystalline p-type GaSb
- Current switching and modulation based on electron interference in electron waveguides: a zero gap electron wave coupler
- Low Threshold 1.55 μm Quantum Dash Microring Lasers
- Spatially and time resolved kinetics of indirect magnetoexcitons
- Pulsed THz time domain system with ErAs:In(Al)GaAs photoconductors
- Transverse effects in optical bistability: computations anti observations
- Hysteresis, spin transitions, and magnetic ordering in the fractional quantum Hall effect
- GaAs Epitaxy on (001) Si: below 1×106 cm−2 Dislocation Density with 2.4 μm Buffer Thickness
- Broadband and Fast Large-Area Field-Effect Detectors for THz and NIR
- Magnetic resonance in metals: By J. Winter. Oxford University Press, London, 1971. xiii + 206 pp. $17.75
- Low threshold epitaxial InAs quantum dot lasers on on-axis GaP/Si (001)
- Multi‐terminal transport through semi‐conductor quantum dots
- Imaging Coherent Electron Flow in a Two-Dimensional Electron Gas with a Perpendicular Magnetic Field
- The Coulomb Blockade and Spin in a Small Quantum Dot
- For USA-USSR Symposium on Laser Optics of Condensed Matter
- Exciton Confinement in Traps Formed by a Laterally Modulated Gate Voltage
- Mode Conversion and Radiation Loss Caused by Refractive-Index Fluctuations in an Asymmetric Slab Waveguide
- 20 ps temporal resolution of THz pulses recorded with (Al)GaAs high electron mobility transistors
- Magnetooptical Studies of Acceptors Confined in Gaas/Algaas Quantum-Wells
- Two Electron Singlet Triplet Spectroscopy
- Magnetic moment of $sup 181$Ta
- Multiplicative mixing and detection of THz signals with a field effect transistor
- Modification of the Franck-Hertz Experiment
- Gain-current relationships in quantum-dot and quantum-well lasers: theory and experiment
- The Virtual Scanning Tunneling Microscope: A Novel Probe Technique for Imaging Two-Dimensional Electron Systems
- Optical properties of electric field controlled lateral superlattices
- Interplay Between Electron-Electron, Electron-Impurity and Electron-Boundary Scattering in a Two Dimensional Electron Gas (2DEG)
- Characterization and modeling of InGaAs quantum dot lasers
- Lasers without inversion in quantum well intersubband transitions
- Optoelectronic studies of an electrically tunable infrared detector
- Optical Spectroscopy of Defects in GaAs/AlGaAs Multiple Quantum Wells.
- 100 GHz colliding pulse mode locked quantum dot lasers directly grown on Si for WDM application
- 1-µm InAs quantum dot micro-disk lasers directly grown on exact (001) Si
- Room Temperature Terahertz Detection by Rectifying Field Effect Transistors
- The D- bound exciton observed in GaAs/AlGaAs quantum wells
- The effects of quenched disorder on high-order sideband generation in GaAs/AlGaAs quantum wells
- ErAs Enhanced Active Photonic THz Components
- Nonlinear optical susceptibilities of semiconductors and optical bistability
- Spectroscopy, light scattering, photoeffects and related theoryCyclotron and plasmon emission from two-dimensional electrons in GaAs
- Statistics of Conductance Fluctuations in Quantum Dots
- Regenerative pulsations in an optical bistable GaAs etalon
- Thermal Conductivity Reduction in Nanostructured Semiconductor Using Broad-Band-Phonon Scattering
- Polarimetry of THz High-Order Sideband Generation: Towards a Measurement of Berry Curvature
- Far-infrared nonlinear response of electrons in semiconductor nanostructures
- Mode-Locked Quantum Dot Lasers Epitaxially Grown on Si
- Spin transition and anomalous domain dynamics in the fractional quantum Hall effect
- Spontaneous coherence in a cold exciton gas
- 6 Watt Segmented Power Generator Modules using Bi2Te3 and (InGaAs)1-x(InAlAs)x Elements Embedded with ErAs Nanoparticles.
