Sorab K. Ghandhi | Academic Influence

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Sorab K. Ghandhi

Engineering

#1538

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#2249

Historical Rank

Electrical Engineering

#479

World Rank

#533

Historical Rank

Applied Physics

#2107

World Rank

#2146

Historical Rank

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Engineering

Sorab K. Ghandhi's Degrees

Masters Electrical Engineering Stanford University
PhD Electrical Engineering Stanford University

Why Is Sorab K. Ghandhi Influential?

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According to Wikipedia, Sorab K. Ghandhi was a professor Emeritus at Rensselaer Polytechnic Institute known for his pioneering work in electrical engineering and microelectronics education, and in the research and development of Organometallic Vapor Phase Epitaxy for compound semiconductors. He was the recipient of the IEEE Education Award "For pioneering contributions to semiconductor and microelectronics education" in 2010.

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Sorab K. Ghandhi's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Semiconductor power devices (1977) (377)
VLSI fabrication principles (1983) (296)
Deposition of GaAs Epitaxial Layers by Organometallic CVD Temperature and Orientation Dependence (1983) (265)
VLSI fabrication principles : sil-icon and gallium arsenide (1994) (211)
Crystallographic tilting of heteroepitaxial layers (1991) (176)
General theory for pinched operation of the junction-gate FET (1969) (158)
Highly oriented zinc oxide films grown by the oxidation of diethylzinc (1980) (92)
Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions (1976) (78)
The theory and practice of microelectronics (1984) (74)
The Preparation and Properties of Tin Oxide Films Formed by Oxidation of Tetramethyltin (1976) (57)
Ultraviolet‐Enhanced Oxidation of Silicon (1971) (52)
Surface recombination velocity and lifetime in InP (1991) (50)
Growth of silica and phosphosilicate films (1973) (50)
Morphology of organometallic CVD grown GaAs epitaxial layers (1983) (49)
Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy (1992) (48)
Ion-cleaning damage in (100) GaAs, and its effect on schottky diodes (1983) (46)
Semiconductor power devices : physics of operation and fabrication technology (1977) (46)
On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase Epitaxy (1987) (45)
Arsenic‐doped p‐CdTe layers grown by organometallic vapor phase epitaxy (1987) (44)
Electrical Properties of Organometallic Chemical Vapor Deposited GaAs Epitaxial Layers Temperature Dependence (1984) (43)
High quality Hg1−xCdxTe epitaxial layers by the organometallic process (1984) (43)
Elastic strains in CdTe‐GaAs heterostructures grown by metalorganic chemical vapor deposition (1987) (42)
The organometallic epitaxy of extrinsic p‐doped HgCdTe (1989) (41)
Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy (1988) (40)
Growth and Properties of Heteroepitaxial GaInAs Alloys on GaAs Substrates Using Trimethylgallium, Triethylindium, and Arsine (1975) (40)
Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition (1987) (36)
A re-examination of boundary layer theory for a horizontal CVD reactor (1984) (36)
Doping of gallium arsenide in a low pressure organometallic CVD system: I. Silane (1986) (34)
Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity (1988) (33)
The Effect of Phosphorus Doping on Tin Oxide Films Made by the Oxidation of Phosphine and Tetramethyltin I . Growth and Etching Properties (1980) (32)
Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxy (1985) (32)
Growth of CdTe on InSb by organometallic vapor phase epitaxy (1984) (31)
Fabrication of GaAs tunnel junctions by a rapid thermal diffusion process (1986) (30)
Lateral diffusion of zinc and tin in gallium arsenide (1974) (30)
