Asen Asenov | Academic Influence

Asen Asenov's AcademicInfluence.com Rankings

Asen Asenov

Business

#699

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#769

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Entrepreneurship

#28

World Rank

#28

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business Degrees

Asen Asenov

Engineering

#4711

World Rank

#5923

Historical Rank

Applied Physics

#1239

World Rank

#1268

Historical Rank

engineering Degrees

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Business
Engineering

Asen Asenov's Degrees

PhD Microelectronics Technical University, Sofia
Masters Electrical Engineering Technical University, Sofia
Bachelors Electrical Engineering Technical University, Sofia

Why Is Asen Asenov Influential?

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According to Wikipedia, Asen Asenov is a Bulgarian scientist and entrepreneur in the field of microelectronics and device modelling and has focused on Technology Computer Aided design . Currently he is the James Watt Chair in Electrical Engineering at the University of Glasgow and the Leader of the Glasgow Device Modeling Group.

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Asen Asenov's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study (1998) (670)
Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness (2003) (605)
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs (2003) (586)
Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs (2006) (290)
Statistical variability and reliability in nanoscale FinFETs (2011) (264)
RTS amplitudes in decananometer MOSFETs: 3-D simulation study (2003) (246)
Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study (2001) (237)
Design and fabrication of memory devices based on nanoscale polyoxometalate clusters (2014) (237)
Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations (2002) (221)
Si/SiGe heterostructure parameters for device simulations (2004) (150)
Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture (2007) (145)
Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-/spl mu/m MOSFET's with epitaxial and /spl delta/-doped channels (1999) (145)
Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$ (2007) (142)
A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs (2007) (135)
Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study (2011) (134)
Simulation of Statistical Variability in Nano MOSFETs (2007) (132)
Where Do the Dopants Go? (2005) (118)
Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter (2002) (107)
Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study (2010) (103)
Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells (2005) (101)
The impact of random doping effects on CMOS SRAM cell (2004) (95)
Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET (2008) (95)
Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0 . 1m MOSFET ’ s with Epitaxial and-Doped Channels (1999) (84)
Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs (2012) (81)
Hierarchical approach to "atomistic" 3-D MOSFET simulation (1999) (79)
Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering (2008) (77)
Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability (2008) (75)
Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFETs with ultrathin gate oxide (2000) (74)
RANDOM DOPANT INDUCED THRESHOLD VOLTAGE LOWERING AND FLUCTUATIONS IN SUB 50 NM MOSFETS: A STATISTICAL 3D 'ATOMISTIC' SIMULATION STUDY (1999) (73)
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors (2011) (65)
Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP (2010) (65)
Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study (2009) (65)
Simulation Study of Dominant Statistical Variability Sources in 32-nm High- $\kappa$/Metal Gate CMOS (2012) (60)
Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study (2009) (59)
Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques (2009) (57)
High Mobility III-V MOSFETs For RF and Digital Applications (2007) (56)
Origin of the Asymmetry in the Magnitude of the Statistical Variability of n- and p-Channel Poly-Si Gate Bulk MOSFETs (2008) (56)
Scaling of pseudomorphic high electron mobility transistors to decanano dimensions (2002) (56)
Impact of Random Dopant Fluctuation on Bulk CMOS 6-T SRAM Scaling (2006) (54)
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors (2011) (53)
Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs (2013) (52)
Impact of NBTI/PBTI on SRAM Stability Degradation (2011) (51)
Towards polyoxometalate-cluster-based nano-electronics. (2013) (51)
Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants (2010) (50)
Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions (2012) (49)
The "gated-diode" configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation (1995) (49)
The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices (2002) (48)
Complete Monte Carlo RF analysis of "real" short-channel compound FET's (1998) (48)
Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers (2001) (48)
Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs (2001) (46)
Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study (2010) (46)
Quantum corrections in the simulation of decanano MOSFETs (2003) (46)
Understanding LER-Induced MOSFET $V_{T}$ Variability—Part I: Three-Dimensional Simulation of Large Statistical Samples (2010) (43)
Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization (2015) (41)
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs (2005) (41)
Low power, high density CMOS 6-T SRAM cell design subject to 'atomistic' fluctuations (2007) (41)
Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs (1996) (41)
The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes (2012) (41)
Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET (2010) (39)
NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants (2011) (37)
Advanced simulation of statistical variability and reliability in nano CMOS transistors (2008) (37)
Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors (2011) (37)
Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric (2011) (37)
Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs (1999) (36)
Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors (2019) (36)
Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs (2010) (35)
Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks (2007) (35)
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review (2014) (34)
Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects (2005) (34)
3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs (2007) (34)
Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs (2008) (33)
Comparative Simulation Analysis of Process-Induced Variability in Nanoscale SOI and Bulk Trigate FinFETs (2013) (32)
Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM (2017) (32)
A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters (2017) (32)
Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State (2013) (32)
The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs (2004) (31)
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor (2009) (31)
AN APPROACH BASED ON BROWNIAN MOTION FOR THE SIMULATION OF ULTRASMALL SEMICONDUCTOR DEVICES (1996) (31)
Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis (2013) (31)
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures (2010) (30)
Integrated atomistic process and device simulation of decananometre MOSFETs (2002) (30)
Capacitance fluctuations in bulk MOSFETs due to random discrete dopants (2008) (29)
Review of Current Status of III-V MOSFETs (2009) (29)
A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures (2002) (28)
Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG (2012) (28)
Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study (2000) (28)
Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory (2011) (28)
Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations (2003) (28)
Si–SiO2 interface band‐gap transition – effects on MOS inversion layer (2008) (27)
New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation (2013) (27)
Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs (2015) (27)
A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits (2015) (27)
Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs (2013) (27)
RTS amplitude distribution in 20nm SOI finFETs subject to statistical variability (2012) (27)
Impact of Fermi level pinning at polysilicon gate grain boundaries on nano-MOSFET variability: A 3-D simulation study (2006) (26)
Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond (2015) (26)
Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants (2008) (26)