- Terahertz, Photon-Assisted Tunneling in Semiconductor Nanostructures
- Imaging fringes in magnetic focusing of electron waves
- Picosecond carrier dynamics in ErAs:GaAs superlattices
- Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si
- Summary Abstract: The onset of intersubband scattering in a two‐dimensional electron system
- Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface
- UNIVERSITY OF CALIFORNIA, Santa Barbara Probing Self-Assembled ErSb Nanowires using Terahertz Time-Domain Spectroscopy
- Erratum: Optical response of grating-coupler-induced intersubband resonances: The role of Wood’s anomalies [Phys. Rev. B55, 2303 (1997)]
- Detection of Terahertz Light with Intersubband Transitions in Semiconductor Quantum Wells
- Combination of TEM and STEM to Investigate the Self-Assembly of Epitaxial Nanocomposites
- Interactions between Indirect Excitons in Separate Coupled Quantum Wells
- Imaging Coherent Electron Flow in Nanostructures at Low Temperatures using a Scanning Probe Microscope
- Progress toward practical optically bistable devices
- Long lived photoexcited electron-hole pairs in modulation doped GaAs/AlGaAs quantum wells studied by intersubband spectroscopy
- Quantized electronic structure (QUEST)
- Magnetic field perturbation of a shallow acceptor and its bound exciton confined in GaAs/AlGaAs quantum wells.
- Measurements of the bandgap-resonant nonlinear refractive index of bulk and MQW GaAs at room temperature
- Current Biased Real Time Charge Detection in a Single Electron Transistor
- Comparison Of The Optical Nonlinearities Of Bulk GaAs And GaAs/A1GaAs Multiple Quantum Wells
- Investigation of Bi-Exciton Formation in Doped GaAsAlxGa(1-x)as Quantum Wells
- Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells
- Photonic molecules in the Terahertz - mode splitting in coupled dielectric whispering gallery mode resonators
- Spatially resolved kinetics and spatially separated pump-probe studies of transport and thermalization of indirect excitons
- Probing Terahertz Dynamics in Semiconductor Nanostructures with the UCSB Free-electron Lasers
- Probing terahertz electron dynamics in semiconductor nanostructures with the UC Santa Barbara FELs
- Evidence that room-temperature GaAs optical bistability is excitonic (A)
- 400 element ErAs:InGaAs/InGaAlAs superlattice power generator
- ISLC 2016 1-μ m InAs quantum dot micro-disk lasers directly grown on exact ( 001 )
- Interference dislocations in condensate of indirect excitons
- Polarization tuning for high-fidelity fiber-coupled single photon sources
- Efficient CW terahertz generation with n-i-pn-i-p photomixers
- Solid-Solid Interfaces and Superlattices
- Graded and coupled quantum wells for emission of radiation by intersubband emission
- Novel concept for THz-photomixer based on periodically doped heterostructures and quasi ballistic transport
- Nanostructures for Enhanced Electron/Hole Conversion
- Time resolved single electron detection in a quantum dot
- Optoelectronic Terahertz sources based on photomixers
- Strong sub‐bandgap absorption in GaSb/ErSb nanocomposites attributed to plasma resonances of semimetallic ErSb nanoparticles
- Terahertz Quantum Transport in Semiconductor Superlattices and Quantum Wells
- An Electron-Waveguide Y Branch for Current Switching
- Towards a Triple Quantum Dot Molecule: Experiment and Theory
- High-temperature ZT of InGaAlAs Thin Films with Embedded ErAs Nanoparticles
- Telecom-wavelength compatible Terahertz ErAs/III-Vphotoconductors
- Low noise field-effect transistor for integrated strain sensing in microelectromechanical systems at 77 K
- Regrown-emitter InP heterojunction bisucpolar transistors
