Gerald Pearson
#12,909
Most Influential Person Across History
American physicist
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Physics
Gerald Pearson's Degrees
- PhD Physics University of Chicago
Why Is Gerald Pearson Influential?
(Suggest an Edit or Addition)According to Wikipedia, Gerald L. Pearson was a physicist whose work on silicon rectifiers at Bell Labs led to the invention of the solar cell. In 2008, he was inducted into the National Inventors Hall of Fame. Biography Pearson was born in Salem, Oregon. He took a bachelor's degree in mathematics and physics from Willamette University and a master's degree in physics from Stanford University. From 1929 he worked as a research physicist at Bell Labs and his early work on temperature-sensitive resistors led to 13 patents on thermistors. After World War II he was part of William Shockley's group, where his experimental results were essential in developing models of semiconductor behaviour. In 1946, acting on a suggestion by Shockley he put a voltage on a droplet of glycol borate placed across a P-N junction producing the first evidence of power amplification in the search for the transistor.
Gerald Pearson's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power (1954) (1527)
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus (1949) (709)
- Deformation and fracture of small silicon crystals (1957) (281)
- Properties of vacancy defects in GaAs single crystals (1975) (259)
- Modulation of Conductance of Thin Films of Semi-Conductors by Surface Charges (1948) (186)
- Effect of Dislocations on Breakdown in Silicon p-n Junctions (1958) (158)
- Dislocations in Plastically Deformed Germanium (1954) (144)
- Properties and Uses of Thermistors--- Thermally Sensitive Resistors (1946) (120)
- Crystal-field spectra of 3d super n impurities in II-VI and III-V compound semiconductors. (1967) (120)
- The Magneto-Resistance Effect in Oriented Single Crystals of Germanium (1951) (115)
- Infrared Reflection Spectra of Ga1-xAlxAs Mixed Crystals (1970) (113)
- Ohmic Contacts to Solution‐Grown Gallium Arsenide (1969) (105)
- Annealing and Arsenic Overpressure Experiments on Defects in Gallium Arsenide (1966) (100)
- Powder-pattern techniques for delineating ferroelectric domain structures (1959) (94)
- Internal Field Emission at Narrow Silicon and Germanium p-n Junctions (1960) (94)
- Spin Resonance of Donors in Silicon (1954) (89)
- Phase diagram, crystal growth, and band structure of InxGa1-xAs (1971) (88)
- Properties of Gallium Arsenide Diodes between 4.2° and 300°K (1965) (80)
- Theory and Experiment for a Germanium p − n Junction (1951) (79)
- Hyperfine Splitting in Spin Resonance of Group V Donors in Silicon (1954) (77)
- Recombination in Plastically Deformed Germanium (1957) (74)
- Anisotropic Mobilities in Plastically Deformed Germanium (1959) (73)
- A simplified model for graded-gap heterojunctions (1975) (73)
- History of Semiconductor Research (1955) (70)
- Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion Experiments (1964) (64)
- Hole injection in germanium - Quantitative studies and filamentary transistors (1949) (64)
- The Effects of Pressure and Temperature on the Resistance of p-n Junctions in Germanium (1951) (57)
- Shallow Donor States in Semiconducting CdF2 (1974) (57)
- Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAs☆ (1975) (56)
- Pressure Dependence of the Resistivity of Silicon (1955) (55)
- Deep trapping effects at the GaAs‐GaAs : Cr interface in GaAs FET structures (1978) (52)
- Diffusion of sulfur in gallium phosphide and gallium arsenide (1969) (51)
- Silicon P-N Junction Alloy Diodes (1952) (51)
- The Al-Ga-Sb ternary phase diagram and its application to liquid phase epitaxial growth (1977) (49)
- Spontaneous resistance fluctuations in carbon microphones and other granular resistances (1936) (47)
- MICROWAVE OSCILLATIONS IN GaAsxP1‐x ALLOYS (1965) (44)
- Diffusion and Solubility of Zinc in Gallium Phosphide Single Crystals (1964) (44)
- Properties and uses of thermistors — Thermally sensitive resistors (1946) (44)
- Study of the long-wavelength optic phonons in Ga 1 − x Al x Sb (1975) (40)
- Time‐Dependence of Zinc Diffusion in Gallium Arsenide under a Concentration Gradient (1971) (39)