The Impact of Random Dopant Aggregation in Source and Drain on the Performance of Ballistic DG Nano-MOSFETs: A NEGF Study (2007) (26)
Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs (2009) (25)
Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides (2000) (24)
Finite element Monte Carlo simulation of recess gate compound FFTs (1996) (24)
3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity (2014) (23)
Random Impurity Scattering Induced Variability in Conventional Nano-Scaled MOSFETs: Ab initio Impurity Scattering Monte Carlo Simulation Study (2006) (23)
Self-consistent particle simulation of ion channels (2005) (23)
Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature (2012) (23)
Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design (2012) (23)
1 μm gate length, In 0.75 Ga0.25 As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μm (2008) (23)
Nanowire transistor solutions for 5nm and beyond (2016) (22)
Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-Equilibrium Greens Function calibration (2002) (22)
Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs (1990) (22)
Bipolar quantum corrections in resolving individual dopants in ‘atomistic’ device simulation (2003) (22)
Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study (2009) (22)
Spin dependent recombination in Pt‐doped silicon p‐n junctions (1992) (22)
Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study (2013) (22)
3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET (2013) (21)
Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS Technology (2014) (21)
Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study (2007) (21)
Impact of strain on the performance of high-k/metal replacement gate MOSFETs (2009) (21)
Intrinsic parameter fluctuations in nanometre scale thin-body SOI devices introduced by interface roughness (2003) (21)
Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo (2011) (21)
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs (2009) (21)
Potential fluctuations in metal–oxide–semiconductor field-effect transistors generated by random impurities in the depletion layer (2002) (21)
Investigation of resistance switching in SiOx RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator (2018) (20)
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study (2013) (20)
Hierarchical Simulation of Statistical Variability: From 3-D MC With “ ab initio” Ionized Impurity Scattering to Statistical Compact Models (2010) (20)
Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability (2013) (20)
Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions (2014) (20)
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology (2013) (20)
FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO (2015) (20)
Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs? (2002) (20)
Understanding LER-induced statistical variability: A 35,000 sample 3D simulation study (2009) (20)
Monte Carlo simulations of III–V MOSFETs (2004) (19)
Meeting the design challenges of nanoCMOS electronics (2007) (19)
Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis (2003) (19)
RC Variability of Short-Range Interconnects (2009) (19)
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors (2015) (19)
Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs (2013) (18)
Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels (2017) (18)
Study of RF Linearity in sub-50 nm MOSFETs Using Simulations (2003) (18)
Monte Carlo Simulations of High-Performance Implant Free In$_{0.3}$Ga $_{0.7}$As Nano-MOSFETs for Low-Power CMOS Applications (2007) (18)
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’ simulation (2012) (18)
Impact of scattering in ‘atomistic’ device simulations (2005) (18)
PBTI/NBTI-Related Variability in TB-SOI and DG MOSFETs (2010) (18)
Band offsets in III-nitride heterostructures (2002) (18)
NESS: new flexible Nano-Electronic Simulation Software (2018) (17)
Impact of Individual Charged Gate-Oxide Defects on the Entire $I_{D}$–$V_{G}$ Characteristic of Nanoscaled FETs (2012) (17)
Statistical Nano CMOS Variability and Its Impact on SRAM (2010) (17)
Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions (2004) (17)
Modeling and simulation of transistor and circuit variability and reliability (2010) (17)
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors (2019) (17)
Statistical Device Variability and Its Impact on Design (2008) (17)
Impact of High-κ Gate Stacks on Transport and Variability in Nano-CMOS Devices (2008) (16)
Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications (2017) (16)
Efficient three‐dimensional parallel simulations of PHEMTs (2005) (16)
Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction (2010) (16)
Problems With the Continuous Doping TCAD Simulations of Decananometer CMOS Transistors (2014) (16)
Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET (2008) (16)
Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization (2015) (16)
Understanding LER-Induced MOSFET $V_{T}$ Variability—Part II: Reconstructing the Distribution (2010) (16)
Capacitance variability of short range interconnects (2008) (16)
Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging (2016) (16)
Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications (2005) (16)
Simulation of statistical aspects of reliability in nano CMOS transistors (2009) (16)
Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology (2013) (16)
Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM (2015) (16)
A study of the effect of the interface roughness on a DG-MOSFET using a full 2D NEGF technique (2005) (15)
Advanced physical modeling of SiOx resistive random access memories (2016) (15)
Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs (2004) (15)
A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology (2016) (15)
Low-Power Z2-FET Capacitorless 1T-DRAM (2017) (15)
Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations (2008) (15)
Impact of STI on Statistical Variability and Reliability of Decananometer MOSFETs (2011) (15)
Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors (2010) (15)
Modelling circuit performance variations due to statistical variability: Monte Carlo static timing analysis (2011) (15)
Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS: A statistical simulation study (2006) (15)
The evolution of standard cell libraries for future technology nodes (2011) (14)
Impact of Intrinsic Parameter Fluctuations on SRAM Cell Design (2006) (14)
A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET (2009) (14)
Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET (2009) (14)
${Z}^{\textsf {2}}$ -FET as Capacitor-Less eDRAM Cell For High-Density Integration (2017) (14)
A general approach for multivariate statistical MOSFET compact modeling preserving correlations (2011) (14)
Indication of velocity overshoot in strained Si0.8Ge0.2 p-channel MOSFETs (2000) (14)
Simulation of combined sources of intrinsic parameter fluctuations in a 'real' 35 nm MOSFET (2005) (14)
Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation (2003) (14)
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study (2013) (14)
Statistical enhancement of combined simulations of RDD and LER variability: What can simulation of a 105 sample teach us? (2009) (14)
Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal–Oxide Storage (2014) (13)
Hot-carrier degradation monitoring in LDD n-MOSFETs using drain gated-diode measurements (1991) (13)
Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS (2014) (13)
Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM (2013) (13)
Benchmarking statistical compact modeling strategies for capturing device intrinsic parameter fluctuations in BSIM4 and PSP (2010) (13)
Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale nMOSFETs (2017) (13)
Erratum for ‘1 µm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm’ (2008) (13)
Beyond SiO2 technology: Simulation of the impact of high-κ dielectrics on mobility (2007) (13)
Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation (2006) (13)
Modelling of InP HEMTs with high indium content channels (2005) (13)
Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis (2010) (13)
3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors (2014) (13)
Evaluation of intrinsic parameter fluctuations on 45, 32 and 22nm technology node LP N-MOSFETs (2008) (13)
Effect of single-electron interface trapping in decanano MOSFETs: A 3D atomistic simulation study (2000) (13)
A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects (2017) (13)
GATE RECESS ENGINEERING OF PSEUDOMORPHIC IN0.30GAAS/GAAS HEMTS (1996) (13)
Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation (2007) (12)