- Fabrication of a Ferromagnetic Semiconductor Spin Bipolar Transistor
- Nuclear quadrupole interaction in the metallic state of V$sub 2$O$sub 3$
- Coherence and Screening in Multi-Electron Spin Qubits
- Quantum Dot Spectroscopy
- Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate
- A few-electron triple quantum dot incorporating two fast charge sensors
- A diamond trap for indirect excitons in coupled quantum wells
- Gate-Sensing the Potential Landscape of a GaAs Two-Dimensional Electron Gas
- Electrostatic lattices for indirect excitons in coupled quantum wells
- Kondo and Superconducting Proximity Effect in Semiconductor Nanostructures
- Transition to Scarred States Probed by a Single Electron Spectrometer
- Electronic Properties of Binary Intermetallic Compounds with Large Nuclear Moments
- Erratum: Spatially resolved and time-resolved imaging of transport of indirect excitons in high magnetic fields [Phys. Rev. B 95, 235308 (2017)]
- Intersubband scattering as a tool to study the symmetry properties of a parabolic quantum well
- Title: MOCVD growth process and characterization of rare earth nanocomposite embedded in the indium gallium antimonide matrix
- High Performance Graded Quantum Structures: Growth, Applications, Phenomena
- Inhibited Recombination of Charged Excitons in GaAs Quantum Wells at High Magnetic Fields
- Characterization of Macroscopic Ordering in Exciton Rings
- Ballistic transport in semiconductor nanostructures: From quasi-classical oscillations to novel THz-emitters
- GaAs Etalons and Waveguides: Bulk versus Multiple-Quantum-Well Material
- Effects of Confinement on the Optical Properties of a Shallow Acceptor and its Bound Exciton in Narrow GaAs/AIGaAs Quantum Wells
- Observation of heavy-hole minibands in ultra-short period superlattices
- Erratum: “Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems” [Appl. Phys. Lett. 97, 132103 (2010)]
- Excitation spectra of two correlated electrons in a quantum dot
- Overshoot switching and cross talk in optical bistability (A)
- Thermoelectric Power of high concentration embedded Nano-particle Samples
- Effect of Low-Temperature Structural Transformation onV51Knight Shifts and Electric Field Gradients inV3Si
- In Situ Grown Quantum-Wire Lasers
- Determination of the Intrinsic Radiative Lifetime of Quantum Well Excitons by Time-Resolved Intersubband Absorption Excitation Spectroscopy
- Optoelectronic devices
- Oscillations in the Plasma Frequency of Electrons in a Superlattice in a Parabolic Quantum Well
- The electronic structure of the acceptor and its bound exciton in a GaAs/AlGaAs QW
- Electrical transport properties of superlattices under iintense terahertz electric fields
- Growth of Broadband Gain Quantum Dot Mode-Locked Laser on Si with Varied InGaAs Well Thickness
- Radio-Frequency Single-Electron Transistor Coupled to an Electrostatically Defined Quantum Dot
- Control of InGaAs facets using metal modulation epitaxy (MME)
- Time resolved intersubband optical transitions in optically pumped semi conductor lasers
- Images of Coherent Electron Wave Flow in a Two-Dimensional Electron Gas
- Arrayed Telecom-Wavelength Compatible THz n-i-pn-i-p Superlattice Photomixers for Spectroscopy Applications
- Resonance Raman Scattering in Short Period GaAs-AlAs Superlattices
- O-Band Quantum Dot Semiconductor Optical Amplifier Directly Grown on CMOS Compatible Si Substrate
- Optoelectronic Integrated Circuit Technology and Design
- Ultrasmall Semiconductor Microresonators
- Ultra Broadband and Fast FET Detectorsfor THz and NIR at Room-Temperature