- Diffusion of zinc in gallium arsenide under excess arsenic pressure. (1967) (37)
- A magnetic field strength meter employing the Hall effect in germanium. (1948) (37)
- Gamma‐Radiation Damage in Epitaxial Gallium Arsenide (1972) (35)
- Magneto-resistance effect and the band structure of single crystal silicon (1954) (34)
- The Magnetoresistance Effect in InSb (1953) (34)
- Properties of GaP Schottky barrier diodes at elevated temperatures (1969) (33)
- Isothermal LPE growth of thin graded band‐gap AlxGa1−xAs layers (1979) (32)
- The solubilities and distribution coefficients of Zn in GaAs and GaP (1964) (31)
- Absorption spectrum of nickel in gallium phosphide. (1968) (26)
- Rectification in AlxGa1-xAs-GaAs N-n heterojunction devices (1981) (25)
- Fluctuation noise in vacuum tubes (1934) (25)
- Gunn Domain Dynamics (1966) (24)
- CHANGES IN CONDUCTIVITY OF GERMANIUM INDUCED BY ALPHA-PARTICLE BOMBARDMENT (1950) (24)
- Magnetoconductive correction factors for an isotropic Hall plate with point sources (1966) (22)
- Zinc Diffusion into Gallium Phosphide under High and Low Phosphorus Overpressure (1969) (22)
- Gunn oscillations in indium arsenide (1966) (22)
- Velocity saturation in n‐type AlxGa1−xAs single crystals (1974) (20)
- Gas phase equilibria in the system Ga-As-Zn. (1967) (19)
- Probing the Space-Charge Layer in a p-n Junction (1952) (19)
- Correlation of Geiger Counter and Hall Effect Measurements in Alloys Containing Germanium and Radioactive Antimony 124 (1950) (19)
- Phase Studies in III-IV, II-VI, and IV-VI Compound Semiconductor Alloy Systems (1975) (19)
- Effect of the Donor Concentration on the Green Electroluminescence from Gallium Phosphide Diodes (1970) (18)
- Growth and properties of graded band‐gap AlxGa1−xAs layers (1979) (18)
- Surface melt patterns on silicon (1958) (17)
- Growth of Semi‐Insulating LPE GaAs for FET Buffer Layers (1978) (16)
- Diffusion in Semiconductors (1975) (15)
- Auger depth profiling of Au–AlxGa1−xAs interfaces and LPE AlxGa1−xAs–GaAs heterojunctions (1977) (15)
- Noise in Silicon p‐n Junction Photocells (1956) (15)
- Rare Earths in Covalent Semiconductors: the Thulium‐Gallium Arsenide System (1964) (15)
- Effect of variation of energy minima separation on Gunn oscillations (1966) (14)
- Growth and properties of semi‐insulating epitaxial GaAs (1975) (14)
- Dark current reduction in AlxGa1−xAs‐GaAs heterojunction diodes (1981) (14)
- Evidence for two channel excitation of luminescence in CdF2:Mn (1974) (13)
- Temperature Dependence of the Effective Diffusion Coefficient for Zinc in Gallium Arsenide (1971) (13)
- Electron diffusion lengths in liquid‐phase epitaxial p‐GaAs:Ge layers determined by electron‐beam‐induced current method (1982) (13)
- Effects of Uniaxial Stress on the Electrical Resistivity and the Gunn Effect inn-Type GaAs (1970) (12)
- Comment on Mobility Anomalies in Germanium (1950) (12)
- Forward and Reverse Tunnel Currents in Gallium Phosphide Diffused p‐n Junctions (1970) (12)
- The Formation of Metallic Bridges Between Separated Contacts (1939) (11)
- Effects of gamma radiation on Gunn diodes (1970) (10)
- Improved ohmic contacts to n-type GaP devices* (1971) (10)
- Preparation and properties of Au-/n/AlxGa1-xAs-/n/GaAs Schottky barrier solar cells (1979) (10)
- Current‐voltage characteristics of AlxGa1−xAs Schottky barriers and p‐n junctions (1981) (10)
- Auger profiling studies of LPE n‐AlxGa1−xAs–n‐GaAs heterojunctions and the absence of rectification (1978) (9)
- HALL MEASUREMENTS USING CORBINO‐LIKE CURRENT SOURCES IN THIN CIRCULAR DISKS (1964) (9)
- Studies of photoluminescence in GaAs1−xPx mixed crystals (1971) (8)
- Near infrared properties of CdF2:ScF3 (1973) (8)
- "Band readjustment" effect with applications to solar cells (1980) (8)
- Grown junction GaAs solar cells with a thin graded band-gap AlxGa1−xAs surface layer (1980) (7)
- Experimental verification of Cr2+ models of photoluminescent transitions in GaAs:Cr and AlxGa1−xAs:Cr single crystals (1978) (7)
- Carrier and Zinc Concentrations for Zinc Diffusion in Gallium Arsenide (1972) (7)
- The physics of electronic semiconductors (1947) (6)
- The Magnetic Susceptibility of Sodium in Liquid Ammonia Solutions at Low Temperatures (1947) (6)