Statistical Enhancement of the Evaluation of Combined RDD- and LER-Induced $V_{T}$ Variability: Lessons From $\hbox{10}^{5}$ Sample Simulations (2011) (12)
Time-dependent variation: A new defect-based prediction methodology (2014) (12)
New approach for understanding “random device physics” from channel percolation perspectives: Statistical simulations, key factors and experimental results (2016) (12)
Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study (1999) (12)
Towards a Grid-Enabled Simulation Framework for Nano-CMOS Electronics (2007) (12)
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform (2020) (12)
Simulation of strain enhanced variability in nMOSFETs (2008) (12)
Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator (2007) (12)
Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices (2019) (12)
Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications (2019) (11)
Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors (2019) (11)
Impact of Cell Shape on Random Telegraph Noise in Decananometer Flash Memories (2012) (11)
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories (2013) (11)
Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants (2006) (11)
Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study (2018) (11)
Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors (2008) (11)
Progress on carbon nanotube BEOL interconnects (2018) (11)
Speed-Up of Scalable Iterative Linear Solvers Implemented on an Array of Transputers (1994) (11)
Excessive Over-Relaxation Method for Multigrid Poisson Solvers (2002) (10)
Electron and Hole Current Characteristics of n-i-p-Type Semiconductor Quantum Dot Transistor (2007) (10)
Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project (2007) (10)
Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances—Part I: Pristine MWCNT (2018) (10)
Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study (2016) (10)
Drain Current Collapse in Nanoscaled Bulk MOSFETs Due to Random Dopant Compensation in the Source/Drain Extensions (2011) (10)
Process Variability for Devices at and beyond the 7 nm Node (2018) (10)
Monte Carlo simulations of InGaAs nano-MOSFETs (2007) (10)
The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations (2007) (10)
Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters (2009) (10)
MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections (2018) (10)
A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method (2010) (10)
UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation (2005) (10)
New Evidence for Velocity Overshoot in a 200 nm Pseudomorphic HEMT (1995) (10)
3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER (2001) (10)
Impact of high-/spl kappa/ dielectric HfO/sub 2/ on the mobility and device performance of sub-100-nm nMOSFETs (2005) (10)
Stochastic analysis of surface roughness models in quantum wires (2018) (9)
Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs (2012) (9)
Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI (2011) (9)
Statistically reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs (1998) (9)
Thorough Understanding of Retention Time of Z2FET Memory Operation (2019) (9)
Random discrete dopant induced variability in negative capacitance transistors (2018) (9)
Predicting future technology performance (2013) (9)
Statistical distribution of RTS amplitudes in 20nm SOI FinFETs (2012) (9)
Statistical variability study of a 10nm gate length SOI FinFET device (2012) (9)
3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs (2013) (9)
Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs (2013) (9)
Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances—Part II: Impact of Charge Transfer Doping (2018) (9)
Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs (2000) (9)
Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET (2013) (9)
Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study (2018) (9)
Comprehensive ‘atomistic’ simulation of statistical variability and reliability in 14 nm generation FinFETs (2015) (9)
Multivariate Modeling of Variability Supporting Non-Gaussian and Correlated Parameters (2016) (9)
Influence of Transistors With BTI-Induced Aging on SRAM Write Performance (2015) (9)
Ballistic Quantum Simulators for Studying Variability in Nanotransistors (2008) (9)
Nanowire MOSFET variability : a 3 D density gradient versus NEGF approach (2007) (9)
Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications (2007) (9)
Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches (2014) (9)
Secure, Performance-Oriented Data Management for nanoCMOS Electronics (2008) (9)
Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations (2014) (8)
On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects (2016) (8)
New insights into the near-threshold design in nanoscale FinFET technology for sub-0.2V applications (2016) (8)
Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism (2019) (8)
Finite Element Monte Carlo Simulation of Recess Gate FETs (1995) (8)
Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure (2011) (8)
Unified compact modelling strategies for process and statistical variability in 14-nm node DG FinFETs (2013) (8)
2D-TCAD simulation on retention time of Z2FET for DRAM application (2017) (8)
Simultaneous simulation of systematic and stochastic process variations (2014) (8)
Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices (2001) (8)
3D Parallel Simulations of Fluctuation Effects in pHEMTs (2003) (8)
Impact of Randomly Distributed Dopants on $\Omega$ -Gate Junctionless Silicon Nanowire Transistors (2018) (8)
Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs (2009) (8)
Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium (2010) (8)
Self-aligned 0.12 /spl mu/m T-gate In/sub .53/Ga/sub .47/As/In/sub .52/Al/sub .48/As HEMT technology utilising a non-annealed ohmic contact strategy (2003) (8)
‘Atomistic’ simulation of RTS amplitudes due to single and multiple charged defect states and their interactions (2010) (8)
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: Characterization, modelling and lifetime prediction (2017) (8)
Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations (2016) (8)
Perturbative vs Non-Perturbative impurity scattering in a narrow Si Nanowire GAA transistor: A NEGF study (2009) (8)
Simulation of 3D FinFET doping profiles by ion implantation (2012) (8)
Scaling of pHEMTs to decanano dimensions (2000) (8)
Nonequilibrium transport in scaled high electron mobility transistors (2002) (8)
Correlation between gate length, geometry and electrostatic driven performance in ultra-scaled silicon nanowire transistors (2015) (8)
Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits (2015) (8)
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit (2017) (8)
A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach (2007) (8)
Statistical aspects of NBTI/PBTI and impact on SRAM yield (2011) (8)
Statistical Study of Bias Temperature Instabilities by Means of 3D 'Atomistic' Simulation (2014) (8)
Scalable Parallel 3D Finite Element Nonlinear Poisson Solver (1996) (8)
Statistical TCAD based PDK development for a FinFET technology at 14nm technology node (2012) (8)
Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F (1993) (8)
Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs (2018) (8)
Ab-initio Coulomb Scattering in Atomistic Device Simulation (1998) (7)
A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs (2015) (7)
Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs (2004) (7)
New reliability mechanisms in memory design for sub-22nm technologies (2011) (7)
Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues (2014) (7)
An accurate compact modelling approach for statistical ageing and reliability (2013) (7)
Impact of Scattering on Random Dopant Induced Current Fluctuations in Decanano MOSFETs (2004) (7)
An electron emission model for use with 3D electromagnetic finite element simulation (2001) (7)
Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETs (1991) (7)
Quantum mechanical and transport aspects of resolving discrete charges in nano-CMOS device simulation (2004) (7)
Developing a full 3D NEGF simulator with random dopant and interface roughness (2007) (7)
Simulation of Nano-CMOS Devices: From Atoms to Architecture (2007) (7)
Impact Of Intrinsic Parameter Fluctuations On Deca-nanometer Circuits, And Circuit Modelling Techniques (2006) (7)
Random Dopant Threshold Voltage Fluctuations in 50 nm Epitaxial Channel MOSFETs: A 3D 'Atomistic' Simulation Study (1998) (7)
Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks (2004) (7)
Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs (2015) (7)
Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems (2007) (7)