The growth of GaAs at reduced pressure in an organometallic CVD system (1984) (28)
An Open‐Tube Method for Diffusion of Zinc into GaAs (1982) (27)
The organometallic heteroepitaxy of CdTe and HgCdTe on GaAs substrates (1986) (26)
The growth of mercury cadmium telluride by organometallic vapor phase epitaxy (1986) (26)
Ion beam damage effects during the low energy cleaning of GaAs (1982) (26)
Diffusion length measurements in Schottky barrier GaAs solar cells (1979) (25)
Heteroepitaxial InAs Grown on GaAs from Triethylindium and Arsine I. Growth Characterization (1974) (25)
Electronic Properties of Silicon Doped with Silver (1970) (24)
Compensation mechanisms in n+-GaAs doped with sulphur (1989) (24)
Vapor‐Phase Etching and Polishing of Gallium Arsenide Using Hydrogen Chloride Gas (1975) (23)
In-situ etching of InP by a low pressure transient HCI process (1985) (22)
Doping of gallium arsenide in a low pressure organometallic CVD system: II. Hydrogen sulfide (1986) (22)
The properties of nickel in silicon (1969) (21)
Vapor‐Phase Etching and Polishing of GaAs Using Arsenic Trichloride (1977) (21)
The Growth and Characterization of HgTe Epitaxial Layers Made by Organometallic Epitaxy (1984) (21)
Hillocks on epitaxial GaAs grown from trimethylgallium and arsine (1974) (21)
The Preparation and Properties of Arsenic‐Doped Tin Oxide Films (1979) (20)
Indium doping of n‐type HgCdTe layers grown by organometallic vapor phase epitaxy (1990) (20)
The growth of tin oxide films at room temperature (1979) (20)
Precisely controlled shallow p+ diffusions in GaAs (1981) (19)
Growth and properties of Hg1−xCdxTe on GaAs substrates by organometallic vapor‐phase epitaxy (1986) (19)
The preparation and properties of thin polycrystalline GaAs solar cells with grain boundary edge passivation (1980) (19)
Growth and Characterization of Ga0.47In0.53As Films on InP Substrates Using Triethylgallium, Triethylindium, and Arsine (1983) (19)
Preparation and Properties of Zinc Oxide Films Grown by the Oxidation of Diethylzinc (1981) (18)
Low‐temperature growth of HgTe and HgCdTe using methylallyltelluride (1989) (18)
X-ray diffraction studies of CdTe grown on InSb (1988) (18)
The epitaxy of germanium on gallium arsenide (1988) (17)
Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells (1987) (17)
Lifetime control by palladium diffusion in silicon (1978) (16)
The energy levels of palladium in silicon (1977) (16)
Grain-boundary edge passivation of GaAs films by selective anodization (1978) (16)
Impact ionization devices (1966) (16)
Photoexcited carrier lifetimes and spatial transport in surface‐free GaAs homostructures (1990) (16)
Solar cells in bulk InP, made by an open tube diffusion process (1987) (15)
The growth and characterization of HgTe and HgCdTe using methylalylltelluride (1990) (15)
The Effect of Phosphorus Doping on Tin Oxide Films Made by the Oxidation of Phosphine and Tetramethyltin II . Electrical Properties (1980) (15)
The Effect of Chloride Etching on GaAs Epitaxy Using TMG and AsH3 (1978) (15)
Highly uniform, large‐area HgCdTe layers on CdTe and CdTeSe substrates (1988) (15)
An experimental and theoretical study of growth in horizontal epitaxial reactors (1988) (15)
Organometallic Vapor Phase Epitaxy: Features, Problems, New Approaches (1988) (14)
Improved photoluminescence of GaAs in ZnSe/GaAs heterojunctions grown by organometallic epitaxy (1988) (14)
Extrinsic p‐type doping of HgCdTe grown by organometallic epitaxy (1988) (14)
Properties of Gallium Arsenide Double‐Injection Devices (1971) (14)
The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process) (1991) (14)
Darlington's compound connection for transistors (1957) (14)
Thin‐film GaAs solar cells with grain‐boundary edge passivation (1979) (13)
Heteroepitaxial InAs Grown on GaAs from Triethylindium and Arsine II . Electrical Properties (1974) (13)
Open tube diffusion of zinc in gallium arsenide (1980) (13)
