David Adler
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Most Influential Person Across History
Physicist, MIT professor
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Physics
David Adler 's Degrees
- PhD Physics Stanford University
Why Is David Adler Influential?
(Suggest an Edit or Addition)According to Wikipedia, David Adler was an American physicist and Massachusetts Institute of Technology professor. In condensed matter physics, Adler made significant contributions to the understanding of transition-metal oxides, the electronic properties of low-mobility materials, transport phenomena in amorphous materials, metal-insulator transitions, and electronic defects in amorphous semiconductors.
David Adler 's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors (1976) (1041)
- Electrical and Optical Properties of Narrow-Band Materials (1970) (695)
- The mechanism of threshold switching in amorphous alloys (1978) (350)
- Threshold Switching in Chalcogenide-Glass Thin Films (1980) (342)
- Physics of Disordered Materials (1985) (340)
- Tetrahedrally-bonded amorphous semiconductors (1985) (322)
- Mechanisms for Metal-Nonmental Transitions in Transition-Metal Oxides and Sulfides (1968) (313)
- Insulating and Metallic States in Transition Metal Oxides (1968) (188)
- THEORY OF SEMICONDUCTOR-TO-METAL TRANSITIONS (1967) (169)
- Electronic structure of amorphous semiconductors (1976) (161)
- Local structure, bonding, and electronic properties of covalent amorphous semiconductors (1978) (155)
- Electrical conductivity in disordered systems (1973) (124)
- Electrical and optical properties of FeO (1975) (124)
- Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors (1978) (119)
- Origin of the photo-induced changes in hydrogenated amorphous silicon (1983) (116)
- Physical properties of amorphous materials (1985) (113)
- On state of amorphous threshold switches (1976) (102)
- Amorphous-Semiconductor Devices (1977) (96)
- Localization and metal-insulator transitions (1985) (92)
- Quantum Mechanics For Applied Physics And Engineering (1981) (85)
- Semiconductor-To-Metal Transitions in Transition-Metal Compounds (1967) (85)
- Electrical and Optical Properties of NiS2 (1972) (69)
- Band Structure and Electrical Conductivity of NiO (1968) (63)
- DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON (1981) (63)
- Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silane (1983) (58)
- Switching Phenomena in Thin Films (1973) (53)
- Equilibrium transport in amorphous semiconductors (1985) (52)
- Electrothermal switching in amorphous semiconductors (1972) (50)
- Electrical Conductivity in Narrow Energy Bands (1970) (47)
- Localized electronic states in amorphous semiconductors (1977) (45)
- Thermal Effects in Amorphous‐Semiconductor Switching (1971) (45)
- The use of linear predictive modeling for the analysis of transients from experiments on semiconductor defects (1984) (44)
- Materials issues in amorphous semiconductor technology (1986) (43)
- Properties of Crystalline and Amorphous Silicon Telluride (1973) (41)
- Electrical properties of NiS 2-x Se x (1980) (40)
- Operation of ITO/Si heterojunction solar cells (1976) (34)
- Amorphous silicon semiconductors-pure and hydrogenated (1987) (33)
- Laser‐induced chemical vapor deposition of hydrogenated amorphous silicon. I. Gas‐phase process model (1987) (32)
- Theoretical models for the electronic structures of hydrogenated amorphous silicon. II. Three-center bonds (1982) (30)
- Study of the electronic structure of amorphous silicon using reverse-recovery techniques (1982) (29)
- Materials issues in applications of amorphous silicon technology : symposium held April 15-17, 1985, San Francisco, California, U.S.A. (1985) (28)
- Time-of-flight and photoconductivity studies of a-As2Se3 films (1983) (28)
- Amorphous Memories and Bistable Switches (1972) (27)
- Semiconductor-to-Metal Transition in V 2 O 3 (1964) (26)
- Electronic correlations and transient effects in disordered systems (1982) (26)
- Temperature-dependent tunnelling into amorphous silicon (1972) (25)
- Transport and the electronic structure of hydrogenated amorphous silicon (1986) (24)
- Laser‐induced chemical vapor deposition of hydrogenated amorphous silicon. II. Film properties (1987) (24)
- Metastable defects in amorphous silicon alloys (1984) (22)
- Field effect in chalcogenide glasses (1981) (22)
- On‐state characteristics of amorphous/crystalline heterojunctions (1974) (22)
- Extended-state mobility in hydrogenated amorphous silicon (1984) (21)