Design of DG-MOSFETs for high linearity performance (2003) (7)
Circuit design perspectives for Ge FinFET at 10nm and beyond (2015) (7)
Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance (2014) (7)
Modeling and Simulation of Statistical Variability in Nanometer CMOS Technologies (2011) (7)
Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation (2020) (7)
Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential (2001) (7)
Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high- gate stack materials (2005) (7)
Experimental evidences and simulations of trap generation along a percolation path (2015) (7)
Photoluminescence in GaAs/AlGaAs heterojunction bipolar transistors: Dependence of signal strength on excitation density (1991) (7)
Atomistic effect of delta doping layer in a 50 nm InP HEMT (2006) (6)
Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors (2018) (6)
On the nature and energy distribution of defect states caused by hot electrons in Si (1987) (6)
Meeting the design challenges of nano-CMOS electronics: an introduction to an upcoming EPSRC pilot project (2006) (6)
Integrating Security Solutions to Support nanoCMOS Electronics Research (2008) (6)
Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs (2008) (6)
Green function study of quantum transport in ultra-small devices with embedded atomistic clusters (2006) (6)
Intrinsic fluctuations induced by a high‐κ gate dielectric in sub‐100 nm Si MOSFETs (2005) (6)
Simulation of hole-mobility in doped relaxed and strained Ge layers (2010) (6)
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability (2013) (6)
Advanced Monte Carlo Techniques in the Simulation of CMOS Devices and Circuits (2010) (6)
Statistical 3D 'atomistic' simulation of decanano MOSFETs (2000) (6)
The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM (2011) (6)
Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study (2004) (6)
Numerical carrier heating when implementing P3M to study small volume variations (2004) (6)
Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping (2002) (6)
An advanced statistical compact model strategy for SRAM simulation at reduced VDD (2012) (6)
Monte Carlo simulation study of hole mobility in germanium MOS inversion layers (2010) (6)
Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use- ${V}_{dd}$ (2019) (6)
Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials (2005) (6)
3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices (2012) (6)
The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations (2017) (6)
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability (2014) (6)
RTN distribution comparison for bulk, FDSOI and FinFETs devices (2014) (6)
Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study (2010) (6)
The impact of random dopant effects on SRAM cells (2004) (6)
The Use of Quantum Potentials for Confinement in Semiconductor Devices (2002) (6)
Atomistic- to Circuit-Level Modeling of Doped SWCNT for On-Chip Interconnects (2018) (6)
Comparison Between Bulk and FDSOI POM Flash Cell: A Multiscale Simulation Study (2015) (5)
Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach (2019) (5)
3D electro-thermal simulations of bulk FinFETs with statistical variations (2015) (5)
Implications of Imperfect Interfaces and Edges in Ultra‐small MOSFET Characteristics (2002) (5)
Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects (2018) (5)
Quantum Corrections to the 'Atomistic' MOSFET Simulations (2001) (5)
From atoms to product reliability: toward a generalized multiscale simulation approach (2013) (5)
Impact of the Effective Mass on the Mobility in Si Nanowire Transistors (2018) (5)
A NEGF study of the effect of surface roughness on CMOS nanotransistors (2006) (5)
Quantum insights in gate oxide charge-trapping dynamics in nanoscale MOSFETs (2013) (5)
Surface Roughness Scattering in NEGF using self-energy formulation (2019) (5)
Monte carlo study of mobility in Si devices with HfO2-based oxides (2006) (5)
Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs (2017) (5)
Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study (2009) (5)
Circuit-level modeling of FinFet sub-threshold slope and DIBL mismatch beyond 22nm (2013) (5)
Enabling cutting-edge semiconductor simulation through grid technology. (2009) (5)
Gate tunnelling and impact ionisation in sub 100 nm PHEMTs (2002) (5)
A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs (2010) (5)
Brownian Ionic Channel Simulation (2003) (5)
Impact of body thickness fluctuations in nanometer scale UTB SOI MOSFETs on SRAM cell functionality (2005) (5)
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment (2020) (5)
Monte Carlo Simulation of Implant Free InGaAs MOSFET (2006) (5)
Investigation into effects of device variability on CMOS layout motifs (2008) (5)
Optimization of layer structure for InGaAs channel pseudomorphic HEMTs (1999) (5)
3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity (2014) (5)
Simulating the bio–nanoelectronic interface (2007) (5)
The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study (2018) (5)
Development of a Full 3D NEGF Nano-CMOS Simulator (2006) (5)
Inelastic transport through a disordered barrier. The effect of the Coulomb blockade (1992) (5)
Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices (1998) (5)
Variability-aware TCAD based design-technology co-optimization platform for 7nm node nanowire and beyond (2016) (5)
SiGe p-channel MOSFETs with tungsten gate (1999) (5)
One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors (2016) (5)
Influence of quantum confinement effects and device electrostatic driven performance in ultra-scaled SixGe1−x nanowire transistors (2016) (4)
Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs (2002) (4)
Multi-scale electrothermal simulation and modelling of resistive random access memory devices (2016) (4)
Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS) (2020) (4)
Self-consistent physical modeling of SiOx-based RRAM structures (2015) (4)
Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs (2018) (4)
Comments on “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm” (2008) (4)
Performance of vertically stacked horizontal Si nanowires transistors: A 3D Monte Carlo/2D Poisson Schrodinger simulation study (2016) (4)
Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices (2007) (4)
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part I: CNFET Transistor Optimization (2022) (4)
(Invited) Future perspectives of TCAD in the industry (2016) (4)
Convergence properties of density gradient quantum corrections in 3D ensemble Monte Carlo Simulations (2008) (4)
Artificial carrier heating due to the introduction of ab initio Coulomb scattering in Monte Carlo simulations (2003) (4)
High performance MOSFET scaling study from bulk 45 nm technology generation (2008) (4)
Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator (2007) (4)
Monte Carlo analysis of In0.53Ga0.47as Implant-Free Quantum-Well device performance (2010) (4)
Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs (1998) (4)
FDSOI molecular flash cell with reduced variability for low power flash applications (2014) (4)
Simulation for statistical variability in realistic 20nm MOSFET (2014) (4)
TCAD simulations and accurate extraction of reliability-aware statistical compact models (2020) (4)
Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach (2011) (4)
Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs (2014) (4)
An Accurate Analytical Model for Tunnel FET Output Characteristics (2019) (4)
Scaling study of Si/SiGe MODFETs for RF applications (2002) (4)
A methodology for introducing atomistic parameter fluctutations into compact device models for circuit simulation (2003) (4)
Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. (2008) (4)
Parallel Simulation of Semiconductor Devices (1994) (4)
RF analysis of aggressively scaled pHEMTs (2000) (4)
Multiple delta doping in aggressively scaled PHEMTs (2001) (4)
Simulating the bio-nano-CMOS interface (2005) (4)
Efficient 3D 'atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs (1998) (4)
Statistical 3D simulation of line edge roughness in decanano MOSFETs (2001) (4)
Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo (2017) (4)
A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory (2020) (4)
Comparison of advanced transport models for nanoscale nMOSFETs (2009) (4)
Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices (2018) (4)
Increased intrinsic parameter fluctuations through ab initio Monte Carlo simulations in nano-scaled MOSFETs (2006) (4)
Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator (2007) (4)
A Virtual IC Factory in an Undergraduate Semiconductor Device Fabrication Laboratory (1995) (4)