- Photon-Assisted Electric Field Domains and Multiphoton-Assisted Tunneling in Antenna Coupled Semiconductor Superlattices
- Splitting of magneto-excitonic plasmas under intense femtosecond excitation in strong magnetic fields
- Metamaterials for the terahertz gap
- AlSb/InAs/InAsP/AlSb composite-channel HFETs
- Anisotropic surface plasma resonance in self-assembled ErSb quantum nanostructures of tunable shape and orientation
- The Interaction of Photoexcited e-h Pairs with a two Dimensional Electron Gas Studied by Intersubband Spectroscopy
- Optical logic on a single etalon
- Double quantum dot with integrated charge readout fabricated by layered SFM‐lithography
- Harmonic Generation by Bloch Oscillation in THz Driven Superlattices in Quasi-Optical Arrays
- Gigahertz manipulation of electron spins in semiconductor nanostructures
- Abstract Submitted for the MAR09 Meeting of The American Physical Society Time-resolved detection of single-electron interference SIMON
- IV. Semiconductor: Electron Spin Manipulation Using Electric Field Modulation of the g-tensor
- Photon Assisted Transport in a Strongly Driven Superlattice
- Opto-electronic integrated-circuit technology and design. Annual report, July 1988-July 1989
- Momentum redistribution times of 2D excitons measured by transient resonantly induced intersubband absorption
- Positive correlation in multi-level transport through a tunable quantum dot
- Universal conductance fluctuations in a parabolic quantum well tunable from two- to three-dimensional behavior
- Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
- Optical bistability in quantum well devices
- 1 2 A ug 2 00 2 Imaging coherent electronwave flow in a two-dimensional electron gas
- Optical bistability at room temperature
- OntheFeasibility offew-THzBipolar Transistors
- High Performance Fabry-perot Transverse Optical Modulators
- Far-Infrared Absorption Linewidths of Intersubband Transitions in GaAs/AlGaAs Quantum Wells^*
- Images of Coherent Electron Flow through a Two-Dimensional Electron Gas
- Diffusion-controlled picosecond carrier dynamics in ErAS:GaAs superlattice
- Abstract of articles to be published in the journal of the physics and chemistry of solidsMagnetic and paramagnetic resonance properties of EuAl4
- Tunable Terahertrz Source
- InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates
- THZ Time-Domain Spectroscopy of Intersubband Plasmons
- Conductance Fluctuations of the Chiral Surface Sheath in the 3D Quantum Hall Effect
- High Quality Three Dimensional Electron Gases in Semiconductors
- Onset of dynamical localization in a semiconductor superlattic
- Ballistic Electron Emission Luminescence of InAs Quantum Dots Embedded in a GaAs/Al x Ga 1− x As Heterostructure
- Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells
- Spontaneous coherence, interaction and kinetics of macroscopically ordered exciton state
- Quantum Dot Avalanche Photodetector on Si Substrate
- Imaging Drift and Diffusion of Accumulation from the Spin Hall Effect
- A Dynamic RAM Cell in PolysiPicon Recrystallized
- A Low-Noise High-Channel-Count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si
- Report on Programme Grant – 1999 – 2003
- Resonant room temperature nonlinear optical processes in GaAs/GaAlAs multiple quantum well structures
- Triple Quantum Dots
- THz emission from parabolically graded quantum wells in tilted magnetic fields
- Surface-normal Fabry-Perot multiquantum well-index modulator
- Quantum Effects At Gaas/Al x Ga 1−x Junctions
- Advances in GaAs bistable optical devices
- The quenching of scattering-enhanced tunneling in the Quantum Hall Regime
- ROOM-TEMPERATURE EXCITONIC OPTICAL BISTABILITY IN BULK GaAs.