- Antiferromagnetism in Ti 2 O 3 (1966) (21)
- Theory of Amorphous Semiconductors (1980) (21)
- Doped hydrogenated amorphous silicon films by laser‐induced chemical vapor deposition (1986) (20)
- Fundamental problems in the electronic structure of transition-metal oxides (1975) (18)
- Band structure of magnetic semiconductors (1969) (18)
- Electronic correlations in narrow-band solids (1979) (17)
- Transport properties of a memory-type chalcogenide glass☆ (1970) (17)
- Indium—Tin—Oxide—Silicon heterojunction photovoltaic devices (1977) (16)
- Properties of chalcogenide glass‐silicon heterojunctions (1973) (16)
- Field‐dependent conductivity of chalcogenide glasses (1973) (16)
- Defects in amorphous semiconductors (1980) (16)
- Switching in hydrogenated amorphous silicon (1982) (16)
- Fermi energy and electronic specific heat in Mott insulators (1975) (15)
- Electrical and optical properties of transition-metal oxides (1970) (15)
- Chemistry and Physics of Covalent Amorphous Semiconductors (1985) (15)
- Electronic nature of amorphous threshold switching (1975) (15)
- Chapter 14 Defects and Density of Localized States (1984) (14)
- Chemical modification of chalcogenide glasses by lithium (1984) (14)
- Carrier-generation efficiencies in a-Si : F : H-based photovoltaic devices (1980) (14)
- Comment on the heat of crystallization of amorphous germanium (1973) (14)
- Valence electron configuration of Te in amorphous TeGe alloys (1970) (14)
- Recombination mechanisms in amorphous silicon‐based alloys (1980) (13)
- Theory of the structures of non-crystalline solids (1987) (13)
- Transient Effects in Chalcogenide Glasses (1981) (13)
- NMR Study of a Memory‐Type Amorphous Semiconductor (1970) (13)
- Amorphous—Crystalline heterojunction transistors (1976) (13)
- Electron mobility in hydrogenated amorphous silicon under single and double injection (1987) (12)
- Erratum: A model for the on state of amorphous chalcogenide threshold switches (1979) (12)
- Electrical properties of Ni 1- x Co x S 2 (1980) (12)
- Transient photodecay measurements as a probe of the density of localized states in amorphous semiconductors (1985) (12)
- Dispersive transport and electronic structure of amorphous silicon alloys (1981) (12)
- Defects and microvoids in a-Si and a-Si:H (1985) (12)
- Electron‐ and photon‐induced conductivity in chalcogenide glasses (1976) (12)
- Laser‐induced chemical vapor deposition of silicon nitride films: Film and process characterizations (1987) (11)
- Multiple‐trapping dispersive transport at high temperatures (1982) (11)
- Effects of recombination on trap-limited dispersive transport (1981) (11)
- Reply to ‘‘Comment on ‘Threshold switching in chalcogenide‐glass thin films’ ’’ (1984) (11)
- Structural and electrical properties of polycrystalline silicon films deposited by low pressure chemical vapor deposition with and without plasma enhancement (1986) (11)
- Electroluminescence from the on state of a thin‐film chalcogenide glass (1978) (11)
- Photoconductivity and negatively correlated defects (1981) (11)
- Hall-thermopower sign anomaly in chalcogenide glasses (1977) (11)
- The Imperfect Solid—Transport Properties (1975) (10)
- Thermally Induced Negative Resistance in Si‐Doped YIG (1972) (10)
- Comparison of fast transient response between crystal and amorphous silicon pin photodiodes (1983) (10)
- Determination of the field effect in low‐conductivity materials with the charge‐flow transistor (1981) (10)
- A model for the on state of amorphous chalcogenide threshold switches (1979) (10)
- Ir Laser-Induced Deposition of Silicon Thin Films (1982) (9)
- Disordered materials : science and technology selected papers (1982) (9)
- Calculation of the extended-state electron mobility in hydrogenated amorphous silicon (1985) (9)
- Isomerization model for photo-induced effects in a-Si:H (1984) (8)
- Chemistry and Physics of Amorphous Semiconductors. (1980) (8)
- Theory of staging in intercalation compounds (1988) (8)
- Electronic Transport in Hydrogenated Amorphous Silicon (1986) (8)
- Progress in the science and application of amorphous materials (1987) (8)
- The Jahn-Teller effect and icosahedral stability in metallic glasses (1985) (7)
- Effects of thermal-neutron irradiation on amorphous-silicon films☆ (1972) (7)
- Transient electronic response in hydrogenated amorphous silicon (1986) (7)
- A-S:H Films Produced From Laser Heated Gases: Process Characteristics And Film Properties (1984) (7)