SRAM device and cell co-design considerations in a 14nm SOI FinFET technology (2013) (4)
Variability-aware compact model strategy for 20-nm bulk MOSFETs (2014) (4)
Full-band quantum transport simulation in the presence of hole-phonon interactions using a mode-space k·p approach (2020) (4)
Reliability aware simulation flow: From TCAD calibration to circuit level analysis (2015) (4)
Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications (2003) (4)
The First International Competition in Machine Reconnaissance Blind Chess (2019) (4)
Study of surface roughness in extremely small Si nanowire MOSFETs using fully-3D NEGFs (2009) (4)
Advanced TCAD simulation of local mismatch in 14nm CMOS technology FinFETs (2015) (4)
Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology (2017) (4)
Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework (2021) (4)
Brownian dynamics based particle mesh simulation of ionic solutions and channels (2003) (4)
Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs (2009) (3)
The mystery of the Z2-FET 1T-DRAM memory (2017) (3)
Development of a parallel 3D finite element power semiconductor device simulator (1995) (3)
Mesh-based particle simulation of sub-0.1 micron FETs (1998) (3)
A Predictive 3-D Source/Drain Resistance Compact Model and the Impact on 7 nm and Scaled FinFETs (2020) (3)
Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors. (2008) (3)
Scaling of RF linearity in DG and SOI MOSFETs (2003) (3)
Simulation of impurities with an attractive potential in fully 3-D real-space Non-Equilibrium Green’s Function quantum transport simulations (2008) (3)
Direct source-to-drain tunneling and its impact on intrinsic parameter fluctuations in nanometre scale double gate MOSFETs (2003) (3)
High performance III-V MOSFETs: a dream close to reality? (2002) (3)
Progress in the simulation of time dependent statistical variability in nano CMOS transistors (2014) (3)
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (2010) (3)
Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator (2018) (3)
Simple model for threshold voltage of a nonuniformly doped short-channel MOS transistor (1982) (3)
Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms (2017) (3)
Predictive simulation of future CMOS technologies and their impact on circuits (2014) (3)
A mobility model correction for ‘atomistic’ drift-diffusion simulation (2011) (3)
Microscopic KMC Modeling of Oxide RRAMs (2018) (3)
Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates (2010) (3)
Physical simulation of Si-based resistive random-access memory devices (2015) (3)
Statistical circuit simulation with supply-voltage scaling in nanometre MOSFET devices under the influence of random dopant fluctuations (2008) (3)
Applicability of Quasi-3D and 3D MOSFET Simulations in the ‘Atomistic’ Regime (2003) (3)
Investigation of SRAM using BTI-aware statistical compact models (2013) (3)
Comparative study on RTN amplitude in planar and FinFET devices (2017) (3)
Full-band NEGF simulations of surface roughness in Si nanowires (2010) (3)
Simulation based DC and dynamic behaviour characterization of Z2FET (2017) (3)
Statistical MOSFET current variation due to variation in surface roughness scattering (2011) (3)
ANALYSIS OF AN ONLINE TAEKWONDO COMPETITION (2020) (3)
MOSFETs Under Electrical Stress — Degradation, Subthreshold Conduction, and Noise in a Submicron Structure (1988) (3)
Simulation analysis of process-induced variability in nanoscale SOI and bulk FinFETs (2012) (3)
Parallel Simulation of Semiconductor Devices on MIMD Machines (2007) (3)
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study (2004) (3)
New Assessment Methodology Based on Energy–Delay–Yield Cooptimization for Nanoscale CMOS Technology (2015) (3)
Time-Dependent 3-D Statistical KMC Simulation of Reliability in Nanoscale MOSFETs (2014) (3)
Statistical estimation of electrostatic and transport contributions to device parameter variation (2010) (3)
Simulation study of the 20nm gate-length Ge implant-free quantum well p-MOSFET (2011) (3)
Surface roughness induced device variability: 3D ab initio Monte Carlo simulation study (2008) (3)
Quantum Mechanical Simulations of the Impact of Surface Roughness on Nanowire TFET performance (2019) (3)
A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor (2008) (3)
Does a nanowire transistor follow the golden ratio? A 2D Poisson-Schrödinger/3D Monte Carlo simulation study (2017) (3)
TCAD based Design-Technology Co-Optimisations in advanced technology nodes (2017) (3)
Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants (2007) (3)
Indication of Non-equilibrium Transport in SiGe p-MOSFETs (2000) (3)
Integrating drift diffusion and Brownian simulations for sensory applications (2010) (3)
Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET (2008) (3)
RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation (1999) (3)
Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics (2004) (3)
CALIBRATION OF THE NUMERICAL SIMULATIONS IN THE DESIGN OF HIGH TEMPERATURE IGBTs (1994) (2)
Simulation of statistical variability in nanometer scale CMOS devices (2013) (2)
Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study (2004) (2)
Introducing energy broadening in semiclassical Monte Carlo simulations (2007) (2)
Hierarchical variability-aware compact models of 20nm bulk CMOS (2015) (2)
Impurity potential induced resonances in doped Si nanowire: A NEGF approach (2009) (2)
The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation (2006) (2)
Impact of the statistical variability on 15nm III–V and Ge MOSFET based SRAM design (2013) (2)
An Integral Methodology for Predicting Long-Term RTN (2022) (2)
Ultrafast transistors and ballistic devices (1995) (2)
Multi-scale Computational Framework for Evaluating of the Performance of Molecular Based Flash Cells (2014) (2)
Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETs with Thin Gate Oxides (1999) (2)
Capturing intrinsic parameter fluctuations using the PSP compact model (2010) (2)
New sources of intrinsic parameter fluctuations introduced by a high-k dielectric in sub-100nm Si MOSFETs (2005) (2)
Enabling cutting-edge semiconductor simulation through grid technology (2009) (2)
Impact of Random Dopant Fluctuations on a Tri-Gate MOSFET (2010) (2)
Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor : A Full 3-D NEGF Simulation Study (2)
Current variations in pHEMTs introduced by channel composition fluctuations (2006) (2)
Drain bias impact on statistical variability and reliability in 20 nm bulk CMOS technology (2013) (2)
TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology (2010) (2)
Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs (2017) (2)
Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator (2007) (2)
Influence of quantum confinement effects over device performance in circular and elliptical silicon nanowire transistors (2015) (2)
The In-Plane-Gate Transistor: Device Simulation and Design of the IPG (1992) (2)
e-Infrastructure support for nanoCMOS device and circuit simulations (2010) (2)
TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs (2017) (2)
Impact of strain on LER variability in bulk MOSFETs (2008) (2)
The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology (2011) (2)
From ab initio properties of the Si-SiO2 interface, to electrical characteristics of metal-oxide-semiconductor devices (2010) (2)
An accurate statistical analysis of random dopant induced variability in 140,000 13nm MOSFETs (2008) (2)
Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels (2016) (2)
Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements (2011) (2)
On the Breakdown of Universal Mobility Curves: A Brownian 3D Simulation Framework (2002) (2)
Efficient simulations of 6σ VT distributions due to Random Discrete Dopants (2009) (2)
FET based nano-pore sensing: a 3D simulation study (2012) (2)
Effect of impact ionization in scaled pHEMTs (2000) (2)
Impact of Statistical Variability on FinFET Technology: From Device, Statistical Compact Modelling to Statistical Circuit Simulation (2013) (2)
Simulation study of performance limits for Si, Ge, GaAs ballistic nanowire MOSFETs (2005) (2)
Comparison of the threshold voltage criteria for narrow-channel MOS transistors (1987) (2)
Impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs (2005) (2)
Parallel semiconductor device simulation: from power to 'atomistic' devices (1998) (2)
Atomistic to circuit level modeling of defective doped SWCNTs with contacts for on-chip interconnect application (2017) (2)
Simulation Study of High Performance III-V MOSFETs for Digital Applications (2003) (2)
III-V MOSFETs for future transistor applications (2008) (2)