- Shot Effect and Thermal Agitation in an Electron Current Limited by Space Charge (1935) (6)
- Effects of Zn cross diffusion on the properties of n (AlxGa1−xAs) ‐p (GaAs) heterojunctions (1975) (6)
- Properties of Cr deep levels in Al x Ga 1 − x As :Cr (1979) (5)
- High‐Speed Switching Diodes from Plastically Deformed Germanium (1959) (5)
- Erratum: Electrical Properties of Pure Silicon and Silicon Alloys (1950) (5)
- A high speed current-limiting device from GaAs x P 1-x (1967) (5)
- Grown junction GaAs solar cell (1976) (3)
- Applications of ternary III-V compounds to high-speed microwave modulation (1975) (3)
- A high-speed bulk semiconductor microwave switch utilizing GaAs 1-x P x mixed crystals (1972) (3)
- Lattice vibration spectra of GaAs sub x P sub 1 sub -x single crystals. (1966) (2)
- Mechanical Properties of Intermetallic Compounds. (1960) (2)
- An analysis of the superinjection phenomenon in heterostructure devices (1975) (2)
- Erratum: Velocity saturation in n−type AlxGa1−xAs single crystals (1975) (1)
- Concentration of Zinc in Gallium Arsenide Crystals Grown by Slowly Cooling Gallium‐Rich Solutions (1971) (1)
- Microwave oscillations in GaAs x P 1-x alloys (1965) (1)
- Diffusion in Solids: P. G. Shewmon: McGraw-Hill, New York 1963. pp. 200. $9.50 (1964) (1)
- The application of crystal field theory to the electrical properties of Co impurities in GaP. (1966) (1)
- Defects in as-grown and annealed AlxGa1−xAs single crystals (1979) (1)
- RELATIVE PROBABILITIES OF THE IONIZATION OF K AND L ELECTRONS OF EQUAL IONIZATION ENERGY. (1)
- The electrical and metallurgical properties of defects in compound semiconductors (1982) (0)
- Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide Quarterly progress report, 1 Apr. - 30 Jun. 1969 (1968) (0)
- Gallium phosphide devices for use at high temperatures. (1968) (0)
- MP-B7 dark-current reduction in heterojunction diodes (1980) (0)
- Ternary phase diagrams for the Ga-P-Zn and Ga-As-Zn systems with applications to diffusion problems (1966) (0)
- Observations of the transition from Gunn mode to LSA mode (1967) (0)
- TP-A3 interaction of closely spaced junctions (1979) (0)
- Methods for Joining Very Fine Wires (1936) (0)
- Junction photo-element for converting solar radiation into electrical energy (1955) (0)
- DEFECT STRUCTURES IN QUENCHED AND ANNEALED GAAS CRYSTALS (1964) (0)
- Transition metal impurities in semiconductors (1967) (0)
- Signature of the LSA mode (1967) (0)
- THE ALUMINUM-GALLIUM-ANTIMONY TERNARY PHASE DIAGRAM AND ITS APPLICATION TO LIQUID PHASE EPITAXIAL GROWTH (1977) (0)
- The Physics of Electronic Semiconductors (1947) (0)
- BIBLIOGRAPHY ON DIFFUSION OF IMPURITY ELEMENTS IN COMPOUND SEMICONDUCTORS (1961) (0)
- Fundamentals of Semiconductor Devices. Joseph Lindmayer and Charles Y. Wrigley. Van Nostrand, Princeton, N. J., 1965. x + 486 pp. Illus. $11.95 (1965) (0)
- GROWTH OF SEMI-INSULATING LPE GALLIUM ARSENIDE FOR FET BUFFER LAYERS (1979) (0)
- The effects of uniaxial stress on the electrical resistivity of n-type boat grown and liquid epitaxial GaAs (1968) (0)
- Field dependence of drift velocity of the 〈100〉 electrons in GaAs (1966) (0)
- Preparation and physical properties of GaAs-AlAs solid solutions (1970) (0)
- Electrical Engineering: Fundamentals of Semiconductor Devices . Joseph Lindmayer and Charles Y. Wrigley. Van Nostrand, Princeton, N. J., 1965. x + 486 pp. Illus. $11.95. (1965) (0)
- Crystal growth, phase diagram and bandgap evaluation of AlxGa1-xSb (1975) (0)
- Auger profiling of 'abrupt' LPE Al/x/Ga/1-x/As-GaAs heterojunctions. [Liquid Phase Epitaxy] (1977) (0)
- Abstracts of articles to be published in the journal of the physics and chemistry of solidsGas phase equilibria in the system Ga-As-Zn (1967) (0)
- Microwave oscillations in gaas sub x p sub 1 sub -x alloys. (1965) (0)
- Ohmic Contacts to GaP Devices for Use at High Temperatures (1970) (0)
- Auger depth profiling of Au-Al/x/Ga/1-x/As interfaces and LPE Al/x/Ga/1-x/As-GaAs heterojunctions. [Liquid Phase Epitaxy] (1977) (0)
- Preparation and Properties of Al(x)Ga(1-4)As:Cr Single Crystals. (1980) (0)
- Electrical Engineering. (Book Reviews: Fundamentals of Semiconductor Devices) (1965) (0)
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