- Space charge spectroscopy of the gap states in hydrogenated amorphous silicon counterdoped with boron (1983) (7)
- Electrical and optical properties of single crystals in the FeO–MnO systems (1974) (7)
- Operation of an amorphous‐emitter transistor (1974) (7)
- The performance of a hydrazine engine with an improved catalyst (1975) (6)
- Effective correlation energy of the dangling bond in amorphous silicon (1983) (6)
- Electrical conductivity and thermoelectric power in amorphous semiconductors (1985) (6)
- Validity of the thermalization approximation in amorphous semiconductors (1985) (6)
- Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon (1985) (6)
- Cluster molecular orbital models of melting and the amorphous state (1986) (6)
- Anomalous Electrical Transport Properties of Ni 1-x Co x S 2 (1977) (6)
- Electronic structure of hydrogenated amorphous silicon (1987) (5)
- Model for gas-laser interaction: application to thermally activated laser-induced chemical vapor deposition. (1987) (5)
- Laser-induced chemical vapor deposition of hydrogenated amorphous silicon: Photovoltaic devices and material properties (1987) (5)
- Transport in hydrogenated amorphous silicon (1984) (5)
- Effects of bond bending on the electronic structure of silane (1986) (4)
- Theory of temperature-induced Mott transitions (1979) (4)
- Normal structural bonding and defects in covalent amorphous solids (1982) (4)
- Inadequacy of the Conventional View of Hydrogenated Amorphous Silicon (1986) (4)
- Electrical conduction mechanisms in amorphous GeTe thin films (1981) (4)
- Photovoltaics for commercial solar power applications (1986) (4)
- Fundamental Problems Relating to the Electronic Structure of Amorphous Semiconductors (1985) (3)
- Fabrication and characterization of heterojunctions between chalcogenide glasses and III–V crystals (1980) (3)
- A Model for the Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon (1983) (3)
- Microscopic mobility in hydrogenated amorphous silicon (1987) (3)
- Origin of the holding current in threshold switching devices (1973) (3)
- Chemistry and physics of amorphous semiconductors (1982) (3)
- Sweep-out experiments: A new spectroscopy for the electronic density of states in doped semiconductors (1988) (2)
- Defects in Covalent Amorphous Semiconductors (1981) (2)
- Amorphous semiconductors for microelectronics : January 21-22, 1986, Los Angeles, California (1986) (2)
- Incorporation of boron during thermal chemical vapor deposition of doped hydrogenated amorphous silicon (1987) (2)
- Optics of Solid State Phase Transformations (1971) (2)
- A DLTS study of the effects of boron counterdoping on the gap states in n-type hydrogenated amorphous silicon (1984) (2)
- Valence and conduction band molecular-orbital topologies and the optical and electrical properties of gallium arsenide and silicon (1988) (2)
- Electronic Configuration of the O2− Ion (1970) (2)
- Photovoltaic properties of sputtered silicon films (1976) (2)
- Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method (1988) (2)
- Electronic structure of amorphous arsenic telluride (1984) (2)
- Photovoltaics for Solar-Energy Applications (1983) (2)
- Determination of the Electronic Density of States of N-Type Hydrogenated Amorphous Silicon from Transient Sweep-Out Experiments (1987) (2)
- Optimization Of Reversible Optical Data Storage Disks (1983) (1)
- Materials issues in amorphous-semiconductor technology : symposium held April 15-18, 1986, Palo Alto, California, U.S.A. (1986) (1)
- Theory of sweep-out experiments: a new spectroscopy for the electronic density of states in doped hydrogenated amorphous silicon films (1987) (1)
- Deep-level spectroscopy of reactively sputtered a-Si:H films (1983) (1)
- Theoretical calculation of the effective correlation energy of hydrogenated amorphous silicon dangling bond by the self-consistent-field X-alpha scattered-wave method (1988) (1)
- Laser-heated CVD process for depositing thin films for low-cost solar-cell applications: Final subcontract report, 1 February 1984-28 February 1987 (1985) (1)
- Planar ring structures in hydrogenated amorphous silicon: A new model for the Staebler-Wronski effect (1985) (1)
- A Simplified Analytic Model For Double Injection In Amorphous Silicon Alloys (1987) (1)
- Theoretical Analysis of Sweep-Out Experiments in Doped Hydrogenated Amorphous Silicon Films (1987) (1)
- Summary Abstract: Comparative study of polycrystalline silicon thin films deposited by very low pressure chemical vapor deposition with and without plasma enhancement (1987) (1)