Statistical circuit simulation with the effect of random discrete dopants in nanometer MOSFET devices (2008) (2)
Continuum vs. particle simulations of model nano-pores (2007) (2)
Vertically stacked lateral Si80Ge20 nanowires transistors for 5 nm CMOS applications (2017) (2)
Numerical analysis of MOS transistor effective channel width (1985) (2)
Vmin Prediction for Negative Capacitance MOSFET based SRAM (2020) (2)
Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks (2004) (2)
RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study (1997) (2)
Parallel 3D Finite Element Power Semiconductor Device Simulator Based on Topologically Rectangular Grid (1995) (2)
Statistical-Variability Compact-Modeling for BSIM4 and PSP (2010) (2)
Breakdown of universal mobility curves in sub-100-nm MOSFETs (2002) (2)
Simulation study on Z2FET scalability, process optimization and their impact on performance (2018) (2)
Statistical NBTI-effect prediction for ULSI circuits (2010) (2)
3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs (1998) (2)
Multiscale Modeling of Charge Trapping in Molecule Based Flash Memories (2019) (2)
IMPACT OF INTRINSIC PARAMETER FLUCTUATIONS IN NANO-CMOS DEVICES ON CIRCUITS AND SYSTEMS (2007) (2)
Scalable Parallel 3D Finite Element Nonlinear Poisson Solver. (1994) (2)
Effect of interface state trap density on the performance of scaled surface channel In 0.3 Ga 0.7 As MOSFETs (2009) (2)
Monte Carlo Analysis of Si/SiGe MODFET Performance Potential (1997) (2)
Applied physics. Where do the dopants go? (2005) (2)
Statistical variations in 32nm thin-body SOI devices and SRAM cells (2008) (2)
Substrate current in short n-channel MOS transistors (1983) (1)
Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor to}Circuit (2018) (1)
A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices (2020) (1)
Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs (2013) (1)
The analysis of static random access memory stability under the influence of statistical variability and bias temperature instability-induced ageing (2020) (1)
Evaluating the accuracy of SRAM margin simulation through large scale Monte-Carlo simulations with accurate compact models (2013) (1)
Interactions between precisely placed dopants and interface roughness in silicon nanowire transistors: Full 3-D NEGF simulation study (2013) (1)
Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology (2014) (1)
On the mobility extraction for HMOSFETs (2001) (1)
RF Performance of Si/SiGe MODFETs: A Simulation Study (1998) (1)
TCAD-based methodology for reliability assessment of nanoscaled MOSFETs (2015) (1)
Analysis of the impact of intrinsic parameter fluctuations in a 50 nm InP HEMT (2007) (1)
3D Drift-Diffusion Simulation with Quantum-Corrections of Tri-Gate MOSFETs (2009) (1)
Statistical Device Simulations of III-V Nanowire Resonant Tunneling Diodes as Physical Unclonable Functions Source (2022) (1)
RTN and Its Intrinsic Interaction with Statistical Variability Sources in Advanced Nano-Scale Devices: A Simulation Study (2020) (1)
Stability and Vmin analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability (2021) (1)
Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study (2014) (1)
Statistical variability in implant-free quantum-well MOSFETswith InGaAs and Ge: a comparative 3D simulation study (2011) (1)
Variability study of high current junctionless silicon nanowire transistors (2017) (1)
Modelling end-of-the-roadmap transistors (2003) (1)
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures (2007) (1)
TCAD Simulation of Novel Semiconductor Devices (2021) (1)
Impact of Effective Mass on Transport Properties and Direct Source-to-Drain Tunneling in Ultrascaled Double Gate Devices: a 2D Multi-Subband Ensemble Monte Carlo study (2019) (1)
The Impact Of Soft‐Optical Phonon Scattering Due To High‐κ Dielectrics On The Performance Of Sub‐100nm Conventional And Strained Si n‐MOSFETs (2005) (1)
Comprehensive Simulation Study of Statistical Variability in 32 nm SOI MOSFET (2010) (1)
Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models (2012) (1)
Impact of random dopant induced statistical variability on inverter switching trajectories and timing variability (2009) (1)
Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs (2015) (1)
Simulation of geometry and surface effects in short gate length MESFETs and HEMTs (1995) (1)
Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study (2018) (1)
Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high k dielectric gate stacks: hot electron and disorder effects (2005) (1)
Discrete doping fluctuations in the delta layer of a 50nm InP HEMT (2005) (1)
3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability (2014) (1)
Tracking the Propagation of Individual Ions Through Ion Channels with Nano-MOSFETs (2004) (1)
Fabrication and Simulation of 0.1 μm Pseudomorphic HEMTs (1995) (1)
Mastering CMOS variability is the key to success (2015) (1)
Impact of point defects in nanowire silicon MOSFETs (2005) (1)
TOPOLOGICALLY RECTANGULAR FINITE ELEMENT GRIDS IN THE PARALLEL SIMULATION OF SEMICONDUCTOR DEVICES (1996) (1)
A 3D finite element parallel simulator for studying fluctuations in advanced MOSFETs (2006) (1)
Meeting the design challenges of nano-CMOS electronics, design automation and test in Europe (2008) (1)
Every atom counts (2004) (1)
Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs (2021) (1)
Simulation of hole-mobility in doped relaxed and strained Ge (2011) (1)
Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator (2021) (1)
Numerical study of the series resistances in deep-submicrometer recess gate MESFETs (1994) (1)
Invited) Modelling and Simulation of Advanced Semiconductor Devices (2017) (1)
Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width (2011) (1)
A framework to study time-dependent variability in circuits at sub-35nm technology nodes (2012) (1)
Compact model strategy for studying the impact of intrinsic parameter fluctuations on circuit performance (2004) (1)
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization (2022) (1)
The Implementation and Speed-up of Coloured SOR Methods for Solving the 3 D Poisson Equation on an Array of Transputers (2007) (1)
Efficient Density Gradient Quantum Corrections for 3D Monte Carlo Simulations (2006) (1)
Evaluating the accuracy of SRAM margin simulation through large scale Monte-Carlo simulations with accurate compact models (2013) (1)
Deep sub-micron and self-aligned flatband III–V MOSFETs (2009) (1)
Monte Carlo simulations of δ-doping placement in sub-100 nm implant free InGaAs MOSFETs (2006) (1)
III-V MOSFETs for Digital Applications with Silicon Co-Integration (2008) (1)
Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides (2019) (1)
Reliability-Aware Statistical BSIM Compact Model Parameter Generation Methodology (2020) (1)
Impact of scattering on the performance of a Si GAA nanowire FETs: From diffusive to ballistic regime (2010) (1)
A unified density gradient approach to ‘ab-initio’ ionised impurity scattering in 3D MC simulations of nano-CMOS variability (2009) (1)
Numerical study of the effect of the doping profile on the threshold voltage of narrow-channel MOS transistor (1987) (1)
Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation (1998) (1)
Statistical Device Variability and its Impact on Yield and Performance (2007) (1)
Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach (2008) (1)
A 3D parallel simulation of the effect of interface charge fluctuations in HEMTs (2006) (1)
The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations (2007) (1)
ICMAT 2011 - Reliability and variability of semiconductor devices and ICs (2012) (1)
Impact of Raised Source/Drain in the In53Ga47As Channel Implant-Free Quantum-Well Transistor (2010) (1)
Fermi-Dirac Statistics in Monte Carlo Simulations of InGaAs MOSFETs (2006) (1)
Comparison of raised source/drain Implant-Free Quantum-Well and Tri-gate MOSFETs using 3D Monte Carlo simulation (2013) (1)
AN EFFICIENT DIFFUSION ALGORITHM FOR 2‐D VLSI PROCESS MODELING CODE (1990) (1)
Monte Carlo Study of Coupled SO Scattering in Si MOSFETs with High κ- Dielectric Gate Stacks: Hot Electron and Disorder Effects (2006) (1)
Tunnelling and Impact Ionization in Scaled Double Doped PHEMTs (2002) (1)
Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations (2015) (1)
Impact of Gate Recess Offset on Pseudomorphic HEMT Performance: A Simulation Study (1996) (1)
An efficient data sampling strategy for statistical parameter extraction of nano-MOSFETs (2008) (1)
Ballistic Transport in Arbitrary Oriented Nanowire MOSFETs (2006) (1)
Indium content fluctuations in the channel of a 120nm PHEMT (2005) (1)