- Low Threshold 1.55 μm Quantum Dash Microring Lasers
- Spin currents and polarization textures in optically created indirect excitons
- Mn ion spin dynamics in GaMnAs quantum wells
- Properties of PrPb$sub 3$ in relation to other L1$sub 2$ phases of Pr
- Effects of Multi-pulse Dynamical Decoupling Schemes on Dephasing in a GaAs Spin Qubit
- Magneto-Raman And Magneto-Photoluminescence Characterization Of MQW Heterostructures
- High performance lasers on Si
- Effects of a parallel magnetic field on the Fermi-energy in two-dimensional electron systems
- Spontaneous First-order Optical Coherence in Cold Exciton Gases in Coupled Quantum Wells
- Weak Localization and Dephasing in Chaotic Semiconductor Quantum Dots
- Tunneling spectroscopy of a 2D-2D tunnel junction: Towards a local spectroscopic probe of 2D electron systems
- State and Measurement Tomography of an Exchange-Only Spin Qubit
- Semimetal/Semiconductor Nanocomposites for Thermoelectrics
- Observation of collective and single-particle effects in conductance oscillations in a “quantum donut”
- Indirect Excitons in a Potential Energy Landscape Created by a Perforated Electrode
- High field drift velocities of two-dimensional carriers in GaAs/AlGaAs quantum well structures
- Electronically switchable extraordinary terahertz transmission through metallic hole arrays fabricated on a semiconductor substrate
- Ultrafast voltage-tunable detectors for Terahertz radiation operating above 100K
- Efficient Optical Logic, Interconnections and Processing Using Quantum Confined Structures
- Arrayed Continuous-wave THz Photomixers
- TRAVELING-WAVE PHOTO MIXERS BASED ON NONCOLLINEAR OPTICALITERAHERTZ PHASE MATCHING
- Analysis of strain in InGaAlAs thin-film thermoelectric materials using micro-Raman Spectroscopy
- IIIb-5 properties of alternate-monolayer (GaAs)n(AlAs)mcrystals
- Kinetics of indirect excitons in the optically-induced exciton trap
- THz spectroscopy of self-assembled ErSb nanowires
- Photon storage with ultrafast switching in coupled quantum wells
- Interference between monochromatic Terahertz sources
- Room Temperature Terahertz Detection based on Electron Plasma Resonance in an Antenna-Coupled Gallium Arsenide MESFET
- Highly anisotropic optical properties of single quantum well waveguides
- Carrier Dynamics in Microdisk Photonic Molecules
- Kinetics of Exciton Emission Patterns and Carrier Transport
- Surface Gated Quantum Hall Effect in InAs Heterostructures
- Performance of a 1030 nm driven ErAs: InGaAs photoconductive receiver at high THz average power
- Amplitude suppression of picosecond Terahertz pulses in a FET detector
- Femtosecond dynamics of inter-Landau level excitations of a two dimensional electron gas in the quantum Hall regime
- Low-dark current 10 Gbit / s operation of InAs / InGaAs quantum dot pi-n photodiode grown on on-axis ( 001 ) GaP /
- Spin Engineering in Quantum Well Structures
- Spatially and time-resolved imaging of transport of indirect excitons in high magnetic fields
- Large Bandwidth TDS System using ErAs:InGaAs photoconductor withhighest recorded resistivity and breakdown voltage
- Terahertz Linear and Nonlinear Dynamics in Confined Magnetoexcitons
- Nano-Imprint Patterning of Nanowire Structures for Interconnect Study
- Electron spin relaxation by hyperfine interaction in a double quantum dot
- Signature of Many-Body Localization of Phonons in Strongly Disordered Superlattices.
- High-speed direct modulation of 1.3 μm InAs quantum dot laser grown on on-axis (001) Si substrate
- AFM-defined antidot lattices with top- and back-gate tunability
- Controlling ferromagnetism in GaMnAs by arsenic defect engineering
- SUPPLEMENTAL MATERIAL Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields
- Electrical properties of Er-doped In 0.53 Ga 0.47 As
- Magnetically tuned resonant photon-assisted tunneling
- Properties of the exciton inner ring at ultra-low temperatures and high magnetic fields
- Growth and microstructure of semi-metallic ErAs particles embedded in an In/sub 0.53/Ga/sub 0.47/As matrix
- Imaging V-Shaped Electron Interferometer*
- Ultra-Small Semiconductor Microresonators
- Few-Electron Lateral Quantum Dots
- High-order sideband generation: Effect of optical polarization