A Mass Spectrometric Study of the Reaction of Triethylindium with Arsine Gas (1988) (13)
The effect of processing conditions on the GaAs/plasma-grown insulator interface (1986) (13)
OMVPE growth of CdTe on InSb substrates (1986) (12)
Planar Diffusion in Gallium Arsenide from Tin‐Doped Oxides (1979) (12)
Chemical Etching of Germanium (1988) (12)
High quality planar HgCdTe photodiodes fabricated by the organometallic epitaxy (Direct Alloy Growth Process) (1991) (12)
Extrinsic p‐doped HgCdTe grown by direct alloy growth organometallic epitaxy (1991) (12)
Electrochemical Patterning of Tin Oxide Films (1977) (12)
Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process (1982) (12)
The influence of accumulation on the hall-effect in n-type Hg1−xCdxTe (1990) (12)
Composition dependence of energy gap in GaInAs alloys (1975) (11)
Annealing and electrical properties of Hg1−xCdxTe grown by OMVPE (1990) (10)
MOVPE growth and characteristics of CdTe on InSb substrates (1986) (10)
Strain in epitaxial GaAs on CaF2/Si(111) (1990) (10)
Device Quality Polycrystalline Gallium Arsenide on Germanium/Molybdenum Substrates (1979) (10)
Effects of thermal radiation on momentum, heat, and mass transfer in a horizontal chemical vapor deposition reactor (1991) (10)
Evaluation of solar cell material parameters using a non-destructive microwave technique (1989) (10)
PSG masks for diffusions in gallium arsenide (1972) (9)
Impact ionization in cobalt-doped silicon (1965) (9)
Measurement of energy band gap using an electrolyte‐semiconductor junction: Water–gallium indium arsenide alloys (1975) (9)
A novel reactor for large-area epitaxial solar cell materials (1991) (8)
Low temperature epitaxy of HgTe, CdTe, and HgCdTe using flow modulation techniques (1992) (8)
Alkyl exchange effects between triethylindium and trimethylgallium (1989) (8)
Threading Dislocation Densities in Mismatched Heteroepitaxial (001) Semiconductors (1990) (8)
Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy (1986) (8)
Design considerations for the elimination of recirculation in horizontal epitaxial reactors (1991) (7)
Diffused junction p+−n solar cells in bulk GaAs—II: Device characterization and modelling (1984) (7)
Surface recombination velocity and lifetime in InP measured by transient microwave reflectance (1990) (7)
Growth and characterization of CdTe, HgTe and HgCdTe by atomic layer epitaxy (1993) (6)
Radiative recombination in surface‐free n+/n−/n+GaAs homostructures (1990) (6)
Radiative Recombination and Carrier Lifetimes in Surface-Free GaAs Homostructures (1989) (6)
Interface recombination velocity and lifetime in GaAs and AlGaAs/GaAs structures (1990) (6)
The composition dependence of GaInAs grown by organometallic epitaxy (1989) (6)
The Effect of Wall Heating in Horizontal Organometallic Vapor Phase Epitaxial Reactors (1991) (6)
Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap (1985) (6)
Shallow n+ diffusion into InP by an open‐tube diffusion technique (1987) (5)
Diffused junction p+−n solar cells in bulk GaAs—I: Fabrication and cell performance (1984) (5)
Modeling of a GaAs-Ge monolithic tandem solar cell (1986) (4)
Growth and properties of Hg1-xCdxTe on GaAs, with x − 0.27 (1988) (4)
Selective annealing for the planar processing of HgCdTe devices (1991) (4)
Photoelectronic Circuit Applications (1959) (4)
Electrical characterization of plasma-grown oxides on gallium arsenide (1985) (4)
Deep level transient spectroscopy studies of n-CdTe and p-CdTe (1988) (4)
Evaluation of n-GaAs polycrystalline layers for solar cells using an electrochemical technique (1980) (3)
Electrical and optical properties of tin oxide-gallium arsenide heterojunctions (1976) (3)
Bias considerations in transistor circuit design (1957) (3)
Interface reactions and grain growth processes in poly-GaAs deposited on molybdenum substrates by the organometallic process (1983) (3)