A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices (1998) (1)
A High-Performance Parallel Device Simulator for High Electron Mobility Transistors (2005) (1)
The analysis of SRAM stability under the influence of statistical variability and BTI-induced ageing (2020) (1)
Simulation of Statistical NBTI Degradation in 10nm Doped Channel pFinFETs (2019) (1)
PDK development for 10nm III-V/Ge IFQW CMOS technology including statistical variability (2013) (1)
A 2D-NEGF Quantum Transport Study of Unintentional Charges in a Double Gate Nanotransistor (2006) (1)
Bipolar quantum corrections in resolving individual dopants in atomistic, intrinsic parameter fluctuations into compact model circuit analysis (2003) (1)
Effect of a Discontinuous Ag Layer on Optical and Electrical Properties of ZnO/Ag/ZnOStructures (2022) (1)
Quantum simulation investigation of work-function variation in nanowire tunnel FETs (2020) (1)
Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applications (2020) (1)
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow (2015) (1)
The impact of random dopant aggregation in source and drain in the performance of ballistic DG nano-MOSFETs (2006) (1)
Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study (2003) (1)
On the sub-nm EOT scaling of high-κ gate stacks (2008) (1)
Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs (2019) (1)
Supporting statistical semiconductor device analysis using EGEE and OMII-UK middleware (2008) (1)
Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells (2005) (1)
Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs (2000) (1)
The Extraction of Polyoxometalate Flash Compact Model and Corresponding Circuit Simulation (2021) (1)
Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs (1998) (1)
Data Management of nanometreScale CMOS Device Simulations (2009) (1)
Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage (2013) (1)
Design of a properly scaled 100 nm pseudomorphic HEMT using H2F (1995) (0)
Impact of slew rate definition on the accuracy of nanoCMOS inverter timing simulations (2010) (0)
Electron and Hole Current Switching n-i-p-Type Semiconductor Quantum Dot Transistor (2007) (0)
Simulation and Optimization of Implant-Free Quantum Well Germanium p-MOSFET Design (2010) (0)
Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices (2000) (0)
Impact of Oxide Thickness Fluctuation on MOSFETs Gate Tunnelling (2005) (0)
Impact of stray charges on the characteristics of nano-DGMOSFETs in the ballistic regime: A NEGF simulation study (2005) (0)
Simulation of Bio-Nano-CMOS devices (2006) (0)
Quantum corrections to the 'atomistic' MOSFET simulation (2000) (0)
Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices Including the Thickness Dependent Effective Mass (2020) (0)
Todri-Sanial, A. (2018) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices (2017) (0)
InGaAs implant-free quantum-well MOSFETs: performanceevaluation using 3D Monte Carlo simulation (2012) (0)
Intrinsic parameter fluctuations in UTB MOSFETs induced by body thickness variations (2003) (0)
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor (2008) (0)
Impact of input slew rate on statistical timing and power dissipation variability in nanoCMOS (2010) (0)
Random Dopant Threshold Voltage Fluctuations in 50 nm Epitaxial Channel MOSFETs : A 3 D ' Atomistic ' Simulation (0)
Statisticallyreliable'Atomistic'Simulationof Sub IO0 nm MOSFETs (0)
Monte Carlo modelling of first order quantum effects in deep submicron HEMTs (2002) (0)
Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs (2009) (0)
Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications (2003) (0)
Simulation of Si nanowire quantum-dot devices for authentication (2019) (0)
Modelling of reliability of nanoscale MOSFETs within the discrete charge trapping paradigm (2013) (0)
TCAD based Design-Technology Co-Optimisations in advanced technology nodes (2017) (0)
Si0.64 GE0.36/Si Heterojunction MOSFETs: Design, Fabrication and Evaluation (1999) (0)
Efficient 3D Drift - Diffusion simulations of Implant Free Heterostructure Devices (2009) (0)
III-V MOSFETs for Digital Applications: An Overview (2006) (0)
Monte Carlo investigation of optimal device architectures for SiGe FETs (1998) (0)
TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies (2011) (0)
Investigation of resistance in n-doped Si wires using NEGF formalism (2009) (0)
How can statistics methods help to address variability issues (2011) (0)
Channel length dependence of discrete dopant effects in narrow si nanowire transistors: A full 3D NEGF study (2010) (0)
E-MRS IUMRS ICEM 2006 Symposium B: From strained silicon to nanotubes—Novel channels for field effect devices (2006) (0)
TCAD Based Design Technology Co-Optimisation in Advanced CMOS Technology (2018) (0)
Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs (2019) (0)
Simulation of Atomic Scale Effects and Fluctuations in Nano-Scale CMOS (2006) (0)
Design consideration of 6-T SRAM towards the End Of Bulk CMOS Technology scaling subjected to randon dopant fluctuations (2006) (0)
Hierarchical simulation of nanosheet field effect transistor: NESS flow (2022) (0)
Impact of backplane configuration on the statistical variability in 22nm FDSOI CMOS (2015) (0)
Z2-FET memory for low power applications (2017) (0)
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform (2020) (0)
Perturbative vs Non-Perturbative Impurity Scattering in a Thin Si Gate-All-Around Nanowire transistor : A NEGF study (2009) (0)
Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance (2014) (0)
Special section reliability and variability of devices for circuits and systems (2014) (0)
GaAs MOSFETs - A Viable Single Supply III-V RF Technology Solution ? (2008) (0)
RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks (2004) (0)
B Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd measuring LJMU Research Online (2021) (0)
A simple method to decompose the amplitudes of different random variation sources in FinFET technology (2016) (0)
The impact of high-k dielectrics on the future performance of nano-scale MOSFETs (2004) (0)
Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit (2013) (0)
Silicon-on-insulator (SOI) fin-on-oxide field effect transistors (FinFETs) (2014) (0)
Impact scattering in 'atomistic' device simulation (2004) (0)
3D Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants (2006) (0)
Sub-100nm strained Si CMOS: device performance and circuit behavior (2004) (0)
Intrinsic parameter fluctuations in sub-10nm generation UTB SOI MOSFETs (2006) (0)
FET based nano-pore sensing: a 3D simulation study (2010) (0)
Impact of Statistical Parameter set Selection on Accuracy of Statistical Compact Modelling (2010) (0)
Technical Note on the Mobility Extraction for HMOSFETs (2001) (0)
Modelling on Aging Induced Time Dependent Variability of Z2FET for Memory Applications (2018) (0)
A resource-oriented data management architecture for nanoCMOS electronics (2008) (0)
Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs (1994) (0)
Brownian approach to simulation of ionic solutions and ion permeation through protein channels (2003) (0)
Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study (2022) (0)
TCAD simulations and accurate extraction of reliability-aware statistical compact models (2019) (0)
Simulation of Intrinsic Fluctuations in Decanano MOSFETs: Present Status and Future Challenges (2002) (0)
Statistic 3D simulation of intrinsic fluctuations in nanoscaled PHEMTs (2003) (0)
TCAD proven compact modelling re-centering technology for early 0.x PDKs (2016) (0)
Effect of Impact Ionization in scaled pJ 3 EMTs (2004) (0)
Random dopant related variability in the 30nm gate length In 0.75 Ga 0.25 As impl (2008) (0)
Simulation analysis of the electro-thermal performance of SOI FinFETs (2016) (0)
Impact of point defect location in nanowire silicon MOSFETs (2005) (0)
The Use of Tcad Simulations in Semiconductor Devices Teaching (2020) (0)
Basic of Pseudomorphic Hemts Technology and Numerical Simulation (1996) (0)
Compact model extraction from quantum corrected statistical Monte Carlo simulation of random dopant induced drain current variability (2010) (0)
Advanced simulation of resistance switching in Si-rich silica RRAM devices (2016) (0)
Investigation of performance limiting factors of sub-10nm III-V FinFETs (2015) (0)
Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors (2019) (0)
Optimum partitioning of topologically rectangular grids (1996) (0)
Ballistic transport in decanano MOSFETs : Present status and future challenges (2002) (0)
Carrillo-Nunez, H., Dimitrova, N., Asenov, A. and Georgiev, V. (2019) Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors. IEEE Electron Device (2019) (0)