- A Single Electron Charge Qubit in the Strong Driving Limit
- Low Temperature Magnetometry Using 100 nm Thick Micromechanical Cantilevers
- The nipnip‐THz‐emitter: photomixing based on ballistic transport
- Semiconductor Qubits Spin Charge Topological Nuclei Optical Electrical
- Tunable far infrared absorption in logarithmically graded quantum wells
- The electronic structure of a shallow acceptor and its bound exciton confined in GaAs/AlGaAs quantum wells
- J ul 2 00 7 Hyperfine-mediated gate-driven electron spin resonance
- Laser induced trapping of excitons in coupled quantum wells
- Interaction and cooling of the indirect excitons in elevated traps
- Confinement engineering of sd exchange interactions in Ga_ 1- x Mn_ x As/ Al_ y Ga_ 1- y As quantum
- Plasmonic photomixers for increased terahertz radiation powers at 1550 nm optical pump wavelength
- Magnetic field symmetry and phase rigidity of the nonlinear conductance in a ring
- Thermal performance of metamorphic double heterojunction bipolar transistors with InP and InAlP buffer layers
- Intrinsic Luminescence of GaAs/AIGaAs Heterojunctions in a Transverse Electric Field
- The effects of confinement on the Be-acceptor in narrow GaAs/AlGaAs quantum wells
- The Virtual Scanning Tunneling Microscope: Induced Tunneling in Bilayer Two-Dimensional Electron Systems
- 1.55 μm photoconductive THz emitters based on ErAs:In0.53Ga0.47As superlattices
- Two-axis Control and Readout of an Exchange-Only Spin Qubit in a GaAs Triple Quantum Dot
- Growth of InAs quantum dot laser structures on silicon
- High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si
- High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides
- VIB-4 hot-electron transport in the base of heterojunction bipolar transistors
- Hot Electron Relaxation and Trapping in Modulation — Doped GaAs/GaAlAs Multiple Quantum Well Heterostructures
- Two-Stage Kondo effect and singlet-triplet crossover in a four-electron artificial atom
- Current-induced spin polarization along spin orbit fields in strained InGaAs
- Investigation of Urbach tail absorption in GaAs quantum wells by two-wavelength modulation spectroscopy
- Resonant Microwave Control of a Symmetric Exchange-Only Spin Qubit
- Dynamical nonlinear optics and bistability
- Experimental test of Fluctuation Theorem in a quantum coherent conductor
- Excitonic switches at 100 K temperatures
- Nuclear and ion spins in semiconductor nanostructures
- Gain Characterization and Parameter Extraction of 1.3 μm InAs Quantum Dot Lasers on Silicon
- Coulomb Blockade Imaging of Few-Electron Quantum Dots in a Magnetic Field
- Gaas-Alas Monolithic Microresonator Arrays
- Dynamical birefringence: High-order sideband generation as a probe of Berry curvature
- Spin coherence in Multi-electron GaAs double dots
- Plasma oscillations of layered electron gases in semiconductor heterostructures
- Raman investigation of strong quasi-direct optical transitions in ultrathin GaAsAIAs superlattices
- Intersubband Tunneling without Intrasubband Relaxation in Multi-quantum Wells
- Spectroscopy of a GaAs Double Dot Qubit with Dispersive Readout
- Pancharatnam-Berry Phase in a Condensate of Indirect Excitons
- Local 2D-2D tunneling in high mobility electron systems
- Mesoscopic fluctuations of tunneling and cotunneling in quantum dots
- 0 Dislocation scattering in a two dimensional electron gas
- THz Charge Oscillations in a Modulation Doped Parabolic Quantum Well
- Direct-to-indirect band gap conversion by application of electric field in the GaSbAlSb quantum well system
- Segmented Power Generator Modules of Bi2Te3 and ErAs:InGaAlAs Embedded with ErAs Nanoparticles
- Zeeman Splitting in Quantum Dots
- All-optical excitonic switch
- Momentum Space Redistribution of Resonantly Photoexcited Excitons in GaAs/AlGaAs Superlattices
- Continuous-Wave Terahertz System with 50 dB Dynamic Range at 1 THz Using a n-i-pn-i-p Superlattice Photomixer and an ErAs: InGaAs Photoconductor Operated at 1550 nm
- Ballistic electron emission microscopy (BEEM) studies of GaInP/GaAs heterostructures
- Effect of Time Reversal Symmetry Breaking on Non-Linear Transport in a Ballistic GaAs Quantum Dot

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