Fabrication of p+-n junction GaAs solar cells by a novel method (1984) (3)
Interface effects with Ga0.47In0.53As layers on InP substrates prepared by organometallic chemical vapor deposition (1983) (3)
Recent Progress in The Omvpe Growth of HgCdTe (1989) (3)
Thermal stabilization of thin‐film GaAs solar cells with grain‐boundary–edge passivation (1981) (3)
The behavior of junction-gate field-effect transistors beyond pinchoff (1968) (3)
Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE (1990) (2)
Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells (1982) (2)
The reactions of triethylindium and trimethylgallium with arsine gas (1988) (2)
Interface recombination velocity and diffusion constant in HI-LO and P/sup +//N GaAs junctions measured by a microwave technique (1988) (2)
OBSERVATIONS OF CURRENT FILAMENTS IN CHROMIUM‐DOPED GaAs (1970) (2)
CdTe-InSb heterostructures grown by organometallic-vapor-phase epitaxy: Preparation and electrical properties (1986) (2)
Characteristics Of OMVPE-Grown CdTe And HgCdTe On GaAs (1987) (2)
The Use of S 2Cl2 for Doping Poly ‐ GaAs Films Grown by the Organometallic Process (1982) (2)
Characterization and modelling of open tube diffused n+p bulk InP solar cells (1987) (2)
Lateral diffusion in GaAs (1973) (2)
Material characterization of GaAs grown in a novel OMVPE reactor (1992) (2)
Sulphur diffusion into InP by an open tube process (1988) (2)
Solar cells in bulk InP using an open tube diffusion process (1987) (2)
Radiation effects in transit-time microwave diodes (1974) (2)
N‐channel enhancement mode field‐effect transistors in Hg1−xCdxTe grown by organometallic epitaxy (direct alloy growth process) (1991) (2)
Operation of Trapatt Oscillators under Transient Ionizing Radiation Conditions (1973) (2)
Pulse Noise Immunity in Saturated Logic Gates (1967) (2)
Aspects of “High Minority-Carrier Lifetime” GaAs on Si Using A Novel SiGe/Ge Buffer (1991) (1)
The Performance of Injection Locked Impatt Oscillators under Transient Ionizing Radiation (1973) (1)
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE PART 1, GROWTH CHARACTERIZATION PART 2, ELECTRICAL PROPERTIES (1975) (1)
Proceedings of the IEEE: Special Issue on Materials and Material Problems in Integrated Electronics (1968) (1)
A study of indium depletion in the OMVPE growth of GaInAs (1990) (1)
Interface Recombination Velocities in Layered GaAs and AlGaAs/GaAs Structures Grown by OMVPE (1987) (1)
Photovoltaic characteristics of n/sup +/pp/sup +/ InP solar cells grown by OMVPE (1990) (1)
Pinched-mode operation of field-effect transistors (1969) (1)
Band gap narrowing in heavily doped N/sup +/ indium phosphide (1991) (1)
Characteristics of ZnSe Layers Grown on Zn-Stabilized and Se-Stabilized GaAs Substrates (1992) (1)
Photoelectric circuit applications (1958) (1)
Fabrication and characteristics of tin-doped n-layers into gallium arsenide by an open-tube diffusion process (1987) (1)
Grain boundary edge passivated solar cells on thin film GaAs (1980) (1)
CdTe Films Grown on InSb Substrates by Organometallic Epitaxy (1986) (1)
THERMALLY INDUCED OSCILLATIONS AND NEGATIVE RESISTANCE IN GaAs DOUBLE‐INJECTION DEVICES (1970) (1)
Performance and characteristics of an OMVPE reactor for solar cell materials (2008) (0)
Polycrystalline thin film gallium arsenide solar cells (1978) (0)
THE GROWTH AND CHARACTERIZATION OF MERCURY(II) TELLURIDE EPITAXIAL LAYERS MADE BY ORGANOMETALLIC EPITAXY (1984) (0)
PLANAR DIFFUSION IN GALLIUM ARSENIDE FROM TIN-DOPED OXIDES (1979) (0)
Research on single-crystal CdTe solar cells: Final subcontract report, 1 February 1985-1 February 1987 (1987) (0)
Behavior of injection locked IMPATT and free running TRAPATT oscillators under transient ionizing radiation. Final scientific report, 1 December 1971--30 June 1973 (1973) (0)
EL-2 Defect Formation and Carbon Incorporation in GaAs grown by Organometallic Vapor Phase Epitaxy (1989) (0)