- Transient field-effect and time-of-flight investigation of chalcogenide glasses (1986) (1)
- Amorphous Silicon Solar Cells (1987) (1)
- Physics of amorphous semiconductor devices : 15-16 January 1987, Los Angeles, California (1987) (1)
- ACTIVE AND PASSIVE STUDIES OF AMORPHOUS CHALCOGENIDE IR EMITTERS (1981) (1)
- Dispersive transport in amorphous arsenic telluride (1983) (1)
- Theoretical studies of aromatic silicon-based structures and their application to photostructural changes in hydrogenated amorphous silicon (1985) (1)
- High-speed transient currents in chalcogenide glasses (1981) (1)
- HIGH-SPEED TRANSIENT EFFECTS IN CHALCOGENIDE GLASSES (1981) (0)
- Chalcogenide-glass solar cells. Final technical progress report, 6 April 1979-31 October 1980 (1980) (0)
- Critical Materials Parameters for the Development of Amorphous Silicon Alloys (1985) (0)
- Disordered Materials: Amorphous and Liquid Semiconductors . J. Tauc, Ed. Plenum, New York, 1974. x, 442 pp., illus. $28. (1975) (0)
- PHOTOCONDUCTIVITY AND ELECTRON-BOMBARDMENT-INDUCED CONDUCTIVITY STUDIES OF MULTICOMPONENT CHALCOGENIDE FILMS. (0)
- Existence of a Sharp Anderson Transition in Disordered Two-Dimensional Systems (1985) (0)
- Hot-Electron Injection into GaAs and Related Materials. (1982) (0)
- The analysis of non-oscillating transients using the covariance method with many different orders (1984) (0)
- CHARGE CENTROID DETERMINATION IN FIELD-EFFECT EXPERIMENTS (1981) (0)
- Properties of chalcogenide‐glass/n‐GaAs heterojunctions (1979) (0)
- Amorphous-Semiconductor Junction Effects. (1978) (0)
- Junction photo element and manufacturing method thereof (1982) (0)
- BLIlllNATION OF PB~ lNDuam DEGRADATION IN SBIIICDmUCJ.'OJl DEVICES (1987) (0)
- Experimental Study Of Sweep-Out In Hydrogenated Amorphous Silicon (1987) (0)
- Band Structure and Electrical Properties of Amorphous Semiconductors (1971) (0)
- Chalcogenide-glass solar cells (1980) (0)
- Electronic States in Amorphous Solids, Liquids, and Alloys (1987) (0)
- Photovoltaics for commercial solar power applications; Proceedings of the Meeting, Cambridge, MA, Sept. 18, 19, 1986 (1986) (0)
- Photovoltaics for solar energy applications II : April 5-6, 1983, Arlington, Virginia (1983) (0)
- On the origins of light-induced changes in hydrogenated amorphous silicon (1984) (0)
- Thermal conductivity of Mott insulators (1977) (0)
- Disordered Materials. (Book Reviews: Amorphous and Liquid Semiconductors) (1975) (0)
- NON-OHMIC AND SWITCHING EFFECTS IN AMORPHOUS CHALCOGENIDE FILMS AND CHALCOGENIDE-SILICON HETEROJUNCTIONS. (0)
- Theoretical Issues In Amorphous-Silicon Materials And Device Research (1985) (0)
- Properties of Transition Metals and Alloys (1967) (0)
- Fabrication and operation of an amorphous-emitter transistor (1974) (0)
- Forum and Book Reviews (1985) (0)
- Elimination of Photo-Induced Degradation in Semiconductor Devices (1987) (0)
- Boron incorporation in hydrogenated amorphous silicon films prepared by chemical vapor deposition (1987) (0)
- Laser-heated CVD process for depositing thin films for low-cost solar cell applications. Annual subcontract progress report, 1 February 1984-31 May 1985 (1985) (0)
- Physics of Amorphous-Silicon Alloys (1987) (0)
- Photosensitive amorphous multiple cell-arrangement (1981) (0)
- Structure and Bonding in Noncrystalline Solids Abstracts (1983) (0)
- Insulators: Electrical Conductivity (1991) (0)
- Dispersive transport from negatively correlated defect centers (1983) (0)
- Theoretical calculation of the effective correlation energy of the hydrogenated amorphous germanium dangling bond by the self-consistent-field X-alpha scattered-wave method and comparison of results between a-Si:H and a-Ge:H (1988) (0)
- Density Of States Of Amorphous Semiconductors (1987) (0)
- Preparation and Properties of Hydrogenated Amorphous Silicon Produced by Plasma-Enhanced Chemical Vapor Decomposition of Silane (1987) (0)
- A photosensitive device with superimposed pin layer of an amorphous silicon alloy material (1981) (0)
- Theory of Covalent Amorphous Semiconductors (1987) (0)
- Theoretical investigations of the light-induced effects in hydrogenated amorphous silicon (1987) (0)
- Photovoltaic device has higher current production capacity (1982) (0)
- Chalcogenide-glass solar cells. Quarterly technical report No. 2, January 1, 1980-March 31, 1980 (1980) (0)
- An entirely different approach to the problem of transient analysis (1984) (0)
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