NEGF for 3D Device Simulation of Nanometric Inhomogenities (2013) (0)
A multi-scale simulation study for optimization and variability evaluation of molecular based flash cell (2018) (0)
Scalable, security-oriented solutions for nanoCMOS electronics (2008) (0)
Evaluation of 35nm MOSFET capacitance components in PSP compact model (2010) (0)
Monte Carlo simulation of sub-30 nm high indium implant free III-V MOSFETs for low power digital applications (2006) (0)
Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics (2008) (0)
Nano CMOS devices and their integration in giga transistor chips (2005) (0)
High-Performance In0.75Ga0.25As Implant-Free n-type MOSFETs for Low Power Applications (2009) (0)
Generic Aspects of Digital Circuit Behaviour In the Presence of Statistical Variability (2010) (0)
Mobility and device performance in conventional and strained Si MOSFETs with high-k stack (2004) (0)
Self-aligned 0.12micron T-gate InGaAs/InAlAs HEMT technology utilizing a non-annealed contact strategy (2003) (0)
Advanced Statistical Strategy for Generation of Non-Normally distributed PSP Compact Model Parameters and Statistical Circuit Simulation (2011) (0)
Mesh Generation for "Atomistic" Simulation of Nanometre Scale MOSFETs (2007) (0)
Device performance in conventional and strained Si n -MOSFETs with high-κ gate stacks (2004) (0)
STATISTICAL VALUES OF DEFECTIVE RESISTANCE FOR SWCNT (2018) (0)
Effect of the channel thickness on the performance of implant-free quantum-well MOSFETs (2010) (0)
An advanced electro-thermal simulation methodology for nanoscale device (2015) (0)
Statistics of the random potential fluctuations in the MOSFET channel (2002) (0)
of Intrinsic Fluctuations in Decanano MOSFETs : Present Status and Future Challenges (0)
Lee, A. and Brown, A. R. and Asenov, A. and Roy, S. (2004) RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate (2005) (0)
Meeting the design challenges of nanoCMOS electronics through secure large-scale simulation and data management (2008) (0)
molecular flash cell with r educed variability for low power flash application s (2014) (0)
Improved compact model extraction of statistical variability in 5 nm nanosheet transistors and applied to SRAM simulations (2022) (0)
The UK HMOS II Silicon Germanium Programme (2002) (0)
Supercomputing at Work in the nanoCMOS Electronics Domain (2008) (0)
Effective masses in arbitrary oriented ballistic nanowire MOSFETS (2005) (0)
Variation-aware energy-delay optimization method for device/circuit co-design (2015) (0)
Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study (2016) (0)
Monte-Carlo investigation of interface roughness scattering in relaxed and strained Si n-MOSFETs (2004) (0)
Full 3 D Statistical Simulation of Line Edge Roughness in sub-100 nm MOSFETs (2001) (0)
Beyond SiO2 technology: The impact of high-k dielectrics (2006) (0)
The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs (2014) (0)
High Performance Enhancement-Mode III-V MOSFETs. (2007) (0)
III-V Enhancement Mode MOSFETs for Digital Applications (2007) (0)
On the design and control of quantum effects in mesoscopic devices (1999) (0)
Analysis of FinFET technology on memories (2012) (0)
Performance analysis of the new implant-free quantum-well CMOS : DualLogic approach (2010) (0)
Sinano Institute vision in the More Moore , More than Moore and Beyond-CMOS domains (2009) (0)
Editorial (2016) (0)
Advanced Simulation of RRAM Memory Cells (2019) (0)
Performance evaluation of p-channel FinFETs using 3D ensemble Monte Carlo simulation (2013) (0)
'Atomistic' Simulation of Decanano Devices (2000) (0)
Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors (2017) (0)
Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects (2018) (0)
MONTE CARLO SIMULATIONS OF In0.75Ga0.25As MOSFETs AT 0.5 V SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS (2009) (0)
Recent Progress in III-V MOSFETs (2007) (0)
Self-Consistent Physical Modeling of SiOx-Based Memristor Structures (2015) (0)
Simulation of a single dopant nanowire transistor (2013) (0)
Accurate and efficient modelling of inelastic hole-acoustic phonon scattering in Monte Carlo simulations (2012) (0)
Statistical device variability and its impact on low power digital circuit design (2008) (0)
Full-band quantum transport simulation in the presence of hole-phonon interactions using a mode-space k·p approach. (2020) (0)
Efficient Hole Trans Ort Model in War Ed Bands for Use in the Simu P Ation of Si/sige 2 Osfets (0)
The impact of the interfacial layer and structure of the k dielectric (HfO2) on device performance (2005) (0)
Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain (2008) (0)
Feasibility Demonstration of New e-NVM Cells Suitable for Integration at 28 nm (0)
Transnational Teaching of Semiconductor Devices using Advanced TCAD Software (2020) (0)
Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS (2014) (0)
IWCE-7 Committees (2001) (0)
KMC-based POM flash cell optimization and time-dependent performance investigation (2021) (0)
Finite Element Simulation of Recess Gate MESFETs and HEMTs : The Simulator H 2 F (2007) (0)
RTS noise simulations of decanano MOSFETs subject to atomic scale structure variations (2003) (0)
Monte Carlo Simulations of Ge Implant Free Quantum Well FETs - The Role of Substrate and Channel Orientation (2012) (0)
Transport in the presence of high-k dielectrics (2005) (0)
A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure (1992) (0)
Dynamic Simulation of Write ‘1’ Operation in the Bi-stable 1-Transistor SRAM Cell (2020) (0)
High Performance Enhancement Mode III-V MOSFETs for Silicon Co-Integration (2007) (0)
Simulation of scaled sub-100nm strained Si p-channel MOSFETs (2003) (0)
‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices (2007) (0)
Electrostatic and transport variations in nano CMOS devices due to variations in high-k oxides (2005) (0)
Drain current computation in nanoscale nMOSFETs: Comparison of transport models (2010) (0)
Variability Headaches in Sub-32 nm CMOS (2009) (0)
Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator (2019) (0)
Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs (1998) (0)
MC simulation of delta doping placement in sub 100nm implant free InGaAs MOSFETs (2006) (0)
Molecular based flash cell for low power flash application: Optimization and variability evaluation (2017) (0)
Continuum versus Particle Simulation of Model Nano-Pores (2012) (0)
Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors (2017) (0)
Investigation on the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs: Scaling limit of “Hole in the inversion layer” model (2016) (0)
Breakdown mechanisms limiting the operation of double doped PHEMTs scaled into sub-100 nm dimensions (2002) (0)
Mobility Variations in Ultra Small Devices due to Random Discrete Dopants (2003) (0)
Atomistic Simulation of Decanano MOSFETs (2004) (0)
80nm InGaAs MOSFET compared to equivalent Si transistor (2004) (0)
MC simulation of high performance InGaAs nano-MOSFETs for low power CMOS applications (2006) (0)
Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell (2021) (0)
Mobility variations in ultra-small devices due to discrete device simulation (2003) (0)
Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors (2017) (0)
Monte Carlo simulation of nanotransistors and giga circuits on HPC (2005) (0)
Performance degradation due to soft optical phonon scattering in conventional and strained Si MOSFETs with high-k gate dielectrics (2004) (0)
Nanowire FETs (2018) (0)
Small volume mobility variations due to ionised impurity scattering (2003) (0)
III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs (2008) (0)
'ab initio' surface roughness scattering in 3D Monte Carlo transport simulations (2010) (0)
to be determined (2013) (0)
Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches (2000) (0)
Invited) Process Variability for Devices at and Beyond the 7 nm Node (2018) (0)
Discrete Dopant Impact on the 7 nm Nanowire Transistor Performance (2015) (0)
Random dopant fluctuation resistant ‘ bulk ’ MOSFETs with epitaxial delta doped channels (2009) (0)
Intrinsic parameter fluctuations due to random grain orientation in the high-k stacks (2006) (0)
Multi-level simulations to support nanoCMOS electronics research (2009) (0)
From atoms to product reliability: toward a generalized multiscale simulation approach (2013) (0)
Mixing Sources of Intrinsic Parameter Fluctuations in the Simulation of Sub-100 nm MOSFETs (2002) (0)
Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability (2014) (0)
Semiconductor Device Visualization using TCAD Software: Case Study for Biomedical Applications (2019) (0)

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