THE EFFECT OF CHLORIDE ETCHING ON GALLIUM ARSENIDE EPITAXY USING TMG AND ARSINE (1978) (0)
Research on tandem solar cells. Volume 1. Final report. Volume 2. Appendices. Report for 15 May 1984-1 August 1985 (1986) (0)
Anomalous diffusion from doped oxides due to dopant depletion effects (1977) (0)
The Effect of Surface Layers in Epitaxial N-Type Hg 1−x Cd x Te (1989) (0)
Research on semiconductors for high-efficiency solar cells: Annual subcontract report, 1 September 1985-31 August 1986 (1987) (0)
Maya-7: A Diagnostic Program for the Calendar Round (1984) (0)
Comparative performance of diffused junction indium phosphide solar cells (1987) (0)
Effects of Growth Conditions on EL-2 Concentration in OMVPE- GaAs (1987) (0)
Research on Mercury Cadmium Telluride (1986) (0)
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING ARSENIC TRICHLORIDE (1977) (0)
Study in optimization of microcircuit design Final report (1966) (0)
Encapsulated diffusion of sulphur into InP (1989) (0)
THEORY OF OPERATION OF FIELD-EFFECT TRANSISTORS BEYOND PINCH-OFF. (1967) (0)
Integrated circuits—Design principles and fabrication: by the Engineering Staff, Motorola Inc. McGraw-Hill, New York, 1965, 3714 pp. and index, $12.50 (1965) (0)
The Organometallic Epitaxy of HgCdTe by the Direct Alloy Growth (DAG) Process (1992) (0)
Interface-free GaAs structures—from bulk to the quantum limit (2020) (0)
Gas Phase Interactions between Triethylindium and Trimethylgallium (1988) (0)
THE USE OF SULFUR CHLORIDE (S2CL2) FOR DOPING POLY-GALLIUM ARSENIDE FILMS GROWN BY THE ORGANOMETALLIC PROCESS (1983) (0)
Research on single-crystal CdTe solar cells (1986) (0)
The Organometallic Epitaxy of Hgcdte for Infrared Detector Applications (1987) (0)
Voltage and Power Relations in the Space Charge Limited Parallel Plane Diode (1951) (0)
Low temperature growth and electrical characterization of insulators for GaAs MISFETS (1981) (0)
Polycrystalline thin film gallium arsenide solar cells. Final report (1978) (0)
Annealing characteristics of Hg1-xCdxTe grown by organometallic vapor phase epitaxy (1990) (0)
Heavily-Doped n + -GaAs with Low Compensation Grown by Atmospheric OMVPE (1988) (0)
GROWTH AND CHARACTERIZATION OF Hg 1−x Cd x Te ON CdTe SUBSTRATES, PREPARED BY ORGANOMETALLIC EPITAXY (1985) (0)
New ideas for photovoltaic conversion. Subcontract annual report (1985) (0)
The use of PSG films as diffusion masks for gallium arsenide (1971) (0)
ELECTRICAL PROPERTIES OF ORGANOMETALLIC CHEMICAL VAPOR DEPOSITED GALLIUM ARSENIDE EPITAXIAL LAYERS. TEMPERATURE DEPENDENCE (1985) (0)
Diffused P+-N solar cells in bulk GaAs (1982) (0)
Design and Characteristics of a Novel Close-Spaced Reactor for Organometallic Epitaxy (1990) (0)
Characteristics of Sulfur in OMVPE Grown Indium Phosphide (1990) (0)
Hydrogen radical enhanced growth of solar cells (1989) (0)
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING HYDROGEN CHLORIDE GAS (1976) (0)
Growth and Properties of Hgl _ xCdxTe on with x = 0 . 27 GaAs (0)
GROWTH AND CHARACTERIZATION OF GALLIUM INDIUM ARSENIDE (GA0.47IN0.53AS) FILMS ON INDIUM PHOSPHIDE SUBSTRATES USING TRIETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE (1983) (0)
Chemical vapor deposition of tin oxide films (1975) (0)
in the PL spectra is shown (2017) (0)
Strain in Epitaxial GaAs on CaF 2 /Si(111) (1989) (0)
Organometallic Vapor Phase Epitaxial Growth Of HgTe And HgCdTe Using Methylallyltelluride (1989) (0)
Interface Effects with Ga 0.47 In 0.53 As Layers on InP Substrates Prepared by Organometallic Chemical Vapor Deposition (1982) (0)
The Effect of Indium Depletion on the Composition of OMVPE Grown GaInAs (1989) (0)
Research on Microwave Junction Gate Field Effect Transistors. (1979) (0)
Mechanism of Growth of CdTe by Organometallic Vapor-Phase Epitaxy. (1987) (0)

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